KR101613527B1 - 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버 - Google Patents

마이크로 위치결정 시스템을 갖는 급속 열처리 챔버 Download PDF

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KR101613527B1
KR101613527B1 KR1020117013036A KR20117013036A KR101613527B1 KR 101613527 B1 KR101613527 B1 KR 101613527B1 KR 1020117013036 A KR1020117013036 A KR 1020117013036A KR 20117013036 A KR20117013036 A KR 20117013036A KR 101613527 B1 KR101613527 B1 KR 101613527B1
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substrate
substrate support
support
relative
chamber
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KR20110084524A (ko
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쿠르쉬드 소라브지
조셉 엠. 라니쉬
볼프강 아더홀드
아론 엠. 헌터
블라크 알. 코엘멜
알렉산더 엔. 러너
니어 메리
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020117013036A 2008-11-06 2009-11-05 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버 Active KR101613527B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US11200808P 2008-11-06 2008-11-06
US11201508P 2008-11-06 2008-11-06
US61/112,015 2008-11-06
US61/112,008 2008-11-06
US12/611,958 2009-11-04
US12/611,958 US8314371B2 (en) 2008-11-06 2009-11-04 Rapid thermal processing chamber with micro-positioning system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020167005275A Division KR101831360B1 (ko) 2008-11-06 2009-11-05 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버

Publications (2)

Publication Number Publication Date
KR20110084524A KR20110084524A (ko) 2011-07-25
KR101613527B1 true KR101613527B1 (ko) 2016-04-19

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020117013036A Active KR101613527B1 (ko) 2008-11-06 2009-11-05 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버
KR1020167005275A Active KR101831360B1 (ko) 2008-11-06 2009-11-05 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버
KR1020187004614A Active KR101958823B1 (ko) 2008-11-06 2009-11-05 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버

Family Applications After (2)

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KR1020167005275A Active KR101831360B1 (ko) 2008-11-06 2009-11-05 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버
KR1020187004614A Active KR101958823B1 (ko) 2008-11-06 2009-11-05 마이크로 위치결정 시스템을 갖는 급속 열처리 챔버

Country Status (6)

Country Link
US (4) US8314371B2 (https=)
JP (1) JP6079980B2 (https=)
KR (3) KR101613527B1 (https=)
CN (1) CN102210017B (https=)
DE (1) DE112009002691T5 (https=)
WO (1) WO2010054076A2 (https=)

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US20130043632A1 (en) 2013-02-21
US20150050118A1 (en) 2015-02-19
KR101831360B1 (ko) 2018-02-22
CN102210017A (zh) 2011-10-05
US9390950B2 (en) 2016-07-12
US9564349B2 (en) 2017-02-07
US8900889B2 (en) 2014-12-02
KR20180021220A (ko) 2018-02-28
WO2010054076A2 (en) 2010-05-14
US20100133257A1 (en) 2010-06-03
US8314371B2 (en) 2012-11-20
CN102210017B (zh) 2013-09-11
KR101958823B1 (ko) 2019-03-15
KR20110084524A (ko) 2011-07-25
KR20160030329A (ko) 2016-03-16
US20130043235A1 (en) 2013-02-21
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