CN102208351B - 空气侧墙围栅硅纳米线晶体管的制备方法 - Google Patents
空气侧墙围栅硅纳米线晶体管的制备方法 Download PDFInfo
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CN103165428B (zh) * | 2011-12-14 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | 制作半导体器件的方法 |
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CN1577734A (zh) * | 2003-07-28 | 2005-02-09 | 英特尔公司 | 制造超窄沟道半导体器件的方法 |
US6855606B2 (en) * | 2003-02-20 | 2005-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-rod devices |
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KR100757328B1 (ko) * | 2006-10-04 | 2007-09-11 | 삼성전자주식회사 | 단전자 트랜지스터 및 그 제조 방법 |
US20080128760A1 (en) * | 2006-12-04 | 2008-06-05 | Electronics And Telecommunications Research Institute | Schottky barrier nanowire field effect transistor and method for fabricating the same |
US7994040B2 (en) * | 2007-04-13 | 2011-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication thereof |
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US6855606B2 (en) * | 2003-02-20 | 2005-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor nano-rod devices |
CN1577734A (zh) * | 2003-07-28 | 2005-02-09 | 英特尔公司 | 制造超窄沟道半导体器件的方法 |
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