CN102201363A - 用于闪存器件的浅沟槽隔离结构形成方法 - Google Patents
用于闪存器件的浅沟槽隔离结构形成方法 Download PDFInfo
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102522364A (zh) * | 2011-12-22 | 2012-06-27 | 上海宏力半导体制造有限公司 | 浅沟槽隔离结构及其形成方法 |
CN106783860A (zh) * | 2016-12-21 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | 浅沟槽隔离浮栅结构的制作方法和浮栅型闪存的制作方法 |
CN115763362A (zh) * | 2023-01-04 | 2023-03-07 | 广州粤芯半导体技术有限公司 | 一种浅槽隔离结构制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030199149A1 (en) * | 2002-04-18 | 2003-10-23 | Samsung Electronics Co., Ltd. | Shallow trench isolation method and method for manufacturing non-volatile memory device using the same |
US6890859B1 (en) * | 2001-08-10 | 2005-05-10 | Cypress Semiconductor Corporation | Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby |
CN1725515A (zh) * | 2004-07-21 | 2006-01-25 | 三星电子株式会社 | 具有重叠栅电极的半导体器件及其制造方法 |
CN101150086A (zh) * | 2006-09-21 | 2008-03-26 | 海力士半导体有限公司 | 形成半导体装置的隔离层的方法 |
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- 2011-05-23 CN CN2011101346535A patent/CN102201363A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6890859B1 (en) * | 2001-08-10 | 2005-05-10 | Cypress Semiconductor Corporation | Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby |
US20030199149A1 (en) * | 2002-04-18 | 2003-10-23 | Samsung Electronics Co., Ltd. | Shallow trench isolation method and method for manufacturing non-volatile memory device using the same |
CN1725515A (zh) * | 2004-07-21 | 2006-01-25 | 三星电子株式会社 | 具有重叠栅电极的半导体器件及其制造方法 |
CN101150086A (zh) * | 2006-09-21 | 2008-03-26 | 海力士半导体有限公司 | 形成半导体装置的隔离层的方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102522364A (zh) * | 2011-12-22 | 2012-06-27 | 上海宏力半导体制造有限公司 | 浅沟槽隔离结构及其形成方法 |
CN106783860A (zh) * | 2016-12-21 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | 浅沟槽隔离浮栅结构的制作方法和浮栅型闪存的制作方法 |
CN115763362A (zh) * | 2023-01-04 | 2023-03-07 | 广州粤芯半导体技术有限公司 | 一种浅槽隔离结构制备方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140408 |
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