CN102197426B - 使用能量化离子以图案化磁性薄膜的方法 - Google Patents
使用能量化离子以图案化磁性薄膜的方法 Download PDFInfo
- Publication number
- CN102197426B CN102197426B CN200980142620.6A CN200980142620A CN102197426B CN 102197426 B CN102197426 B CN 102197426B CN 200980142620 A CN200980142620 A CN 200980142620A CN 102197426 B CN102197426 B CN 102197426B
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- Prior art keywords
- magnetic film
- thin magnetic
- substrate
- pattern
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000000059 patterning Methods 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title abstract 7
- 150000002500 ions Chemical class 0.000 claims abstract description 142
- 230000035515 penetration Effects 0.000 claims abstract description 25
- 230000005284 excitation Effects 0.000 claims abstract description 20
- 229910052796 boron Inorganic materials 0.000 claims description 38
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 28
- 239000001307 helium Substances 0.000 claims description 26
- 229910052734 helium Inorganic materials 0.000 claims description 26
- 230000000149 penetrating effect Effects 0.000 claims description 26
- -1 boron ion Chemical class 0.000 claims description 24
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 17
- 230000005415 magnetization Effects 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 1
- 238000011002 quantification Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000006249 magnetic particle Substances 0.000 description 19
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- 238000000137 annealing Methods 0.000 description 12
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- 238000001127 nanoimprint lithography Methods 0.000 description 10
- 229920006395 saturated elastomer Polymers 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 description 7
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- 238000005259 measurement Methods 0.000 description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 description 7
- 230000000704 physical effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910019222 CoCrPt Inorganic materials 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
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- 239000007788 liquid Substances 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
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- 230000008901 benefit Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
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- 229910002555 FeNi Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 238000001509 photo nanoimprint lithography Methods 0.000 description 2
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- 238000012546 transfer Methods 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020708 Co—Pd Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
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- 230000000740 bleeding effect Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
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- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
- G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410246897.6A CN103996404B (zh) | 2008-10-22 | 2009-10-15 | 磁性记录媒体和在基板上图案化薄膜的方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/255,833 US8535766B2 (en) | 2008-10-22 | 2008-10-22 | Patterning of magnetic thin film using energized ions |
| US12/255,865 US8551578B2 (en) | 2008-02-12 | 2008-10-22 | Patterning of magnetic thin film using energized ions and thermal excitation |
| US12/255,865 | 2008-10-22 | ||
| US12/255,833 | 2008-10-22 | ||
| PCT/US2009/060868 WO2010048030A2 (fr) | 2008-10-22 | 2009-10-15 | Traçage de motifs sur une pellicule mince magnétique utilisant des ions excités |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410246897.6A Division CN103996404B (zh) | 2008-10-22 | 2009-10-15 | 磁性记录媒体和在基板上图案化薄膜的方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102197426A CN102197426A (zh) | 2011-09-21 |
| CN102197426B true CN102197426B (zh) | 2014-11-05 |
Family
ID=42119905
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980142620.6A Expired - Fee Related CN102197426B (zh) | 2008-10-22 | 2009-10-15 | 使用能量化离子以图案化磁性薄膜的方法 |
| CN201410246897.6A Expired - Fee Related CN103996404B (zh) | 2008-10-22 | 2009-10-15 | 磁性记录媒体和在基板上图案化薄膜的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410246897.6A Expired - Fee Related CN103996404B (zh) | 2008-10-22 | 2009-10-15 | 磁性记录媒体和在基板上图案化薄膜的方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5640011B2 (fr) |
| KR (1) | KR101622568B1 (fr) |
| CN (2) | CN102197426B (fr) |
| TW (1) | TWI478159B (fr) |
| WO (1) | WO2010048030A2 (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5238781B2 (ja) * | 2010-09-17 | 2013-07-17 | 株式会社東芝 | 磁気記録媒体の製造方法 |
| JP5238780B2 (ja) * | 2010-09-17 | 2013-07-17 | 株式会社東芝 | 磁気記録媒体とその製造方法及び磁気記録装置 |
| US8679356B2 (en) | 2011-05-19 | 2014-03-25 | Varian Semiconductor Equipment Associates, Inc. | Mask system and method of patterning magnetic media |
| FR2991096B1 (fr) * | 2012-05-22 | 2014-06-20 | Centre Nat Rech Scient | Procede de fabrication d'un film comprenant des microstructures magnetiques tridimensionnelles |
| US9384773B2 (en) * | 2013-03-15 | 2016-07-05 | HGST Netherlands, B.V. | Annealing treatment for ion-implanted patterned media |
| KR102260263B1 (ko) | 2014-10-14 | 2021-06-02 | 엘지디스플레이 주식회사 | 터치 패널 및 터치 패널 일체형 유기 발광 표시 장치 |
| KR102299875B1 (ko) | 2014-11-07 | 2021-09-07 | 엘지디스플레이 주식회사 | 터치 패널, 이의 제조 방법 및 터치 패널 일체형 유기 발광 표시 장치 |
| KR20170012798A (ko) * | 2015-07-24 | 2017-02-03 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6500497B1 (en) * | 2001-10-01 | 2002-12-31 | Data Storage Institute | Method of magnetically patterning a thin film by mask-controlled local phase transition |
| CN101243544A (zh) * | 2005-08-08 | 2008-08-13 | 应用材料股份有限公司 | 使用低温沉积含碳硬掩膜的半导体基材制程 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0356668A (ja) * | 1989-07-24 | 1991-03-12 | Ricoh Co Ltd | スパッター装置 |
| JPH0636362A (ja) * | 1992-07-14 | 1994-02-10 | Kuraray Co Ltd | 光情報記録媒体の製造方法 |
| GB9216074D0 (en) * | 1992-07-28 | 1992-09-09 | Johnson Matthey Plc | Magneto-optical recording materials system |
| JPH06104172A (ja) * | 1992-09-18 | 1994-04-15 | Fujitsu Ltd | 薄膜パターンの形成方法 |
| TW275123B (fr) * | 1994-01-31 | 1996-05-01 | Tera Store Inc | |
| US5858474A (en) * | 1996-02-20 | 1999-01-12 | Seagate Technology, Inc. | Method of forming a magnetic media |
| US6168845B1 (en) * | 1999-01-19 | 2001-01-02 | International Business Machines Corporation | Patterned magnetic media and method of making the same using selective oxidation |
| JP2000298825A (ja) * | 1999-04-12 | 2000-10-24 | Sony Corp | 磁気記録媒体およびその製造方法 |
| JP4560693B2 (ja) * | 1999-05-27 | 2010-10-13 | ソニー株式会社 | 表面処理装置および表面処理方法 |
| KR20000075388A (ko) * | 1999-05-27 | 2000-12-15 | 이데이 노부유끼 | 표면 처리 장치 및 표면 처리 방법 |
| JP2001043530A (ja) * | 1999-07-28 | 2001-02-16 | Anelva Corp | 情報記録ディスク用保護膜作成方法及び情報記録ディスク用薄膜作成装置 |
| JP2001250217A (ja) * | 2000-03-07 | 2001-09-14 | Hitachi Maxell Ltd | 情報記録媒体及びその製造方法 |
| JP2002288813A (ja) * | 2001-03-26 | 2002-10-04 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
| JP3886802B2 (ja) * | 2001-03-30 | 2007-02-28 | 株式会社東芝 | 磁性体のパターニング方法、磁気記録媒体、磁気ランダムアクセスメモリ |
| US6849349B2 (en) * | 2001-10-22 | 2005-02-01 | Carnegie Mellon University | Magnetic films having magnetic and non-magnetic regions and method of producing such films by ion irradiation |
| US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
| US7611911B2 (en) * | 2003-10-08 | 2009-11-03 | International Business Machines Corporation | Method and system for patterning of magnetic thin films using gaseous transformation to transform a magnetic portion to a non-magnetic portion |
| JP2005158095A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | マスター情報担体の製造方法 |
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| US6500497B1 (en) * | 2001-10-01 | 2002-12-31 | Data Storage Institute | Method of magnetically patterning a thin film by mask-controlled local phase transition |
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Also Published As
| Publication number | Publication date |
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| JP2014209404A (ja) | 2014-11-06 |
| KR20110090943A (ko) | 2011-08-10 |
| CN103996404A (zh) | 2014-08-20 |
| KR101622568B1 (ko) | 2016-05-19 |
| CN103996404B (zh) | 2017-08-04 |
| JP5640011B2 (ja) | 2014-12-10 |
| WO2010048030A2 (fr) | 2010-04-29 |
| TWI478159B (zh) | 2015-03-21 |
| WO2010048030A3 (fr) | 2010-07-22 |
| CN102197426A (zh) | 2011-09-21 |
| TW201029003A (en) | 2010-08-01 |
| WO2010048030A4 (fr) | 2010-09-02 |
| JP2012506601A (ja) | 2012-03-15 |
| JP5863882B2 (ja) | 2016-02-17 |
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