WO2010048030A2 - Traçage de motifs sur une pellicule mince magnétique utilisant des ions excités - Google Patents

Traçage de motifs sur une pellicule mince magnétique utilisant des ions excités Download PDF

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Publication number
WO2010048030A2
WO2010048030A2 PCT/US2009/060868 US2009060868W WO2010048030A2 WO 2010048030 A2 WO2010048030 A2 WO 2010048030A2 US 2009060868 W US2009060868 W US 2009060868W WO 2010048030 A2 WO2010048030 A2 WO 2010048030A2
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
magnetic thin
magnetic
resist
pattern
Prior art date
Application number
PCT/US2009/060868
Other languages
English (en)
Other versions
WO2010048030A3 (fr
WO2010048030A4 (fr
Inventor
Omkaram Nalamasu
Steven Verhaverbeke
Majeed Foad
Mahalingam Venkatesan
Nety M. Krishna
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/255,833 external-priority patent/US8535766B2/en
Priority claimed from US12/255,865 external-priority patent/US8551578B2/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN200980142620.6A priority Critical patent/CN102197426B/zh
Priority to JP2011533240A priority patent/JP5640011B2/ja
Publication of WO2010048030A2 publication Critical patent/WO2010048030A2/fr
Publication of WO2010048030A3 publication Critical patent/WO2010048030A3/fr
Publication of WO2010048030A4 publication Critical patent/WO2010048030A4/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855—Coating only part of a support with a magnetic layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers

Definitions

  • FIG. 8D shows the magnetization curve for the magnetic film not subjected to Boron ion implantation. As it is apparent from Figure 8D, the saturation magnetism (Ms) is about 1.36 tesla.
  • Figure 8E shows the magnetization curve for portions of the magnetic film subjected to Boron ion implantation.
  • Silicon substrate sputtered with about 20 nm of Co alloy layer was prepared as samples for this example.
  • the prepared sample was subjected to a plasma containing Silicon ions, by injecting dopant gas SiH4 into the process chamber.
  • the process chamber pressure was about 30 mtorr
  • the RF bias voltage was about 9 kV
  • the source power was about 500 watts
  • the dopant gas SiH4 was injected at a flow rate of about 75 seem and the implant time was about 20 seconds.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Record Carriers (AREA)
  • Magnetic Heads (AREA)

Abstract

Le procédé selon l’invention de traçage de motifs sur une pellicule mince magnétique sur un substrat consiste : à tracer un motif sur la pellicule mince magnétique, où des zones sélectives du motif permettent la pénétration d’ions excités d’un ou plusieurs éléments. Les ions excités sont générés avec une énergie suffisante pour pénétrer les zones sélectives et une portion de la pellicule mince magnétique adjacente aux zones sélectives. Le substrat est placé pour recevoir les ions excités. La portion de la pellicule mince magnétique peut être soumise à une excitation thermique. Les portions de la pellicule mince magnétique sont modifiées pour présenter une propriété magnétique différente des autres portions sélectives. L’invention concerne aussi un procédé de traçage de motif sur un support magnétique avec une pellicule mince magnétique sur les deux côtés du support.
PCT/US2009/060868 2008-10-22 2009-10-15 Traçage de motifs sur une pellicule mince magnétique utilisant des ions excités WO2010048030A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200980142620.6A CN102197426B (zh) 2008-10-22 2009-10-15 使用能量化离子以图案化磁性薄膜的方法
JP2011533240A JP5640011B2 (ja) 2008-10-22 2009-10-15 高エネルギーイオンを使用する磁気薄膜のパターン化

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/255,833 2008-10-22
US12/255,833 US8535766B2 (en) 2008-10-22 2008-10-22 Patterning of magnetic thin film using energized ions
US12/255,865 2008-10-22
US12/255,865 US8551578B2 (en) 2008-02-12 2008-10-22 Patterning of magnetic thin film using energized ions and thermal excitation

Publications (3)

Publication Number Publication Date
WO2010048030A2 true WO2010048030A2 (fr) 2010-04-29
WO2010048030A3 WO2010048030A3 (fr) 2010-07-22
WO2010048030A4 WO2010048030A4 (fr) 2010-09-02

Family

ID=42119905

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/060868 WO2010048030A2 (fr) 2008-10-22 2009-10-15 Traçage de motifs sur une pellicule mince magnétique utilisant des ions excités

Country Status (5)

Country Link
JP (2) JP5640011B2 (fr)
KR (1) KR101622568B1 (fr)
CN (2) CN102197426B (fr)
TW (1) TWI478159B (fr)
WO (1) WO2010048030A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064289A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 磁気記録媒体とその製造方法及び磁気記録装置
JP2012064288A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 磁気記録媒体とその製造方法及び磁気記録装置
US8679356B2 (en) 2011-05-19 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Mask system and method of patterning magnetic media
US20140272469A1 (en) * 2013-03-15 2014-09-18 HGST Netherlands B.V. Annealing treatment for ion-implanted patterned media

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FR2991096B1 (fr) * 2012-05-22 2014-06-20 Centre Nat Rech Scient Procede de fabrication d'un film comprenant des microstructures magnetiques tridimensionnelles
KR102260263B1 (ko) 2014-10-14 2021-06-02 엘지디스플레이 주식회사 터치 패널 및 터치 패널 일체형 유기 발광 표시 장치
KR102299875B1 (ko) 2014-11-07 2021-09-07 엘지디스플레이 주식회사 터치 패널, 이의 제조 방법 및 터치 패널 일체형 유기 발광 표시 장치
KR20170012798A (ko) * 2015-07-24 2017-02-03 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법

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US20030113524A1 (en) * 2001-10-22 2003-06-19 Klemmer Timothy John Magnetic films having magnetic and non-magnetic regions and method of producing such films by ion irradiation
US20050079647A1 (en) * 2003-10-08 2005-04-14 International Business Machines Corporation Method and system for patterning of magnetic thin films using gaseous transformation
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication

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US6500497B1 (en) * 2001-10-01 2002-12-31 Data Storage Institute Method of magnetically patterning a thin film by mask-controlled local phase transition
US20030113524A1 (en) * 2001-10-22 2003-06-19 Klemmer Timothy John Magnetic films having magnetic and non-magnetic regions and method of producing such films by ion irradiation
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012064289A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 磁気記録媒体とその製造方法及び磁気記録装置
JP2012064288A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 磁気記録媒体とその製造方法及び磁気記録装置
US8679356B2 (en) 2011-05-19 2014-03-25 Varian Semiconductor Equipment Associates, Inc. Mask system and method of patterning magnetic media
US20140272469A1 (en) * 2013-03-15 2014-09-18 HGST Netherlands B.V. Annealing treatment for ion-implanted patterned media
US9384773B2 (en) 2013-03-15 2016-07-05 HGST Netherlands, B.V. Annealing treatment for ion-implanted patterned media

Also Published As

Publication number Publication date
WO2010048030A3 (fr) 2010-07-22
CN103996404A (zh) 2014-08-20
JP2014209404A (ja) 2014-11-06
WO2010048030A4 (fr) 2010-09-02
CN103996404B (zh) 2017-08-04
KR20110090943A (ko) 2011-08-10
CN102197426A (zh) 2011-09-21
JP5640011B2 (ja) 2014-12-10
TWI478159B (zh) 2015-03-21
KR101622568B1 (ko) 2016-05-19
JP5863882B2 (ja) 2016-02-17
JP2012506601A (ja) 2012-03-15
TW201029003A (en) 2010-08-01
CN102197426B (zh) 2014-11-05

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