CN102176660A - Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components - Google Patents
Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components Download PDFInfo
- Publication number
- CN102176660A CN102176660A CN2011100610827A CN201110061082A CN102176660A CN 102176660 A CN102176660 A CN 102176660A CN 2011100610827 A CN2011100610827 A CN 2011100610827A CN 201110061082 A CN201110061082 A CN 201110061082A CN 102176660 A CN102176660 A CN 102176660A
- Authority
- CN
- China
- Prior art keywords
- rail
- pipe
- input
- current
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components, belonging to the field of design of analogue integrated circuits. The broadband rail-to-rail amplifier with low power consumption comprises a rail-to-rail input stage composed of four NMOS (N-channel Metal Oxide Semiconductor) transistors and four PMOS (P-channel Metal Oxide Semiconductor) transistors; the circuit transforms an input voltage signal into a current signal to form a reversed recovery current; a middle stage of an amplified recovery current, composed of four low-voltage current mirrors, can realize the amplification function on the recovery current; and a rail-to-rail output stage composed of two PMOS transistors and two NMOS transistors realizes the rail-to-rail output of the signal. In the invention, the broadband rail-to-rail amplifier has the advantages of increasing the capability of the broadband by more than two times under the condition of not increasing power consumption, increasing low-frequency gain and large signal slew rate, increasing the amplitude of an input/output signal when the amplifier works in a low-voltage environment, and the like. Each MOS transistor can be selected from conventional MOS transistors and also can be selected from strained silicon MOS tubes with high mobility so as to further improve the performance of the circuit.
Description
Technical field:
The invention belongs to the analog integrated circuit design field, particularly a kind of rail-to-rail amplifier of broadband low-power consumption that adopts the CMOS pipe.
Background technology:
Since 20 centurial years generations, increasingly mature along with the development of sub-micron, sub-micro technology and system chip technology adopted battery powered portable type electronic product to obtain fast development and popularizes fast.Because the development of battery technology does not catch up with the development with electronic system far away, from the cardiac pacemaker to the hearing aids, mobile phone and variety of products all proposed strict restriction to the supply power voltage of electronic product.On the other hand, along with device size constantly dwindles, the puncture voltage of technology also reducing, has also proposed strict restriction to supply voltage.The electronic device performance requirement is more and more higher, and the construction cycle is shorter and shorter, and is also strict day by day with the restriction of production cost to exploitation, makes the low pressure analog integrated circuit receive great concern.
Operational amplifier is a most important circuit unit in the analog circuit, is widely used in analog circuit and the mixed signal treatment circuit, and as switching capacity, modulus, digital to analog converter etc.But linearity does not reduce along with reducing of characteristic size owing to transistorized threshold voltage, so under the low supply voltage environment, the dynamic range of the input/output signal of operational amplifier reduces greatly.In order to improve the performance of amplifier, increase the dynamic range of input/output signal, preferably can reach whole supply voltage scope, i.e. rail-to-rail I/O, just must improve design to the differential input stage and the output stage of amplifier, this has just facilitated the generation and the development of rail-to-rail amplifier.
Over past ten years, rail-to-rail operation amplifier is emerge in multitude, and each major company also releases own corresponding product one after another.Its application is very extensive, can be used in the middle of the various circuit such as DVD player, sound card, mobile phone, system, transducer.Compare with traditional amplifier, the rail-to-rail amplifier mainly has following characteristics: (1) common-mode input voltage range is near the positive and negative two-stage of power supply.(2) mutual conductance of input stage is basic in common-mode input voltage range keeps constant.(3) output voltage can reach the positive and negative two-stage of supply voltage.
The circuit structure of traditional rail-to-rail amplifier as shown in Figure 1.Input stage is made up of two NMOS pipe N1, N2 and two PMOS pipes P1, P2, and its electric current with positive and negative both direction folds flow through P10, P11 and N10, N11 simultaneously to positive-negative output end.PMOS pipe P3, P6 and NMOS pipe N3, N6 play the effect of current source.But traditional rail-to-rail amplifier has the following disadvantages:
1. than the amplifier of other types, its quiescent dissipation height.
2. current source P3, P6 and N3, N6 just serve as current source, are not utilized the transmission small-signal current, are a kind of " wastes ".
3. under the strict situation of power consumption, be difficult to reach the performance of high bandwidth.
Summary of the invention
The objective of the invention is for overcoming the weak point of prior art, a kind of rail-to-rail amplifier of broadband low-power consumption that adopts the MOS device to realize is proposed, it is characterized in that low-power consumption rail-to-rail amplifier in described broadband comprises rail-to-rail input stage, amplifies intergrade and three parts of rail-to-rail output stage of reclaiming electric current;
Described rail-to-rail input stage by PMOS manage P1a, P1b, P2a, P2b and NMOS pipe N1a, N1b, N2a, N2b form;
The intergrade that electric current is reclaimed in described amplification comprises four current mirrors compositions: form first current mirror by NMOS pipe N7, N4, N3, form second current mirror by NMOS pipe N8, N5, N6, form the 4th current mirror by PMOS pipe P7, P4, P3 the 3rd current mirror and by P8, P5, P6; Described rail-to-rail output stage mainly is made up of NMOS pipe N10, N11 and PMOS pipe P10, P11.
The forward input signal of described rail-to-rail amplifier converts voltage signal to downward current signal by input pipe P1a, the negative sense input signal converts voltage signal to upwards recovery current signal by input pipe P2b simultaneously, the 3rd current mirror that this recovery electric current is formed by cross-coupled N7, N4, N3 is exaggerated K doubly, flows to the negative sense output with the downward electric current of P1a pipe by N10; Simultaneously, the negative sense input signal converts voltage signal to upwards current signal by input pipe P2a, the forward input signal converts voltage signal to downward recovery current signal by input pipe P1b simultaneously, second current mirror that this recovery electric current is formed by cross-coupled current mirror N8, N6, N5 is exaggerated K doubly, flows to the forward output with the downward electric current of P2a pipe by N11; In addition, the forward input signal converts voltage signal to upwards current signal by input pipe N1a, the negative sense input signal converts voltage signal to downward recovery current signal by input pipe N2b simultaneously, the 3rd current mirror that this recovery electric current is formed by cross-coupled P7, P4, P3 is exaggerated K doubly, flows to the negative sense output with N1a pipe electric current upwards by P10; Simultaneously, the negative sense input signal converts voltage signal to downward current signal by input pipe N2a, the forward input signal converts voltage signal to upwards recovery current signal by input pipe N1b simultaneously, second current mirror that this recovery electric current is formed by cross-coupled P8, P6, P5 is exaggerated K doubly, flows to the forward output with the downward electric current of N2a pipe by P11.Wherein each metal-oxide-semiconductor adopts the strain silicon MOS pipe of conventional MOS transistor or employing high mobility, with the performance of further this circuit of raising.
The size of described PMOS pipe is consistent; The size of described NMOS pipe is consistent.
The invention has the beneficial effects as follows that this novel rail-to-rail amplifier of broadband low-power consumption compares with the traditional design scheme and have following tangible advantage: have the ability that under the situation that does not increase power consumption, improves the above bandwidth of twice; Increase low-frequency gain, the large-signal Slew Rate that increases amplifier and small-signal settling time; Can also be operated under the environment of low-voltage simultaneously, increase the plurality of advantages such as amplitude of input/output signal.
Description of drawings
Fig. 1 is the circuit structure diagram of traditional rail-to-rail amplifier.
Fig. 2 is the circuit structure diagram of the novel rail-to-rail amplifier of broadband low-power consumption of the present invention.
Fig. 3 is the novel rail-to-rail amplifier of broadband low-power consumption of the present invention and the frequency response emulation comparison diagram of traditional rail-to-rail amplifier.
Embodiment
The rail-to-rail amplifier of broadband low-power consumption that the employing MOS device that the present invention proposes is realized, its a kind of embodiment adopts CMOS technology to realize.The rail-to-rail amplifier of this broadband low-power consumption comprises rail-to-rail input stage, amplifies intergrade and three parts of rail-to-rail output stage of reclaiming electric current;
As shown in Figure 2, described rail-to-rail input stage by PMOS manage P1a, P1b, P2a, P2b and NMOS pipe N1a, N1b, N2a, N2b form;
The intergrade that electric current is reclaimed in described amplification comprises four current mirrors compositions: form first current mirror by NMOS pipe N7, N4, N3, form second current mirror by NMOS pipe N8, N5, N6, form the 4th current mirror by PMOS pipe P7, P4, P3 the 3rd current mirror and by P8, P5, P6; Described rail-to-rail output stage mainly is made up of NMOS pipe N10, N11 and PMOS pipe P10, P11.Annexation in Fig. 2 between each device: forward input signal and input pipe P1a, P1b, N1a, the grid of N1b connects together, negative sense input signal and input pipe P2a, P2b, N2a, the grid of N2b connects together, the drain electrode of P1b and N5, the grid of N6 links together, the drain electrode of P2b and N3, the grid of N4 links together, the drain electrode of N1b and P5, the grid of P6 links together, the drain electrode of N2b and P3, the grid of P4 links together, P3, the drain electrode of P6 respectively with P10, the source class of P11 links together, N3, the drain electrode of N6 respectively with N10, the source class of N11 links together, N10, the drain electrode of N11 is respectively at P10, the drain electrode of P11 links together.
The operation principle of described rail-to-rail amplifier is that the forward input signal converts voltage signal to downward current signal by input pipe P1a, the negative sense input signal converts voltage signal to upwards recovery current signal by input pipe P2b simultaneously, the 3rd current mirror that this recovery electric current is formed by cross-coupled N7, N4, N3 is exaggerated K doubly, flows to the negative sense output with the downward electric current of P1a pipe by N10; Simultaneously, the negative sense input signal converts voltage signal to upwards current signal by input pipe P2a, the forward input signal converts voltage signal to downward recovery current signal by input pipe P1b simultaneously, second current mirror that this recovery electric current is formed by cross-coupled current mirror N8, N6, N5 is exaggerated K doubly, flows to the forward output with the downward electric current of P2a pipe by N11; In addition, the forward input signal converts voltage signal to upwards current signal by input pipe N1a, the negative sense input signal converts voltage signal to downward recovery current signal by input pipe N2b simultaneously, the 3rd current mirror that this recovery electric current is formed by cross-coupled P7, P4, P3 is exaggerated K doubly, flows to the negative sense output with N1a pipe electric current upwards by P10; Simultaneously, the negative sense input signal converts voltage signal to downward current signal by input pipe N2a, the forward input signal converts voltage signal to upwards recovery current signal by input pipe N1b simultaneously, second current mirror that this recovery electric current is formed by cross-coupled P8, P6, P5 is exaggerated K doubly, flows to the forward output with the downward electric current of N2a pipe by P11.Can get thus, the input equivalent transconductance has been exaggerated K+1 doubly; Wherein each metal-oxide-semiconductor adopts the strain silicon MOS pipe of conventional MOS transistor or employing high mobility, with the performance of further this circuit of raising.
The size of described PMOS pipe is consistent; The size of described NMOS pipe is consistent.
Described first current mirror of being made up of NMOS pipe N7, N4, N3 is connected with the P2b pipe of input stage, described second current mirror of being made up of NMOS pipe N8, N5, N6 is connected with the P1b pipe of input stage, described the 3rd current mirror of being made up of PMOS pipe P7, P4, P3 is connected with the N2b pipe of input stage, and the 4th current mirror that PMOS pipe P8, P5, P6 form is connected with the N1b pipe of input stage.
Fig. 3 is the novel rail-to-rail amplifier of broadband low-power consumption of the present invention and the frequency response simulation result comparison diagram of traditional rail-to-rail amplifier.As can be seen from the figure, be taken as at 3 o'clock in the K value, the bandwidth of novel rail-to-rail amplifier of the present invention than the raising of the rail-to-rail amplifier of tradition more than the twice.Simultaneously, low-frequency gain still slightly improves.
Claims (3)
1. the rail-to-rail amplifier of broadband low-power consumption that adopts the MOS device to realize is characterized in that, low-power consumption rail-to-rail amplifier in described broadband comprises rail-to-rail input stage, amplifies intergrade and three parts of rail-to-rail output stage of reclaiming electric current;
Described rail-to-rail input stage by PMOS manage P1a, P1b, P2a, P2b and NMOS pipe N1a, N1b, N2a, N2b form;
The intergrade that electric current is reclaimed in described amplification comprises four current mirrors compositions: form first current mirror by NMOS pipe N7, N4, N3, form second current mirror by NMOS pipe N8, N5, N6, form the 4th current mirror by PMOS pipe P7, P4, P3 the 3rd current mirror and by P8, P5, P6;
Described rail-to-rail output stage mainly is made up of NMOS pipe N10, N11 and PMOS pipe P10, P11.
The forward input signal of the rail-to-rail amplifier of described broadband low-power consumption converts voltage signal to downward current signal by input pipe P1a, the negative sense input signal converts voltage signal to upwards recovery current signal by input pipe P2b simultaneously, the 3rd current mirror that this recovery electric current is formed by cross-coupled N7, N4, N3 is exaggerated K doubly, flows to the negative sense output with the downward electric current of P1a pipe by N10; Simultaneously, the negative sense input signal converts voltage signal to upwards current signal by input pipe P2a, the forward input signal converts voltage signal to downward recovery current signal by input pipe P1b simultaneously, second current mirror that this recovery electric current is formed by cross-coupled current mirror N8, N6, N5 is exaggerated K doubly, flows to the forward output with the downward electric current of P2a pipe by N11; In addition, the forward input signal converts voltage signal to upwards current signal by input pipe N1a, the negative sense input signal converts voltage signal to downward recovery current signal by input pipe N2b simultaneously, the 3rd current mirror that this recovery electric current is formed by cross-coupled P7, P4, P3 is exaggerated K doubly, flows to the negative sense output with N1a pipe electric current upwards by P10; Simultaneously, the negative sense input signal converts voltage signal to downward current signal by input pipe N2a, the forward input signal converts voltage signal to upwards recovery current signal by input pipe N1b simultaneously, second current mirror that this recovery electric current is formed by cross-coupled P8, P6, P5 is exaggerated K doubly, flows to the forward output with the downward electric current of N2a pipe by P11.Wherein each metal-oxide-semiconductor adopts the strain silicon MOS pipe of conventional MOS transistor or employing high mobility, with the performance of further this circuit of raising.
2. according to the rail-to-rail amplifier of broadband low-power consumption of the described employing metal-oxide-semiconductor of claim 1, it is characterized in that the size of described PMOS pipe is consistent; The size of described NMOS pipe is consistent.
3. according to the rail-to-rail amplifier of broadband low-power consumption of the described employing metal-oxide-semiconductor of claim 1, it is characterized in that, described first current mirror of being made up of NMOS pipe N7, N4, N3 is connected with the P2b pipe of input stage, described second current mirror of being made up of NMOS pipe N8, N5, N6 is connected with the P1b pipe of input stage, described the 3rd current mirror of being made up of PMOS pipe P7, P4, P3 is connected with the N2b pipe of input stage, and the 4th current mirror that PMOS pipe P8, P5, P6 form is connected with the N1b pipe of input stage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110061082 CN102176660B (en) | 2011-03-15 | 2011-03-15 | Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110061082 CN102176660B (en) | 2011-03-15 | 2011-03-15 | Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102176660A true CN102176660A (en) | 2011-09-07 |
CN102176660B CN102176660B (en) | 2013-05-22 |
Family
ID=44519770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110061082 Active CN102176660B (en) | 2011-03-15 | 2011-03-15 | Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102176660B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103457554A (en) * | 2013-08-22 | 2013-12-18 | 龙芯中科技术有限公司 | Rail-to-rail operation amplifier |
CN104656738A (en) * | 2014-12-23 | 2015-05-27 | 工业和信息化部电子第五研究所 | Infrared focal plane high-rate constant trans-conductance rail-to-rail output stage circuit |
CN106330111A (en) * | 2015-07-10 | 2017-01-11 | 福州瑞芯微电子股份有限公司 | Audio device drive amplifier |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6653894B2 (en) * | 2002-04-19 | 2003-11-25 | Texas Instruments Inc | Integrated current mirror in output stage of operational amplifier |
CN101232293A (en) * | 2008-01-03 | 2008-07-30 | 湖南大学 | Current mode radio frequency receiver front end |
CN101459412A (en) * | 2007-12-13 | 2009-06-17 | 上海华虹Nec电子有限公司 | Full scale input-output operational amplifier |
-
2011
- 2011-03-15 CN CN 201110061082 patent/CN102176660B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6653894B2 (en) * | 2002-04-19 | 2003-11-25 | Texas Instruments Inc | Integrated current mirror in output stage of operational amplifier |
CN101459412A (en) * | 2007-12-13 | 2009-06-17 | 上海华虹Nec电子有限公司 | Full scale input-output operational amplifier |
CN101232293A (en) * | 2008-01-03 | 2008-07-30 | 湖南大学 | Current mode radio frequency receiver front end |
Non-Patent Citations (2)
Title |
---|
王为之 等: "一种采用共栅频率补偿的轨到轨输入输出放大器", 《半导体学报》 * |
王向展 等: "一种低压低功耗CMOS+ULSI运算放大器单元", 《微电子学》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103457554A (en) * | 2013-08-22 | 2013-12-18 | 龙芯中科技术有限公司 | Rail-to-rail operation amplifier |
CN103457554B (en) * | 2013-08-22 | 2016-08-10 | 龙芯中科技术有限公司 | Rail-to-rail operational amplifier |
CN104656738A (en) * | 2014-12-23 | 2015-05-27 | 工业和信息化部电子第五研究所 | Infrared focal plane high-rate constant trans-conductance rail-to-rail output stage circuit |
CN104656738B (en) * | 2014-12-23 | 2016-05-11 | 工业和信息化部电子第五研究所 | The rail-to-rail output-stage circuit of the permanent mutual conductance of infrared focus plane two-forty |
CN106330111A (en) * | 2015-07-10 | 2017-01-11 | 福州瑞芯微电子股份有限公司 | Audio device drive amplifier |
Also Published As
Publication number | Publication date |
---|---|
CN102176660B (en) | 2013-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102176659B (en) | Transconductance-enhanced recovery current folded MOS (metal oxide semiconductor) transistor cascade amplifier | |
CN102176658B (en) | Symmetrically-folded MOS (metal oxide semiconductor) transistor cascade amplifier with broadband and low-power consumption | |
CN102158188B (en) | Low-power consumption bandwidth-multiplying operational amplifier realized by metal oxide semiconductor (MOS) devices | |
CN103023437A (en) | Novel dynamic comparer capable of correcting offset voltage | |
CN101741328A (en) | Complementary input circularly folding operational transconductance amplifier | |
CN102158181B (en) | Low-power consumption bandwidth multiplication chopping stabilized operational amplifier based on MOS (metal oxide semiconductor) device | |
CN103762947B (en) | A kind of low noise trsanscondutance amplifier of cross-couplings input | |
CN102096436A (en) | Low-voltage low-power band gap reference voltage source implemented by MOS device | |
CN102176661B (en) | Chopping stabilized rail-to-rail amplifier with broadband and low-power consumption based on MOS (metal oxide semiconductor) device | |
CN102176660B (en) | Broadband rail-to-rail amplifier with low power consumption, realized by MOS (Metal Oxide Semiconductor) components | |
CN102122189A (en) | Temperature compensation current source having wide temperature scope and being compatible with CMOS (complementary metal-oxide-semiconductor transistor) technique | |
CN107071640B (en) | Dual-voltage-domain driving operation circuit | |
CN101841315A (en) | High speed comparator | |
CN102129264A (en) | Low-temperature-coefficient current source fully compatible with standard CMOS (Complementary Metal-Oxide-Semiconductor) process | |
CN102075151A (en) | Complementary circulation folding gain bootstrapping operational amplifier circuit with preamplifier | |
CN102142816B (en) | Wideband current-recovery chopped-wave stabilized amplifier with low energy consumption on the basis of metal oxide semiconductor (MOS) device | |
Kim et al. | Low-power class-AB CMOS OTA with high slew-rate | |
Bahubalindruni et al. | High-gain amplifier with n-type transistors | |
CN103457554A (en) | Rail-to-rail operation amplifier | |
CN201813350U (en) | Low-voltage rail-to-rail operation amplifying circuit | |
TW200906060A (en) | Low voltage differential signal (LVDS) receiver | |
TW200847618A (en) | Class AB amplifier | |
CN104935272A (en) | Transconductance enhancement mode low voltage transconductance amplifier realized based on complementary metal oxide semiconductor (CMOS) device | |
CN206164477U (en) | Current reuse type high frequency amplifier circuit | |
CN102098014A (en) | Complementary circularly-folded gain bootstrap transconductance operation amplifier with preamplifier |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |