CN102169811A - 基板加热装置和基板加热方法以及基板处理系统 - Google Patents

基板加热装置和基板加热方法以及基板处理系统 Download PDF

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Publication number
CN102169811A
CN102169811A CN2011100327429A CN201110032742A CN102169811A CN 102169811 A CN102169811 A CN 102169811A CN 2011100327429 A CN2011100327429 A CN 2011100327429A CN 201110032742 A CN201110032742 A CN 201110032742A CN 102169811 A CN102169811 A CN 102169811A
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China
Prior art keywords
substrate
pressure
temperature
container
gas
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CN2011100327429A
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English (en)
Chinese (zh)
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大久保智也
杉山正树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN102169811A publication Critical patent/CN102169811A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN2011100327429A 2010-01-27 2011-01-27 基板加热装置和基板加热方法以及基板处理系统 Pending CN102169811A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010015600A JP5478280B2 (ja) 2010-01-27 2010-01-27 基板加熱装置および基板加熱方法、ならびに基板処理システム
JP2010-015600 2010-01-27

Publications (1)

Publication Number Publication Date
CN102169811A true CN102169811A (zh) 2011-08-31

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CN2011100327429A Pending CN102169811A (zh) 2010-01-27 2011-01-27 基板加热装置和基板加热方法以及基板处理系统

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Country Link
US (1) US20110183279A1 (https=)
EP (1) EP2355133A3 (https=)
JP (1) JP5478280B2 (https=)
KR (1) KR101243397B1 (https=)
CN (1) CN102169811A (https=)
TW (1) TW201145394A (https=)

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CN104488358A (zh) * 2012-07-25 2015-04-01 东京毅力科创株式会社 烘焙处理系统
CN106292786A (zh) * 2015-06-02 2017-01-04 英属开曼群岛商精曜有限公司 降压方法及其降压设备
CN107799434A (zh) * 2016-08-30 2018-03-13 东京应化工业株式会社 基板加热装置以及基板加热方法
CN110233116A (zh) * 2018-03-06 2019-09-13 株式会社斯库林集团 基板处理装置
CN110323161A (zh) * 2018-03-30 2019-10-11 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
CN110391132A (zh) * 2018-04-16 2019-10-29 芝浦机械电子株式会社 有机膜形成装置

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US9378994B2 (en) 2013-03-15 2016-06-28 Applied Materials, Inc. Multi-position batch load lock apparatus and systems and methods including same
JP6303592B2 (ja) * 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
CN105470180A (zh) * 2014-09-05 2016-04-06 北京北方微电子基地设备工艺研究中心有限责任公司 晶片升起组件及用于从晶片升起组件上取放晶片的机械手
US10861731B2 (en) * 2017-01-19 2020-12-08 Axcelis Technologies, Inc. Radiant heating presoak
KR102298654B1 (ko) * 2017-04-19 2021-09-07 주식회사 미코세라믹스 내구성이 개선된 세라믹 히터
CN107634017A (zh) * 2017-08-24 2018-01-26 德淮半导体有限公司 晶圆退火装置
US11955362B2 (en) 2017-09-13 2024-04-09 Applied Materials, Inc. Substrate support for reduced damage substrate backside
JP6871959B2 (ja) * 2018-03-30 2021-05-19 芝浦メカトロニクス株式会社 有機膜形成装置、および有機膜の製造方法
JP6940541B2 (ja) * 2018-04-16 2021-09-29 芝浦メカトロニクス株式会社 有機膜形成装置
JP7199211B2 (ja) * 2018-12-03 2023-01-05 東京エレクトロン株式会社 搬送検知方法及び基板処理装置
KR102925768B1 (ko) * 2021-07-13 2026-02-11 주식회사 원익아이피에스 기판 처리 방법

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CN1282099A (zh) * 1999-07-27 2001-01-31 株式会社东芝 半导体工件处理装置及方法
JP2005167107A (ja) * 2003-12-05 2005-06-23 Seiko Epson Corp 半導体製造装置及び半導体装置の製造方法
CN1779939A (zh) * 2004-10-29 2006-05-31 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法
CN101147244A (zh) * 2005-07-28 2008-03-19 东京毅力科创株式会社 基板处理方法和基板处理装置

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JP4386983B2 (ja) 1998-02-25 2009-12-16 キヤノンアネルバ株式会社 基板処理装置、マルチチャンバー基板処理装置及び電子デバイス製作方法
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JP4616873B2 (ja) * 2007-09-28 2011-01-19 東京エレクトロン株式会社 半導体製造装置、基板保持方法及びプログラム
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JP5090536B2 (ja) * 2008-11-21 2012-12-05 芝浦メカトロニクス株式会社 基板処理方法及び基板処理装置
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US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
CN1282099A (zh) * 1999-07-27 2001-01-31 株式会社东芝 半导体工件处理装置及方法
JP2005167107A (ja) * 2003-12-05 2005-06-23 Seiko Epson Corp 半導体製造装置及び半導体装置の製造方法
CN1779939A (zh) * 2004-10-29 2006-05-31 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法
CN101147244A (zh) * 2005-07-28 2008-03-19 东京毅力科创株式会社 基板处理方法和基板处理装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104488358A (zh) * 2012-07-25 2015-04-01 东京毅力科创株式会社 烘焙处理系统
CN104488358B (zh) * 2012-07-25 2016-08-17 东京毅力科创株式会社 烘焙处理系统及有机el元件的有机功能膜的层叠体的制造方法
CN106292786A (zh) * 2015-06-02 2017-01-04 英属开曼群岛商精曜有限公司 降压方法及其降压设备
CN107799434A (zh) * 2016-08-30 2018-03-13 东京应化工业株式会社 基板加热装置以及基板加热方法
CN107799434B (zh) * 2016-08-30 2022-10-28 东京应化工业株式会社 基板加热装置以及基板加热方法
CN110233116A (zh) * 2018-03-06 2019-09-13 株式会社斯库林集团 基板处理装置
CN110233116B (zh) * 2018-03-06 2023-07-04 株式会社斯库林集团 基板处理装置
CN110323161A (zh) * 2018-03-30 2019-10-11 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
CN110323161B (zh) * 2018-03-30 2023-06-06 芝浦机械电子株式会社 有机膜形成装置以及有机膜制造方法
CN110391132A (zh) * 2018-04-16 2019-10-29 芝浦机械电子株式会社 有机膜形成装置
CN110391132B (zh) * 2018-04-16 2023-05-16 芝浦机械电子株式会社 有机膜形成装置

Also Published As

Publication number Publication date
JP2011155137A (ja) 2011-08-11
JP5478280B2 (ja) 2014-04-23
US20110183279A1 (en) 2011-07-28
EP2355133A3 (en) 2013-05-22
TW201145394A (en) 2011-12-16
KR20110088425A (ko) 2011-08-03
EP2355133A2 (en) 2011-08-10
KR101243397B1 (ko) 2013-03-13

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Application publication date: 20110831