CN102169022A - Experiment method for pulsed laser single event upset cross section - Google Patents
Experiment method for pulsed laser single event upset cross section Download PDFInfo
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Abstract
The invention provides an experiment method for a pulsed laser single event upset cross section. The method comprises the steps of scanning and irradiating an inside of a device according to pulsed laser E of a certain value; obtaining a laser single event upset cross section value under the E according to single event upset frequency, irradiation frequency (stationing number of scanning) of the monitored device; and obtaining a Sigma~E curve of the laser single event upset cross section through changing the pulsed laser with different energy for scanning and irradiating. The invention provides technical support for pre-estimating single event upset resistance of a to-be-tested device and enables easier and more practical research on ground pulsed laser simulation of single event effects in the future.
Description
Technical field
The experimental technique in a kind of pulse laser single-particle inversion of the present invention cross section belongs to Space Radiation Effects and reinforcement technique field.
Background technology
Single-particle inversion (SEU) is that high energy charged particles goes into electron device or circuit to interact in the space radiation environment, makes it to produce logic error and parafunctional phenomenon.Because used a large amount of microelectronic components and integrated circuit on the spacecraft, the safe and reliable operation of spacecraft depends on the operate as normal of these devices and circuit, and spacecraft flies in the cosmic space, be in the radiation environment of charged particle formation always.High energy particle in the space radiation environment can cause star with device, circuit SEU to take place, and becoming influences spacecraft in highly reliable, the long-life principal element of rail, has caused spacecraft designers' attention.
The adoptable dummy source of ground simulation single particle effect experimental study has a lot, as accelerator, natural radiation source and pulse laser beam etc.Accelerator is the classic method of research single particle effect, has obtained immense success.By the accelerator irradiation test, can obtain device single-particle cross section σ～LET curve.But there is certain limitation in the accelerator simulation means, such as, particle parameter regulation difficulty, it is oversize to change ionic species and energy required time, and measured device is caused certain radiation damage etc.In addition, the high energy proton that proton precessional magnetometer produces also is important dummy source, does not also possess but proton precessional magnetometer is at present domestic.The californium source (
252Cf) be the heavy ion fragment simulation single particle effect that utilizes the radioactive source fission to produce, major advantage is cheap, easy to use, the approximate point source of equipment and experimental expenses, only be suitable for measuring the more shallow device of sensitive layer distribution, factors such as its radioactivity threat and range weak point also make its application be restricted simultaneously.Pulse laser simulation single particle effect is a kind of easy, economic, safe and reliable laboratory method, be in recent ten years just Application and Development in the Laboratory Evaluation means of integrated circuit Design of Reinforcement checking, it can remedy the deficiency of accelerator simulation means to a great extent, becomes both at home and abroad the focus of research in recent years.Set up a collection of advanced person's laser analog pilot system both at home and abroad in succession, obtained a large amount of achievements in research with the single particle effect susceptibility test of device, the batch screening of radiation hardened component and the aspects such as checking of safeguard procedures at star.Obtain laser upset cross section σ～E curve by experiment, for star provides important technical parameter with the assessment of device and the anti-single-particle inversion ability of circuit, most important for the application of this device in the space electronic system.
Summary of the invention
The objective of the invention is the problem that in breadboard pulse laser single particle effect system, obtains laser upset cross section curve in order to solve, proposed the experimental technique in a kind of pulse laser single-particle inversion cross section, made the research work of the single particle effect of ground pulse laser simulation from now on convenient, practical.
The objective of the invention is by realizing with following technical proposals.
The experimental technique in a kind of pulse laser single-particle inversion of the present invention cross section is:
Pulse laser with the individual different-energy E of i (requiring i 〉=5 usually), carry out the scanning and irradiation chip, laser irradiation device total degree M (number of times of pulse laser irradiation device is identical with the population of heavy ion irradiation on device), the single event that detection means takes place is counted N, and then energy is that single-particle inversion cross section σ (i) of device is under the laser radiation of E (i):
In the formula, S is the device chip area, and unit is cm
2/ device.
Just can draw laser single-particle inversion cross section σ under the different-energy according to test figure, thereby obtain laser single-particle inversion cross section σ～E (energy) curve.
Its concrete implementation step is as follows:
(1) test specimen is prepared: should use hood-opening device to the test specimen processing of uncapping before the test; After uncapping, sample is carried out the test of electrical property and functional parameter, carry out follow-up test after qualified, and sample is numbered;
(2) test unit is placed: test specimen is inserted on the DUT plate, the DUT plate is fixed on the xyz precise mobile platform, should prevent the DUT short circuit and rock, guarantee the mobile consistance of DUT plate and xyz precise mobile platform, and guarantee that the sensitive part on chip under test surface is vertical with pulse laser beam.
(3) correctly connect test macro, DUT plate, electric power system etc., test macro is added electrical testing, whether test sample and system's operation be normal;
Guaranteeing on the sample basis working properly that (4) the unbalanced pulse lasing source carries out light beam to the laser of choosing wavelength in the test and focuses on and locate.
(5) determine that irradiation origin (starting point), sweep parameter (time interval that x axle translational speed, y axle translational speed, x axle and y axle move etc.) information and irradiation scan (umber of exposures) M that layouts.On sample basis working properly, choose the pulsed laser energy of certain numerical value and (choose less energy irradiation when advising on-test, the test energy is from low to high) the beginning scanning and irradiation, promptly use the pulse laser of the individual different-energy E of i (requiring i 〉=5 usually) to carry out chip irradiation.In the irradiation process, monitoring system monitors in real time that the SEU phenomenon that sample takes place characterizes, the SEU phenomenon by record characterizes and adds up single event and count N, simultaneously, in this experiment, also can write down the electrical quantity of sample, for further device protection provides reference;
Again according to the laser irradiation device total degree M (number of times of pulse laser irradiation device is identical with the population of heavy ion irradiation on device) of above test data sheet, the single event that detection means takes place is counted N, and single-particle inversion cross section σ (i) that then can calculate device under the laser radiation of E (i) is:
In the formula, S is the device chip area of setting in advance, and unit is cm
2
Just can draw laser single-particle inversion cross section σ under the different-energy according to test figure, thereby obtain laser single-particle inversion cross section σ～E (energy) curve.
(7) after test finishes, close pulse laser simulation experiment system and TT﹠C system.
(8) acquisition device laser single-particle inversion cross section and σ～E curve substitution space single-particle are estimated software and can be realized estimating tested device anti-single particle overturn ability.
If desired, can after irradiation finishes, change laser energy, repeat above-mentioned steps (1)-(5) and carry out irradiation test, write down corresponding data.Until reaching test objective, the test of constipation bundle.
Beneficial effect
(1) can acquisition device laser single-particle inversion cross section and σ～E curve;
(2) can realize estimating to tested device anti-single particle overturn ability.
Description of drawings
Fig. 1 is a pulse laser simulation single particle effect simulation experiment system used in the embodiment of the invention 1;
Fig. 2 is that the irradiation that adopts in the embodiment of the invention 1 accurately scans the location synoptic diagram;
Fig. 3 is the IDT6116 laser single-particle inversion cross section σ～E curve that obtains in the embodiment of the invention 1.
Wherein, 1-1He-Ne laser instrument, 1-2 nanosecond Laser Simulator Radon-5E, 1-3 focusing unit, 1-4 colorful CCD camera, 1-5 laser energy instrument, 1-6 control and test cell, 1-7 CCD camera PC interface board, 1-8 laser energy instrument PC interface board, 1-9 observing and controlling computing machine, 1-10 DUT functional test PC interface board, 1-11 buffer cell, 1-12 X-Y mobile platform, 1-13 DUT plate, 1-14 microscopie unit Biolam M, 1-15 picosecond laser instrument EKSMA PL2143; 2-1 chip width, 2-2 scanning track, 2-3 x axle moving step length Δ x, 2-4 y axle moving step length Δ y, 2-5 pulse laser irradiation position, 2-6 chip length; 3-1 IDT6116 device laser upset cross section σ (cm
2/ device), 3-2 laser energy (nJ).
Embodiment
Static memory IDT 6116 devices of using below in conjunction with the space are example, in conjunction with the accompanying drawings actual test method of the present invention are described further.
Focusing unit 1-3 comprises colorful CCD camera 1-4, laser energy instrument 1-5, DUT plate 1-13 and microscopie unit Biolam M 1-14; Control and test cell 1-6 comprise CCD camera PC interface board 1-7, laser energy instrument PC interface board 1-8, DUT functional test PC interface board 1-10, buffer cell 1-11 and observing and controlling computing machine 1-9.
Concrete annexation is as follows:
Nanosecond Laser Simulator Radon-5E 1-2 is installed between He-Ne laser instrument 1-1 and the focusing unit 1-3, picosecond laser instrument EKSMA PL2143 1-15, have on the microscopie unit Biolam M 1-14 of colorful CCD camera 1-4 laser energy instrument 1-5 is arranged, the microscope camera lens of microscopie unit Biolam M 1-14 is aimed at X-Y mobile platform 1-12, DUT functional test PC interface board 1-10 is fixed on the X-Y mobile platform 1-12, colorful CCD camera 1-4 is connected with CCD camera PC interface board 1-7, laser energy instrument 1-5 is connected with laser energy instrument PC interface board 1-8, DUT plate 1-13 is connected with buffer cell 1-11, buffer cell 1-11 is connected with DUT functional test PC interface board 1-10, observing and controlling computing machine 1-9 respectively with CCD camera PC interface board 1-7, laser energy instrument PC interface board 1-8, DUT functional test PC interface board 1-10 connects.
The test of pulse laser Simulation with I DT6116 single particle effect, its experimental system as shown in Figure 1.
(1) the IDT6116 device of ceramic package is uncapped, the normal IDT6116 device in back of uncapping is placed the DUT mobile platform of laser analog single particle effect pilot system, correctly connect test macro and electric power system;
(2) the DUT platform sample to laser analog single particle effect pilot system focuses on and locatees;
(3) determine that the scanning of irradiation origin (starting point), sweep parameter (time interval that x axle translational speed, y axle translational speed, x axle and y axle move etc.) information and irradiation layouts (umber of exposures), as shown in Figure 2.
(4) on sample basis working properly, choose the pulsed laser energy of 0.01-10nJ, the beginning scanning and irradiation.In the irradiation process, thereby monitoring system is monitored the SEU phenomenon that tested IDT6116 sample takes place in real time, record SEU event number.
(5) after irradiation finishes, change laser energy, repeat above-mentioned steps (4) and carry out irradiation test, write down corresponding data.Repeat above-mentioned test, until reaching test objective, the test of constipation bundle.
(6) in the irradiation process, the IDT6116 device laser single-particle inversion cross section of acquisition the results are shown in Table 1, and laser single-particle inversion cross section σ～E curve is illustrated in fig. 3 shown below.
Table 1 IDT6116 device laser single-particle inversion cross section experimental result
| Laser energy (nJ) | Cross section σ (cm 2/ device) |
| 0.168 | 2×10 -4 |
| 0.303 | 1.9×10 -2 |
| 0.44 | 7.1×10 -2 |
| 0.592 | 2.0×10 -1 |
| 0.75 | 2.19×10 -1 |
(7) after test finishes, close pulse laser simulation experiment system and TT﹠C system.
(8) acquisition device laser single-particle inversion cross section and σ～E curve substitution space single-particle are estimated software and can be realized that this software is the engineering software of buyable to the estimating of tested device anti-single particle overturn ability.
Claims (7)
1. the experimental technique in pulse laser single-particle inversion cross section, it is characterized in that: with the pulse laser of i different-energy E, carry out the scanning and irradiation chip, laser irradiation device total degree M, the single event that detection means takes place is counted N, and then energy is that single-particle inversion cross section σ (i) of device is under the laser radiation of E (i):
In the formula, S is the device chip area, and unit is cm
2/ device.
Just can draw laser single-particle inversion cross section σ under the different-energy according to test figure, thereby obtain laser single-particle inversion cross section σ～E energy trace.
2. the experimental technique in pulse laser single-particle inversion according to claim 1 cross section is characterized in that: its concrete implementation step is as follows:
(1) test specimen is prepared: should use hood-opening device to the test specimen processing of uncapping before the test; After uncapping, sample is carried out the test of electrical property and functional parameter, carry out follow-up test after qualified, and sample is numbered;
(2) test unit is placed: test specimen is inserted on the DUT plate, the DUT plate is fixed on the xyz precise mobile platform, should prevent the DUT short circuit and rock, guarantee the mobile consistance of DUT plate and xyz precise mobile platform, and guarantee that the sensitive part on chip under test surface is vertical with pulse laser beam;
(3) correctly connect test macro, DUT plate, electric power system etc., test macro is added electrical testing, whether test sample and system's operation be normal;
Guaranteeing on the sample basis working properly that (4) the unbalanced pulse lasing source carries out light beam to the laser of choosing wavelength in the test and focuses on and locate;
(5) determine irradiation origin, sweep parameter information and laser irradiation device total degree M.On sample basis working properly, choose the pulsed laser energy of setting numerical value and begin scanning and irradiation, promptly the pulse laser with i different-energy E carries out chip irradiation; In the irradiation process, monitoring system monitors in real time that the single-particle inversion phenomenon that sample takes place characterizes, the single-particle inversion phenomenon by record characterizes and adds up single event and count N, the single event that takes place according to the laser irradiation device total degree M detection means of above test data sheet is counted N again, and single-particle inversion cross section σ (i) that then can calculate device under the laser radiation of E (i) is:
In the formula, S is the device chip area of setting in advance, and unit is cm
2
Just draw laser single-particle inversion cross section σ under the different-energy according to test figure, thereby obtain laser single-particle inversion cross section σ～E curve;
(7) after test finishes, close pulse laser simulation experiment system and TT﹠C system;
(8) software realization estimating tested device anti-single particle overturn ability estimated in acquisition device laser single-particle inversion cross section and σ～E curve substitution space single-particle;
If desired, can after irradiation finishes, change laser energy, repeat above-mentioned steps (1)-(5) and carry out irradiation test, write down corresponding data.Until reaching test objective, the test of constipation bundle.
3. the experimental technique in pulse laser single-particle inversion according to claim 1 cross section is characterized in that: i 〉=5.
4. the experimental technique in pulse laser single-particle inversion according to claim 1 cross section is characterized in that: among the laser irradiation device total degree M, the number of times of pulse laser irradiation device is identical with the population of heavy ion irradiation on device.
5. the experimental technique in pulse laser single-particle inversion according to claim 1 cross section is characterized in that: sweep parameter information comprises the time interval that x axle translational speed, y axle translational speed, x axle and y axle move.
6. the experimental technique in pulse laser single-particle inversion according to claim 1 cross section is characterized in that: the principle of choosing the pulsed laser energy of setting numerical value is, chooses less energy irradiation during on-test, and the test energy from low to high.
7. the experimental technique in pulse laser single-particle inversion according to claim 1 cross section is characterized in that: also record the electrical quantity of sample in this experiment, for further device protection provides reference.
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| CN102495355A (en) * | 2011-12-31 | 2012-06-13 | 中国科学院微电子研究所 | Laser pulse single particle effect simulation system |
| CN102520333A (en) * | 2011-12-15 | 2012-06-27 | 北京航空航天大学 | Device for carrying out single particle overturn effect simulation on digital signal processor applied in space |
| CN102521467A (en) * | 2011-12-29 | 2012-06-27 | 北京航空航天大学 | Bit-by-bit upset fault injection method specifically for SRAM (static random access memory) type FPGA (field programmable gate array) |
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| US10956265B2 (en) | 2015-02-03 | 2021-03-23 | Hamilton Sundstrand Corporation | Method of performing single event upset testing |
| CN105445640B (en) * | 2015-11-24 | 2018-05-08 | 北京时代民芯科技有限公司 | The single-particle sensitiveness decision method of different instruction set based on pulse laser equipment |
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Application publication date: 20110831 |