CN103869237B - A kind of pulse laser number optimization method and the method for testing of SEU cross section - Google Patents
A kind of pulse laser number optimization method and the method for testing of SEU cross section Download PDFInfo
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- CN103869237B CN103869237B CN201210536186.3A CN201210536186A CN103869237B CN 103869237 B CN103869237 B CN 103869237B CN 201210536186 A CN201210536186 A CN 201210536186A CN 103869237 B CN103869237 B CN 103869237B
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Abstract
The present invention relates to a kind of method optimizing pulse laser number, the method is for optimizing the pulse laser number of pulse laser test device SEU cross section, for a certain laser energy Ei, pulse laser number F uses following steps to determine: step 101) and obtain the facula area τ under this laser energy and device individual feature cellar area Δ；Step 102) obtain laser number judgement reference value, this judgement reference value is above-mentioned facula area τ and the ratio of device individual feature cellar area Δ；Step 103) when adjudicating reference value more than 1, described laser number determines according to facula area size；When adjudicating reference value less than 1, described laser number determines according to individual feature cellar area.When adjudicating reference value n more than 1, described laser number F=1/k τ；When n is less than 1, described laser number F=1/k Δ, wherein k is modulation factor, and its span is 1 25.
Description
Technical field
The invention mainly relates to a kind of new side utilizing pul sed laser simulation experimental test device SEU cross section
Method, is that one is mainly directed towards the numeric class device SEU cross section tests such as memorizer, microprocessor and FPGA
Test method, belong to spatial environments radiation effect ground simulation test technical field.
Background technology
In recent years, along with progressively reducing of semiconductor technology characteristic size, the numeral used in Chinese Space task
Cmos device is the most gradually based on sub-micro device, and above-mentioned device is typically to play crucial work in electronic system
The highly integrated chip such as microprocessor, FPGA and memorizer.Spoke when the high energy charged particles being in the outer space
When penetrating in environment, occur Single event upset effecf cause the abnormal probability of chip operation with the reduction of process by
Cumulative greatly.In view of highly integrated chip increase of direct application risk in space tasks, its anti-single particle is overturn
The accurate evaluation of ability is that it is applied to the prerequisite of Spacecraft Electronic system.
Although high-energy particle accelerator is the best means carrying out device single particle effect test on ground, but due to examination
The high cost tested and long period characteristic so that its application in terms of quick, low cost test receives limit greatly
System.The pul sed laser simulation single particle effect examination grown up by United States Naval Research Laboratory from the eighties in last century
Proved recipe method, because it is efficient, convenient and the feature such as low cost so that it is at single particle effect experimental test and study mechanism
Aspect is widely used.Overseas utilization pulse laser research device single particle effect achieves a lot of achievement,
Just deliver as far back as 1994 and utilized pulse laser to obtain SRAM SEU cross section σ～the article of E curve,
Test data is provided for device radiation hardening.Domestic No.5 Academy, China Space Science and Technology Group Co., Ltd. the 510th grinds
Study carefully institute, declared " experimental technique of a kind of pulsed laser single event upset cross section " in the end of the year 2011
(201010624396.9) patent, mainly on the basis of summing up the test method abroad delivered, proposes
The method having test data support, to external published method without innovation, does not more account for device work
The impact reducing pair cross-section test method of skill size.
And along with the reduction of device technology size, traditional SEU cross section test method, i.e. do not considering arteries and veins
Under the influence of impulse light facula area size and device technology size relationship, the upset cross section result recorded and heavy ion
Test data difference is the biggest.Therefore, the most simply according to the ratio relation of single-particle inversion number Yu pulse laser fluence
Determine cross-section data, it is easy to produce owing to bigger facula area causes too much Multiple-bit upsets to cause cross section number
According to bigger than normal, or same position is caused to be recovered the situation normally causing cross-section data less than normal by data after twice irradiation.This
Test method consider process reduce on result of the test affect on the basis of, a kind of new section test is proposed
Method so that the cross-section data of pulse laser test has preferable concordance with heavy ion result of the test.
Summary of the invention
It is an object of the invention to, in order to solve at the simple grain utilizing pulse laser test Super deep submicron process device
During sub-upset cross section, the too much Multiple-bit upsets caused due to relatively large laser facula area or same position are by two
Secondary irradiation upset number reduces, and the problem that the cross-section data that causes is bigger than normal or less than normal, thus propose a kind of pulse and swash
Light number optimization method and the method for testing of SEU cross section.
To achieve these goals, the invention provides a kind of method optimizing pulse laser number, the method is used for
Optimizing the pulse laser number of pulse laser test device SEU cross section, described method uses equation below to obtain
Single event upset effecf cross section:
Wherein, N is single-particle inversion number of times, and F is pulse laser number, and M is device storage position number, and S is
The radiation exposed area of device, σiUpset cross section for i & lt test；
For a certain laser energy Ei, above-mentioned pulse laser number F uses following steps to determine:
Step 101) obtain the facula area τ under this laser energy and device individual feature cellar area Δ；
Step 102) obtain laser number judgement reference value, this judgement reference value is above-mentioned facula area τ and device list
The ratio of individual functional unit area Δ；
Step 103) when adjudicating reference value more than 1, described laser number determines according to facula area size；When sentencing
When certainly reference value is less than 1, described laser number determines according to individual feature cellar area.
Above-mentioned steps 103) particularly as follows:
When adjudicating reference value n more than 1, described laser number F=1/k τ；When n is less than 1, described laser
Number F=1/k Δ, wherein k is modulation factor, and its span is 1-25.
Method based on above-mentioned optimization laser pulse number present invention also offers a kind of SEU cross section test side
Method, described method comprises:
(1) tested device sample is chosen；
(2) being welded on pcb board by device example, described pcb board is fixed on an XY precision by switching
Mobile station, and ensure that PCB moves with precision translation stages simultaneously；
(3) unbalanced pulse laser radiation source, sets laser scanning frequency, is focused selected laser also
Determine the starting point that laser scans at device irradiation；
(4) the initial laser ENERGY E of test is chosen0, and the laser facula area after focusing on when recording this energy is big
Little τ0, according to τ0Determine pulse laser number F with the size Δ of device example, add up single-particle inversion number N, according to
Above-mentioned each parameter value obtains corresponding to ENERGY E0Upset cross section σ0；
Continue to increase laser energy, until recording ENERGY E when device example upset cross section is not further added bys, and record
Laser facula size τ after focusing on during this energys, according to τsPulse laser is determined with the size Δ of device example
Number F, statistics single-particle inversion number N, maybe must correspond to ENERGY E according to above-mentioned each parameter value simultaneouslysTime upset
Cross section σs；；
Finally, at above-mentioned E0To EsBetween when selecting the energy value of more than at least 3 to repeat each energy value of above-mentioned acquisition
Upset cross section size；
(5) draw upset cross section σ～E curve according to the result of upper step, complete device in the case of different laser energy
SEU cross section curve.
Also comprise after above-mentioned steps (5):
(6) close pulse laser single particle effect simulated test facility, and device is carried out power-off, turn off single-particle
Upset effect test system；
(7) device SEU cross section will be obtained and σ～E curve will substitute into and estimates device in different track spaces
Upset number of times software, assess the applicable orbit altitude of this device.
Above-mentioned steps (1) comprises further:
Sample is opened encapsulation process, and including front and Kaifeng, the back dress of device, device surface metal level is more than 3
The device of layer, only carries out Kaifeng, back；
After the dress of Kaifeng, unit for electrical property parameters and functional parameter to device are tested, and choose the device that can normally work
Part sample is tested, and wherein for the print chosen with a device example no less than 3, and carries out print
Numbering.
Also comprise between above-mentioned steps (3) and step (4):
After device has been placed, electricity on which, and utilize single-particle inversion test system to be electrically connected test, inspection
Survey device and test system the most normally works；
After device and test system worked well, unbalanced pulse laser radiation source, set laser scanning frequency, right
Selected laser is focused and determines the starting point that laser scans at device irradiation.
Compared with prior art, the invention have the benefit that
(1) upset cross section measured by laser is closer to heavy ion upset cross section；
(2) Multiple-bit upsets caused during the scanning of laser irradiation is decreased；
(3) it is that the anti-single particle upset ability of device is estimated and reinforcing provides data more accurately so that device
It is more accurate to apply；
(4) laser energy is evenly distributed at device inside, it is to avoid the cross sectional testing uniformly caused because of laser energy is by mistake
Difference.
Accompanying drawing explanation
Fig. 1 is pul sed laser simulation single particle effect test system used in the embodiment of the present invention 1；
Fig. 2 is that the hot spot after pulse laser focusing used in the embodiment of the present invention 1 is illustrated with the relation of energy variation
Figure；
Fig. 3 be pulse laser focusing spot size used in the embodiment of the present invention 1 with device function cell size with
And laser scanning location schematic diagram；
Fig. 4 is HM62V16100i conventional laser method of testing, the present invention test obtained in the embodiment of the present invention 1
σ～the E curve that method, heavy ion test method record.
Detailed description of the invention
Below in conjunction with the accompanying drawings present disclosure is described in further detail.
The process of a kind of novel combination device that the present invention provides and the test side of laser facula size
Method so that the upset cross section data that laser is surveyed are more stable, closer to heavy ion data so that ground pulse laser
The research of simulation SEU cross section is more reliable.
The invention aims to the single-particle solved utilizing pulse laser test Super deep submicron process device turn over
When turning cross section, the too much Multiple-bit upsets caused due to relatively large laser facula area or same position are by two subradius
Reduce according to upset number, and the problem that the cross-section data that causes is bigger than normal or less than normal.Propose a kind of novel combination device
Process and the test method of laser facula size, overcome the test data that traditional method causes stable
Property difference shortcoming.
Present invention is specific as follows:
Conventional test methods generally uses the mode of formula (1) to obtain Single event upset effecf cross section:
In formula, N be single-particle inversion number of times, F be pulse laser number, M be device storage position number unit bit,
S is radiation exposed square measure cm of device2, σiUpset cross section unit cm for i & lt test2/bit。
Wherein the selection randomness of F is very big, is substantially determined by experimenter's subjectivity, and this is utilized pulse laser to obtain
SEU cross section data bring the biggest uncertainty, are particularly reduced in size to ultra-deep Asia when device technology
During micron, the selection of F is to σiImpact very big.
Therefore, the present invention proposes and utilizes the method for judgement reference value n i.e. formula (2) to determine laser number F:
N=τ/Δ (2)
In formula, τ is facula area size, and Δ is device individual feature cellar area size, and τ and Δ unit are all cm2；
When n is more than 1, laser irradiation number of scan points, i.e. F=1/k τ to be determined according to facula area size；N is less than 1
Time, laser number F, i.e. F=1/k Δ to be determined according to device individual feature cellar area size；Wherein k is modulation
The factor, span is between 1-25, and most preferably k value is 1.5.Require to arrange according to this, can be to greatest extent
Utilize when reducing laser facula more than the size of one functional unit of device Multiple-bit upsets that laser irradiation causes and
Test the situation that system statistics upset mistake is unstable under high-energy, and can guarantee that laser facula size is less than device
During the size of one functional unit, irradiation is complete, obtains the device upset times N corresponding to laser energy E.
It is as follows that it is embodied as step:
(1) sample is opened encapsulation process before test, including front and Kaifeng, back dress, the device table of device
The face metal level device more than 3 layers, can only carry out Kaifeng, back；After the dress of Kaifeng, be to the unit for electrical property parameters of device
Testing with functional parameter, normal work just can be tested, and generally the print with a device is many
In 3, and print is numbered；
(2) to be welded on by device as on its pcb board designed during test, PCB is fixed on one by switching
XY precision translation stages, and ensure that PCB can move with mobile station simultaneously, device is placed on translation stage, Z axis
Certain flatness is had at X/Y plane；
(3) after device has been placed, electricity on which, and it is utilized as the special single-particle inversion survey of this device design
Test system is electrically connected test, and detection device and test system the most normally work；
(4) device and test system worked well after, unbalanced pulse laser radiation source, set laser scanning frequency,
Selected laser is focused and determines the starting point that laser scans at device irradiation；
(5) the initial laser ENERGY E of test is chosen0, and the laser facula size after focusing on when recording this energy
τ0, thereby determine that laser number F is tested, add up single-particle inversion number N, formula be calculated turning over of correspondence
Turn cross section σ0；
Repeat above-mentioned test procedure, continuing to increase laser energy, not being further added by i.e. turning over until recording device upset cross section
Turning cross section saturated, corresponding laser energy is designated as Es, cross section is σs；
Additionally, at E0To EsBetween select the cross-sectional sizes that the energy test of more than at least 3 is corresponding；
(6) according to testing different-energy, the laser SEU cross section of different fluence test chosen, just can obtain
To device SEU cross section σ～E curve；
(7), after having tested, close pulse laser single particle effect simulated test facility, and device carried out power-off,
Turn off Single event upset effecf test system.
(8) substitute into estimate device in different track spaces by obtaining device SEU cross section and σ～E curve
The software of upset number of times, assesses the applicable orbit altitude of this device.
If it is required, multiple laser energy, laser fluence can be used, the most multiple laser fluences, repeat
Above-mentioned steps (1)-(5) carry out irradiation scanning, record corresponding data, until it reaches test objective.
Embodiment
As a example by a 0.13 μm HM62V16100i SRAM, in conjunction with accompanying drawing to this test
Method is described further.
Focusing unit 1-5 include 1-6 be colorful CCD camera, 1-7 be microscope, 1-8 be automatic focusing unit,
1-9 is automatic focusing objective len；1-14 measured device test control system include 1-10 be measured device, 1-11 be XY
Translation stage, 1-12 be test pcb board (including device hardware test cell) used by device, 1-13 be observing and controlling meter
Calculation machine.
Concrete annexation is as follows:
Annexation: wherein, 1-1 is that (laser pulse width is adjustable, and scope is femtosecond fs, psec ps for pulse laser
And nanosecond ns magnitude), 1-2 be laser energy regulation unit, 1-3 be laser energy beam splitting arrangement, 1-4 be laser
Energy meter, 1-5 autofocus system, 1-6 be colorful CCD camera, 1-7 be that microscope, 1-8 are for automatically focusing on
Unit, 1-9 be automatic focusing objective len, 1-10 be measured device, 1-11 be XY translation stage, 1-12 be test device
Pcb board (including device hardware test cell), 1-13 used are Measurement &control computer, and 1-14 is that measured device is surveyed
Examination control system.
Embodiment 1
Pul sed laser simulation HM62V16100i Single event upset effecf test, its pilot system figure as shown in Figure 1:
1-1 is pulse laser (laser pulse width is adjustable, scope is femtosecond fs, psec ps and nanosecond ns magnitude), 1-2
Regulate unit for laser energy, 1-3 is laser energy beam splitting arrangement, 1-4 is that laser energy meter, 1-5 focus on system automatically
System, 1-6 be colorful CCD camera, 1-7 be microscope, 1-8 be automatic focusing unit, 1-9 be automatic conglomeration
Mirror, 1-10 be measured device, 1-11 be XY translation stage, 1-12 be that test pcb board used by device (includes device
Part hardware testing unit), 1-13 be Measurement &control computer, 1-14 is measured device test control system；2-1 is laser
Energy (nJ), 2-2 are laser spot diameter (μm)；
3-1 be Chip-wide, 3-2 be laser facula, one functional unit width Delta of 3-3 chipx, 3-4 be one merit of chip
Can element length Δy, 3-5 be spot diameter；4-1 is laser energy (nJ), 4-2 conventional laser method of testing is surveyed
σ～E cross section curve, 4-3 are surveyed σ～E cross section curve by heavy ion, 4-4 is surveyed σ～E cross section song by the present invention
Line, 4-5 are upset cross section value (unit (cm2/bit)。
Measurement σ～E using above-mentioned component units to provide overturns curved section method particularly includes:
(1) HM62V16100i is opened back encapsulation process and carries out unit for electrical property parameters and functional parameter is carried out
Test, normal work just can be tested, and selects 3 pieces of prints, numbering 1,2,3；
(2) to select the device of numbered 1 to be welded on as on its pcb board designed during test, PCB is by turning
Connect and be fixed on an XY three-dimensional precise mobile station (precision is up to 0.1 μm～1 μm), and ensure PCB and mobile station
Can move simultaneously, and pcb board is connected with Measurement &control computer.Device is placed on translation stage, and Z axis is put down at XY
There is certain flatness in face, utilizes Measurement &control computer to implement monitoring laser focusing on device back silicon substrate,
Automatically focusing unit makes laser in device surface difference in height less than 5 μm, reaches this and requires that guarantee laser hangs down
During straight irradiation, energy is evenly distributed at device inside；
(3) determine irradiation scan start point, according to the fluence of heavy ion, arrange laser fluence (parameter include X,
Y-axis translational speed, laser frequency), utilize the primary power of 1nJ that the device of normal work is tested, until
Record device turn threshold ENERGY E0With upset number and saturated upset cross section inversion energy EsWith upset number；
(4) E is selected after completing0、Es、E0And EsBetween 3 energy, 5 energy values altogether, test hot spot
The relation such as table 1 of diameter, the spot diameter size recorded and energy, draw to obtain Fig. 2；
Table 1 spot diameter size and the relation of energy
(5) big with the individual feature cellar area of device by the selected laser facula size for 5 energy of test
Little ratio, such as Fig. 3, determines the relation such as table 2 of laser fluence, laser fluence and energy；
Table 2 laser fluence and energy relationship
| Laser energy (nJ) | Laser fluence (cm-2) |
| 5 | 6.3×106 |
| 10 | 4×106 |
| 15 | 2.8×106 |
| 20 | 2.8×106 |
| 30 | 2.8×106 |
(6) 5 upset cross section recorded the results are shown in Table 3, and laser single-particle σ～E overturns curved section such as Fig. 4.
In order to contrast, putting in table 3 by heavy ion, conventional laser method of testing surveyed cross section result, σ～E overturns curve
Cross section is put in the diagram；
Table 3 distinct methods records HM62V16100i upset cross section test result
(7), after having tested, close pulse laser single particle effect simulated test facility, and device carried out power-off,
Turn off Single event upset effecf test system；
(8) device SEU cross section will be obtained and σ～E curve will substitute into and estimates device at different track spaces
In upset number of times software, assess the applicable orbit altitude of this device.
It should be noted that the embodiment of present invention described above and and unrestricted.Those skilled in the art
Should be appreciated that any technical solution of the present invention is revised or be equal to replacement without departure from technical solution of the present invention
Spirit and scope, it all should be contained in scope of the presently claimed invention.
Claims (6)
1. the method optimizing pulse laser number, the method is used for optimizing pulse laser test device single-particle
The pulse laser number of upset cross section, described method comprises the steps of；
For a certain laser energy Ei, pulse laser number F of optimization uses following steps to determine:
Step 101) obtain the facula area τ under this laser energy and device individual feature cellar area Δ；
Step 102) obtain laser number judgement reference value, this judgement reference value is above-mentioned facula area τ and device list
The ratio of individual functional unit area Δ；
Step 103) when adjudicating reference value more than 1, described laser number determines according to facula area size；When sentencing
When certainly reference value is less than 1, described laser number determines according to individual feature cellar area；
Described step 103) particularly as follows:
When adjudicating reference value n more than 1, described laser number F=1/k τ；When n is less than 1, described laser
Number F=1/k Δ, wherein k is modulation factor, and its span is 1-25.
2. the SEU cross section test side of the method optimizing pulse laser number according to claim 1
Method, it is characterised in that described SEU cross section method of testing uses equation below to obtain Single event upset effecf
Cross section:
Wherein, N is single-particle inversion number of times, and F is to optimize the pulse laser number obtained, and M is that device stores position
Number, S is the radiation exposed area of device, σiUpset cross section for i & lt test.
The SEU cross section method of testing of the method for optimization pulse laser number the most according to claim 2,
It is characterized in that, described SEU cross section method of testing specifically comprises the steps of:
(1) tested device sample is chosen；
(2) being welded on pcb board by device example, described pcb board is fixed on an XY precision by switching
Mobile station, and ensure that PCB moves with precision translation stages simultaneously；
(3) unbalanced pulse laser radiation source, sets laser scanning frequency, is focused selected laser also
Determine the starting point that laser scans at device irradiation；
(4) the initial laser ENERGY E of test is chosen0, and the laser facula area after focusing on when recording this energy is big
Little τ0, according to τ0Determine pulse laser number F with the size Δ of device example, add up single-particle inversion number N, according to
Above-mentioned parameter τ0, F and N value obtain corresponding to ENERGY E0Upset cross section σ0；
Continue to increase laser energy, until recording ENERGY E when device example upset cross section is not further added bys, and record
Laser facula size τ after focusing on during this energys, according to τsPulse laser is determined with the size Δ of device example
Number F, simultaneously statistics single-particle inversion number N, according to above-mentioned parameter τ0, F and N value obtain corresponding to ENERGY EsTime
Upset cross section σs；
Finally, at above-mentioned E0To EsBetween turning over when selecting the energy value of at least 3 to repeat each energy value of above-mentioned acquisition
Turn cross-sectional sizes；
(5) draw upset cross section σ～E curve according to the result of upper step, complete device in the case of different laser energy
SEU cross section curve.
The SEU cross section method of testing of the method for optimization pulse laser number the most according to claim 3,
It is characterized in that, also comprise after described step (5):
(6) close pulse laser single particle effect simulated test facility, and device is carried out power-off, turn off single-particle
Upset effect test system；
(7) device SEU cross section will be obtained and σ～E curve will substitute into and estimates device in different track spaces
Upset number of times software, assess the applicable orbit altitude of this device.
The SEU cross section method of testing of the method for optimization pulse laser number the most according to claim 3,
It is characterized in that, described step (1) comprises further:
Sample is opened encapsulation process, and including front and Kaifeng, the back dress of device, device surface metal level is more than 3
The device of layer, only carries out Kaifeng, back；
After the dress of Kaifeng, unit for electrical property parameters and functional parameter to device are tested, and choose the device that can normally work
Part sample is tested, and wherein for the print chosen with a device example no less than 3, and carries out print
Numbering.
The SEU cross section test side of the method for optimization pulse laser number the most according to claim 5
Method, it is characterised in that also comprise between described step (2) and step (3):
After device has been placed, electricity on which, and utilize single-particle inversion test system to be electrically connected test, inspection
Survey device and test system the most normally works.
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| CN105445640B (en) * | 2015-11-24 | 2018-05-08 | 北京时代民芯科技有限公司 | The single-particle sensitiveness decision method of different instruction set based on pulse laser equipment |
| CN105548770B (en) * | 2016-01-19 | 2018-07-20 | 工业和信息化部电子第五研究所 | A kind of equivalent LET value calculating methods of the pulse laser of SOI device |
| CN105510809B (en) * | 2016-01-26 | 2018-07-20 | 工业和信息化部电子第五研究所 | Pul sed laser simulation single particle experiment system and method |
| CN109212398A (en) * | 2017-07-01 | 2019-01-15 | 微龛（北京）半导体科技有限公司 | A kind of method of parasitical bipolar transistor effect amplification coefficient caused by measurement single particle effect |
| CN108181521A (en) * | 2017-11-29 | 2018-06-19 | 上海精密计量测试研究所 | For the equipment and detection method of the detection of cmos image sensor single particle effect |
| CN109509507B (en) * | 2018-11-02 | 2021-01-05 | 中国科学院上海微系统与信息技术研究所 | Test circuit, test system and method for single event upset of SRAM (static random Access memory) storage unit |
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