CN108181521A - For the equipment and detection method of the detection of cmos image sensor single particle effect - Google Patents
For the equipment and detection method of the detection of cmos image sensor single particle effect Download PDFInfo
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- CN108181521A CN108181521A CN201711226250.7A CN201711226250A CN108181521A CN 108181521 A CN108181521 A CN 108181521A CN 201711226250 A CN201711226250 A CN 201711226250A CN 108181521 A CN108181521 A CN 108181521A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The present invention provides a kind of equipment and detection method for the detection of cmos image sensor single particle effect, the present invention is tested using pulse laser single-particle microbeam, and different function module can be accurately positioned.According to element layout process structure, to cmos image sensor difference sub-circuit point by point scanning, image abnormity form of expression during single particle effect occurs for monitoring in real time, record, recognition means different zones, single particle effect abnormal image feature database is obtained, establishes cmos image sensor single particle effect characterization technique；The present invention realizes identifies different cmos image sensor single particle effects in real time online, can on-line real-time measuremen cmos image sensor single-ion transient state, single-particle inversion, single event function interrupt and locking single particle；The achievable image real non-destructive transmission of the present invention, solution image is in transmission process the problems such as such as noise jamming, card screen.
Description
Technical field
The present invention relates to a kind of equipment and detection method for the detection of cmos image sensor single particle effect.
Background technology
The single particle effect of cmos image sensor mainly has single-particle inversion, single-ion transient state, single event function interrupt
And locking single particle.Cmos image sensor single-chip integration light absorption, opto-electronic conversion, charge transmission and signal processing etc. are different
Function microstructrue, internal to have few sub and how sub- device simultaneously, operation principle includes optics, electricity process, single particle effect
The form of expression is different from other integrated circuits, due to lacking single particle experiment data, at present to the single particle effect form of expression, damage
Hinder the understanding of mechanism still not comprehensively so that anti-single particle performance and the space application of cmos image sensor, which face, many newly asks
Topic.Cmos image sensor single particle effect is the key factor for restricting its space application.Pixel unit is to single particle effect
Sensitivity is more than general digital circuit, and the form of expression, failure mode and the large scale integrated circuit of single particle effect have very
Big difference, existing single particle effect physical model and Influencing Mechanism are faced with new challenges.
The equipment for developing the detection of cmos image sensor single particle effect establishes the inspection of cmos image sensor single particle effect
Survey method has the foundation of cmos image sensor single particle effect ground simulation experiment method and assessment technology and testing standard
There is important directive function, the development for reinforcing cmos imaging technology special to aerospace has far-reaching scientific meaning.
The hickie that existing method and device are generated only for cmos image sensor single-ion transient state effect is detected, nothing
Method carries out real time discriminating to effects such as locking single particle caused by heavy ion irradiation, single-particle inversion, single event function interrupts, because
This detection device and and method only influence of the single-ion transient state for the pixel of imaging sensor is monitored and can not expired
The type selecting of sufficient space flight model, it is impossible to for objective evaluation cmos image sensor caused single-particle lock after by heavy ion irradiation
The effects such as fixed, single-particle inversion, single event function interrupt.
Invention content
The purpose of the present invention is to provide a kind of equipment for the detection of cmos image sensor single particle effect and detections
Method can solve existing detection device and method and only influence of the single-ion transient state for the pixel of imaging sensor is carried out
Monitoring can not meet the type selecting of space flight model, it is impossible to caused after by heavy ion irradiation for objective evaluation cmos image sensor
The problem of effects such as locking single particle, single-particle inversion, single event function interrupt.
To solve the above problems, the present invention provides a kind of equipment for the detection of cmos image sensor single particle effect,
Including：
Including image capture module, circuit board, programmable power supply, router, main control computer and remote control computer are irradiated,
In,
Image capture module is placed in irradiation chamber, is used to implement cmos image sensor power supply control, Image Acquisition, real non-destructive
Transmission；
Main control computer is placed in experiment hall, controls the programmable power supply for passing through upper computer software, realizes that electric current is remembered in real time
Record and current-limiting protection, in the case where locking single particle causes source current to increase suddenly, have the function of autonomous power-off restoration, have
Cmos image sensor exports image real-time storage function；
The remote control computer is placed in test hall, is communicated by the router with main control computer, and there is image to exist
The function that line monitoring, change device operating mode and function interruption are restarted online.
Further, in above equipment, the operating mode includes time for exposure and working frame frequency.
Another side according to the present invention provides one kind for cmos image sensor single particle effect detection method, using such as power
Profit requires the equipment for the detection of cmos image sensor single particle effect described in 1 or 2, the method includes：
Test specimen is placed on X-Y platform, which can be with three-dimensional regulation, and minimum movement step-length is 0.125 micron, so as to
Make laser micro irradiation to the specific region of device；
Preset wavelength and laser energy are selected, determines beam spot diameter,；
Scanning area is determined according to element layout, to cmos image sensor device difference sub-circuit point by point scanning；
To ion incidence each time, all recording power transient current and incoming position, to differentiate which region to locking single particle
It is sensitive；
Device continuous imaging during experiment, real time on-line monitoring；
Image abnormity table during single particle effect occurs for zygote circuit operation principle and function, identification, memory device different zones
Existing form, obtains single particle effect abnormal image feature database, establishes cmos image sensor single particle effect test characterization technique,
For the different cmos image sensor single particle effect of on-line real-time measuremen, realization is accurately identified, is judged, positioning single-particle effect
The sensitive position that should be generated, determine inside cmos image sensor different circuit micro-structures occur the single particle effect forms of expression,
Failure mode.
Further, in the above-mentioned methods, the cmos image sensor single particle effect includes single-ion transient state, simple grain
Son overturning, single event function interrupt and locking single particle.
Further, in the above-mentioned methods, single-ion transient state is mainly shown as in output image containing the multiple pixels of covering
Speck, using illiciumverum connection, edge-detected image processing method, statistics speck covering pixel quantity, signal charge number, speck
Distribution characteristics establishes single-ion transient state on-line checking analytical technology.In order to obtain cmos image sensor single particle effect rule
With LET threshold values, the section that single particle effect occurs, carry out different LET values heavy ion irradiation experiments；
Sample is placed in vacuum tank, installation, debugging cmos image sensor single particle effect detection device；Predose carries out
The initial value test of sample, it is ensured that test specimen can work normally；
It determines that sample and support circuit are sent into radiation chamber after system is normal；
Operating voltage is added to carry out predose energization test, it is ensured that power supply and sequential are accurate, enable the device to normally go out
Scheme, adopt figure；
Irradiation sample is placed on precalculated position, while removes device glass lid；
Close the irradiation all light units in the Room, it is ensured that device is placed in darkroom；Carry out heavy ion irradiation experiment；
Carry out heavy ion irradiation experiment, real-time recording power electric current during experiment, to discriminate whether to occur locking single particle, examination
Device continuous imaging during testing, on-line monitoring output image；
Image processing software identifies, stores abnormal image, and compare with abnormal image feature database in real time, determines that particle effect occurs
Type；
Change particle incident angle, device time for exposure, working frame frequency, study cmos image sensor single particle effect key shadow
The factor of sound.
Further, in the above-mentioned methods, single-particle inversion be mainly shown as row are abnormal, row is abnormal, entire image is abnormal,
Export image flower screen；Image processing software is write, signature analysis and statistics is carried out for these different abnormal outputs, establishes different
Online examination single particle effect real-time is realized in normal characteristics of image library.
Further, in the above-mentioned methods, single event function interrupt and locking single particle cause cmos image sensor into
As function is interrupted, and locking single particle causes electric current to increase suddenly；Programmable power supply is controlled to realize that electric current is online by upper computer software
Monitoring and storage if steep increasing occurs in electric current, are powered off, so as to protect cmos image sensor and drive by trigger protection current threshold
Dynamic circuit, and integrated on software and restart reset function online.
Compared with prior art, the present invention is tested using pulse laser single-particle microbeam, and different work(can be accurately positioned
It can module.According to element layout process structure, to cmos image sensor difference sub-circuit point by point scanning, monitoring in real time, record,
Image abnormity form of expression during single particle effect occurs for recognition means different zones, obtains single particle effect abnormal image feature
Cmos image sensor single particle effect characterization technique is established in library；
The present invention uses and identifies different cmos image sensor single particle effects in real time online.It can on-line real-time measuremen CMOS figures
As the single-ion transient state of sensor, single-particle inversion, single event function interrupt and locking single particle；
The present invention is using the transmission of image real non-destructive is solved, and image is in transmission process the problems such as such as noise jamming, card screen.
Description of the drawings
Fig. 1 is cmos image sensor single particle effect on-line detecting system block diagram of the present invention；
Fig. 2 levies technology for cmos image sensor list particle effect of the present invention and establishes process schematic；
Fig. 3 is heavy ion irradiation experiment process figure of the present invention；
Fig. 4 a are the abnormal image that the heavy ion irradiation that present invention detection captures causes single-ion transient state；
Fig. 4 b are the enlarged drawing that white irises out part in 4a；
Fig. 5 analyzes single-ion transient state 3 dimensional drawing for the present invention using image processing methods such as octagonal connection, edge detections；
Fig. 6 is the abnormal image that the heavy ion irradiation that present invention detection captures causes single-particle inversion.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
As shown in Figure 1, the present invention provides a kind of equipment for the detection of cmos image sensor single particle effect, including figure
As acquisition module, irradiation circuit board, programmable power supply, router, main control computer and remote control computer, wherein,
Image capture module is placed in irradiation chamber, is used to implement cmos image sensor power supply control, Image Acquisition, real non-destructive
The functions such as transmission；
Main control computer is placed in experiment hall, controls the programmable power supply for passing through upper computer software, realizes that electric current is remembered in real time
Record and current-limiting protection function, in the case where locking single particle causes source current to increase suddenly, have the function of autonomous power-off restoration, main
Control computer has the function of that cmos image sensor exports image real-time storage；
The remote control computer is placed in test hall, is communicated by the router with main control computer, and there is image to exist
Line monitoring changes device operating mode（Time for exposure, working frame frequency）It is interrupted with function and restarts etc. functions online, solved image and exist
In transmission process the problems such as such as noise jamming, card screen.
The equipment of the present invention can the different cmos image sensor single particle effect of on-line real-time measuremen, it is main include it is single
Particle transient state, single-particle inversion, single event function interrupt and locking single particle, realization are accurately identified, are judged, positioning single-particle effect
The sensitive position that should be generated, determine inside cmos image sensor different circuit micro-structures occur the single particle effect forms of expression,
Failure mode.
Single-ion transient state is mainly shown as in output image containing the speck for covering multiple pixels, using illiciumverum connection, side
The image processing methods such as edge detection, the features such as statistics speck covering pixel quantity, signal charge number, speck distribution, establish simple grain
Sub- transient state on-line checking analytical technology.
Single-particle inversion is mainly shown as the different manifestations such as row are abnormal, row is abnormal, entire image is abnormal, output image flower screen
Form.Image processing software is write, signature analysis and statistics is carried out for these different abnormal outputs, establishes abnormal image spy
Library is levied, realizes online examination single particle effect real-time.
Single event function interrupt and locking single particle cause cmos image sensor imaging function to interrupt, and single-particle is locked
Surely electric current is caused to increase suddenly, easily burns device.Programmable power supply is controlled to realize electric current on-line monitoring and storage by upper computer software, if
There is steep increasing in electric current, is powered off by trigger protection current threshold, so as to protect cmos image sensor and driving circuit.And soft
It is integrated on part and restarts reset function online.
Above equipment can be utilized according to element layout process structure, it is right using the experiment of pulse laser single-particle microbeam
The single chip integrated pixel internal storage storage structure of cmos image sensor and transfer organization, row select register, column selection register, sequential to post
Storage, phaselocked loop, correlated double sampling circuit, programmable amplifier, ADC carry out point by point scanning, are worked according to different sub-circuits former
Reason and function analyze output abnormality picture failure pattern, accurately identify, judge, the sensitive position that orientation effect generates, providing
The single particle effect form of expression, failure mode occur for cmos image sensor difference circuit micro-structure.
It is as shown in Figure 1 a kind of equipment block diagram for the detection of cmos image sensor single particle effect of the present invention.By scheming
Understand the detection device of the present invention mainly by image capture module, irradiation circuit board, programmable power supply, router, main control computer
It is formed with remote control computer.Image capture module is placed in irradiation chamber, main realization cmos image sensor power supply control,
The functions such as Image Acquisition, real non-destructive transmission；Main control computer is placed in experiment hall, and program-controlled electric is controlled by upper computer software
Electric current record and current-limiting protection function in real time are realized in source.In the case where locking single particle causes source current to increase suddenly, have certainly
Main power-off restoration function.In addition, main control computer has the function of cmos image sensor image real-time storage；Remote control calculates
Machine is placed in test hall, is communicated by router with main control computer, has image on-line monitoring, changes device operating mode
（Time for exposure, working frame frequency）It is interrupted with function and restarts etc. functions online.
Fig. 2 gives cmos image sensor list particle effect characterization technique and establishes process schematic.It is ground using above-mentioned
The detection device of system carries out the pulse laser microbeam experiment of cmos image sensor difference sub-circuit.Test specimen is placed on
On X-Y platform, which can be with three-dimensional regulation, and minimum movement step-length is 0.125 micron, so as to make laser micro irradiation to device
Specific region；Suitable wavelength and laser energy are selected, determines beam spot diameter,（1.8-3 micron）；It is determined according to element layout
Scanning area, to cmos image sensor device difference sub-circuit point by point scanning；To ion incidence each time, all recording power wink
State electric current and incoming position, to differentiate which region to locking single particle sensitivity；Device continuous imaging during experiment, exists in real time
Line monitors；Image abnormity during single particle effect occurs for zygote circuit operation principle and function, identification, memory device different zones
The form of expression obtains single particle effect abnormal image feature database, establishes cmos image sensor single particle effect test characterization skill
Art.
Fig. 3 gives heavy ion irradiation experiment process figure.Heavy ion irradiation is tested in China Atomic Energy Science Research Institute
It is carried out on HI-13 swindletrons；In order to obtain cmos image sensor single particle effect rule and single-particle effect occur
The LET threshold values answered, section are chosen19F、28Si、35Cl、48Ti、74Five kinds of particles of Ge, corresponding LET values are 4.33 respectively, 9.6,
13.9、22.6、37.2MeV•cm2/mg；Sample is placed in vacuum tank, installation, debugging cmos image sensor single particle effect
Detection device；Predose carries out the initial value test of sample, it is ensured that test specimen can work normally；Determine that system will after normal
Sample and support circuit are sent into radiation chamber；Operating voltage is added to carry out predose energization test, it is ensured that power supply and sequential are accurate
It is errorless, it enables the device to normally go out figure, adopt figure；Irradiation sample is placed on precalculated position, while removes device glass lid；Close spoke
According to all light units in the Room, it is ensured that device is placed in darkroom；Carry out heavy ion irradiation experiment.Carry out heavy ion irradiation experiment, examination
Real-time recording power electric current during testing, to discriminate whether that locking single particle occurs；Device continuous imaging during experiment, online
Monitoring output image；Image processing software identifies, stores abnormal image, and compare with abnormal image feature database in real time, determines hair
Raw particle effect type；Change particle incident angle, device time for exposure, working frame frequency, study cmos image sensor simple grain
Sub- effect key influence factor.
Fig. 4 a and 4b is carry out heavy ion irradiation on the HI-13 swindletrons of China Atomic Energy Science Research Institute
Abnormal image during single-ion transient state occurs for the cmos image sensor that equipment and detection method using the present invention capture during experiment；
The detection method that Fig. 5 is the present invention analyzes single-ion transient state three using image processing methods such as octagonal connection, edge detections
Tie up stereogram；
Fig. 6 is to be adopted when carrying out heavy ion irradiation experiment on the HI-13 swindletrons of China Atomic Energy Science Research Institute
Abnormal image during single-particle inversion occurs for the cmos image sensor captured with the equipment and detection method of the present invention.
The present invention has the beneficial effect that compared with prior art：
The present invention is tested using pulse laser single-particle microbeam, and different function module can be accurately positioned.According to element layout
Process structure, to cmos image sensor difference sub-circuit point by point scanning, monitoring in real time, record, recognition means different zones hair
Image abnormity form of expression during raw single particle effect obtains single particle effect abnormal image feature database, establishes cmos image sensing
Device single particle effect characterization technique；
The present invention realizes identifies different cmos image sensor single particle effects in real time online.It can on-line real-time measuremen CMOS
Single-ion transient state, single-particle inversion, single event function interrupt and the locking single particle of imaging sensor；
The present invention is using the transmission of image real non-destructive is solved, and image is in transmission process the problems such as such as noise jamming, card screen.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with other
The difference of embodiment, just to refer each other for identical similar portion between each embodiment.
Professional further appreciates that, with reference to each exemplary unit of the embodiments described herein description
And algorithm steps, can be realized with the combination of electronic hardware, computer software or the two, in order to clearly demonstrate hardware and
The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These
Function is performed actually with hardware or software mode, specific application and design constraint depending on technical solution.Profession
Technical staff can realize described function to each specific application using distinct methods, but this realization should not
Think beyond the scope of this invention.
Obviously, those skilled in the art can carry out invention spirit of the various modification and variations without departing from the present invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the present invention is also intended to including these modification and variations.
Claims (7)
1. it is a kind of for cmos image sensor single particle effect detection equipment, which is characterized in that including image capture module,
Circuit board, programmable power supply, router, main control computer and remote control computer are irradiated, wherein,
Image capture module is placed in irradiation chamber, is used to implement cmos image sensor power supply control, Image Acquisition, real non-destructive
Transmission；
Main control computer is placed in experiment hall, and the programmable power supply is controlled by upper computer software, realize electric current in real time record and
Current-limiting protection in the case where locking single particle causes source current to increase suddenly, has the function of autonomous power-off restoration, has CMOS figures
As sensor exports image real-time storage function；
The remote control computer is placed in test hall, is communicated by the router with main control computer, and there is image to exist
The function that line monitoring, change device operating mode and function interruption are restarted online.
2. as described in claim 1 for the equipment of cmos image sensor single particle effect detection, which is characterized in that described
Operating mode includes time for exposure and working frame frequency.
3. one kind is used for cmos image sensor single particle effect detection method, which is characterized in that using such as claims 1 or 2
The equipment for the detection of cmos image sensor single particle effect, the method includes：
Test specimen is placed on X-Y platform, which can be with three-dimensional regulation, and minimum movement step-length is 0.125 micron, so as to
Make laser micro irradiation to the specific region of device；
Preset wavelength and laser energy are selected, determines beam spot diameter,；
Scanning area is determined according to element layout, to cmos image sensor device difference sub-circuit point by point scanning；
To ion incidence each time, all recording power transient current and incoming position, to differentiate which region to locking single particle
It is sensitive；
Device continuous imaging during experiment, real time on-line monitoring；
Image abnormity table during single particle effect occurs for zygote circuit operation principle and function, identification, memory device different zones
Existing form, obtains single particle effect abnormal image feature database, establishes cmos image sensor single particle effect test characterization technique,
For the different cmos image sensor single particle effect of on-line real-time measuremen, realization is accurately identified, is judged, positioning single-particle effect
The sensitive position that should be generated, determine inside cmos image sensor different circuit micro-structures occur the single particle effect forms of expression,
Failure mode.
4. it to be used for cmos image sensor single particle effect detection method as claimed in claim 3, which is characterized in that described
Cmos image sensor single particle effect includes single-ion transient state, single-particle inversion, single event function interrupt and locking single particle.
5. it to be used for cmos image sensor single particle effect detection method as claimed in claim 4, which is characterized in that single-particle
Transient state is mainly shown as in output image containing the speck for covering multiple pixels, using illiciumverum connection, edge-detected image processing
Method, statistics speck covering pixel quantity, signal charge number, speck distribution characteristics, establishes the analysis of single-ion transient state on-line checking
Technology.
6. it to be used for cmos image sensor single particle effect detection method as claimed in claim 4, which is characterized in that single-particle
Overturning is mainly shown as that row are abnormal, row is abnormal, entire image is abnormal, output image flower screen；Image processing software is write, for this
A little different abnormal output progress signature analysis and statistics, establish abnormal image feature database, realization is online to screen list real-time
Particle effect.
7. it to be used for cmos image sensor single particle effect detection method as claimed in claim 4, which is characterized in that single-particle
Function is interrupted and locking single particle causes cmos image sensor imaging function to interrupt, and locking single particle causes electric current steep
Increase；Programmable power supply is controlled to realize electric current on-line monitoring and storage by upper computer software, increase if electric current appearance is steep, protected by triggering
Current threshold power-off is protected, so as to protect cmos image sensor and driving circuit, and is integrated on software and restarts reset work(online
Energy.
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| CN109116149A (en) * | 2018-07-27 | 2019-01-01 | 陕西夸克自控科技有限公司 | A kind of laser mapping device of device SEE weak spot |
| CN110361618A (en) * | 2019-08-07 | 2019-10-22 | 中国科学院新疆理化技术研究所 | One kind being used for cmos image sensor single event latch-up effect test method |
| CN110470968A (en) * | 2019-07-15 | 2019-11-19 | 中国科学院国家空间科学中心 | A kind of device single particle effect weak spot mapping screening device and method |
| CN111123062A (en) * | 2019-12-26 | 2020-05-08 | 兰州空间技术物理研究所 | Test method for simulating single particle effect test based on femtosecond pulse laser |
| CN111220867A (en) * | 2020-01-15 | 2020-06-02 | 中国科学院新疆理化技术研究所 | Method for testing single event upset effect of CMOS image sensor |
| CN114189397A (en) * | 2021-12-10 | 2022-03-15 | 重庆两江卫星移动通信有限公司 | Ethernet interface circuit single event effect detection and correction device and method |
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| CN114189397A (en) * | 2021-12-10 | 2022-03-15 | 重庆两江卫星移动通信有限公司 | Ethernet interface circuit single event effect detection and correction device and method |
| CN114189397B (en) * | 2021-12-10 | 2024-03-19 | 重庆两江卫星移动通信有限公司 | Device and method for detecting and correcting single event effect of Ethernet interface circuit |
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