CN110361618A - One kind being used for cmos image sensor single event latch-up effect test method - Google Patents
One kind being used for cmos image sensor single event latch-up effect test method Download PDFInfo
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- CN110361618A CN110361618A CN201910724249.XA CN201910724249A CN110361618A CN 110361618 A CN110361618 A CN 110361618A CN 201910724249 A CN201910724249 A CN 201910724249A CN 110361618 A CN110361618 A CN 110361618A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The present invention provides one kind to be used for cmos image sensor single event latch-up effect test method, this method is made of the test macro for being tested cmos image sensor, cmos image sensor test board, FPGA, PC machine, Current Voltage monitoring board and power supply, the method can be realized the single-particle sensibility of assessment cmos image sensor difference circuit module, and the concrete reason of latch occurs from circuit level analysis；In ground simulation space environment irradiation test, online real time collecting difference circuit unit Current Voltage value, while acquiring darkfield image；According to the darkfield image obtained when latch occurs and the variation of different circuit unit Current Voltages, the specific location and circuit module of single event latch-up occur for analysis；Strong real-time of the present invention; method is simple and quick; cmos image sensor single event latch-up effect can be monitored in real time, while can still restore to work normally after protecting cmos image sensor that latch occurs, more the circuit module of accurate positionin cmos image sensor generation single event latch-up.
Description
Technical field
The present invention relates to whether radiation effect detection technical fields, are related to a kind of for cmos image sensor simple grain
Sub- latch effect test method.
Background technique
It compares with charge coupled device, cmos image sensor has the advantages that integrated level is high, speed is fast, low-power consumption.And
And in recent years, fast-developing cmos image sensor production technology has greatly improved the property of cmos image sensor
Can, allow to compare charge coupled device (CCD) imaging sensor.Because of these advantages, the image based on CMOS manufacturing process
Sensor has been applied in space field, is related to star sensor, remotely sensed image and earth observation etc..
For cmos image sensor in space application, proton, neutron and heavy ion in space will lead to cmos image biography
Single event latch-up occurs for sensor, its cisco unity malfunction is caused when serious.Therefore need to develop highly resistance single event latch-up
Cmos image sensor, this just needs to carry out single event latch-up test on ground simulation space radiation environment device, finds out device
Part single event latch-up sensitive blocks, to targetedly carry out consolidation process.It is existing to be directed to cmos image sensor simple grain
Sub- latched test method, mainly by detection cmos image sensor total current variation, this method can evaluate CMOS
Imaging sensor is integrally to single event latch-up sensibility, the disadvantage is that can not be sensitive specific to a certain circuit unit single event latch-up
Property, and the reason of latch occurs can not be analyzed from circuit level.A kind of cmos image sensor single-particle proposed in this paper
Latch-up test and analysis method can be realized the single-particle sensibility of assessment cmos image sensor difference circuit module, from
The concrete reason of circuit level analysis generation latch.In ground simulation space environment irradiation test, online real time collecting is different
Circuit unit Current Voltage value, while acquiring darkfield image.According to the darkfield image and different circuit lists obtained when latch occurs
The specific location and circuit module of single event latch-up occur for elementary current voltage change, analysis, are that cmos image sensor is anti-radiation
Design provides theoretical direction.When using ground simulation space radiation environment device research electronic component single particle effect,
Cmos image sensor is located in radiation chamber, and tester needs remotely to be controlled outside, the work of real-time monitoring device
Situation needs to power off immediately when single event latch-up occurs, and can prevent from damaging because electric current is excessive in this way.The test method energy
It is enough to realize that system automatic remote powers off and restart device when latch occurs, it in this way can be with effective protection circuit.
Summary of the invention
It is an object of the present invention to studying cmos image sensor simple grain using ground simulation space radiation environment device
When sub- latch-up, all modular circuit electric currents of real time on-line monitoring cmos image sensor simultaneously acquire darkfield image, provide one
Kind is used for cmos image sensor single event latch-up effect test method, and this method is by being tested cmos image sensor, CMOS
Imaging sensor test board, FPGA, PC machine, the test macro of Current Voltage monitoring board and power supply composition, will connect CMOS figure
As sensor test board adopts figure by cameralink in real time and be transferred to the end PC core so that cmos image sensor works normally
On piece imaging software, then cmos image sensor modules current threshold is set, existed in real time by Current Voltage monitoring board
Line monitors cmos image sensor modules Current Voltage, including analog circuit, digital circuit, interface circuit, analog-to-digital conversion
Circuit and PLL circuit module；The current and voltage data of monitoring turns USB line by serial ports and is transferred to Current Voltage monitoring of software on PC
On, it is presented in the form of number and two kinds of image by software realization Current Voltage.When monitoring circuit variation, Current Voltage is soft
Part sends the long-range control of instruction by the end PC serial ports and closes power supply, while saving this single event latch-up and front and back full current occurs
Voltage data.After having saved current and voltage data, this single event latch-up front and back online acquisition darkfield image is saved to independent text
Part folder.After all data save, Current Voltage software sends the long-range control of instruction by the end PC serial ports and opens power supply, again
Start to irradiate.After irradiation test, according to the online acquisition cmos image sensor modules current and voltage data and door bolt saved
Characteristics of image is locked, and combines the sensitive circuit module and generation of CMOS image sensor structure characteristic analysis generation single event latch-up
Reason provides theoretical direction for cmos image sensor radiation-hardened design.
Of the present invention a kind of for cmos image sensor single event latch-up effect test method, this method is by quilt
Survey the test system of cmos image sensor, cmos image sensor test board, FPGA, PC machine, Current Voltage monitoring board and power supply
System composition, concrete operations follow these steps to carry out:
A, cmos image sensor test board is installed first, so that cmos image sensor works normally, adopts figure in real time
It is transferred on the chip imaging software of PC machine end by cameralink；
B, cmos image sensor modules current threshold is set, and threshold selection is 1.2 times of normal current value；
C, pass through Current Voltage monitoring board real time on-line monitoring cmos image sensor modules Current Voltage, including mould
Quasi- circuit, digital circuit, interface circuit, analog to digital conversion circuit and PLL circuit module；
D, the current and voltage data of monitoring turns USB line by serial ports and is transferred in PC machine on Current Voltage monitoring of software, leads to
Overcurrent voltage monitoring software realization Current Voltage is presented in the form of number and two kinds of curve；
E, when monitoring circuit variation, Current Voltage software sends the long-range control of instruction by PC machine end serial ports and closes electricity
Source, while saving this single event latch-up and front and back full current voltage data occurs；
F, after having saved current and voltage data, this single event latch-up front and back online acquisition darkfield image is saved to a list
Only file；
G, then Current Voltage software sends the long-range control of instruction by PC machine end serial ports and opens power supply, restarts to irradiate
It monitors latching event and returns to Step d if occurring latch again, otherwise when irradiation fluence reaches predicted value, terminate test；
H, after irradiation test, according to the online acquisition cmos image sensor modules current and voltage data and door bolt saved
Characteristics of image is locked, and combines the sensitive circuit module and generation of CMOS image sensor structure characteristic analysis generation single event latch-up
Reason provides theoretical direction for cmos image sensor radiation-hardened design.
It is existing to be directed to cmos image sensor single event latch-up test method, mainly pass through detection cmos image sensing
The variation of device total current, this method can evaluate cmos image sensor integrally to single event latch-up sensibility, the disadvantage is that nothing
Method can not analyze the reason of latch occurs specific to a certain circuit unit single event latch-up sensibility from circuit level.
Of the present invention a kind of for cmos image sensor single event latch-up effect test method, this method has the effect that
From circuit level analysis latch occurs for the single-particle sensibility that can be realized assessment cmos image sensor difference circuit module
Concrete reason.In ground simulation space environment irradiation test, online real time collecting difference circuit unit Current Voltage value, simultaneously
Acquire darkfield image.According to the darkfield image obtained when latch occurs and the variation of different circuit unit Current Voltages, analysis occurs
The specific location and circuit module of single event latch-up provide theoretical direction for cmos image sensor radiation-hardened design.
It is of the present invention a kind of for cmos image sensor single event latch-up effect test method, it is suitable for different knots
Structure, the cmos image sensor single event latch-up effect test of different working modes.Strong real-time of the present invention, method are simply fast
Cmos image sensor single event latch-up effect can be monitored in real time in speed, at the same protect cmos image sensor occur latch after
It can still restore to work normally, more the circuit module of accurate positionin cmos image sensor generation single event latch-up.
Therefore the present invention is applicable to assess or the device development of enhancing cmos image sensor capability of resistance to radiation is single
Position, scientific research institutions and space flight load unit use.
Detailed description of the invention
Fig. 1 is a kind of single event latch-up effect measurement system diagram based on cmos image sensor of the present invention.
Fig. 2 be cmos image sensor of the present invention single event latch-up effect test macro irradiation test before scheme
Picture.
Fig. 3 is that the single event latch-up effect test macro current threshold of cmos image sensor of the present invention is set.
Fig. 4 is that the single event latch-up effect test macro Current Voltage of cmos image sensor of the present invention monitors.
Fig. 5 is the single event latch-up effect test macro current monitoring data of cmos image sensor of the present invention.
Fig. 6 is the single event latch-up effect test macro single event latch-up figure of cmos image sensor of the present invention
Picture.
Specific embodiment
Embodiment
Of the present invention a kind of for cmos image sensor single event latch-up effect test method, this method is by quilt
Surveying cmos image sensor, cmos image sensor test board, FPGA, PC machine includes cmos image sensor imaging software and electricity
Galvanic electricity presses the test macro composition of monitoring of software, Current Voltage monitoring board and power supply, and wherein Current Voltage monitoring of software can be real
Existing current and voltage data is presented on host computer in the form of number and two kinds of curve, while can be automatic according to the threshold current of setting
Remote control power switch, concrete operations follow these steps to carry out:
A, cmos image sensor test board is installed first, so that cmos image sensor works normally, adopts figure in real time
As shown in Fig. 2, being transferred on the chip imaging software of PC machine end by cameralink；
B, be arranged cmos image sensor modules current threshold, threshold selection for normal current value 1.2 times of Fig. 3 institutes
Show；
C, pass through Current Voltage monitoring board real time on-line monitoring cmos image sensor modules Current Voltage, including mould
Quasi- circuit, digital circuit, interface circuit, analog to digital conversion circuit and PLL circuit module；
D, the current and voltage data of monitoring turns USB line by serial ports and is transferred in PC machine on Current Voltage monitoring of software, leads to
Overcurrent voltage monitoring software realization Current Voltage is presented in the form of number and two kinds of curve, shown in Fig. 4；
E, when monitoring circuit variation, Current Voltage software sends the long-range control of instruction by PC machine end serial ports and closes electricity
Source, while saving this single event latch-up and front and back full current voltage data occurs, shown in Fig. 5；
F, after having saved current and voltage data, online acquisition darkfield image before and after this single event latch-up is individually saved；
G, then Current Voltage software sends the long-range control of instruction by PC machine end serial ports and opens power supply, restarts to irradiate
It monitors latching event and returns to Step d if occurring latch again, otherwise when irradiation fluence reaches predicted value, terminate test；
H, after irradiation test, according to the online acquisition cmos image sensor modules current and voltage data saved and secretly
Field picture, further the specific location and circuit module of single event latch-up occur for analysis, in conjunction with Current Voltage variation and Abnormal Map
As type, line decoder driving circuit is determined, column adc circuit module is easy as single event latch-up sensitizing range, shown in Fig. 6, survey
Test result provides theoretical direction for cmos image sensor radiation-hardened design.
By carrying out ground simulation space environment irradiation test to cmos image sensor, according to side proposed by the present invention
Method, can obtain the single event latch-up sensibility of cmos image sensor difference circuit unit, and test result shows line decoder
Driving circuit, column adc circuit module are easy to happen single event latch-up, and emphasis is needed to carry out consolidation process.
Claims (1)
1. one kind is used for cmos image sensor single event latch-up effect test method, which is characterized in that this method is by being tested
Cmos image sensor, cmos image sensor test board, FPGA, PC machine, the test macro of Current Voltage monitoring board and power supply
Composition, concrete operations follow these steps to carry out:
A, cmos image sensor test board is installed first, so that cmos image sensor works normally, is adopted figure in real time and is passed through
Cameralink is transferred on the chip imaging software of PC machine end；
B, cmos image sensor modules current threshold is set, and threshold selection is 1.2 times of normal current value；
C, pass through Current Voltage monitoring board real time on-line monitoring cmos image sensor modules Current Voltage, including simulation electricity
Road, digital circuit, interface circuit, analog to digital conversion circuit and PLL circuit module；
D, the current and voltage data of monitoring turns USB line by serial ports and is transferred in PC machine on Current Voltage monitoring of software, passes through electricity
Galvanic electricity presses monitoring of software to realize that Current Voltage is presented in the form of number and two kinds of curve；
E, when monitoring circuit variation, Current Voltage software sends the long-range control of instruction by PC machine end serial ports and closes power supply,
This single event latch-up is saved simultaneously, and front and back full current voltage data occurs；
F, after having saved current and voltage data, online acquisition darkfield image is individually literary to one before and after saving this single event latch-up
Part folder；
G, then Current Voltage software sends the long-range control of instruction by PC machine end serial ports and opens power supply, restarts irradiation monitoring
Latching event；If occurring latch again, Step d is returned to, otherwise when irradiation fluence reaches predicted value, terminates test；
H, after irradiation test, according to the online acquisition cmos image sensor modules current and voltage data and latch figure saved
As feature, and combine CMOS image sensor structure characteristic analysis that the sensitive circuit module of single event latch-up occurs and generates former
Cause.
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| CN201910724249.XA CN110361618A (en) | 2019-08-07 | 2019-08-07 | One kind being used for cmos image sensor single event latch-up effect test method |
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| CN201910724249.XA CN110361618A (en) | 2019-08-07 | 2019-08-07 | One kind being used for cmos image sensor single event latch-up effect test method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111031309A (en) * | 2019-12-26 | 2020-04-17 | 中国科学院长春光学精密机械与物理研究所 | Automatic parameter testing device for large-area array CMOS image sensor |
| CN111220867A (en) * | 2020-01-15 | 2020-06-02 | 中国科学院新疆理化技术研究所 | Method for testing single event upset effect of CMOS image sensor |
| CN112557885A (en) * | 2020-12-09 | 2021-03-26 | 北京时代民芯科技有限公司 | FPGA single event latch-up test system and method based on built-in temperature monitor |
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| JPH11202020A (en) * | 1998-01-13 | 1999-07-30 | Advantest Corp | Latch-up tester |
| CN103645430A (en) * | 2013-12-23 | 2014-03-19 | 中国科学院新疆理化技术研究所 | Stimulation based detection method for SiGe hetero-junction bipolar transistor (HBT) single event effects |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111031309A (en) * | 2019-12-26 | 2020-04-17 | 中国科学院长春光学精密机械与物理研究所 | Automatic parameter testing device for large-area array CMOS image sensor |
| CN111220867A (en) * | 2020-01-15 | 2020-06-02 | 中国科学院新疆理化技术研究所 | Method for testing single event upset effect of CMOS image sensor |
| CN112557885A (en) * | 2020-12-09 | 2021-03-26 | 北京时代民芯科技有限公司 | FPGA single event latch-up test system and method based on built-in temperature monitor |
| CN112557885B (en) * | 2020-12-09 | 2023-08-08 | 北京时代民芯科技有限公司 | FPGA single particle latch-up test system and method based on built-in temperature monitor |
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