CN110470968A - A kind of device single particle effect weak spot mapping screening device and method - Google Patents

A kind of device single particle effect weak spot mapping screening device and method Download PDF

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Publication number
CN110470968A
CN110470968A CN201910634349.3A CN201910634349A CN110470968A CN 110470968 A CN110470968 A CN 110470968A CN 201910634349 A CN201910634349 A CN 201910634349A CN 110470968 A CN110470968 A CN 110470968A
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control
data
submodule
particle
master control
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CN110470968B (en
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朱翔
韩建伟
李悦
马英起
陈睿
上官士鹏
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National Space Science Center of CAS
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National Space Science Center of CAS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/265Contactless testing
    • G01R31/2656Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Abstract

The present invention proposes that a kind of device single particle effect weak spot surveys and draws screening device and method, described device include: upper computer control module (11), single-particle inversion detection components (13), measured device carrier (14), three-dimensional mobile platform (15), controllable pulse laser emitter (16), CCD component (17) and industry control thermomechanical components (12);The upper computer control module (11), for the shift position section of setting and test pattern parameter to be sent to industry control thermomechanical components (12);Shown and drawn also according to industry control thermomechanical components (12) collected fault data, obtain measured device occur single particle effect when sensibility and sensitizing range;The industry control thermomechanical components (12) are sent to single-particle inversion detection components (13) and control three-dimensional mobile platform (15) for forming mobile control instruction according to the parameter for receiving setting;Single-particle inversion status data and ccd image are also uploaded to upper computer control module (11).The present invention can device under test occur single particle effect when physical location and the time carry out mapping examination.

Description

A kind of device single particle effect weak spot mapping screening device and method
Technical field
The present invention relates to space technology and technical field of semiconductors, thin in particular to a kind of device single particle effect Weakness surveys and draws screening device and method.
Background technique
Single particle effect (Single event effect), refers to that high energy charged particles generate in the sensitive volume of device The phenomenon that a large amount of charges.When the sufficiently large particle of energy injects integrated circuit, due to ionisation effect, integrated circuit can generate number The extremely more electron-hole pair of amount, the excess charge of these bursts can cause the failure of semiconductor devices, device made to store bit flipping Or logic level jump leads to single-particle inversion (single event upset) or single event function interrupt (single event Function interrupt), it is serious that cmos device generation high current is made to lead to locking single particle (single event Latch-up), prevention is such as not added, or even makes device permanent damage.
Spacecraft in space flight when, can have been at charged particle composition radiation environment in.Space radiation environment In high energy proton and heavy ion etc. lead to the semiconductor devices in Spacecraft Electronic system single particle effect occur, seriously Influence reliability and the service life of spacecraft.For the safety for guaranteeing Spacecraft Electronic system, circuit designer would generally select and be directed to AEROSPACE APPLICATION has carried out the device of radiation hardening in technique or structure design, these devices identify it by ground experiment Anti-radiation performance.Generally acknowledged ground experiment method is the heavy ion beam current irradiation device generated using heavy ion avcceleration at present, It is horizontal with the Flouride-resistani acid phesphatase for assessing device.But since heavy ion beam circulation is very big, and the part for being difficult to be tied to device is small Region, therefore this method can only assess whether device integrally reaches anti-radiation index, for being not up to the device of Flouride-resistani acid phesphatase index It not can determine that its weakness zone, be not easy to device research institute and device is targetedly improved.Furthermore heavy ion accelerates Limited when device machine, experimental cost is expensive, development experiment that cannot be regular in device development process, device can also be developed into Degree has an impact.
It is a kind of means for simulating single particle effect that pulse laser irradiation device, which induces device fault, although it induces mechanism It is not quite identical with heavy ion, but it equally can preferably simulate single particle effect phenomenon.In addition, pulse laser has touching The hair moment is controllable, mobile platform has many advantages, such as 0.1um mobile accuracy, so that the irradiation test based on pulse laser can be in the time The accurate positioning to device weak moment and weakness zone is spatially realized, to realize the anti-radiation index evaluation of device, help It pushes away anti-radiation device and develops process.
Summary of the invention
It is an object of the invention to overcome test method in the prior art not establish the joint survey for a variety of effects Examination and defect for time and space dynamic synchronization between simulator and measured device, so that providing one kind can be to tested Time and space dynamic when locking single particle (SEL), single-ion transient state (SET) and single-particle inversion (SEU) occur for device is examined Apparatus and method are surveyed, indicate that the locking single particle, SET indicate that single-ion transient state, SEU indicate with hereafter Chinese and English abbreviation SEL Single-particle inversion.
To achieve the above object, the present invention provides a kind of device single particle effect weak spots to survey and draw screening device,
Described device include: upper computer control module 11, single-particle inversion detection components 13, measured device carrier 14, Three-dimensional mobile platform 15, controllable pulse laser emitter 16, CCD component 17 and industry control thermomechanical components 12;
The upper computer control module 11, for will be arranged mapping single particle effect weak spot shift position section and Test pattern parameter is sent to industry control thermomechanical components 12;It is shown and is drawn also according to the collected fault data of industry control thermomechanical components 12 Figure, storing data, obtain measured device occur single particle effect when sensibility and sensitizing range;
The industry control thermomechanical components 12 are sent to single-particle for forming mobile control instruction according to the parameter for receiving setting Overturn detection components 13 and control three-dimensional mobile platform 15;It is also used to upload single-particle inversion status data and ccd image To upper computer control module 11;
The three-dimensional mobile platform 15 is moved to test position according to mobile control instruction for receiving mobile control instruction It sets, sends pulse signal to single-particle inversion detection components 13;
The single-particle inversion detection components 13, are connected with measured device carrier 14, are used for after return pulse signal, Trigger signal is sent to controllable pulse laser emitter 16, and detects the single-particle inversion state of measured device under laser irradiation, Collected single-particle inversion status data is sent to industry control thermomechanical components 12;
The controllable pulse laser emitter 16 accurately irradiates quilt for emitting controllable pulse laser according to trigger signal Survey the measured device carried on device carrier 14;
The CCD component 17, for acquiring measured device substrate and controllable arteries and veins in 15 moving process of three-dimensional mobile platform Ccd image is sent to industry control thermomechanical components 12 by the ccd image for rushing laser focus position.
As a kind of improvement of described device, the upper computer control module 11 is specifically included: logging in unit, setting list Member, control unit, single-particle inversion recording unit and locking single particle recording unit and single-ion transient state recording unit;
The login unit, for realizing the industry control thermomechanical components 12 and three-dimensional mobile platform 15, CCD camera 17 and simple grain The network connection of son overturning detection components 13;
The setting unit, for the state and system parameter of single-ion transient state, locking single particle, single-particle inversion to be arranged Data;
Described control unit is shown for carrying out ccd image, graphical display, mobile station are mobile and testing and control;
The single-particle inversion recording unit, for recording when single-particle inversion occurs for the measured device carrier 14 The failure of pulse laser counting, fail address, initial data, fault data, coordinate when breaking down and time and statistics Digit;
The locking single particle recording unit, for the electric current and voltage that real-time display is got in the form of X-Y scheme, When recording voltage and current value when locking single particle occurs for the measured device carrier 14, pulse laser counting, breaking down Coordinate and the time;
The single-ion transient state recording unit, for the channel data that real-time display is got in the form of X-Y scheme, note Record impulse amplitude when single-ion transient state occurs for the measured device carrier 14, pulse width, pulse area, when breaking down Coordinate and the time.
As a kind of improvement of described device, the setting unit is specifically included:
Subelement is arranged in single-ion transient state, for triggering mode, triggering level, horizontal-shift and sample rate to be arranged;
Subelement is arranged in locking single particle, for latch-up current, latch duration, latch recovery time and repetition to be arranged Number;
Subelement is arranged in single-particle inversion, for test pattern, moving direction, overwrite pattern, initial address, test to be arranged Length and test content;With
System parameter setting subelement, for mobile station sweep spacing, scanning speed, laser frequency, CCD exposure to be arranged Amount, data storing path.
As a kind of improvement of described device, described control unit is specifically included: CCD shows subelement, graphical display Unit, mobile station control subelement and testing and control subelement;
The CCD shows subelement, for observing measured device substrate and laser focus state by CCD camera;
The graphical display subelement, for drawing two and three dimensions figure according to test data;
The mobile station controls subelement, for alignment unit position before testing and focus, setting test zone Point and terminal;
Testing and control subelement, for manually or automatically test pattern to be arranged and to locking single particle, single-ion transient state And the detail records of single-particle inversion.
As a kind of improvement of described device, the industry control thermomechanical components 12 are specifically included: PXI controller 121, Ethernet expand Exhibition card 122, locking single particle detection card 123 and oscillograph card 124;
The PXI controller 121, for complete with the Ethernet expansion card 122, locking single particle detection card 123 and Interactively communicating between oscillograph card 124 controls with instruction;
The Ethernet expansion card 122, for realizing mutual to the bus between the PXI controller 121 and other equipment Connection and extension;
The locking single particle detection card 123, for realizing the switching of internal and external power supply, voltage/current detection and mistake Stream protection and the function that locking single particle abort situation is calculated according to the trigger pulse received;
The oscillograph card 124, for realizing the acquisition of the single-particle transient generated to the measured device And the function of single-ion transient state abort situation is calculated according to the trigger pulse received.
As a kind of improvement of described device, the locking single particle detection card 123 is specifically included: the first master control FPGA device Part 1231, the first crystal oscillator 1232, the first configuration data memory 1233, pci bus controller (1234), D/A converter 1235, Level translator 1236, internal/external power switching device 1237, current comparator 1238 and ADC converter 1239;
The first master control FPGA device 1231 realizes that pci bus and PXI are controlled using the pci bus controller 1234 Interactive controlling between device 121 processed;
First crystal oscillator 1232 provides reference clock for the first master control FPGA device 1231;
First configuration data memory 1233 stores the configuration data of the first master control FPGA device 1231;
The D/A converter 1235 generates the first master control FPGA device 1231 specified supply voltage and threshold current;
The level translator 1236 realizes that multichannel is fixed and adjustable level is converted;
The internal/external power switching device 1237 instructs according to the first master control FPGA device 1231 and realizes that inside and outside power supply is cut Change function;
The current comparator 1238, the channel current value that will test are compared with given threshold electric current;
Channel current and voltage value are transmitted to the first master control FPGA device 1231 by the ADC converter 1239.
As a kind of improvement of described device, the first master control FPGA device 1231 includes the single-particle being arranged on Lock-in detection module: the locking single particle detection module includes clock control submodule, synchronously control submodule, LOCALBUS Control submodule, DIO control submodule, DAC control submodule, ADC control submodule and LED control submodule;
The clock control submodule inputs system for realizing 1231 inside PLL module of the first master control FPGA device Clock carry out process of frequency multiplication and generate the clock that each module needs;
The reset synchronously control submodule, within passing through external reset signal and inside PLL locking signal Output is as systematic reset signal after portion's 40M clock synchronizes;
The LOCALBUS control submodule realizes each function for realizing the data interaction with pci bus controller 1234 Control and data communication facility between energy logic;
The DIO control submodule sends and receives for realizing 50 railway digital IO of gating are configured by register mode;
The DAC control submodule, for controlling multiplex pulse output amplitude;
The AD control submodule is cached for being read in data write-in FIFO according to the operating mode of configuration;
The LED control submodule, for realizing control power supply and work light.
As a kind of improvement of described device, the single-particle inversion detection components 13 are specifically included: the second master control FPGA Device 131, the second crystal oscillator 132, Ethernet chip 133, the second configuration data memory 134, data storage 135, level turn Parallel operation 136 and high speed connector 137;
The second master control FPGA device 131 handles 15 pulse signal of three-dimensional mobile platform, the detection tested device The state of part single-particle inversion triggers the controllable pulse laser emitter 16 and injection external fault in real time;
Second crystal oscillator 132 provides reference clock for the second master control FPGA device 131;
The Ethernet chip 133 is realized between the second master control FPGA device 131 and the industry control thermomechanical components 12 Ethernet data transmission;
Second configuration data memory 134 stores the configuration data of the second master control FPGA device 131;
The data storage 135 stores the program of the second master control FPGA device 131 and the storage of ephemeral data;
The level translator 136 switches the direction IO and the selection IO level of the second master control FPGA device 131;
Second master control FPGA device 131 is connected by the high speed connector 137 with measured device carrier 14, transmits number According to, address and control signal.
As a kind of improvement of described device, single-particle inversion detection is provided on the second master control FPGA device 131 Module, the single-particle inversion detection module specifically include: clock control submodule, ARM submodule, system configuration submodule, Laser control submodule, SRAM controller submodule, data buffer storage submodule and DMA transfer submodule;
The clock control submodule carries out frequency multiplication to clock for realizing inside the second master control FPGA device 131 Processing generates the clock that each module needs;
The ARM submodule, for realizing ethernet communication function, according to the instruction that the PXI controller 121 issues, It realizes and the control of the logic function of system configuration submodule and data is transmitted;
The system configuration submodule is completed for configuring each function logic block parameter, operation mode and reading data Control and data interaction of the ARM submodule to logic function;
The laser control submodule generates the pulse of control laser for the parameter according to system configuration, laser Pulse-triggered SRAM controller submodule carries out the read-write of the outer SRAM signal of piece;
The SRAM controller submodule reads data from BRAM for the parameter and operation mode according to system configuration Out and according to timing SRAM is written, while according to the demand of system, the data that SRAM write is entered are read out, and are verified and are read Whether data are consistent with the data of write-in;
The data buffer storage submodule, for temporarily storing the data read out of SRAM controller submodule;
The DMA transfer submodule, for the result of processing to be uploaded to the upper computer control module 11.
The present invention also proposes a kind of device single particle effect weak spot mapping discriminating method, based on above-mentioned device single-particle Effect weak spot is surveyed and drawn screening device and is realized, comprising:
Step 1) the upper computer control module 11 by setting mapping single particle effect weak spot shift position section Industry control thermomechanical components 12 are sent to test pattern parameter;
Step 2) the industry control thermomechanical components 12 form mobile control instruction according to the parameter for receiving setting, are sent to single-particle Overturn detection components 13 and control three-dimensional mobile platform 15;
Step 3) the CCD component 17 acquires measured device substrate and controllable arteries and veins in 15 moving process of three-dimensional mobile platform Ccd image is sent to industry control thermomechanical components 12 by the ccd image for rushing laser focus position;
Step 4) the three-dimensional mobile platform 15 moves between the beginning and end in laser scanning region, and synchronous triggering can It controls pulse laser emission device 16 and emits laser, laser is enable accurately to irradiate measured device, carry out weak spot scan mapping operations; Single-particle inversion status data is uploaded industry control thermomechanical components 12 by the second master control FPGA device 131;Meanwhile the first master control FPGA The source current of 1231 real-time detection measured device of device;
Collected ccd image and single-particle inversion status data are uploaded to upper by step 5) the industry control thermomechanical components 12 Machine control module 11 shown and drawn, storing data, obtain sensibility when single particle effect occurs for measured device with it is quick Sensillary area domain.
As a kind of improvement of the method, the step 4) is specifically included:
Step 4-1) three-dimensional mobile platform 15 is moved to a test position, and the second master control FPGA device 131 is synchronous Controllable pulse laser emitter 16 is triggered, laser is generated and is irradiated;
The source current of first master control FPGA device, the 1231 real-time detection measured device;
The first master control FPGA device 1231 will test the source current of measured device and the latch-up current of setting carries out It compares:
If source current is less than setting value, collected voltage, electric current are shown in the form of X-Y scheme in simple grain Sub- lock reord unit;
If source current is more than setting value, according to the latch duration of setting and latch recovery time automatically to tested Device is powered off and is powered on, latch number+1, and voltage and current value when locking single particle occurs, pulse laser are counted, occurred Coordinate when failure is uploaded to upper computer control module 11;
If discovery latch number is more than the number of repetition of setting during the test, measured device is permanently powered off, is tied Beam detection;
Step 4-2) after laser irradiation, 131 all addresses of readback measured device of the second master control FPGA device Data, and be compared with right value:
If not finding to malfunction, continue to judge whether current test position is terminal, if it is judged that executing step for "No" Rapid 4-1);If it is judged that being thened follow the steps 5) for "Yes";
If it was found that error, executes step 4-3);
Step 4-3) by 15 physical location of the storage address of error, data and three-dimensional mobile platform, including X-axis and Y-axis Coordinate uploads industry control thermomechanical components 12;
Step 4-4) error data is corrected, measured device is written in correct data by master control FPGA device 131, and judgement is current Whether test position is terminal, if it is judged that being transferred to step 4-1 for "No") it continues to execute;If it is judged that be "Yes", It thens follow the steps 5).
Compared with prior art the present invention has the advantages that
1, a kind of device single particle effect weak spot of the invention mapping screening device and method are triggered using pulse laser Controllably, the advantages that mobile platform mobile accuracy is controllable is realized that 250ns trigger interval, 0.1um mobile accuracy are precisely controlled, is led to Control mobile platform mobile accuracy is crossed with speed, synchronous laser triggering and device under test Function detection, it can be achieved that precise positioning waits for Survey single particle effect occurs for device weak moment and weak location.
2, a kind of device single particle effect weak spot of the invention mapping screening device and method can support locking single particle (SEL), the independent test or joint test function of single-ion transient state (SET) and single-particle inversion (SEU).
3, a kind of device single particle effect weak spot of the invention mapping screening device and method are injected with external fault Function, can any single particle effect test macro of compatible external, realize the joint test of a variety of test macros and test method.
Detailed description of the invention
Fig. 1 is a kind of structure chart of device single particle effect weak spot mapping screening device of the invention;
Fig. 2 is the function of upper computer control module in a kind of device single particle effect weak spot mapping screening device of the invention It can schematic diagram;
Fig. 3 is locking single particle detection card in a kind of device single particle effect weak spot mapping screening device of the invention Structure chart;
Fig. 4 is locking single particle detection card the in a kind of device single particle effect weak spot mapping screening device of the invention The functional schematic of one master control FPGA device;
Fig. 5 is single-particle inversion detection components in a kind of device single particle effect weak spot mapping screening device of the invention Structure chart;
Fig. 6 is single-particle inversion detection components in a kind of device single particle effect weak spot mapping screening device of the invention The functional schematic of second master control FPGA device.
Specific embodiment
The present invention will be described in detail in the following with reference to the drawings and specific embodiments.
The present invention proposes a kind of device single particle effect weak spot mapping screening device, comprising: upper computer control module 11, Industry control thermomechanical components 12, single-particle inversion detection components 13, measured device carrier 14, three-dimensional mobile platform 15, controllable pulse swash Optical transmitting set 16 and CCD camera 17;Wherein,
The upper computer control module 11, for realizing control to whole device move mode and test pattern and right The display and drawing of fault data;
The industry control thermomechanical components 12 complete system testing using PXI system, it is internal comprising standard PXI controller 121, with Too net expansion card 122, oscillograph card 124 and the locking single particle detection card 123 voluntarily developed;
Moving pulse signal and position of the acquisition of single-particle inversion detection components 13 to the three-dimensional mobile platform 15 Information, the carry out SEU detection to the measured device and the synchronous triggering controllable pulse laser emitter 16;
The measured device carrier 14 carries measured device, to meet the needs of test different components, by measured device Carrier 14 is designed to that daughter board form is connect with the single-particle inversion detection components 13;
The single-particle inversion detection components 13 are arranged in the three-dimensional mobile platform 15,
The three-dimensional mobile platform 15 realizes the movement to 14 three-dimensional space of measured device carrier;
The controllable pulse laser emitter 16 and the CCD camera 17 are that pulse laser irradiation tests special equipment mould Block.
The controllable pulse laser emitter 16 emits laser irradiation measured device;
The substrate of the CCD camera observation measured device, display measured device and controllable pulse laser emitter 16 gather Defocus distance;The upper computer control module 11 is the software support of this system, comprising: logs in unit, setting unit, control list Member, SEU recording unit, SEL recording unit and SET recording unit;Wherein,
The login unit is for realizing the industry control thermomechanical components 12 and the three-dimensional mobile platform 15, the CCD camera 17 and the single-particle inversion detection components 13 network connection.
The setting unit can be divided into 4 parts:
Subelement is arranged in SET, for triggering mode, triggering level, horizontal-shift and sample rate to be arranged;SEL setting is single Member, for latch-up current, latch duration, latch recovery time and number of repetition to be arranged;
SEU be arranged subelement, for be arranged test pattern, moving direction, overwrite pattern, initial address, testing length and Test content;
System parameter setting subelement, for mobile station sweep spacing, scanning speed, laser frequency, CCD exposure to be arranged Amount and data storing path.
Described control unit can be divided into 4 parts:
CCD shows subelement, and for observing device substrate, laser focuses;Graphical display subelement, for according to test number According to drafting two and three dimensions figure;
Mobile station controls subelement, for alignment unit position before testing and focus, be arranged test zone starting point and Terminal;Testing and control subelement, for manually and automatically two kinds of test modes to be arranged and to the details of test SEU, SET, SEL Record;
The SEU recording unit, for record pulse laser counting when SEU occurs for the measured device, fail address, The failure digit of initial data, fault data, coordinate when breaking down and time and statistics;
Described in the SEL recording unit, real-time display is got in the form of X-Y scheme electric current and voltage and record Coordinate and time when voltage and current value, pulse laser when SEL occurs for measured device are counted, broken down;
The SET recording unit, the channel data and record the quilt that real-time display is got in the form of X-Y scheme Survey impulse amplitude, pulse width, pulse area, coordinate when breaking down and the time when SET occurs for device.
The industry control thermomechanical components 12 include: PXI controller 121, Ethernet expansion card 122, locking single particle detection card 123 And oscillograph unit card 124;Wherein,
The industry control thermomechanical components 12 complete system testing work using PXI software, wherein the PXI controller 121, ether Net expansion card 122, locking single particle detection card 123 and oscillograph unit card 124 are installed in PXI cabinet;
The PXI controller 121 is the control core of the industry control thermomechanical components 12, is completed and the Ethernet expansion card 122, the communication and control between locking single particle detection card 123, oscillograph card 124 and other peripheral hardwares;
The Ethernet expansion card 122 realizes bus bar and extension to 121 network equipment of PXI controller;
The locking single particle detection card 123 realizes internal and external power supply switching, voltage/current detection, overcurrent protection And the function of SEL abort situation is calculated according to the trigger pulse received;
The oscillograph card 124 for realizing the SET pulse signal that the measured device is generated acquisition and according to The trigger pulse received calculates the function of SET abort situation.
Locking single particle detection card 123 includes: the first master control FPGA device 1231, the first crystal oscillator 1232, first matches Set data storage 1233, pci bus controller 1234, D/A converter 1235, level translator 1236, internal/external power switch Part 1237, current comparator 1238 and ADC converter 1239;Wherein,
The first master control FPGA device 1231 realizes pci bus equipment and institute using the pci bus controller 1234 State the interactive controlling between PXI controller 121;
The crystal oscillator 1232 is that the first master control FPGA device 1231 provides reference clock;
The configuration data memory 1233 stores the configuration data of the master control FPGA device 1231;
The D/A converter 1235 generates the specified supply voltage and threshold current of the master control FPGA device 1231;
The electrical level transferring chip 1236 realizes that multichannel is fixed and adjustable level is converted;
The internal/external power switching device 1237 is instructed according to the first master control FPGA device 1231 realizes inside and outside electricity Source handoff functionality;The channel current value that the current comparator 1238 will test is compared with given threshold electric current;
Channel current and voltage value are transmitted to the master control FPGA device 1231 by the ADC converter 1239.
The first master control FPGA device 1231 realizes that SEL is detected by the SEL detection control module being arranged on, The SEL detection control module includes: clock control submodule, synchronously control submodule, LOCALBUS control submodule, DIO Control submodule, DAC control submodule, ADC control submodule and LED control submodule;
Wherein, the clock control submodule, for realizing the 1231 inside PLL module pair of the first master control FPGA device The clock of system input carries out process of frequency multiplication, the clock that each module needs in generation system;
The reset synchronously control submodule, within passing through external reset signal and inside PLL locking signal Portion's 40M clock synchronize after output as systematic reset signal;
The LOCALBUS control submodule is realized for realizing the interactive interface with the pci bus controller 1234 Control and data communication facility between PCI main equipment and function logic;
The DIO control submodule sends and receives for realizing 50 railway digital IO of gating are configured by register mode, Overcurrent warning control signal section, internal/external power switching control section, external power supply detection part can be divided into;
The DAC control submodule configures the D/A converter 1235 for realizing by host computer, controls multiplex pulse Output amplitude;
Told AD control submodule configures analog channel, 1239 basis of ADC converter for realizing by host computer The operating mode of configuration reads in data write-in FIFO and caches;
The LED control submodule, for realizing control power supply and work light.
The single-particle inversion detection components 13 include: the second master control FPGA device 131, crystal oscillator 132, Ethernet chip 133, configuration data memory 134, data storage 135, level translator 136 and high speed connector 137;Wherein,
The second master control FPGA device 131 is the control core of whole system, main to realize to described three-dimensional mobile flat The processing of 15 pulse signal of platform the measured device carrier 14 occurs the detection of SEU, to the controllable pulse Laser emission The function of the triggering in real time of device 16 and external fault injection;
Second crystal oscillator 132 is that the second master control FPGA device 131 provides reference clock;
The Ethernet chip 133 is realized between the second master control FPGA device 131 and the industry control thermomechanical components 12 Gigabit Ethernet data transfer mode;
Second configuration data memory 134 is used to store the configuration data of the second master control FPGA device 131;Institute Data storage 135 is stated for 131 program of the second master control FPGA device operation and ephemeral data storage;
136 pairs of institutes second of the level translator state the switching of the master control direction FPGA device 131IO, selection IO level;
The high speed connector 137 connects the second master control FPGA device 131 and the measured device, realize data, Address, the transmission for controlling signal.
The second master control FPGA device 131 it is real by the software program single particle effect detection module being arranged on Existing single particle effect detection, the single particle effect detection module includes: clock control submodule, ARM submodule, system configuration Submodule, laser control submodule, SRAM controller submodule, data buffer storage submodule and DMA transfer submodule;Wherein,
The clock that clock control submodule inputs system for realizing the 131 inside PLL module of master control FPGA device Carry out process of frequency multiplication, the clock that each module needs in generation system;
ARM submodule is for realizing ethernet communication function, according to the instruction that the PXI controller 121 occurs, realization pair The control of system configuration module and data are transmitted;
The major function of system configuration submodule is to realize the operation of logical internal register access, realizes each function logic block Parameter configuration and reading data function complete control and data interaction of the ARM module to logic function;
Laser control submodule generates the pulse of control laser according to the configuration of system, and the pulse of laser can trigger again SRAM controller carries out the read-write of the outer SRAM signal of piece;
The major function of SRAM controller submodule is the information and operation mode according to system configuration, by data from BRAM It reads and SRAM is written according to timing, while according to the demand of system, the data that SRAM write is entered are read out, read to verify Whether the data arrived are consistent with the data of write-in;
Data buffer storage submodule is for temporarily storing the data read out of sram cell;
DMA transfer submodule is used to the result of processing being uploaded to the upper computer control module 11.
The present invention also provides the needles realized based on the above-mentioned device single particle effect weak spot mapping screening device stated To the single particle effect weak spot test method of memory, comprising:
The second configuration data memory 133 is written in the configuration data of second master control FPGA device 131 by step 1);
After step 2) powers on, the second configuration data memory 133 automatically configures the second master control FPGA device 131;
Step 3) opening upper computer control module 11, setting three-dimensional mobile platform 15 and single-particle inversion detection components 13 IP address, after clickthrough, 11 AutoLink three-dimensional mobile platform 15 of upper computer control module, single-particle inversion detection components 13 With CCD camera 17;
After step 4) successful connection, into setting unit, it is configured;
Subelement, setting latch-up current, latch duration, latch recovery time and repetition time is arranged in SEL in step 5) Number;
In SEU, subelement, setting test pattern, moving direction, overwrite pattern, initial address, testing length and survey are set Try content;
In system parameter setting subelement, mobile station sweep spacing, scanning speed, laser frequency, CCD light exposure are set With data storing path;After being provided with, confirmation is clicked, into control unit;
Step 6) observes measured device in CCD display unit, by adjusting three-dimensional mobile platform 15, makes controllable pulse laser Transmitter 16 can accurately irradiate measured device, final starting point, terminal and the focus for determining test zone;
Curve in testing and control area, selection SEU and SEL is checked and function;
Step 7) starts to test, starter weakness spot scan mapping operations.With scanning area between 4um*5um, scanning Be divided into the entire test process for illustrating device for the test of 1um: the device includes 30=(4/1+1) * (5/1+1) a when working Test period, each test period include following operating process:
Step 7-1) three-dimensional mobile platform 15 is moved to next test point, the synchronous triggering of the second master control FPGA device 131 Laser is enabled, and the laser enables as 10us direct impulse;
Step 7-2) after laser is enabled, 131 all address dates of readback measured device of the second master control FPGA device And it is compared with right value: if not finding to malfunction, three-dimensional mobile platform 15 is waited to be moved to next test point, repeats to walk Rapid 7-1);If it was found that error, executes step 7-3);
Step 7-3) it by the storage address of error, data, 15 physical location of three-dimensional mobile platform include that X-axis and Y-axis are sat Mark, is uploaded to upper computer control module 11, and real-time display is recorded in graphics display area and SEU in the form of X-Y scheme Unit;
Step 7-4) the second master control FPGA device 131 time measured device of rewriting, to correct error data, waiting is three-dimensional to be moved Moving platform 15 is moved to next test point, repeats step 7-1);
Step 7-5) executing step 7-1) to step 7-4) during, 1231 real-time detection of the first master control FPGA device The source current of measured device is simultaneously compared with the latch-up current of setting, will acquisition if source current is less than setting value To voltage, electric current SEL recording unit is shown in the form of X-Y scheme;If source current is more than setting value, according to setting The latch duration and latch recovery time automatically to measured device power off and power on, latch number+1, and will occur SEL when Voltage and current value, pulse laser counts and coordinate when breaking down is uploaded to upper computer control module 11;If testing Find that latch number is more than the number of repetition of setting, then permanently powers off measured device, terminate this experimental test in journey;
After the completion of all period measurings of step 8), upper computer control module 11 records all test datas, carries out to data Analysis and graphical display;
Step 9) changes starting point, the terminal of laser energy and measured device test zone, repeats the above steps, and can get Sensibility and sensitizing range when measured device generation single particle effect, may be repeated test when necessary.
A kind of device single particle effect weak spot mapping screening device of the invention and method have the characteristics that real-time, greatly Amount data are uploaded to host computer by Ethernet interface, host computer data are analyzed after with two and three dimensions graphics mode into Row real-time display.
It should be noted last that the above case study on implementation is only used to illustrate the technical scheme of the present invention and not to limit it.Although It is described the invention in detail referring to case study on implementation, those skilled in the art should understand that, to skill of the invention Art scheme is modified or replaced equivalently, and without departure from the spirit and scope of technical solution of the present invention, should all be covered at this In the scope of the claims of invention.

Claims (11)

1. a kind of device single particle effect weak spot surveys and draws screening device, which is characterized in that described device includes: PC control Module (11), single-particle inversion detection components (13), measured device carrier (14), three-dimensional mobile platform (15), controllable pulse Laser emitter (16), CCD component (17) and industry control thermomechanical components (12);
The upper computer control module (11), the shift position section of the mapping single particle effect weak spot for that will be arranged and survey Examination mode parameter is sent to industry control thermomechanical components (12);It is shown simultaneously also according to industry control thermomechanical components (12) collected fault data Draw, storing data, obtain measured device occur single particle effect when sensibility and sensitizing range;
The industry control thermomechanical components (12) are sent to single-particle and turn over for forming mobile control instruction according to the parameter for receiving setting Turn detection components (13) and control three-dimensional mobile platform (15);Being also used to will be on single-particle inversion status data and ccd image Reach upper computer control module (11);
The three-dimensional mobile platform (15) is moved to test position according to mobile control instruction for receiving mobile control instruction, Pulse signal is sent to single-particle inversion detection components (13);
The single-particle inversion detection components (13), are connected with measured device carrier (14), are used for after return pulse signal, It sends trigger signal and gives controllable pulse laser emitter (16), and detect the single-particle inversion shape of measured device under laser irradiation Collected single-particle inversion status data is sent to industry control thermomechanical components (12) by state;
The controllable pulse laser emitter (16), for emitting controllable pulse laser according to trigger signal, accurate irradiation is tested The measured device carried on device carrier (14);
The CCD component (17), for acquiring measured device substrate and controllable arteries and veins in three-dimensional mobile platform (15) moving process Ccd image is sent to industry control thermomechanical components (12) by the ccd image for rushing laser focus position.
2. device single particle effect weak spot according to claim 1 surveys and draws screening device, which is characterized in that described upper Machine control module (11) specifically includes: logging in unit, setting unit, control unit, single-particle inversion recording unit and single-particle Lock reord unit and single-ion transient state recording unit;
The login unit, for realizing the industry control thermomechanical components (12) and three-dimensional mobile platform (15), CCD camera (17) and list Particle overturns the network connection of detection components (13);
The setting unit, for single-ion transient state, locking single particle, the state of single-particle inversion and system parameter number to be arranged According to;
Described control unit is shown for carrying out ccd image, graphical display, mobile station are mobile and testing and control;
The single-particle inversion recording unit, for recording arteries and veins when single-particle inversion occurs for the measured device carrier (14) The fault bit of impulse photometry number, fail address, initial data, fault data, coordinate when breaking down and time and statistics Number;
The locking single particle recording unit, for the electric current and voltage that real-time display is got in the form of X-Y scheme, record When voltage and current value, pulse laser when locking single particle occurs for the measured device carrier (14) are counted and broken down Coordinate and time;
The single-ion transient state recording unit records institute for the channel data that real-time display is got in the form of X-Y scheme When stating impulse amplitude when single-ion transient state occurs for measured device carrier (14), pulse width, pulse area and breaking down Coordinate and the time.
3. device single particle effect weak spot according to claim 2 surveys and draws screening device, which is characterized in that the setting Unit specifically includes:
Subelement is arranged in single-ion transient state, for triggering mode, triggering level, horizontal-shift and sample rate to be arranged;
Subelement is arranged in locking single particle, for latch-up current, latch duration, latch recovery time to be arranged and repeats secondary Number;
Subelement is arranged in single-particle inversion, for test pattern, moving direction, overwrite pattern, initial address, testing length to be arranged And test content;With
System parameter setting subelement, for be arranged mobile station sweep spacing, scanning speed, laser frequency, CCD light exposure and Data storing path.
4. device single particle effect weak spot according to claim 2 surveys and draws screening device, which is characterized in that the control Unit specifically includes: CCD shows subelement, graphical display subelement, mobile station control subelement and testing and control subelement;
The CCD shows subelement, for observing measured device substrate and laser focus state by CCD camera;
The graphical display subelement, for drawing two and three dimensions figure according to test data;
The mobile station controls subelement, for alignment unit position before testing and focus, be arranged test zone starting point and Terminal;
Testing and control subelement, for manually or automatically test pattern to be arranged and to locking single particle, single-ion transient state and list The detail records of particle overturning.
5. device single particle effect weak spot according to claim 1 surveys and draws screening device, which is characterized in that the industry control Thermomechanical components (12) specifically include: PXI controller (121), Ethernet expansion card (122), locking single particle detection block (123) and show Wave device card (124);
The PXI controller (121), for completing and the Ethernet expansion card (122), locking single particle detection card (123) Interactively communicating between oscillograph card (124) controls with instruction;
The Ethernet expansion card (122), for realizing mutual to the bus between the PXI controller (121) and other equipment Connection and extension;
The locking single particle detection card (123), for realizing the switching of internal and external power supply, voltage/current detection and overcurrent Protection and the function that locking single particle abort situation is calculated according to the trigger pulse received;
The oscillograph card (124), for realizing the single-particle transient that the measured device is generated acquisition with And the function of single-ion transient state abort situation is calculated according to the trigger pulse received.
6. device single particle effect weak spot according to claim 5 surveys and draws screening device, which is characterized in that the simple grain Sub- lock-in detection card (123) specifically includes: the first master control FPGA device (1231), the first crystal oscillator (1232), the first configuration data Memory (1233), pci bus controller (1234), D/A converter (1235), level translator (1236), internal/external power switching Device (1237), current comparator (1238) and ADC converter (1239);
The first master control FPGA device (1231) realizes that pci bus and PXI are controlled using the pci bus controller (1234) Interactive controlling between device (121) processed;
First crystal oscillator (1232) provides reference clock for the first master control FPGA device (1231);
First configuration data memory (1233) stores the configuration data of the first master control FPGA device (1231);
The D/A converter (1235) generates the first master control FPGA device (1231) specified supply voltage and threshold current;
The level translator (1236) realizes that multichannel is fixed and adjustable level is converted;
The internal/external power switching device (1237) instructs according to the first master control FPGA device (1231) and realizes that inside and outside power supply is cut Change function;
The current comparator (1238), the channel current value that will test are compared with given threshold electric current;
Channel current and voltage value are transmitted to the first master control FPGA device (1231) by the ADC converter (1239).
7. device single particle effect weak spot according to claim 6 surveys and draws screening device, which is characterized in that described first Master control FPGA device (1231) includes the locking single particle detection module being arranged on: the locking single particle detection module packet Include clock control submodule, synchronously control submodule, LOCALBUS control submodule, DIO control submodule, DAC control submodule Block, ADC control submodule and LED control submodule;
The clock control submodule inputs system for realizing the internal PLL module of the first master control FPGA device (1231) Clock carries out process of frequency multiplication and generates the clock that each module needs;
The reset synchronously control submodule passes through internal 40M for realizing by external reset signal and inside PLL locking signal Output is as systematic reset signal after clock synchronizes;
The LOCALBUS control submodule realizes each function for realizing the data interaction with pci bus controller (1234) Control and data communication facility between logic;
The DIO control submodule sends and receives for realizing 50 railway digital IO of gating are configured by register mode;
The DAC control submodule, for controlling multiplex pulse output amplitude;
The AD control submodule is cached for being read in data write-in FIFO according to the operating mode of configuration;
The LED control submodule, for realizing control power supply and work light.
8. device single particle effect weak spot according to claim 1 surveys and draws screening device, which is characterized in that the simple grain Son overturning detection components (13) specifically includes: the second master control FPGA device (131), the second crystal oscillator (132), Ethernet chip (133), the second configuration data memory (134), data storage (135), level translator (136) and high speed connector (137);
The second master control FPGA device (131) handles the three-dimensional mobile platform (15) pulse signal, the detection tested device The state of part single-particle inversion triggers the controllable pulse laser emitter (16) and injection external fault in real time;
Second crystal oscillator (132) provides reference clock for the second master control FPGA device (131);
The Ethernet chip (133) is realized between the second master control FPGA device (131) and the industry control thermomechanical components (12) Ethernet data transmission;
Second configuration data memory (134) stores the configuration data of the second master control FPGA device (131);
The data storage (135) stores the program of the second master control FPGA device (131) and the storage of ephemeral data;
The level translator (136) switches the direction IO and the selection IO level of the second master control FPGA device (131);
Second master control FPGA device (131) is connected by the high speed connector (137) with measured device carrier (14), transmission Data, address and control signal.
9. device single particle effect weak spot according to claim 8 surveys and draws screening device, which is characterized in that described second Single-particle inversion detection module is provided on master control FPGA device (131), the single-particle inversion detection module specifically includes: when Clock control submodule, ARM submodule, system configuration submodule, laser control submodule, SRAM controller submodule, data Cache sub-module and DMA transfer submodule;
The clock control submodule carries out at frequency multiplication clock for realizing the second master control FPGA device (131) is internal Reason generates the clock that each module needs;
The ARM submodule, it is real according to the instruction that the PXI controller (121) issues for realizing ethernet communication function Now the control of the logic function of system configuration submodule and data are transmitted;
The system configuration submodule completes ARM for configuring each function logic block parameter, operation mode and reading data Control and data interaction of the module to logic function;
The laser control submodule generates the pulse of control laser, the pulse of laser for the parameter according to system configuration Trigger the read-write that SRAM controller submodule carries out the outer SRAM signal of piece;
The SRAM controller submodule reads data simultaneously from BRAM for the parameter and operation mode according to system configuration SRAM is written according to timing, while according to the demand of system, the data that SRAM write is entered are read out, and verify the data read It is whether consistent with the data of write-in;
The data buffer storage submodule, for temporarily storing the data read out of SRAM controller submodule;
The DMA transfer submodule, for the result of processing to be uploaded to the upper computer control module (11).
10. a kind of device single particle effect weak spot surveys and draws discriminating method, based on device simple grain described in one of claim 1-9 Sub- effect weak spot mapping screening device is realized, comprising:
Step 1) the upper computer control module (11) by setting mapping single particle effect weak spot shift position section and Test pattern parameter is sent to industry control thermomechanical components (12);
Step 2) the industry control thermomechanical components (12) form mobile control instruction according to the parameter for receiving setting, are sent to single-particle and turn over Turn detection components (13) and control three-dimensional mobile platform (15);
Step 3) the CCD component (17) acquires measured device substrate and controllable arteries and veins in three-dimensional mobile platform (15) moving process Ccd image is sent to industry control thermomechanical components (12) by the ccd image for rushing laser focus position;
Step 4) the three-dimensional mobile platform (15) moves between the beginning and end in laser scanning region, and synchronous triggering is controllable Pulse laser emission device (16) emits laser, and laser is enable accurately to irradiate measured device, carries out weak spot scan mapping operations; Single-particle inversion status data is uploaded industry control thermomechanical components (12) by the second master control FPGA device (131);Meanwhile first master control The source current of FPGA device (1231) real-time detection measured device;
Collected ccd image and single-particle inversion status data are uploaded to host computer by step 5) the industry control thermomechanical components (12) Control module (11) shown and drawn, storing data, obtain sensibility when single particle effect occurs for measured device with it is quick Sensillary area domain.
11. device single particle effect weak spot according to claim 10 surveys and draws discriminating method, which is characterized in that the step It is rapid 4) to specifically include:
Step 4-1) three-dimensional mobile platform (15) is moved to a test position, and the second master control FPGA device (131) is synchronous It triggers controllable pulse laser emitter (16), generates laser and irradiated;
The source current of first master control FPGA device (1231) the real-time detection measured device;
The first master control FPGA device (1231) will test the source current of measured device and the latch-up current of setting is compared It is right:
If source current is less than setting value, collected voltage, electric current are shown in the form of X-Y scheme and locked in single-particle Determine recording unit;
If source current is more than setting value, according to the latch duration of setting and latch recovery time automatically to measured device Power off and power on, latch number+1, and by occur locking single particle when voltage and current value, pulse laser count, break down When coordinate be uploaded to upper computer control module (11);
If discovery latch number is more than the number of repetition of setting during the test, measured device is permanently powered off, terminates inspection It surveys;
Step 4-2) after laser irradiation, all number of addresses of the second master control FPGA device (131) readback measured device According to, and be compared with right value:
If not finding to malfunction, continue to judge whether current test position is terminal, if it is judged that executing step 4- for "No" 1);If it is judged that being thened follow the steps 5) for "Yes";
If it was found that error, executes step 4-3);
Step 4-3) storage address, data and three-dimensional mobile platform (15) physical location of error, including X-axis and Y-axis are sat Mark uploads industry control thermomechanical components (12);
Step 4-4) error data is corrected, measured device is written in correct data by master control FPGA device (131), judges current survey Try whether position is terminal, if it is judged that being transferred to step 4-1 for "No") it continues to execute;If it is judged that being "Yes", then Execute step 5).
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111398795A (en) * 2020-04-07 2020-07-10 华北水利水电大学 FPGA internal DSP unit testing device and using method
CN112164418A (en) * 2020-10-09 2021-01-01 湘潭大学 Memory single event effect test system, method and device
CN113030713A (en) * 2021-03-05 2021-06-25 中国科学院国家空间科学中心 System for laser detection of internal level state of integrated circuit
CN113091606A (en) * 2021-03-21 2021-07-09 西北工业大学 Cross-scale micro-nano structure laser manufacturing detection system and control method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102183723A (en) * 2010-12-31 2011-09-14 北京时代民芯科技有限公司 Device for detecting single event effect of 1553B interface circuit
CN103018659A (en) * 2012-11-26 2013-04-03 西北核技术研究所 System and method for testing frequency response of single event effect of processor
CN202929165U (en) * 2012-08-17 2013-05-08 中国电子科技集团公司第五十八研究所 Anti-irradiation detection system of integrated circuit
CN104181421A (en) * 2014-08-22 2014-12-03 中国科学院空间科学与应用研究中心 Device and method for field programmable gate array (FPGA) single event effect dynamic fault testing
CN105974905A (en) * 2016-05-10 2016-09-28 中国民航大学 Simulated test system and method for single-particle overturn fault of aviation data bus
CN108181521A (en) * 2017-11-29 2018-06-19 上海精密计量测试研究所 For the equipment and detection method of the detection of cmos image sensor single particle effect
CN109116149A (en) * 2018-07-27 2019-01-01 陕西夸克自控科技有限公司 A kind of laser mapping device of device SEE weak spot

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102183723A (en) * 2010-12-31 2011-09-14 北京时代民芯科技有限公司 Device for detecting single event effect of 1553B interface circuit
CN202929165U (en) * 2012-08-17 2013-05-08 中国电子科技集团公司第五十八研究所 Anti-irradiation detection system of integrated circuit
CN103018659A (en) * 2012-11-26 2013-04-03 西北核技术研究所 System and method for testing frequency response of single event effect of processor
CN104181421A (en) * 2014-08-22 2014-12-03 中国科学院空间科学与应用研究中心 Device and method for field programmable gate array (FPGA) single event effect dynamic fault testing
CN105974905A (en) * 2016-05-10 2016-09-28 中国民航大学 Simulated test system and method for single-particle overturn fault of aviation data bus
CN108181521A (en) * 2017-11-29 2018-06-19 上海精密计量测试研究所 For the equipment and detection method of the detection of cmos image sensor single particle effect
CN109116149A (en) * 2018-07-27 2019-01-01 陕西夸克自控科技有限公司 A kind of laser mapping device of device SEE weak spot

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
卢凌云等: "基于定向故障注入的SRAM型FPGA单粒子翻转效应评估方法 ", 《微电子学》 *
程佳等: "运算放大器单粒子瞬态脉冲效应试验评估及防护设计 ", 《空间科学学报》 *
韩建伟等: "脉冲激光试验在宇航器件和电路系统抗单粒子效应设计中的初步应用 ", 《航天器环境工程》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111398795A (en) * 2020-04-07 2020-07-10 华北水利水电大学 FPGA internal DSP unit testing device and using method
CN112164418A (en) * 2020-10-09 2021-01-01 湘潭大学 Memory single event effect test system, method and device
CN112164418B (en) * 2020-10-09 2021-10-01 湘潭大学 Memory single event effect test system, method and device
CN113030713A (en) * 2021-03-05 2021-06-25 中国科学院国家空间科学中心 System for laser detection of internal level state of integrated circuit
CN113030713B (en) * 2021-03-05 2021-11-09 中国科学院国家空间科学中心 System for laser detection of internal level state of integrated circuit
CN113091606A (en) * 2021-03-21 2021-07-09 西北工业大学 Cross-scale micro-nano structure laser manufacturing detection system and control method
CN113091606B (en) * 2021-03-21 2022-11-11 西北工业大学 Cross-scale micro-nano structure laser manufacturing detection system and control method

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