CN111707930A - Fault injection method based on single event effect - Google Patents
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Abstract
The invention discloses a fault injection method based on single event effect, which comprises the steps of fixing a test circuit board on a three-dimensional mobile platform, turning on a picosecond pulse laser, setting laser pulse frequency and determining stable operation of the laser; focusing laser on the front side of the test device, measuring the length a and the width b of the test device, and moving the three-dimensional moving platform to enable a laser spot to be positioned at one corner of microscopic imaging of the test device and serve as a scanning origin; powering up the test device and recording the working voltage; setting initial laser energy, and setting periodic movement of a three-dimensional mobile platform to enable laser fluence to cover a scanning test device; single particle locking of the chip occurs when the lowest laser energy is adopted; removing the test circuit board, replacing the test device, and repeating the test steps from S2 to S5; the picosecond pulse laser was turned off and the test was complete. The method has the advantages of short test time, low cost, repeated reproduction and the like, and cannot be realized by a fatigue test method. The method is suitable for the technical field of equipment testability verification and evaluation.
Description
Technical Field
The invention belongs to the technical field of equipment testability verification and evaluation, and particularly relates to a fault injection method based on a single event effect.
Background
The fault injection is an important support technology for equipment testability verification and evaluation tests and is also a key technology for acquiring potential fault special types of new equipment. At present, fault injection of a large-scale integrated circuit mainly adopts two modes, the first mode is to simulate a fault by modifying a firmware program and changing an output signal, and the second mode is to cause failure of a test device through a stress fatigue test so as to generate the fault. In contrast, the fault under the known state can only be simulated through simulation, the subjectivity of fault simulation is strong, and the objective condition of a newly-researched system is difficult to represent; the fatigue test is closer to reality, and the real fault state which may appear in the future use process of the newly-developed system can be simulated. However, the fatigue test not only takes a long time, but also causes irreversible damage to the device under test, which also increases the test cost.
Disclosure of Invention
The invention provides a fault injection method based on single event effect, which has the characteristics of short test time, low cost and repeated reproduction.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a fault injection method based on single event effect comprises the following steps:
s1, fixing the test circuit board on a three-dimensional moving table, turning on a picosecond pulse laser, setting laser pulse frequency, and determining stable operation of the laser;
s2, focusing laser on the front side of the test device, measuring the length a and the width b of the test device, and moving the three-dimensional moving platform to enable a laser spot to be positioned at one corner of the microscopic imaging of the test device and serve as a scanning origin;
s3, powering up the test device, and recording the working voltage;
s4, setting initial laser energy, and setting periodic movement of the three-dimensional mobile platform to enable the laser fluence to cover the scanning test device;
s5, adopting the lowest laser energy to generate single particle locking on the chip;
s6, removing the test circuit board, replacing the test device, and repeating the test steps S2-S5;
and S7, turning off the picosecond pulse laser, and finishing the test.
Furthermore, before the test, the length a of the test device corresponds to the Y axis of CCD imaging, the width b corresponds to the X axis of the CCD imaging, and the lower left corner of the CCD imaging of the test device is used as a scanning starting point.
Further, in the step S4, the three-dimensional mobile station is set to periodically move for b/10 periods in the following order:
(1) a distance of movement (a +50) μm along the-Y axis;
(2) moving the X-axis step length along the-X axis;
(3) a distance of movement (a +50) μm along the + Y axis;
(4) and moving the X-axis step along the-X axis.
Further, the laser fluence in the step S4 is 4 × 106cm-2The three-dimensional moving platform moves at a constant speed along the Y axis, the laser frequency is 1000Hz, and the moving speed of the three-dimensional moving platform is 5000 Mum.s-1。
Further, the method adopts a back side irradiation mode, during irradiation, the scanning initial laser energy is calculated and obtained according to the corresponding relation between the laser energy and the LET value of heavy ions, the scanning initial laser energy is set to be 230pJ, and the corresponding LET value is (10 +/-2.5) MeV-cm2·mg-1The surface incident laser energy range of the test device adopted by the method is 120 pJ-1500 pJ, and the corresponding LET value is (5 +/-1.25) to (60 +/-15.5) MeV-cm2·mg-1。
Further, the formula for calculating the LET value is as follows:
wherein E is the pulse energy of the laser, EionIs the energy required for the ion to excite a pair of electron-hole pairs, E0α is the absorption coefficient of the silicon material when the laser is incident, lambda is the wavelength, h is the thickness of the silicon substrate of the test device, rho is the density of the light absorbing substance, c is the speed of light, x is the propagation distance of the laser in the medium,
the ratio of the energy required to generate an electron-hole pair for a heavy ion to a pulsed laser.
Further, the lowest laser energy used in the step S5 is 120pJ at the lowest, corresponding to an LET value of (5. + -. 1.25) MeV. cm2·mg-1The single event lock of the chip occurs.
Due to the adoption of the structure, compared with the prior art, the invention has the technical progress that: the invention utilizes the photoionization mechanism of single pulse laser, and controls the energy size and the irradiation area of the pulse laser to enable the sensitive PN junction of the integrated circuit chip to generate a single particle phenomenon, thereby realizing the fault injection of a specific function area. Therefore, the fatigue testing method has the advantages of short testing time, low cost, capability of reproducing for multiple times and the like, which cannot be realized by the fatigue testing method, and the real fault advantage cannot be realized by the software simulation method.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
In the drawings:
FIG. 1 is a schematic block diagram of a test apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic illustration of laser microbeam focusing on the back of a test device in an embodiment of the present invention;
FIG. 3 is a schematic diagram of the main photon absorption mechanism in an embodiment of the present invention;
FIG. 4 is a graph of absorption coefficients of lasers with different wavelengths in a silicon material according to an embodiment of the present invention;
FIG. 5 is a graph illustrating the relationship between the penetration depth of lasers with different wavelengths in a silicon material according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of irradiation of a pulsed laser from the back of a test device in an embodiment of the present invention;
fig. 7 is a schematic diagram of a relative laser scanning method according to an embodiment of the invention.
Detailed Description
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for purposes of illustration and explanation only and are not intended to limit the present invention.
The invention discloses a fault injection method based on single event effect, as shown in figure 1, comprising the following steps:
s1, fixing the test circuit board on a three-dimensional moving table, turning on a picosecond pulse laser, setting laser pulse frequency, and determining stable operation of the laser;
s2, focusing laser on the front side of the test device, measuring the length a and the width b of the test device, and moving the three-dimensional moving platform to enable a laser spot to be positioned at one corner of the microscopic imaging of the test device and serve as a scanning origin;
s3, powering up the test device, and recording the working voltage;
s4, setting initial laser energy, and setting periodic movement of the three-dimensional mobile platform to enable the laser fluence to cover the scanning test device;
s5, adopting the lowest laser energy to generate single particle locking on the chip;
s6, removing the test circuit board, replacing the test device, and repeating the test steps S2-S5;
and S7, turning off the picosecond pulse laser, and finishing the test.
The invention utilizes the photoionization mechanism of single pulse laser, and controls the energy size and the irradiation area of the pulse laser to enable the sensitive PN junction of the integrated circuit chip to generate a single particle phenomenon, thereby realizing the fault injection of a specific function area. Therefore, the fatigue testing method has the advantages of short testing time, low cost, capability of reproducing for multiple times and the like, which cannot be realized by the fatigue testing method, and the real fault advantage cannot be realized by the software simulation method.
The test principle of the invention is as follows:
laser fault injection: and fault injection in a fixed time, fixed place and fixed fault mode is realized by using a pulse laser single event effect test method. Laser pulses generated by the laser are focused into micron-scale light spots through the light path adjusting subsystem to irradiate an active area in a device to be tested (DUT), and high-precision scanning of a single-particle sensitive unit of the DUT is realized through the high-precision imaging positioning subsystem. The laser pulse energy is regulated by the energy regulating module and is monitored by the energy monitoring subsystem; the light spot position and the test chip image are imaged on a computer through a high-precision imaging positioning subsystem. The system comprehensive control subsystem completes real-time automatic software control of other subsystems, and can efficiently and reliably complete single event effect test of a test device.
The single event effect is a phenomenon that high-energy particles collide with target atoms in a semiconductor material to ionize to form ionization tracks (a large number of electron-hole pairs) with extremely high charge density, and the ionization tracks are collected by a sensitive PN junction of a test device to cause storage or logic states of the test device to change. The key cause of the single event effect is that the high-energy particles introduce additional electron-hole pairs inside the test device. The pulse laser can simulate the single event effect generated by the space high-energy particles in the test device, and the focused single laser pulse can generate ionization tracks (a large number of extra electron-hole pairs) with high charge density in the test device through a photoionization action mechanism and can generate the single event phenomenon with the same action result as the high-energy particles after being collected by a sensitive PN junction of the test device. When the photon energy of the laser is larger than the forbidden bandwidth of the silicon semiconductor, the photons can generate electron-hole pairs in the semiconductor material through photoionization, so that the focused laser pulse can cause single-particle latch-up effect in a semiconductor test device like single ions.
The high-energy ions generate electron-hole pairs through inelastic collision with electrons outside the target atomic nucleus, and the laser generates the electron-hole pairs mainly through photoionization; the result of both modes of action is that charges are generated in the semiconductor, forming ionized tracks, and the interaction process of the charges in the tracks with the PN junction of the semiconductor test device is similar, which is the key point of equivalence.
In the single event effect, the charge collected by the PN junction is mainly from three parts: A. some of the charge collected in the depletion layer inherent to the PN junction; B. the other part comes from the funnel effect, namely the electric field originally limited in the depletion layer is redistributed along the ionization track, so that the electric field breaks through the depletion layer and extends out to a certain depth (the length of the funnel) along the ionization track, and therefore, carriers in the length of the funnel can drift under the action of the electric field and are collected by two poles of the PN junction; C. still another portion of the charge comes from charges deeper in the ionization path below the funnel length, which are collected by the PN junction by diffusion into the electric field region. For pulsed lasers, the three charge collection mechanisms described above are all confirmed by theory and experiments. Therefore, the pulsed laser is equivalent to heavy ions in that the ionized charges are collected by the sensitive PN junction and produce a single event effect.
The difference between the laser and the heavy ion induced single event effect mechanism is mainly reflected in the difference between the ionization charge generation mechanism, so that the ionization tracks of the laser and the heavy ion induced single event effect mechanism have certain difference. In the radial direction, it appears as a difference in track radius; in the longitudinal direction, a difference in range is exhibited.
For pulse laser, mainly by photoionization produce ionization charge, photoionization and heavy ion impact ionization form the electric charge track has very big difference, in the same geometry volume produce the same ionization electric charge amount the situation, the ionization charge radial that the laser produced becomes gaussian distribution, the specific gravity ion size is big, ionization charge density is also relatively low. The distance X of the lateral diffusion at a certain incident depth at a certain time of laser incidence can be obtained from a relational graph of the distance of the lateral diffusion at a certain incident depth and the electron concentration at a certain time.
In summary, although there is a difference between the heavy ion and the pulsed laser trajectory, the ionization trajectory diameters generated by the heavy ion and the pulsed laser trajectory are both within the outer space energetic particle ionization trajectory diameter distribution range, and can complement each other. Meanwhile, as long as enough ionization charges can be generated in the sensitive area of the test device to induce a single event effect, the 1064nm band pulse laser test in the back irradiation mode and the heavy ion test with enough range of the front irradiation have the same effect.
When the single event effect is tested by using the pulse laser, the process of inducing the single event effect by the heavy ion ionization track can be effectively simulated only by arranging the focusing plane of the laser microbeam near the active area of the test device. And a pulse laser is used for carrying out an irradiation test from the back of the test device, if a focused light spot is directly arranged on the surface of a silicon substrate of the test device as shown in figure 2, a laser microbeam can diffuse towards the inside of the substrate along a light path, the size of the light spot reaching an active area is far larger than 3-4 mu m, and the single event effect response of the test device cannot be accurately tested.
In the longitudinal direction, the intensity distribution of the pulsed laser light satisfies beer's law. The thickness of the silicon substrate of the test device is h, and the refractive index of the silicon material is n, Z0Is the coordinate position in the Z-axis direction when the laser focusing plane is on the surface of the substrate, then Z1Is the coordinate position where the laser is focused on the active area. According to the law of optical refraction, the following formula can be obtained for calculating the adjustment value of the laser focusing plane for realizing the back irradiation of the test device:
in the radial direction, the pulsed laser spot size is defined as follows: when the light intensity of the pulse laser light spot is attenuated to 1/e of the central value of the axis, the radius of the light spot is an effective radius omega (x), a polar coordinate system is established by taking the center of the focal plane as an origin, and then omega (x) can be expressed as follows:
wherein x is the propagation distance of the laser in the medium; omega0The effective radius of the laser beam in the focal plane, namely the radius of the beam waist of the laser beam, is determined by the focusing of a light path, f is the focal length of a focusing lens, and D is the beam spot diameter of the laser beam before entering the lens; x is the number of0Defined as the confocal depth, is the enlargement of the diameter of the spot of the laser beam propagating onto the focal plane
Multiple laser penetration depth. Assuming that the radial section of the laser beam is circular, the spot area SlasCan be expressed as:
the diameter of a focusing spot of the pulse laser is generally not less than 1 μm for 1064nm laser due to the limit of diffraction limit, the magnification of the pulse laser test objective lens adopted in the invention is 50 times, and the diameter of the focusing spot on the surface of the test device substrate is measured to be 2.2 μm.
The pulse laser equivalent LET value modeling method comprises the following steps:
mechanism of photoionization
The absorption of a photon by a substance is related to the electronic energy band structure of the material, and for the interaction process of the pulsed laser and the semiconductor material, when the photon energy is larger than the forbidden band width of the semiconductor, the valence band electron absorbs the transition of the electron from the valence band to the conduction band caused by the photon to form photoionization. For the action process of 1064nm laser and silicon semiconductor material, three mechanisms, namely Single Photon Absorption (SPA), free carrier absorption (free carrier absorption) and two-photon absorption (TPA), appear according to the incident laser intensity, as shown in fig. 3.
In FIG. 3, a part is single photon absorption. In general, pulsed laser light and silicon semiconductor material mainly take single photon absorption, that is, a process in which valence band electrons absorb energy of a single incident photon and then transition to a conduction band to become free electrons. The variation of the laser intensity due to single photon absorption with its incident depth in the material is as follows:
I＝I0e-αx
wherein I0For the initial incident laser intensity, I is the intensity of the laser after it has passed through a material of thickness x, and α is the single photon absorption coefficient of the material.
When the doping concentration of the semiconductor is high or the laser intensity is large, two photoionization mechanisms, namely free carrier absorption and two-photon absorption, can occur.
In fig. 3, the portion b is free carrier absorption. When the oscillation frequency of plasma in a semiconductor is close to the laser frequency, resonance absorption occurs, photon energy is absorbed by free electrons of the plasma to increase the energy, and therefore, the absorption mechanism only generates the heating effect of the free electrons and does not generate new ionization. The calculation shows that for 1064nm laser, resonance absorption is generatedThe required doping concentrations are 1.1 × 10 respectively20/cm3In general, the impurity concentration of a part of high-doped region in a microelectronic experimental device can reach 1018～1019/cm3Therefore, the influence of a free carrier absorption mechanism is not required to be considered when the single event effect of the test device is tested by the pulse laser.
In fig. 3, the portion c is two-photon absorption. When the energy density of the laser is high (1 GW/cm)2Magnitude) there is a phenomenon that two photons are absorbed at the same time, resulting in a reduction in the amount of laser photoionization charge. When a picosecond pulse laser with the wavelength of 1064nm is used for carrying out a single event effect experiment, the two-photon absorption effect is weaker and is generally ignored.
Equivalent LET value and method of calculating the same
The Equivalent LET (ELET) value concept is equivalent to the LET value of heavy ions based on the fact that the pulse laser and the heavy ions generate equivalent effective collection charges in the same sensitive region, namely the electron-hole pairs generated by different ionization mechanisms are the same in number, and the ELET is a quantitative expression mode for the single event effect of the pulse laser in experiments. The most direct advantage of the ELET is the same as the heavy ion LET value, pulse lasers with different wavelengths, different energies, different pulse widths and other parameters are unified, conversion is carried out through direct test parameters such as laser energy and the like, and the ELET is statistically convenient.
Under the linear absorption mechanism, considering only one electron-hole pair per photon, the number of charges (electron-hole pairs) generated per unit distance by the laser pulse is:
where E is the pulse energy of the laser, if the laser pulse is equivalent to an ion with linear energy transport density LET, by definition
The ions being in the semiconductor per unit lengthThe number of charges generated is:
wherein EionIs the energy required for an ion to excite a pair of electron-hole pairs. From Nlaser＝NionAnd using Beer's law that pulsed laser energy decays exponentially in silicon material:
E＝E0exp(-αx)
wherein E is0α is the absorption coefficient of silicon material for the incident laser intensity, which is strongly wavelength dependent, and is related as shown in FIG. 3.
The equivalent LET values for the available laser pulses are:
wherein E0Is the energy of the incident laser pulse, λ is the wavelength,
the term is the ratio of the energy required for the generation of an electron-hole pair by the heavy ion and the pulsed laser, i.e. ef. Fig. 4 and 5 show the relationship between absorption coefficient and penetration depth of different wavelengths of laser light in silicon material.
In consideration of the characteristic that the pulse laser cannot penetrate through the metal wiring layer of the test device, irradiation is carried out from the back of the silicon substrate of the test device in the test as shown in fig. 6, the main action process is that single laser pulse with the pulse width of picosecond magnitude and the beam spot of micrometer magnitude is equivalent to single high-energy heavy ion, and electron-hole pairs are generated in a semiconductor material through photoionization, so that the pulse laser can simulate the heavy ion to induce the single-particle effect.
According to the Beer law, the transmission attenuation characteristic of pulse laser in a silicon material meets the condition that the energy changes along with the incident depth and conforms to the exponential attenuation law. Therefore, to simulate the single event effect of heavy ions, the wavelength should be selected such that the laser pulse has sufficient penetration depth in the semiconductor material to ensure sufficient laser energy to reach the vicinity of the active region of the device under test to trigger the single event effect.
As a preferred embodiment of the invention, the functional block diagram of the testing device is shown in FIG. 1, a testing circuit board for welding a test sample is fixed on a three-dimensional moving platform, and the position and the moving mode of the three-dimensional moving platform are programmed and controlled by a control computer; irradiating the test sample by laser generated by the pulse laser after corresponding optical path adjustment and objective lens focusing; the surface of the test sample and the laser spots can be imaged by a CCD camera and displayed on a control computer; the test sample is powered by a direct current power supply and the output change of the matching circuit is monitored in real time. The specific scanning method comprises the following steps: before the test, the test circuit board is fixed on a three-dimensional moving table, the length a of a test sample generally corresponds to the Y axis of CCD imaging, the width b corresponds to the X axis of the CCD imaging, and the lower left corner of the sample CCD imaging is used as the origin of coordinate axes, namely the scanning starting point. In the test, the three-dimensional moving table is set to move periodically in the following sequence for b/10 periods in order to scan the test sample with the laser coverage.
(1) A movement distance (a +50) μm along the-Y axis;
(2) move 5 μm along the-X axis (X axis step size);
(3) a movement distance (a +50) μm along the + Y axis;
(4) moving 5 μm along the-X axis.
The laser moves in the opposite direction relative to the three-dimensional moving table, and the relative scanning mode is shown in fig. 7.
Wherein the laser fluence is 4 × 106cm-2I.e. the X-axis and Y-axis steps of a single laser are both 5 μm, where the X-axis step is set directly. The three-dimensional mobile station moves at a constant speed along the Y axis, the Y-axis step length is determined by the laser frequency and the moving speed of the three-dimensional mobile station, the laser frequency is set to be 1000Hz, and the moving speed of the three-dimensional mobile station is set to be 5000 Mum.s-1And the Y-axis step size meets the requirement of 5 mu m. The laser fluence related parameters are shown in table 1:
TABLE 1 laser fluence-related parameter Table
The test adopts a back irradiation mode, and during irradiation, the scanning initial laser energy is calculated and obtained according to the corresponding relation between the laser energy and the LET value of heavy ions, and is set to be 230pJ (the corresponding LET value is (10 +/-2.5) MeV-cm)2·mg-1) The range of the incident laser energy on the surface of the sample adopted in the test is 120 pJ-1500 pJ (LET value is (5 +/-1.25) to (60 +/-15.5) MeV-cm2·mg-1)。
The single event effect judging and processing method comprises the following steps: when the test sample works, the waveform is abnormal, and the single event effect is considered to occur. And when the single event effect occurs, waiting for the end of the chip scanning, manually powering off the test circuit by a tester, closing the laser shutter and stopping the scanning program of the three-dimensional mobile platform.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (7)
1. A fault injection method based on single event effect is characterized by comprising the following steps:
s1, fixing the test circuit board on a three-dimensional moving table, turning on a picosecond pulse laser, setting laser pulse frequency, and determining stable operation of the laser;
s2, focusing laser on the front side of the test device, measuring the length a and the width b of the test device, and moving the three-dimensional moving platform to enable a laser spot to be positioned at one corner of the microscopic imaging of the test device and serve as a scanning origin;
s3, powering up the test device, and recording the working voltage;
s4, setting initial laser energy, and setting periodic movement of the three-dimensional mobile platform to enable the laser fluence to cover the scanning test device;
s5, adopting the lowest laser energy to generate single particle locking on the chip;
s6, removing the test circuit board, replacing the test device, and repeating the test steps S2-S5;
and S7, turning off the picosecond pulse laser, and finishing the test.
2. The single event effect-based fault injection method according to claim 1, characterized in that: before the test, the length a of the test device corresponds to the Y axis of CCD imaging, the width b corresponds to the X axis of the CCD imaging, and the lower left corner of the CCD imaging of the test device is used as a scanning starting point.
3. The single event effect-based fault injection method according to claim 1, wherein in the step S4, the three-dimensional mobile station is configured to periodically move for b/10 periods in the following order:
(1) a distance of movement (a +50) μm along the-Y axis;
(2) moving the X-axis step length along the-X axis;
(3) a distance of movement (a +50) μm along the + Y axis;
(4) and moving the X-axis step along the-X axis.
4. The single event effect-based fault injection method as claimed in claim 1, wherein the laser fluence in step S4 is 4 × 106cm-2The three-dimensional moving platform moves at a constant speed along the Y axis, the laser frequency is 1000Hz, and the moving speed of the three-dimensional moving platform is 5000 Mum.s-1。
5. The single event effect-based fault injection method according to claim 1, characterized in that: the method adopts a back irradiation mode, and during irradiation, the scanning initial laser energy is calculated and obtained according to the corresponding relation between the laser energy and the LET value of heavy ions and is set as 230pJ, and the corresponding LET value is (10 +/-2.5) MeV-cm2·mg-1The method adopts the test device with the surface incident laser energy range of 120 pJ-1500 pJ and the corresponding LET value of (5 +/-1.25) to(60±15.5)MeV·cm2·mg-1。
6. The single event effect-based fault injection method according to claim 5, wherein the LET value is calculated by the following formula:
wherein E is the pulse energy of the laser, EionIs the energy required for the ion to excite a pair of electron-hole pairs, E0α is the absorption coefficient of the silicon material when the laser is incident, lambda is the wavelength, h is the thickness of the silicon substrate of the test device, rho is the density of the light absorbing substance, c is the speed of light, x is the propagation distance of the laser in the medium,
the ratio of the energy required to generate an electron-hole pair for a heavy ion to a pulsed laser.
7. The single event effect-based fault injection method according to claim 6, wherein: the minimum laser energy used in step S5 is 120pJ, corresponding to an LET value of (5. + -. 1.25) MeV. cm2·mg-1The single event lock of the chip occurs.
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| CN112649715A (en) * | 2020-12-14 | 2021-04-13 | 兰州空间技术物理研究所 | Laser single event effect test method for 3D stacked memory |
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| CN103884926A (en) * | 2012-12-21 | 2014-06-25 | 中国科学院空间科学与应用研究中心 | Pulse laser equivalent LET calculation method |
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| CN103884926A (en) * | 2012-12-21 | 2014-06-25 | 中国科学院空间科学与应用研究中心 | Pulse laser equivalent LET calculation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112649715A (en) * | 2020-12-14 | 2021-04-13 | 兰州空间技术物理研究所 | Laser single event effect test method for 3D stacked memory |
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