CN107358977A - A kind of test method that single-particle soft error is carried out with X ray - Google Patents
A kind of test method that single-particle soft error is carried out with X ray Download PDFInfo
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- CN107358977A CN107358977A CN201710511158.9A CN201710511158A CN107358977A CN 107358977 A CN107358977 A CN 107358977A CN 201710511158 A CN201710511158 A CN 201710511158A CN 107358977 A CN107358977 A CN 107358977A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/10—Test algorithms, e.g. memory scan [MScan] algorithms; Test patterns, e.g. checkerboard patterns
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
Abstract
The invention discloses a kind of test method that single-particle soft error is carried out with X ray, comprise the following steps：To bias voltage of the SRAM test devices loading less than normal voltage；X-ray radiation is carried out to SRAM test devices, records test data；And corresponding SEU cross section under bias voltage is calculated according to test data.By the present invention in that the test method that single-particle soft error is carried out with X ray confirms nanoscale devices during x-ray irradiation, caused secondary electron, device can be caused to overturn, compared to previous studies, research to the single particle effect of nanoscale devices, a kind of ground simulation source is added, compared to other radiation sources, it is easy to shielding, radiationless residual with close rate precise control, irradiation, the advantages of being readily available during machine.
Description
Technical field
The invention belongs to Space Radiation Effects and reinforcement technique field.It is more particularly related to one kind X ray
Carry out the test method of single-particle soft error.
Background technology
SRAM (SRAM) is made extensively due to the advantages that its read or write speed is fast, low in energy consumption, high integration
With.As one of memory essential in airship, satellite, huge effect is played in terms of data storage.
For needing to perform the satellite of space mission, in outer space environment, there is substantial amounts of galactic cosmic
The particle of ray, solar flare and earth magnetism capture band, very important shadow can be produced to the reliability of electronic equipment on satellite
Ring, have a strong impact on the service life of satellite.In numerous radiation effects, Single event upset effecf as main radiation effect and
Receive much concern.When single-particle inversion (Single Event Upset) refers to that particle passes through chip, off-energy is understood along its path,
Substantial amounts of hole-electron pair is produced, these electric charges produce transient pulse, make the logic shape of device by drifting about and diffusion is collected
State is overturn.
With integrated circuit to high integration, low characteristic size continue to develop, grid length, node depth, the oxide layer of device
Thickness all reduces accordingly.Fig. 1 show device under different characteristic size and the required critical charge of upset occurs.Judge device
Whether single-particle inversion is occurred, depending on critical charge (Qcrit) size.The definition of critical charge is that sensitive electrode is collected into
, the lowest charge that device logic state can be caused to overturn.As can be seen that device feature size is smaller, the number of critical charge
Value is also just smaller, and it is also easier that single-particle inversion occurs.
The simulation source for being generally used for simulating single particle effect experiment is generally heavy ion avcceleration, pulse laser, transuranium core
Element (252Cf) etc..By above-mentioned simulation source, substantial amounts of single particle effect is carried out for SRAM device both at home and abroad and has studied.X is penetrated
The one kind of line as irradiation bomb, due to the particularity of itself, it is used for carrying out SRAM device the research of total dose effect, it is right
It is rarely reported in the research of single particle effect.The interaction of X ray and material can have various ways, in low energy, photon
Mainly reacted with electron outside nucleus, reaction type includes photoelectric effect, Compton scattering, pair effect etc..Carrying out list
In the research of particle effect, primary concern is that the photoelectric effect that energy occurs under 30keV-100keV is electric to caused by device
From damage.Multi-layer metal wiring layer present in device, the high atomic number material (such as W) contained in special metal wiring layer with
Sensitizing range (the main component SiO of device2) the widely different interface of atomic number is constituted, there are Dose Enhancement Effects, produce
Raw substantial amounts of secondary electron, these secondary electrons can cause extra energy to deposit in device inside, these secondary electron energy
Deposition rate photoelectron in itself caused by energy deposition will be big it is more, extra energy is deposited in device sensitizing range, can be greatly
Increase device occur single-particle inversion probability.
For nanoscale devices, particularly after the characteristic size of SRAM device reaches 40nm, 28nm, the simple grain of device
Sub- susceptibility increase, the single-particle inversion caused by photoelectric effect caused by secondary electron will be more and more significant.Pass through experiment
The SEU cross section for obtaining X ray provides important technology for the assessment of the resistance to single-particle inversion ability of device.
The content of the invention
It is an object of the invention to solve above-mentioned at least one problem or defect, and provide will be described later at least one
Individual advantage.
It is a still further object of the present invention to provide a kind of test method that single-particle soft error is carried out with X ray, it can
Under different bias voltage conditions, SEU cross section corresponding to acquisition, it was confirmed that nanoscale devices are in x-ray irradiation process
In, caused secondary electron, device can be caused to overturn.Compared to previous studies, to the single-particle of nanoscale devices
The research of effect, add a kind of ground simulation source.
In order to realize according to object of the present invention and further advantage, there is provided it is soft that one kind with X ray carries out single-particle
The test method of mistake, comprises the following steps：
To bias voltage of the SRAM test devices loading less than normal voltage；
X-ray radiation is carried out to SRAM test devices, records test data；And
Corresponding SEU cross section under bias voltage is calculated according to test data.
Preferably, wherein, comprise the following steps：
Step 1: experiment pre-treatment is carried out to SRAM test devices；
Step 2: arrangement X ray ray machine；
Step 3: the different bias voltages less than normal voltage is loaded to SRAM test devices；
Step 4: carrying out X-ray radiation to SRAM test devices, test data is recorded, and calculate not according to test data
The corresponding SEU cross section with bias voltage.
Preferably, wherein, in the step 1, specifically include：Processing of uncapping is carried out to SRAM test devices, makes chip
It is exposed, after the completion of uncapping, test is powered up to chip, it is ensured that and chip carries out normal reading and writing data, and to test passes
SRAM test devices carry out packet numbering.
Preferably, wherein, in the step 2, specifically include：By fixture, irradiation plate is fixed on the accurate shiftings of xyz
On moving platform, using the target chamber center of laser aligner guarantee X ray ray machine and the exposed part of SRAM test devices same
On horizontal line.
Preferably, wherein, in the step 4, specifically include：Before X-ray radiation is started, primary data is write
55H, then adjusts the voltage bias voltage different into the step 3, carries out X-ray radiation to SRAM test devices, X is penetrated
After beta radiation terminates, the number N of single-particle inversion, flux phi occur for back read data, record, can calculate in different biasings
The SEU cross section σ of x-ray irradiation SRAM test devices under voltage, calculation formula are as follows：
Wherein, in formula M be SRAM test devices total bit, AcellFor the chip area of SRAM test devices, unit is
cm2。
Preferably, wherein, in the step 3, specifically include：0.5V, 0.7V are loaded respectively to SRAM test devices,
0.9V, or the bias voltage less than normal voltage 1.5V that 1.1V is different, and load 50kV tube voltage and 30mA tube current.
Preferably, wherein, in addition to step：The thick Al plate optical filters of 1mm are placed before SRAM test devices, it is therefore an objective to
In order to filter the low energy part in X ray, prevent total dose effect from being had an impact to result of the test.
Preferably, wherein, after X-ray radiation terminates, back read data specifically includes：After X-ray radiation terminates, it will bias
Voltage-regulation carries out whole retakings of a year or grade to normal voltage status, and to data, and the data with initially inserting are contrasted, if hair
Raw mistake, the data of misregistration and the address of error；Then data are again filled with, and retaking of a year or grade is carried out to data, it is ensured that are being returned
In read procedure, there is no any mistake, SRAM test devices can carry out normal reading and writing data, and its purpose is to ensure device
Part irradiation occur upset mistake be as the single-particle soft error caused by high energy electron, rather than add up total dose effect make
Into mistake.
The present invention comprises at least following beneficial effect：
1st, proposed in the present invention under different bias voltage conditions, corresponding SEU cross section can be obtained, demonstrate,proved
Real nanoscale devices caused secondary electron, can cause device to overturn during x-ray irradiation.Compared to
Preceding research, the research to the single particle effect of nanoscale devices, add a kind of ground simulation source；
2nd, the method for testing used in the present invention and other radiation sources have carried out the method taken of single particle experiment not
Together, the lower bias voltage that can be loaded by this method in irradiation test, smaller critical charge value can be obtained,
It is easier to make device that single-particle inversion occur, with the development of technology, device also can gradually reduce device for the consideration of power consumption
Operating voltage.The radiation research of device at a lower voltage can be carried out in advance by this method；
3rd, the X ray used in the present invention is compared to other radiation sources, valuable, Proton emission during heavy ion avcceleration machine
There is residual after device irradiation, for penetration depth of the pulse laser in opaque medium still not as good as normal light, X ray has close rate control
System is accurate, irradiation is easy to shielding, radiationless residual, the advantages that being readily available during machine.
Further advantage, target and the feature of the present invention embodies part by following explanation, and part will also be by this
The research and practice of invention and be understood by the person skilled in the art.
Brief description of the drawings
Fig. 1 is the schematic diagram of the critical charge under different characteristic size；
Fig. 2 is the schematic diagram of the transistor memory unit of standard 6；
Fig. 3 is the schematic diagram for loading bias voltage in one embodiment of the present of invention in radiation test；
Fig. 4 is operating process schematic diagram in one embodiment of the present of invention；
Fig. 5 is the result schematic diagram of single-particle inversion after being tested in one embodiment of the present of invention SRAM device.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings, to make those skilled in the art with reference to specification text
Word can be implemented according to this.
The technical principle of the present invention：
X ray, along its path meeting off-energy, produces substantial amounts of hole-electron pair in being irradiated to device, these
Electric charge is collected by drifting about, spreading, and is produced transient pulse, the data of device memory storage is changed.
SRAM device is made up of the array that static volatile memory cell is spliced into and its peripheral circuit.Translate its address
Code bit is inside SRAM, so operation can be written and read to any one memory cell.As shown in Fig. 26 for a standard
Transistor memory unit, it is made up of 4 NMOS tubes and 2 PMOSs.Tetra- transistors of N1, N2, P1, P2 join end to end composition two instead
Phase device, the backfeed loop of a closure is formd, form bistable structure, a data " 1 " or " 0 " can be stored.N3、N4
Two transistors are used for controlling whether to read or write data.
When inside particle entrance crystal pipe, particularly the space-charge region of N1, P2 pipe drain region reverse biased pn junction is device list
The sensitizing range of particle upset.If particle incides the drain electrode of N1 pipes, it is believed that now data storage is " 1 ", can cause device
Inside produces transient current, and metal-oxide-semiconductor drain voltage declines, and low level is reduced to by high level, and P1 pipes continue to turn on, and can cause
Data in memory cell fluctuate, and are unable to maintain that normal condition.At this moment Q points voltage declines, and influences N2, P2 grid, N2
Pipe ends, and P2 pipes conducting, node Q_ voltages rise, while N1 pipes turn on, and the cut-off of P1 pipes, by a series of feedback, makes storage
" 1 " in unit becomes " 0 ".
The condition that device is overturn is exactly to be collected into the total amount Q of electric charge>Qcrit, conversely, will not then overturn.Pass through
Fig. 2 understands that the characteristic size of device is smaller, QcritValue it is smaller, occur upset it is easier.It is critical for a device
The numerical value of electric charge is influenced by several parameters, in formula (1), SiO2Dielectric constant (εSiO2), dielectric constant of air (ε0) belong to
Definite value, cellar area (Acell) and oxidated layer thickness (tOX) determined in itself by device, that can uniquely change is exactly voltage (VDD),
Under different voltage, the numerical value of critical charge has
Institute is different.By checking, the voltage of device loading can still ensure that device can be normal when less than normal voltage
Work.So when carrying out the irradiation test of X ray,, can be with acquisition device by many experiments using the shown method in Fig. 3
The minimum bias voltage in irradiation process of part, in the state of this bias voltage, the critical charge value of device is up to
Minimum, the possibility of upset greatly increase.
Fig. 4 shows operating process schematic diagram in one embodiment of the present of invention, specifically comprises the following steps：
Step 1: carrying out processing of uncapping to SRAM test devices, make chip exposed, after the completion of uncapping, chip is added
Electrical testing, it is ensured that chip carries out normal reading and writing data, and carries out packet numbering to the SRAM test devices of test passes；
Step 2: by fixture, irradiation plate is fixed on xyz precise mobile platforms, ensures that X is penetrated using laser aligner
The target chamber center of ray machines and the exposed part of SRAM test devices are in the same horizontal line；
Step 3: SRAM test devices are loaded respectively 0.5V, 0.7V, 0.9V, or 1.1V it is different be less than normal voltage
1.5V bias voltage, and load 50kV tube voltage and 30mA tube current；
Step 4: before X-ray radiation is started, primary data 55H is write, then adjusts voltage into the step 3 not
With bias voltage, X-ray radiation is carried out to SRAM test devices, after X-ray radiation terminates, by bias voltage adjustment to normal
Voltage status, and whole retakings of a year or grade are carried out to data, the data with initially inserting are contrasted, if making a mistake, record is wrong
Data and the address of error by mistake；Then data are again filled with, and retaking of a year or grade is carried out to data, it is ensured that in read-back, are not had
Any mistake occurs, and SRAM test devices can carry out normal reading and writing data, and its purpose is to ensure that device occurs in irradiation
Upset mistake be rather than the mistake caused by accumulative total dose effect as the single-particle soft error caused by high energy electron, note
The number N of single-particle inversion, flux phi occur for record, can calculate the x-ray irradiation SRAM examinations under different bias voltages
The SEU cross section σ of device is tested, calculation formula is as follows：
Wherein, in formula M be SRAM test devices total bit, AcellFor the chip area of SRAM test devices, unit is
cm2。
In another embodiment, the present invention with X ray carry out single-particle soft error test method specifically include it is as follows
Step：
Need to carry out processing of uncapping to SRAM test devices before irradiation test, make chip exposed.It is after the completion of uncapping, it is necessary to right
SRAM test devices of uncapping are powered up test, ensure that SRAM test devices can carry out the storage of data, while remove unqualified
Device, and packet numbering is carried out to the SRAM test devices of test passes.By fixture, irradiation plate is fixed on xyz precisions
On mobile platform.Collimation calibration is carried out using laser aligner, ensures the exposed part of target chamber center and device in same level
On line；
Before irradiation test starts, under normal voltage, first by primary data 55H, it is written in SRAM test devices, and
Retaking of a year or grade is carried out to data, determines SRAM test devices in read-back, is produced without any mistake, then stops data readback,
And keep the data of filling no longer to change, and voltage is adjusted, make the bias voltage of regulation normally electric less than SRAM test devices
Source voltage, then start direct-current X-ray ray machine, select 50kV tube voltage and 30mA tube current to be irradiated, tried in SRAM
The thick Al plates of 1mm are placed before testing device, in order to are filtered the low energy part in X ray, prevented total dose effect to experiment
As a result have an impact；
After irradiation terminates, by bias voltage adjustment to normal voltage status, and whole retakings of a year or grade are carried out to data, it is and initial
The data inserted are contrasted, if making a mistake, the data of misregistration and the address of error.Then data are again filled with,
And retaking of a year or grade is carried out to data, it is ensured that in read-back, occur also without any mistake, device can carry out normal data
Read-write.It is as the single-particle soft error caused by high energy electron its purpose is to ensure device in the upset mistake that irradiation occurs
Miss, rather than mistake caused by accumulative total dose effect；
By repeating above-mentioned test procedure, different bias voltages is adjusted, the corresponding list under different voltages can be obtained
Particle upset cross section.
According to the method described above, obtain ISSI61WV devices SEU cross section under X ray and the results are shown in Table 1, upset is cut
Face and bias voltage curves are as shown in Figure 5.As can be seen that higher than 1.0V flop phenomenon does not occur for the bias voltage for working as loading,
Only when the biasing of loading is less than 1.0V, device is just overturn.In the case where X-ray energy is fixed, by formula (1)
Understand, the bias voltage of loading is lower, and the value of critical charge is smaller, easier generation single-particle inversion, is higher than in bias voltage
During 1.0V, the energy of secondary electron deposition is not enough to cause device to overturn, and shows X ray when single-particle inversion occurs,
Stronger dependence is pressed with for biased electrical.
Table 1ISSI61WV device X ray SEU cross section experimental results
| Bias voltage (V) | Upset cross section (cm2) |
| 1.2 | Do not overturn |
| 1.1 | Do not overturn |
| 1.0 | 3.79×10-14 |
| 0.9 | 4.74×10-13 |
Present invention solves the technical problem that it is：Do not changing element layout, on the premise of not changing production craft step, carrying
A kind of test method that device single-particle soft error is carried out using X ray is gone out.
Number of devices and treatment scale described herein are the explanations for simplifying the present invention.To being penetrated with X for the present invention
Line carries out the application of the test method of single-particle soft error, modifications and variations are apparent to one skilled in the art
's.
As described above, according to the present invention, under different bias voltage conditions, corresponding single-particle inversion can be obtained and cut
Face, it was confirmed that nanoscale devices caused secondary electron, can cause device to overturn during x-ray irradiation.Compare
In previous studies, the research to the single particle effect of nanoscale devices, a kind of ground simulation source is added.Made in the present invention
The method that method of testing and other radiation sources progress single particle experiment are taken is different, by this method can be in spoke
According to the lower bias voltage loaded in experiment, smaller critical charge value can be obtained, it is easier to make device that single-particle occur
Upset.With the development of technology, device also can gradually reduce the operating voltage of device for the consideration of power consumption.Pass through this side
Method can carry out the radiation research of device at a lower voltage in advance.X ray used in the present invention is compared to other radiation
Source, it is valuable during heavy ion avcceleration machine, there is residual after proton precessional magnetometer irradiation, pulse laser penetrates depth in opaque medium
Still not as good as normal light, there is X ray degree close rate precise control, irradiation to be easy to shielding, radiationless residual, be readily available during machine
Advantage.
Although embodiment of the present invention is disclosed as above, it is not restricted in specification and embodiment listed
With.It can be applied to various suitable the field of the invention completely., can be easily for those skilled in the art
Realize other modification.Therefore it is of the invention and unlimited under the universal limited without departing substantially from claim and equivalency range
In specific details and shown here as the legend with description.
Claims (8)
1. a kind of test method that single-particle soft error is carried out with X ray, it is characterised in that comprise the following steps：
To bias voltage of the SRAM test devices loading less than normal voltage；
X-ray radiation is carried out to SRAM test devices, records test data；And
Corresponding SEU cross section under bias voltage is calculated according to test data.
2. the test method of single-particle soft error is carried out with X ray as claimed in claim 1, it is characterised in that including as follows
Step：
Step 1: experiment pre-treatment is carried out to SRAM test devices；
Step 2: arrangement X ray ray machine；
Step 3: the different bias voltages less than normal voltage is loaded to SRAM test devices；
Step 4: carrying out X-ray radiation to SRAM test devices, test data is recorded, and difference is calculated partially according to test data
Put corresponding SEU cross section under voltage.
3. the test method of single-particle soft error is carried out with X ray as claimed in claim 2, it is characterised in that the step
In one, specifically include：Processing of uncapping is carried out to SRAM test devices, makes chip exposed, after the completion of uncapping, chip is powered up
Test, it is ensured that chip can carry out normal reading and writing data, and carry out packet numbering to the SRAM test devices of test passes.
4. the test method of single-particle soft error is carried out with X ray as claimed in claim 2, it is characterised in that the step
In two, specifically include：By fixture, irradiation plate is fixed on xyz precise mobile platforms, ensures that X is penetrated using laser aligner
The target chamber center of ray machines and the exposed part of SRAM test devices are in the same horizontal line.
5. the test method of single-particle soft error is carried out with X ray as claimed in claim 2, it is characterised in that the step
In four, specifically include：Before X ray starts radiation, write primary data 55H, then adjust voltage into the step 3 not
Same bias voltage, X-ray radiation is carried out to SRAM test devices, after X-ray radiation terminates, back read data, record occurs single
The number N of particle upset, flux phi, calculate the single-particle of the x-ray irradiation SRAM test devices under different bias voltages
Upset cross section σ, calculation formula are as follows：
<mrow>
<mi>&sigma;</mi>
<mo>=</mo>
<mfrac>
<mi>N</mi>
<mi>M</mi>
</mfrac>
<mfrac>
<mn>1</mn>
<mrow>
<msub>
<mi>&Phi;A</mi>
<mrow>
<mi>c</mi>
<mi>e</mi>
<mi>l</mi>
<mi>l</mi>
</mrow>
</msub>
</mrow>
</mfrac>
</mrow>
Wherein, in formula M be SRAM test devices total bit, AcellFor the chip area of SRAM test devices, unit cm2。
6. the test method of single-particle soft error is carried out with X ray as claimed in claim 2, it is characterised in that the step
In three, specifically include：SRAM test devices are loaded respectively 0.5V, 0.7V, 0.9V, or 1.1V it is different be less than normal voltage
1.5V bias voltage, and load 50kV tube voltage and 30mA tube current.
7. the test method of single-particle soft error is carried out with X ray as claimed in claim 2, it is characterised in that also include step
Suddenly：The thick Al plate optical filters of 1mm are placed before SRAM test devices, in order to filter the low energy part in X ray, prevent
Total dose effect has an impact to result of the test.
8. the test method of single-particle soft error is carried out with X ray as claimed in claim 5, it is characterised in that X-ray radiation
After end, back read data specifically includes：After X-ray radiation terminates, by bias voltage adjustment to normal voltage status, and logarithm
According to whole retakings of a year or grade are carried out, the data with initially inserting are contrasted, if making a mistake, the data of misregistration and the ground of error
Location；Then data are again filled with, and retaking of a year or grade is carried out to data, it is ensured that in read-back, do not have any mistake, SRAM examinations
Normal reading and writing data can be carried out by testing device, be by high energy electricity its purpose is to ensure device in the upset mistake that irradiation occurs
Mistake caused by single-particle soft error caused by son, rather than accumulative total dose effect.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107832556A (en) * | 2017-11-24 | 2018-03-23 | 湘潭大学 | A kind of single-particle inversion appraisal procedure and device |
| CN110221143A (en) * | 2019-05-29 | 2019-09-10 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | A kind of measured device soft error discriminating method, device and computer equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107832556A (en) * | 2017-11-24 | 2018-03-23 | 湘潭大学 | A kind of single-particle inversion appraisal procedure and device |
| CN110221143A (en) * | 2019-05-29 | 2019-09-10 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | A kind of measured device soft error discriminating method, device and computer equipment |
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