CN110632491A - System and method for measuring volt-ampere characteristic curve of semiconductor laser after irradiation - Google Patents

System and method for measuring volt-ampere characteristic curve of semiconductor laser after irradiation Download PDF

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Publication number
CN110632491A
CN110632491A CN201910865358.3A CN201910865358A CN110632491A CN 110632491 A CN110632491 A CN 110632491A CN 201910865358 A CN201910865358 A CN 201910865358A CN 110632491 A CN110632491 A CN 110632491A
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semiconductor laser
irradiation
volt
matrix switch
control computer
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CN110632491B (en
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王祖军
宁浩
薛院院
徐瑞
焦仟丽
刘敏波
姚志斌
何宝平
马武英
盛江坤
董观涛
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Xiangtan University
Northwest Institute of Nuclear Technology
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Xiangtan University
Northwest Institute of Nuclear Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests

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  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention relates to a system and a method for measuring a volt-ampere characteristic curve of a semiconductor laser after irradiation. The measuring system comprises a source meter, an irradiation plate, a matrix switch, a control computer and a cable; the input ends of the irradiation plates correspond to the semiconductor lasers to be tested one by one and are connected with each other, and the output ends of the irradiation plates correspond to the input ends of the switch units of the matrix switch one by one and are connected through cables; the output end of the switch unit of the matrix switch is connected with the input end of the source meter through a cable, the output end of the source meter is connected with the control computer, and the control computer is connected with the control end of the matrix switch. The invention breaks through the limitation of an experimental site on the test of experimental data in (after) the irradiation of the semiconductor laser, can be suitable for various radiation source test environments, and solves the influence of long line resistance on the measurement of the volt-ampere characteristic curve of the semiconductor laser.

Description

System and method for measuring volt-ampere characteristic curve of semiconductor laser after irradiation
Technical Field
The invention belongs to the technical field of radiation effect research, and particularly relates to a system and a method for measuring a volt-ampere characteristic curve of a semiconductor laser after irradiation.
Background
Semiconductor Lasers (LDs) have been widely used in the space field due to their advantages of small size, light weight, high efficiency, all solid state, low cost, etc. Semiconductor lasers are irradiated by various rays and particle radiation in a space environment, so that performance parameters of the devices are degraded and even fail. With the technical proposals of satellite laser communication, laser directional energy transfer, laser micro-propulsion, laser fire control and the like, the application requirements of the semiconductor laser in the fields of spacecrafts, communication satellites, space stations, carrier rockets and the like are increasingly urgent, and the research of the radiation effect mechanism of the semiconductor laser is urgently needed. The volt-ampere characteristic curve is an important radiation sensitive parameter of the semiconductor laser, so that the measurement of the volt-ampere characteristic curve is in a key position in the research of a radiation effect mechanism of the semiconductor laser.
In the ground radiation simulation test, a long-line test method is needed because the irradiation cavity is a certain distance away from the test chamber. After the irradiation experiment is finished, some radiation particles such as high-energy protons and reactor neutrons still have strong radiation, so that testers cannot approach the devices, and a long-line testing method is needed. The research of the radiation effect needs to consider the annealing effect of the device, but because the radiation particles remain, the annealing data can not be obtained in time, and a long-line test method needs to be used. When a voltage-current characteristic curve of a semiconductor laser is measured by using a long line, the partial voltage caused by the resistance of the long line is larger along with the increase of current, so that the uncertainty of a measurement result is increased. Due to the particularity of the irradiation environment, the device needs to be subjected to long-line in-situ measurement, so that the test measurement result needs to be corrected to remove the influence of the long-line resistance on the test result.
Disclosure of Invention
The invention provides a system and a method for measuring a volt-ampere characteristic curve of a semiconductor laser after irradiation, aiming at solving the technical problem that the measurement precision of the volt-ampere characteristic curve of the semiconductor laser is influenced by long line resistance.
The technical solution of the invention is as follows:
the invention provides a volt-ampere characteristic curve measuring system of a semiconductor laser after irradiation, which comprises a source meter, an irradiation plate, a matrix switch, a control computer and a cable, wherein the source meter is connected with the irradiation plate;
the input ends of the irradiation plates correspond to the semiconductor lasers to be tested one by one and are connected with each other, and the output ends of the irradiation plates correspond to the input ends of the switch units of the matrix switch one by one and are connected through cables;
the output end of the switch unit of the matrix switch is connected with the input end of the source meter through a cable, the output end of the source meter is connected with the control computer, and the control computer is connected with the control end of the matrix switch.
Furthermore, the cable is a GBIP cable.
Based on the above description of the volt-ampere characteristic curve measurement system of the irradiated semiconductor laser, a method for measuring the volt-ampere characteristic curve of the irradiated semiconductor laser by using the system is introduced, and the method comprises the following specific steps:
step 1: placing a semiconductor laser to be measured at a designated position in an irradiation cavity, selecting a proper cable length according to an actual field, and building a volt-ampere characteristic curve measuring system of the irradiated semiconductor laser;
step 2: acquiring the resistance value of the measuring system;
short-circuiting each pin of the semiconductor laser installed in the irradiation plate, respectively inputting 1-2mA current to each matrix switch unit through a control source table of a control computer under the condition of not providing irradiation, collecting data by the control computer, obtaining a resistance value R of a measurement system, and automatically storing the resistance value into the control computer;
and step 3: starting to provide irradiation, stopping irradiation after the irradiation reaches the specified accumulated fluence or dose, providing current values with different sizes to the semiconductor laser to be measured by the source meter through the switching unit of the matrix switch, and simultaneously feeding back the corresponding voltage values under different currents to the source meter by the semiconductor laser to be measured;
and 4, step 4: and the control computer obtains the actual voltage value of the semiconductor laser to be measured by removing the influence of the resistance of the measuring system through calculation, and draws the volt-ampere characteristic change curve of the semiconductor laser after irradiation according to the actual voltage value of the semiconductor laser to be measured and the current value provided by the source meter.
Further, the specific calculation process of the actual voltage value of the semiconductor laser in the step 4 is as follows: u shapeLD＝U1-I1R；
Wherein, ULDThe actual voltage value after the irradiation of the semiconductor laser to be detected is obtained;
U1feeding back the corresponding voltage values under different currents to the source meter for the tested semiconductor laser;
I1and providing current values with different sizes for the semiconductor laser to be tested through the switching units of the matrix switch for the source meter.
The invention has the beneficial effects that:
(1) the invention solves the problem of poor measurement precision of the volt-ampere characteristic curve of the semiconductor laser caused by cable resistance in long-line measurement in principle by introducing a source meter and a matrix switch and eliminating errors caused by the resistance value of a measurement system.
(2) The cable in the invention has wide variable range of length, is suitable for different irradiation test sites and can realize online test in the irradiation process.
(3) The invention can test a plurality of devices simultaneously by combining with the matrix switch, and has simple operation and high test efficiency.
(4) The method can be suitable for the long-line in-situ test of the volt-ampere characteristic curve of the semiconductor laser after different particles or rays (such as heavy ions, electrons, protons, reactor neutrons, X rays, gamma rays and the like) are irradiated.
Drawings
Fig. 1 is a schematic diagram of a long-line in-situ measurement system for a current-voltage characteristic curve of a semiconductor laser according to the present invention.
FIG. 2 is a schematic diagram of a long line test loop according to the present invention.
Fig. 3 is a current-voltage characteristic curve of the semiconductor laser measured by a conventional method.
Fig. 4 is a current-voltage characteristic curve of the semiconductor laser obtained by the measuring system and method of the present invention.
The reference numbers are as follows:
1-source meter, 2-matrix switch, 3-irradiation plate, 4-control computer, 5-cable and 6-tested semiconductor laser.
Detailed Description
In order to make the objects, advantages and features of the present invention clearer, the following provides a system and a method for measuring a current-voltage characteristic curve of a semiconductor laser after irradiation with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It should be noted that: the drawings are in simplified form and are not to precise scale, the intention being solely for the convenience and clarity of illustrating embodiments of the invention; second, the structures shown in the drawings are often part of actual structures.
Referring to fig. 1, the system is a semiconductor laser volt-ampere characteristic curve measuring system with a matrix switch, a source meter and a control computer as core instruments. The whole measuring system mainly comprises a source meter 1, a matrix switch 2, an irradiation plate 3, a control computer 4 and a cable 5; the input ends of the irradiation plates 3 correspond to the semiconductor lasers 6 to be tested one by one and are connected with each other, and the output ends of the irradiation plates 3 correspond to the input ends of the switch units of the matrix switch 2 one by one and are connected through cables 5;
the output end of a switch unit of the matrix switch 2 is connected with the input end of the source meter 1 through a cable 5, the output end of the source meter 1 is connected with the control computer 4, and the control computer 4 is connected with the control end of the matrix switch 2.
According to the number of experimental devices, corresponding irradiation plates can be manufactured, and measurement of the volt-ampere characteristic curve of the semiconductor laser after irradiation can be realized.
Referring to fig. 2, the current-voltage test circuit formed by the long line measurement provided by the invention is characterized in that under a new circuit relationship, the long line resistor is connected in series with the semiconductor laser and the source meter, so that the current measurement is not influenced. Because the voltage division condition of the long line resistor causes inaccurate test of the volt-ampere characteristic curve, measurement errors caused by the long line resistor need to be eliminated through calculation.
Through the system, the volt-ampere characteristic curve of the semiconductor laser before and after irradiation can be measured, and the measurement steps are as follows:
step 1: placing a semiconductor laser to be measured at a designated position in an irradiation cavity, selecting a proper cable length according to an actual field, and building a volt-ampere characteristic curve measuring system of the irradiated semiconductor laser;
step 2: acquiring the resistance value of the measuring system;
short-circuiting each pin of the semiconductor laser installed in the irradiation plate, respectively inputting 1-2mA current to each matrix switch unit through a control source table of a control computer under the condition of not providing irradiation, collecting data by the control computer, obtaining a resistance value R of a measurement system, and automatically storing the resistance value into the control computer;
and step 3: obtaining the volt-ampere characteristic change curve of the semiconductor laser before irradiation
Under the condition of no radiation, the source meter provides current values with different sizes to the semiconductor laser to be tested through a switching unit of the matrix switch, and meanwhile, the semiconductor laser to be tested feeds back corresponding voltage values under different currents to the source meter;
and 4, step 4: and the control computer obtains the actual voltage value of the measured semiconductor laser by removing the influence of the resistance of the measuring system through calculation, and draws the volt-ampere characteristic change curve of the semiconductor laser before irradiation according to the actual voltage value of the measured semiconductor laser and the current value provided by the source meter.
And 5: starting to provide irradiation, stopping irradiation after the irradiation reaches the specified accumulated fluence or dose, providing current values with different sizes to the semiconductor laser to be measured by the source meter through the switching unit of the matrix switch, and simultaneously feeding back the corresponding voltage values under different currents to the source meter by the semiconductor laser to be measured;
step 6: and the control computer obtains the actual voltage value of the semiconductor laser to be measured by removing the influence of the resistance of the measuring system through calculation, and draws the volt-ampere characteristic change curve of the semiconductor laser after irradiation according to the actual voltage value of the semiconductor laser to be measured and the current value provided by the source meter.
The specific calculation process of the actual voltage value of the semiconductor laser is as follows: u shapeLD＝U1-I1R；
ULDThe actual voltage value after the irradiation of the semiconductor laser to be detected is obtained;
U1feeding back the corresponding voltage values under different currents to the source meter for the tested semiconductor laser;
I1and providing current values with different sizes for the semiconductor laser to be tested through the switching units of the matrix switch for the source meter.
Contrast verification
In order to verify the real effectiveness of the invention, referring to fig. 3, the current-voltage characteristic curves of the semiconductor laser under the conditions that the lead lengths are 5 meters, 10 meters and 15 meters are measured by using the existing method. Fig. 4 is a graph showing the current-voltage characteristic of the semiconductor laser obtained by the measurement system and method of the present invention. It can be seen from fig. 3 and 4 that the current-voltage characteristic curve measurement result of the semiconductor laser measured by the conventional method under a long line condition is seriously deviated, which causes difficulty in the research of the radiation effect of the semiconductor laser. The long-line volt-ampere characteristic curve obtained by calculation of the invention is basically overlapped with the measurement result of the length without adding the line, thus keeping higher test precision.
The invention measures the volt-ampere characteristic curve of the semiconductor laser by adding the cable, the source meter and the matrix switch, thereby breaking through the limitation of the irradiation test field on the measurement of the device. And through calculation, the cable resistance in the measuring loop is measured, the influence of the cable resistance on the measurement precision is eliminated, the work efficiency of basic data measurement of the device after irradiation is improved, the harm of radiation remained on the device to testers is reduced, and the method has practical application significance for the development of radiation effect research.
Finally, it should be noted that the above description is only for describing the preferred embodiments of the present invention, and not for limiting the scope of the present invention, and that any changes and modifications made by those skilled in the art according to the above disclosure are all within the scope of the appended claims.

Claims (4)

1. The utility model provides a post irradiation semiconductor laser volt-ampere characteristic curve measurement system which characterized in that: the device comprises a source meter (1), an irradiation board (3), a matrix switch (2), a control computer (4) and a cable (5);
the input ends of the irradiation plates (3) are in one-to-one correspondence with the semiconductor lasers (6) to be tested and are connected with each other, and the output ends of the irradiation plates (3) are in one-to-one correspondence with the input ends of the switch units of the matrix switch (2) and are connected through cables (5);
the output end of a switch unit of the matrix switch (2) is connected with the input end of the source meter (1) through a cable (5), the output end of the source meter (1) is connected with the control computer (4), and the control computer (4) is connected with the control end of the matrix switch (4).
2. The post-irradiation semiconductor laser volt-ampere characteristic measurement system according to claim 1, characterized in that: the cable (5) is a GBIP cable.
3. A method for measuring a volt-ampere characteristic curve of a semiconductor laser after irradiation is characterized by comprising the following concrete implementation steps:
step 1: placing a semiconductor laser to be measured at a designated position in an irradiation cavity, selecting a proper cable length according to an actual field, and building a volt-ampere characteristic curve measuring system of the irradiated semiconductor laser as claimed in claim 1 or 2;
step 2: acquiring the resistance value of the measuring system;
short-circuiting each pin of the semiconductor laser installed in the irradiation plate, respectively inputting 1-2mA current to each matrix switch unit through a control source table of a control computer under the condition of not providing irradiation, collecting data by the control computer, obtaining a resistance value R of a measurement system, and automatically storing the resistance value into the control computer;
and step 3: starting to provide irradiation, stopping irradiation after the irradiation reaches the specified accumulated fluence or dose, providing current values with different sizes to the semiconductor laser to be measured by the source meter through the switching unit of the matrix switch, and simultaneously feeding back the corresponding voltage values under different currents to the source meter by the semiconductor laser to be measured;
and 4, step 4: and the control computer obtains the actual voltage value of the semiconductor laser to be measured by removing the influence of the resistance of the measuring system through calculation, and draws the volt-ampere characteristic change curve of the semiconductor laser after irradiation according to the actual voltage value of the semiconductor laser to be measured and the current value provided by the source meter.
4. The method for measuring the volt-ampere characteristic curve of the semiconductor laser after irradiation as claimed in claim 3, wherein: the specific calculation process of the actual voltage value of the semiconductor laser in the step 4 is as follows: u shapeLD＝U1-I1R；
Wherein, ULDThe actual voltage value after the irradiation of the semiconductor laser to be detected is obtained;
U1feeding back the corresponding voltage values under different currents to the source meter for the tested semiconductor laser;
I1and providing current values with different sizes for the semiconductor laser to be tested through the switching units of the matrix switch for the source meter.
CN201910865358.3A 2019-09-12 2019-09-12 System and method for measuring volt-ampere characteristic curve of semiconductor laser after irradiation Active CN110632491B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112953386A (en) * 2021-03-17 2021-06-11 中国科学院微小卫星创新研究院 Method for measuring volt-ampere characteristics of solar cell array of satellite
CN116243133A (en) * 2023-05-11 2023-06-09 中国科学院长春光学精密机械与物理研究所 Nondestructive prediction system and method for radiation damage resistance of semiconductor laser

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CN206450788U (en) * 2016-12-29 2017-08-29 西北核技术研究所 Radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods
CN207720094U (en) * 2017-10-20 2018-08-10 湖北工业大学 A kind of test device of Condensation photovoltaic battery

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JP2007155663A (en) * 2005-12-08 2007-06-21 Nec Electronics Corp Esd-testing device
US7633308B1 (en) * 2007-02-09 2009-12-15 Keithley Instruments, Inc. Combined pulse and DC test system
CN101769964A (en) * 2008-12-29 2010-07-07 北大方正集团有限公司 Method, device and system for testing conducting resistance of packaged field-effect tube
TW201316011A (en) * 2011-10-03 2013-04-16 Star Techn Inc Switching matrix and testing system for semiconductor characteristic using the same
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112953386A (en) * 2021-03-17 2021-06-11 中国科学院微小卫星创新研究院 Method for measuring volt-ampere characteristics of solar cell array of satellite
CN112953386B (en) * 2021-03-17 2024-01-26 中国科学院微小卫星创新研究院 Method for measuring volt-ampere characteristic of solar cell array of satellite
CN116243133A (en) * 2023-05-11 2023-06-09 中国科学院长春光学精密机械与物理研究所 Nondestructive prediction system and method for radiation damage resistance of semiconductor laser

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