CN206450788U - Radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods - Google Patents
Radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods Download PDFInfo
- Publication number
- CN206450788U CN206450788U CN201621467745.XU CN201621467745U CN206450788U CN 206450788 U CN206450788 U CN 206450788U CN 201621467745 U CN201621467745 U CN 201621467745U CN 206450788 U CN206450788 U CN 206450788U
- Authority
- CN
- China
- Prior art keywords
- test board
- semiconductor devices
- characteristic curve
- matrix switch
- source table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
The utility model is related to a kind of measuring system measured suitable for irradiation effects middle and long distance to semiconductor devices VA characteristic curve, and in particular to a kind of radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods.The measuring system includes control computer, source table, matrix switch, test board and irradiation plate；The control computer is connected with source table and matrix switch respectively；The source table, matrix switch and test board constitute test loop；The test board is connected with irradiation plate；The sense hi ports and sence lo ports of the source table and test board formation voltage measurement circuit；The source hi ports and source lo ports of the source table and test board formation current measurement circuit.The utility model changes the circuit relationships between long line resistance and semiconductor devices PN junction and volometer, the problem of long line resistance is in the measurement of radiation effect semiconductor devices VA characteristic curve has been properly settled from principle, higher measurement accuracy can be kept in comparatively wide current range.
Description
Technical field
The utility model is related to a kind of irradiation effects middle and long distance that is applied to semiconductor devices VA characteristic curve
The measuring system measured, and in particular to a kind of radiation effect semiconductor devices VA characteristic curve based on four leads methods is surveyed
Amount system.
Background technology
PN junction is minimum elementary cell in electronics circuit, therefore the semiconductor devices that is made up of a small number of PN junctions of research
Radiation effect, has important basic role for the development of radiation effect study mechanism.Semiconductor devices VA characteristic curve
It is the basis of extraction device sensitive parameter, therefore the measurement of semiconductor devices VA characteristic curve is ground in whole radiation effect mechanism
There is crucial fundamental position in studying carefully.
Because the long line test of the influence of radiation environment is difficult to avoid in radiation effect measurement.Measured in traditional double lead
In method (as shown in Figure 1), long lead resistance can influence the voltage measurement in the measurement of semiconductor devices VA characteristic curve.With electricity
The increase of stream, proportion of the pressure drop that long line resistance is caused in whole circuit pressure drop is increasing, the pressure even more than on PN junction
Drop so that measurement result is unreliable.Long lead resistance exist it is certain non-linear, and contact resistance in circuit have it is random
Property and uncontrollable feature so that long lead resistance is difficult to correct.In existing measuring method, the presence of long line resistance is significantly
The measurement range of electric current in semiconductor devices VA characteristic curve is limited, also just seriously limits what measuring system can be measured
The scope of semiconductor devices species and its VA characteristic curve, is unfavorable for the development of irradiation effects.
Utility model content
In order to solve the technical problem of long lead Resistance Influence measurement accuracy in traditional double lead mensuration, this practicality is new
Type provides a kind of radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods.
Technical solution of the present utility model is：A kind of radiation effect semiconductor devices volt-ampere based on four leads methods is special
Linearity curve measuring system, it is characterized in that：Including control computer, source table, matrix switch, test board and irradiation plate；Institute
Control computer is stated with source table and matrix switch to be connected；The source table, matrix switch and test board constitute test loop；It is described to survey
Test plate (panel) is connected with irradiation plate；The sense hi ports and sence lo ports of the source table are returned with test board formation voltage measurement
Road；The source hi ports and source lo ports of the source table and test board formation current measurement circuit.
Preferably, above-mentioned control computer is connected by GPIB cables with source table and matrix switch.
Preferably, above-mentioned test board is connected by split conductor or winding displacement with irradiation plate.
Preferably, 4 × 16 switch elements of the above-mentioned integrated two matrix modules formation of matrix switch.
Preferably, one end of above-mentioned test board connection irradiation plate and the tested circuit pin of irradiation plate are corresponded；Institute
State one end of test board connection matrix switch and the switch element of matrix switch is corresponded；The pin of test board and irradiation plate is total
Number of arrays of the number less than or equal to matrix switch.
The beneficial effects of the utility model are：The utility model changes long line resistance and semiconductor devices PN junction and electricity
Circuit relationships between volt-ammeter, have properly settled long line resistance special in radiation effect semiconductor devices volt-ampere from principle
The problem of in linearity curve measurement, higher measurement accuracy can be kept in comparatively wide current range.
Brief description of the drawings
Fig. 1 is traditional double lead test loop principle schematic.
Fig. 2 is that the lead of the utility model four tests double loop principle schematic.
Fig. 3 is the system composition schematic diagram of the utility model preferred embodiment.
Fig. 4 is the long short-term contrast schematic diagram for the diode I-V curve that four leads methods are measured.
Fig. 5 is the I-V curve of diode under the different neutron fluences that double lead method and four leads methods are measured.
Embodiment
Semiconductor devices VA characteristic curve measuring system based on four leads methods is by by traditional double lead mensuration
Expand as the tetrode method, constitute the double loop of current-voltage measurement, change long line resistance and semiconductor devices PN junction and
Circuit relationships between volometer so that long line resistance no longer turns into the shadow of the measuring precision under new circuit relationships
The factor of sound, so that the problem of long line resistance is in the measurement of semiconductor devices VA characteristic curve has been properly settled from principle,
The degree of accuracy of basic data measurement is improved, the development for irradiation effects is significant.
Referring to Fig. 2, current-voltage measurement double loop is respectively constituted in the tetrode method that the utility model is provided, so that
Change the circuit relationships between long line resistance and PN junction and current voltmeter.It is long in current loop under new circuit relationships
Line resistance is constituted and connected, therefore do not influence the measurement of electric current with PN junction, ammeter；Voltage circuit middle or long line resistance and PN junction are simultaneously
Connection, PN junction is in parallel with voltmeter, because the internal resistance of voltmeter is very big (100M Ω magnitudes), therefore the electric current in long line is in pA amounts
Level so that long line pressure drop is almost that 0 influence simultaneously to electric current in PN junction is also almost 0.
Referring to Fig. 3, the utility model preferred embodiment is lied prostrate using the semiconductor devices of source table, matrix switch as core instrument
Pacify the long line measuring system of characteristic curve.Whole measuring system mainly includes test board (test adaptor plate) and irradiates plate, according to treating
The pin distribution of device is surveyed, corresponding irradiation plate is made, you can realize radiation parameter lower semiconductor device VA characteristic curve
Measurement.
One end of test board connection irradiation plate should be corresponded with the tested circuit pin of irradiation plate；Connection matrix is switched
One end should be corresponded with the switch element of matrix switch；The total number pins of test board and irradiation plate should be not more than matrix switch
Number of arrays, pin should with 4 × 16 " 16 " connect.Sense hi, the sence lo of source table should be with measured device formation voltages
Measuring loop, source hi, source lo and measured device formation current measurement circuit.Four lines of source table should pass through test board
Connected with " 4 " of matrix switch 4 × 16.
The maximum current that general source table can be provided is 1.5A, and maximum voltage is 42V, and most of semiconductor can be covered substantially
The demand of device, it is ensured that the measuring system has stronger versatility.Two matrix modules (4 × 16 are integrated with matrix switch
Switch element) so that the system is measured while can completing to 32 two end element or 16 four end element.
Control computer (computer) can be while voltage input table and matrix switch, realize and constantly carry out " switch switches " ---
The function of " parameter testing ".Based on LabVIEW pattern development platforms, source table, matrix switch are combined together by making software,
Realize to automatically controlling for instrument and automatically saving for measurement result, while the time of measuring of every I-V curve can be recorded automatically.
The testing time is not only shortened by automatically controlling, the corresponding relation of semiconductor I-V curve and dose of radiation can be also set up, it is ensured that
The accuracy of radiation effect measurement.
Fig. 4 is predose respectively with being provided under 20 centimetres of short-terms and 30 meters of long lines with the utility model based on four leads methods
The volt-ampere of characteristic diode curve that measures of measuring system, Fig. 5 is respectively with traditional double lead method and this reality under 30 meters of long lines
The VA characteristic curve of diode under the different neutron fluences measured with new four leads method.It can be seen that from this two figures
Long line measurement causes the measurement knot under volt-ampere of characteristic diode curve substantial deviation short-term under high current in traditional double lead method
Really, the semiconductor devices VA characteristic curve scope that can be measured is greatly limit, and is easily caused to semiconductor devices
The wrong understanding of radiation effect, and the measurement result of the utility model long short-term in very wide current range is essentially coincided,
Maintain higher measurement accuracy.
Claims (5)
1. a kind of radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods, it is characterised in that：Bag
Include control computer, source table, matrix switch, test board and irradiation plate；The control computer respectively with source table and matrix switch
It is connected；The source table, matrix switch and test board constitute test loop；The test board is connected with irradiation plate；The source table
Sense hi ports and sence lo ports and test board formation voltage measurement circuit；The source hi ports of the source table and
Source lo ports and test board formation current measurement circuit.
2. the radiation effect semiconductor devices VA characteristic curve measurement system according to claim 1 based on four leads methods
System, it is characterised in that：The control computer is connected by GPIB cables with source table and matrix switch.
3. the radiation effect semiconductor devices VA characteristic curve measurement system according to claim 2 based on four leads methods
System, it is characterised in that：The test board is connected by split conductor or winding displacement with irradiation plate.
4. the radiation effect semiconductor devices VA characteristic curve measurement system according to claim 3 based on four leads methods
System, it is characterised in that：4 × 16 switch elements of the integrated two matrix modules formation of matrix switch.
5. the radiation effect semiconductor devices VA characteristic curve measurement system according to claim 4 based on four leads methods
System, it is characterised in that：One end of the test board connection irradiation plate and the tested circuit pin of irradiation plate are corresponded；It is described
One end of test board connection matrix switch and the switch element of matrix switch are corresponded；The total number pins of test board and irradiation plate
Less than or equal to the number of arrays of matrix switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621467745.XU CN206450788U (en) | 2016-12-29 | 2016-12-29 | Radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621467745.XU CN206450788U (en) | 2016-12-29 | 2016-12-29 | Radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206450788U true CN206450788U (en) | 2017-08-29 |
Family
ID=59673833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621467745.XU Active CN206450788U (en) | 2016-12-29 | 2016-12-29 | Radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206450788U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597247A (en) * | 2016-12-29 | 2017-04-26 | 西北核技术研究所 | Measuring system for volt-ampere characteristic curve of radiation effect semiconductor device based on four-probe method |
| CN109557442A (en) * | 2018-11-23 | 2019-04-02 | 哈尔滨工业大学 | A kind of linear circuit radiation defect extracting method |
| CN110632491A (en) * | 2019-09-12 | 2019-12-31 | 湘潭大学 | System and method for measuring volt-ampere characteristic curve of semiconductor laser after irradiation |
-
2016
- 2016-12-29 CN CN201621467745.XU patent/CN206450788U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106597247A (en) * | 2016-12-29 | 2017-04-26 | 西北核技术研究所 | Measuring system for volt-ampere characteristic curve of radiation effect semiconductor device based on four-probe method |
| CN109557442A (en) * | 2018-11-23 | 2019-04-02 | 哈尔滨工业大学 | A kind of linear circuit radiation defect extracting method |
| CN109557442B (en) * | 2018-11-23 | 2021-12-14 | 哈尔滨工业大学 | Linear circuit radiation defect extraction method |
| CN110632491A (en) * | 2019-09-12 | 2019-12-31 | 湘潭大学 | System and method for measuring volt-ampere characteristic curve of semiconductor laser after irradiation |
| CN110632491B (en) * | 2019-09-12 | 2022-03-04 | 湘潭大学 | System and method for measuring volt-ampere characteristic curve of semiconductor laser after irradiation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206450788U (en) | Radiation effect semiconductor devices VA characteristic curve measuring system based on four leads methods | |
| CN106597247A (en) | Measuring system for volt-ampere characteristic curve of radiation effect semiconductor device based on four-probe method | |
| CN103439537B (en) | Harmless formula solar cell current-voltage test macro sample clamp | |
| CN102495354B (en) | Testing method for circuit board testing system | |
| CN207946506U (en) | A kind of module for testing electronic load | |
| CN204758649U (en) | Probe detection tool | |
| CN105785131A (en) | Testing device and method for low ohm chip resistors | |
| CN106383271A (en) | Device and method for testing satellite initiating explosive device exploding bridge wire resistance | |
| CN105445557A (en) | High-flux resistivity testing device | |
| CN204788900U (en) | Solar simulator irradiance, irradiation homogeneity and stable detection device | |
| CN102769008B (en) | A kind of device surveyed Kelvin test loop increasing unit testing module | |
| CN105301516B (en) | One kind being convenient for bga chip power supply test jig and method | |
| CN102081150B (en) | 'Virtual complex impedance method'-based power frequency line parameter tester calibration device and method | |
| CN103323764B (en) | A kind of silicon PIN semiconductor detector Leakage Current Detector and detection method thereof | |
| CN203982644U (en) | Multifunction teaching circuit board | |
| CN103293362B (en) | DC ammeter and multimeter and apply the measuring method of this reometer or multimeter | |
| CN207366636U (en) | A kind of battery pole piece electric resistance test device | |
| CN201408234Y (en) | Electronic cable tester | |
| CN206945761U (en) | Probe card and test system | |
| CN104502830A (en) | Chip testing device | |
| CN112349339B (en) | System and method for remote dynamic test of instantaneous ionizing radiation effect of memory | |
| CN108037432A (en) | A kind of measuring method and device of wafer tube core on-state voltage drop | |
| CN204650860U (en) | A kind of modulus electricity experiment table | |
| CN204287409U (en) | A kind of apparatus for testing chip | |
| CN104181394A (en) | Resistivity measurement method of rock and ore specimen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |