CN112230081A - Equivalent LET calculation method for pulse laser single event effect test - Google Patents
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Abstract
The application discloses a pulse laser single event effect test equivalent LET calculation method. The calculation method calculates the deposition charge Q generated by the pulse laser incidence device according to the condition that the pulse laser and the heavy ions are equivalent to each other in the single event effect caused by the pulse laser and the heavy ions in the sensitive volume of the device when the deposited charge amounts of the pulse laser and the heavy ions in the sensitive volume of the device are equal to each otherLAnd obtaining the sensitive depth z of the device through a pulse laser test, wherein the equivalent LET of the pulse laser is as follows: LETL[MeV·cm2/mg]＝(Ep/ρ)×QL[pC]/z[μm]. The method and the device realize equivalent evaluation of the pulse laser and the heavy ions on the single event effect radiation damage of the device, and further expand the application of the pulse laser in the aspect of satellite radiation-resistant reinforcement technology.
Description
Technical Field
The application relates to the technical field of space radiation effect and reinforcement, in particular to a pulse laser single event effect test equivalent LET calculation method.
Background
Compared with heavy ion tests, the pulse laser has the advantages of low cost, easy repeated operation, no radiation hazard and the like, and gradually becomes a favorable substitute for single-particle effect heavy ion tests. Research shows that the pulse laser can induce single-particle effect through Single Photon Absorption (SPA) and two-photon absorption (TPA) to obtain space and time information characterizing the single-particle effect. Parameters of the existing device for evaluating the single event effect resistance are based on a heavy ion test, how to equate the test result of the pulse laser to the test result of the heavy ion is to make the pulse laser result directly comparable to the heavy ion result, and the parameters are hot spots and difficulties of the current pulse laser single event effect test research.
Currently, the general method of determining the pulsed laser equivalent LET is based on a purely empirical method of pulsed laser energy and heavy ion LET testing to cause the same circuit response of the device. Although the empirical method of pulse laser equivalent heavy ion LET has certain practicability, the method is closely related to some specific test parameters, the analysis process is complicated, and slight change of the test parameters can cause deviation of equivalent LET calculation, so that the calculation is inaccurate; meanwhile, when the charge distribution induced by the pulse laser and the heavy ions is input into a device with specific physical characteristics to analyze the single event effect response, a large amount of test data and device process data are needed, time and labor are consumed, and devices with different process types need to reconstruct a device model for repeated work.
Conversely, a quantitative analysis method that converts pulsed laser energy into an equivalent LET by comparatively analyzing the deposited charges induced by pulsed laser and heavy ions is a more general and feasible equivalent analysis approach. However, there are many difficulties in obtaining the pulse laser equivalent LET relationship based on the quantitative analysis method, and especially in the process of TPA inducing single event effect, the method of accurately calculating charge deposition under the conditions of accurate characteristics of pulse laser transmitted to the device and given test parameters can affect the quantitative analysis result. Therefore, based on a laser micro-dose and numerical analysis method, a pulse laser equivalent LET calculation method based on quantitative analysis of pulse laser and heavy ion induced deposition charges is provided.
Disclosure of Invention
The method is mainly used for solving the problem that pulse laser energy is equivalent to heavy ion LET in a pulse laser single event effect test, and the method is used for calculating the pulse laser equivalent LET based on quantitative analysis of the amount of deposited electric charge.
In order to achieve the above purpose, the embodiment of the present application provides a method for calculating an equivalent LET in a pulsed laser single event effect test.
According to the pulse laser single event effect test equivalent LET calculation method, the pulse laser equivalent LET is calculated according toLIn the calculation, when the amounts of electric charges deposited by the pulse laser and the heavy ions in the sensitive volume of the device are equal, the single event effect caused by the pulse laser and the heavy ions on the device is equivalent, and the method comprises the following steps:
(1) determining the sensitive area of the device according to the size of the device to be tested DUT;
(2) determining the sensitive depth z through the z-direction scanning of the pulse laser test;
(3) determining a sensitive volume according to the sensitive area and the sensitive depth;
(4) calculating the distribution density of the current carriers in the analysis device;
(5) carrying out integral calculation on the distribution density of the current carriers in the sensitive volume of the RPP parallelepiped model to obtain deposition charge QL；
(6) Equivalent LET when pulse laser induces single particle effectLThe values of (A) are:
LETL[MeV·cm2/mg]＝(Ep/ρ)×QL[pC]/z[μm]
in the formula, QLIs a laser induced deposition charge within the sensitive volume; epIs the average energy in the material that produces an electron-hole pair: ρ is the density of the material on which the laser is incident.
Optionally, the geometry of the sensitive volume is parallelepiped and the charge collection within the sensitive volume is uniform.
Alternatively, the sensitivity depth z is determined by the geometry of the device under test, when the charge collection depth of the device under test DUT is determined.
Alternatively, the sensitive depth z of the device under test is given by the charge collection experimental data of the heavy ions when the sensitive depth z is not well defined.
Optionally, heavy ion deposition of charge QHIThe relationship to the experimentally observed collected charge is:
QHI＝LETHI×z
sensitive depth z of QHIFor LETHIThe slope of (a).
Optionally, the material of the device under test DUT comprises silicon, gallium arsenide, silicon carbide or gallium nitride.
In the equivalent LET calculation method for the pulse laser single event effect test provided by the embodiment of the application, the deposition charges generated by pulse laser induction are quantitatively analyzed by constructing an RPP model of the equivalent LET, heavy ions and charge collection generated by the pulse laser induction are contrastively analyzed to obtain the equivalent LET value of the pulse laser, so that equivalent evaluation of the pulse laser and the heavy ions on the single event effect radiation damage of a device is realized, and the application of the pulse laser in the aspect of the satellite anti-radiation reinforcement technology is further expanded.
By adopting the equivalent LET calculation method for the pulse laser single event effect test, provided by the invention, the RPP model of the equivalent LET is utilized, and the equivalent LET value of the pulse laser, which is identical to the heavy ion test, can be obtained on the basis of the premise that the deposition charges of the pulse laser and the heavy ions in the sensitive volume are equal, so that on one hand, data reference can be provided for the heavy ion test parameter selection; on the other hand, the single event effect sensitivity of the device is preliminarily determined, reference is provided for screening and anti-radiation reinforcement design of the satellite device, and the engineering application of the pulse laser in the anti-radiation reinforcement design of the satellite is further expanded.
Detailed Description
In order to make the technical solutions of the present application better understood by those skilled in the art, the technical solutions of the present application will be clearly and completely described below in conjunction with the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that the terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover non-exclusive inclusions, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this application, the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", and the like indicate an orientation or positional relationship based on the present application. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "disposed," "connected," "disposed," and "communicating" are to be construed broadly. For example, "connected" may be a fixed connection, a detachable connection, or a unitary construction; can be mechanically connected, or electrically connected; may be directly connected, or indirectly connected through intervening media, or may be in communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail with reference to examples.
According to the pulse laser single event effect test equivalent LET calculation method, the pulse laser equivalent LET is calculated according toLIn the calculation, when the amounts of electric charges deposited by the pulse laser and the heavy ions in the sensitive volume of the device are equal, the single event effect caused by the pulse laser and the heavy ions on the device is equivalent, and the method comprises the following steps:
(1) determining the sensitive area of the device according to the size of the device to be tested DUT;
(2) determining the sensitive depth z through the z-direction scanning of the pulse laser test;
(3) determining a sensitive volume according to the sensitive area and the sensitive depth;
(4) calculating the distribution density of the current carriers in the analysis device;
(5) carrying out integral calculation on the distribution density of the current carriers in the sensitive volume of the RPP parallelepiped model to obtain deposition charge QL；
(6) Equivalent LET when pulse laser induces single particle effectLThe values of (A) are:
LETL[MeV·cm2/mg]＝(Ep/ρ)×QL[pC]/z[μm]
in the formula, QLIs a laser induced deposition charge (subscript L denotes "laser") within the sensitive volume; epIs the average energy to generate an electron-hole pair in a material, such as a silicon material, which has a value of 3.6 eV; ρ is the density of the material at which the laser is incident, in g/cm3。
In the method, pulse laser equivalent LET is obtained by depositing charges of pulse laser in the device, reference basis can be provided for selection of heavy ion test conditions of the device, and input parameters can also be provided for equivalence analysis of the pulse laser and the heavy ion test.
In particular, in some embodiments of the present application, the geometry of the sensitive volume is parallelepiped and the charge collection within the sensitive volume is uniform.
Sensitive volume to Q of DUTLAnd LETLIs critical and defines the upper and lower limits of the carrier distribution density (CD) integral operation, usually determined by the transverse and axial dimensions of the RPP model.
Specifically, the RPP lateral dimension is the sensitive area of the DUT. When the sensitive area is much larger than the carrier distribution area (such as a bulk silicon diode), the sensitive area is considered to be infinite; the RPP lateral dimension is the DUT geometry when the sensitive area is smaller than the carrier distribution area (e.g., large scale integrated circuits such as bulk silicon nMOS transistors, SOI nMOS transistors, etc.).
The RPP axial dimension is the sensitive depth z. For devices with well-defined charge collection depth (such as devices in SOI process, etc.), z is determined by the geometrical size of the device; for devices with no well-defined sensitivity depth, z is given by the charge collection experimental data for heavy ions (assuming that the charge collection efficiency can be assessed and measured and is constant). At this point, the heavy ions may deposit a charge (Q)HI) Correlated to the Collected Charge (CC) observed in the experiment. Then there are:
QHI＝LETHI×z
at this time, QHIFor LETHIThe slope of the sensor enables the sensitive depth z to be determined.
For devices where neither the sensitivity depth is defined, nor the charge collection efficiency is known, the sensitivity depth z can be determined by analyzing the "equivalent Collected Charge (CC)" produced by the pulsed laser. In the RPP model, this means that the deposition charge generated by the pulsed laser is equal to that generated by the heavy ions, then:
QL＝LETHI×z
the sensitivity depth z can then be determined by continually adjusting the correction z until all of the test data in the formula matches.
Specifically, in some embodiments of the present application, the material of the device under test DUT includes silicon, gallium arsenide, silicon carbide, or gallium nitride.
When a pulse laser single event effect test is carried out, the equivalent LET calculation method of the pulse laser single event effect is adopted. Assuming that the pulse laser is incident on a bulk silicon diode device, the density of the silicon material is 2.33g/cm3Average energy E of a silicon material to generate an electron-hole pairp3.6 eV. The sensitivity depth z is 1.1 mu m, and the simulation calculation obtains the charge Q deposited by pulse incidence in the deviceL13pC, then there are:
LETL＝(Ep/ρ)×QL/z＝18.26MeV·cm2/mg
by adopting the equivalent LET calculation method for the pulse laser single event effect test, which is provided by the application, the RPP model of the equivalent LET is utilized, and the equivalent LET value of the pulse laser, which is identical to the heavy ion test, can be obtained on the basis of the premise that the deposition charges of the pulse laser and the heavy ions in the sensitive volume are equal. On one hand, data reference can be provided for heavy ion test parameter selection; on the other hand, the single event effect sensitivity of the device is preliminarily determined, reference is provided for screening and anti-radiation reinforcement design of the satellite device, and engineering application of the pulse laser in the anti-radiation reinforcement design of the satellite is further expanded.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (6)
1. A pulse laser single event effect test equivalent LET calculation method is characterized in that according to the fact that the electric charge quantity of pulse laser and heavy ions deposited in a sensitive volume of a device is equal, the single event effect of the pulse laser and the heavy ions caused to the device is equivalent, and the method comprises the following steps:
(1) determining the sensitive area of the device according to the size of the device to be tested DUT;
(2) determining the sensitive depth z through the z-direction scanning of the pulse laser test;
(3) determining a sensitive volume according to the sensitive area and the sensitive depth;
(4) calculating the distribution density of the current carriers in the analysis device;
(5) carrying out integral calculation on the distribution density of the current carriers in the sensitive volume of the RPP parallelepiped model to obtain deposition charge QL；
(6) Equivalent LET when pulse laser induces single particle effectLThe values of (A) are:
LETL[MeV·cm2/mg]＝(Ep/ρ)×QL[pC]/z[μm]
in the formula, QLIs a laser induced deposition charge within the sensitive volume; epIs the average energy in the material that produces an electron-hole pair; ρ is the density of the material on which the laser is incident.
2. The method for calculating the equivalent LET of the pulse laser single event effect test according to claim 1, wherein the geometric shape of the sensitive volume is a parallelepiped, and the charge collection in the sensitive volume is uniform.
3. The method for calculating the equivalent LET in the pulsed laser single event effect test according to claim 1, wherein when the charge collection depth of the Device Under Test (DUT) is determined, the sensitivity depth z is determined by the geometric dimension of the device under test.
4. The method for calculating the equivalent LET of the pulsed laser single event effect test according to claim 1, wherein when the sensitive depth z of the device under test is not well defined, the sensitive depth z is given by the charge collection test data of heavy ions.
5. The method for calculating the equivalent LET of the pulsed laser single event effect test according to claim 4, wherein the heavy ion deposition charge QHIThe relationship to the experimentally observed collected charge is:
QHI＝LETHI×z
sensitive depth z of QHIFor LETHIThe slope of (a).
6. The method according to claim 1, wherein the material of the Device Under Test (DUT) comprises silicon, gallium arsenide, silicon carbide or gallium nitride.
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