CN105548770A - Pulse laser equivalent LET value calculating method for SOI device - Google Patents
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Abstract
本发明涉及一种脉冲激光等效LET值检测方法,包括以下步骤:在去除SOI器件硅衬底之后,对SOI器件进行辐照扫描,得到SOI器件发生单粒子效应的入射激光能量;根据空气、埋氧层和硅的折射率、激光从空气到埋氧层的反射和透射系数、从埋氧层到空气的反射透射系数、从埋氧层到硅的反射和透射系数以及从硅到埋氧层的反射和透射系数,计算激光穿过SOI器件的埋氧层的能量透射率;根据到达灵敏区时的激光光斑半径和灵敏区的横向尺寸计算光斑影响参数;根据所述入射激光能量、能量透射率和光斑影响参数确定脉冲激光等效LET值。所述方法能够快速、低成本、更为准确地获得器件单粒子效应敏感度的关键指标LET值。
The invention relates to a pulse laser equivalent LET value detection method, comprising the following steps: after the silicon substrate of the SOI device is removed, the SOI device is irradiated and scanned to obtain the incident laser energy at which the single event effect of the SOI device occurs; according to air, Refractive index of buried oxide layer and silicon, reflection and transmission coefficient of laser from air to buried oxide layer, reflection and transmission coefficient from buried oxide layer to air, reflection and transmission coefficient from buried oxide layer to silicon, and from silicon to buried oxygen layer The reflection and transmission coefficients of the layer are used to calculate the energy transmittance of the laser passing through the buried oxide layer of the SOI device; the spot influence parameters are calculated according to the laser spot radius when reaching the sensitive area and the lateral size of the sensitive area; according to the incident laser energy, energy The transmittance and spot influence parameters determine the equivalent LET value of the pulsed laser. The method can obtain the key index LET value of the device single event effect sensitivity rapidly, at low cost and more accurately.
Description
技术领域technical field
本发明涉及空间辐射技术领域,特别是涉及一种SOI器件的脉冲激光等效LET值检测方法。The invention relates to the technical field of space radiation, in particular to a pulse laser equivalent LET value detection method of an SOI device.
背景技术Background technique
单粒子效应是影响器件空间可靠性的最重要的电离辐射效应之一,严重威胁航天器在轨的安全可靠运行。器件抗单粒子效应特性的评估一般采用高能重离子加速器和质子加速器进行。但由于重离子、质子加速器等大型试验装置的运行和操作的实际问题,往往会导致单粒子效应评估试验的周期和成本大幅提高,甚至严重阻碍器件的正常研制和空间任务的顺利完成。相对与加速器大型试验装置而言,脉冲激光模拟器件单粒子效应试验手段具有精确的单粒子效应空间和时间分辨特性,能量连续可调,无放射性,无须抽真空,操作便捷,试验效率高,成本低等特点。因而脉冲激光作为有效的单粒子效应评估方式在国内外都得到了广泛的应用,已经成为单粒子效应特性评估和防护设计验证的有效手段。近年来,国内外都建立了脉冲激光模拟单粒子效应试验装置,形成了快速、成本低的器件单粒子效应敏感度评估能力。The single event effect is one of the most important ionizing radiation effects that affect the space reliability of devices, and it seriously threatens the safe and reliable operation of spacecraft in orbit. The evaluation of device resistance to single event effects is generally carried out using high-energy heavy ion accelerators and proton accelerators. However, due to practical problems in the operation and operation of large-scale test devices such as heavy ions and proton accelerators, the cycle and cost of single-event effect evaluation tests will often be greatly increased, and even seriously hinder the normal development of devices and the smooth completion of space missions. Compared with the large-scale accelerator test device, the single event effect test method of pulsed laser simulation device has precise single event effect space and time resolution characteristics, continuously adjustable energy, no radioactivity, no need for vacuuming, convenient operation, high test efficiency, and low cost. low-level features. Therefore, as an effective single event effect evaluation method, pulsed laser has been widely used at home and abroad, and has become an effective means for single event effect evaluation and protection design verification. In recent years, pulsed laser simulation single event effect test devices have been established at home and abroad, forming a fast and low-cost device single event effect sensitivity evaluation capability.
LET(LinearEnergyTransfer,线性能量转移)值是评价宇航电子器件单粒子效应敏感性的关键工程技术指标之一。由于脉冲激光、重离子诱发器件单粒子效应的物理机制不完全相同,而且在实际试验中,聚焦后的激光光斑尺寸受到激光波长、聚焦装置、光学衍射等限制,激光的电离径迹宽度比重离子的电离径迹宽度大得多。另外,随着器件集成度的提高,器件正面金属层越来越密集,脉冲激光正面入射辐照器件的试验技术受到很大限制,而脉冲激光背部辐照器件的试验技术得到广泛应用,但对于激光背部辐照器件的情况,器件的多层结构会显著影响激光能量的传输。这些使得准确计算脉冲激光能量诱发单粒子效应的对应等效LET值,成为制约脉冲激光模拟单粒子效应试验方法在工程实践中应用的主要技术问题。LET (LinearEnergyTransfer, linear energy transfer) value is one of the key engineering technical indicators to evaluate the sensitivity of aerospace electronic devices to single event effects. Because the physical mechanism of the single event effect of the pulsed laser and the heavy ion induced device is not completely the same, and in the actual experiment, the laser spot size after focusing is limited by the laser wavelength, focusing device, optical diffraction, etc., the ionization track width of the laser is larger than that of the heavy ion The ionization track width of is much larger. In addition, with the improvement of device integration, the metal layer on the front side of the device is becoming more and more dense, the test technology of pulsed laser front incident irradiation device is greatly limited, and the test technology of pulsed laser back irradiation device is widely used, but for In the case of laser back-irradiated devices, the multilayer structure of the device can significantly affect the delivery of laser energy. These make the accurate calculation of the corresponding equivalent LET value of the single event effect induced by the pulsed laser energy become the main technical problem restricting the application of the pulsed laser simulation single event effect test method in engineering practice.
SOI(SilicononInsulator,绝缘体衬底上的硅)与传统体硅器件相比,在器件和衬底之间通过一层隐埋氧化层隔开,器件仅制造在表层很薄的硅膜中,如图1所示。图1中,101为源区,102为栅极,103为漏区,104为埋氧层,105为衬底。STI(ShallowTrenchIsolation)是SOI结构工艺中的浅沟槽隔离区。n指的是SOI结构中的n型掺杂区域。这种独特的结构使得SOI器件没有传统体硅MOS(Metal-Oxide-Semiconductor,金属-氧化物-半导体)器件的闩锁效应,有较好的抗辐照能力。但由于SOI器件的结构于传统体硅工艺器件的结构不同,现有相关的脉冲激光等效LET值计算方法是基于典型体硅工艺器件结构建立的,当应用于SOI器件时,准确性较低。Compared with traditional bulk silicon devices, SOI (Silicon on Insulator, silicon on insulator substrate) is separated by a buried oxide layer between the device and the substrate, and the device is only manufactured in a very thin silicon film on the surface, as shown in the figure 1. In FIG. 1 , 101 is a source region, 102 is a gate, 103 is a drain region, 104 is a buried oxide layer, and 105 is a substrate. STI (ShallowTrenchIsolation) is a shallow trench isolation region in the SOI structure process. n refers to an n-type doped region in the SOI structure. This unique structure makes SOI devices have no latch-up effect of traditional bulk silicon MOS (Metal-Oxide-Semiconductor, Metal-Oxide-Semiconductor) devices, and has better radiation resistance. However, because the structure of SOI devices is different from that of traditional bulk silicon process devices, the existing calculation methods for equivalent LET values of pulsed lasers are based on typical bulk silicon process device structures. When applied to SOI devices, the accuracy is low .
发明内容Contents of the invention
基于此,有必要针对现有技术准确性较低的问题,提供一种SOI器件的脉冲激光等效LET值检测方法。Based on this, it is necessary to provide a pulsed laser equivalent LET value detection method for SOI devices to solve the problem of low accuracy in the prior art.
一种SOI器件的脉冲激光等效LET值检测方法,包括以下步骤:A pulse laser equivalent LET value detection method of an SOI device, comprising the following steps:
在去除SOI器件硅衬底之后,对SOI器件进行辐照扫描,得到SOI器件发生单粒子效应的入射激光能量;After removing the silicon substrate of the SOI device, the SOI device is irradiated and scanned to obtain the incident laser energy for the single event effect of the SOI device;
根据空气、埋氧层和硅的折射率、激光从空气到埋氧层的反射和透射系数、从埋氧层到空气的反射透射系数、从埋氧层到硅的反射和透射系数以及从硅到埋氧层的反射和透射系数,计算激光穿过SOI器件的埋氧层的能量透射率;According to the refractive index of air, buried oxide layer and silicon, the reflection and transmission coefficient of laser from air to buried oxide layer, the reflection and transmission coefficient from buried oxide layer to air, the reflection and transmission coefficient from buried oxide layer to silicon, and the reflection and transmission coefficient from silicon Reflection and transmission coefficients to the buried oxide layer, calculate the energy transmittance of the laser passing through the buried oxide layer of the SOI device;
根据到达灵敏区时的激光光斑半径和灵敏区的横向尺寸计算光斑影响参数;According to the laser spot radius when reaching the sensitive area and the lateral size of the sensitive area, the spot influence parameter is calculated;
根据所述入射激光能量、能量透射率和光斑影响参数确定脉冲激光等效LET值。The equivalent LET value of the pulsed laser is determined according to the incident laser energy, energy transmittance and spot influence parameters.
上述SOI器件的脉冲激光等效LET值检测方法,通过对去除硅衬底的SOI器进行辐照扫描,计算SOI器件的入射激光能量、激光穿过SOI器件的埋氧层的能量透射率以及光斑影响参数,并根据所述入射激光能量、能量透射率和光斑影响参数确定脉冲激光等效LET值,该方法可以用于航天、航空以及地面电子系统中SOI器件的脉冲激光模拟单粒子效应试验评估中,快速、低成本、更为准确地获得器件单粒子效应敏感度的关键指标LET值。The pulse laser equivalent LET value detection method of the above-mentioned SOI device is to calculate the incident laser energy of the SOI device, the energy transmittance of the laser passing through the buried oxide layer of the SOI device, and the light spot by performing irradiation scanning on the SOI device from which the silicon substrate has been removed. Influence parameters, and determine the pulse laser equivalent LET value according to the incident laser energy, energy transmittance and spot influence parameters, this method can be used for pulse laser simulation single event effect test evaluation of SOI devices in aerospace, aviation and ground electronic systems Among them, the LET value, a key indicator of device single event effect sensitivity, can be obtained quickly, at low cost and more accurately.
附图说明Description of drawings
图1为SOI结构图;Figure 1 is a SOI structure diagram;
图2为现有技术的方法示意图;Fig. 2 is the method schematic diagram of prior art;
图3为本发明的SOI器件的脉冲激光等效LET值计算方法流程图;Fig. 3 is the flow chart of calculation method of pulsed laser equivalent LET value of SOI device of the present invention;
图4为激光背部入射去除衬底的SOI器件示意图;Fig. 4 is a schematic diagram of an SOI device in which the laser back incident removes the substrate;
图5为激光穿过埋氧层发生多光束干涉示意图;Fig. 5 is a schematic diagram of multi-beam interference of laser light passing through the buried oxide layer;
图6为800nm激光的透射率随埋氧层厚度的调制变化示意图;Figure 6 is a schematic diagram of the modulation variation of the transmittance of the 800nm laser with the thickness of the buried oxide layer;
图7为能量高斯分布的激光光斑覆盖单粒子效应灵敏区的一维示意图。Fig. 7 is a one-dimensional schematic diagram of a laser spot with energy Gaussian distribution covering a single event effect sensitive area.
具体实施方式detailed description
下面结合附图对本发明的SOI器件的脉冲激光等效LET值计算方法的实施例进行描述。An embodiment of the method for calculating the pulsed laser equivalent LET value of the SOI device of the present invention will be described below with reference to the accompanying drawings.
如图2所示,现有的脉冲激光等效LET计算方法针对典型体硅工艺器件,在激光背部辐照器件的试验方式下,考虑脉冲激光在芯片衬底材料中传输过程的能量衰减及累积,分析器件正面金属布线和衬底内表面对激光多次振荡反射造成的影响,计算灵敏区域内部对单粒子效应有贡献的所有脉冲激光能量值。然后根据激光能量与重离子LET值的等效原理计算等效LET。图2中,201为器件背部,202为激光束,203为硅衬底,204为有源区,205为激光焦平面,206为器件正面,207为钝化层,208为金属层。As shown in Figure 2, the existing pulsed laser equivalent LET calculation method is aimed at typical bulk silicon process devices, in the test mode of laser backside irradiation devices, considering the energy attenuation and accumulation of the pulsed laser during the transmission process in the chip substrate material , analyze the impact of the metal wiring on the front of the device and the inner surface of the substrate on the reflection of multiple laser oscillations, and calculate the energy values of all pulsed lasers that contribute to the single event effect in the sensitive area. Then the equivalent LET is calculated according to the equivalent principle of laser energy and heavy ion LET value. In Fig. 2, 201 is the back of the device, 202 is the laser beam, 203 is the silicon substrate, 204 is the active area, 205 is the laser focal plane, 206 is the front of the device, 207 is the passivation layer, 208 is the metal layer.
现有技术的技术方案是基于典型体硅工艺器件结构建立的,SOI器件的结构不同于典型体硅工艺器件的结构,因而对于SOI器件该技术并不适用。现有技术的一大特征是考虑了激光在器件衬底内的多次震荡反射,但其计算基于激光传输和器件的理想条件,而且计算过程中所涉及的参数在实际应用中较难测量。随着器件工艺尺寸的缩减,激光光斑的尺寸远大于单粒子效应敏感区的尺寸,因而在脉冲激光能量等效LET的计算中需要考虑激光光斑尺寸的影响,但现有技术并未考虑。The technical solution in the prior art is established based on the structure of a typical bulk silicon process device, and the structure of an SOI device is different from that of a typical bulk silicon process device, so this technology is not applicable to an SOI device. A major feature of the existing technology is the consideration of multiple oscillations and reflections of the laser in the device substrate, but its calculation is based on the ideal conditions of laser transmission and devices, and the parameters involved in the calculation process are difficult to measure in practical applications. With the reduction of the device process size, the size of the laser spot is much larger than the size of the single event effect sensitive area. Therefore, the influence of the laser spot size needs to be considered in the calculation of the equivalent LET of pulsed laser energy, but the existing technology does not consider it.
为解决上述问题,本发明提供一种脉冲激光等效LET值计算方法。如图3所示,所述脉冲激光等效LET值计算方法可包括以下步骤:In order to solve the above problems, the present invention provides a method for calculating the equivalent LET value of a pulsed laser. As shown in Figure 3, the pulsed laser equivalent LET value calculation method may include the following steps:
S1,在去除SOI器件硅衬底之后,对SOI器件进行辐照扫描,得到SOI器件发生单粒子效应的入射激光能量;S1, after removing the silicon substrate of the SOI device, the SOI device is irradiated and scanned to obtain the incident laser energy for the single event effect of the SOI device;
与图2所示激光传输过程类似,脉冲激光背部入射辐照SOI器件。由于SOI存在空气/Si(硅)衬底、Si衬底/SiO2(二氧化硅)等不同介质的界面,激光会在界面处发生反射现象,继而在Si衬底内产生多次震荡反射。器件Si衬底的厚度一般为几百微米,激光穿过这么厚的Si会发生严重的吸收衰减现象,最终严重影响入射到器件有源区的激光能量。假设激光的入射能量是E0,反射次数为n,第i次穿越Si层后的总能量损失为ΔEi,i=1,2,…,n,则最终的出射激光能量为E0-ΔE2n。这些使得激光能量传输计算和测试过程变得复杂,难以得到准确结果。对于Si衬底对入射激光能量的影响,现有的计算方法是基于激光能量传输和器件的理想条件,而且计算过程中所涉及的参数在实际应用中较难测量,这对脉冲激光等效LET的计算造成了很大的误差。因此,在对SOI器件进行辐照扫描之前,可以去除SOI器件硅衬底,从而提高计算精确度。可通过刻蚀去除SOI器件硅衬底。Similar to the laser delivery process shown in Figure 2, the SOI device is irradiated by pulsed laser backside incidence. Because SOI has interfaces of different media such as air/Si (silicon) substrate, Si substrate/SiO 2 (silicon dioxide), etc., the laser will reflect at the interface, and then multiple oscillation reflections will occur in the Si substrate. The thickness of the Si substrate of the device is generally several hundred micrometers. When the laser passes through such a thick Si, serious absorption and attenuation will occur, which will seriously affect the laser energy incident on the active region of the device. Assuming that the incident energy of the laser is E0, the number of reflections is n, the total energy loss after passing through the Si layer for the i-th time is ΔEi, i=1, 2,...,n, then the final outgoing laser energy is E0-ΔE2n. These complicate the calculation and testing process of laser energy transmission, making it difficult to obtain accurate results. For the influence of Si substrate on the incident laser energy, the existing calculation methods are based on the ideal conditions of laser energy transmission and devices, and the parameters involved in the calculation process are difficult to measure in practical applications, which is equivalent to the pulsed laser LET The calculation caused a large error. Therefore, before performing irradiation scanning on the SOI device, the silicon substrate of the SOI device can be removed, thereby improving calculation accuracy. The SOI device silicon substrate can be removed by etching.
XeF2(二氟化氙)是一种对Si进行等离子体刻蚀、反应刻蚀中常用的工作气体。在刻蚀中,XeF2气体会吸附在硅表面,即使在没有外部能量的条件下,XeF2也会自发分解产生氙气和氟,而氟可在室温下对硅片进行较高速率的刻蚀。XeF2刻蚀的主要优点为:首先它是一种干法刻蚀,其刻蚀反应产物均可由真空系统抽除,基本没有刻蚀污染;其次这种刻蚀对许多材料具有很高的选择比,例如二氧化硅、氮化硅、铝及光刻胶等,其中XeF2对二氧化硅刻蚀选择比都可高达1000:1。SOI器件的埋氧层一般为SiO2材料。因此,XeF2具有对Si/SiO2很高的刻蚀选择比的特性非常适用于刻蚀去除SOI器件的Si衬底。XeF 2 (xenon difluoride) is a commonly used working gas in plasma etching and reactive etching of Si. During etching, XeF 2 gas will be adsorbed on the silicon surface, and even in the absence of external energy, XeF 2 will spontaneously decompose to produce xenon and fluorine, and fluorine can etch silicon wafers at a relatively high rate at room temperature . The main advantages of XeF 2 etching are: firstly, it is a dry etching, and its etching reaction products can be pumped out by a vacuum system, and there is basically no etching pollution; secondly, this etching has a high selectivity for many materials. Ratio, such as silicon dioxide, silicon nitride, aluminum and photoresist, etc., among which the etching selectivity ratio of XeF 2 to silicon dioxide can be as high as 1000:1. The buried oxide layer of SOI devices is generally SiO 2 material. Therefore, XeF 2 has a high etching selectivity to Si/SiO 2 and is very suitable for etching and removing Si substrates of SOI devices.
利用XeF2反应刻蚀去除SOI器件Si衬底的基本流程可包括如下步骤:The basic process of removing the Si substrate of SOI devices by XeF2 reactive etching may include the following steps:
首先,可通过酸腐蚀开封方法将SOI器件背部开封。对于常见的塑封和金属封装器件一般采用酸腐蚀开封的方法。First, the back of the SOI device can be desealed by an acid etch deseal method. For common plastic-encapsulated and metal-encapsulated devices, the method of acid corrosion and unsealing is generally used.
然后,可在经开封的SOI器件正面采用灌封胶进行填充。通过这种方式可保证XeF2反应刻蚀过程中器件固定不受损伤。Then, the front side of the unsealed SOI device can be filled with potting compound. In this way, it can ensure that the device is not damaged during the XeF 2 reactive etching process.
最后,可将经填充的SOI器件放入XeF2反应刻蚀装置中刻蚀,直到SOI器件衬底硅材料全部刻蚀去除,露出埋氧层二氧化硅表面。Finally, the filled SOI device can be etched in a XeF 2 reactive etching device until all the silicon material on the substrate of the SOI device is etched away, exposing the surface of the buried oxide silicon dioxide layer.
如图4示意,激光背部入射辐照去除Si衬底后的SOI器件,完全避免了衬底对激光入射的反射、折射、吸收衰减等作用。在图4中,401表示激光,402为Si衬底,403为埋氧层,404为有源区,405为环氧树脂。As shown in Figure 4, the SOI device after removing the Si substrate by laser back incident irradiation completely avoids the reflection, refraction, absorption attenuation and other effects of the substrate on the laser incident. In FIG. 4 , 401 denotes a laser, 402 denotes a Si substrate, 403 denotes a buried oxide layer, 404 denotes an active region, and 405 denotes an epoxy resin.
对于脉冲激光模拟器件单粒子效应试验,一般通过步进扫描测试的方法对整个测试器件进行辐照扫描,最终获得器件发生单粒子效应的入射激光能量E0。激光能量通过适用于相应激光波长的激光能量计进行测量。For the single event effect test of the pulsed laser simulation device, the whole test device is generally irradiated and scanned by the step-scan test method, and finally the incident laser energy E 0 for the single event effect of the device is obtained. Laser power is measured with a laser power meter adapted to the respective laser wavelength.
S2,根据空气、埋氧层和硅的折射率、激光从空气到埋氧层的反射和透射系数、从埋氧层到空气的反射透射系数、从埋氧层到硅的反射和透射系数以及从硅到埋氧层的反射和透射系数,计算激光穿过SOI器件的埋氧层的能量透射率;S2, according to the refractive index of air, buried oxide layer and silicon, the reflection and transmission coefficient of laser from air to buried oxide layer, the reflection and transmission coefficient from buried oxide layer to air, the reflection and transmission coefficient from buried oxide layer to silicon, and From the reflection and transmission coefficients of silicon to the buried oxide layer, calculate the energy transmittance of the laser through the buried oxide layer of the SOI device;
具体地,计算激光穿过SOI器件的埋氧层的能量透射率的步骤可包括:Specifically, the step of calculating the energy transmittance of the laser passing through the buried oxide layer of the SOI device may include:
计算两束相邻透射光束的相位差;Calculate the phase difference of two adjacent transmitted beams;
根据所述相位差计算总的透射光束的复振幅;calculating the complex amplitude of the total transmitted beam from said phase difference;
根据透射光束的复振幅与入射光束的振幅计算激光的透射系数;Calculate the transmission coefficient of the laser according to the complex amplitude of the transmitted beam and the amplitude of the incident beam;
根据所述透射系数计算所述能量透射率。The energy transmittance is calculated according to the transmittance coefficient.
如图4所示,对于去除Si衬底后的SOI器件,激光背部入射到埋氧层(例如,可以是SiO2)表面,穿过埋氧层后入射到器件有源区。根据激光传输原理,由于存在空气/埋氧层和埋氧层/Si两种界面,激光在其传输路径上会发生多次反射、折射现象。由于埋氧层的厚度一般为几百纳米,一般小于所激光试验所采用的激光波长,因而穿过埋氧层的激光束会产生多光束干涉,埋氧层对激光能量的透射率有调制作用。对于脉冲激光等效LET计算首先应确定埋氧层对激光能量的影响,即计算激光穿过埋氧层的能量透射率T。As shown in FIG. 4 , for the SOI device after the Si substrate is removed, the laser is incident on the surface of the buried oxide layer (for example, SiO 2 ) from the back, and then enters the active region of the device after passing through the buried oxide layer. According to the principle of laser transmission, due to the existence of two interfaces: air/buried oxide layer and buried oxide layer/Si, the laser will experience multiple reflections and refractions on its transmission path. Since the thickness of the buried oxide layer is generally several hundred nanometers, which is generally smaller than the laser wavelength used in the laser test, the laser beam passing through the buried oxide layer will produce multi-beam interference, and the buried oxide layer has a modulating effect on the transmittance of laser energy. . For the equivalent LET calculation of pulsed laser, the influence of the buried oxide layer on the laser energy should be determined first, that is, the energy transmittance T of the laser passing through the buried oxide layer should be calculated.
由于激光模拟单粒子效应试验的辐照方式是激光垂直入射器件背面,在计算激光穿过埋氧层的透射率时也只考虑正入射情形。如图5所示,设空气501、埋氧层502和Si503的折射率分别为n0,n,nS,设激光从空气到埋氧层的反射和透射系数为r1和t1,反方向从埋氧层到空气的反射透射系数为r′1和t′1,r1=-r′1;从埋氧层到Si的反射和透射系数为r2和t2,从Si到埋氧层的反射和透射系数为r′2和t'2,r2=-r′2,埋氧层厚度为d。入射光束的振幅为E0i,,略去共同的初始相位,两束相邻透射光束的相位差为:Since the irradiation method of the laser simulation single event effect test is that the laser is vertically incident on the back of the device, only the normal incident situation is considered when calculating the transmittance of the laser through the buried oxide layer. As shown in Fig. 5, set the refractive index of air 501, buried oxide layer 502 and Si503 as n 0 , n, n S respectively, set the reflection and transmission coefficients of the laser from air to buried oxide layer as r 1 and t 1 , and reflect The reflection and transmission coefficients from buried oxide layer to air are r′ 1 and t′ 1 , r 1 =-r′ 1 ; the reflection and transmission coefficients from buried oxide layer to Si are r 2 and t 2 , and from Si to buried The reflection and transmission coefficients of the oxygen layer are r' 2 and t' 2 , r 2 =-r' 2 , and the thickness of the buried oxide layer is d. The amplitude of the incident beam is E 0i , omitting the common initial phase, the phase difference of two adjacent transmitted beams is:
式中,k为激光光波传输的波矢,数值大小等于2πn/λ,λ为激光在真空中的波长。总的透射光束复振幅为各透射光束的振幅之和:In the formula, k is the wave vector of the laser light wave transmission, the value is equal to 2πn/λ, and λ is the wavelength of the laser in vacuum. The total complex amplitude of the transmitted beam is the sum of the amplitudes of the individual transmitted beams:
则激光的透射系数为:Then the transmission coefficient of the laser is:
根据菲涅耳公式:According to the Fresnel formula:
透射率T为:The transmittance T is:
并将各射系数r1、r2和透射系数t1、t2代入公式(5)可得最终结果:And substituting the respective reflection coefficients r 1 , r 2 and transmission coefficients t 1 , t 2 into formula (5), the final result can be obtained:
以激光模拟单粒子效应常见的波长为800nm激光为例,空气的折射率为1,埋氧层的折射率为1.5,Si的折射率为3.65,计算得到的激光穿过埋氧层的透射率随埋氧层厚度的调制变化如图6所示。Taking the 800nm laser, which is a common wavelength for laser simulation of single event effects, as an example, the refractive index of air is 1, the refractive index of the buried oxide layer is 1.5, and the refractive index of Si is 3.65. The calculated transmittance of the laser through the buried oxide layer The modulation changes with the thickness of the buried oxide layer are shown in Figure 6.
S3,根据到达灵敏区时的激光光斑半径和灵敏区的横向尺寸计算光斑影响参数;S3, calculating the spot influence parameter according to the laser spot radius when reaching the sensitive area and the lateral size of the sensitive area;
随着器件工艺尺寸的缩减,对于亚微米以至更小工艺尺寸的器件,激光光斑的尺寸远大于单粒子效应灵敏区的尺寸。例如,某典型的90nm工艺的SOISRAM(StaticRandomAccessMemory,静态随机存取存储器),单粒子翻转灵敏区的尺寸为0.2微米,而激光聚焦光斑的尺寸受限于激光波长以及激光传输过程中衍射作用等因素的影响,例如对于常用的波长为590nm的激光,聚焦光斑的直径要大于1微米。因而在脉冲激光能量等效LET的计算中必须考虑激光光斑尺寸对激光能量沉积的影响,用光斑影响参数F表示。With the shrinking of the device process size, for devices with sub-micron or even smaller process sizes, the size of the laser spot is much larger than the size of the single event effect sensitive area. For example, in a typical 90nm process SOISRAM (Static Random Access Memory), the size of the single event flipping sensitive area is 0.2 microns, and the size of the laser focus spot is limited by factors such as the laser wavelength and the diffraction effect during laser transmission. For example, for a commonly used laser with a wavelength of 590nm, the diameter of the focused spot should be greater than 1 micron. Therefore, the influence of laser spot size on laser energy deposition must be considered in the calculation of pulsed laser energy equivalent LET, which is represented by the spot influence parameter F.
图7是激光光斑覆盖单粒子效应灵敏区的一维示意图,激光光斑的能量分布在横向上为高斯分布。在图7中,701表示单粒子效应灵敏区,702表示激光光斑覆盖的区域,703表示Si有源区,704表示SiO2埋氧层。设激光光斑的中心在单粒子效应灵敏区的中心一致,则在单粒子效应灵敏区内的二维的激光能量分布函数为:Fig. 7 is a one-dimensional schematic diagram of the laser spot covering the single event effect sensitive area, and the energy distribution of the laser spot is a Gaussian distribution in the lateral direction. In Fig. 7, 701 indicates the single event effect sensitive area, 702 indicates the area covered by the laser spot, 703 indicates the Si active area, and 704 indicates the SiO 2 buried oxide layer. Assuming that the center of the laser spot is consistent with the center of the single event effect sensitive area, the two-dimensional laser energy distribution function in the single event effect sensitive area is:
式中,E为入射到灵敏区内的激光脉冲的能量,x和y为激光光斑在灵敏区内的坐标,ω为到达灵敏区时的激光光斑半径,因为灵敏区的厚度非常小,例如典型的90nmSOI器件的灵敏区厚度约为70nm,光斑尺寸在纵向上的变化可以忽略,因而ω为常数。在灵敏区内有效的激光能量就是激光能量分布在灵敏区内的积分:In the formula, E is the energy of the laser pulse incident into the sensitive area, x and y are the coordinates of the laser spot in the sensitive area, ω is the radius of the laser spot when it reaches the sensitive area, because the thickness of the sensitive area is very small, such as a typical The thickness of the sensitive area of the 90nm SOI device is about 70nm, and the change of the spot size in the longitudinal direction can be ignored, so ω is a constant. The effective laser energy in the sensitive area is the integral of the laser energy distribution in the sensitive area:
式中,a和b为灵敏区的横向尺寸,一般根据器件的工艺确定,例如CMOS(ComplementaryMetalOxideSemiconductor,互补金属氧化物半导体)SRAM单粒子翻转的灵敏区尺寸是截至NMOS(N-Metal-Oxide-Semiconductor,N型金属-氧化物-半导体)和PMOS(P-Metal-Oxide-Semiconductor,P型金属-氧化物-半导体)漏极区域的尺寸。上式可以写为:In the formula, a and b are the lateral dimensions of the sensitive area, which are generally determined according to the process of the device. For example, the size of the sensitive area of CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) SRAM single event flipping is up to NMOS (N-Metal-Oxide-Semiconductor , N-type metal-oxide-semiconductor) and PMOS (P-Metal-Oxide-Semiconductor, P-type metal-oxide-semiconductor) drain region size. The above formula can be written as:
Esv=E·F(9)E sv =E·F(9)
则光斑尺寸对激光能量沉积的影响的参数F为:Then the parameter F of the effect of the spot size on the laser energy deposition is:
以上述波长为590nm的激光为例,激光光斑半径为0.83微米,而单粒子翻转灵敏区的横向尺寸为0.2微米,则考虑光斑尺寸对激光能量沉积影响,参数F的计算结果约为0.034。可以看出,考虑光斑尺寸后有效的激光沉积能量为原来的3.4%,反之,如果不考虑激光光斑尺寸的影响,将对脉冲激光能量等效LET的计算产生极大的误差。Taking the above-mentioned laser with a wavelength of 590nm as an example, the laser spot radius is 0.83 microns, and the lateral size of the single particle inversion sensitive area is 0.2 microns. Considering the influence of the spot size on the laser energy deposition, the calculation result of the parameter F is about 0.034. It can be seen that after considering the spot size, the effective laser deposition energy is 3.4% of the original. On the contrary, if the influence of the laser spot size is not considered, a huge error will be generated in the calculation of the equivalent LET of the pulsed laser energy.
S4,根据所述入射激光能量、能量透射率和光斑影响参数确定脉冲激光等效LET值。S4. Determine the equivalent LET value of the pulsed laser according to the incident laser energy, energy transmittance, and spot influence parameters.
根据LET值的定义式:According to the definition of LET value:
ρ为入射半导体材料的密度。脉冲激光穿过埋氧层进入Si有源区,在激光能量线性吸收机制下,吸收一个光子产生一个电子空穴对,激光能量随入射深度x的衰减规律服从Beer定律,则脉冲激光等效重离子LET值为:ρ is the density of the incident semiconductor material. The pulsed laser passes through the buried oxide layer and enters the Si active region. Under the laser energy linear absorption mechanism, one photon is absorbed to generate an electron-hole pair. The attenuation law of the laser energy with the incident depth x obeys Beer's law, and the equivalent weight of the pulsed laser is The ion let values are:
因此在器件的灵敏区内,脉冲激光等效LET值为:Therefore, in the sensitive area of the device, the equivalent LET value of the pulsed laser is:
式中,ELET为所述脉冲激光等效LET值,λ为脉冲激光波长,Eion为重离子激发一对电子空穴对所需要的能量,ρ为入射半导体材料的密度,h为普朗克常量,c为光速,l为单粒子效应灵敏区厚度,E0为入射到埋氧层表面的激光能量,T为埋氧层的透射率,F为光斑影响参数,α为激光在硅有源区中的吸收系数。In the formula, ELET is the equivalent LET value of the pulsed laser, λ is the wavelength of the pulsed laser, E ion is the energy required for heavy ions to excite a pair of electron-hole pairs, ρ is the density of the incident semiconductor material, and h is the Planck constant, c is the speed of light, l is the thickness of the sensitive area of the single event effect, E 0 is the laser energy incident on the surface of the buried oxide layer, T is the transmittance of the buried oxide layer, F is the influence parameter of the light spot, and α is the active area of the laser on the silicon The absorption coefficient in the region.
需要说明的是,脉冲激光的脉冲宽度、非线性光学吸收效应等影响因素在试验需要被控制到不足以影响以上计算方法。脉冲激光的波长λ的取值范围为250nm~1130nm,埋氧层材料包括但不限于SiO2材料。It should be noted that the pulse width of the pulsed laser, the nonlinear optical absorption effect and other influencing factors need to be controlled in the experiment to be insufficient to affect the above calculation method. The wavelength λ of the pulsed laser ranges from 250nm to 1130nm, and the buried oxide layer material includes but not limited to SiO 2 material.
与现有的技术方案相比,本发明建立了利用XeF2反应刻蚀硅的适用于SOI器件结构的脉冲激光等效LET计算方法:Compared with the existing technical solutions, the present invention establishes a pulsed laser equivalent LET calculation method suitable for SOI device structures by using XeF2 to etch silicon in reaction:
(1)采用XeF2反应刻蚀的方法去除SOI器件Si衬底,使脉冲激光背部辐照时直接入射到埋氧层表面,避免了激光在器件衬底内的多次震荡反射过程,使脉冲激光等效LET计算大大简化,增加了最终计算结果的准确性。同时由于消除了衬底对激光能量的吸收衰减作用,使可用于脉冲激光模拟单粒子效应试验的激光波长范围大幅增大。(1) The Si substrate of the SOI device is removed by XeF 2 reactive etching, so that the pulsed laser is directly incident on the surface of the buried oxide layer when the back is irradiated, avoiding the multiple oscillation and reflection process of the laser in the device substrate, and making the pulse The laser equivalent LET calculation is greatly simplified, increasing the accuracy of the final calculation results. At the same time, due to the elimination of the absorption and attenuation effect of the substrate on laser energy, the laser wavelength range that can be used for pulsed laser simulation single event effect experiments is greatly increased.
(2)分析埋氧层对透射激光能量的影响,确定了透射率的计算方法,获得了激光穿过埋氧层后能量透射率受埋氧层厚度调制变化的结果,。(2) The influence of the buried oxygen layer on the transmitted laser energy was analyzed, the calculation method of the transmittance was determined, and the result that the energy transmittance was modulated by the thickness of the buried oxide layer after the laser passed through the buried oxide layer was obtained.
(3)分析激光光斑尺寸对诱发单粒子效应的激光能量的影响,确定了光斑影响参数F的计算方法,获得了光斑尺寸参数对有效激光能量的影响结果。(3) The influence of the laser spot size on the laser energy inducing the single event effect was analyzed, the calculation method of the spot influence parameter F was determined, and the influence result of the spot size parameter on the effective laser energy was obtained.
以上所述实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, should be considered as within the scope of this specification.
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation modes of the present invention, and the description thereof is relatively specific and detailed, but it should not be construed as limiting the patent scope of the invention. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims.
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