CN102159996B - 用于半导体光刻的投射曝光设备中的振动衰减 - Google Patents

用于半导体光刻的投射曝光设备中的振动衰减 Download PDF

Info

Publication number
CN102159996B
CN102159996B CN200980136165.9A CN200980136165A CN102159996B CN 102159996 B CN102159996 B CN 102159996B CN 200980136165 A CN200980136165 A CN 200980136165A CN 102159996 B CN102159996 B CN 102159996B
Authority
CN
China
Prior art keywords
damping element
interchangeable assembly
interchangeable
projection exposure
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200980136165.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102159996A (zh
Inventor
彼得.克洛希
迈克尔.林格尔
马库斯.韦斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN102159996A publication Critical patent/CN102159996A/zh
Application granted granted Critical
Publication of CN102159996B publication Critical patent/CN102159996B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lens Barrels (AREA)
CN200980136165.9A 2008-09-16 2009-09-15 用于半导体光刻的投射曝光设备中的振动衰减 Active CN102159996B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008047562.9 2008-09-16
DE102008047562A DE102008047562B4 (de) 2008-09-16 2008-09-16 Vorrichtung zur Dämpfung von Schwingungen in Projektionsbelichtungsanlagen für die Halbleiterlithographie
PCT/EP2009/061917 WO2010031754A1 (en) 2008-09-16 2009-09-15 Vibration damping in projection exposure apparatuses for semiconductor lithography

Publications (2)

Publication Number Publication Date
CN102159996A CN102159996A (zh) 2011-08-17
CN102159996B true CN102159996B (zh) 2014-12-10

Family

ID=41228717

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980136165.9A Active CN102159996B (zh) 2008-09-16 2009-09-15 用于半导体光刻的投射曝光设备中的振动衰减

Country Status (8)

Country Link
US (1) US8212992B2 (enExample)
EP (1) EP2326989B1 (enExample)
JP (1) JP5214031B2 (enExample)
KR (1) KR101608555B1 (enExample)
CN (1) CN102159996B (enExample)
DE (1) DE102008047562B4 (enExample)
TW (1) TWI610139B (enExample)
WO (1) WO2010031754A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2469340B1 (en) 2010-12-21 2021-01-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102015224743A1 (de) * 2015-12-09 2016-10-20 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem pseudoelastischen Dämpfungselement
DE102020206591A1 (de) * 2020-05-27 2021-12-02 Carl Zeiss Smt Gmbh Schwingungstilger und Verfahren zur Auslegung eines Schwingungstilgers sowie Projektionsbelichtungsanlage für die Halbleiterlithographie
US12000455B2 (en) * 2022-03-10 2024-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for reducing vibration of apparatuses
DE102022214186A1 (de) * 2022-12-21 2024-06-27 Carl Zeiss Smt Gmbh Optisches system und projektionsbelichtungsanlage

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020167740A1 (en) * 2001-05-02 2002-11-14 Karlfrid Osterried Lens system, in particular a projection lens system for semiconductor lithography
CN1442755A (zh) * 2001-12-21 2003-09-17 Asml荷兰有限公司 光刻装置及器件制造方法
TW200507066A (en) * 2003-07-25 2005-02-16 Nikon Corp Exposure apparatus
WO2006084657A1 (en) * 2005-02-11 2006-08-17 Carl Zeiss Smt Ag Vibration damping for photolithographic lens mount
EP1813989A1 (en) * 2006-01-30 2007-08-01 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420819B1 (en) * 1994-01-27 2002-07-16 Active Control Experts, Inc. Packaged strain actuator
US20030040818A1 (en) 1994-01-27 2003-02-27 Baruch Pletner Method and device for vibration control
JPH1089403A (ja) * 1996-09-10 1998-04-07 Nikon Corp 防振装置
DE19917104A1 (de) * 1999-04-15 2000-10-26 System 3R International Ab Vae Halter zum exakten Positionieren eines Werkstückes
DE10062786A1 (de) * 2000-12-15 2002-06-20 Zeiss Carl System zur Dämpfung von Schwingungen
TWI298427B (en) * 2001-02-13 2008-07-01 Asml Netherlands Bv Damped mount for use in lithographic projection apparatus
DE10106605A1 (de) * 2001-02-13 2002-08-22 Zeiss Carl System zur Beseitigung oder wenigstens Dämpfung von Schwingungen
DE10225266A1 (de) 2001-12-19 2003-07-03 Zeiss Carl Smt Ag Abbildungseinrichtung in einer Projektionsbelichtungsanlage
DE10229623A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Jena Gmbh Baugruppe mit einer äußeren Fassung und einem optischen Element
US20040100007A1 (en) 2002-11-21 2004-05-27 Nikon Corporation Vibration damping devices and methods
EP1457825A1 (en) * 2003-03-11 2004-09-15 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
JP4574206B2 (ja) * 2003-04-25 2010-11-04 キヤノン株式会社 駆動装置、それを用いた露光装置、デバイスの製造方法
US7607543B2 (en) * 2005-02-27 2009-10-27 Entegris, Inc. Reticle pod with isolation system
US20070097340A1 (en) * 2005-10-31 2007-05-03 Nikon Corporation Active damper with counter mass to compensate for structural vibrations of a lithographic system
JP5036259B2 (ja) * 2006-09-14 2012-09-26 キヤノン株式会社 除振装置、露光装置及びデバイス製造方法
DE102006046200A1 (de) * 2006-09-29 2008-04-03 Carl Zeiss Smt Ag Verfahren und Vorrichtung zur Positionierung eines Elements in einem optischen System
DE102006050835A1 (de) 2006-10-27 2008-05-08 Carl Zeiss Smt Ag Verfahren und Vorrichtung zum Austausch von Objetkivteilen
US8044373B2 (en) * 2007-06-14 2011-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5641878B2 (ja) 2010-10-29 2014-12-17 キヤノン株式会社 振動制御装置、リソグラフィー装置、および、物品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020167740A1 (en) * 2001-05-02 2002-11-14 Karlfrid Osterried Lens system, in particular a projection lens system for semiconductor lithography
CN1442755A (zh) * 2001-12-21 2003-09-17 Asml荷兰有限公司 光刻装置及器件制造方法
TW200507066A (en) * 2003-07-25 2005-02-16 Nikon Corp Exposure apparatus
WO2006084657A1 (en) * 2005-02-11 2006-08-17 Carl Zeiss Smt Ag Vibration damping for photolithographic lens mount
EP1813989A1 (en) * 2006-01-30 2007-08-01 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EP1813989A1A1 2007.08.01 *
US2002/0167740A1A1 2002.11.14 *
WO2006/084657A1A1 2006.08.17 *

Also Published As

Publication number Publication date
JP2012503305A (ja) 2012-02-02
US20110205507A1 (en) 2011-08-25
US8212992B2 (en) 2012-07-03
CN102159996A (zh) 2011-08-17
JP5214031B2 (ja) 2013-06-19
DE102008047562B4 (de) 2012-11-08
DE102008047562A1 (de) 2010-03-25
TWI610139B (zh) 2018-01-01
KR20110076929A (ko) 2011-07-06
TW201020692A (en) 2010-06-01
EP2326989A1 (en) 2011-06-01
EP2326989B1 (en) 2017-01-25
WO2010031754A1 (en) 2010-03-25
KR101608555B1 (ko) 2016-04-01

Similar Documents

Publication Publication Date Title
KR101157003B1 (ko) 투영 광학 디바이스 및 노광 장치
JP4954967B2 (ja) 構造物と２以上の能動減衰システムの組合せ、リソグラフィ装置、および投影アセンブリ
CN102929104B (zh) 光学成像装置
KR101155066B1 (ko) 리소그래피 장치, 투영 조립체 및 능동 감쇠
US20120138401A1 (en) Damping device
CN104614950A (zh) 光刻设备
KR20100074056A (ko) 대상물을 댐핑하는 방법, 능동 댐핑 시스템, 및 리소그래피 장치
KR101882824B1 (ko) 스테이지 위치설정 시스템 및 리소그래피 장치
JP2019534973A (ja) 形状記憶要素を有するアクチュエータ
JP5214031B2 (ja) 半導体リソグラフィのための投影露光装置における振動減衰方法
KR101806599B1 (ko) 가요성 커플링을 구비한 투사 시스템
KR102162035B1 (ko) 간단화된 제조를 갖는 광학 영상화 장치
JP5519184B2 (ja) 顕微鏡レンズの位置を制御する方法及びシステム
TWI673577B (zh) 微影裝置、微影投影裝置及器件製造方法
US20210080834A1 (en) Pneumatic Support Device and Lithographic Apparatus with Pneumatic Support Device
KR101821668B1 (ko) 리소그래피 장치 및 디바이스 제조 방법
WO2021023464A1 (en) Support, vibration isolation system, lithographic apparatus, object measurement apparatus, device manufacturing method
US9958793B2 (en) Lithographic apparatus, positioning system for use in a lithographic apparatus and method
US10866529B2 (en) Lithographic apparatus and device manufacturing method
US11269262B2 (en) Frame assembly, lithographic apparatus and device manufacturing method
WO2011096090A1 (ja) 加工面計測システム及びそれを用いた加工面半連続加工・計測方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant