CN102148182A - 浅沟槽隔离结构形成方法 - Google Patents
浅沟槽隔离结构形成方法 Download PDFInfo
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- CN102148182A CN102148182A CN2010101112078A CN201010111207A CN102148182A CN 102148182 A CN102148182 A CN 102148182A CN 2010101112078 A CN2010101112078 A CN 2010101112078A CN 201010111207 A CN201010111207 A CN 201010111207A CN 102148182 A CN102148182 A CN 102148182A
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- silicon nitride
- shallow trench
- layer
- nitride layer
- isolation structure
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CN201010111207.8A CN102148182B (zh) | 2010-02-10 | 2010-02-10 | 浅沟槽隔离结构形成方法 |
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CN201010111207.8A CN102148182B (zh) | 2010-02-10 | 2010-02-10 | 浅沟槽隔离结构形成方法 |
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CN102148182A true CN102148182A (zh) | 2011-08-10 |
CN102148182B CN102148182B (zh) | 2014-11-05 |
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CN201010111207.8A Active CN102148182B (zh) | 2010-02-10 | 2010-02-10 | 浅沟槽隔离结构形成方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448820A (zh) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 形成有源区的方法及半导体器件 |
CN107039343A (zh) * | 2016-02-04 | 2017-08-11 | 松下知识产权经营株式会社 | 元件芯片的制造方法及元件芯片 |
CN110875238A (zh) * | 2018-09-03 | 2020-03-10 | 长鑫存储技术有限公司 | 沟槽隔离结构及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6261921B1 (en) * | 1999-07-31 | 2001-07-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming shallow trench isolation structure |
US20020197822A1 (en) * | 2001-06-26 | 2002-12-26 | Wan-Yi Liu | Method of forming shallow trench isolation |
US20040072451A1 (en) * | 2002-10-14 | 2004-04-15 | Choi Myung Gyu | Method of manufacturing a semiconductor device |
CN1779944A (zh) * | 2004-10-21 | 2006-05-31 | 台湾积体电路制造股份有限公司 | 浅沟槽隔离结构及形成浅沟槽隔离结构的方法 |
US20060258116A1 (en) * | 2003-01-23 | 2006-11-16 | Silterra Malaysia Sdn. Bhd. | Shallow trench isolation |
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2010
- 2010-02-10 CN CN201010111207.8A patent/CN102148182B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6261921B1 (en) * | 1999-07-31 | 2001-07-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming shallow trench isolation structure |
US20020197822A1 (en) * | 2001-06-26 | 2002-12-26 | Wan-Yi Liu | Method of forming shallow trench isolation |
US20040072451A1 (en) * | 2002-10-14 | 2004-04-15 | Choi Myung Gyu | Method of manufacturing a semiconductor device |
US20060258116A1 (en) * | 2003-01-23 | 2006-11-16 | Silterra Malaysia Sdn. Bhd. | Shallow trench isolation |
CN1779944A (zh) * | 2004-10-21 | 2006-05-31 | 台湾积体电路制造股份有限公司 | 浅沟槽隔离结构及形成浅沟槽隔离结构的方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448820A (zh) * | 2014-09-02 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 形成有源区的方法及半导体器件 |
CN107039343A (zh) * | 2016-02-04 | 2017-08-11 | 松下知识产权经营株式会社 | 元件芯片的制造方法及元件芯片 |
CN107039343B (zh) * | 2016-02-04 | 2021-10-26 | 松下知识产权经营株式会社 | 元件芯片的制造方法 |
CN110875238A (zh) * | 2018-09-03 | 2020-03-10 | 长鑫存储技术有限公司 | 沟槽隔离结构及其制作方法 |
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CN102148182B (zh) | 2014-11-05 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20131128 |
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Effective date of registration: 20131128 Address after: 201203 Shanghai city Zuchongzhi road Pudong Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai city Zuchongzhi road Pudong Zhangjiang hi tech Park No. 1399 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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