CN102142415A - 具有嵌入式元件的集成电路封装 - Google Patents

具有嵌入式元件的集成电路封装 Download PDF

Info

Publication number
CN102142415A
CN102142415A CN2010106038860A CN201010603886A CN102142415A CN 102142415 A CN102142415 A CN 102142415A CN 2010106038860 A CN2010106038860 A CN 2010106038860A CN 201010603886 A CN201010603886 A CN 201010603886A CN 102142415 A CN102142415 A CN 102142415A
Authority
CN
China
Prior art keywords
base plate
dielectric base
conductive layer
integrated circuit
patterned conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010106038860A
Other languages
English (en)
Other versions
CN102142415B (zh
Inventor
卢克·英格兰
道格拉斯·阿伦·霍克斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of CN102142415A publication Critical patent/CN102142415A/zh
Application granted granted Critical
Publication of CN102142415B publication Critical patent/CN102142415B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05555Shape in top view being circular or elliptic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241Disposition
    • H01L2224/24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/25Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
    • H01L2224/251Disposition
    • H01L2224/2518Disposition being disposed on at least two different sides of the body, e.g. dual array
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/1016Shape being a cuboid
    • H01L2924/10162Shape being a cuboid with a square active surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本申请公开了半导体管芯封装,其中,该半导体管芯封装具有嵌入在电介质基板中的第一和第二分立元件。集成电路(IC)管芯表面安装在电介质基板的第一侧上。半导体管芯封装包括位于电介质基板的第二侧上的多个导电区,用于安装半导体管芯封装。多个贯通过孔将IC管芯耦接至第一和第二分立元件以及多个导电区。

Description

具有嵌入式元件的集成电路封装
技术领域
本申请文件涉及半导体管芯封装,其中,该半导体管芯封装具有嵌入在电介质基板中的第一和第二分立元件。
背景技术
例如蜂窝电话、个人数字助理、数字摄像机、膝上电脑等电子设备一般包括多个封装的半导体集成电路(IC)芯片以及组装在互连基板上的表面安装元件。对于将更多功能和特征结合到电子设备中并同时减小电子设备尺寸,存在着持续的市场需求。这进而带来了对互连基板的设计、尺寸和组装的不断提高的要求。随着组装的元件的数目增加,基板面积和成本增加,而对更小形状因子的需求在不断增加。
发明内容
本申请文件涉及半导体管芯封装,其中,该半导体管芯封装具有嵌入在电介质基板中的第一和第二分立元件。集成电路(IC)管芯表面安装或线键合在电介质基板的第一侧。半导体管芯封装包括位于电介质基板的第二侧上的多个导电区,用于安装半导体管芯封装。多个贯通过孔将IC管芯耦接至第一和第二分立元件以及多个导电区。
该概述希望提供对本专利申请的主题的简要回顾。不希望提供对本发明的排他性或穷尽性的说明。所包括的详细描述用于提供本专利申请的进一步有关信息。
附图说明
在不一定按照比例绘制的附图中,不同视图中类似的附图标记可以描述相似元件。具有不同字母后缀的类似附图标记可以表示相似元件的不同实例。附图通过示例方式而非限制性方式一般地说明本申请文件中讨论的多个实施例。
图1一般地说明IC封装示例的横截面视图,该IC封装具有在其上安装有IC管芯的基板中嵌入的多个元件;
图2一般地说明图1的IC封装的第一底视图,示出了图案化的导电层和多个暴露的导电区,用于将图1的IC封装耦接至外部互连基板。
图3一般地说明图1的IC封装的第二底视图,示出了图案化的导电层、多个贯通过孔以及嵌入式元件的定位。
图4一般地说明图1的IC封装的第一顶视图,示出了图案化的导电层、多个贯通过孔以及内嵌元件的定位。
图5一般地说明图1的IC封装的第二顶视图,示出了图案化的导电层的迹线、IC管芯、以及将IC管芯耦接至迹线的导线。
具体实施方式
本申请发明人已经认识到具有嵌入在电介质基板中的第一和第二分立元件的紧凑的IC封装。IC管芯安装至电介质基板并且耦接至第一和第二分立元件。多个贯通过孔设置在电介质基板内,用于将IC管芯以及第一和第二分立元件耦接至电介质基板的各侧。将电绝缘材料设置在IC和电介质基板上,以形成IC封装。电介质基板可以包括在IC管芯相对侧的多个键合焊盘。
图1一般地说明IC封装100的一个示例的横截面视图。IC封装100包括嵌入在电介质基板106中的第一分立元件102和第二分立元件104。在示例中,电介质基板106可以包括半固化片(prepreg)材料。电介质基板106包括第一侧108和第二侧110。在示例中,第一分立元件102和第二分立元件104在电介质基板106内彼此邻近。
在示例中,电介质基板106可以包括在电介质基板106的第一侧108上的第一图案化的导电层116。第一图案化导电层116可以包括多条导电迹线。导电迹线是从金属片(例如,铜)形成的,金属片被层压到电介质基板106的第一侧108上,然后被蚀刻以形成导电迹线图案。在示例中,随后采用焊料掩模覆盖第一图案化导电层116以及电介质基板106的第一侧108。焊料掩模选择性地暴露第一图案化导电层116的导电区(例如,键合焊盘或焊盘),用于将IC管芯114电和物理地耦接在这些区域上。在示例中,暴露的导电区的一部分是用于物理上耦接IC管芯的假焊盘。假焊盘不与贯通过孔122电耦接,也不与第一和第二分立元件102、104电耦接。在示例中,电介质基板106、第一图案化导电层116和焊料掩模的组合可以形成印刷电路板。
IC管芯114安装在电介质基板106的第一侧108上,并且在多个暴露导电区电耦接至第一图案化导电层116。在示例中,利用多条互连导线118将IC管芯114以线键合方式连接至第一图案化导电层116。多条导线118从IC管芯114上的焊盘耦接至第一图案化导电层116的焊盘。在备选示例中,利用多个焊球或其他倒装芯片互连材料,将IC管芯114以倒装芯片方式安装至第一图案化导电层116。
在示例中,采用电绝缘材料120覆盖IC管芯114和电介质基板106的第一侧108。电绝缘材料120将IC管芯114与外部影响电绝缘。在示例中,电绝缘材料120可以包括模合成物(mold compound),如环氧树脂、硅树脂(silicone)、聚酰亚胺、或者这些材料中一种或多种的组合。
在示例中,以针对第一侧108所述的相似方式,在电介质基板106的第二侧110上安装第二图案化导电层124。第二图案化导电层124可以包括多条导电迹线。导电迹线是从金属片(例如,铜)形成的,金属片被层压到电介质基板106的第二侧110上,然后被蚀刻以形成导电迹线图案。在示例中,随后采用焊料掩模覆盖第二图案化导电层124以及电介质基板106的第二侧110。焊料掩模选择性地暴露第二图案化导电层124的导电区(例如,输入-输出(IO)焊盘),以将IC封装100电和物理地耦接至外部互连基板(例如,另一印刷电路板)。在示例中,暴露的导电区的一部分是用于物理上耦接IC封装100的假焊盘。假焊盘不与贯通过孔122电耦接,也不与第一和第二分立元件102、104电耦接。
在示例中,在电介质基板106内设置多个贯通过孔122,以将第一图案化导电层116电耦接至第二图案化导电层124。这多个贯通过孔122提供IC管芯114与电介质基板106的第二侧110的多个接触区之间的电耦接。在示例中,多个贯通过孔122也为第一图案化导电层116上的与第一和第二分立元件102、104耦接的区域提供与第二图案化导电层124之间的电耦接。
具有嵌入式分立元件102、104的电介质基板106与安装在其上的IC管芯114的组合封装形成了紧凑的IC封装100,IC封装100可以经由电介质基板106的第二侧110上暴露的导电区来表面安装至外部互连基板。
在电介质基板106内嵌入第一和第二分立元件102、104可以提供IC封装100的减小的尺寸,并可以提供分立元件102、104与IC管芯114之间的缩短的互连长度。在示例中,可以通过例如由芬兰的Imbera Electronics或者奥地利的AT&S开发的嵌入工艺,将第一和第二分立元件102、104嵌入在电介质基板106中。
简而言之,可以通过首先将管芯附着至导电层,将一个或多个管芯(例如,第一分立元件102)嵌入在电介质基板中。然后,在管芯周围设置半固化片材料,从而将管芯嵌入到半固化片材料中。半固化片材料可以包括针对管芯的预切(precut)孔,半固化片材料可以设置在管芯周围并且设置在导电层上。
然后,可以在半固化片材料上设置第二导电层,所得到的在任一侧具有导电层并且嵌有管芯的半固化片的构造可以层压在一起。一旦将管芯嵌入到电介质基板中,形成贯通过孔。可以穿过电介质基板以及其上层压的层,钻出用于贯通过孔的孔钻。在孔内沉积金属(例如,铜)。IC管芯(例如,IC管芯114)可以安装到电介质基板条带阵列的其中嵌入有管芯的合适的一侧。然后,可以添加将IC管芯耦接至电介质基板上暴露导电部分的互连导线,并且可以用电绝缘材料(例如,电绝缘材料120)覆盖IC管芯,在IC管芯上电绝缘材料固化,以形成IC封装100的阵列。然后,可以机械锯开IC封装阵列,以将各个IC封装100彼此隔离开来。
图2说明图1的电介质基板106的第二侧110的第一横截面视图的示例。图2示出了相对于图1所示取向,从底部仰视的电介质基板106的第二侧110。图2说明第二图案化导电层124和由焊料掩模暴露的多个导电区202。这多个导电区202一般地在电介质基板106的第二侧110上规则地分隔开,在图2中示出为圆圈。在示例中,第二图案化导电层可以包括大平面部分(一般地在204示出)以及多条迹线206。大平面部分204可以为耦接的元件(例如,第一分立元件102)提供良好的热传导和/或改进的电性能。多条迹线206将元件或贯通过孔122耦接至暴露的导电区124。
图3说明图1的电介质基板106的第二侧110的第二横截面视图的示例。图3示出了第二图案化导电层124以及多个贯通过孔122,并示出了嵌入在电介质基板106中的第一和第二分立元件102、104的设置。
如图所示,迹线206可以耦接至贯通过孔122,或者迹线206可以耦接至分立元件(例如,第二分立元件104)。在图3中,贯通过孔122示出为较小的圆圈。较大的圆圈是图案化导电层124的部分。在示例中,大多数贯通过孔122可以定位为朝着电介质基板106的外边缘。有利地,将贯通过孔122定位为朝着外边缘,可以提供嵌入在电介质基板106中的第一和第二分立元件102、104的高效布局。然而,在其他示例中,一些或者所有贯通过孔122可以定位在第一和第二分立元件102、104之间。
图3说明在第二图案化导电层124下面的第一和第二分立元件102、104的定位。在示例中,电介质基板106的第二侧110的多个开口302提供了第一和第二分立元件102、104与第二图案化导电层124的大平面的电和热耦接。虽然示出了电介质基板106中一定数目的开口302,但是在一些示例中,可以提供更多或更少的开口302。在示例中,可以增加图3所示的开口302的数目,以提供与第一和第二分立元件102、104的增强的电和热耦接。
图4说明图1的电介质基板106的第一侧108的第一横截面视图的示例。图4示出了第一图案化导电层116、多个贯通过孔122、以及嵌入在电介质基板106中的第一和第二分立元件102、104。图4说明在第一图案化导电层116下面的第一和第二分立元件102、104的定位。
第一图案化导电层116包括多条迹线402,用于将贯通过孔122电耦接至分立元件(例如,第一分立元件102)以及暴露的导电区404(例如,焊盘),暴露的导电区404用于耦接来自IC管芯114的导线。在图4中,贯通过孔122示出为圆圈。第一图案化导电层116还可以包括用于耦接至第一和第二分立元件102、104的较大区域。这些较大区域利用电介质基板106第一侧108中的开口406来耦接至第一和第二分立元件102、104。虽然示出了电介质基板106中一定数目的开口302,但是在一些示例中,可以提供更多或更少的开口302。在示例中,可以增加图3所示的开口302的数目,以提供与第一和第二分立元件102、104的增强的电和热耦接。
图5说明图1的电介质基板106的第一侧108的顶视图的示例。为说明目的,图5说明第一侧108的顶视图,而未示出了电绝缘材料120。图5示出了具有焊盘502的IC管芯114,焊盘502利用互连导线405耦接至第一图案化导电层116的暴露导电部分404。
在示例中,第一和第二分立元件可以包括晶体管,IC管芯114可以包括晶体管的控制器。具体而言,第一和第二分立元件102、104可以包括高侧和低侧金属氧化物半导体场效应晶体管(MOSFET),这些晶体管与IC管芯114一起形成功率转换器。在具体示例中,功率转换器可以是降压转换器(buck converter),第一分立元件102可以包括高侧MOSFET,而第二分立元件104可以包括低侧MOSFET。
在示例中,两个晶体管的源极都耦接至电介质基板106的第二侧110上的第二图案化导电层124的大部分。该耦接至晶体管源极的大表面区域可以为外部键合焊盘设置(例如,多个导电区)提供良好的热性能,这是由于可获得大的热耗散面积。
有利地,在电介质基板106内嵌入第一和第二分立元件102、104可以减小IC封装100的尺寸。此外,在电介质基板内嵌入第一和第二分立元件102、104可以提高热性能,因为产生大部分热的元件(第一和第二分立元件102、104)定位在外部暴露导电部分202附近,有助于容易地消除来自第一和第二分立元件102、104的热。
其他说明
上述详细描述包括对附图的参照,附图形成了详细描述的一部分。附图通过示意方式示出了可以实施本发明的特定实施例。这些实施例在本文中也称为“示例”。这些示例可以包括除示出和描述的元件之外的其他元件。然而,本发明人还考虑到其中仅提供了示出和描述的那些元件的示例。
该申请文件中参照的所有公开、专利和专利文档的全部内容作为参考结合在此,就如分别作为参考结合在此。在该文件和如此参考结合的这些文档的使用不一致情况下,结合的参考的使用应当视为对该文件的补充;对于不可调和的不一致,该文件中的使用占主导。
在该文件中,如专利文档中通常使用的一样,使用用语“一”或“一个”来包括一个或多于一个,与任何其他实例或者“至少一个”或“一个或多个”的使用无关。在该文件中,使用用语“或”来指示非排他性的“或”,从而“A或B”包括“A而不是B”、“B而不是A”以及“A和B”,除非另有指示。在所附权利要求中,用语“包括”和“其中”用作相应用语“包含”和“在其中”的普通英语等同词。此外,在所附权利要求中,用语“包括”和“包含”是开放式的,即,权利要求中除了列举在这种用语之后的元件之外还包括其他元件的系统、设备、产品或方法仍被视为落入该权利要求的范围内。此外,在随附权利要求中,用语“第一”、“第二”、“第三”等仅仅用作标签,而不是要对它们的对象施加编号要求。
此外,在该文件中,当将例如材料或IC管芯等第一元件称为在第二元件“上”(例如,安装在第二元件上)时,第一元件可以是直接在第二元件上,或者也可以存在中间元件。在该文件中,当将例如层、区域或基板等第一元件称为“耦接至”第二元件时,第一元件可以直接耦接至第二元件,或者可以存在一个或多个中间元件。相反,当将第一元件称为“直接在另一元件上”或“直接耦接至另一元件”时,不存在中间元件。
本文描述的方法示例可以是至少部分地由机器或计算机实施的。一些示例可以包括计算机可读介质或机器可读介质,其上编码有将电子设备配置为执行如上示例所述的方法的指令。这些方法的一种实施方式包括代码,例如微代码、汇编语言代码、高级语言代码等。这种代码可以包括用于执行多种方法的计算机可读指令。代码可以形成计算机程序产品的部分。此外,代码可以在执行期间或在其他时候有形地存储一个或多个易失性或非易失性计算机可读介质上。这些计算机可读介质可以包括,但不限于,硬盘、可移除磁盘、可移除光盘(例如,光盘和数字视频盘)、盒式磁带、存储卡或棒、随机存储存储器(RAM)、只读存储器(ROM)等。
以上描述是示意性而非限制性的。例如,上述示例(或者示例的一个或多个方面)可以彼此组合使用。可以由例如阅读上述描述的本领域普通技术人员来使用其他实施例。按照37 C.F.R.§1.72(b)提供了摘要,以允许读者快速确定本技术公开的本质。可以理解的是,摘要不用于解释或限定权利要求的范围或含义。此外,在以上具体实施方式中,可以将多种特征分组以精简本公开。这不应理解为未要求保护的公开的特征对于任何权利要求是必不可少的。而是,发明主题可以存在于比具体公开的示例的所有特征更少的特征中。因此,所附权利要求在此结合到具体实施方式中,每一个权利要求自身作为独立实施例而存在。本发明的范围应该参照所附权利要求以及这些权利要求赋予的等同物的整个范围来确定。

Claims (20)

1.一种半导体管芯封装,包括:
电介质基板,具有第一侧和与第一侧相对的第二侧;
第一分立元件,嵌入在电介质基板中;
第二分立元件,嵌入在电介质基板中;
集成电路管芯,表面安装在电介质基板的第一侧并电耦接至第一和第二分立元件;
电绝缘材料,设置在集成电路管芯上以及电介质基板第一侧的至少一部分上;
多个导电区,位于电介质基板的第二侧上,用于安装电介质基板;以及
多个贯通过孔,设置在电介质基板内,所述多个贯通过孔中的至少一个将集成电路管芯电耦接至所述多个导电区中的至少一个。
2.根据权利要求1所述的半导体管芯封装,其中,所述多个导电区包括针对球栅阵列安装或触点栅格阵列安装之一的键合焊盘。
3.根据权利要求1所述的半导体管芯封装,包括:在电介质基板的第一侧的图案化导电层,位于集成电路管芯与电介质基板之间,
其中集成电路管芯、第一和第二分立元件以及所述多个贯通过孔电耦接至图案化导电层。
4.根据权利要求3所述的半导体管芯封装,其中,集成电路管芯以倒装芯片方式安装至图案化导电层。
5.根据权利要求3所述的半导体管芯封装,其中,集成电路管芯以线键合方式安装至图案化导电层。
6.根据权利要求3至5任一项所述的半导体管芯封装,其中,所述多个贯通过孔中的至少一个以及图案化导电层将第一分立元件电耦接至所述多个导电区中的至少一个。
7.根据权利要求1所述的半导体管芯封装,包括:位于电介质基板的第二侧的图案化导电层,
其中图案化导电层提供第一和第二分立元件与所述多个贯通过孔之间的电耦接。
8.根据权利要求1所述的半导体管芯封装,其中,电绝缘材料包括环氧树脂或硅树脂中的至少一种。
9.根据权利要求1所述的半导体管芯封装,其中,第一分立元件包括第一晶体管,第二分立元件包括第二晶体管,集成电路管芯包括控制器,所述控制器用于控制第一和第二晶体管的操作,以使半导体管芯封装操作为功率转换器。
10.根据权利要求1所述的半导体管芯封装,其中,电介质基板包括半固化片材料。
11.一种封装方法,包括:
在电介质基板中嵌入第一和第二分立元件,其中第一分立元件与第二分立元件邻近;
在电介质基板中形成多个贯通过孔;
在电介质基板的第一侧形成多个导电区,其中至少一个导电区电耦接至所述多个贯通过孔中的至少一个;
在电介质基板的第二侧安装集成电路管芯,第二侧与第一侧相对,其中集成电路管芯电耦接至第一和第二分立元件以及至少一个贯通过孔;以及
在集成电路管芯以及半导体基板第二侧的至少一部分上固化电绝缘材料。
12.根据权利要求11所述的封装方法,包括:
在电介质基板的第二侧上层压图案化导电层,以使图案化导电层设置在电介质基板和集成电路管芯之间,其中,集成电路管芯以及第一和第二分立元件电耦接至图案化导电层。
13.根据权利要求12所述的封装方法,其中,安装集成电路管芯包括:将集成电路管芯以倒装芯片方式安装至图案化导电层。
14.根据权利要求12所述的封装方法,其中,安装集成电路管芯包括:将集成电路管芯以线键合方式安装至图案化导电层。
15.根据权利要求11所述的封装方法,包括:
在电介质基板的第一侧上层压图案化导电层;以及
其中,形成多个导电区包括:采用焊料掩模涂布图案化导电层,以使多个导电区是未被焊料掩模覆盖的暴露区。
16.根据权利要求11至15任一项所述的封装方法,其中,所述多个导电区是针对球栅阵列安装或触点栅格阵列安装之一而配置的。
17.一种功率转换器系统,包括:
电介质基板,具有第一侧和第二侧;
高侧晶体管管芯,嵌入在电介质基板中;
低侧晶体管管芯,嵌入在电介质基板中,低侧晶体管与高侧晶体管邻近;
在电介质基板的第一侧上的第一图案化导电层,其中,高侧晶体管管芯和低侧晶体管管芯耦接至第一图案化导电层;
在电介质基板的第二侧上的第二图案化导电层,其中,高侧晶体管管芯和低侧晶体管管芯耦接至第二图案化导电层;
多个贯通过孔,至少一个贯通过孔耦接至第一图案化导电层,并且至少一个贯通过孔耦接至第二图案化导电层;
集成电路管芯,安装在电介质基板的第一侧上并耦接至第一图案化导电层,集成电路包括针对高侧晶体管管芯和低侧晶体管管芯的控制器;
电绝缘材料,设置在集成电路管芯以及电介质基板第一侧的至少一部分上;以及
在电介质基板的第二侧上的多个导电区,用于安装电介质基板。
18.根据权利要求17所述的功率转换器系统,其中,电介质基板包括半固化片材料。
19.根据权利要求17至18任一项所述的功率转换器系统,其中,利用多条导线将集成电路管芯安装至图案化导电层。
20.根据权利要求17至18任一项所述的功率转换器系统,其中,所述多个导电区是针对安装至印刷电路板的球栅阵列安装或触点栅格阵列安装之一而配置的。
CN201010603886.0A 2009-12-22 2010-12-22 具有嵌入式元件的集成电路封装 Expired - Fee Related CN102142415B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/645,075 2009-12-22
US12/645,075 US8304888B2 (en) 2009-12-22 2009-12-22 Integrated circuit package with embedded components

Publications (2)

Publication Number Publication Date
CN102142415A true CN102142415A (zh) 2011-08-03
CN102142415B CN102142415B (zh) 2015-07-15

Family

ID=44149904

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010603886.0A Expired - Fee Related CN102142415B (zh) 2009-12-22 2010-12-22 具有嵌入式元件的集成电路封装

Country Status (2)

Country Link
US (1) US8304888B2 (zh)
CN (1) CN102142415B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8304888B2 (en) 2009-12-22 2012-11-06 Fairchild Semiconductor Corporation Integrated circuit package with embedded components
CN104157634A (zh) * 2014-07-25 2014-11-19 西安交通大学 一种分裂电容中间布局的低寄生电感GaN功率集成模块
CN106409698A (zh) * 2016-11-11 2017-02-15 上海伊诺尔信息技术有限公司 智能卡模块的制造方法、智能卡模块及智能卡和条带
CN106653730A (zh) * 2015-10-28 2017-05-10 蔡亲佳 基于半导体芯片封装体的嵌入式封装结构及其封装方法
CN110444517A (zh) * 2014-02-07 2019-11-12 阿尔特拉公司 集成电路封装
CN111564419A (zh) * 2020-07-14 2020-08-21 甬矽电子(宁波)股份有限公司 芯片叠层封装结构、其制作方法和电子设备

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8618654B2 (en) * 2010-07-20 2013-12-31 Marvell World Trade Ltd. Structures embedded within core material and methods of manufacturing thereof
US8981763B2 (en) * 2010-09-22 2015-03-17 Infineon Technologies Ag Di/dt current sensing
US20120193772A1 (en) * 2011-01-28 2012-08-02 Hunt Hang Jiang Stacked die packages with flip-chip and wire bonding dies
US8421204B2 (en) 2011-05-18 2013-04-16 Fairchild Semiconductor Corporation Embedded semiconductor power modules and packages
US9120105B2 (en) 2011-10-31 2015-09-01 Monika Weber Electronic device for pathogen detection
US11198126B2 (en) 2011-10-31 2021-12-14 Fluid-Screen, Inc. Apparatus for pathogen detection
US9236324B2 (en) * 2011-12-26 2016-01-12 Mitsubishi Electric Corporation Electric power semiconductor device and method for producing same
US10269619B2 (en) 2013-03-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level chip scale packaging intermediate structure apparatus and method
KR101832796B1 (ko) 2013-09-27 2018-02-27 인텔 코포레이션 패키징 빌드-업 아키텍처를 위한 자기장 차폐 장치, 모바일 디바이스 및 형성 방법
US9196549B2 (en) * 2013-12-04 2015-11-24 United Microelectronics Corp. Method for generating die identification by measuring whether circuit is established in a package structure
US9396300B2 (en) * 2014-01-16 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging methods for semiconductor devices, packaged semiconductor devices, and design methods thereof
JP2015216263A (ja) * 2014-05-12 2015-12-03 マイクロン テクノロジー, インク. 半導体装置
US10321575B2 (en) 2015-09-01 2019-06-11 Qualcomm Incorporated Integrated circuit (IC) module comprising an integrated circuit (IC) package and an interposer with embedded passive components
US10050025B2 (en) * 2016-02-09 2018-08-14 Texas Instruments Incorporated Power converter monolithically integrating transistors, carrier, and components
WO2017181030A2 (en) 2016-04-15 2017-10-19 Fluid-Screen, Inc. Analyte detection methods and apparatus using dielectrophoresis and electroosmosis
US11171110B2 (en) * 2017-04-27 2021-11-09 Skyworks Solutions, Inc. Backside metalization with through-wafer-via processing to allow use of high q bondwire inductances
US10840216B2 (en) * 2019-03-05 2020-11-17 Cerebras Systems Inc. Systems and methods for powering an integrated circuit having multiple interconnected die
CA3161340A1 (en) 2019-11-13 2021-05-20 Fluid-Screen, Inc. An apparatus and methods to rapidly detect, separate, purify, and quantify various viruses from cells, cultured medium and other fluids
CA3161454A1 (en) 2019-11-13 2021-05-20 Fluid-Screen, Inc. Methods and apparatus for detection of bacteria in a sample using dielectrophoresis

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060170098A1 (en) * 2005-02-01 2006-08-03 Shih-Ping Hsu Module structure having embedded chips
US20070034942A1 (en) * 2005-08-12 2007-02-15 Shuming Xu Power LDMOS transistor
US7250576B2 (en) * 2005-05-19 2007-07-31 International Business Machines Corporation Chip package having chip extension and method
US7566931B2 (en) * 2005-04-18 2009-07-28 Fairchild Semiconductor Corporation Monolithically-integrated buck converter

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
US5579207A (en) * 1994-10-20 1996-11-26 Hughes Electronics Three-dimensional integrated circuit stacking
US6034441A (en) * 1997-11-26 2000-03-07 Lucent Technologies, Inc. Overcast semiconductor package
EP1098368B1 (en) * 1999-04-16 2011-12-21 Panasonic Corporation Module component and method of manufacturing the same
US6682955B2 (en) * 2002-05-08 2004-01-27 Micron Technology, Inc. Stacked die module and techniques for forming a stacked die module
JP2004104115A (ja) * 2002-08-21 2004-04-02 Matsushita Electric Ind Co Ltd パワーモジュール及びその製造方法
US20040188811A1 (en) * 2003-03-24 2004-09-30 Intel Corporation Circuit package apparatus, systems, and methods
JP2005183500A (ja) * 2003-12-17 2005-07-07 Fuji Electric Holdings Co Ltd 超小型電力変換装置およびその製造方法
CN1998273A (zh) * 2004-03-11 2007-07-11 国际整流器公司 嵌入式功率管理控制电路
US7501702B2 (en) * 2004-06-24 2009-03-10 Fairchild Semiconductor Corporation Integrated transistor module and method of fabricating same
US20060289976A1 (en) * 2005-06-23 2006-12-28 Intel Corporation Pre-patterned thin film capacitor and method for embedding same in a package substrate
CN101233190B (zh) * 2005-07-28 2011-12-07 日本电气株式会社 绝缘材料、布线板和半导体器件
US7291869B2 (en) * 2006-02-06 2007-11-06 Infieon Technologies A.G. Electronic module with stacked semiconductors
US20070290378A1 (en) * 2006-06-20 2007-12-20 International Business Machines Corporation Novel reworkable underfills for ceramic mcm c4 protection
CN101522318B (zh) * 2006-08-08 2013-11-06 环球产权公司 粘合性提高的电路材料、其制造方法和由其制成的制品
US8072076B2 (en) * 2006-10-11 2011-12-06 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structures and integrated circuit chip having the same
US20080217708A1 (en) * 2007-03-09 2008-09-11 Skyworks Solutions, Inc. Integrated passive cap in a system-in-package
TWI335653B (en) * 2007-04-30 2011-01-01 Unimicron Technology Corp Surface structure of package substrate and method of manufacturing the same
US8030743B2 (en) * 2008-01-07 2011-10-04 Fairchild Semiconductor Corporation Semiconductor package with an embedded printed circuit board and stacked die
US7768108B2 (en) * 2008-03-12 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die package including embedded flip chip
US20090278241A1 (en) * 2008-05-08 2009-11-12 Yong Liu Semiconductor die package including die stacked on premolded substrate including die
US8314499B2 (en) * 2008-11-14 2012-11-20 Fairchild Semiconductor Corporation Flexible and stackable semiconductor die packages having thin patterned conductive layers
US8168490B2 (en) * 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
US8304888B2 (en) 2009-12-22 2012-11-06 Fairchild Semiconductor Corporation Integrated circuit package with embedded components

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060170098A1 (en) * 2005-02-01 2006-08-03 Shih-Ping Hsu Module structure having embedded chips
US7566931B2 (en) * 2005-04-18 2009-07-28 Fairchild Semiconductor Corporation Monolithically-integrated buck converter
US7250576B2 (en) * 2005-05-19 2007-07-31 International Business Machines Corporation Chip package having chip extension and method
US20070034942A1 (en) * 2005-08-12 2007-02-15 Shuming Xu Power LDMOS transistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8304888B2 (en) 2009-12-22 2012-11-06 Fairchild Semiconductor Corporation Integrated circuit package with embedded components
CN110444517A (zh) * 2014-02-07 2019-11-12 阿尔特拉公司 集成电路封装
CN104157634A (zh) * 2014-07-25 2014-11-19 西安交通大学 一种分裂电容中间布局的低寄生电感GaN功率集成模块
CN104157634B (zh) * 2014-07-25 2017-04-26 西安交通大学 一种分裂电容中间布局的低寄生电感GaN功率集成模块
CN106653730A (zh) * 2015-10-28 2017-05-10 蔡亲佳 基于半导体芯片封装体的嵌入式封装结构及其封装方法
CN106409698A (zh) * 2016-11-11 2017-02-15 上海伊诺尔信息技术有限公司 智能卡模块的制造方法、智能卡模块及智能卡和条带
CN111564419A (zh) * 2020-07-14 2020-08-21 甬矽电子(宁波)股份有限公司 芯片叠层封装结构、其制作方法和电子设备

Also Published As

Publication number Publication date
CN102142415B (zh) 2015-07-15
US8304888B2 (en) 2012-11-06
US20110147917A1 (en) 2011-06-23

Similar Documents

Publication Publication Date Title
CN102142415B (zh) 具有嵌入式元件的集成电路封装
JP3234057B2 (ja) 熱導体をもつパッド・アレイ半導体およびその製法
US7754530B2 (en) Thermal enhanced low profile package structure and method for fabricating the same
CN103367300B (zh) 引线框、半导体装置以及引线框的制造方法
CN101341593B (zh) 多晶片集成电路封装及形成其的方法
KR100694739B1 (ko) 다수의 전원/접지면을 갖는 볼 그리드 어레이 패키지
TW517359B (en) Enhanced die-up ball grid array packages and method for making the same
US7679176B2 (en) Semiconductor device and electronic control unit using the same
US8729710B1 (en) Semiconductor package with patterning layer and method of making same
EP1396885B1 (en) Resin moulded automotive electronic control unit
CN1113410C (zh) 一种集成电路封装组件和组装集成电路封装的方法
US7551455B2 (en) Package structure
CN104428892A (zh) 用于基板核心层的方法和装置
US10582617B2 (en) Method of fabricating a circuit module
US10121043B2 (en) Printed circuit board assembly with image sensor mounted thereon
CN105321900A (zh) 用于集成电路封装的暴露的、可焊接的散热器
US20060108146A1 (en) Structure of electronic package and method for fabricating the same
US20080083981A1 (en) Thermally Enhanced BGA Packages and Methods
JP2009135391A (ja) 電子装置およびその製造方法
US20040262746A1 (en) High-density chip scale package and method of manufacturing the same
US20020000656A1 (en) Ball grid array package and a packaging process for same
JP2005109088A (ja) 半導体装置及びその製造方法、回路基板並びに電子機器
JP2008198916A (ja) 半導体装置及びその製造方法
CN107039390A (zh) 半导体封装
US20080032454A1 (en) Thermally Enhanced BGA Package Substrate Structure and Methods

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: Arizona, USA

Patentee after: FAIRCHILD SEMICONDUCTOR Corp.

Address before: Maine

Patentee before: FAIRCHILD SEMICONDUCTOR Corp.

CP02 Change in the address of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150715

Termination date: 20211222

CF01 Termination of patent right due to non-payment of annual fee