CN102138185B - 包含耐溅射材料的极端紫外线辐射反射元件 - Google Patents

包含耐溅射材料的极端紫外线辐射反射元件 Download PDF

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Publication number
CN102138185B
CN102138185B CN200980126444.7A CN200980126444A CN102138185B CN 102138185 B CN102138185 B CN 102138185B CN 200980126444 A CN200980126444 A CN 200980126444A CN 102138185 B CN102138185 B CN 102138185B
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layer
extreme
potpourri
radiation
following group
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CN200980126444.7A
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Chinese (zh)
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CN102138185A (zh
Inventor
C·梅茨马歇尔
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Ushio Denki KK
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/283—Interference filters designed for the ultraviolet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
CN200980126444.7A 2008-07-07 2009-07-01 包含耐溅射材料的极端紫外线辐射反射元件 Active CN102138185B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08104648 2008-07-07
EP08104648.4 2008-07-07
PCT/IB2009/052855 WO2010004482A1 (en) 2008-07-07 2009-07-01 Extreme uv radiation reflecting element comprising a sputter-resistant material

Publications (2)

Publication Number Publication Date
CN102138185A CN102138185A (zh) 2011-07-27
CN102138185B true CN102138185B (zh) 2015-09-09

Family

ID=41151943

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980126444.7A Active CN102138185B (zh) 2008-07-07 2009-07-01 包含耐溅射材料的极端紫外线辐射反射元件

Country Status (5)

Country Link
US (1) US8693090B2 (https=)
EP (1) EP2297746A1 (https=)
JP (1) JP2011527436A (https=)
CN (1) CN102138185B (https=)
WO (1) WO2010004482A1 (https=)

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KR101846336B1 (ko) 2010-06-25 2018-04-06 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 방법
WO2012041697A1 (en) * 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
CN102621815B (zh) * 2011-01-26 2016-12-21 Asml荷兰有限公司 用于光刻设备的反射光学部件及器件制造方法
DE102012207125A1 (de) 2012-04-27 2013-03-28 Carl Zeiss Smt Gmbh Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zum Optimieren eines Schutzlagensystems für ein optisches Element
US9696467B2 (en) * 2014-01-31 2017-07-04 Corning Incorporated UV and DUV expanded cold mirrors
GB2551079A (en) * 2015-03-19 2017-12-06 Halliburton Energy Services Inc Mesh reinforcement for metal-matrix composite tools
US10128016B2 (en) * 2016-01-12 2018-11-13 Asml Netherlands B.V. EUV element having barrier to hydrogen transport
CN109370271B (zh) * 2018-10-29 2021-05-25 山东建筑大学 一种新型的耐辐照空间固体润滑剂涂层及制备方法
EP3779525B1 (en) * 2019-08-13 2024-01-03 Istituto Nazionale di Astrofisica Method for applying a carbon-based reflective overcoating on a grazing incidence optical unit
CN116165734B (zh) * 2023-03-01 2025-12-02 苏州江泓电子科技有限公司 一种反射镜及其制备方法和应用

Citations (4)

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EP1675164A1 (en) * 2003-10-15 2006-06-28 Nikon Corporation Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system
CN101088031A (zh) * 2004-12-23 2007-12-12 弗劳恩霍弗实用研究促进协会 用于euv光谱区域的热稳定的多层的反射镜
US20080153010A1 (en) * 2006-11-09 2008-06-26 Asahi Glass Company., Ltd. Method for depositing reflective multilayer film of reflective mask blank for euv lithography and method for producing reflective mask blank for euv lithography
US20080149854A1 (en) * 2006-12-22 2008-06-26 Asml Netherlands B.V. Illumination system, lithographic apparatus, mirror, method of removing contamination from a mirror and device manufacturing method

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US5433988A (en) * 1986-10-01 1995-07-18 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JPH02238400A (ja) * 1989-03-13 1990-09-20 Nippon Telegr & Teleph Corp <Ntt> 多層膜
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
US6664554B2 (en) 2001-01-03 2003-12-16 Euv Llc Self-cleaning optic for extreme ultraviolet lithography
EP1402542B1 (en) 2001-07-03 2007-09-26 EUV Limited Liability Corporation Passivating overcoat bilayer
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
US7234064B2 (en) * 2002-08-16 2007-06-19 Hx Technologies, Inc. Methods and systems for managing patient authorizations relating to digital medical data
US7420653B2 (en) * 2003-10-02 2008-09-02 Asml Netherlands B.V. Lithographic projection apparatus, mirror, method of supplying a protective cap layer, device manufacturing method and device manufactured accordingly
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
GB0426036D0 (en) 2004-11-26 2004-12-29 Boc Group Plc Protection of surfaces exposed to charged particles
JP2006153528A (ja) 2004-11-26 2006-06-15 Canon Inc 軟ｘ線多層膜反射鏡、軟ｘ線多層膜反射鏡による投影光学系を備えた露光装置
JP2006332153A (ja) * 2005-05-24 2006-12-07 Hoya Corp 反射型マスクブランク及び反射型マスク並びに半導体装置の製造方法
US7599112B2 (en) * 2005-10-11 2009-10-06 Nikon Corporation Multilayer-film mirrors, lithography systems comprising same, and methods for manufacturing same
JP4703354B2 (ja) * 2005-10-14 2011-06-15 Ｈｏｙａ株式会社 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP2008109060A (ja) * 2005-11-10 2008-05-08 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクの多層反射膜を成膜する方法、ならびにｅｕｖリソグラフィ用反射型マスクブランクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1675164A1 (en) * 2003-10-15 2006-06-28 Nikon Corporation Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system
CN101088031A (zh) * 2004-12-23 2007-12-12 弗劳恩霍弗实用研究促进协会 用于euv光谱区域的热稳定的多层的反射镜
US20080153010A1 (en) * 2006-11-09 2008-06-26 Asahi Glass Company., Ltd. Method for depositing reflective multilayer film of reflective mask blank for euv lithography and method for producing reflective mask blank for euv lithography
US20080149854A1 (en) * 2006-12-22 2008-06-26 Asml Netherlands B.V. Illumination system, lithographic apparatus, mirror, method of removing contamination from a mirror and device manufacturing method

Also Published As

Publication number Publication date
JP2011527436A (ja) 2011-10-27
US20110096428A1 (en) 2011-04-28
US8693090B2 (en) 2014-04-08
EP2297746A1 (en) 2011-03-23
WO2010004482A1 (en) 2010-01-14
CN102138185A (zh) 2011-07-27

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CP01 Change in the name or title of a patent holder

Address after: Holland Ian Deho Finn

Patentee after: KONINKLIJKE PHILIPS N.V.

Address before: Holland Ian Deho Finn

Patentee before: Koninklijke Philips Electronics N.V.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20190806

Address after: Tokyo, Japan

Patentee after: USHIO DENKI Kabushiki Kaisha

Address before: Holland Ian Deho Finn

Patentee before: KONINKLIJKE PHILIPS N.V.

TR01 Transfer of patent right