CN102136455A - 制作互补型金属氧化物半导体器件的方法 - Google Patents
制作互补型金属氧化物半导体器件的方法 Download PDFInfo
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1198008A (zh) * | 1997-04-30 | 1998-11-04 | 日本电气株式会社 | Cmos结构半导体器件的制备方法 |
US6451704B1 (en) * | 2001-05-07 | 2002-09-17 | Chartered Semiconductor Manufacturing Ltd. | Method for forming PLDD structure with minimized lateral dopant diffusion |
CN1168134C (zh) * | 2000-10-16 | 2004-09-22 | 联华电子股份有限公司 | 自行对准位线接触窗与节点接触窗制造方法 |
US20050003621A1 (en) * | 2003-05-29 | 2005-01-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
CN101276758A (zh) * | 2007-03-26 | 2008-10-01 | 联华电子股份有限公司 | 制作半导体晶体管元件的方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1198008A (zh) * | 1997-04-30 | 1998-11-04 | 日本电气株式会社 | Cmos结构半导体器件的制备方法 |
CN1168134C (zh) * | 2000-10-16 | 2004-09-22 | 联华电子股份有限公司 | 自行对准位线接触窗与节点接触窗制造方法 |
US6451704B1 (en) * | 2001-05-07 | 2002-09-17 | Chartered Semiconductor Manufacturing Ltd. | Method for forming PLDD structure with minimized lateral dopant diffusion |
US20050003621A1 (en) * | 2003-05-29 | 2005-01-06 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
CN101276758A (zh) * | 2007-03-26 | 2008-10-01 | 联华电子股份有限公司 | 制作半导体晶体管元件的方法 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20130109 |
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Effective date of registration: 20130109 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Application publication date: 20110727 |