CN102136438A - Method for quickly detecting segment difference height between stacked frames of chip - Google Patents
Method for quickly detecting segment difference height between stacked frames of chip Download PDFInfo
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- CN102136438A CN102136438A CN2010100273477A CN201010027347A CN102136438A CN 102136438 A CN102136438 A CN 102136438A CN 2010100273477 A CN2010100273477 A CN 2010100273477A CN 201010027347 A CN201010027347 A CN 201010027347A CN 102136438 A CN102136438 A CN 102136438A
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Abstract
The invention discloses a method for quickly detecting the segment difference height between stacked frames of a chip. The method comprises the following steps of: making a general testing mask plate; establishing a calibration system capable of representing the relation between a CD (Compact Disc) and a step height according to shape and key size of a testing pattern; regularly and uniformly placing testing patterns into the general testing mask plate in batches or together; coating photoresist on a silicon chip; exposing and developing to form a needed testing pattern; measuring the key size of the formed testing pattern or observing the change of the appearance; and obtaining a step height existing in a power device process by using a measuring or observing result in comparison to the calibration system. By adopting the method, the practical silicon chip state can be directly detected, and the physical property failure of a device, caused by the step height in the technical developing process of the power device, is avoided. Compared with the conventional method, the method has the advantages: the developing cost and the degree of dependence on the experience of research personnel and the theoretical principle are lowered.
Description
Technical field
The present invention relates to the semiconductor integrated circuit field, particularly relate to a kind of method that is used for section difference height between power device process exploitation fast detecting chip stack structure.
Background technology
In the power device product because its high withstand voltage characteristic is often introduced epitaxial loayer, buried regions, technologies such as deep trench isolation, and these technologies can cause many shoulder heights that are difficult to predict (step hei ght), if can not in time recognize section difference state actual in the chip (chip) in the process exploitation stage, bring influence can for the foundation of subsequent module condition.Directly cause the inefficacy of device on physical structure, influence the exploitation and the progress of integrated artistic.
Existing power device process exploitation mainly is the structure sheet experiment by some weak point flow processs, relies on some experiences and the in-problem processing step of some possibilities of theoretical heap, and module is carried out the shoulder height that destructive silicon chip fractograph analysis is confirmed silicon chip.This traditional method development cost height, and to research staff's experience, theoretical foundation has stronger dependence.
Summary of the invention
The technical problem to be solved in the present invention provides the method for section difference height between a kind of fast detecting chip stack structure, can effectively avoid making the device physics inefficacy by shoulder height in the power device process exploitation process.
For solving the problems of the technologies described above, the method for section difference height is to adopt following technical scheme to realize between fast detecting chip stack structure of the present invention:
Step 1, universal test mask plate of making; Set up one according to the size of the shape of resolution chart and CD (critical size) and can characterize the calibration system that concerns between CD and the shoulder height;
Step 2, with resolution chart with in batches or the combination mode, the rule and be positioned over uniformly in the universal test mask plate;
Step 3, on silicon chip, be coated with photoresist; Exposure, development form required resolution chart;
Step 4, the formed resolution chart critical size of step 3 measured or observes the variation of outward appearance;
Step 5, according to measuring or the result of observation contrasts calibration system and draws the shoulder height that exists in the power device technology.
The present invention directly utilizes the exposure of test mask plate, changes the shoulder height that characterizes each position in the chip according to the resolution chart CD on the mask plate and changes.Method of the present invention can measure by naked-eye observation and CD and realize making judgement accurately fast, changes and needn't test the shoulder height that obtains each position in the chip by destructive silicon chip section.Method of the present invention can not only direct detection actual silicon sheet situation, avoid causing the device physics inefficacy by shoulder height in the power device process exploitation process, and reduced development cost with respect to conventional method, and to research staff's experience, the degree of dependence of theoretical foundation.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is a universal test mask plate structure chart;
Fig. 2 is an exposure area build-in test diagram form master drawing;
Fig. 3 is the focal length certification mark pattern card that is used to detect;
Fig. 4 is method one an embodiment control flow chart of the present invention.
Embodiment
In conjunction with shown in Figure 4, in one embodiment, the technological process that the method for section difference height is implemented between described fast detecting chip stack structure is as follows:
Step 1, universal test mask plate of making; Set up one according to the size of the shape of resolution chart and CD (critical size) and can characterize the calibration system that concerns between CD and the shoulder height.
Fig. 1 is one 6 inches standard universal test mask plates, has difform resolution chart in this mask plate.The exposure area size of described universal test mask plate can be adjusted according to the size (shot also can be regarded as die size) of exposing each time in the actual development technology; The scribe line width of mask plate must not be less than 300 μ m, to be applicable to all types photo-etching machine exposal baffle plate shading required precision; On the scribe line of mask plate ad-hoc location, make sign property mark, use to do the shot district office.
Described calibration system can be adopted in the following method and realize: select some figures relatively more responsive to the technique change reaction, in conjunction with shown in Figure 2, be generally long and narrow argyle design or lozenge diagram and other figure such as point-like [(or title island (dot), as the square among Fig. 2], the combination of strip [(or claim space (gap), as the rectangle among Fig. 2] is as resolution chart; Resolution chart is exposed under different focal (focus) by mask aligner, develop; The resolution chart that obtains is measured, and measurement is corresponding with focal length, promptly set up a calibration system.Described calibration system can be quantized the variation of resolution chart critical size and the relation between the shoulder height.For example, the resolution chart critical size 50nm that diminishes, corresponding shoulder height changes
The resolution chart critical size 80nm that diminishes, corresponding shoulder height changes
Deng.
Referring to shown in Figure 3, the focal length certification mark that is used for monitoring of tools (focus mark) that described resolution chart can adopt each mask aligner equipment vendors to be provided.For example in Fig. 3 (a), resolution chart is long and narrow rhombus, and this figure can obviously change along with the CD of its Y direction of slight variation of focal length (focus).Utilize the pattern of this class figure, the variation of CD can characterize the difference of the distance of the discharging of the coke significantly, and that the difference of focal length can be converted into the step section of true reactor stack architecture by the calibration system of having set up is poor.
Step 2, with resolution chart with in batches or the combination mode, the rule and be positioned over uniformly in the universal test mask plate.For example shown in Figure 2, the resolution chart of the different shape combination of in universal test mask plate exposure area, placing.
Step 3, on silicon chip, be coated with photoresist; Exposure, development form required resolution chart.Described " photoresist " can be the I-line that possesses the resolution chart analytic ability, KrF even short wavelength's photosensitizing chemical product material more.
Step 4, the formed resolution chart critical size of step 3 measured or observes the variation of outward appearance.The variation that is to say exposure back resolution chart critical size or outward appearance can adopt naked-eye observation and CD to measure two kinds of methods.For the ease of naked-eye observation, can place some on described resolution chart next door and indicate, so that the variation that naked eyes directly observe resolution chart produce.
Step 5, according to measuring or the result of observation contrasts calibration system and draws the shoulder height that exists in the power device technology.
Step 6, removal photoresist.After having detected between power device technology chips storehouse section difference height, only need just continuing flow behind the actual silicon chip stripping glue.
More than by specific embodiment the present invention is had been described in detail, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (7)
1. the method for section difference height between a fast detecting chip stack structure is characterized in that, comprises the steps:
Step 1, universal test mask plate of making; Set up one according to the size of the shape of resolution chart and critical size and can characterize the calibration system that concerns between CD and the shoulder height;
Step 2, with resolution chart with in batches or the combination mode, the rule and be positioned over uniformly in the universal test mask plate;
Step 3, on silicon chip, be coated with photoresist; Exposure, development form required resolution chart;
Step 4, the formed resolution chart critical size of step 3 measured or observes the variation of outward appearance;
Step 5, according to measuring or the result of observation contrasts calibration system and draws the shoulder height that exists in the power device technology.
2. the method for claim 1 is characterized in that: the exposure area size of described universal test mask plate can according in the actual development technology each time the size of exposure adjust; The scribe line width is greater than 300 μ m; Make sign property mark on scribe line, exposure region divides used to do each time.
3. the method for claim 1 is characterized in that: described calibration system is adopted in the following method and is realized, selects some figures relatively more responsive to the technique change reaction, with the graphics combine of one or more shapes as resolution chart; Resolution chart is exposed under different focal by mask aligner, develop; The resolution chart that obtains is measured, and measurement is corresponding with focal length, promptly set up a calibration system.
4. the method for claim 1 is characterized in that: the focal length certification mark that is used for monitoring of tools that described resolution chart is provided for argyle design, dot pattern, strip pattern or each mask aligner equipment vendors.
5. as claim 1 or 4 described methods, it is characterized in that: place some on described resolution chart next door and indicate, so that the variation that naked eyes directly observe resolution chart produce.
6. the method for claim 1, it is characterized in that: described " photoresist " is the I-line that possesses the resolution chart analytic ability, KrF even short wavelength's photosensitizing chemical product material more.
7. the method for claim 1 is characterized in that: also comprise the step of removing photoresist after step 5, to just continuing flow behind the actual silicon chip stripping glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100273477A CN102136438B (en) | 2010-01-21 | 2010-01-21 | Method for quickly detecting segment difference height between stacked frames of chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010100273477A CN102136438B (en) | 2010-01-21 | 2010-01-21 | Method for quickly detecting segment difference height between stacked frames of chip |
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| CN102136438A true CN102136438A (en) | 2011-07-27 |
| CN102136438B CN102136438B (en) | 2012-08-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429047A (en) * | 2019-06-28 | 2019-11-08 | 福建省福联集成电路有限公司 | A kind of gallium arsenide integrated circuit manufacture yellow light area automated system and device |
| CN110767572A (en) * | 2018-07-27 | 2020-02-07 | 无锡华润上华科技有限公司 | Method for monitoring step height of junction region of active region and isolation structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6742168B1 (en) * | 2002-03-19 | 2004-05-25 | Advanced Micro Devices, Inc. | Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device |
| CN101202236A (en) * | 2006-12-15 | 2008-06-18 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring chip step height adopting OCD |
| CN101312138B (en) * | 2007-05-22 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | Method for non-destructively detecting substrate surface appearance |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767572A (en) * | 2018-07-27 | 2020-02-07 | 无锡华润上华科技有限公司 | Method for monitoring step height of junction region of active region and isolation structure |
| CN110767572B (en) * | 2018-07-27 | 2021-11-05 | 无锡华润上华科技有限公司 | Method for monitoring step height of junction region of active region and isolation structure |
| CN110429047A (en) * | 2019-06-28 | 2019-11-08 | 福建省福联集成电路有限公司 | A kind of gallium arsenide integrated circuit manufacture yellow light area automated system and device |
| CN110429047B (en) * | 2019-06-28 | 2021-06-18 | 福建省福联集成电路有限公司 | Automatic system and device for manufacturing yellow light area by gallium arsenide integrated circuit |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |