CN104332460B - Groove pattern monitoring method and groove pattern monitoring structure preparation method - Google Patents
Groove pattern monitoring method and groove pattern monitoring structure preparation method Download PDFInfo
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- CN104332460B CN104332460B CN201410563479.XA CN201410563479A CN104332460B CN 104332460 B CN104332460 B CN 104332460B CN 201410563479 A CN201410563479 A CN 201410563479A CN 104332460 B CN104332460 B CN 104332460B
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Abstract
The present invention provides a kind of groove pattern monitoring method and groove pattern monitoring structure preparation method, the top width and bottom width of second groove in groove pattern monitoring structure are measured using wire width measuring instrument, utilize the depth of step-on testing instrument measurement first groove, the depth of the second groove is obtained according to the depth of the first groove, and according to the top width of the second groove, the depth of bottom width and the second groove, the gradient of the second groove is obtained using the law of tangents, by the top width of the second groove, bottom width and gradient judge the top width of product groove, bottom width and gradient, and then the pattern of product groove is monitored on the premise of chip is not destroyed.
Description
Technical field
The invention belongs to ic manufacturing technology field, more particularly to a kind of groove pattern monitoring method and ditch flute profile
Looks monitoring structure preparation method.
Background technology
Trench process is usually used in making in grid or isolation technology, in the superjunction technique of developed recently, trench process
The P that also applies in superjunction technique, n-type doping.In trench process utilization, the parameter such as its depth and width and gradient all can
Parameter and function on device have vital influence.
The utilization of trench process is exactly largely to reduce primitive unit cell area, so the density of groove is very in trench process
Greatly, width very little, groove pattern is analyzed because the problem of line width suffers from restriction with conventional equipment and method, in actual analysis
In, the analysis of groove pattern typically uses the confirmation of SEM sections, but this belongs to destructive analysis means.How not scrap
On the premise of chip, the problem of more accurate groove topographic data is those skilled in the art's urgent need to resolve is obtained.
The content of the invention
It is an object of the invention to provide a kind of groove pattern monitoring structure, monitoring method and preparation method, core is not being destroyed
Groove topographic data is obtained on the premise of piece.
To solve the above problems, the present invention provides a kind of groove pattern monitoring method, including：
There is provided a groove pattern monitoring structure, the groove pattern monitoring structure includes being formed at the in Semiconductor substrate
One groove and second groove, wherein, form mask plate figure of the mask plate figure of the second groove with forming product groove
Identical, the width for forming the mask plate figure of the first groove is more than the width for the mask plate figure for forming the second groove
Degree, the first groove and second groove are formed using identical etch application；
The top width and bottom width of the second groove are measured using wire width measuring instrument, utilizes step-on testing instrument
Measure the depth of the first groove；
The depth of the second groove is obtained according to the depth of the first groove；And
According to the depth of the top width of the second groove, bottom width and the second groove, determined using tangent
Reason obtains the gradient of the second groove, and then monitors the pattern of product groove.
Optionally, in described groove pattern monitoring method, the depth of second groove is obtained according to below equation：
H1=logam1；
H2=logam2；
Wherein, h1 is the depth of the first groove, and h2 is the depth of the second groove, and m1 is to form first ditch
The width of the mask plate figure of groove, m2 are the width for the mask plate figure to form the second groove, and a is the bottom of logarithmic function
Number.
Optionally, in described groove pattern monitoring method, using the depth of the first groove as second ditch
The depth of groove.
Optionally, in described groove pattern monitoring method, the bottom width of the first groove is more than step-on testing
The minimum probe diameter of instrument, the measurement window of the groove pattern monitoring structure are more than minimum probe diameter and twice of most small step
Away from sum.
Optionally, in described groove pattern monitoring method, the wire width measuring instrument is light microscope, line width instrument
Or CD-SEM.
The present invention also provides a kind of groove pattern monitoring structure, for monitoring the gradient of product groove, the ditch flute profile
Looks monitoring structure includes the first groove and second groove being formed in Semiconductor substrate, wherein, form the second groove
Mask plate figure is identical with the mask plate figure for forming product groove, and the width for forming the mask plate figure of the first groove is big
In the width for the mask plate figure for forming the second groove, the first groove and second groove use identical etch application
Formed.
Optionally, in described groove pattern monitoring structure, the bottom width of the first groove is more than step-on testing
The minimum probe diameter of instrument, the measurement window of the groove pattern monitoring structure be more than the minimum probe diameter of step-on testing instrument with
Twice of minimum step sum.
The present invention more provides a kind of preparation method of groove pattern monitoring structure, including：
Semi-conductive substrate is provided；
First groove and second groove are formed in the Semiconductor substrate；
Wherein, it is identical with the mask plate figure for forming product groove to form the mask plate figure of the second groove, is formed
The width of the mask plate figure of the first groove be more than formed the second groove mask plate figure width, described first
Groove and second groove are formed using identical etch application.
Optionally, in the preparation method of described groove pattern monitoring structure, is formed in the Semiconductor substrate
The step of one groove and second groove, includes：
Mask layer is formed on a semiconductor substrate；
Photoresist layer is coated on the mask layer, and the mask plate of first groove will be corresponded to by exposure and developing process
The mask plate pattern transfer of figure and corresponding second groove is into the photoresist layer；
Using the photoresist layer as mask layer described in mask etching；
Using the mask layer as Semiconductor substrate described in mask etching, first groove and second groove are formed.
Optionally, in the preparation method of described groove pattern monitoring structure, the bottom width of the first groove is big
In the minimum probe diameter of step-on testing instrument, the measurement window of the groove pattern monitoring structure is more than the minimum of step-on testing instrument
Probe diameter and twice of minimum step sum.
Top width and bottom of the present invention using the second groove of wire width measuring instrument measurement groove pattern monitoring structure
Portion's width, the depth of first groove is measured using step-on testing instrument, second ditch is obtained according to the depth of the first groove
The depth of groove, and according to the depth of the top width of the second groove, bottom width and the second groove, utilize tangent
Theorem obtains the gradient of the second groove, is judged by the top width of the second groove, bottom width and gradient
Top width, bottom width and the gradient of product groove, and then product groove is monitored on the premise of chip is not destroyed
Pattern.
Brief description of the drawings
Fig. 1 to Fig. 3 is monitoring structure section in the groove pattern monitoring structure preparation method of the embodiment of the present invention and bowed
Depending on schematic diagram；
Fig. 4 is the schematic flow sheet of the groove pattern monitoring method of the embodiment of the present invention；
Fig. 5 is the schematic flow sheet of the preparation method of the groove pattern monitoring structure of the embodiment of the present invention；
Fig. 6 is the dependency diagram of the depth of the mask plate graphic width of the embodiment of the present invention and the groove formed；
Fig. 7 is the schematic diagram of mask plate figure used by the embodiment of the present invention.
Embodiment
In order to facilitate the understanding of the purposes, features and advantages of the present invention, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Many details are elaborated in the following description in order to fully understand the present invention.But the present invention can be with
Much it is different from other manner described here to implement, those skilled in the art can be in the situation without prejudice to intension of the present invention
Under do similar popularization, therefore the present invention is not limited to the specific embodiments disclosed below.
The present invention provides a kind of groove pattern monitoring structure, for monitoring the gradient of product groove, the groove pattern
Monitoring structure includes the first groove and second groove being formed in Semiconductor substrate, wherein, form covering for the second groove
Diaphragm plate figure is identical with the mask plate figure for forming product groove, and the width for forming the mask plate figure of the first groove is more than
The width of the mask plate figure of the second groove is formed, the first groove and second groove use identical etch application shape
Into.
As shown in figure 4, the present invention also provides a kind of groove pattern monitoring method, comprise the following steps：
S41：A groove pattern monitoring structure is provided, the groove pattern monitoring structure includes being formed in Semiconductor substrate
First groove and second groove, wherein, form the mask plate figure of the second groove with forming the mask plate of product groove
Figure is identical, forms the width of mask plate figure of the first groove more than the mask plate figure for forming the second groove
Width, the first groove and second groove are formed using identical etch application；
S42：The top width and bottom width of the second groove are measured using wire width measuring instrument, is surveyed using step
Try the depth that instrument measures the first groove；
S43：The depth of the second groove is obtained according to the depth of the first groove；
S44：According to the depth of the top width of the second groove, bottom width and second groove, determined using tangent
Reason obtains the gradient of the second groove, and then monitors the pattern of product groove.
As shown in figure 5, the present invention also provides a kind of preparation method of groove pattern monitoring structure, comprise the following steps：
S51：Semi-conductive substrate is provided；
S52：First groove and second groove are formed in the Semiconductor substrate；Wherein, the second groove is formed
Mask plate figure is identical with the mask plate figure for forming product groove, and the width for forming the mask plate figure of the first groove is big
In the width for the mask plate figure for forming the second groove, the first groove and second groove use identical etch application
Formed.
Top width and bottom of the present invention using the second groove of wire width measuring instrument measurement groove pattern monitoring structure
Portion's width, the depth of first groove is measured using step-on testing instrument, second ditch is obtained according to the depth of the first groove
The depth of groove, and according to the depth of the top width of the second groove, bottom width and the second groove, utilize tangent
Theorem obtains the gradient of the second groove, is judged by the top width of the second groove, bottom width and gradient
Top width, bottom width and the gradient of product groove, and then product groove is monitored on the premise of chip is not destroyed
Pattern.
Preparation method and ditch flute profile with reference to Fig. 1 to Fig. 7 to the groove pattern monitoring structure of the embodiment of the present invention
Looks monitoring method is described in more detail.
As shown in Figure 1, there is provided Semiconductor substrate 100, and mask layer 110 is formed in the Semiconductor substrate 100.It is described
Semiconductor substrate 100 can be silicon substrate, germanium silicon substrate, III-group Ⅴ element compound substrate or as well known to those skilled in the art
Other semiconductive material substrates.Using silicon substrate in the present embodiment.More specifically, it is to form work(to be used in the present embodiment
The conventional N-type of rate device<100>The silicon substrate of crystal orientation.The material of mask layer 110 is in silicon nitride, nitrogen oxides or polysilicon
One or more.In the present embodiment, the material of mask layer 110 is the silica of high growth temperature, it is known that, growth temperature is got over
Height, the quality of oxide layer of growth is higher, and the masking effect as etching groove is better.The thickness of the mask layer 110 is, for example,Certainly the present invention does not limit the thickness of mask layer.
As shown in Fig. 2 coating photoresist layer on the mask layer 100, first will be corresponded to by exposure and developing process
The mask plate figure 200a of groove and the mask plate figure 200b of corresponding second groove are transferred in the photoresist layer, then with institute
State photoresist layer and form first window 110a and the second window 110b for mask etching mask layer 110.In the preferred embodiment of the present invention
In, using dry etch process selective removal mask layer, the quarter amount of crossing of the dry etch process is more than 150%, to ensure
Open the mask layer in area to remove totally, acupuncture exception easily occurs in otherwise follow-up cutting.
Wherein, the first window 110a is correspondingly formed the mask plate figure of first groove, and the second window 110b corresponds to shape
Into the mask plate figure of second groove, the mask plate figure for forming first groove and the mask plate figure for forming second groove are
It is square, also, the mask plate figure for forming first groove is identical with the length for the mask plate figure for forming second groove, forms institute
It is identical with the mask plate figure for forming product groove to state the mask plate figure of second groove, forms the mask plate of the first groove
The width of figure is more than the width for the mask plate figure for forming the second groove.110a ' and 110b ' is first respectively in Fig. 2
Window 110a and the second window 110b vertical view figure, from the point of view of top view, first window 110a length L1 and the second window
110b length L2 is identical, and first window 110a width W1 is more than the second window 110b width W2, and the first window
110a width W1 is more than the minimum measurement width of step-on testing instrument.In the present embodiment, the width and length of the first window 110a
Degree is disposed as being more than 10 μm, in favor of subsequently measuring its depth.
As shown in figure 3, being mask with the mask layer 110, the Semiconductor substrate 100 is etched, forms first groove
100a and second groove 100b, wherein, first window 110a is correspondingly formed first groove 100a, and the second window 110b is correspondingly formed
Second groove 100b, ultimately form groove pattern monitoring structure.In the present embodiment, the first groove 100a and second groove
100b depth is 0.1~100 μm, and the gradient of the first groove 100a and second groove 100b are 80~89.9 degree.When
So, the present invention does not limit the depth and gradient of groove.
The present invention measures first groove 100a depth by step-on testing instrument, is sentenced by first groove 100a depth
Disconnected second groove 100b depth, the actual size of second groove 100b analog equipment grooves, its can be with product groove (i.e.
The groove of die area actual product) the consistent monitoring groove of size, certainly, due to being fathomed not using step-on testing instrument
Product structure is destroyed, product groove conduct can also be selected directly using the groove of die area actual product as second groove
Second groove, more accurate response goes out groove structure in tube core when can allow follow-up measurement, calculate groove pattern relevant parameter
Pattern.Wherein, the first groove 100a can be arranged in dicing lane, and second groove 100b is then arranged at die area, when
So, second groove 100b can also be arranged in dicing lane.
Specifically, step-on testing instrument be by its probe contact silicon chip, by probe detect depth it is highly reactive go out silicon
The step appearance of piece.If the width of groove is less than the minimum probe diameter of step-on testing instrument, probe can not reach the bottom of groove
Portion, can not just measure the depth of groove, thus need to make the bottom width of first groove to be more than step-on testing instrument in the present invention
Minimum probe diameter.During due to probe measurement step appearance, silicon chip is contacted by probe during certain step pitch and feeds back
Flatness obtains result, thus preferably in scheme, the measurement window of the groove pattern monitoring structure is at least above minimum
Probe diameter is set plus twice of minimum step.
Formed by the above method after groove pattern monitoring structure, you can carry out ditch using the groove pattern monitoring structure
Groove gradient monitors.
With reference to figure 3, first, the top width W4 and bottom width W5 of the second groove 100b are measured, and utilize platform
Rank tester measures the depth of the first groove 100a.
It is respectively first groove 100a and second groove 100b front plan view shown in 100a ' and 100b ' in Fig. 3.By
It is smaller in second groove 100b sizes, there is gradient (for perpendicular) after over etching, its section is in ladder
Shape, it is in then three-back-shaped to overlook, and second is measured using wire width measuring instruments such as high-precision optical microscope, line width instrument or CD-SEM
Groove 100b vertical view figure, the outside width of second groove 100b vertical view figure is second groove 100b top width
The inboard width of W4, second groove 100b vertical view figure is second groove 100b bottom width W5.First groove 100a
Vertical view figure length L3 and second groove 100b overlook figure length L4 it is identical.
Due to etching groove characteristic, under identical etch application, its gradient of wider groove is closer to 90 degree, Ye Ji
One groove 100a width is bigger, and for its bottom width closer to top width, groove is more straight, in the present embodiment, first groove
100a is because size is larger, and profile is square substantially after over etching, and top view does not differentiate between first groove to be square yet
100a top width and bottom width, it is referred to as the width W3 of first groove.Certainly, because first groove 100a is only intended to
Its depth is measured, so even first groove 100a also has gradient after over etching, nor affects on gradient result of calculation.
Then, second groove 100b depth h2 is obtained according to first groove 100a depth h1.The present invention uses step
Tester measurement first groove 100a depth h1, and then obtain and etch to be formed using identical etch application with first groove 100a
Second groove 100b (in the present embodiment the two be using identical etch application and etch to be formed simultaneously) depth h2.
Found by the applicant inventor's repetition test, under identical etching condition, the larger mask plate figure of width
The depth for the groove that shape is formed is more than the depth for the groove that the less mask plate figure of width is formed, also, different in width is covered
The depth for the groove that diaphragm plate figure is formed follows certain rule, the present invention by made on same mask plate it is multigroup not
With the figure of line width, mask plate graphic width is obtained by theory analysis and test of many times and the depth of groove that is formed
Correlation.
The dependency diagram of the depth of groove that Fig. 6 show mask plate graphic width and formed.Wherein, ditch groove width
Degree is between 2.1~64 μm, and gash depth is between 32~54 μm, after these data points are made into tendency chart, finds mask plate
The depth of graphic width and the groove formed meets logarithmic relationship.In this way, the depth of second groove can be obtained according to below equation
Degree：
H1=logam1；Formula (1)
H2=logam2；Formula (2)
Wherein, h1 is the depth of the first groove 100a, and h2 is the depth of the second groove 100b, and m1 is forms
State the mask plate figure 200a of first groove width, m2 is the width for the mask plate figure 200b to form the second groove, a
For the truth of a matter of logarithmic function, a is calculated by formula (1), h2 can be calculated by formula (2).
From the foregoing, it will be observed that the width m1 of mask plate figure by forming the first groove, forming the second groove
The width m2 of mask plate figure and the first groove 100a depth h1 can calculate the depth of the second groove 100b
Spend h2.
Finally, you can wide according to second groove 100b depth h2 and second groove 100b top width W4 and bottom
W5 is spent, second groove 100b tilt angle theta is calculated using the law of tangents, due to forming the mask plate figure of the second groove
Shape is identical with the mask plate figure for forming product groove, passes through second groove 100b tilt angle theta, you can monitoring product groove
Gradient.
That is, second groove 100b tilt angle theta can be calculated according to below equation：
F=1/2 (W4-W5)；Formula (3)
TAN θ=h2/f；Formula (4)
Second groove 100b depth is obtained using the above method, can be maximum so as to calculate the gradient of second groove
Degree evades the gradient calculation error come due to depth survey error band.
It should be noted that in other embodiments of the present invention, also can be directly using the depth of the first groove as institute
The depth of second groove is stated to calculate groove gradient, as shown in table 1, using the method that gradient is calculated in the present embodiment, when
After the top and bottom width measure of groove comes out, being 5.02 μm by 5.36 μm, trench bottom width of the top of the groove width is
, in the case of 10 μm of the change in depth of groove, its groove gradient only has 0.24 degree of difference, also receives model in process monitoring
In enclosing.
Table 1
In summary, the present invention can combine with goods batch, by measure the depth that is formed in first groove and
With the top width and bottom width of product groove dimensions identical second groove, the number of degrees are more accurately tilted by being calculated
According to judging top width, the bottom width of product groove by the top width of the second groove, bottom width and gradient
And gradient, and then on the premise of chip is not destroyed monitor product groove pattern.
The present invention can apply to any field of semiconductor manufacture for having monitoring demand to groove pattern, for example, can transport
For in the products such as power MOSFET, IGBT and MEMS.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting claim, any this area
Technical staff without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore the present invention
Protection domain should be defined by the scope that the claims in the present invention are defined.
Claims (3)
- A kind of 1. groove pattern monitoring method, it is characterised in that including：A groove pattern monitoring structure is provided, the groove pattern monitoring structure includes the first ditch being formed in Semiconductor substrate Groove and second groove, wherein, it is identical with the mask plate figure for forming product groove to form the mask plate figure of the second groove, The width for forming the mask plate figure of the first groove is more than the width for the mask plate figure for forming the second groove, described First groove and second groove are formed using identical etch application；The top width and bottom width of the second groove are measured using wire width measuring instrument, is measured using step-on testing instrument The depth of the first groove；The depth of the second groove is obtained according to below equation：H1=logam1；H2=logam2；Wherein, h1 is described first The depth of groove, h2 are the depth of the second groove, and m1 is the width for the mask plate figure to form the first groove, and m2 is The width of the mask plate figure of the second groove is formed, a is the truth of a matter of logarithmic function；AndAccording to the depth of the top width of the second groove, bottom width and the second groove, obtained using the law of tangents The gradient of the second groove is obtained, and then monitors the pattern of product groove.
- 2. groove pattern monitoring method as claimed in claim 1, it is characterised in that the bottom width of the first groove is more than The minimum probe diameter of step-on testing instrument, the measurement window of the groove pattern monitoring structure are more than the minimum spy of step-on testing instrument Pin diameter and twice of minimum step sum.
- 3. the groove pattern monitoring method as any one of claim 1 to 2, it is characterised in that the wire width measuring work Tool is light microscope, line width instrument or CD-SEM.
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| CN108010869B (en) * | 2017-11-21 | 2020-09-29 | 上海华力微电子有限公司 | Method for accurately controlling overall appearance and performance of shallow trench isolation |
| CN108091560B (en) * | 2017-12-07 | 2020-04-10 | 上海华力微电子有限公司 | Method for optimizing shallow slot isolation etching morphology under different light transmittances |
| CN110470683B (en) * | 2019-08-22 | 2021-12-14 | 福建省晋华集成电路有限公司 | Method for determining depth of groove |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101211803A (en) * | 2006-12-25 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Groove contour parameter detection method |
| US7483560B2 (en) * | 2003-01-17 | 2009-01-27 | Hitachi High-Technologies Corporation | Method for measuring three dimensional shape of a fine pattern |
| CN102097287A (en) * | 2009-12-15 | 2011-06-15 | 北大方正集团有限公司 | Method for monitoring chip groove depth and wafer |
| CN103065992A (en) * | 2012-12-14 | 2013-04-24 | 上海集成电路研发中心有限公司 | Semiconductor surface structure side wall characterization method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001201323A (en) * | 2000-01-20 | 2001-07-27 | Nec Corp | Groove depth measuring method and measuring device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7483560B2 (en) * | 2003-01-17 | 2009-01-27 | Hitachi High-Technologies Corporation | Method for measuring three dimensional shape of a fine pattern |
| CN101211803A (en) * | 2006-12-25 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Groove contour parameter detection method |
| CN102097287A (en) * | 2009-12-15 | 2011-06-15 | 北大方正集团有限公司 | Method for monitoring chip groove depth and wafer |
| CN103065992A (en) * | 2012-12-14 | 2013-04-24 | 上海集成电路研发中心有限公司 | Semiconductor surface structure side wall characterization method |
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