CN106548930B - A method of reducing exposure focal length error - Google Patents
A method of reducing exposure focal length error Download PDFInfo
- Publication number
- CN106548930B CN106548930B CN201610924503.7A CN201610924503A CN106548930B CN 106548930 B CN106548930 B CN 106548930B CN 201610924503 A CN201610924503 A CN 201610924503A CN 106548930 B CN106548930 B CN 106548930B
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- China
- Prior art keywords
- laser
- focal length
- length error
- reducing exposure
- exposure focal
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of methods for reducing exposure focal length error, comprising: first step: substrate deposition dielectric layer, and laser reflection coating, bottom anti-reflection layer and photoresist layer are sequentially formed on dielectric layer；Second step: the topographical height of crystal column surface is determined using laser interferometer.Wherein, laser reflection coating has the blocking effect for preventing from penetrating for laser identical with the color of alignment mark.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular to the photoetching process in semiconductors manufacture；More specifically, originally
Invention is related to a kind of method for reducing exposure focal length error.
Background technique
In back segment (process flow after contact hole layer) photoetching process, in exposure machine exposure, crystal column surface is determined
Difference in height generally require and use red green laser interferometer.Wherein, interferometer emits laser to crystal column surface, then measures reflection
Laser back, obtains the height of crystal column surface, and required focal length when exposure is then calculated.
But due to many materials of crystal column surface for red green laser almost it is transparent, so measurement when laser often
Crystal column surface has been squeezed into, the crystal column surface height of mistake is obtained.In order to solve this problem, the solution that the prior art proposes
It is to assist a blow gas pressure formula height-gauge again, blows to crystal column surface, measurement crystal column surface pressure change is come with this
To crystal column surface height；Then both interferometer and air blowing height-gauge act on the accurate shape that crystal column surface is calculated simultaneously
Looks height.
Accordingly, it is desirable to be able to provide a kind of method that can efficiently reduce in a simple manner exposure focal length error.
Summary of the invention
The technical problem to be solved by the present invention is to for drawbacks described above exists in the prior art, providing one kind can be with letter
The method that folk prescription formula efficiently reduces exposure focal length error.
In order to achieve the above technical purposes, according to the present invention, a kind of method for reducing exposure focal length error, packet are provided
Include: first step: substrate deposition dielectric layer, and sequentially form on dielectric layer laser reflection coating, bottom anti-reflection layer and
Photoresist layer；Second step: the topographical height of crystal column surface is determined using laser interferometer.
Preferably, in the method for reducing exposure focal length error, the material of laser reflection coating is organic material.
Preferably, in the method for reducing exposure focal length error, laser reflection coating is for the face with alignment mark
The identical laser of color has the blocking effect for preventing from penetrating.
Preferably, in the method for reducing exposure focal length error, the color of alignment mark is red or green.
Preferably, in the method for reducing exposure focal length error, laser reflection coating does not have the work for stopping etching
With.
Preferably, in the method for reducing exposure focal length error, laser reflection coating has and bottom anti-reflection layer
The same or similar etch-rate of material.
Preferably, in the method for reducing exposure focal length error, in the first step, grid knot is formed on the substrate
Structure, and gate structure is connected to metal layer by contact hole.
Preferably, in the method for reducing exposure focal length error, contact hole and metal layer are in laser reflection coating
Lower section.
Preferably, in the method for reducing exposure focal length error, substrate is silicon substrate.
Preferably, in the method for reducing exposure focal length error, between laser reflection coating and bottom anti-reflection layer
Interface be plane that laser interferometer detects.
By improving technique, in the case where not needing to increase ancillary equipment, existing equipment can be only used only in the present invention
It can obtain more accurately crystal column surface height.That is, the present invention, which does not need additional scrap build, can obtain standard
True crystal column surface height (leveling map) data reduce bottom front layer (substrate or pre-layer) reflectivity and become
It is interfered caused by change.Moreover, improving yield invention increases process window.
Detailed description of the invention
In conjunction with attached drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantage and feature is more easily to understand, in which:
Fig. 1 schematically shows the process of the method according to the preferred embodiment of the invention for reducing exposure focal length error
Figure.
Fig. 2 schematically shows the signals of the method according to the preferred embodiment of the invention for reducing exposure focal length error
Figure.
It should be noted that attached drawing is not intended to limit the present invention for illustrating the present invention.Note that indicating that the attached drawing of structure can
It can be not necessarily drawn to scale.Also, in attached drawing, same or similar element indicates same or similar label.
Specific embodiment
In order to keep the contents of the present invention more clear and understandable, combined with specific embodiments below with attached drawing in of the invention
Appearance is described in detail.
In the present invention, bottom in the bottom anti-reflection layer of conventional lithography adhesive process, it is coated a thin layer of organic
Material, this organic material is for red (either green) laser (or for subsequent using come the laser interferometer that measures apparent height
The laser of transmitting) there is the not transparent effect of blocking, while this organic material requires the downward etching for not stopping etching, has same
The same or similar etch-rate of upper layer of material.Using the bridging effect of this material, the ground material variation under material will no longer
Measurement of the interferometer to crystal column surface height is influenced, so as to obtain accurate crystal column surface topographical height.This material pair simultaneously
Do not have blocking effect in green (either red) laser (perhaps alignment laser used) and green (or red) is used for alignment mark
Color laser (or other color alignments laser) does not influence to be aligned when alignment.
Particularly preferred embodiment of the invention is described below.
Fig. 1 schematically shows the process of the method according to the preferred embodiment of the invention for reducing exposure focal length error
Figure.Fig. 2 schematically shows the schematic diagrames of the method according to the preferred embodiment of the invention for reducing exposure focal length error.
As depicted in figs. 1 and 2, the method according to the preferred embodiment of the invention for reducing exposure focal length error includes:
First step S1: 100 metallization medium layer 201 of substrate, and laser reflection coating is sequentially formed on dielectric layer 201
500, bottom anti-reflection layer 600 and photoresist layer 700；
Generally, substrate 100 is silicon substrate.Moreover, for example, forming gate structure on substrate 100 in first step S1
200, and gate structure 200 is connected to metal layer 400 by contact hole 300.Moreover, contact hole 300 and metal layer 400 are located
In the lower section of laser reflection coating 500.
Preferably, the material of laser reflection coating 500 is organic material.Preferably, laser reflection coating 500 for it is right
The identical laser of color (general, the color of alignment mark is red or green) of fiducial mark note, which has, prevents the blocking penetrated from imitating
Fruit.Preferably, laser reflection coating 500 does not have the effect for stopping etching, i.e., does not stop the downward etching of etching.Preferably,
Laser reflection coating 500 has the etch-rate same or similar with the material of bottom anti-reflection layer 600.
It should be noted that ordinary circumstance, the color of alignment mark is red or green, but mentioned by the present invention
Alignment mark color is not limited only to red or green.Therefore, the present invention can also be for other than red or green
Color.
Second step S2: the topographical height of crystal column surface is determined using laser interferometer 800.Wherein, laser reflection applies
Interface between layer 500 and bottom anti-reflection layer 600 is the plane that laser interferometer 800 detects.
The present invention is bottom in the bottom anti-reflection layer of conventional lithography adhesive process, is coated a thin layer of organic material,
This organic material (or subsequent measures swashing for the transmitting of laser interferometer used in crystal column surface height for red (either green) laser
Light) there is the not transparent effect of blocking, while this organic material requires the downward etching for not stopping etching, has ibid layer material
Same or similar etch-rate.Using the bridging effect of this material, the ground material variation under material will no longer affect interference
Measurement of the instrument to crystal column surface height, so as to obtain accurate crystal column surface topographical height.Simultaneously this material for it is green (or
It is red) color laser (perhaps other color alignment laser) do not have blocking effect for alignment mark we using it is green (or
It is red) color laser (or other color laser) do not influence to be aligned when be aligned.
The present invention is by improving technique as a result, in the case where not needing to increase ancillary equipment, can only be used only existing
Equipment can obtain more accurately crystal column surface height.In other words, existing machinery equipment can be used to obtain accurately for the present invention
Surface topography height.Moreover, improving yield invention increases process window.
In addition, it should be noted that, unless stated otherwise or point out, the otherwise term " first " in specification, "
Two ", the descriptions such as " third " are used only for distinguishing various components, element, the step etc. in specification, each without being intended to indicate that
Component, element, the logical relation between step or ordinal relation etc..
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible changes and modifications all are made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of variation.Therefore, anything that does not depart from the technical scheme of the invention are right according to the technical essence of the invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments still fall within the range of technical solution of the present invention protection
It is interior.
And it should also be understood that the present invention is not limited thereto and locate the specific method described, compound, material, system
Technology, usage and application are made, they can change.It should also be understood that term described herein be used merely to describe it is specific
Embodiment, rather than be used to limit the scope of the invention.Must be noted that herein and appended claims used in
Singular "one", "an" and "the" include complex reference, unless context explicitly indicates that contrary.Therefore, example
Such as, the citation to one or more elements is meaned to the citation of " element ", and including known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
The citation of multiple steps or device, and may include secondary step and second unit.It should be managed with broadest meaning
All conjunctions that solution uses.Therefore, word "or" should be understood that the definition with logical "or", rather than logical exclusive-OR
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as the function of also quoting from the structure
Equivalent.It can be interpreted that approximate language should be understood like that, unless context explicitly indicates that contrary.
Claims (9)
1. a kind of method for reducing exposure focal length error, characterized by comprising:
First step: substrate deposition dielectric layer, and sequentially form on dielectric layer laser reflection coating, bottom anti-reflection layer and
Photoresist layer, laser reflection coating have the blocking effect for preventing from penetrating for laser identical with the color of alignment mark, and
Laser reflection coating does not have blocking effect for being directed at laser used；
Second step: the topographical height of crystal column surface is determined using laser interferometer.
2. the method according to claim 1 for reducing exposure focal length error, which is characterized in that the material of laser reflection coating
For organic material.
3. the method according to claim 1 or 2 for reducing exposure focal length error, which is characterized in that the color of alignment mark
For red or green.
4. the method according to claim 1 or 2 for reducing exposure focal length error, which is characterized in that laser reflection coating is not
Have the function of stopping etching.
5. the method according to claim 1 or 2 for reducing exposure focal length error, which is characterized in that laser reflection coating tool
There is the etch-rate same or similar with the material of bottom anti-reflection layer.
6. the method according to claim 1 or 2 for reducing exposure focal length error, which is characterized in that in the first step,
Gate structure is formed on substrate, and gate structure is connected to metal layer by contact hole.
7. the method according to claim 6 for reducing exposure focal length error, which is characterized in that contact hole and metal layer are in
The lower section of laser reflection coating.
8. the method according to claim 1 or 2 for reducing exposure focal length error, which is characterized in that substrate is silicon substrate.
9. it is according to claim 1 or 2 reduce exposure focal length error method, which is characterized in that laser reflection coating and
Interface between bottom anti-reflection layer is the plane that laser interferometer detects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610924503.7A CN106548930B (en) | 2016-10-24 | 2016-10-24 | A method of reducing exposure focal length error |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610924503.7A CN106548930B (en) | 2016-10-24 | 2016-10-24 | A method of reducing exposure focal length error |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106548930A CN106548930A (en) | 2017-03-29 |
| CN106548930B true CN106548930B (en) | 2019-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610924503.7A Active CN106548930B (en) | 2016-10-24 | 2016-10-24 | A method of reducing exposure focal length error |
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| CN114203789A (en) * | 2021-12-10 | 2022-03-18 | 深圳市华星光电半导体显示技术有限公司 | Panel anode repairing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444995B1 (en) * | 1999-01-22 | 2002-09-03 | Samsung Electronics Co., Ltd. | Focussing method and system of exposure apparatus |
| CN101180706A (en) * | 2005-10-05 | 2008-05-14 | 株式会社尼康 | Exposure apparatus and exposure method |
| JP2009094208A (en) * | 2007-10-05 | 2009-04-30 | Sekisui Chem Co Ltd | Film thickness measuring equipment for surface processing |
| CN105719981A (en) * | 2014-12-04 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure, and formation method thereof |
-
2016
- 2016-10-24 CN CN201610924503.7A patent/CN106548930B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444995B1 (en) * | 1999-01-22 | 2002-09-03 | Samsung Electronics Co., Ltd. | Focussing method and system of exposure apparatus |
| CN101180706A (en) * | 2005-10-05 | 2008-05-14 | 株式会社尼康 | Exposure apparatus and exposure method |
| JP2009094208A (en) * | 2007-10-05 | 2009-04-30 | Sekisui Chem Co Ltd | Film thickness measuring equipment for surface processing |
| CN105719981A (en) * | 2014-12-04 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure, and formation method thereof |
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| Publication number | Publication date |
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| CN106548930A (en) | 2017-03-29 |
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