CN103488063B - A kind of alignment mark and preparation method thereof - Google Patents
A kind of alignment mark and preparation method thereof Download PDFInfo
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- CN103488063B CN103488063B CN201210190822.1A CN201210190822A CN103488063B CN 103488063 B CN103488063 B CN 103488063B CN 201210190822 A CN201210190822 A CN 201210190822A CN 103488063 B CN103488063 B CN 103488063B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
A kind of alignment mark and preparation method thereof, this alignment mark adopts anisotropic etching fabrication techniques to be formed, and because the etch rate of anisotropic etching on the different crystal face of wafer is inconsistent, can etch specific crystal face on wafer.The V-type groove formed according to this feature, because two groove faces are all the crystal faces with particular crystal orientation, so its folded piston ring land line formed also must collimate in wafer crystal orientation.Therefore alignment mark of the present invention can avoid the bit errors that wafer production process is introduced, and improves degree of accuracy and the accuracy of follow-up alignment process.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of alignment mark and preparation method thereof.
Background technology
From early 1960s up till now, lithography alignment technology is aimed to develop into from initial light field and details in a play not acted out on stage, but told through dialogues and is interfered holography or the holographic technique of alignment of difference interference and mixing to be mated and thick, fine alignment technology of today, alignment precision brings up to nanoscale by original micron order, facilitates the development of integrated circuit.China " Review of Alignment Technology for Lithography)) (total 117th phase in 2004,30 to 34 page) look back the development function of lithography alignment technology, analysis and inspection is carried out to the principle of various alignment methods and feature, has described several typical main flow lithography alignment system configurations.
Along with the development of integrated circuit, electronic devices and components that can be integrated in monolithic chip also get more and more, at present in monolithic chip the device populations of accessible site more than 1,000,000,000.But wafer is when producing from wafer factory, its surface is the pure crystal face not containing any device.Semiconductor production manufacturer needs on the surface of naked crystalline substance by plated film repeatedly and photoetching process, the final semiconductor devices forming certain function.Almost each step photoetching process all relates to the process of contraposition.
So-called contraposition or alignment procedures, refer to by the machine recognition on lithographic equipment or the special alignment mark of eye recognition substrate surface, thus make postchannel process and front road technique have overlap on position.For wafer, the alignment mark of first time photoetching needs to be produced on substrate surface as required.The whole manufacturing process of quality on semiconductor devices of this photoetching alignment mark has very important impact: the first, which determines the position precision of follow-up all devices; The second, it also identifies the lattice arrangement direction of crystal column surface.Importance for second point is, time wafer is cut into wafer from crystal column, often all need the cut direction determining wafer according to follow-up purposes, the such as wafer in <100> crystal orientation is used for manufacturing MOS device and circuit, and the wafer in <111> crystal orientation is used for manufacturing bipolar device and circuit.Gallium arsenide can only cut along <100> crystal face.Thus, on the wafer of different crystal orientations, the alignment mark of head time photoetching also needs the function with this wafer crystal orientation of mark.
The method of a kind of existing making head time photoetching alignment mark is, flat limit when dispatching from the factory according to wafer, by wafer location in the lithographic apparatus, and the alignment mark going out to need by chemical wet etching.Although ASML now, NIKON, the novel litho machine of the companies such as CANON is all built-in high-precision optics is to Ping Bian mechanism, the bit errors introduced by litho machine is very little, but be limited to technological level, the crystal orientation of the wafer that wafer factory produces cannot ensure that definitely accurately meanwhile, also there is error in the crystal orientation on wafer indicated by flat limit and actual crystal orientation usually.Various error superposition above, the angle between the alignment mark figure causing the flat limit contraposition of direct basis wafer to be produced and actual crystal orientation is larger.
Therefore, be necessary to propose a kind of new alignment mark method for making, the problems of the prior art are resolved.
Summary of the invention
In view of this, the present invention proposes a kind of alignment mark and preparation method thereof, the main identification line in this alignment mark strictly collimates in a particular crystal orientation, and not by the impact of manufacture craft, makes this alignment mark guarantee the contraposition degree of accuracy of the first photoetching.
A kind of alignment mark that object according to the present invention proposes, being formed at one has in the wafer substrate of substrate orientation, described alignment mark comprises the first V-type groove and the second V-type groove, the piston ring land line of this first V-type groove and the second V-type groove is orthogonal, two the first groove faces of this first V-type groove described and two the second groove faces of described second V-type groove have the surface orientation of same family of crystal planes, and this surface orientation is different from described substrate orientation, wherein two folded piston ring land lines formed of the first groove face strictly collimate in Substrate orientation.
Preferably, described substrate orientation is (100).
Preferably, the surface orientation of described two the first groove faces and two the second groove faces is { 111} face.
Preferably, the piston ring land line of described first V-type groove and the piston ring land line straight line intersection of the second V-type groove, form cruciform.
Preferably, the piston ring land line of the first V-type groove and the piston ring land line of the second V-type groove are formed to misplace and intersect.
The present invention proposes the method for making of above-mentioned alignment mark, the method comprising the steps of simultaneously:
The wafer substrate that one has a substrate orientation is provided, makes one deck mask layer over the substrate;
Described mask layer etches the surfacial pattern of alignment mark, and the region corresponding to the surfacial pattern of described alignment mark exposes substrate;
One anisotropic etching step is carried out to the substrate region that described mask layer comes out, according to the alignment mark surfacial pattern on mask layer, substrate obtains alignment mark.
Preferably, described mask layer comprises the lamination of photoresist, dielectric material, the lamination of dielectric material, dielectric and semiconductor material, or the lamination of dielectric material and photoresist.
Preferably, the surfacial pattern of the alignment mark on described mask layer is hollow cruciform.
Preferably, described anisotropic etching is wet-etching technology or reactive ion etching process.
Preferably, the etching liquid in described wet-etching technology is potassium hydroxide solution or tetramethyl ammonium hydroxide solution.
Above-mentioned alignment mark and preparation method thereof, by adopting anisotropic etching fabrication techniques to be formed, because the etch rate of anisotropic etching on the different crystal face of wafer is inconsistent, can etch specific crystal face on wafer.The V-type groove formed according to this feature, because two groove faces are all the crystal faces with particular crystal orientation, so its folded piston ring land line formed also must collimate and wafer crystal orientation.Therefore alignment mark of the present invention can avoid the bit errors that wafer production process is introduced, and improves degree of accuracy and the accuracy of follow-up alignment process.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the alignment mark structural representation under first embodiment of the invention;
Fig. 2 is the sectional view in AA cross section in Fig. 1;
Fig. 3 is the alignment mark structural representation under second embodiment of the invention;
Fig. 4 and Fig. 5 is alignment mark method for making process flow diagram under the first embodiment of the present invention and structure variation diagram;
Fig. 6 is the alignment mark surfacial pattern schematic diagram under the flat limit of wafer and the first embodiment on mask layer;
Fig. 7 is the enlarged drawing in Fig. 6 in dotted line frame;
Fig. 8 is the alignment mark surfacial pattern schematic diagram under the second embodiment on mask layer;
Fig. 9 and Figure 10 be respectively alignment mark in the first embodiment and the second embodiment use schematic diagram.
Embodiment
As described in the background art, in existing alignment mark manufacturing process, litho machine needs the flat limit relying on wafer itself as contraposition object of reference.Although the accuracy of identification of litho machine itself has developed a limit, make to reach requirement by the contraposition degree of accuracy on flat limit, but because the Ping Bianben of wafer is in manufacturing process, inevitable fabrication error can be introduced, namely the machine error existed in the cutting and process of lapping of wafer, therefore using flat limit as the alignment mark made with reference to thing, also inevasible can exist certain error.These errors not only affect the setting accuracy in subsequent device manufacturing process, when some needs the element manufacturing relying on wafer orientation, also can affect the optimum working performance of device because of the crystal orientation not aiming at wafer.
Therefore the present invention is for solving the problem, and proposes a kind of alignment mark and preparation method thereof, and the method for making of this alignment mark utilizes anisotropic etching technology, produces on wafer substrate surface the V-type groove having and intersect vertically.Anisotropic etching technology described here, refer to when crystal column surface is etched, different along the etch rate on different crystal orientations, for three kinds of modal wafer substrate (100), (110), (111), suppose that the orientation of wafer is (110), if the ratio of etch rate on (111) crystal orientation and (110) crystal orientation is 2:1, then be anticipated that, the degree of depth of etching groove structure out on (111) direction, than the showed increased on (110), makes groove demonstrate obvious rectangle.By the selection of concrete etching technics, such as etching liquid, etching ion or chemical treatment is done to the etched surface of wafer, the crystal face etch rate difference of anisotropic etch process on different orientation can be made more outstanding, on some crystal faces, even occur that etch rate is zero.The groove structure now etching out, just likely occurs with etch rate being that the crystal face at zero place is for groove face formation V-type groove.Now, the piston ring land of V-type groove is formed folded by the groove face by two particular crystal orientation, therefore this piston ring land line must along a certain lattice arrangement direction, using this V-type groove as alignment mark, the crystal orientation strict conformance with wafer substrate can be guaranteed, and because this technique is just few to the dependence on the flat limit of wafer, there is not the impact of fabrication error, substantially increase the degree of accuracy of contraposition.
To be described in detail alignment mark of the present invention and preparation method thereof below.
For the ease of understanding inventive concept of the present invention, first several technical term of the present invention is defined.
" substrate orientation ", when referring to that wafer dispatches from the factory, the crystal column surface initial orientation formed in cutting technique.In practical application, the substrate orientation of wafer is made into (100), (110) and (111) three kinds of orientations usually.
" surface orientation ", refers to that wafer substrate is after processing, formation with substrate surface, there is the local real surface of certain angle, the crystal orientation at this real surface place, local is defined as the surface orientation of this local real surface.
" anisotropic etching ", refers to the etching technics along different crystal orientation with different etch rates.In the present invention, " anisotropic etching " especially has etch rate on substrate orientation, and in other orientation different from this substrate orientation, do not have etch rate, and this another orientation not forms parallel or vertical relation with substrate orientation.The etching structure of formation like this, its groove face is likely just the V-type groove along a certain particular crystal orientation.
Table one gives the angular relationship that the wafer of three kinds of various substrates orientations and other surface orientation place crystal faces are formed:
The crystal orientation representative represented with " { } " in table has the family of crystal planes of same feature.
As can be seen from the above table, as long as the anisotropic etch process etch rate met on other crystal orientation except substrate orientation carried out three kinds of substrates is zero, just can realize etching the said V-type groove with particular surface orientation of the present invention.
To be clearly and completely described technical scheme of the present invention by embodiment below.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 1 and Fig. 2, Fig. 1 is the alignment mark structural representation under first embodiment of the invention, and Fig. 2 is the sectional view in AA cross section in Fig. 1.As shown in the figure, this alignment mark is arranged over the substrate 10, this alignment mark comprises the first V-type groove 11 and the second V-type groove 12 in the horizontal direction of in the vertical direction, the piston ring land line 111 of this first V-type groove 11 and the piston ring land line 121 of the second V-type groove 12 orthogonal, in the present embodiment, these two piston ring land lines are in line intersection, make these two piston ring land lines form the cruciform of standards.Two the first groove faces 112 of this first V-type groove described and two the second groove faces 122 of described second V-type groove 12 have the surface orientation of same family of crystal planes, and this surface orientation is different from described substrate orientation, in the present embodiment, the substrate orientation of described substrate 10 is (100), and the surface orientation of two the first groove faces 112 and two the second groove faces 122 is all { 111}.According to the angular relationship in table 1, now can know that the angle β between groove face and substrate plane should be 54.7 degree.In other embodiment, also can adopt other substrate orientation and surface orientation setting each face above-mentioned.According to geometric relationship, the piston ring land line 111 of the now folded formation of two the first groove faces 112 or the piston ring land line 121 of the folded formation of two the second groove faces 122 strictly collimate the crystal orientation { 100} in substrate.It is noted herein that according to the definition of solid state physics, { 100} should comprise six direction, respectively (100), (010), (001) and other three directions contrary with these three directions in crystal orientation.
Refer to Fig. 3, Fig. 3 is the alignment mark structural representation under second embodiment of the invention.In the present embodiment, the piston ring land line 211 of the first V-type groove 21 and the piston ring land line 221 of the second V-type groove 22 form dislocation and intersect, described dislocation is intersected and is referred to that piston ring land line 211 has a dislocation in the place crossing with piston ring land line 221, make this piston ring land line 211 with piston ring land line 221 for interfacial upper and lower two parts not on the same line and be parallel to each other.Equally, piston ring land line 221 also has a dislocation in the place crossing with piston ring land line 211, make this piston ring land line 221 with piston ring land line 211 for interfacial left and right two parts not on the same line and be parallel to each other.The reason forming this kind of structure be alignment mark in manufacturing process, the crystal orientation of the flat limit of the wafer due to initial contraposition and wafer has an angle, makes the cross figure of alignment mark also form certain angle with crystal orientation.Below in the method for making introducing alignment mark of the present invention, will elaborate to this.
Refer to Fig. 4 and Fig. 5, Fig. 4 and Fig. 5 is alignment mark method for making process flow diagram under the first embodiment of the present invention and structure variation diagram.As shown in the figure, this method for making comprises step:
S11: the wafer substrate 10 that has a substrate orientation is provided, this substrate 10 makes one deck mask layer 13.
Described wafer substrate 10 is (100) crystal face in one embodiment, can be (110) face or (111) face in other embodiments.
Described mask layer 13 follow-up backing material is etched time, play the effect of stop, namely when etching substrate, selected etching liquid or etching ion and this layer mask layer 13 do not participate in reacting or reacting very slowly, make the exposed region that etch areas is only limitted in mask layer 13.The material of this mask layer 13 can for comprising the lamination of photoresist, dielectric material, the lamination of dielectric material, dielectric and semiconductor material, or the lamination of dielectric material and photoresist.The method making this mask layer 13 can comprise the filming technologies such as physical vapour deposition (PVD), chemical vapor deposition, sputtering sedimentation, thermal oxide, growth in situ, spin coating.
S12: the surfacial pattern 131 etching alignment mark on aforementioned mask layer 13, the region corresponding to this surfacial pattern 131 exposes substrate 10.
For the etching technics of this mask layer 13, dry etching or wet etching can be adopted.Such as when the material of mask layer 13 is photoresist, adopt reticle mask exposure technique, mask layer 13 exposes required figure, then use developer solution cleaning, gone out by the photoresist of exposure area, the substrate exposed below comes.And when adopting other material as mask layer 13, then need spin coating photoresist (i.e. photoresist) or other photosensitive materials on this mask layer 13, then exposed the region of required etching by exposure technology, then carried out the etching of alignment mark surfacial pattern by dry method or wet etching.
Here it may be noted that, in this step, position for alignment mark surfacial pattern is determined, need the flat limit relying on wafer as object of reference, namely the initial contraposition of litho machine is carried out with the flat limit of wafer, as shown in Figure 6, the flat limit 101 of wafer is unique edge with crystal orientation instruction, and this flat limit 101 is usually designed to the direction along wafer crystal orientation.Under the error condition not considering this flat limit 101, the figure now etching out on mask layer 13 as shown in Figure 7, is a positive hollow cruciform, and criss-cross at least one limit of this hollow, be strictly parallel to crystal orientation.
S13: carry out an anisotropic etching step to the substrate region that aforementioned mask layer 13 comes out, according to the alignment mark surfacial pattern 131 on mask layer 13, substrate obtains alignment mark.
Described anisotropic etching can be wet-etching technology or reactive ion etching process, and the anisotropic etching of two types all needs to have different etch rates along the different crystal faces of substrate.At the end of anisotropic etching, formed along it for the lower crystal face of etch rate in anisotropic etch process.Pound in a kind of concrete embodiment, substrate, using KOH aqueous solution as etching liquid, is left standstill corrosion by this anisotropic etch process in the water-bath of 70 degree.The etch rate of KOH etching liquid on (100) face is nearly 100 times of (111) face, and the surface orientation of two groove faces of the V-type groove now formed is { 111}.In another embodiment, this anisotropic etch process using pure TMAH (Tetramethylammonium hydroxide) solution as etching liquid, in order to formed { 110} face.In another embodiment, this anisotropic etch process adopts the reactive ion etching in DRAM (dynamic RAM) technique, this technique can etch on substrate { 110} face.
After having etched, form the alignment mark of first embodiment of the invention.
Introduce the method for making of the alignment mark of the second embodiment below again.In this embodiment, the main flat limit of consideration wafer produces error in making, therefore the crystal orientation of wafer has a selected angle relatively, now, litho machine carries out the graph position of the alignment mark that contraposition is decided according to this flat limit, also there is certain anglec of rotation in the flat limit of relative wafer, refers to Fig. 8.In Fig. 8, the hollow cruciform that mask layer etches out, certain angle is there is with wafer crystal orientation in order to represent, be drawn as askew angle (relative Fig. 7) by signal, when now carrying out anisotropic etching to the substrate below this alignment mark surfacial pattern, the angle due to etched surface is certain, so after the criss-cross top and the bottom of hollow and left-right parts have etched, respective generation one dislocation, see Fig. 3, forms the structure of alignment mark as shown in Figure 3.In present embodiment, all the other are identical with the first embodiment one, do not repeat them here.
Introducing the process of being carried out alignment operation by alignment mark of the present invention below.Refer to Fig. 9 and Figure 10, Fig. 9 and Figure 10 be respectively alignment mark in the first embodiment and the second embodiment use schematic diagram.As shown in the figure, alignment mark of the present invention is in order to the contraposition process of light shield in photoetching process and substrate, and now, the body alignment mark being provided with a square or rectangle on light shield substrate is of the present invention with reference to body alignment mark.Body alignment mark is moved, with two adjacent sides of square or rectangle for comparison other, contraposition is carried out with any two adjacent sides with reference to the cross structure on alignment mark, if the translation position between wafer substrate and light shield is relatively correct, two adjacent sides then on body alignment mark just in time cover with reference to two adjacent sides on alignment mark, otherwise then have at least one not cover with reference to the limit on alignment mark.In like manner, if the position of rotation between wafer substrate and light shield is relatively correct, then two adjacent sides on body alignment mark just in time cover with reference to two adjacent sides on alignment mark, otherwise then have at least one not cover with reference to the limit on alignment mark.
For the concrete structure of alignment mark of the present invention, when based on inventive concept, suitable distortion can be made, such as alignment mark is designed to alignment mark (many crossing V-type groove) and other possible shape of single straight line (only comprising a V-type groove), square or rectangle.It is emphasized, however, that the alignment mark of cross-shaped configuration disclosed by embodiment of the present invention, there is following advantage: the contraposition usually in photoetching process, need the microscope relied on eye-observation litho machine to carry out.If only adopt single straight line as alignment mark, then need by eye-observation body alignment mark whether parallel with object of reference alignment mark, now the piston ring land line of V-type groove is longer in principle, more easily judge that whether crestal line is parallel with alignment mark on photolithography plate, but litho machine microscopic fields of view is limited in scope, if crestal line is oversize exceed microscopic fields of view, equally cannot contraposition.When adopting the alignment mark of other structures to carry out contraposition, because litho machine microscopic fields of view is generally circular or square, so or only make use of one piece of superfine region that crestal line in litho machine microscopic fields of view occupies, or exceed the microscopical visual field of litho machine.And adopt the alignment mark of two of cross structure V groove compositions can make full use of litho machine visual field, when V-type slot length is constant simultaneously two axially contrapositions, aligning accuracy is significantly improved.
In sum, the present invention proposes a kind of alignment mark and preparation method thereof, this alignment mark adopts anisotropic etching fabrication techniques to be formed, and because the etch rate of anisotropic etching on the different crystal face of wafer is inconsistent, can etch specific crystal face on wafer.The V-type groove formed according to this feature, because two groove faces are all the crystal faces with particular crystal orientation, so its folded piston ring land line formed also must collimate and wafer crystal orientation.Therefore alignment mark of the present invention can avoid the bit errors that wafer production process is introduced, and improves degree of accuracy and the accuracy of follow-up alignment process.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. an alignment mark, being formed at one has in the wafer substrate of substrate orientation, it is characterized in that: described alignment mark comprises the first V-type groove and the second V-type groove, the piston ring land line of this first V-type groove and the second V-type groove is orthogonal, two the first groove faces of this first V-type groove described and two the second groove faces of described second V-type groove have the surface orientation of same family of crystal planes, and this surface orientation is different from described substrate orientation, wherein two folded piston ring land lines formed of the first groove face strictly collimate in Substrate orientation
Described alignment mark is in order to carry out contraposition to light shield and described wafer substrate in a lithographic process, formed with reference to body alignment mark after described alignment mark completes in described wafer substrate, and carry out coordinating with a body alignment mark be arranged on described light shield and realize described contraposition.
2. alignment mark as claimed in claim 1, is characterized in that: described substrate orientation is (100).
3. alignment mark as claimed in claim 2, is characterized in that: the surface orientation of described two the first groove faces and two the second groove faces is { 111} face.
4. alignment mark as claimed in claim 1, is characterized in that: the piston ring land line of described first V-type groove and the piston ring land line straight line intersection of the second V-type groove, forms cruciform.
5. alignment mark as claimed in claim 1, is characterized in that: the piston ring land line of the first V-type groove and the piston ring land line of the second V-type groove form dislocation and intersect.
6. a method for making for the alignment mark as described in claim 1 to 5 any one, is characterized in that: the method comprising the steps of:
The wafer substrate that one has a substrate orientation is provided, makes one deck mask layer over the substrate;
Described mask layer etches the surfacial pattern of alignment mark, and the region corresponding to the surfacial pattern of described alignment mark exposes substrate;
One anisotropic etching step is carried out to the substrate region that described mask layer comes out, according to the alignment mark surfacial pattern on mask layer, substrate obtains alignment mark.
7. method for making as claimed in claim 6, is characterized in that: the surfacial pattern of the alignment mark on described mask layer is hollow cruciform.
8. method for making as claimed in claim 6, is characterized in that: described anisotropic etching is wet-etching technology or reactive ion etching process.
9. method for making as claimed in claim 8, is characterized in that: the etching liquid in described wet-etching technology is potassium hydroxide solution or tetramethyl ammonium hydroxide solution.
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| CN201210190822.1A CN103488063B (en) | 2012-06-11 | 2012-06-11 | A kind of alignment mark and preparation method thereof |
| PCT/CN2013/077120 WO2013185605A1 (en) | 2012-06-11 | 2013-06-10 | Alignment mark and fabrication method thereof |
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| CN201210190822.1A CN103488063B (en) | 2012-06-11 | 2012-06-11 | A kind of alignment mark and preparation method thereof |
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| CN104596412A (en) * | 2014-12-11 | 2015-05-06 | 中国科学院等离子体物理研究所 | Identification base for complex curved surface high-precision measuring and positioning |
| CN105428292B (en) * | 2015-11-17 | 2018-08-03 | 中国科学技术大学 | A kind of alignment methods of grating mask and silicon chip { 111 } crystal face |
| CN107557731B (en) * | 2017-08-01 | 2020-02-07 | 武汉华星光电半导体显示技术有限公司 | Mask plate |
| CN111524836B (en) | 2019-02-13 | 2021-08-27 | 长江存储科技有限责任公司 | Marking for locating patterns in semiconductor manufacturing |
| CN112563246B (en) * | 2020-12-18 | 2022-06-24 | 河源市众拓光电科技有限公司 | Photoetching overlay mark and preparation method thereof |
| CN112947016B (en) * | 2021-01-26 | 2023-01-03 | 湖北光安伦芯片有限公司 | Method for improving alignment precision of different-machine photoetching mixed operation |
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| TW548818B (en) * | 2002-01-24 | 2003-08-21 | Taiwan Semiconductor Mfg | Method for forming alignment marks by V-groove etching |
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2012
- 2012-06-11 CN CN201210190822.1A patent/CN103488063B/en active Active
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2013
- 2013-06-10 WO PCT/CN2013/077120 patent/WO2013185605A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6533391B1 (en) * | 2000-10-24 | 2003-03-18 | Hewlett-Packard Development Company, Llp | Self-aligned modules for a page wide printhead |
| US6872630B1 (en) * | 2002-06-12 | 2005-03-29 | Taiwan Semiconductor Manufacturing Company | Using V-groove etching method to reduce alignment mark asymmetric damage in integrated circuit process |
| CN1603958A (en) * | 2003-09-30 | 2005-04-06 | 佳能株式会社 | Alignment mark forming method, substrate in which devices are formed, and liquid discharging head using substrate |
Also Published As
| Publication number | Publication date |
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| CN103488063A (en) | 2014-01-01 |
| WO2013185605A1 (en) | 2013-12-19 |
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