CN101312138B - Method for non-destructively detecting substrate surface appearance - Google Patents
Method for non-destructively detecting substrate surface appearance Download PDFInfo
- Publication number
- CN101312138B CN101312138B CN2007100410379A CN200710041037A CN101312138B CN 101312138 B CN101312138 B CN 101312138B CN 2007100410379 A CN2007100410379 A CN 2007100410379A CN 200710041037 A CN200710041037 A CN 200710041037A CN 101312138 B CN101312138 B CN 101312138B
- Authority
- CN
- China
- Prior art keywords
- thickness
- substrate surface
- photoresistance
- characteristic size
- surface appearance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Abstract
The invention provides a method for non-destructively detecting substrate surface shape. In the prior art, detection of the substrate surface shape can damage a substrate. The method comprises steps of providing a flat substrate, a preset range of thickness and a photo mask having specific patterns, respectively coating the flat substrate with photo resistances with different thickness which is selected from the preset range of thickness, photoetching the specific patterns by the photo mask, then measuring the characteristic dimensions of the specific patterns which are relative to the photo resistances with different thickness, plotting a graph of relation according to the measured characteristic dimensions and the thickness of relative photo resistances and storing the graph of relation in a database, and then coating a photo resistance with a selected thickness in the preset range of thickness on the substrate to be detected, using a photo mask having a plurality of the specific patterns to photoetch the specific patterns, finally, measuring the characteristic dimensions of the specific patterns and obtaining the substrate surface shape of the substrate to be measured according to data in the database. Therefore, the method can detect substrate non-destructively.
Description
Technical field
The present invention relates to the detection of substrate surface pattern, particularly a kind of method of non-destructively detecting substrate surface appearance.
Background technology
In field of semiconductor manufacture, when after making protrusion on the silicon substrate or being depressed in the structure of silicon substrate, whether the size that detects this structure when need is in control range the time, have only the position of need checks done under the instrument that is placed on similar ESEM (SEM) behind the section and test, just can record the surface topography of silicon chip substrate.The surface topography of destructive check substrate like this can cause great waste.
Summary of the invention
The object of the present invention is to provide a kind of method of non-destructively detecting substrate surface appearance, can not destroy the pattern that substrate just can detect substrate surface by described method.
The object of the present invention is achieved like this: a kind of method of non-destructively detecting substrate surface appearance, this substrate surface has bulge-structure and/or sunk structure, this method may further comprise the steps: (1) provides a flat substrate, a thickness preselected range and to have the light shield of special pattern, in this preselected range, choose different thickness and on this flat substrate, apply the photoresistance of selected thickness respectively, re-use this light shield and on this photoresistance, make this special pattern by lithography; (2) record the characteristic size of pairing this special pattern of photoresistance of this different-thickness; (3) draw out the graph of relation of photoresistance thickness and characteristic size according to the characteristic size that records and corresponding photoresistance thickness thereof, and this curve chart is stored in the database; (4) photoresistance of a selected thickness in the coating preliminary election thickness range on substrate to be measured re-uses a light shield with a plurality of these special patterns and make these a plurality of special patterns by lithography on this photoresistance; (5) record the characteristic size of these a plurality of special patterns; (6) draw the surface topography of this substrate to be measured according to stored curve chart in measured characteristic size and the database.
In the method for above-mentioned non-destructively detecting substrate surface appearance, in step (6), when the characteristic size that measures in the step (5) in less than database during the selected pairing characteristic size of thickness, the structure that this special pattern covers is a bulge-structure, when the characteristic size that measures in the step (5) in greater than database during the selected pairing characteristic size of thickness, the structure that this special pattern covers is a sunk structure.
In the method for above-mentioned non-destructively detecting substrate surface appearance, in step (6), the difference of the characteristic size pairing photoresistance thickness in database that measures in this selected thickness and the step (5) is the degree of depth of the height or the sunk structure of this bulge-structure.
In the method for above-mentioned non-destructively detecting substrate surface appearance, the height of this bulge-structure and the degree of depth of this sunk structure are all less than a preset value.
In the method for above-mentioned non-destructively detecting substrate surface appearance, this preset value is 100 dusts.
In the method for above-mentioned non-destructively detecting substrate surface appearance, this preliminary election thickness range is 3000 dust to 4000 dusts.
In the method for above-mentioned non-destructively detecting substrate surface appearance, in step (1), in this preliminary election thickness range, choose different thickness at interval with a thickness, this thickness is spaced apart 100 dusts
In the method for above-mentioned non-destructively detecting substrate surface appearance, this selected thickness is 3800 dusts.
In the method for above-mentioned non-destructively detecting substrate surface appearance, this special pattern is that the length of side is 0.18 micron a square.
With in the prior art substrate done section and under ESEM, detects and compare, the method of non-destructively detecting substrate surface appearance of the present invention is set up the database of different photoresistance thickness and the characteristic size of special pattern after photoetching on this photoresistance earlier, on substrate to be measured, apply the photoresistance of selected thickness then, and use light shield that photoresistance is carried out photoetching with a plurality of special patterns, draw the pattern of silicon chip surface afterwards according to characteristic size after the photoetching and the data in the database, so the pattern that substrate just can detect the surface of substrate can be do not destroyed, cost can be saved greatly in addition.
Description of drawings
The method of non-destructively detecting substrate surface appearance of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the flow chart of the method for non-destructively detecting substrate surface appearance of the present invention;
Fig. 2 is the photoresistance thickness among the step S13 and the graph of relation of characteristic size.
Embodiment
Below will the method for non-destructively detecting substrate surface appearance of the present invention be described in further detail.
The method of non-destructively detecting substrate surface appearance of the present invention is used to detect the surface topography that the surface has the substrate of bulge-structure and/or sunk structure, and the height of described bulge-structure and the degree of depth of sunk structure are all less than a preset value.In the present embodiment, described preset value is 100 dusts.
Referring to Fig. 1, the method for non-destructively detecting substrate surface appearance of the present invention is at first carried out step S10, provides a flat substrate, a thickness preselected range and to have the light shield of special pattern.In the present embodiment, described preliminary election thickness range is 3000 dust to 4000 dusts, and described special pattern is that a length of side is 0.18 micron a square.
Then continue step S11, in described preliminary election thickness range, choose different thickness at interval with a thickness, and on described flat substrate, apply the photoresistance of selected thickness respectively.In the present embodiment, described thickness is spaced apart 100 dusts, so apply the photoresistance of 3000 dusts, 3100 dusts, 3200 dusts, 3300 dusts, 3400 dusts, 3500 dusts, 3600 dusts, 3700 dusts, 3800 dusts, 3900 dusts, 4000 dust thickness respectively on flat substrate.
Then continue step S12, use described light shield on described photoresistance, to make described special pattern by lithography.
Then continue step S13, record the characteristic size of the pairing special pattern of photoresistance of described different-thickness.In the present embodiment, when photoresistance thickness is respectively 3000 dusts, 3100 dusts, 3200 dusts, 3300 dusts, 3400 dusts, 3500 dusts, 3600 dusts, 3700 dusts, 3800 dusts, 3900 dusts, 4000 dusts, records its pairing characteristic size and be respectively 0.150 micron, 0.130 micron, 0.120 micron, 0.140 micron, 0.160 micron, 0.142 micron, 0.126 micron, 0.145 micron, 0.180 micron, 0.150 micron and 0.140 micron.
Then continue step S14, characteristic size that foundation records and corresponding photoresistance thickness thereof are drawn out the graph of relation of photoresistance thickness and characteristic size, and described curve chart is stored in the database.
Referring to Fig. 2, shown the graph of relation of photoresistance thickness and characteristic size, as shown in the figure, described curve chart is near cosine curve.
Then continue step S15, the photoresistance of a selected thickness in the coating preliminary election thickness range on substrate to be measured.In the present embodiment, described selected thickness is 3800 dusts.
Then continue step S15, use a light shield with a plurality of described special patterns on described photoresistance, to make described a plurality of special pattern by lithography.
Then continue step S16, record the characteristic size of described a plurality of special patterns.In the present embodiment, be that example describes with the substrate center point, be 0.17 micron in this characteristic size that has recorded the described special pattern at substrate center point place.
Then continue step S17, draw the surface topography of described substrate to be measured according to stored curve chart in measured characteristic size and the database.In the present embodiment, the characteristic size (promptly 0.17 micron) of at first judging described substrate center place is less than the pairing characteristic size of described selected thickness stored in the database (i.e. 3800 dusts) (promptly 0.18 micron), so the structure of described substrate center is a projective structure, being 3770 dusts according to the pairing photoresistance thickness of 0.17 micron feature size in the curve chart then, is to be the bulge-structure of 30 dusts highly so can draw described substrate center.
It should be noted that, on the described substrate to be measured the pattern at the judgement of other regional surface topographies and substrate center place judge the same, so do not repeat them here.
In sum, the method of non-destructively detecting substrate surface appearance of the present invention is set up the database of different photoresistance thickness and the characteristic size of special pattern after photoetching on the described photoresistance earlier, on substrate to be measured, apply the photoresistance of selected thickness then, and use light shield that photoresistance is carried out photoetching with a plurality of special patterns, draw the pattern of silicon chip surface afterwards according to characteristic size after the photoetching and the data in the database, so the pattern that substrate just can detect the surface of substrate can be do not destroyed, cost can be saved greatly in addition.
Claims (9)
1. the method for a non-destructively detecting substrate surface appearance, this substrate surface has bulge-structure and/or sunk structure, it is characterized in that, this method may further comprise the steps: (1) provides a flat substrate, a thickness preselected range and to have the light shield of special pattern, in this preselected range, choose different thickness and on this flat substrate, apply the photoresistance of selected thickness respectively, re-use this light shield and on this photoresistance, make this special pattern by lithography; (2) record the characteristic size of pairing this special pattern of photoresistance of this different-thickness; (3) draw out the graph of relation of photoresistance thickness and characteristic size according to the characteristic size that records and corresponding photoresistance thickness thereof, and this curve chart is stored in the database; (4) photoresistance of a selected thickness in the coating preliminary election thickness range on substrate to be measured re-uses a light shield with a plurality of these special patterns and make these a plurality of special patterns by lithography on this photoresistance; (5) record the characteristic size of these a plurality of special patterns; (6) draw the surface topography of this substrate to be measured according to stored curve chart in measured characteristic size and the database, wherein, the height of this bulge-structure and the degree of depth of this sunk structure are all less than a preset value, and this preset value is 100 dusts.
2. the method for non-destructively detecting substrate surface appearance as claimed in claim 1, it is characterized in that, in step (6), when the characteristic size that measures in the step (5) in less than database during the selected pairing characteristic size of thickness, the structure that this special pattern covers is a bulge-structure, when the characteristic size that measures in the step (5) in greater than database during the selected pairing characteristic size of thickness, the structure that this special pattern covers is a sunk structure.
3. the method for non-destructively detecting substrate surface appearance as claimed in claim 1, it is characterized in that, in step (6), the difference of the characteristic size pairing photoresistance thickness in database that measures in this selected thickness and the step (5) is the degree of depth of height or this sunk structure of this bulge-structure.
4. the method for non-destructively detecting substrate surface appearance as claimed in claim 1 is characterized in that, this preset value is 100 dusts.
5. the method for non-destructively detecting substrate surface appearance as claimed in claim 1 is characterized in that, this preliminary election thickness range is 3000 dust to 4000 dusts.
6. the method for non-destructively detecting substrate surface appearance as claimed in claim 1 is characterized in that, in step (1), chooses different thickness at interval in this preliminary election thickness range with a thickness.
7. the method for non-destructively detecting substrate surface appearance as claimed in claim 6 is characterized in that, this thickness is spaced apart 100 dusts.
8. the method for non-destructively detecting substrate surface appearance as claimed in claim 1 is characterized in that, this selected thickness is 3800 dusts.
9. the method for non-destructively detecting substrate surface appearance as claimed in claim 1 is characterized in that, this special pattern is that the length of side is 0.18 micron a square.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100410379A CN101312138B (en) | 2007-05-22 | 2007-05-22 | Method for non-destructively detecting substrate surface appearance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100410379A CN101312138B (en) | 2007-05-22 | 2007-05-22 | Method for non-destructively detecting substrate surface appearance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101312138A CN101312138A (en) | 2008-11-26 |
| CN101312138B true CN101312138B (en) | 2010-06-16 |
Family
ID=40100696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100410379A Expired - Fee Related CN101312138B (en) | 2007-05-22 | 2007-05-22 | Method for non-destructively detecting substrate surface appearance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101312138B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136438B (en) * | 2010-01-21 | 2012-08-01 | 上海华虹Nec电子有限公司 | Method for quickly detecting segment difference height between stacked frames of chip |
| CN102339733B (en) * | 2010-07-16 | 2013-09-04 | 中芯国际集成电路制造(北京)有限公司 | Method for controlling critical size of graph on uneven silicon slice surface |
| CN102954903B (en) * | 2011-08-22 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | Preparation method of germanium-silicon film monitoring sheet, and monitoring method through adopting sheet |
| CN102508413B (en) * | 2011-10-25 | 2014-04-09 | 上海华力微电子有限公司 | Method for acquiring thickness change of photoresist and monitoring influence of photoresist thickness on graphic dimension |
| CN103363946B (en) * | 2012-03-30 | 2016-08-03 | 国家纳米科学中心 | A kind of method of non-damaged data surface topography |
| CN103135364A (en) * | 2013-02-21 | 2013-06-05 | 合肥京东方光电科技有限公司 | Photolithographic process parameter determination method and device |
| CN105097592B (en) * | 2015-06-17 | 2018-01-26 | 北京七星华创电子股份有限公司 | The silicon chip distribution optoelectronic scanning method and device of semiconductor equipment bearing area |
| CN108063100B (en) * | 2017-12-08 | 2021-04-27 | 绍兴奥美电子科技有限公司 | Test method of photoresist removal process |
| CN110767540B (en) * | 2019-10-31 | 2021-12-07 | 上海华力集成电路制造有限公司 | Photoetching process method |
| CN111142329A (en) * | 2019-12-16 | 2020-05-12 | 合肥元旭创芯半导体科技有限公司 | Nondestructive semiconductor material SEM monitoring method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270560A (en) * | 1989-05-26 | 1993-12-14 | Ann F. Koo | Method and apparatus for measuring workpiece surface topography |
| US5489774A (en) * | 1994-09-20 | 1996-02-06 | The Board Of Trustees Of The Leland Stanford University | Combined atomic force and near field scanning optical microscope with photosensitive cantilever |
| US20040091620A1 (en) * | 2002-11-08 | 2004-05-13 | Wisconsin Alumni Research Foundation | Surfaces with gradients in surface topography |
| US20050190348A1 (en) * | 2004-02-27 | 2005-09-01 | Hung-Chi Wang | Device and method for testing an exposure apparatus |
-
2007
- 2007-05-22 CN CN2007100410379A patent/CN101312138B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270560A (en) * | 1989-05-26 | 1993-12-14 | Ann F. Koo | Method and apparatus for measuring workpiece surface topography |
| US5489774A (en) * | 1994-09-20 | 1996-02-06 | The Board Of Trustees Of The Leland Stanford University | Combined atomic force and near field scanning optical microscope with photosensitive cantilever |
| US20040091620A1 (en) * | 2002-11-08 | 2004-05-13 | Wisconsin Alumni Research Foundation | Surfaces with gradients in surface topography |
| US20050190348A1 (en) * | 2004-02-27 | 2005-09-01 | Hung-Chi Wang | Device and method for testing an exposure apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101312138A (en) | 2008-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101312138B (en) | Method for non-destructively detecting substrate surface appearance | |
| Bencher et al. | Directed self-assembly defectivity assessment. Part II | |
| WO2003068889A8 (en) | Profile refinement for integrated circuit metrology | |
| EP1492153A3 (en) | Method and system for monitoring an etch process | |
| WO2006068918A3 (en) | A fault filter for seismic discontinuity data | |
| WO2008043250A8 (en) | Smart coating for damage detected information, inspecting device and damage inspecting method using said coating | |
| WO2000028080A3 (en) | Methods, software and apparati for identifying genomic regions harboring a gene associated with a detectable trait | |
| TWI481859B (en) | Inspection method | |
| CN102054724B (en) | Method and device for detecting wafer surface defects | |
| WO2008008157A3 (en) | Electron induced chemical etching for detecting defects | |
| WO2008106015A3 (en) | A method for quantifying defects in a transparent substrate | |
| FR2895498B1 (en) | METHOD FOR MEASURING THE PROFILE IN THREE DIMENSIONS OF A SOIL AND DEVICE FOR IMPLEMENTING SAID METHOD | |
| CN104363714A (en) | Manufacturing method and screen printing method of solder-masked and screen-printed nail bed and solder-masked and screen-printed nail bed | |
| US7916295B2 (en) | Alignment mark and method of getting position reference for wafer | |
| EP1189222A3 (en) | Method and apparatus to detect and manage servo sectors with defects on servo pattern area in hard disk drives | |
| EP1942498A3 (en) | Data recording evaluation method and optical disk recording and reproduction device | |
| CN100468681C (en) | Film stress detecting method | |
| ATE383737T1 (en) | METHOD FOR ASSEMBLING A CIRCUIT | |
| TW200512806A (en) | Method of forming alignment mark | |
| US20090226074A1 (en) | Surface area estimation of a coating defect | |
| WO2004090978A3 (en) | Overlay metrology mark | |
| WO2006049638A3 (en) | Precision surface measurement | |
| CN104111030B (en) | A kind of photomask off-centring measurement apparatus and measuring method thereof | |
| JP6522692B2 (en) | Manhole cover | |
| JP2004507879A (en) | Individual placement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100616 Termination date: 20190522 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |