CN102135514A - Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection - Google Patents
Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection Download PDFInfo
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- CN102135514A CN102135514A CN201110077293XA CN201110077293A CN102135514A CN 102135514 A CN102135514 A CN 102135514A CN 201110077293X A CN201110077293X A CN 201110077293XA CN 201110077293 A CN201110077293 A CN 201110077293A CN 102135514 A CN102135514 A CN 102135514A
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- 238000001514 detection method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 27
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 6
- 238000007084 catalytic combustion reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
The invention discloses a gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection. A silicon substrate is provided with a cantilever beam which takes a dielectric layer as a structural layer; the root of the cantilever beam is provided with a first piezoelectric unit and a second piezoelectric unit, wherein the first piezoelectric unit and the second piezoelectric unit are symmetrically arranged and have the same structure; the piezoelectric unit comprises a piezoelectric layer, an upper electrode and a lower electrode, wherein the upper electrode and the lower electrode are arranged above and below the piezoelectric layer; the lower electrode is arranged on the piezoelectric layer; the lower electrode is one part of a lower electrode metal layer and is provided with an isolated dielectric layer which covers the dielectric layer, the piezoelectric layer and the lower electrode metal layer; the upper electrode is arranged on the isolated dielectric layer on the upper part of the piezoelectric layer; the isolated dielectric layer of the cantilever beam is provided with a supermolecule compound film as a gas sensitive layer; and a lower electrode lead connected with a lower electrode and an upper electrode lead connected with the upper electrode are arranged close to the isolated dielectric layer out of the cantilever beam. In the gas sensor, the piezoelectric actuation cantilever beam resonance and a piezoelectric pickup vibration mode are adopted for detection to detect gas concentration. The sensor has the characteristics of stable performance, long service life, small volume and the like, is free from being positioned and is not impacted by the high density of gas.
Description
Technical field
The present invention relates to a kind of beam type sensor, especially a kind of ground environment and the beam type Piezoelectric Driving of colliery downhole detection gas (methane) concentration and firedamp sensor of piezoelectric detection of being applicable to.
Background technology
The sensor that detects gas density adopts catalytic combustion type inflammable gas firedamp sensor, also useful optical gas firedamp sensor mostly at present.Though these two kinds of sensors can both play the effect of perception information, but there is the problem of working temperature height, life-span and calibration cycle weak point, poor stability in catalytic combustion type inflammable gas firedamp sensor, under high concentration is impacted, easily poison, can not initiatively distinguish different inflammable gass.And the cost of optical gas sensor is higher, and power consumption is bigger.
Summary of the invention
Technical matters:The objective of the invention is to overcome the problem that exists in the prior art, a kind of simple in structure, long service life, stable work in work, safe and reliable, cost is low, power consumption is little, room temperature detects beam type Piezoelectric Driving and the firedamp sensor of piezoelectric detection are provided
Technical scheme:The firedamp sensor of beam type Piezoelectric Driving of the present invention and piezoelectric detection, this sensor is substrate with the silicon substrate, on silicon substrate, be provided with the cantilever beam structure of dielectric layer as structural sheet, the root of cantilever beam structure is provided with first piezoelectric unit and second piezoelectric unit side by side, piezoelectric unit comprises piezoelectric layer, be located at piezoelectric layer top electrode and bottom electrode up and down, bottom electrode is located on the dielectric layer, dielectric layer, be coated with the spacer medium layer on piezoelectric layer and the bottom electrode, top electrode is located on the spacer medium layer on piezoelectric layer top, the spacer medium layer of dielectric layer semi-girder one side is provided with the gas sensitive layer, the other top electrode lead-in wire that is provided with the bottom electrode lead-in wire that connects bottom electrode and the utmost point that Connects Power of the spacer medium layer at dielectric layer semi-girder rear portion.
Described gas sensitive layer is cave kind-A or cave kind-E super molecular compound; Described dielectric layer is monox or silicon nitride or monox and silicon nitride composite bed; The spacer medium layer is a monox.
Beneficial effect:The present invention discerns and catches by super molecular compound and discharge gas (methane) molecule and causes MEMS semi-girder resonance frequency to change, when gas (methane) concentration change, the resonance frequency variation that the methane of sensitive layer absorption or desorption changes and causes semi-girder, adopt a piezoelectric unit to realize the driving of semi-girder, the resonance frequency that another piezoelectric unit detects semi-girder changes, and has realized the detection and the frequency type output of gas density signal; Adopt piezoelectric driven MEMS semi-girder resonance and piezoelectricity pick-up mode to detect, use super molecular compound, realize the detection of gas (methane) concentration as gas (methane) sensitive membrane.This sensor has recognition function to methane, have the advantages that to avoid poisoning, can not being subjected to the impact of gas high concentration, have stable performance, long service life, low in energy consumption, the resolution advantages of higher, and export the digital frequency signal that is as the criterion, adopt that the MEMS structure can make the volume of sensor little, cost is low, job operation can with the CMOS process compatible; Can satisfy the requirement of setting up sensing net, Internet of Things.
Description of drawings
Fig. 1 is a main TV structure synoptic diagram of the present invention.
Fig. 2 is a plan structure synoptic diagram of the present invention.
Among the figure: silicon substrate-101, piezoelectric layer-104, gas sensitive layer-105, cantilever beam structure-107, dielectric layer-1021, spacer medium layer-1022, bottom electrode metal-1031, top electrode metal-1032, first piezoelectric unit-1061, second piezoelectric unit-1062, top electrode-1032, bottom electrode-1031, bottom electrode lead-in wire-10311, top electrode lead-in wire-10322.
Embodiment
Below in conjunction with accompanying drawing one embodiment of the present of invention are further described:
As shown in Figure 1, the firedamp sensor of beam type Piezoelectric Driving and piezoelectric detection mainly is made up of with gas sensitive layer 105 silicon substrate 101, dielectric layer 1021, spacer medium layer 1022, piezoelectric layer 104, bottom electrode metal 1031, top electrode metal 1032.Dielectric layer 1021 is monox or silicon nitride or monox and silicon nitride composite bed, and spacer medium layer 1022 is a silicon oxide layer.With silicon substrate 101 is substrate, is provided with on silicon substrate 101 with the cantilever beam structure 107 of dielectric layer 1021 as structural sheet, and cantilever beam structure 107 roots are provided with symmetric offset spread, first piezoelectric unit 1061 and second piezoelectric unit 1062 that structure is identical; First piezoelectric unit 1061 is used to drive semi-girder, and second piezoelectric unit 1062 is used to detect resonance frequency to be changed; Piezoelectric unit comprises piezoelectric layer 104, is located at top electrode 1032 and the bottom electrode 1031 of piezoelectric layer about in the of 104.Bottom electrode 1031 is located on the dielectric layer 1021, bottom electrode 1031 is parts of bottom electrode metal level, be provided with spacer medium layer 1022 blanket dielectric layer 1021, piezoelectric layer 104 and bottom electrode metal level, top electrode 1032 is located on the spacer medium layer 1022 on the piezoelectric layer 104, the spacer medium layer 1022 of semi-girder is provided with gas sensitive layer 105, and gas sensitive layer 105 is cave kind-A(cryptophane-A) or cave kind-E (cryptophane-E) super molecular compound.The spacer medium layer 1022 other top electrode lead-in wire 10322 that is provided with the bottom electrode lead-in wire 10311 that connects bottom electrode 1031 and the utmost point 1032 that Connects Power outside the semi-girder.Drive the vibration of beam of realization cantilever with a piezoelectric unit, the resonance frequency of using another piezoelectric unit to pick up the detection semi-girder changes, thereby the detection of realization gas (methane) concentration and accurate digital frequency are exported.
Claims (3)
1. the firedamp sensor of beam type Piezoelectric Driving and piezoelectric detection, it is characterized in that: this sensor is substrate with silicon substrate (101), on silicon substrate (101), be provided with the cantilever beam structure (107) of dielectric layer (1021) as structural sheet, the root of cantilever beam structure (107) is provided with first piezoelectric unit (1061) and second piezoelectric unit (1062) side by side, piezoelectric unit comprises piezoelectric layer (104), be located at piezoelectric layer (104) top electrode (1032) and bottom electrode (1031) up and down, bottom electrode (1031) is located on the dielectric layer (1021), dielectric layer (1021), be coated with spacer medium layer (1022) on piezoelectric layer (104) and the bottom electrode (1031), top electrode (1032) is located on the spacer medium layer (1022) on piezoelectric layer (104) top, the spacer medium layer (1022) of dielectric layer (1021) semi-girder one side is provided with gas sensitive layer (105), the other bottom electrode lead-in wire (10311) of connection bottom electrode (1031) and the top electrode lead-in wire (10322) of the utmost point that Connects Power (1032) of being provided with of the spacer medium layer (1022) at dielectric layer (1021) semi-girder rear portion.
2. the firedamp sensor of beam type Piezoelectric Driving according to claim 1 and piezoelectric detection is characterized in that gas sensitive layer (105) is cave kind-A or cave kind-E super molecular compound.
3. the firedamp sensor of beam type Piezoelectric Driving according to claim 1 and piezoelectric detection is characterized in that dielectric layer (1021) is monox or silicon nitride or monox and silicon nitride composite bed; Spacer medium layer (1022) is a monox.
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| CN 201110077293 CN102135514B (en) | 2011-03-30 | 2011-03-30 | Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection |
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| CN 201110077293 CN102135514B (en) | 2011-03-30 | 2011-03-30 | Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection |
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| CN102135514A true CN102135514A (en) | 2011-07-27 |
| CN102135514B CN102135514B (en) | 2013-08-21 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412805A (en) * | 2011-08-12 | 2012-04-11 | 应达利电子(深圳)有限公司 | Quarts crystal resonator, detector as well as detection method for benzene gas detection |
| CN103184886A (en) * | 2011-12-30 | 2013-07-03 | 国家纳米技术与工程研究院 | Measuring component of MEMS (Micro-electromechanical Systems) technology-based gas alarm and preparation method of measuring component |
| WO2016066003A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Silicon heater-based mems methane sensor, manufacturing method for same, and applications thereof |
| WO2016066089A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Methane sensor based on single heating component, manufacturing method, and applications |
| CN103184886B (en) * | 2011-12-30 | 2016-12-14 | 国家纳米技术与工程研究院 | A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof |
| CN107143376A (en) * | 2017-06-23 | 2017-09-08 | 安徽理工大学 | Wrist coal mine gas concentration overload alarm instrument based on piezoelectric micro-cantilever beam |
| CN108519409A (en) * | 2018-05-11 | 2018-09-11 | 合肥微纳传感技术有限公司 | A kind of single suspension beam type gas sensor, preparation method and the sensor array of warpage |
| WO2024087648A1 (en) * | 2022-10-25 | 2024-05-02 | 华为技术有限公司 | Piezoelectric accelerometer, piezoelectric sensor, and smart device |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412805A (en) * | 2011-08-12 | 2012-04-11 | 应达利电子(深圳)有限公司 | Quarts crystal resonator, detector as well as detection method for benzene gas detection |
| CN102412805B (en) * | 2011-08-12 | 2017-06-16 | 应达利电子股份有限公司 | A kind of quartz-crystal resonator, detector and detection method detected for benzene hydrocarbon gase |
| CN103184886A (en) * | 2011-12-30 | 2013-07-03 | 国家纳米技术与工程研究院 | Measuring component of MEMS (Micro-electromechanical Systems) technology-based gas alarm and preparation method of measuring component |
| CN103184886B (en) * | 2011-12-30 | 2016-12-14 | 国家纳米技术与工程研究院 | A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof |
| WO2016066003A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Silicon heater-based mems methane sensor, manufacturing method for same, and applications thereof |
| WO2016066089A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Methane sensor based on single heating component, manufacturing method, and applications |
| CN107143376A (en) * | 2017-06-23 | 2017-09-08 | 安徽理工大学 | Wrist coal mine gas concentration overload alarm instrument based on piezoelectric micro-cantilever beam |
| CN108519409A (en) * | 2018-05-11 | 2018-09-11 | 合肥微纳传感技术有限公司 | A kind of single suspension beam type gas sensor, preparation method and the sensor array of warpage |
| WO2024087648A1 (en) * | 2022-10-25 | 2024-05-02 | 华为技术有限公司 | Piezoelectric accelerometer, piezoelectric sensor, and smart device |
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| CN102135514B (en) | 2013-08-21 |
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Inventor after: Ma Hongyu Inventor after: Ding Enjie Inventor after: Zhao Duan Inventor after: Wang Wenjuan Inventor after: Cheng Tingting Inventor before: Ma Hongyu Inventor before: Ding Enjie Inventor before: Zhang Weidong |
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Address after: 221116 No. 1 University Road, copper mountain, Jiangsu, Xuzhou Patentee after: China University of Mining & Technology Address before: 221116 science and Technology Department, China University of Mining and Technology, Sanhuan South Road, Xuzhou, Jiangsu Patentee before: China University of Mining & Technology |
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