CN102135514B - Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection - Google Patents
Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection Download PDFInfo
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- CN102135514B CN102135514B CN 201110077293 CN201110077293A CN102135514B CN 102135514 B CN102135514 B CN 102135514B CN 201110077293 CN201110077293 CN 201110077293 CN 201110077293 A CN201110077293 A CN 201110077293A CN 102135514 B CN102135514 B CN 102135514B
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- 238000001514 detection method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 6
- 238000007084 catalytic combustion reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
The invention discloses a gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection. A silicon substrate is provided with a cantilever beam which takes a dielectric layer as a structural layer; the root of the cantilever beam is provided with a first piezoelectric unit and a second piezoelectric unit, wherein the first piezoelectric unit and the second piezoelectric unit are symmetrically arranged and have the same structure; the piezoelectric unit comprises a piezoelectric layer, an upper electrode and a lower electrode, wherein the upper electrode and the lower electrode are arranged above and below the piezoelectric layer; the lower electrode is arranged on the piezoelectric layer; the lower electrode is one part of a lower electrode metal layer and is provided with an isolated dielectric layer which covers the dielectric layer, the piezoelectric layer and the lower electrode metal layer; the upper electrode is arranged on the isolated dielectric layer on the upper part of the piezoelectric layer; the isolated dielectric layer of the cantilever beam is provided with a supermolecule compound film as a gas sensitive layer; and a lower electrode lead connected with a lower electrode and an upper electrode lead connected with the upper electrode are arranged close to the isolated dielectric layer out of the cantilever beam. In the gas sensor, the piezoelectric actuation cantilever beam resonance and a piezoelectric pickup vibration mode are adopted for detection to detect gas concentration. The sensor has the characteristics of stable performance, long service life, small volume and the like, is free from being positioned and is not impacted by the high density of gas.
Description
Technical field
The present invention relates to a kind of beam type sensor, especially a kind of ground environment and the beam type Piezoelectric Driving of colliery downhole detection gas (methane) concentration and firedamp sensor of piezoelectric detection of being applicable to.
Background technology
The sensor that detects gas density adopts catalytic combustion type inflammable gas firedamp sensor mostly at present, also useful optical gas firedamp sensor.Though these two kinds of sensors can both play the effect of perception information, but there is the problem of working temperature height, life-span and calibration cycle weak point, poor stability in catalytic combustion type inflammable gas firedamp sensor, under high concentration is impacted, easily poison, can not initiatively distinguish different inflammable gass.And the cost of optical gas sensor is higher, and power consumption is bigger.
Summary of the invention
Technical matters:The objective of the invention is to overcome the problem that exists in the prior art, a kind of simple in structure, long service life, stable work in work, safe and reliable, cost is low, power consumption is little, room temperature detects beam type Piezoelectric Driving and the firedamp sensor of piezoelectric detection are provided
Technical scheme:The firedamp sensor of beam type Piezoelectric Driving of the present invention and piezoelectric detection, this sensor is substrate with the silicon substrate, be provided with the cantilever beam structure of dielectric layer as structural sheet at silicon substrate, the root of cantilever beam structure is provided with first piezoelectric unit and second piezoelectric unit side by side, piezoelectric unit comprises piezoelectric layer, be located at piezoelectric layer top electrode and bottom electrode up and down, bottom electrode is located on the dielectric layer, dielectric layer, be coated with the spacer medium layer on piezoelectric layer and the bottom electrode, top electrode is located on the spacer medium layer on piezoelectric layer top, the spacer medium layer of dielectric layer semi-girder one side is provided with the gas sensitive layer, the other top electrode lead-in wire that is provided with the bottom electrode lead-in wire that connects bottom electrode and the utmost point that Connects Power of the spacer medium layer at dielectric layer semi-girder rear portion.
Described gas sensitive layer is cave kind-A or cave kind-E super molecular compound; Described dielectric layer is monox or silicon nitride or monox and silicon nitride composite bed; The spacer medium layer is monox.
Beneficial effect:The present invention identifies and catches by super molecular compound and discharge gas (methane) molecule and causes MEMS semi-girder resonance frequency to change, when gas (methane) concentration change, the resonance frequency variation that the methane of sensitive layer absorption or desorption changes and causes semi-girder, adopt a piezoelectric unit to realize the driving of semi-girder, the resonance frequency that another piezoelectric unit detects semi-girder changes, and has realized detection and the frequency type output of gas density signal; Adopt piezoelectric driven MEMS semi-girder resonance and piezoelectricity pick-up mode to detect, use super molecular compound as gas (methane) sensitive membrane, realize the detection of gas (methane) concentration.This sensor has recognition function to methane, have the advantages that to avoid poisoning, can not being subjected to the impact of gas high concentration, have stable performance, long service life, low in energy consumption, the resolution advantages of higher, and export the digital frequency signal that is as the criterion, adopt that the MEMS structure can make the volume of sensor little, cost is low, job operation can with the CMOS process compatible; Can satisfy the requirement of setting up sensing net, Internet of Things.
Description of drawings
Fig. 1 is main TV structure synoptic diagram of the present invention.
Fig. 2 is plan structure synoptic diagram of the present invention.
Among the figure: silicon substrate-101, piezoelectric layer-104, gas sensitive layer-105, cantilever beam structure-107, dielectric layer-1021, spacer medium layer-1022, bottom electrode metal-1031, top electrode metal-1032, first piezoelectric unit-1061, second piezoelectric unit-1062, top electrode-1032, bottom electrode-1031, bottom electrode lead-in wire-10311, top electrode lead-in wire-10322.
Embodiment
Below in conjunction with accompanying drawing one embodiment of the present of invention are further described:
As shown in Figure 1, the firedamp sensor of beam type Piezoelectric Driving and piezoelectric detection mainly is made up of with gas sensitive layer 105 silicon substrate 101, dielectric layer 1021, spacer medium layer 1022, piezoelectric layer 104, bottom electrode metal 1031, top electrode metal 1032.Dielectric layer 1021 is monox or silicon nitride or monox and silicon nitride composite bed, and spacer medium layer 1022 is silicon oxide layer.Be substrate with silicon substrate 101, arrange with the cantilever beam structure 107 of dielectric layer 1021 as structural sheet at silicon substrate 101 that cantilever beam structure 107 roots are provided with symmetric offset spread, first piezoelectric unit 1061 and second piezoelectric unit 1062 that structure is identical; First piezoelectric unit 1061 is used for driving semi-girder, and second piezoelectric unit 1062 changes for detection of resonance frequency; Piezoelectric unit comprises piezoelectric layer 104, is located at top electrode 1032 and the bottom electrode 1031 of piezoelectric layer about in the of 104.Bottom electrode 1031 is located on the dielectric layer 1021, bottom electrode 1031 is parts of bottom electrode metal level, be provided with spacer medium layer 1022 blanket dielectric layer 1021, piezoelectric layer 104 and bottom electrode metal level, top electrode 1032 is located on the spacer medium layer 1022 on the piezoelectric layer 104, the spacer medium layer 1022 of semi-girder is provided with gas sensitive layer 105, and gas sensitive layer 105 is cave kind-A(cryptophane-A) or cave kind-E (cryptophane-E) super molecular compound.The spacer medium layer 1022 other top electrode lead-in wire 10322 that is provided with the bottom electrode lead-in wire 10311 that connects bottom electrode 1031 and the utmost point 1032 that Connects Power outside the semi-girder.Drive the vibration of beam of realization cantilever with a piezoelectric unit, the resonance frequency of using another piezoelectric unit to pick up the detection semi-girder changes, thereby the detection of realization gas (methane) concentration and accurate digital frequency are exported.
Claims (1)
1. the firedamp sensor of a beam type Piezoelectric Driving and piezoelectric detection, it is characterized in that: this sensor is substrate with silicon substrate (101), be provided with the cantilever beam structure (107) of dielectric layer (1021) as structural sheet at silicon substrate (101), the root of cantilever beam structure (107) is provided with first piezoelectric unit (1061) and second piezoelectric unit (1062) side by side, first, second piezoelectric unit comprises piezoelectric layer (104), be located at the top electrode (1032) on the piezoelectric layer (104) and be located at bottom electrode (1031) under the piezoelectric layer (104), bottom electrode (1031) is located on the dielectric layer (1021), dielectric layer (1021), be coated with spacer medium layer (1022) on piezoelectric layer (104) and the bottom electrode (1031), top electrode (1032) is located on the spacer medium layer (1022) on piezoelectric layer (104) top, the spacer medium layer (1022) of dielectric layer (1021) semi-girder one side is provided with gas sensitive layer (105), the other bottom electrode lead-in wire (10311) of connection bottom electrode (1031) and the top electrode lead-in wire (10322) of the utmost point that Connects Power (1032) of being provided with of the spacer medium layer (1022) at dielectric layer (1021) semi-girder rear portion; Described gas sensitive layer (105) is cave kind-A or cave kind-E super molecular compound; Described dielectric layer (1021) is monox or silicon nitride or monox and silicon nitride composite bed; Spacer medium layer (1022) is monox; Drive the vibration that realizes cantilever beam structure (107) by a piezoelectric unit, the resonance frequency of using another piezoelectric unit to pick up detection semi-girder (107) changes, thereby realizes the detection of gas density and accurate digital frequency output.
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| CN 201110077293 CN102135514B (en) | 2011-03-30 | 2011-03-30 | Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection |
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| CN 201110077293 CN102135514B (en) | 2011-03-30 | 2011-03-30 | Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection |
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| CN102135514A CN102135514A (en) | 2011-07-27 |
| CN102135514B true CN102135514B (en) | 2013-08-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102412805B (en) * | 2011-08-12 | 2017-06-16 | 应达利电子股份有限公司 | A kind of quartz-crystal resonator, detector and detection method detected for benzene hydrocarbon gase |
| CN104316574B (en) * | 2014-10-31 | 2017-06-16 | 中国矿业大学 | A kind of methane transducer and preparation method and application based on single heating element heater |
| CN104316576B (en) * | 2014-10-31 | 2017-05-31 | 中国矿业大学 | MEMS methane transducers based on silicon heater and preparation method and application |
| CN107143376A (en) * | 2017-06-23 | 2017-09-08 | 安徽理工大学 | Wrist coal mine gas concentration overload alarm instrument based on piezoelectric micro-cantilever beam |
| CN108519409B (en) * | 2018-05-11 | 2024-05-07 | 微纳感知(合肥)技术有限公司 | Warp single cantilever type gas sensor, preparation method and sensor array |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10333972A1 (en) * | 2003-07-25 | 2005-02-10 | Robert Bosch Gmbh | Sensor, for selective detection of biochemical molecules, comprises a cantilever of the layers formed by gas phase etching to shape a hollow at the under side of the substrate |
| CN1719240A (en) * | 2005-08-05 | 2006-01-11 | 黑龙江大学 | Micro cantilever resonant type zinc phthalocynate film gas sensor and its preparation method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10333972A1 (en) * | 2003-07-25 | 2005-02-10 | Robert Bosch Gmbh | Sensor, for selective detection of biochemical molecules, comprises a cantilever of the layers formed by gas phase etching to shape a hollow at the under side of the substrate |
| CN1719240A (en) * | 2005-08-05 | 2006-01-11 | 黑龙江大学 | Micro cantilever resonant type zinc phthalocynate film gas sensor and its preparation method |
Non-Patent Citations (4)
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| 周嘉，等.压电谐振式微悬臂梁气体传感器.《压电与声光》.2003,第25卷(第5期), * |
| 孙东昌.压电智能梁振动控制中致动片优化布置与实验.《中国空间科学技术》.1999,(第6期), * |
| 李美双，李关民.基于微悬臂梁的谐振式气体传感器.《辽宁大学学报（自然科学版）》.2009,第36卷(第3期), * |
| 王锡明,等.具有激振和测振的新型压电微悬臂梁设计.《复旦学报(自然科学版)》.2010,第49卷(第6期), * |
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Inventor after: Ma Hongyu Inventor after: Ding Enjie Inventor after: Zhao Duan Inventor after: Wang Wenjuan Inventor after: Cheng Tingting Inventor before: Ma Hongyu Inventor before: Ding Enjie Inventor before: Zhang Weidong |
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Address after: 221116 No. 1 University Road, copper mountain, Jiangsu, Xuzhou Patentee after: China University of Mining & Technology Address before: 221116 science and Technology Department, China University of Mining and Technology, Sanhuan South Road, Xuzhou, Jiangsu Patentee before: China University of Mining & Technology |
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