CN108519409B - Warp single cantilever type gas sensor, preparation method and sensor array - Google Patents
Warp single cantilever type gas sensor, preparation method and sensor array Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000001514 detection method Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 238000011068 loading method Methods 0.000 claims abstract description 9
- 238000000926 separation method Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 10
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000007598 dipping method Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000012466 permeate Substances 0.000 claims 2
- 230000006872 improvement Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000000725 suspension Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
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- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
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Abstract
The invention discloses a warped single cantilever type gas sensor which comprises a silicon substrate, a supporting film, a heating resistor, a separation film and a detection electrode which are sequentially stacked, wherein the gas sensor comprises a base structure and a warped cantilever structure, and a gas sensitive material is arranged on the end part of the cantilever structure. The invention also provides a sensor array composed of a warped single cantilever type gas sensor, and a preparation method of the gas sensor, which comprises (1) selecting a sacrificial layer; (2) preparing a support film; (3) preparing a heating resistor; (4) preparing a separation film; (5) preparing a detection electrode; (6) releasing the film; (7) gas sensitive material loading. The sensor has the advantages of low power consumption, small size, high integration level, simple production process, easy positioning and effective improvement of production efficiency.
Description
Technical Field
The invention belongs to the technical field of micro-electromechanical systems and gas detection, and particularly relates to a warped single cantilever type gas sensor, a preparation method and a sensor array.
Background
The gas sensor based on the micro-electro-mechanical system (MEMS) technology gradually shows huge application potential due to the characteristics of small size, low power consumption, high sensitivity, quick response and the like, and is expected to replace the gas sensor based on the traditional technology and be widely applied to the fields of the Internet of things, mobile terminals, artificial intelligence and the like. Among MEMS gas sensors, sensors using Metal Oxide Semiconductor (MOS) materials have a wide detection range, and thus have a wider market space in future large-scale applications.
In the current MEMS MOS gas sensor, mainly based on the research of a suspension film type micro heater, the sensor with the structure has lower power consumption, generally can be as low as 20 milliwatts, and the utility model patent with the patent number 201520759054.6 provides a resistance type gas sensor with a four-layer structure of four support suspension beams, which is provided with a silicon substrate frame, a heating film layer, a heating electrode layer and a sensitive film layer which are sequentially arranged from bottom to top, wherein the heating film layer comprises a heating film region, and the heating film region is connected with the silicon substrate frame through four suspension beams. Another patent, for example, patent number CN201520759055.0, provides a resistive gas sensor with a four-layer structure of two support cantilever beams, which also includes a silicon substrate frame, a heating film layer, a heating electrode layer and a sensitive film layer, which are sequentially disposed from bottom to top, where the heating film layer includes a heating film region, and the heating film region is connected with the silicon substrate frame through two cantilever beams. Although the power consumption of the multi-cantilever type gas sensor is low, the multi-cantilever type gas sensor cannot meet the requirements along with the high-speed development of mobile terminals and application of the internet of things. Meanwhile, when the multi-cantilever type gas sensor is prepared, the problems of complex process, difficult positioning and low efficiency exist.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: how to further reduce the power consumption of the cantilever type gas sensor.
The invention adopts the following technical scheme to solve the technical problems:
A warped single cantilever type gas sensor has a base structure and a warped cantilever structure, which comprises a plurality of cantilever structures laminated from bottom to top
A silicon substrate;
The support film is a silicon nitride film and comprises a first base and a first cantilever, wherein the first cantilever is connected with one side of the first base and is warped upwards;
the heating resistor comprises a second base and a second cantilever, wherein the second cantilever is connected with one side of the second base and is warped upwards; a first window is formed in one side, opposite to the second cantilever, of the second base, a second window extending along the length direction of the second cantilever is formed in the second cantilever, and the second window is communicated with the first window; the second base is provided with first leads at the positions of the two sides of the second window respectively;
The isolation film is a silicon nitride film and comprises a third base and a third cantilever, wherein the third cantilever is connected with one side of the third base and is warped upwards; a transmission hole is formed in the third base part at a position corresponding to the first lead, and the first lead passes through the corresponding transmission hole and is exposed outside; the thickness of the isolating film is larger than that of the heating resistor;
the detection electrode comprises a fourth base and a fourth cantilever, wherein the fourth cantilever is connected with one side of the fourth base and is warped upwards; a third window is arranged on one side of the fourth base part, which is away from the fourth cantilever, a fourth window which extends along the length direction of the fourth cantilever and divides the fourth cantilever is arranged on the fourth cantilever, the fourth window is communicated with the third window, and the detection electrode is divided into two parts; the detection electrode does not cover the permeation hole; the detection electrode is provided with a second lead at the positions of the two sides of the third window;
The silicon substrate, the first base, the second base, the third base and the fourth base are correspondingly arranged to form the matrix structure; the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are correspondingly arranged to form the cantilever beam structure;
and one end of the fourth cantilever far away from the matrix structure is provided with a gas-sensitive material.
Preferably, in the warped single cantilever type gas sensor according to the present invention, the horizontal projections of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are rectangular.
Preferably, in the warped single cantilever type gas sensor according to the present invention, horizontal projections of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are isosceles trapezoids, and widths of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are gradually increased along a direction away from the substrate structure.
Preferably, in the warped single cantilever type gas sensor according to the present invention, the first cantilever is provided with a first hole extending along a length direction of the first cantilever.
Preferably, in the warped single cantilever type gas sensor according to the present invention, the third cantilever is provided with a second hole extending along the length direction of the third cantilever, and the second hole is disposed corresponding to the first hole.
Preferably, in the warped single cantilever type gas sensor according to the present invention, the fourth base is located at a side of the penetration hole away from the third cantilever, and the fourth cantilever is located between the two penetration holes; or the fourth base is positioned on one side of the penetration hole close to the third cantilever.
Preferably, the thickness of the support film, the heating resistor, the isolating film and the detecting electrode of the warped single cantilever type gas sensor of the invention is
The invention provides a preparation method of a sensor, which is used for preparing the warped single cantilever type gas sensor and comprises the following steps of:
(1) Selecting a sacrificial layer: when a single-throw or double-throw silicon wafer is used as a substrate, a silicon oxide layer is formed on the substrate by a thermal oxidation method to serve as a sacrificial layer; when the SOI silicon chip is used as a substrate, the top silicon layer is used as a sacrificial layer;
(2) And (3) manufacturing a support film: preparing a silicon nitride layer on the sacrificial layer by adopting a low-pressure chemical vapor deposition method;
(3) And (3) manufacturing a heating resistor: the preparation method comprises the steps of adopting a stripping process;
(4) Manufacturing a separation film: preparing a silicon nitride layer by adopting a plasma enhanced chemical vapor deposition method, and etching the isolation film by utilizing reactive ion etching or ion beam etching to form a through hole to expose the heating resistor;
(5) Manufacturing a detection electrode: the preparation method comprises the steps of adopting a stripping process;
(6) Release film: the supporting film is thoroughly etched and exposed by utilizing reactive ion etching or ion beam etching to expose the silicon substrate to form a film release window, and then the sacrificial layer is etched by utilizing a wet etching process to warp the cantilever structure;
(7) Loading of gas-sensitive material: and dipping the end part of the cantilever structure with a gas-sensitive material, and sintering to finish the loading of the gas-sensitive material.
Preferably, in the method for manufacturing a sensor according to the present invention, in the step (1), when single polishing or double polishing is used as the substrate, the thickness of the sacrificial layer isWhen an SOI silicon wafer is used as the substrate, the thickness of the top silicon layer as the sacrificial layer is 2um.
The invention also provides a sensor array which is composed of a plurality of the warped single cantilever type gas sensors.
The invention has the technical advantages that:
the technical scheme of the invention adopts a warped single cantilever beam structure, an effective area is arranged at the end part of the cantilever beam, and the power consumption of the sensor is reduced to 1 milliwatt by reducing the area of the effective area and the number of the cantilever beams;
The size of the warped single-cantilever sensor is smaller, the integration level is higher, and the integration level is improved by an order of magnitude compared with the existing multi-cantilever structure;
The preparation method of the warped single cantilever type gas sensor provided by the invention has the advantages of simple process, easiness in positioning, effective improvement of production efficiency and easiness in preparing the gas sensitive material with the composite structure of the gas material.
Drawings
FIG. 1 is a schematic view of a warped single cantilever type gas sensor according to an embodiment of the present invention;
FIG. 2 is an exploded view of FIG. 1;
FIG. 3 is an exploded view of another single cantilever gas sensor according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a sensor array according to an embodiment of the present invention.
Detailed Description
In order to facilitate the understanding of the technical scheme of the present invention by those skilled in the art, the technical scheme of the present invention will be further described with reference to the accompanying drawings.
Referring to fig. 1 and 2, the present embodiment provides a warped single cantilever type gas sensor, which comprises a silicon substrate 1, a support film 2, a heating resistor 3, a separation film 4, a detection electrode 5 and a gas sensitive material 6.
The sensor has a base structure and a warped cantilever structure, the base structure is generally rectangular, and the cantilever structure is arranged in the middle of one long side of the base structure, so that the horizontal projection of the sensor is in a T shape. The silicon substrate 1, the support film 2, the heating resistor 3, the isolation film 4 and the detection electrode 5 are sequentially stacked, and the specific structure is as follows:
The upper end face and the lower end face of the silicon substrate 1 are rectangular;
The support film 2 is used for supporting the whole cantilever structure, and is a silicon nitride layer. Including a first base 21 and a first cantilever 22. The first base 21 is rectangular, the first cantilever 22 is connected with the middle part of one long side of the first base 21, and the first cantilever 22 is warped upwards;
The heating resistor 3 is made of a metallic material, typically platinum, which is used to provide the required operating temperature for the sensor operation. The heating resistor 3 comprises a second base 31 and a second cantilever 32, wherein the second base 31 is rectangular, the second cantilever 32 is positioned in the middle of one long side of the second base 31, and the second cantilever 32 is warped upwards; a first window 33 is formed on one side of the second base 31 opposite to the second cantilever 32, a second window 34 extending along the length direction of the second cantilever 32 is formed on the second cantilever 32, and the second window 34 is communicated with the first window 33; the second base portion 31 is provided with first leads (not shown) at positions on both sides of the second window 34, respectively;
The isolation film 4 is a silicon nitride film, and is provided for electrically isolating the heating resistor 3 and the detection electrode 5. The isolation diaphragm 4 includes a third base 41 and a third cantilever 42, the third cantilever 41 being provided in the middle of one long side of the third base 41, and the third cantilever 42 being warped upward; a through hole 43 is formed in the third base 41 at a position corresponding to the first lead, and the first lead passes through the corresponding through hole 43 and is exposed; the thickness of the isolating film 4 is larger than that of the heating resistor 3;
The detection electrode 5 is typically a noble metal electrode, such as platinum or gold. The detection electrode 5 includes a fourth base 51 and a fourth cantilever 52, the fourth cantilever 52 being provided in the middle of one long side of the fourth base 51, and the fourth cantilever 52 being warped upward; a third window 53 is arranged on one side of the fourth base 51 opposite to the fourth cantilever 52, a fourth window 54 extending along the length direction of the fourth cantilever 52 and dividing the fourth cantilever 52 is arranged on the fourth cantilever 52, and the fourth window 54 is communicated with the third window 53 and divides the detection electrode 5 into two parts; the detection electrode 5 does not cover the transmission hole 43; second leads (not shown) are arranged on the positions of the detection electrodes 5 on two sides of the third window 53;
The silicon substrate 1, the first base 21, the second base 31, the third base 41 and the fourth base 51 are correspondingly arranged to form the matrix structure; the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 are correspondingly arranged to form the cantilever structure;
The gas sensitive material 6 is composed of a metal oxide semiconductor material at the nano-scale, such as tin dioxide, zinc oxide or other oxides, etc. And is disposed on an end of the fourth cantilever 52 remote from the base structure, so that the gas sensitive material is electrically connected with the detection electrode 5. When the gas sensitive material 6 adsorbs specific gas molecules, the resistance of the gas sensitive material changes, so that the purpose of detecting gas is achieved.
The core part of the gas sensor is a warped cantilever beam structure, and the effective area for adding the gas sensitive material is only at the end part of the cantilever beam structure far away from the matrix mechanism. On the one hand, the heat loss caused by heat convection and heat radiation is reduced by reducing the area of the effective area, on the other hand, the cantilever beam structure is thin and long, and the cantilever beam is warped upwards, so that the contact with the silicon substrate 1 is avoided, the heat loss in the heat conduction process can be greatly reduced, and the sensor has extremely low power consumption.
In the present embodiment, the base structure is rectangular, and the cantilever structure is disposed at the middle of the long side of the rectangular base structure, but this is not strictly defined, and in the actual production process, the specific shape of the base structure and the disposition position of the cantilever structure are set as required.
In one configuration of the sensor, as shown in FIG. 2, the horizontal projections of the first 22, second 32, third 42, and fourth 52 cantilevers are all rectangular.
In another structure of the sensor, as shown in fig. 3, the horizontal projections of the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 are isosceles trapezoids, and the widths of the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 gradually increase along the direction away from the base structure. By widening the connection width of the cantilever structure and the matrix structure, the mechanical strength of the whole sensor is improved while the low power consumption characteristic of the warped single cantilever structure is maintained.
The first cantilever 22 is provided with a first hole 23 extending in the longitudinal direction of the first cantilever 22. The third cantilever 42 is provided with a second hole 44 extending along the length direction of the third cantilever 42, and the second hole 44 is arranged corresponding to the first hole 23. The heat loss during heat conduction is further reduced by providing elongated first and second holes 23, 44.
More specifically, the fourth base portion 51 is located on a side of the penetration hole 43 facing away from the third cantilever 42, and the fourth cantilever 52 is located between the two penetration holes 43. Or the fourth base 51 is located on the side of the penetration hole 43 near the third cantilever 42.
In addition, the thicknesses of the support film 2, the heating resistor 3, the isolating film 4 and the detection electrode 5 are all
The first window 33 may be a symmetrical structure in this embodiment, and the heating resistor 3 is formed into a symmetrical structure by providing the first window 33 and the second window 34; the third window 53 has a symmetrical structure, and the detection electrode 5 is divided into two symmetrical parts by the third window 53 and the fourth window 54. In actual production, the first window 33 and the third window 53 may be asymmetric, if necessary, and the heating resistor 3 and the detection electrode 5 may be asymmetric.
In the smell recognition application, a plurality of sensors are often required to be integrated together to work, and the warped single cantilever type sensor provided by the embodiment is very easy to integrate a plurality of sensors to form a sensor array due to the uniqueness of the structure. As shown in fig. 4, the present embodiment further provides a sensor array, which is tiled by the above-mentioned warped single cantilever sensor, wherein the cantilever structures of the respective sensors are located on the same side of the base structure. Of course, the cantilever structures of the sensors may be distributed on two sides of the base structure or in other arrangements, as desired.
Compared with the traditional preparation method of the multi-cantilever type sensor, the preparation method of the single-cantilever type gas sensor has the characteristics of easiness in positioning and simplicity in process. The following is a detailed description of specific preparation examples.
Example 1
(1) Taking an N-type single-polished (100) surface single-polished silicon wafer as a substrate, and manufacturing a layer with the thickness ofAs a sacrificial layer;
(2) Growing a layer of thickness on the sacrificial layer by adopting a low-pressure chemical vapor deposition method As the support layer 2;
(3) Manufacturing a heating resistor 3: heating resistance wire of platinum resistor manufactured by stripping process and having thickness of
(4) Manufacturing a separation film 4: preparing a silicon nitride layer by adopting a plasma enhanced chemical vapor deposition method, wherein the thickness of the silicon nitride layer is equal to that of the silicon nitride layerThen etching the isolation film by utilizing reactive ion etching or ion beam etching to form a through hole to expose the heating resistor;
(5) Manufacturing a detection electrode 5: gold electrode is prepared by adopting stripping process and has the thickness of
(6) Release film: the method comprises the steps of firstly, thoroughly etching and exposing a supporting film by utilizing reactive ion etching or ion beam etching to expose a silicon substrate to form a film release window, then, etching a sacrificial layer by utilizing a wet etching process, and after release, upwards warping the free end of a cantilever structure due to the tensile stress of a silicon nitride layer;
(7) Loading of the gas sensitive material 6: and (3) dipping tin dioxide colloid at the end part of the cantilever structure, sintering at 600 ℃ for 2 hours to finish loading of the gas sensitive material 6, thus obtaining the warped single cantilever type gas sensor, and then obtaining the single cantilever type gas sensor at the corresponding positions of the first lead and the second lead.
It should be noted that, the silicon substrate 1 in this embodiment may also be a double polished silicon wafer, and the crystal orientation thereof is not strictly required; the thickness of the support film 2, the heating resistor 3, the isolating film 4 and the detection electrode 5 is as requiredAt/>Is adjusted within the range of (2).
Example two
(1) Taking an SOI silicon wafer as a substrate, wherein the top silicon layer is taken as a sacrificial layer, and the thickness of the top silicon layer is 2um;
(2) Growing a layer of thickness on the sacrificial layer by adopting a low-pressure chemical vapor deposition method Is used as a supporting film;
(3) Manufacturing a heating resistor 3: the heating resistor is manufactured by adopting a stripping process and has the thickness of
(4) Manufacturing a separation film 4: the silicon nitride layer is prepared by utilizing plasma enhanced vapor deposition, and the thickness of the silicon nitride layer is Then, the isolation film 4 is etched by reactive ion etching or ion beam etching to form a penetration hole 43 to expose the heating resistor;
(5) Manufacturing a detection electrode 5: platinum electrode is manufactured by stripping process and has the thickness of
(6) The method comprises the steps of firstly, thoroughly etching and exposing a supporting film by utilizing reactive ion etching or ion beam etching to expose top silicon of an SOI substrate to form a film release window, then etching a sacrificial layer by utilizing a wet etching process, and after release, warping the free end of a cantilever structure upwards under the action of tensile stress of a silicon nitride layer;
(7) Loading of the gas sensitive material 6: and (3) dipping the end part of the cantilever structure into an oxide gas sensitive material colloid, sintering at 600 ℃ for 2 hours to finish loading of the gas sensitive material 6, thus obtaining the warped single cantilever type gas sensor, and then obtaining the first lead and the second lead at the corresponding positions.
In the present embodiment, the thicknesses of the support film 2, the heating resistor 3, the isolation film 4 and the detection electrode 5 are as requiredAt/>Is adjusted within the range of (2).
The method for preparing the sensor into the sensor array is basically the same as the preparation process of the single cantilever beam gas sensor, and only needs to set etching conditions in the step (6) to enable a plurality of matrix structures to be connected in sequence after the film is released, wherein each matrix structure is provided with a sensor array with a warped cantilever beam structure; and then tin dioxide gas-sensitive materials with the same or different formulas are respectively dipped at the end part of each cantilever structure according to the requirement to form a warped single-cantilever gas sensor array.
The technical scheme of the invention is described above by way of example with reference to the accompanying drawings, and it is apparent that the specific implementation of the invention is not limited by the above manner, and it is within the scope of the invention if various insubstantial improvements of the method concept and technical scheme of the invention are adopted or the inventive concept and technical scheme are directly applied to other occasions without improvement.
Claims (10)
1. A warped single-cantilever type gas sensor is characterized in that the horizontal projection of the single-cantilever type gas sensor is T-shaped, and the single-cantilever type gas sensor has a matrix structure and a warped cantilever structure, and comprises the following parts which are sequentially stacked from bottom to top
A silicon substrate;
The support film is a silicon nitride film and comprises a first base and a first cantilever, wherein the first cantilever is connected with one side of the first base and is warped upwards;
the heating resistor comprises a second base and a second cantilever, wherein the second cantilever is connected with one side of the second base and is warped upwards; a first window is formed in one side, opposite to the second cantilever, of the second base, a second window extending along the length direction of the second cantilever is formed in the second cantilever, and the second window is communicated with the first window; the second base is provided with first leads at the positions of the two sides of the second window respectively;
The isolation film is a silicon nitride film and comprises a third base and a third cantilever, wherein the third cantilever is connected with one side of the third base and is warped upwards; a transmission hole is formed in the third base part at a position corresponding to the first lead, and the first lead passes through the corresponding transmission hole and is exposed outside; the thickness of the isolating film is larger than that of the heating resistor;
the detection electrode comprises a fourth base and a fourth cantilever, wherein the fourth cantilever is connected with one side of the fourth base and is warped upwards; a third window is arranged on one side of the fourth base part, which is away from the fourth cantilever, a fourth window which extends along the length direction of the fourth cantilever and divides the fourth cantilever is arranged on the fourth cantilever, the fourth window is communicated with the third window, and the detection electrode is divided into two parts; the detection electrode does not cover the permeation hole; the detection electrode is provided with a second lead at the positions of the two sides of the third window;
The silicon substrate, the first base, the second base, the third base and the fourth base are correspondingly arranged to form the matrix structure; the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are correspondingly arranged to form the cantilever beam structure;
the cantilever structure is slender, and one end of the fourth cantilever far away from the matrix structure is provided with a gas-sensitive material.
2. The warped single cantilever gas sensor of claim 1, wherein the horizontal projections of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are all rectangular.
3. The warped single cantilever gas sensor of claim 1, wherein the horizontal projections of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are all isosceles trapezoids and the widths of the first cantilever, the second cantilever, the third cantilever and the fourth cantilever increase gradually in a direction away from the base structure.
4. A warped single cantilever gas sensor according to any of claims 1-3, wherein the first cantilever is provided with a first hole extending along the length of the first cantilever.
5. The warped single cantilever gas sensor according to claim 4, wherein the third cantilever is provided with a second hole extending in the length direction of the third cantilever, and the second hole is disposed corresponding to the first hole.
6. The warped single cantilever gas sensor of claim 1, wherein the fourth base is located on a side of the permeate aperture facing away from the third cantilever and the fourth cantilever is located between the two permeate apertures; or the fourth base is positioned on one side of the penetration hole close to the third cantilever.
7. The warped single cantilever gas sensor according to claim 1, wherein the thicknesses of the support film, the heating resistor, the isolation film and the detection electrode are all
8. A method of manufacturing a sensor for manufacturing a warped single cantilever-type gas sensor according to any one of claims 1-7, comprising the steps of:
(1) Selecting a sacrificial layer: when a single-throw or double-throw silicon wafer is used as a substrate, a silicon oxide layer is formed on the substrate by a thermal oxidation method to serve as a sacrificial layer; when the SOI silicon chip is used as a substrate, the top silicon layer is used as a sacrificial layer;
(2) And (3) manufacturing a support film: preparing a silicon nitride layer on the sacrificial layer by adopting a low-pressure chemical vapor deposition method;
(3) And (3) manufacturing a heating resistor: the preparation method comprises the steps of adopting a stripping process;
(4) Manufacturing a separation film: preparing a silicon nitride layer by adopting a plasma enhanced chemical vapor deposition method, and then etching the isolation film by utilizing reactive ion etching or ion beam to form a transparent hole to expose the heating resistor;
(5) Manufacturing a detection electrode: the preparation method comprises the steps of adopting a stripping process;
(6) Release film: the supporting film is thoroughly etched and exposed by utilizing reactive ion etching or ion beam etching to expose the silicon substrate to form a film release window, and then the sacrificial layer is etched by utilizing a wet etching process to warp the cantilever structure;
(7) Loading of gas-sensitive material: and dipping the end part of the cantilever structure with a gas-sensitive material, and sintering to finish the loading of the gas-sensitive material.
9. The method of manufacturing a sensor according to claim 8, wherein in the step (1), when single polishing or double polishing is used as the substrate, the thickness of the sacrificial layer isWhen an SOI silicon wafer is used as the substrate, the thickness of the top silicon layer as the sacrificial layer is 2um.
10. A sensor array comprising a plurality of single cantilever-type gas sensors as defined in any one of claims 1 to 7.
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