JP2005274175A - Capacitance type pressure sensor and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method capable of manufacturing a capacitance type pressure sensor having an excellent temperature characteristic and diaphragms with various thicknesses, by a simple process with an excellent yield, and a servo type sensor free from an error caused by vibration, and having an excellent dynamic characteristic. <P>SOLUTION: This manufacturing method is characterized by including a process for forming a groove on a silicon layer of an SOI substrate comprising the silicon layer, a buried oxide layer and a base silicon layer, a process for forming a pressure reference chamber by bonding the first insulator substrate equipped with a capacity electrode to the silicon layer so that the capacity electrode is stored in the groove, a process for removing by etching the whole base silicon layer, a process for forming a diaphragm by etching the silicon layer, and a process for bonding the silicon layer to the second insulator substrate equipped with a servo electrode. This sensor has a characteristic wherein the silicon layer has the thickness of 15-200 μm or the diaphragm and the servo electrode have a flat structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a capacitive pressure sensor and a manufacturing method thereof, and more particularly, to a servo capacitive pressure sensor having a large dynamic range and excellent dynamic characteristics, and a manufacturing method thereof.

Capacitance type pressure sensors are widely used as pressure sensors for vacuum devices and the like because they can measure with high accuracy and can be mass-produced using micromachine (MEMS) technology. An example of such a capacitive pressure sensor is shown in FIGS.
The pressure sensor of FIG. 5 has a three-layer structure of a first glass layer 1 having a capacitive electrode 11 and a reference electrode 12, a silicon layer 2 having a diaphragm 21, and a second glass layer 3 having a vent 31. Then, a groove is formed in the silicon layer 2 and bonded to the first glass layer 1 to form the pressure reference chamber 5. In the pressure reference chamber 5, for example, a non-evaporable getter 4 that adsorbs and removes gas is disposed, and the inside is maintained at a high vacuum.

The pressure sensor shown in FIG. 5 is manufactured by, for example, the manufacturing method shown in FIG.
Usually, after the oxide film 22 is formed on the silicon substrate having a thickness of about 350 μm and patterned, the silicon layer 2 is etched by, for example, about 10 μm using, for example, EPW (ethylenediamine pyrocatechol aqueous solution) to form the groove 23 for the pressure reference chamber. Form (A). Subsequently, the oxide film 22 is removed and thermal diffusion of boron is performed on the surface of the silicon layer 2 to form a high-concentration boron diffusion layer 27 of, for example, 7 μm (B).

After that, the glass substrate 1 having a thickness of about 1 mm in which the capacitor electrode 11 and the reference electrode 12 and further the grooves 16 for the terminals of these electrodes are formed and the silicon layer 2 are bonded by anodic bonding (C). After patterning the oxide film 22, silicon is etched using EPW to form the diaphragm 21 (D). Etching stops at the high-concentration boron diffusion layer 27, and this high-concentration boron diffusion layer 27 becomes the thickness of the diaphragm.
Finally, the bottom of the electrode terminal groove 16 is removed to penetrate the first glass layer 1 and the oxide film 22 is removed. Subsequently, the silicon layer 2 and the glass layer substrate 3 formed with the vent holes are anodically bonded, and electrode terminals 13 to 15 are formed to complete the sensor.

  When gas pressure is applied to the diaphragm 21 through the vent 31, the diaphragm 21 is displaced toward the capacitive electrode 11 according to the difference between the gas pressure and the pressure reference chamber 5. As a result, the capacitance between the capacitor electrode terminal 13 and the electrode terminal 15 of the diaphragm increases, and pressure is output by performing signal processing on a circuit (not shown) that converts and amplifies the increased amount into voltage. Note that the reference electrode 12 and its terminal 14 are used to correct a measurement error caused by a mechanical deformation of the pressure sensor due to a change in environmental temperature, resulting in a change in capacitance. Such a pressure sensor is used for measurement in a relatively narrow pressure range because the diaphragm comes into contact with the capacitive electrode when the pressure exceeds a predetermined value.

On the other hand, the servo-type capacitive pressure sensor shown in FIG. These sensors basically have the same structure as that shown in FIG. 5 except that a servo electrode is provided on the opposite side of the diaphragm from the capacitive electrode. In the pressure sensor of FIG. 7A, the electrode terminal is formed on the second glass layer 3.
When gas pressure is applied to the diaphragm 21 through the vent 31, the diaphragm 21 is displaced toward the capacitive electrode 11, but a voltage is applied to the servo electrode 32 so as to cancel this displacement, and the static electricity is applied between the servo electrode 32 and the diaphragm 21. The electric attractive force works, and the diaphragm 21 is pulled back to the original position. That is, even if there is a pressure fluctuation, the voltage is applied to the servo electrode 32 so that the diaphragm is always at the center position. Therefore, it is possible to measure up to a high pressure range and to provide a pressure sensor with a large dynamic range. It becomes.

Here, the voltage (electric field) applied to the servo electrode 32 increases with pressure, and in some cases may exceed 100 V. In order to reduce the servo voltage, the distance between the diaphragm and the servo electrode is set to reduce the servo voltage in the sensor system design. For example, it is designed to be 10 μm or less. In order to increase the measurement sensitivity, the distance between the diaphragm and the capacitive electrode is usually designed to be 10 μm or less. For this reason, protrusions 24 and 33 are provided on the diaphragm 21 or the servo electrode 32.
These servo-type pressure sensors can also be manufactured in the same manner as the sensor of FIG.
JP 11-326093 A JP 2001-124643 International Conference on Solid-State Sensor and Actuators, Chicago, June16-19,1997 Vol.2, p.1457-1460 J.Vac.Sci.Technol. B18 (6), 2692 (2000)

  As described above, in the case of the capacitive pressure sensor shown in FIG. 5, in order to form a diaphragm having a predetermined thickness with high accuracy and good reproducibility, the etch stop layer corresponds to the thickness of the diaphragm. It is essential to form a high-concentration boron layer. This is because the wet etching accuracy of silicon is usually about ± 5%, so that when a diaphragm is formed by etching under time control without providing an etch stop layer, for example, when a silicon substrate is deeply etched to about 300 μm. This is because the etching error is about ± 15 μm, making it difficult to produce a sensor with uniform characteristics. Therefore, in order to form a high-concentration boron layer, a diffusion process for a long time at a high temperature is required, which has been a factor in reducing productivity and lowering the price of the sensor.

  Conversely, since it is practically impossible to form a high-concentration boron diffusion layer of 10 μm or more by thermal diffusion, a diaphragm thicker than 10 μm must be controlled by the etching time, resulting in a large thickness error. There was a problem that the yield was low.

  The above situation also applies to the servo-type capacitive sensor shown in FIG. Furthermore, in the conventional servo sensor shown in FIG. 7A, since the protrusion 24 is formed on the diaphragm 21, it becomes easy to detect the surrounding vibration, which causes a pressure measurement error. There is. In the case of FIG. 7B, the problem of measurement error due to vibration is reduced, but when a voltage is applied to the servo electrode 32, the servo electrode protrusion 33 has a trapezoidal shape, so that the electric field is concentrated at the corners. This makes it difficult to draw the diaphragm 21 while keeping the diaphragm 21 in a flat shape, resulting in an error in the dynamic characteristics of the sensor.

  In addition, regardless of whether the conventional sensor is a servo type or not, as described above, the reference electrode is provided to reduce the measurement error due to the surrounding temperature fluctuation, but the measurement error is still large. In order to perform highly accurate pressure measurement, it was necessary to further reduce the output fluctuation accompanying the temperature change.

In order to solve the above problems, the present inventor manufactured sensors having various structures, and examined the relationship between the structure and sensor characteristics and the relationship between productivity. Among them, it has been found that the temperature dependence of the sensor output varies depending on the thickness of the silicon layer, and that the output error with respect to the temperature variation becomes smaller as the thin silicon substrate is used. Although the details of this reason are not clear at present, it is considered that the warpage increases as the silicon layer becomes thicker due to the warpage of the substrate due to the difference in thermal expansion coefficient between the glass layer and the silicon layer.
In addition, when a thin silicon substrate is used, the amount of etching during the formation of the diaphragm is reduced. As a result, the variation in the thickness of the diaphragm is reduced, and in the case of the servo type, the protrusion on the diaphragm or the servo electrode can be deleted. Was also confirmed.

  Based on these findings, the present inventor has further studied the thinning of the silicon layer. However, the thinner the silicon substrate, the more difficult it is to handle, and the thickness is, for example, 100 μm or less depending on the size of the substrate. It turned out that production was actually impossible. Therefore, the present inventor conducted a similar study using an SOI (Silicon On Insulator) substrate in place of the conventional silicon substrate, not only eliminating the above productivity problem but also improving the sensor characteristics. The invention has been completed.

That is, an object of the present invention is to provide a manufacturing method of a capacitive sensor that can manufacture capacitive pressure sensors having diaphragms of various thicknesses with a simple process and high yield. And It is another object of the present invention to provide a servo-type capacitive sensor that has no error due to vibration and has excellent dynamic characteristics.
It is another object of the present invention to provide a capacitance type sensor having a small output fluctuation with respect to a temperature fluctuation of the ambient temperature.

The method of manufacturing a capacitive pressure sensor according to the present invention includes a first insulator layer provided with a capacitive electrode, a silicon layer provided with a diaphragm at a position facing the capacitive electrode, and an air flow for introducing a gas into the diaphragm. In a method of manufacturing a capacitive pressure sensor in which a second insulator layer having a mouth is laminated, or a first insulator layer having a capacitor electrode, and a diaphragm at a position facing the capacitor electrode For manufacturing a servo-type capacitive pressure sensor in which a silicon layer, a vent for introducing gas into the diaphragm, and a second insulator layer having a servo electrode at a position facing the diaphragm are laminated In
Forming a groove for a pressure reference chamber in the silicon layer of an SOI substrate comprising a silicon layer, a buried oxide layer, and a base silicon layer;
Bonding the insulator substrate on which the capacitive electrode is formed and the silicon layer so as to fit the capacitive electrode in the groove, and forming a pressure reference chamber;
Etching away all of the base silicon layer;
Etching the silicon layer to form the diaphragm having a predetermined thickness;
Bonding the silicon layer to the vent or the insulator substrate on which the vent and the servo electrode are formed;
It is characterized by including.

The capacitive pressure sensor of the present invention includes a first insulator layer having a capacitive electrode, a silicon layer having a diaphragm at a position facing the capacitive electrode, a vent for introducing a gas into the diaphragm, A servo-type capacitive pressure sensor in which a second insulator layer provided with a servo electrode at a position facing the diaphragm is laminated, wherein the diaphragm and the servo electrode have a flat structure. To do.
Alternatively, a first insulator layer including a capacitor electrode, a silicon layer including a diaphragm at a position facing the capacitor electrode, and a second insulator layer including a vent for introducing gas into the diaphragm, In the laminated capacitive pressure sensor, the silicon layer is a silicon layer of an SOI substrate including a silicon layer, a buried oxide layer, and a base silicon layer, and has a thickness of 15 to 200 μm. Features.

  As described above, the present invention can reduce the thickness of the silicon layer on which the diaphragm is formed by using the SOI substrate, and as a result, realizes a capacitive pressure sensor having excellent temperature characteristics. be able to.

  In addition, a high-temperature thermal diffusion process for forming a high-concentration boron layer as an etch stop layer is not required, so that the production process can be simplified and the cost of the sensor can be reduced. Furthermore, it becomes possible to manufacture diaphragms with various thicknesses with high accuracy.

  In addition, unlike conventional servo-type capacitive pressure sensors, it is possible to eliminate protrusions on the servo electrode or diaphragm, and without being affected by surrounding vibrations, and with high precision and excellent dynamic characteristics. A highly sensitive pressure sensor can be realized.

  Hereinafter, the present invention will be described in more detail with reference to examples.

An example of the capacitive pressure sensor of the present invention is shown in FIG. 1, and the manufacturing method will be described with reference to FIG.
The capacitance type pressure sensor of the present embodiment has a three-layer structure in which a first insulator layer 1, a silicon layer 2, and a second insulator layer 3 are bonded to each other. A diaphragm 21 and a vent 31 are formed.

Here, the thickness of the silicon layer is preferably 200 μm or less, more preferably 50 μm or less. By thinning the silicon layer in this way, the temperature characteristics of the pressure sensor are improved and the ambient temperature varies. Output fluctuation is small and high-precision pressure measurement is possible. Furthermore, diaphragms of various thicknesses can be manufactured with high accuracy without variation. The lower limit of the thickness of the silicon layer is not particularly limited, but it is generally set to 15 μm or more in consideration of the thickness of the diaphragm and the depth of the groove of the pressure reference chamber in terms of strength and manufacturing of the diaphragm and the electrode. Is.
The first and second insulator layers are made of a material having a thermal expansion coefficient close to that of silicon. For example, Pyrex (registered trademark) glass is preferably used.

  A method for manufacturing a capacitive pressure sensor having a thin silicon layer as in this embodiment will be described below. Specifically, FIG. 3 shows a method of manufacturing a high-sensitivity capacitive pressure sensor having a measurement range of 0.1 to 133 Pa with a silicon layer thickness of 34 μm, a diaphragm thickness of 7 μm, and a distance between the capacitive electrode and the diaphragm of 10 μm. Will be described.

First, an SOI substrate having a silicon layer 2 having a thickness of 34 μm, a buried oxide layer 25 having a thickness of 1 μm, and a base silicon layer 26 having a thickness of 350 μm prepared, and a thermal oxide film 22 having a thickness of 1 μm formed on the surface thereof. Then, the upper oxide film 22 is patterned (A).
The silicon layer 2 is etched to form a groove 23 having a depth of 17 μm to be a pressure reference chamber (B). Here, as an etchant, an etchant having a high etching rate with respect to silicon and an extremely low etching rate with respect to glass or an oxide film, such as EPW (ethylenediamine pyrocatechol aqueous solution), TMAH (tetramethyl hydroxide). Ammonium), KOH (potassium hydroxide) and the like are used.
After the oxide film 22 is removed, the first insulating substrate 1 (for example, a Pyrex (registered trademark) glass substrate having a thickness of 1 mm) on which a capacitor electrode 11 having a thickness of 7 μm and a groove 16 for forming a terminal are formed in advance. A non-evaporable getter 4 is placed on the substrate and anodic bonded in a vacuum (C).

  Thereafter, the entire base silicon layer 26 of the SOI substrate is removed by etching. As described above, EPW (ethylenediamine pyrocatechol aqueous solution), TMAH (tetramethylammonium hydroxide), KOH, or the like is used as the etching solution. This makes it possible to perform etching leaving only the silicon layer 2 having a thickness of 34 μm and the buried oxide layer 25 having a thickness of 1 μm without performing precise time management. Next, the buried oxide layer 25 is patterned to form a diaphragm (D).

  Thereafter, the silicon layer 2 is etched by 10 μm to form a diaphragm 21 having a thickness of 7 μm (E). Here, unlike the conventional method, an etch stop layer is not provided, so the etching amount is managed by time. As a result, an error of about ± 5% occurs as in the conventional example, but since the etching amount is as small as 10 μm, the variation can be suppressed to within ± 0.5 μm, and finally the variation in sensor characteristics is greatly reduced. be able to.

  Next, after etching and removing the bottom portion of the groove 16 of the buried oxide layer 25 and the first insulator layer 1 with hydrofluoric acid or the like, the silicon layer 2 and the second insulator substrate 3 (for example, a glass substrate having a thickness of 1 mm) ) Is anodically bonded (F), and finally, electrode terminals 13 to 15 are formed to complete the sensor (G).

  Through the above process, a capacitive pressure sensor having a capacitance electrode-diaphragm electrode distance of 10 μm and a diaphragm thickness of 7 μm can be manufactured without performing highly accurate etching control. Since this capacitive pressure sensor has a thin silicon layer of 34 μm, even if it is bonded to an insulator layer (glass substrate), the warpage of the substrate due to the difference in the thermal expansion coefficient between the two layers can be suppressed, and the temperature fluctuation Can be obtained. In addition, since there is no need to form an etch stop layer, the manufacturing process is simplified and productivity is improved.

In the case of manufacturing a sensor having other dimensions, it may be manufactured using an SOI substrate having a necessary silicon layer thickness. For example, in the case of a measuring sensor in the pressure range of 0.1 to 133 Pa, the diaphragm thickness is ⁵ to 8 μm, but in the case of a sensor of 100 to 1.33 × 10 ⁵ Pa, the diaphragm thickness is generally 40 to 70 μm. Is. Therefore, it is impossible to form an etch stop layer (high-concentration boron diffusion layer) having such a thickness, and only a sensor having a large variation can be obtained in the past. However, according to the present invention, for example, a silicon layer has a thickness of 70 to 100 μm. Using this SOI substrate, a pressure sensor with small variations can be manufactured in the same manner as in the above embodiments.

Next, an example of the servo capacitive pressure sensor of the present invention is shown in FIG.
Although the basic structure is the same as that of the capacitive pressure sensor shown in FIG. 1, a servo electrode 32 is formed on the second insulator layer 3 so as to face the diaphragm 21, and a terminal 18 connected to the servo electrode 32 The difference is that it is formed on one insulator layer 1. In the conventional servo-type capacitive pressure sensor, a trapezoidal protrusion structure is formed on the diaphragm and the servo electrode. In this embodiment, the distance between the capacitive electrode 11 and the diaphragm 21 and the servo are not provided without the trapezoidal structure. For example, the distance between the electrode 32 and the diaphragm 21 may be 10 μm or less.

  FIG. 4 is a schematic diagram for explaining a manufacturing process of the servo capacitive pressure sensor of FIG. Here, a manufacturing method of a servo capacitive pressure sensor in which the distance between the capacitive electrode and the diaphragm is 10 μm, the distance between the servo electrode and the diaphragm is 10 μm, and the thickness of the diaphragm is 7 μm will be described.

  First, an SOI substrate having a silicon layer 2 thickness of 34 μm, a buried oxide layer 25 thickness of 1 μm, and a base silicon layer 26 thickness of 350 μm is prepared, and a thermal oxide film 22 is formed on the surface thereof by 1 μm. The oxide film 22 on the upper surface is patterned (A). The silicon layer 2 is etched using a silicon etchant until the buried oxide layer 25 is exposed. Next, the upper oxide film 22 is patterned (B), and the silicon layer 2 is etched by 17 μm to form a groove 23 (C). Subsequently, after the oxide film 22 is removed, the non-evaporable getter 4 is disposed between the silicon layer 2 and the first insulator substrate 1 on which the capacitor electrode 11 and the reference electrode 12 having a thickness of 7 μm are formed. Then, both are anodically bonded (D).

Thereafter, all the base silicon layer 26 of the SOI substrate is removed by etching using an etchant such as EPW (E). Thereafter, the buried oxide layer 25 on the lower surface of the substrate is patterned, and when the silicon layer 2 is etched by 10 μm, a 7 μm-thick diaphragm is formed (F).
Next, using hydrofluoric acid or the like, the buried oxide layer 25 and the bottom of the groove 16 of the first insulator layer 1 are etched away (G), and anodic bonded to the second insulator substrate 3 on which the servo electrode 32 is formed. (H). Here, the servo electrode 32 can be formed, for example, by depositing a metal film having a thickness of several hundreds of nanometers by vapor deposition or sputtering, and then patterning. Finally, the electrode terminals 13 to 15 are formed to complete the servo capacitive pressure sensor (I).

  As described above, according to this embodiment, both the servo electrode and the diaphragm have a flat structure without protrusions, and both the capacitance electrode and the distance between the diaphragm and the distance between the servo electrode and the diaphragm are as small as 10 μm or less. Thus, a highly sensitive servo electrostatic pressure sensor can be realized, and control can be performed with a small servo voltage, so that a pressure sensor with a larger dynamic range can be realized. In addition, since a metal film can be used for the servo electrode, the manufacturing process is greatly simplified.

  As described above, when the diaphragm is formed by etching, the present invention can control the diaphragm thickness and the inter-electrode distance with high accuracy without forming a high-concentration boron diffusion layer as an etch stop layer in advance. It becomes possible. However, the present invention does not exclude the etch stop layer, and it goes without saying that the etch stop layer may be formed as necessary.

It is typical sectional drawing which shows an example of the electrostatic capacitance type pressure sensor of this invention. It is a typical sectional view showing an example of the servo type capacitive pressure sensor of the present invention. It is typical sectional drawing which shows the manufacturing method of the electrostatic capacitance type pressure sensor shown in FIG. FIG. 3 is a schematic cross-sectional view showing a manufacturing method of the servo capacitive pressure sensor shown in FIG. 2. It is typical sectional drawing which shows an example of the conventional electrostatic capacitance type sensor. It is typical sectional drawing which shows the manufacturing method of the electrostatic capacitance type pressure sensor shown in FIG. It is a typical sectional view showing an example of the conventional servo type capacitive sensor.

Explanation of symbols

1 first insulator layer (substrate),
2 silicon layer,
3 Second insulator layer (substrate),
4 Non-evaporable getter,
5 Pressure reference chamber,
11 capacitive electrodes,
12 reference electrode,
13 capacitive electrode terminal,
14 Reference electrode terminal,
15 Electrode terminal of diaphragm,
16 groove for electrode terminal,
18 Servo electrode terminals,
21 Diaphragm,
22 Oxide film,
23 groove for pressure reference chamber,
24, 33 protrusions,
25 buried oxide layer,
26 base silicon layer,
27 High-concentration boron diffusion layer,
31 Vents,
32 Servo electrode.

Claims (7)

A first insulator layer provided with a capacitor electrode, a silicon layer provided with a diaphragm at a position facing the capacitor electrode, and a second insulator layer provided with a vent for introducing gas into the diaphragm are laminated. In the manufacturing method of a capacitive pressure sensor,
Forming a groove for a pressure reference chamber in the silicon layer of an SOI substrate comprising a silicon layer, a buried oxide layer, and a base silicon layer;
Bonding the insulator substrate on which the capacitive electrode is formed and the silicon layer so as to fit the capacitive electrode in the groove, and forming a pressure reference chamber;
Etching away all of the base silicon layer;
Etching the silicon layer to form the diaphragm having a predetermined thickness;
Bonding the silicon layer and the insulator substrate formed with the vent;
A method for manufacturing a capacitive pressure sensor, comprising: A first insulator layer provided with a capacitive electrode; a silicon layer provided with a diaphragm at a position facing the capacitive electrode; a vent hole for introducing a gas into the diaphragm; and a servo electrode provided at a position facing the diaphragm. In the manufacturing method of the servo-type capacitive pressure sensor in which the second insulator layer is laminated,
Forming a groove for a pressure reference chamber in the silicon layer of an SOI substrate comprising a silicon layer, a buried oxide layer, and a base silicon layer;
Bonding the insulator substrate on which the capacitive electrode is formed and the silicon layer so as to fit the capacitive electrode in the groove, and forming a pressure reference chamber;
Etching away all of the base silicon layer;
Etching the silicon layer to form the diaphragm having a predetermined thickness;
Bonding the silicon layer to the insulating substrate on which the vent hole and the servo electrode are formed. A method for manufacturing a capacitive pressure sensor, comprising:   3. The method of manufacturing a capacitive pressure sensor according to claim 1, wherein a boron diffusion layer serving as an etch stop layer when forming the diaphragm is not formed in the silicon layer. 4.   The method of manufacturing a capacitive pressure sensor according to claim 1, wherein the silicon layer has a thickness of 15 to 200 μm.   A first insulator layer provided with a capacitive electrode; a silicon layer provided with a diaphragm at a position facing the capacitive electrode; a vent hole for introducing a gas into the diaphragm; and a servo electrode provided at a position facing the diaphragm. A capacitive electrostatic pressure sensor in which a second insulator layer is laminated, wherein the diaphragm and the servo electrode have a flat structure.   A first insulator layer provided with a capacitor electrode, a silicon layer provided with a diaphragm at a position facing the capacitor electrode, and a second insulator layer provided with a vent for introducing gas into the diaphragm are laminated. A capacitive pressure sensor, wherein the silicon layer is a silicon layer of an SOI substrate including a silicon layer, a buried oxide layer, and a base silicon layer, and has a thickness of 15 to 200 μm. Capacitive pressure sensor. The capacitive pressure sensor according to claim 6, wherein the second insulator layer includes a servo electrode at a position facing the diaphragm, and the diaphragm and the servo electrode have a flat structure.

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