CN203551501U - High-sensitivity gas sensor based on micro-channel plate three-dimensional structure - Google Patents
High-sensitivity gas sensor based on micro-channel plate three-dimensional structure Download PDFInfo
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- CN203551501U CN203551501U CN201320639249.8U CN201320639249U CN203551501U CN 203551501 U CN203551501 U CN 203551501U CN 201320639249 U CN201320639249 U CN 201320639249U CN 203551501 U CN203551501 U CN 203551501U
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Abstract
The utility model discloses a high-sensitivity gas sensor based on a micro-channel plate three-dimensional structure. The high-sensitivity gas sensor consists of a detection module and a heating module, wherein the detection module and the heating module are bonded through electric conduction slurry; each of the detection module and the heating module is provided with two lead leading-out electrodes, namely, a detection electrode and a heating electrode respectively; the detection module and the heating module are packaged in a package tube shell; the package tube shell is provided with at least four electrodes; the detection module consists of an upper electrode, a micro-channel plate and a lower electrode from top to bottom in sequence; the heating module consists of a heat insulating substrate material, a heating resistance coil and an insulating film from bottom to top in sequence. The high-sensitivity gas sensor has the beneficial effects that the sensitivity of the gas sensor can be improved greatly; the multi-channel structure of the micro-channel plate is very beneficial to smooth passing of detected gas, and the testing sensitivity is improved and the reaction speed is further increased; the stability and the reliability of a gas-sensitive device are enhanced.
Description
Technical field
The utility model relates to a kind of high sensitive gas sensor, is specially a kind of structural design, device preparation and system building of the high sensitivity gas sensor based on microchannel plate three-dimensional structure, belongs to field of semiconductor devices.
Background technology
Along with improving constantly and pay attention to day by day to environmental protection of flourish, the people's living standard of industrial and agricultural production, detection to various poisonous, harmful gases, monitoring to atmospheric pollution, industrial gaseous waste, and the detection of food and habitation environment quality is all had higher requirement to gas sensor.The microminiaturization that the successful Application of the new material development technology such as micro-processing technology, nanometer, film is gas sensor, integrated and intelligently provide good precondition.Gas sensor will be developed on the basis making full use of the multidisciplinary synthesis technology such as micromechanics and microelectric technique, computer technology, signal processing technology, sensing technology, fault diagnosis technology, intellectual technology rapidly.
In various gas sensors, what be most widely used is with tin ash (SnO
2) etc. the Semiconductor gas sensors material semiconductor gas sensor that is representative.Its principle of work is, as the contact of Semiconductor gas sensors material CO, H
2, CH
4, C
2h
4, C
2h
5during the gases such as OH, its resistivity can change along with gaseous species and concentration, the resistance ratios R before and after changing
a/ R
gthe detection sensitivity that is reflecting this gas sensitive.Yet, traditional slug type semiconductor gas sensing device exist sensitivity lower, be difficult to accomplish miniaturization and the problem such as integrated.Along with the development of micromechanics and microelectric technique, the micro semiconductor gas sensor based on micro-processing technology can be expected to address these problems well, and the major advantage that it possesses has: the device that can make microminiaturization, low voltage operating; Easily realize and survey the integrated of gas part and heating module; Device temperature characteristic is good; Device is easily assembled; Be easy to produce in enormous quantities, reduce costs; Easily and integrated circuit modules and wireless transmitter module integrated, realize intelligent sensing network.
In recent years, existing a plurality of units are studied the micro semiconductor gas sensor based on micro-processing technology both at home and abroad, its common way is, the Semiconductor gas sensors membraneous material of preparing planar structure between potential electrode, the preparation method of its air-sensitive thin film material has conventionally: sol-gal process, silk screen print method, chemical vapour deposition technique, molecular beam epitaxy, radio-frequency magnetron sputter method, spray-on process, electrochemical deposition etc.In these devices, the normally simple plane plastic film mulch of the structure of air-sensitive thin film material, and the gas sensitive device of this two-dimension plane structure, the surface of contact of its air-sensitive thin film material and test gas is only a plane, sensitivity is lower, is difficult to realize effective detection of micro-light concentration gas.People expect very naturally thus, can increase substantially the specific surface area of gas sensitive by preparing the method for nanofiber, nano wire or other surface three dimension structure, thereby reach the object that improves gas sensor sensitivity.Yet, iff realize above-mentioned nanostructured in a planar structure, not only its structural reliability and stability are difficult to guarantee, and the lifting of the specific surface area of its rambling nanofibrous structures on effective resistance between two potential electrode is very limited.Other research groups have also attempted coming by preparing the method for the air-sensitive film of hollow type or porous type the specific surface area of boost device, this is a kind of very promising method, but also exist in its device at present, how to allow extraneous gas successfully enter rapidly the problem of film internal voids, the lifting of effective ratio area remains a difficult point.
Utility model content
The purpose of this utility model is to provide a kind of high sensitivity gas sensor based on microchannel plate (Microchannel Plate, MCP) three-dimensional structure; The problems referred to above of prior art have been solved.
The purpose of this utility model is to be achieved through the following technical solutions:
High sensitivity gas sensor based on microchannel plate three-dimensional structure, is comprised of detection module and heating module two parts; Bonding by electrocondution slurry between detection module and heating module, make its device that becomes one.Detection module and heating module are respectively arranged with two lead-in wire extraction electrodes, are respectively detecting electrode and heating electrode, and described detection module and heating module are packaged in encapsulating package, total at least four electrodes on described encapsulating package; Described detection module, its structure is followed successively by top electrode, microchannel plate and bottom electrode from top to bottom; Described heating module, its structure is followed successively by partiting thermal insulation backing material, heating resistor coil and insulation film from bottom to top.
The transversary of described microchannel plate is followed successively by microchannel plate skeleton structure, side wall insulating layer and air-sensitive thin film material from inside to outside.
The principle of semiconductor gas sensor work institute foundation is: as the contact of Semiconductor gas sensors material CO, H
2, CH
4, C
2h
4, C
2h
5during the gases such as OH, its resistivity can change along with gaseous species and concentration, the resistance ratios R before and after changing
a/ R
gthe detection sensitivity that is reflecting this gas sensitive.The utility model proposes the 3-D solid structure that utilizes microchannel plate porous sidewall, making has the gas sensor of three-dimensional structure, utilize the geometric properties of this structure, increase substantially the effective ratio area of gas sensitive film, realize the high rate of change of its thin-film electro resistance when test, thereby greatly promoted the sensitivity of gas sensor.
Compare with existing mini type gas sensor, the beneficial effects of the utility model are: the 3-D solid structure that utilizes microchannel plate porous sidewall, can make the air-sensitive thin film material depositing on its sidewall form three-dimension film structure, greatly improve the effective ratio area of gas sensitive film, realize the high rate of change of its thin-film electro resistance when test, thus the significantly sensitivity of lift gas sensor.The multi-pore channel structure of microchannel plate is very beneficial for passing through smoothly of detected gas, can further improve measurement sensitivity and the reaction velocity of device.Meanwhile, the framed structure of microchannel plate, is very beneficial for protecting the nanostructured of the air-sensitive thin film material of growth inside, thereby has strengthened stability and the reliability of gas sensitive device.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model gas sensor;
Fig. 2 is encapsulating structure schematic top plan view of the present utility model;
The perspective view of Fig. 3 encapsulating structure of the present utility model.
Fig. 4 is the plan structure schematic diagram of the utility model detection module and heating module.
Fig. 5 be the utility model detection module and heating module cross-sectional view.
Fig. 6 is the cross-sectional view of detection module.
All schematic diagram are not all equal proportions above.
In figure: 1, detection module 2, heating module 3, electrocondution slurry 4, detecting electrode 5, heating electrode 6, encapsulation sheath body 7, top electrode 8, silicon Microchannel Plates 9, bottom electrode 10, microchannel plate skeleton structure 11, side wall insulating layer 12, air-sensitive thin film material 13, partiting thermal insulation backing material 14, heating resistor coil 15, insulation film.
Embodiment
Below in conjunction with specific embodiment, further set forth technical characterstic of the present utility model:
As shown in Figure 1, the high sensitivity gas sensor based on microchannel plate three-dimensional structure, is comprised of detection module 1 and heating module 2 two parts; Bonding by electrocondution slurry 3 between detection module 1 and heating module 2, make its device that becomes one.As shown in Figures 2 and 3, detection module 1 and heating module 2 are respectively arranged with two lead-in wire extraction electrodes, be respectively detecting electrode 4 and heating electrode 5, described detection module and heating module are packaged in encapsulating package, total at least four electrodes on described encapsulating package 6; As shown in Figure 4 and Figure 5, described detection module 1, its structure is followed successively by top electrode 7, microchannel plate 8 and bottom electrode 9 from top to bottom; Described heating module 2, its structure is followed successively by partiting thermal insulation backing material 13, heating resistor coil 14 and insulation film 15 from bottom to top.
As shown in Figure 6, the transversary of described microchannel plate 8 is followed successively by microchannel plate skeleton structure 10, side wall insulating layer 11 and air-sensitive thin film material 12 from inside to outside;
In the present embodiment, detection module part, makes microchannel plate three-dimensional structure by silicon materials, and side wall insulating layer is silicon dioxide, and air-sensitive thin film material is tin ash, and upper/lower electrode is metal platinum.Heating module part, is followed successively by Al from bottom to top
2o
3potsherd, metal platinum heating resistor coil, insulating silicon nitride film.Concrete manufacturing process is as follows:
(1) method that adopts patent 201110196442.4 to provide, and the device that adopts patented claim 201120406111.4 to provide, on 4 inches of silicon chips, make to obtain silicon microchannel plate, 1 micron of 5 microns of x5 micron of each microchannel length of side, dark 250 microns, sidewall thickness.Through cut, acquisition diameter is the disk of 3 millimeters;
(2) method that adopts patent 201210402277.8 to provide, carries out thermal oxide to silicon microchannel plate, obtains the dioxide sidewalls insulation course of 0.5 micron;
(3) adopt sol-gal process, the tin ash air-sensitive thin film material of 0.5 micron of deposit on the sidewall of microchannel;
(4) adopt the method for magnetron sputtering, at the metal platinum electrode of 0.3 micron of the both sides up and down of microchannel plate difference deposit, the Titanium of first sputter 20 nanometers is to strengthen adhesiveness before this.To this step, can obtain the detection module of device;
(5) at the Al of 4 inches
2o
3in ceramic disks substrate, carry out photoetching, the figure of definition heating resistor coil;
(6) adopt the method for magnetron sputtering, at Al
2o
3the metal platinum of 0.3 micron of deposit in ceramic disks substrate, the Titanium of first sputter 20 nanometers is to strengthen adhesiveness before this;
(7) adopt and peel off (Lift-off) technique, obtain the figure of metal platinum heating resistor coil;
(8) adopt plasma-reinforced chemical vapor deposition method (PECVD), at the silicon nitride of 0.5 micron of surface deposition;
(9) in silicon nitride surface, carry out photoetching again, the figure of definition heating resistor coil lead electrode part;
(10) adopt the method for reactive ion etching (RIE), etch silicon nitride, until expose the figure of heating resistor coil lead electrode part.To this step, can obtain the heating module of device;
(11) use the method for serigraphy, deposit electrocondution slurry on heating module;
(12) installation and measuring module on electrocondution slurry is then toasted more than 2 hours under the environment of 200 ℃;
(13) to the Al as heating module
2o
3ceramic disks is carried out cut, obtains the square device of 4.5 millimeters of x4.5 millimeters;
(14) this square device is installed to circular base as shown in Figure 2, the line lead bonding of going forward side by side;
(15) cover netted pipe cap.Gas sensor completes.
By measuring and calculating, take the microchannel degree of depth, the 2x2 micro-channel units of 250 microns, the area of 12 microns of x12 microns is example, it is 20000 square microns that the contact area of gas sensitive film and gas is increased considerably by 144 square microns of original two dimensional surface form, nearly 140 times of lifting amplitudes.
Gas sensor based on microchannel plate three-dimensional structure described in the utility model, for the device structure design of gas sensor provides new thinking, can significantly promote the measurement sensitivity of gas sensitive device, for the accurate detection of the micro-light concentration gas in industrial and agricultural production and people's daily life provides good instrument and means.
Claims (2)
1. the high sensitivity gas sensor based on microchannel plate three-dimensional structure, is characterized in that: detection module and heating module two parts, consist of; Bonding by electrocondution slurry between detection module and heating module; Detection module and heating module are respectively arranged with two lead-in wire extraction electrodes, are respectively detecting electrode and heating electrode, and described detection module and heating module are packaged in encapsulating package, total at least four electrodes on described encapsulating package; Described detection module, its structure is followed successively by top electrode, microchannel plate and bottom electrode from top to bottom; Described heating module, its structure is followed successively by partiting thermal insulation backing material, heating resistor coil and insulation film from bottom to top.
2. the high sensitivity gas sensor based on microchannel plate three-dimensional structure according to claim 1, is characterized in that: the transversary of described microchannel plate is followed successively by microchannel plate skeleton structure, side wall insulating layer and air-sensitive thin film material from inside to outside.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103543183A (en) * | 2013-10-16 | 2014-01-29 | 华东师范大学 | High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor |
| CN106370706A (en) * | 2016-11-01 | 2017-02-01 | 苏州科技大学 | Pd-based variable capacitive hydrogen sensor and preparation method thereof |
| CN109374731A (en) * | 2018-11-14 | 2019-02-22 | 江苏科技大学 | A kind of quartz crystal microbalance of annular indium-tin oxide electrode |
| CN113092541A (en) * | 2021-04-08 | 2021-07-09 | 香港科技大学深圳研究院 | Vertical three-dimensional nano gas sensor with micro heater and preparation method |
| CN113720885A (en) * | 2021-08-26 | 2021-11-30 | 河南森斯科传感技术有限公司 | Semiconductor gas sensor and automatic packaging method thereof |
-
2013
- 2013-10-16 CN CN201320639249.8U patent/CN203551501U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103543183A (en) * | 2013-10-16 | 2014-01-29 | 华东师范大学 | High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor |
| CN103543183B (en) * | 2013-10-16 | 2016-05-04 | 华东师范大学 | High sensitivity gas sensor preparation method based on microchannel plate three-dimensional structure |
| CN106370706A (en) * | 2016-11-01 | 2017-02-01 | 苏州科技大学 | Pd-based variable capacitive hydrogen sensor and preparation method thereof |
| CN106370706B (en) * | 2016-11-01 | 2019-06-18 | 苏州科技大学 | A kind of Pd base variable capacitance type hydrogen gas sensor and preparation method thereof |
| CN109374731A (en) * | 2018-11-14 | 2019-02-22 | 江苏科技大学 | A kind of quartz crystal microbalance of annular indium-tin oxide electrode |
| CN109374731B (en) * | 2018-11-14 | 2021-07-13 | 江苏科技大学 | Quartz crystal microbalance with annular indium tin oxide electrode |
| CN113092541A (en) * | 2021-04-08 | 2021-07-09 | 香港科技大学深圳研究院 | Vertical three-dimensional nano gas sensor with micro heater and preparation method |
| CN113720885A (en) * | 2021-08-26 | 2021-11-30 | 河南森斯科传感技术有限公司 | Semiconductor gas sensor and automatic packaging method thereof |
| CN113720885B (en) * | 2021-08-26 | 2022-02-18 | 河南森斯科传感技术有限公司 | Semiconductor gas sensor and automatic packaging method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140416 Termination date: 20141016 |
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| EXPY | Termination of patent right or utility model |