CN103207021B - High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof - Google Patents
High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN103207021B CN103207021B CN201310067012.1A CN201310067012A CN103207021B CN 103207021 B CN103207021 B CN 103207021B CN 201310067012 A CN201310067012 A CN 201310067012A CN 103207021 B CN103207021 B CN 103207021B
- Authority
- CN
- China
- Prior art keywords
- absorbing material
- substrate
- photoresist
- support membrane
- thermocouple bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention relates to a high-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and a manufacturing method thereof. The high-performance MEMS thermopile infrared detector structure comprises a substrate. A medium supporting film is arranged on the upper surface of the substrate, and a thermal isolation cavity is formed in the substrate; an absorbing material supporting film is arranged right above the thermal isolation cavity, and a nanofiber body is arranged on the absorbing material supporting film; a plurality of thermopiles are arranged outside the absorbing material supporting film and electrically connected integrally after being connected in series; detecting hot ends of the thermopiles are contacted with the absorbing material supporting film, and detecting cold ends of the thermopiles are contacted with the substrate through the medium supporting film; and metal electrodes for outputting detecting voltage are arranged outside the thermopiles connected in series, and the detecting cold ends of the thermopiles are arranged above the outside of the thermal isolation cavity. A manufacturing process of the nanofiber body is convenient, and the nanofiber body is simple in structure and easy to achieve and facilitates monolithic integration. Simultaneously, response rate and detecting rate of devices are high, the manufacturing method can be compatible with the complementary metal oxide semi-conductor (CMOS) process, an application range is wide, and the structure is safe and reliable.
Description
Technical field
The present invention relates to a kind of infrared detector structure and preparation method thereof, especially a kind of high-performance MEMS thermopile IR detector structure and preparation method thereof, specifically a kind of high-performance thermopile IR detector structure based on nanofiber body and preparation method thereof, belongs to the technical field of MEMS.
Background technology
MEMS thermopile IR detector is a kind of typical device in sensor measuring field, it is one of core component of the sensor measuring devices such as composition temperature sensor, Root Mean square Converter, gas sensor, thermal flow meter, meanwhile, small size thermopile IR detector also can build infrared focal plane array (FPA) device and realize infrared imaging.Thermopile IR detector is compared with the infrared eye (as thermoelectric type infrared eye and thermosensitive resistance type infrared eye etc.) based on other principle of work has constant radiant amount of can surveying, without the need to being biased voltage, without the need to chopper, being more suitable for the significantly overall merit such as Mobile solution and field studies.Thus, MEMS((Micro-Electro-Mechanical Systems)) thermopile IR detector applies have very important significance for realizing more broad infrared acquisition, it is civilian, military application prospect is wide, and commercial value and market potential are very huge.Can say, the research and development about MEMS thermopile IR detector has formed 21 century one new hi-tech industry growth point.Can predict, MEMS thermopile IR detector by sensor measuring numerous in formed and apply more widely.Particularly, along with micro-electromechanical technology, comprise the increasingly mature of the technological means such as device layout, manufacture, packaging and testing, MEMS thermopile IR detector will highlight more importantly status.
Responsiveness and detectivity are two important performance indexes describing infrared eye, determine the application potential of infrared eye in different field.Wherein, responsiveness is the ratio that device exports electric signal and incident IR radiation power, characterizes the sensitivity of infrared eye response infrared radiation, affects again the value of detectivity simultaneously largely.For the device architecture of certain size, increase the ratio that uptake zone area accounts for total area, increase the logarithm of thermopair simultaneously, be conducive to the responsiveness and the detectivity that improve device.In addition, for all fixed thermopile IR detectors such as structure, dimensional parameters and thermocouple materials, the value of its responsiveness and detectivity depends on the absorption efficiency of infrared absorption district to infrared radiation.Silicon nitride film is commonly used for the material in infrared absorption district in the research of infrared sensor, but its absorption efficiency is not high in conventional infrared wavelength range, and then the infrared sensor based on silicon nitride infrared absorption layer cannot obtain very high responsiveness and detectivity.Given this, the performance index of detector be improved, the absorption efficiency in infrared absorption district should be increased.In the many decades studied infrared eye, scientific research personnel have developed multiplely to be had high-absorbility and can be used as material or the structure in infrared absorption district.Wherein, the nanometer coarse structure on its surface of Jin Heiyin and have good infrared absorption effect, again because its thermal capacitance is lower, becomes a kind of material be favourably welcome in the research of infrared eye.When adopting golden black-materials to be infrared absorption district, the responsiveness of device and detectivity can correspondingly improve.But the black preparation technology of gold relates to the operations such as the aggegation of evaporation of metal and metal nanoparticle, and process is comparatively complicated, and the compatibility of itself and CMOS technology is also poor, generally can only be produced on the surface of structure after device architecture machines again.Given this, be that its large batch of production of detector of uptake zone is just restricted with dark fund.The resonance effect that 1/4 wave resonance structure produces when utilizing 1/4 wavelength of thickness of dielectric layers and directs light wave to match makes the absorption efficiency in infrared absorption district reach maximum.But by the restriction of condition of resonance, the detector being uptake zone with 1/4 wave resonance structure can only sensitivity center's wavelength be the infrared radiation of a certain particular value.In addition, the requirement extremely stringent to technological parameter when preparing 1/4 wave resonance structure, if slightly do not mate between thickness of dielectric layers with wavelength, will cause the significant attenuation of infrared absorption efficiency.The black silicon that large-area nano-pole forest structure is formed also is used to infrared absorption district; but need when discharging device architecture to carry out special protection to black silicon; in order to avoid black silicon structure is destroyed, this just adds the complexity of device preparation method to a certain extent.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of high-performance MEMS thermopile IR detector structure and preparation method thereof is provided, the preparation process of its nanofiber body is convenient, the structure of MEMS thermopile IR detector is simply easy to realize, be convenient to single-chip integration, simultaneously the responsiveness of device, detectivity are high, again can be mutually compatible with CMOS technology, applied widely, safe and reliable.
According to technical scheme provided by the invention, described high-performance MEMS thermopile IR detector structure, comprises substrate; The upper surface of described substrate arranges dielectric support film, and the release baffle element in described dielectric support film and substrate forms release barrier strip jointly, and the top in substrate forms hot isolated chambers by release barrier strip; Be provided with absorbing material support membrane directly over hot isolated chambers, described absorbing material support membrane is provided with the nanofiber body for absorbing infrared radiation; The outside of absorbing material support membrane is provided with some thermoelectric piles, and the some thermoelectric piles outside described absorbing material support membrane are electrically connected integral after being connected in series; One end of the contiguous absorbing material support membrane of thermoelectric pile correspondence forms detection hot junction, the corresponding one end away from absorbing material support membrane of thermoelectric pile forms detection cold junction, the detection hot junction of thermoelectric pile contacts with absorbing material support membrane, and the detection cold junction of thermoelectric pile is by dielectric support film and substrate contact; The thermoelectric pile arranged outside of mutual serial connection is used for the metal electrode exported by detecting voltage, and the detection cold junction of thermoelectric pile is positioned at above the outside of hot isolated chambers.
Described absorbing material support membrane and the nanofiber body be positioned on described absorbing material support membrane are corner collocation structure, and the top of substrate forms the thermoelectric pile of length different distributions by corner collocation structure.
Described nanofiber body adopts oxygen plasma bombardment photoresist to be formed.
Described photoresist is positive photoresist or negative photoresist, and described positive photoresist comprises RZJ photoresist, SPR photoresist, and negative photoresist comprises SU-8 photoresist.
Described thermoelectric pile comprises the first thermocouple bar and the second thermocouple bar with described first thermocouple bar corresponding matching, described first thermocouple bar and the second thermocouple bar correspondence form the one end in detection hot junction by the second metal contact wires electrical connection, first thermocouple bar and the second thermocouple bar correspondence form one end of detection cold junction by the first metal contact wires electrical connection, the thermoelectric pile outside absorbing material support membrane to be connected into one.
The material of described formation first thermocouple bar, the second thermocouple bar comprises Al-PolySi, Ti-PolySi or has the polysilicon of different doping type.
A preparation method for high-performance MEMS thermopile IR detector structure, the preparation method of described infrared detector structure comprises the steps:
A, provide substrate, and isolation channel masking layer is set on the upper surface of described substrate;
B, optionally shelter and etch described isolation channel masking layer, to form substrate etching window on described isolation channel masking layer; Utilize described substrate etching window etched substrate, to obtain isolation channel in substrate;
C, remove above-mentioned isolation channel masking layer, and dielectric support film is set on substrate, and described dielectric support film is filled in isolation channel, with the release barrier strip needed for being formed on substrate;
D, above-mentioned dielectric support film is arranged form the first thermocouple bar needed for thermoelectric pile and the second thermocouple bar;
E, thermocouple bar diaphragm is set on above-mentioned first thermocouple bar and the second thermocouple bar, and optionally shelters and etch thermocouple bar diaphragm, to form required metal contact hole on thermocouple bar diaphragm;
F, in above-mentioned metal contact hole splash-proofing sputtering metal layer, to form required metal electrode, the first metal contact wires and the second metal contact wires, second thermocouple bar of above-mentioned first thermocouple bar and correspondence is connected in series, to form some serial connection all-in-one-piece thermoelectric piles by the first metal contact wires, the second metal contact wires;
G, on above-mentioned dielectric support film, arrange absorbing material support membrane, described absorbing material support membrane is positioned on release barrier strip, and absorbing material support membrane and the first thermocouple bar and the second thermocouple bar contact detecting hot junction;
H, optionally shelter and etch absorbing material support membrane, to form dielectric support film etching window on absorbing material support membrane, utilize described dielectric support film etching window etch media support membrane, to form the corrosion release channel of through dielectric support film;
I, the nanofiber body that manufacture obtains for absorbing infrared radiation on above-mentioned absorbing material support membrane;
J, utilization corrosion release channel and nanofiber body etched substrate, utilize release barrier strip in substrate, form hot isolated chambers.
Described step I comprises the steps:
I1, on absorbing material support membrane, apply photoresist, and in described photoresist, form photoresist internal corrosion release channel, described photoresist internal corrosion release channel is connected with corrosion release channel;
I2, oxygen plasma bombardment is carried out to above-mentioned photoresist, to form nanofiber body.
In described step f, the material of splash-proofing sputtering metal layer comprises Al or Ti.
Described absorbing material support membrane adopts the composite bed of silicon nitride or silicon nitride and monox.
Advantage of the present invention: form hot isolated chambers by release barrier strip on substrate, absorbing material support membrane and nanofiber body are positioned at directly over hot isolated chambers, absorbing material support membrane contacts with the detection hot junction of thermoelectric pile, the detection cold junction of thermoelectric pile is by dielectric support film and substrate contact, utilize between detection hot junction and detection cold junction and there is the principle that temperature difference can produce electric potential difference, reach the object of infrared acquisition, nanofiber body is obtained by oxygen plasma bombardment photoetching offset plate figure, the preparation process of nanofiber body is convenient, the structure of MEMS thermopile IR detector is simply easy to realize, be convenient to single-chip integration, simultaneously the responsiveness of device and detectivity high, again can be mutually compatible with CMOS technology, applied widely, safe and reliable.
Accompanying drawing explanation
Fig. 1 ~ Figure 12 is the present invention's concrete implementing process step cut-open view, wherein:
Fig. 1 is the cut-open view after the present invention arranges isolation channel masking layer on substrate.
Fig. 2 is the cut-open view after the present invention obtains isolation channel in substrate.
Fig. 3 is that the present invention obtains the cut-open view after discharging barrier strip on substrate.
Fig. 4 is the cut-open view after the present invention arranges the first thermocouple bar and the second thermocouple bar on dielectric support film.
Fig. 5 is the cut-open view after the present invention obtains thermocouple bar diaphragm.
Fig. 6 is the cut-open view after the present invention obtains metal electrode, the first metal contact wires and the second metal contact wires.
Fig. 7 is that the present invention is absorbed the cut-open view after materials for support film.
Fig. 8 is that the present invention obtains the cut-open view after corroding release channel.
Fig. 9 is that the present invention applies photoresist and cut-open view after obtaining photoresist internal corrosion release channel.
Figure 10 is the cut-open view after the present invention obtains nanofiber body.
Figure 11 is the cut-open view after the present invention obtains hot isolated chambers.
Figure 12 is the vertical view of thermopile IR detector structure of the present invention.
Figure 13 is the ir-absorbance collection of illustrative plates of nanofiber body of the present invention.
Description of reference numerals: 101-substrate, 102-isolation channel masking layer, 201-substrate etching window, 202-isolation channel, 301-dielectric support film, 302-discharges barrier strip, 401-first thermocouple bar, 402-second thermocouple bar, 501-metal contact hole, end, 502-thermocouple bar hot junction, 503-thermocouple bar diaphragm, 601-metal electrode, 602-first metal contact wires, 603-second metal contact wires, 701-absorbing material support membrane, 702-absorbing material support membrane edge, 801-dielectric support film etching window, 802-corrodes release channel, 901-photoetching offset plate figure, 902-photoresist internal corrosion release channel, 1001-nanofiber body and the hot isolated chambers of 1101-.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As is illustrated by figs. 11 and 12: thermopile IR detector structure of the present invention comprises substrate 101; The upper surface of described substrate 101 arranges dielectric support film 301, and described dielectric support film 301 is jointly formed with the release baffle element in substrate 101 and discharges barrier strip 302, and the top in substrate 101 forms hot isolated chambers 1101 by release barrier strip 302; Be provided with absorbing material support membrane 701 directly over hot isolated chambers 1101, described absorbing material support membrane 701 is provided with the nanofiber body 1001 for absorbing infrared radiation; The outside of absorbing material support membrane 701 is provided with some thermoelectric piles, and the some thermoelectric piles outside described absorbing material support membrane 701 are electrically connected integral after being connected in series; One end of the contiguous absorbing material support membrane 701 of thermoelectric pile correspondence forms detection hot junction, the corresponding one end away from absorbing material support membrane 701 of thermoelectric pile forms detection cold junction, the detection hot junction of thermoelectric pile contacts with absorbing material support membrane 701, and the detection cold junction of thermoelectric pile is contacted with substrate 101 by dielectric support film 301; The thermoelectric pile arranged outside of mutual serial connection is used for the metal electrode 601 exported by detecting voltage, and the detection cold junction of thermoelectric pile is positioned at above the outside of hot isolated chambers 1101.
Particularly, described absorbing material support membrane 701 and the nanofiber body 1001 be positioned on described absorbing material support membrane 701 are corner collocation structure, the top of substrate 101 forms the thermoelectric pile of length different distributions by corner collocation structure, when the present invention specifically implements, the corner collocation structure of absorbing material support membrane 701 and nanofiber body 1001 is all in square, accounted for the large percentage of the device total area by collocation structure Neng Shi infrared absorption district, described corner, the logarithm that in thermoelectric pile, thermocouple bar is right is simultaneously also maximum.
Described nanofiber body 1001 adopts oxygen plasma to bombard photoresist 901 and is formed.Described photoresist 901 is positive photoresist or negative photoresist, and described positive photoresist comprises RZJ photoresist, SPR photoresist, AZ photoresist, and negative photoresist comprises SU-8 photoresist.Described nanofiber body 1001 is distributed in absorbing material support membrane 701 surface, and the edge of nanofiber body 1001 compared with the edge of absorbing material support membrane 701 to inside contracting several micron, and inside because of photoresist internal corrosion release channel 902 with corrosion release channel 802 be connected, for the release channel corrosion of substrate 101 being obtained to hot isolated chambers 1101, by hot isolated chambers 1101 for the infrared radiation that absorbs nanofiber body 1001 and external isolation, to improve the detection accuracy of infrared detector structure.Nanofiber body 1001 reaches 60% ~ 95% to the absorptivity of infrared radiation within the scope of 4 ~ 18 mum wavelengths, as shown in figure 13.
Described thermoelectric pile comprises the first thermocouple bar 401 and the second thermocouple bar 402 with described first thermocouple bar 401 corresponding matching, one end that described first thermocouple bar 401 and the second thermocouple bar 402 correspondence form detection hot junction is electrically connected by the second metal contact wires 603, one end that first thermocouple bar 401 and the second thermocouple bar 402 correspondence form detection cold junction is electrically connected by the first metal contact wires 602, the thermoelectric pile outside absorbing material support membrane 701 to be connected into one.
As shown in Fig. 1 ~ Figure 12: the MEMS thermopile IR detector structure of said structure can be prepared by following processing step, and particularly, described preparation method comprises the steps:
A, provide substrate 101, and isolation channel masking layer 102 is set at the upper surface of described substrate 101;
As shown in Figure 1: grow SiO on the surface of substrate 101 by the mode of dry-oxygen oxidation
2material layer, to form isolation channel masking layer 102, the thickness of isolation channel masking layer 102 is 5000, and during dry-oxygen oxidation, temperature is 950 DEG C, and the content of oxygen is 60%; Described substrate 101 adopts conventional material, and the material of substrate 101 comprises silicon.
B, optionally shelter and etch described isolation channel masking layer 102, to form substrate etching window 201 on described isolation channel masking layer 102; Utilize described substrate etching window 201 etched substrate 101, to obtain isolation channel 202 in substrate 101;
As shown in Figure 2, at the surperficial spin coating photoresist of isolation channel masking layer 102, and form closing openings on a photoresist by photoetching process, utilize reactive ion etching (RIE) SiO subsequently
2method by the Graphic transitions of closing openings on photoresist on isolation channel masking layer 102, form the closing openings figure that is positioned on isolation channel masking layer 102, i.e. substrate etching window 201; Oxygen plasma dry method is utilized to remove photoresist to remove photoresist with sulfuric acid/hydrogen peroxide wet method the method combined to remove the photoresist on isolation channel masking layer 102 surface; Adopt RIE technology anisotropic etching substrate 101, by the closing openings Graphic transitions on isolation channel masking layer 102 on substrate 101, form the closing openings figure on substrate 101, i.e. isolation channel 202, the width of the isolation channel 202 formed is 1.6 μm, and the degree of depth reaches 35 μm.Wherein, the RF power of RIE isolation channel masking layer 102 is 300 W, and chamber pressure is 200 mTorr, and etching gas is CF
4, CHF
3, He mixed gas, corresponding flow is 10/50/12 sccm(standard-state cubic centimeter per minute); The etching gas adopted during RIE substrate 101 is Cl
2with the mixed gas of He, its flow is respectively 180 and 400 sccm, and RF power is 350 W, and chamber pressure is 400 mTorr.
C, remove above-mentioned isolation channel masking layer 102, and dielectric support film 301 is set on the substrate 101, and described dielectric support film 301 is filled in isolation channel 202, to form required release barrier strip 302 on the substrate 101;
As shown in Figure 3, RIE technology is adopted to remove isolation channel masking layer 102 completely; On the substrate 101 forming isolation channel 202, by low-pressure chemical vapor deposition (LPCVD) deposition techniques somatomedin support membrane 301, the material of described dielectric support film 301 is SiO
2, the thickness of dielectric support film 301 is 8000, completely fill isolation channel 202, and with completely fills SiO
2isolation channel 202 jointly form SiO
2release barrier strip 302.Wherein, adopt TEOS((Tetraethyl Orthosilicate during LPCVD technology growth dielectric support film 301, ethyl orthosilicate)) source, the temperature in TEOS source is 50 DEG C, and furnace tube temperature is 720 DEG C, and pressure is 300mTorr, and oxygen flow is 200sccm.
D, above-mentioned dielectric support film 301 is arranged form the first thermocouple bar 401 and the second thermocouple bar 402 needed for thermoelectric pile;
As shown in Figure 4, by LPCVD technology growth structural sheet on the substrate 101 obtaining dielectric support film 301 and release barrier strip 302, for the formation of the first thermocouple bar 401 and the second thermocouple bar 402; The material of structural sheet can adopt compatible mutually with microelectronic technique and have the material of Seebeck effect, comprises Al-PolySi(Al-polysilicon), Ti-PolySi(Ti-polysilicon) or the polysilicon of different doping type.Adopt the polysilicon with different doping type in the present embodiment, the thickness of structural sheet is 2000;
At the surperficial spin coating photoresist of structural sheet, and corresponded to the position making photoresist opening figure of the first thermocouple bar 401 on a photoresist by photoetching process, and carry out the doping of P type to it, doping content is 5e22cm
-3, implant energy is 30KeV; Oxygen plasma dry method is utilized to remove photoresist to remove photoresist with sulfuric acid/hydrogen peroxide wet method the method combined to remove the photoresist on structural sheet surface; Again at structural sheet surface spin coating photoresist, and corresponded to the opening figure of the position formation photoresist of the second thermocouple bar 402 on a photoresist by photoetching process, and carry out N-type doping to it, doping content is 4e19cm
-3, implant energy is 80KeV, utilizes oxygen plasma dry method to remove photoresist to remove photoresist with sulfuric acid/hydrogen peroxide wet method the method combined to remove the photoresist on structural sheet surface;
At the surface third time spin coating photoresist of structural sheet, and the position formation photoetching offset plate figure of the first thermocouple bar 401 and the second thermocouple bar 402 is corresponded on a photoresist by photoetching process, adopt the material polysilicon of RIE technology anisotropic etching structural sheet, form the first thermocouple bar 401 and the second thermocouple bar 402.The width of described first thermocouple bar 401 and the second thermocouple bar 402 is 5 μm, and length is isolation channel 202 to the distance at absorbing material support membrane 701 edge and the length sum be positioned at outside isolation channel 202.Wherein, during LPCVD technology growth structural sheet polysilicon, work boiler tube is 620 DEG C, and pressure is 200 mTorr, SiH
4flow be 130 sccm; The etching gas adopted during RIE structural sheet polysilicon is Cl
2with the mixed gas of He, its flow is respectively 180 and 400 sccm, and RF power is 350 W, and chamber pressure is 400 mTorr.
E, thermocouple bar diaphragm 503 is set on above-mentioned first thermocouple bar 401 and the second thermocouple bar 402, and optionally shelters and etch thermocouple bar diaphragm 503, to form required metal contact hole 501 on thermocouple bar diaphragm 503;
As shown in Figure 5, by LPCVD technology growth thermocouple bar diaphragm 503 on the above-mentioned substrate surface being provided with the first thermocouple bar 401 and the second thermocouple bar 402, the material of described thermocouple bar diaphragm 503 is SiO
2, thickness is 4000; At the surperficial spin coating photoresist of described thermocouple bar diaphragm 503; and correspond to thermoelectric pile position (not comprising end, thermocouple bar hot junction 502) formation photoetching offset plate figure on a photoresist by photoetching process; the position simultaneously corresponding to metal contact hole 501 in described photoetching offset plate figure forms opening, utilizes RIE SiO
2photoetching offset plate figure is transferred to SiO by technology
2on layer, form the figure of thermocouple bar diaphragm 503, form metal contact hole 501 simultaneously; Oxygen plasma dry method is finally utilized to remove photoresist to remove photoresist with sulfuric acid/hydrogen peroxide wet method the method combined to remove photoresist above substrate 101.
F, in above-mentioned metal contact hole 501 splash-proofing sputtering metal layer, to form required metal electrode 601, first metal contact wires 602 and the second metal contact wires 603, second thermocouple bar 402 of above-mentioned first thermocouple bar 401 and correspondence is connected in series by the first metal contact wires 602, second metal contact wires 603, to form some serial connection all-in-one-piece thermoelectric piles;
As shown in Figure 6, the substrate having made metal contact hole 501 sputters Al metal level, and make Al metal level at the location graphic of metal electrode 601, first metal contact wires 602 and the second metal contact wires 603 by photoetching process, form metal electrode 601, first metal contact wires 602 and the second metal contact wires 603; The method of organic washing is adopted to remove photoresist above substrate 101 subsequently.Wherein, the method for the graphical employing Al corrosive liquid wet etching of Al metal realizes, phosphoric acid (concentration is 60% ~ 80%) in Al corrosive liquid: acetic acid (concentration is 0.1%): nitric acid (concentration is 0.5%): the ratio of water is 16:1:1:2.When the present invention specifically implements, the material of metal level also can be Ti, and the metal electrode 601 of formation is for exporting the voltage of whole thermoelectric pile.
G, on above-mentioned dielectric support film 301, arrange absorbing material support membrane 701, described absorbing material support membrane 701 is positioned on release barrier strip 302, and absorbing material support membrane 701 and the first thermocouple bar 401 and the second thermocouple bar 402 contact detecting hot junction;
As shown in Figure 7, the dielectric support film 301 having made metal electrode 601, first metal contact wires 602 and the second metal contact wires 603 arranges absorbing material support membrane 701, and described absorbing material support membrane 701 adopts Si
3n
4and SiO
2composite material film, all grown by PECVD method, wherein Si
3n
4the thickness of film is 6000, SiO
2the thickness of film is 2000.By photoetching and RIE SiO
2/ Si
3n
4technology realizes the graphical of composite material film; make it the shape in square four convex corner compensations and cover the end, thermocouple bar hot junction 502 do not covered by thermocouple bar diaphragm 503 completely; namely the absorbing material support membrane edge 702 of absorbing material support membrane 701 covers on thermocouple bar hot junction, contacts with the detection hot junction of the first thermocouple bar 401 and the second thermocouple bar 402 to make absorbing material support membrane 701.Wherein, PECVD Si
3n
4furnace tube temperature be 270 DEG C, RF power is 97W, and gas condition is SIH
4: 4.6% NO:0.2.
H, optionally shelter and etch absorbing material support membrane 701, to form dielectric support film etching window 801 on absorbing material support membrane 701, utilize described dielectric support film etching window 801 etch media support membrane 301, to form the corrosion release channel 802 of through dielectric support film 301;
As shown in Figure 8; be provided with spin coating photoresist above the substrate 101 of absorbing material support membrane 701; and adopt photoetching technique to realize the graphical of photoresist; make it inner at absorbing material support membrane 701 and thermopair between gap make the opening figure of photoresist; RIE technology is utilized the opening figure on photoresist to be transferred on absorbing material support membrane 701 and thermocouple bar diaphragm 503; form dielectric support film etching window 801, again utilize RIE SiO
2method etched by dielectric support film etching window 801 pairs of dielectric support films 301, final form corrosion release channel 802.Finally, the method for organic washing is adopted to remove the photoresist of substrate surface.
I, the nanofiber body 1001 that manufacture obtains for absorbing infrared radiation on above-mentioned absorbing material support membrane 701;
In the embodiment of the present invention, the technique that absorbing material support membrane 701 is prepared nanofiber body 1001 comprises the steps:
I1, on absorbing material support membrane 701, apply photoresist, and in described photoresist, form photoresist internal corrosion release channel 902, and then form photoetching offset plate figure 901, described photoresist internal corrosion release channel 902 with corrode release channel 802 and be connected;
As shown in Figure 9, spin coating photoresist above the above-mentioned substrate 101 having defined corrosion release channel 802, described photoresist can be positive photoresist, comprise RZJ sequence of photolithography glue, SPR sequence of photolithography glue, AZ sequence of photolithography glue, also can be negative photoresist, comprise SU-8 sequence of photolithography glue.In the present embodiment, have employed SU-8 3010, be under the condition of 3000 revs/min at rotating speed, the thickness obtaining SU-8 is 10 microns, adopt photoetching technique realize the graphical of photoresist, make it correspond to absorbing material support membrane 701 to form the figure of photoresist in the area of inner several microns, simultaneously, the position corresponding to corrosion release channel 802 in the figure of photoresist forms photoresist internal corrosion release channel 902, and then obtains photoetching offset plate figure 901; In the embodiment of the present invention, the axis of described photoresist internal corrosion release channel 902 is positioned on unified straight line with the axis of corrosion release channel 802.
I2, oxygen plasma bombardment is carried out, to form nanofiber body 1001 to above-mentioned photoetching offset plate figure 901.
As shown in Figure 10, the described substrate 101 having achieved photoetching offset plate figure 901 on absorbing material support membrane 701 is positioned in plasma machine, carries out the oxygen plasma bombardment of 30 minutes, until described photoetching offset plate figure 901 forms nanofiber body 1001.Wherein, in the process of oxygen plasma bombardment, RF power is 300 W, and the flow of oxygen is 200 sccm, and chamber pressure is 5 Pa.Described photoetching offset plate figure 901 has nanometer fibrous nanofiber body 1001 by what formed after oxygen plasma bombardment, and described nanofiber body 1001 has higher infrared absorption efficiency.
J, utilization corrosion release channel 802 and nanofiber body 1001 etched substrate 101, utilize release barrier strip 302 to form hot isolated chambers 1101 in substrate 101.
As shown in figure 11, the material due to substrate 101 is silicon, adopts XeF
2substrate 101 in dry etching technology isotropic etch device architecture, by corrosion release channel 802 and photoresist internal corrosion release channel 902 corrosion substrate 101 downwards, discharging under barrier strip 302 effect and then forming hot isolated chambers 1101, obtain the general structure of infrared eye simultaneously.In the embodiment of the present invention, the degree of depth of hot isolated chambers 1101 in substrate 101 is less than or close to the degree of depth of isolation channel 202 in substrate 101.
As shown in Fig. 1 ~ Figure 13: during work, infrared radiation is absorbed by nanofiber body 1001, the infrared radiation that nanofiber body 1001 absorbs is converted to heat and conducts to absorbing material support membrane 701, the heat of absorbing material support membrane 701 is conducted to detection cold junction by the detection hot junction of thermoelectric pile, due to thermoelectric pile detection hot junction and detection cold junction between there is temperature difference, therefore, according to the Seebeck effect of thermoelectric pile, electric potential difference is produced between the metal electrode 601 of detector, voltage can be exported by metal electrode 601, to reach the object to infrared acquisition.
The present invention forms hot isolated chambers 1101 by release barrier strip 302 on the substrate 101, absorbing material support membrane 701 and nanofiber body 1001 are positioned at directly over hot isolated chambers 1101, absorbing material support membrane 701 contacts with the detection hot junction of thermoelectric pile, the detection cold junction of thermoelectric pile is contacted with substrate 101 by dielectric support film 301, utilize between detection hot junction and detection cold junction and there is the principle that temperature difference can produce electric potential difference, reach the object of infrared acquisition, nanofiber body 1001 is obtained by oxygen plasma bombardment photoetching offset plate figure 901, the preparation process of nanofiber body 1001 is convenient, the structure of MEMS thermopile IR detector is simply easy to realize, be convenient to single-chip integration, simultaneously the responsiveness of device and detectivity high, again can be mutually compatible with CMOS technology, applied widely, safe and reliable.
Claims (10)
1. a high-performance MEMS thermopile IR detector structure, comprises substrate (101); It is characterized in that: the upper surface of described substrate (101) arranges dielectric support film (301), described dielectric support film (301) is jointly formed with the release baffle element in substrate (101) and discharges barrier strip (302), and the top in substrate (101) forms hot isolated chambers (1101) by release barrier strip (302); Be provided with absorbing material support membrane (701) directly over hot isolated chambers (1101), described absorbing material support membrane (701) is provided with the nanofiber body (1001) for absorbing infrared radiation; The outside of absorbing material support membrane (701) is provided with some thermoelectric piles, and after some thermoelectric pile serial connections in described absorbing material support membrane (701) outside, electrical connection is integral; One end of contiguous absorbing material support membrane (701) of thermoelectric pile correspondence forms detection hot junction, the corresponding one end away from absorbing material support membrane (701) of thermoelectric pile forms detection cold junction, the detection hot junction of thermoelectric pile contacts with absorbing material support membrane (701), and the detection cold junction of thermoelectric pile is contacted with substrate (101) by dielectric support film (301); The thermoelectric pile arranged outside of mutual serial connection is used for the metal electrode (601) exported by detecting voltage, and the detection cold junction of thermoelectric pile is positioned at above the outside of hot isolated chambers (1101).
2. high-performance MEMS thermopile IR detector structure according to claim 1, it is characterized in that: described absorbing material support membrane (701) and the nanofiber body (1001) that is positioned on described absorbing material support membrane (701) are in corner collocation structure, and the top of substrate (101) forms the thermoelectric pile of length different distributions by corner collocation structure.
3. high-performance MEMS thermopile IR detector structure according to claim 1, is characterized in that: described nanofiber body (1001) adopts oxygen plasma bombardment photoresist to be formed.
4. high-performance MEMS thermopile IR detector structure according to claim 3, it is characterized in that: described photoresist is positive photoresist or negative photoresist, described positive photoresist comprises RZJ photoresist, SPR photoresist, AZ photoresist, and negative photoresist comprises SU-8 photoresist.
5. high-performance MEMS thermopile IR detector structure according to claim 1, it is characterized in that: described thermoelectric pile comprises the first thermocouple bar (401) and the second thermocouple bar (402) with described first thermocouple bar (401) corresponding matching, described first thermocouple bar (401) and the second thermocouple bar (402) correspondence form the one end in detection hot junction by the second metal contact wires (603) electrical connection, first thermocouple bar (401) and the second thermocouple bar (402) correspondence form one end of detection cold junction by the first metal contact wires (602) electrical connection, so that the thermoelectric pile in absorbing material support membrane (701) outside is connected into one.
6. high-performance MEMS thermopile IR detector structure according to claim 5, is characterized in that: form described first thermocouple bar (401), the material of described second thermocouple bar (402) comprises Al-PolySi, Ti-PolySi or have the polysilicon of different doping type.
7. a preparation method for high-performance MEMS thermopile IR detector structure, is characterized in that, the preparation method of described infrared detector structure comprises the steps:
(a), substrate (101) is provided, and isolation channel masking layer (102) is set at the upper surface of described substrate (101);
(b), optionally shelter and etch described isolation channel masking layer (102), to form substrate etching window (201) on described isolation channel masking layer (102); Utilize described substrate etching window (201) etched substrate (101), to obtain isolation channel (202) in substrate (101);
(c), remove above-mentioned isolation channel masking layer (102), and dielectric support film (301) is set at substrate (101), and described dielectric support film (301) is filled in isolation channel (202), with the release barrier strip (302) needed for the upper formation of substrate (101);
(d), arrange on above-mentioned dielectric support film (301) and form the first thermocouple bar (401) needed for thermoelectric pile and the second thermocouple bar (402);
(e), on above-mentioned first thermocouple bar (401) and the second thermocouple bar (402), thermocouple bar diaphragm (503) is set, and optionally shelter and etch thermocouple bar diaphragm (503), with the metal contact hole (501) needed for the upper formation of thermocouple bar diaphragm (503);
(f), in above-mentioned metal contact hole (501) splash-proofing sputtering metal layer, to form required metal electrode (601), the first metal contact wires (602) and the second metal contact wires (603), second thermocouple bar (402) of above-mentioned first thermocouple bar (401) and correspondence is connected in series, to form some serial connection all-in-one-piece thermoelectric piles by the first metal contact wires (602), the second metal contact wires (603);
(g), on above-mentioned dielectric support film (301), absorbing material support membrane (701) is set, described absorbing material support membrane (701) is positioned in release barrier strip (302), and absorbing material support membrane (701) and the first thermocouple bar (401) and the second thermocouple bar (402) contact detecting hot junction;
(h), optionally shelter and etch absorbing material support membrane (701), above to form dielectric support film etching window (801) at absorbing material support membrane (701), utilize described dielectric support film etching window (801) etch media support membrane (301), to form the corrosion release channel (802) of through dielectric support film (301);
(i) the nanofiber body (1001) obtained for absorbing infrared radiation, is above manufactured above-mentioned absorbing material support membrane (701);
J (), utilization corrosion release channel (802) and nanofiber body (1001) etched substrate (101), utilize release barrier strip (302) to form hot isolated chambers (1101) in substrate (101).
8. the preparation method of high-performance MEMS thermopile IR detector structure according to claim 7, it is characterized in that, described step (i) comprises the steps:
(i1), on absorbing material support membrane (701), photoresist is applied, and in described photoresist, form photoresist internal corrosion release channel (902), and then forming photoetching offset plate figure (901), described photoresist internal corrosion release channel (902) is connected with corrosion release channel (802);
(i2), to above-mentioned photoetching offset plate figure (901) oxygen plasma bombardment is carried out, to form nanofiber body (1001).
9. the preparation method of high-performance MEMS thermopile IR detector structure according to claim 7, it is characterized in that: in described step (f), the material of splash-proofing sputtering metal layer comprises Al or Ti.
10. the preparation method of high-performance MEMS thermopile IR detector structure according to claim 7, is characterized in that: described absorbing material support membrane (701) adopts the composite bed of silicon nitride or silicon nitride and monox.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310067012.1A CN103207021B (en) | 2013-03-01 | 2013-03-01 | High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310067012.1A CN103207021B (en) | 2013-03-01 | 2013-03-01 | High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103207021A CN103207021A (en) | 2013-07-17 |
| CN103207021B true CN103207021B (en) | 2015-02-11 |
Family
ID=48754315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310067012.1A Active CN103207021B (en) | 2013-03-01 | 2013-03-01 | High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103207021B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106017696B (en) * | 2016-07-13 | 2019-06-21 | 上海交通大学 | Thermal resistance thin film thermoelectric heap-type transient heat flow meter and preparation method |
| CN111470469B (en) * | 2020-04-15 | 2023-09-01 | 江苏创芯海微科技有限公司 | MEMS thermopile infrared detector and preparation method thereof |
| CN112117369B (en) * | 2020-06-30 | 2022-12-02 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing thermopile sensor |
| CN112117374A (en) * | 2020-06-30 | 2020-12-22 | 中芯集成电路（宁波）有限公司上海分公司 | Method for manufacturing thermopile sensor |
| CN111924796A (en) * | 2020-07-13 | 2020-11-13 | 无锡物联网创新中心有限公司 | Preparation method of MEMS thermopile infrared detector |
| CN111896121A (en) * | 2020-07-13 | 2020-11-06 | 无锡物联网创新中心有限公司 | MEMS thermopile infrared detector |
| CN112537754B (en) * | 2020-12-08 | 2021-10-22 | 江苏创芯海微科技有限公司 | Electrical isolation structure and preparation method thereof |
| CN113104805A (en) * | 2021-04-12 | 2021-07-13 | 上海芯物科技有限公司 | Infrared thermopile sensor, chip and preparation method thereof |
| CN114199383B (en) * | 2021-11-24 | 2023-11-14 | 华中科技大学 | Thermopile narrowband detector based on plasmon composite microcavity and preparation method thereof |
| CN117500356B (en) * | 2024-01-03 | 2024-03-26 | 无锡芯感智半导体有限公司 | Gas sensor chip integrated with MEMS-CMOS and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798474A (en) * | 2012-08-23 | 2012-11-28 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
| CN102829880A (en) * | 2012-08-23 | 2012-12-19 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102128685A (en) * | 2010-11-22 | 2011-07-20 | 烟台睿创微纳技术有限公司 | Micro-mechanical CMOS (complementary metal oxide semiconductor) thermopile infrared temperature sensor |
-
2013
- 2013-03-01 CN CN201310067012.1A patent/CN103207021B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798474A (en) * | 2012-08-23 | 2012-11-28 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector structure and preparation method thereof |
| CN102829880A (en) * | 2012-08-23 | 2012-12-19 | 江苏物联网研究发展中心 | High-performance MEMS (Micro Electro Mechanical System) thermopile infrared detector based on black silicon and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103207021A (en) | 2013-07-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103207021B (en) | High-performance micro-electromechanical system (MEMS) thermopile infrared detector structure and manufacturing method thereof | |
| US9117949B2 (en) | Structure and fabrication method of a high performance MEMS thermopile IR detector | |
| US9222837B2 (en) | Black silicon-based high-performance MEMS thermopile IR detector and fabrication method | |
| CN103245421B (en) | Pyrogenicity type MEMS (micro-electro-mechanical system) thermopile infrared detector structure and manufacturing method thereof | |
| CN101714591B (en) | Method for manufacturing silicon photoelectric diode | |
| WO2016095600A1 (en) | Three-dimensional temperature detector and manufacturing method thereof | |
| CN101561319B (en) | Capacitive MEMS non-refrigerated infrared detector and preparation method thereof | |
| US20180090657A1 (en) | Packaging Method and Semiconductor Device | |
| CN102384790B (en) | Thermopile infrared sensor and manufacturing method thereof | |
| CN103400887B (en) | A kind of preparation method of back-illuminated type Si-PIN photodetector | |
| US20220059589A1 (en) | Wide Spectrum Multi-band Detection Structure with Selective Absorption Enhancement and Preparation Method Thereof | |
| CN210926061U (en) | Thermopile infrared detector | |
| EP3522217B1 (en) | Method to prepare pixel for uncooled infrared focal plane detector | |
| CN106276773A (en) | MEMS infrared light source with suspension structure and preparation method thereof | |
| CN105552131A (en) | Novel high-performance light modulation thin film transistor based on quantum dot doped gate insulating layer | |
| CN110118604B (en) | Wide-spectrum microbolometer based on mixed resonance mode and preparation method thereof | |
| CN105576070A (en) | Cavity formation method, thermopile infrared detector and manufacturing method | |
| CN104501983B (en) | Folded film temperature sensor and manufacturing method thereof | |
| CN112802956B (en) | MEMS thermopile infrared detector and manufacturing method thereof | |
| CN203551501U (en) | High-sensitivity gas sensor based on micro-channel plate three-dimensional structure | |
| CN110627014A (en) | Method for manufacturing suspended infrared thermopile on substrate | |
| CN111964794B (en) | High absorption nano-structure thermopile and manufacturing method thereof | |
| CN103145094A (en) | Micro machining method for bulk silicon for forming cavity structure of MEMS (micro-electromechanical systems) thermopile detector | |
| CN108231923B (en) | A kind of infrared detector and preparation method thereof | |
| CN205211778U (en) | Thermopile infrared detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201019 Address after: Room 120, 1 / F, unit 9, building 25, No. 1, Shangdi 4th Street, Haidian District, Beijing 100085 Patentee after: Beijing Zhongke Micro Intellectual Property Service Co.,Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park building C Patentee before: JIANGSU R&D CENTER FOR INTERNET OF THINGS |
|
| TR01 | Transfer of patent right |