CN101538006B - Method for preparing optical modulation thermal imaging focal plane array - Google Patents
Method for preparing optical modulation thermal imaging focal plane array Download PDFInfo
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- CN101538006B CN101538006B CN2009103018222A CN200910301822A CN101538006B CN 101538006 B CN101538006 B CN 101538006B CN 2009103018222 A CN2009103018222 A CN 2009103018222A CN 200910301822 A CN200910301822 A CN 200910301822A CN 101538006 B CN101538006 B CN 101538006B
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- focal plane
- thermal imaging
- optical modulation
- plane array
- imaging focal
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- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 238000001931 thermography Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
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- 238000005516 engineering process Methods 0.000 claims description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 7
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- 239000000377 silicon dioxide Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
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- 239000002245 particle Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
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- 238000009279 wet oxidation reaction Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 125000001246 bromo group Chemical group Br* 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
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- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
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- 238000005057 refrigeration Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
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Priority Applications (1)
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CN2009103018222A CN101538006B (en) | 2009-04-24 | 2009-04-24 | Method for preparing optical modulation thermal imaging focal plane array |
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CN2009103018222A CN101538006B (en) | 2009-04-24 | 2009-04-24 | Method for preparing optical modulation thermal imaging focal plane array |
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CN101538006A CN101538006A (en) | 2009-09-23 |
CN101538006B true CN101538006B (en) | 2011-04-20 |
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CN2009103018222A Active CN101538006B (en) | 2009-04-24 | 2009-04-24 | Method for preparing optical modulation thermal imaging focal plane array |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101538005B (en) * | 2009-03-17 | 2011-04-20 | 中国科学院微电子研究所 | Manufacture method for optical modulation thermal imaging focal plane array |
CN102408091B (en) * | 2011-10-10 | 2015-04-15 | 无锡微奥科技有限公司 | Improved wafer level package structure of micro-electro-mechanical system platform |
CN104528630A (en) * | 2014-12-16 | 2015-04-22 | 复旦大学 | Method for preparing infrared source modification layer |
CN105890767A (en) * | 2015-01-23 | 2016-08-24 | 北京大学 | Supporting beam type infrared focal plane array and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1807221A (en) * | 2005-12-29 | 2006-07-26 | 中国科学院上海微系统与信息技术研究所 | Anchor production method in xenon difluoride gas corrosion process |
CN1911781A (en) * | 2005-08-11 | 2007-02-14 | 中国科学院微电子研究所 | Manufacturing method used for improving performance of non-refrigerating infrared focal plane array device |
CN101538005A (en) * | 2009-03-17 | 2009-09-23 | 中国科学院微电子研究所 | Manufacture method for optical modulation thermal imaging focal plane array |
-
2009
- 2009-04-24 CN CN2009103018222A patent/CN101538006B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1911781A (en) * | 2005-08-11 | 2007-02-14 | 中国科学院微电子研究所 | Manufacturing method used for improving performance of non-refrigerating infrared focal plane array device |
CN1807221A (en) * | 2005-12-29 | 2006-07-26 | 中国科学院上海微系统与信息技术研究所 | Anchor production method in xenon difluoride gas corrosion process |
CN101538005A (en) * | 2009-03-17 | 2009-09-23 | 中国科学院微电子研究所 | Manufacture method for optical modulation thermal imaging focal plane array |
Non-Patent Citations (2)
Title |
---|
何伟等.非制冷红外焦平面阵列进展.《电子工业专用设备》.2008, * |
李超波等.基于MEMS 技术的红外成像焦平面阵列.《半导体学报》.2006, * |
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Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Institute of Microelectronics Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Effective date of registration: 20161206 Address after: 214000 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee after: ZHONGKE WEIZHI INTELLIGENT MANUFACTURING TECHNOLOGY JIANGSU CO.,LTD. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
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Address after: 214000 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee after: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. Address before: 214000 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee before: ZHONGKE WEIZHI INTELLIGENT MANUFACTURING TECHNOLOGY JIANGSU Co.,Ltd. |
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Address after: 214105 No. 299 Dacheng Road, Xishan District, Jiangsu, Wuxi Patentee after: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. Address before: 214000 Jiangsu province Wuxi City Linghu New District Road No. 200 Wu China Sensor Network International Innovation Park C1 Building 9 floor Patentee before: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. |
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Address after: No. 979, Antai Third Road, Xishan District, Wuxi City, Jiangsu Province, 214000 Patentee after: Zhongke Weizhi Technology Co.,Ltd. Address before: No. 299, Dacheng Road, Xishan District, Wuxi City, Jiangsu Province Patentee before: Zhongke Weizhi intelligent manufacturing technology Jiangsu Co.,Ltd. |