CN1807221A - Anchor production method in xenon difluoride gas corrosion process - Google Patents
Anchor production method in xenon difluoride gas corrosion process Download PDFInfo
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Abstract
The invention relates a method for making anchor used in the XeF2 corrosion course, comprising the following steps: making the SiO2, SiNx, SiC, Au, Al, and Cr materials which are not eroded by XeF2 deposit around the anchor, and forming the needed anchor; or using the material which is not eroded by XeF2 to make the anchor. The anchor has five structures: the anchor is composed by silicon material and protective layer material around anchor; the anchor is composed by silicon material and protective layer material and packed layer material; the anchor is composed by protective layer material and packed layer material; the anchor is the barrel composed by protective layer material; the anchor is the film composed by protective layer material. The five anchor structures relates six technologies. The method has the advantages of accurate controlling the anchor position, improving the product of silicon chip unit devices, reducing the cost, improving the dutycycle of array component and modifying the device property.
Description
Technical field
The present invention relates to a kind of xenon difluoride gas (XeF
2) preparation method of anchor (anchor) in the corrosion process, belong to the microelectromechanical systems field.
Background technology
Air pressure is the XeF of several millibars (millibar)
2Gas has good isotropic etching characteristic to silicon, and corrosion rate is higher, simultaneously to other micromechanics material much commonly used, as SiO
2, materials such as SiNx, SiC, Au, Al, Cr and photoresist corrode hardly, have high selectivity, utilize this characteristics, in silicon micro mechanical technology, people adopt silicon as sacrifice layer usually, and adopt Al, SiO
2, material such as SiNx is as microstructured layers, adopts XeF at last
2Gas attack silicon discharges micro-structural (P.B.chu, et al.Controlled pulse-etching with xenon difluoride, 1997international conference on solid-state sensors and actuators, Chicago, June16-19,1997:665-668.Joon-Shik Park, et al.Fabrication and properties of PZT microcantilevers using isotropic silicon dry etching process by XeF2 gas for releaseprocess, Sensors and Actuators A 117 (2005): 1-7).The advantage of this process is: adopt silicon to make sacrifice layer, thickness without limits, promptly micro-structural can be far away apart from substrate; Because XeF
2Be the gaseous corrosion agent, the adhesion of having avoided wet etching to discharge may occurring in the micro-structural process even the surface tension of water are destroyed the phenomenon of micro-structural; For deep reaction ion etching (DRIE), reactive ion etching dry etching devices such as (RIE), XeF
2It is simple that gas has a corrosion device, corrosion efficient height, the advantage that price is lower.
Yet; when people adopt this process to make micro mechanical device at present; normally not corrode the anchor of most silicon as micro-structural; do not consider special protection (Joon-Shik Park, et al.Fabrication andproperties of PZT micro cantilevers using isotropic silicon dry etching process byXeF in the technical process to anchor
2Gas for release process, Sensors and Actuators A 117 (2005): 1-7), because XeF
2Gas is isotropic to the corrosion of silicon, will inevitably reduce the device count that can make on the single silicon chip like this, and in addition, this process can not be applicable to the device (as array device) that dutycycle is had relatively high expectations.
At the problems referred to above, the present invention proposes a kind of XeF
2The preparation method of anchor in the gas attack process.
Summary of the invention
The objective of the invention is to propose a kind of XeF
2The preparation method of anchor in the gas attack process on the one hand, can increase the output of single silicon chip unit component, reduces production costs; On the other hand, improve the dutycycle of array device (as infrared focal plane array device), improve device performance.
The object of the present invention is achieved like this: based on XeF
2The material selectivity that is had during gas attack is with SiO
2, XeF such as SiNx, SiC, Au, Al and Cr
2The almost incorrosive deposition of materials of gas forms needed anchor around the anchor that will protect; Perhaps directly adopt XeF
2The almost incorrosive material of gas is made anchor.
Above-mentioned purpose can be made by following technology and be realized: adopt deep reaction ion etching (DRIE) or technology such as potassium hydroxide (KOH) or TMAH (TMAH) anisotropic etch etching/erode away a deep trouth, deposit XeF in deep trouth then around the anchor that will protect
2The almost incorrosive material of gas protects anchor; Perhaps adopt technology etchings such as deep reaction ion etching (DRIE) or KOH (or TMAH) corrosion/erode away a darker pit, by deposit XeF in pit
2The almost incorrosive material of gas forms required anchor.
A simple micro mechanical device structure generally includes three parts: substrate, anchor and micro-structural (being generally little beam, microbridge or mems thin film) are connected by anchor between micro-structural and the substrate.A kind of anchor structure be by silicon materials and cover around it almost can not be by XeF
2The protective layer material of gas attack is (as SiO
2Film) constitutes.Protective layer and micro-structural can adopt identical materials, and in practical devices manufacturing process, they also can adopt different materials.
Second kind of anchor structure also has the packing material between two-layer protective layer except by protective layer material and the silicon materials, and it mainly acts on is the slit of filling up between the protective layer.
The third anchor structure is made of protective layer material and packing material.
The common feature of three kinds of anchors of above-mentioned micro mechanical structure is: can not be by XeF by cover one deck around anchor
2The protective layer material of gas attack is protected anchor, and the mechanical strength of this anchor is bigger.
In addition, also can adopt XeF
2The almost incorrosive material of gas is made anchor.A kind of anchor structure be one adopt that micro-processing method makes by XeF
2The cylinder that the almost incorrosive material of gas constitutes; Another kind of anchor structure be one adopt that micro-processing method makes by XeF
2The film that the almost incorrosive material of gas constitutes.
Adopt XeF
2The process flow diagram of gas attack silicon making micro mechanical structure such as Fig. 3 are to shown in Figure 8.
As shown in Figure 3, at first adopt a narrower deep trouth of technology etchings such as deep reaction ion etching (DRIE) or KOH (or TMAH) anisotropic etch/erode away around anchor, adopt the method for thermal oxide to fill deep trouth and photolithography patterning subsequently, fill method is not limited to thermal oxide, packing material is not limited to silica, as long as can reach the effect of protection anchor; On anchor, make microstructured layers then, adopt XeF at last
2Thereby gas attack silicon discharges micro-structural.
Process shown in Figure 4 and shown in Figure 3 having any different slightly, difference mainly is: because the deep trouth broad of making around the anchor, thermal oxidation process can not the complete filling deep trouth, also need fill other material.Other processing step is basic identical.
Process shown in Figure 5 and Fig. 3, the main distinction shown in Figure 4 are: at first adopt technology etchings such as deep reaction ion etching (DRIE) or KOH (or TMAH) corrosion/erode away a pit in the place that will make anchor, (or adopt other process to cover one deck XeF all around at pit oxidation around the pit by thermal oxide
2The almost incorrosive material of gas), then with other materials with complete filling, serve as anchor jointly by the protective layer material and the packing material that cover around the pit.
Process shown in Figure 6 and shown in Figure 5 having any different slightly, difference mainly is: do not cover the layer protective layer material around the pit, anchor is fully by XeF
2The almost incorrosive material of gas serves as.
In Fig. 7, the process shown in Figure 8, anchor is by the XeF that covers around the pit
2The almost incorrosive thin-film material of gas constitutes.In Fig. 7, process shown in Figure 8, its difference is that the structure of pit, anchor is slightly different, the cross section of Fig. 7 pits, anchor be one trapezoidal, the cross section of Fig. 8 pits, anchor is a rectangle.
Described protective layer material is SiO
2, SiNx, SiC, Au, Al, Cr, photoresist or other almost can not be by XeF
2The material of gas attack.
Described packed layer material is polysilicon, non-crystalline silicon, photoresist, polyimides or other material.
The present invention has following good effect and advantage:
1, can accurately control the position of micro-structural anchor;
2, increase the output of single silicon chip unit component, reduce production costs;
3, improve the dutycycle of array device (as infrared focal plane array device), improve device performance.
Description of drawings
Fig. 1 is the anchor structure profile of band protective layer.Fig. 1 (a) anchor is made of silicon materials and protective layer material of covering around it; Fig. 1 (b) anchor is made of silicon materials, protective layer material and packed layer material of covering around it; Fig. 1 (c) anchor is made of protective layer material and packed layer material.
Fig. 2 is the anchor structure profile that directly is made of protective layer material.Fig. 2 (a) anchor is the cylinder that is made of protective layer material; Fig. 2 (b) anchor is the film that is made of protective layer material, and its cross section is trapezoidal; Fig. 2 (c) anchor is the film that is made of protective layer material, and its cross section is a rectangle.
Fig. 3 is the process chart of the embodiment 1 shown in Fig. 1 (a).A deep reaction ion etching around anchor goes out narrower deep trouth; Silica is filled up in the b thermal oxide in deep trouth, or adopts other process to make protective layer; C makes microstructured layers above anchor, make one deck silica as the method that adopts thermal oxide; D XeF
2Gas attack silicon discharges micro-structural.
Fig. 4 is the process chart of the embodiment 2 shown in Fig. 1 (b).A deep reaction ion etching around anchor goes out the deep trouth of broad; The b thermal oxide covers one deck silica around deep trouth, or adopts other process to make protective layer; C deposit polysilicon or other material fill up the slit of deep trouth; D makes microstructured layers above anchor, make one deck silica e XeF as the method that adopts thermal oxide
2Gas attack silicon discharges micro-structural.
Fig. 5 is the process chart of the embodiment 3 shown in Fig. 1 (c).A goes out pit at anchor place deep reaction ion etching; The b thermal oxide covers one deck silica around pit, or adopts other process making protective layer c deposit polysilicon or other material to fill up the slit of pit; D makes microstructured layers above anchor, make one deck silica as the method that adopts thermal oxide; E XeF
2Gas attack silicon discharges micro-structural.
Fig. 6 is the process chart of the embodiment 4 shown in Fig. 2 (a).A goes out pit at anchor place deep reaction ion etching; B adopts sputter or additive method deposit aluminium in pit, perhaps adopts other method to make other hardly by XeF
2The material of gas attack; C makes microstructured layers above anchor, make one deck silica as the method that adopts thermal oxide; D XeF
2Gas attack silicon discharges micro-structural.
Fig. 7 is the process chart of the embodiment 5 shown in Fig. 2 (b).A adopts KOH anisotropy rot etching technique to erode away pit at the anchor place; The b thermal oxide covers one deck silica around pit, or adopts other process to make protective layer; Silica is simultaneously as microstructured layers (also can adopt other material to make structure sheaf); C XeF
2Gas attack silicon discharges micro-structural.
Fig. 8 is the process chart of the embodiment 6 shown in Fig. 2 (c).A goes out pit at anchor place deep reaction ion etching; The b thermal oxide covers one deck silica around pit, or adopts other process to make protective layer; Silica is simultaneously as microstructured layers (also can adopt other material to make structure sheaf); C XeF
2Gas attack silicon discharges micro-structural.
Among the figure:
1-silicon base, 2-microstructured layers
3-anchor, 31-anchor protective layer
32-silicon materials, 33-anchor packed layer
34-aluminium, 4-deep trouth/pit
The specific embodiment
Further specify substantive distinguishing features of the present invention and obvious improvement below by specific embodiment; what need emphasize is in the specific embodiment; for setting forth convenient only be a kind of protective layer material or a kind of packed layer material, in fact protective layer material described in the summary of the invention and packed layer material all are applicable to described embodiment.
In the embodiment 1 shown in Fig. 1 (a); anchor 3 is made of silicon materials 32 and protective layer material 31 of covering around it; for convenience of description, the silica that protective layer material 31 is made with thermal oxidation technology in the description of the process below is the example explanation, but is not limited to silica material.
Elaborate the technological process of present embodiment below in conjunction with Fig. 3, the invention will be further described.
(1) the etching deep trouth 4.On silicon base 1, be mask with photoresist (being not limited to photoresist), photoetching is also graphical, adopts the DRIE process to etch narrower deep trouth 4 around anchor, removes photoresist, shown in Fig. 3 (a).The about 0.1 μ m-4 μ m of the width of deep trouth 4, the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers 2 areas from several microns
2The speed of gas attack silicon is selected;
(2) make anchor protective layer 31.To silicon chip carry out thermal oxide until deep trouth 4 by complete filling, oxidizing temperature is 900-1100 ℃, adopts reactive ion etching (RIE) or other method to remove the silica of silicon face, forms anchor protective layer 31, shown in Fig. 3 (b);
(3) make microstructured layers 2.Adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers 2, removes photoresist, shown in Fig. 3 (c);
(4) discharge microstructured layers 2.XeF
2Gas attack silicon discharges microstructured layers 2, shown in Fig. 3 (d).
In the embodiment 2 shown in Fig. 1 (b); anchor 3 by silicon materials 32, cover the protective layer material 31 around it and the packed layer material 33 that is filled between the protective layer material 31 constitutes; for convenience of description; the silica that protective layer material 31 is made with thermal oxidation technology in the description of the process below is the example explanation; the polysilicon that packed layer material 33 is made with low-pressure chemical vapor deposition (LPCVD) is an example, but protective layer material 31 and packed layer material 33 are not limited to above-mentioned material.
Elaborate the technological process of present embodiment below in conjunction with Fig. 4, the invention will be further described.
(1) the etching deep trouth 4.With photoresist (being not limited to photoresist) is mask, and photoetching is also graphical, adopts the DRIE process to etch the deep trouth 4 of broad around anchor, removes photoresist, shown in Fig. 4 (a).The width of deep trouth 4 is generally greater than 4 μ m, and the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers 2 areas from several microns
2The speed of gas attack silicon is selected;
(2) make anchor protective layer 31.Silicon chip is carried out thermal oxide, cover oxide layer on deep trouth 4 sidewalls, oxidizing temperature is 900-1100 ℃, adopts reactive ion etching (RIE) or other method to remove the silica of silicon face, forms anchor protective layer 31, shown in Fig. 4 (b);
(3) make anchor packed layer 33.Adopt the low-pressure chemical vapor deposition method deposit spathic silicon, depositing temperature is 550-650 ℃, removes the polysilicon of silicon face, forms anchor packed layer 33, shown in Fig. 4 (c);
(4) make microstructured layers 2.Adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers 2, removes photoresist, shown in Fig. 4 (d);
(5) discharge microstructured layers 2.XeF
2Gas attack silicon discharges microstructured layers 2, shown in Fig. 4 (e).
Should be noted that: in the present embodiment; after processing step (3) is made anchor packed layer 33; can also be by thermal oxide; the polysilicon of LPCVD deposition is converted into silica; be about to the packed layer material and be converted into protective layer material, the subsequent processing step (4) that carries out is again made microstructured layers 2 and processing step (5) release microstructured layers 2.
In the embodiment 3 shown in Fig. 1 (c); anchor 3 constitutes by covering protective layer material 31 around it and the packed layer material 33 that is filled between the protective layer material 31; for convenience of description; the silica that protective layer material 31 is made with thermal oxidation technology in the description of the process below is the example explanation; packed layer material 33 is an example with the polysilicon that LPCVD makes, but protective layer material 31 and packed layer material 33 are not limited to above-mentioned material.
Elaborate the technological process of present embodiment below in conjunction with Fig. 5, the invention will be further described.
(1) the etching pit 4.With photoresist (being not limited to photoresist) is mask, and photoetching is also graphical, adopts the DRIE process at the pit 4 that place, anchor place etches dark broad, removes photoresist, shown in Fig. 5 (a).The width of pit 4 is generally greater than 4 μ m, and the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers 2 areas from several microns
2The speed of gas attack silicon is selected;
(2) make anchor protective layer 31.Silicon chip is carried out thermal oxide, cover oxide layer on pit 4 sidewalls, oxidizing temperature is 900-1100 ℃, adopts reactive ion etching (RIE) or other method to remove the silica of silicon face, forms anchor protective layer 31, shown in Fig. 5 (b);
(3) make anchor packed layer 33.Adopt the LPCVD deposit spathic silicon, depositing temperature is 550-650 ℃, removes the polysilicon of silicon face, forms anchor packed layer 33, shown in Fig. 5 (c);
(4) make microstructured layers 2.Adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers 2, removes photoresist, shown in Fig. 5 (d);
(5) discharge microstructured layers 2.XeF
2Gas attack silicon discharges microstructured layers 2, shown in Fig. 5 (e).
Embodiment 4
In the embodiment 4 shown in Fig. 2 (a), anchor 3 is by XeF
2The almost incorrosive material of gas constitutes, and for convenience of description, the anchor material adopts Al in the description of the process below, but is not limited to Al, can be by not being XeF
2The protective material of gas attack is as the anchor post material.
Elaborate the technological process of present embodiment below in conjunction with Fig. 6, the invention will be further described.
(1) the etching pit 4.With photoresist (being not limited to photoresist) is mask, and photoetching is also graphical, adopts the DRIE process to etch darker pit 4 at place, anchor place, removes photoresist, shown in Fig. 6 (a).The width of pit 4 determines that according to concrete needs the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers 2 areas from several microns
2The speed of gas attack silicon is selected;
(2) make Al anchor post 34.Adopt sputter or other process in pit 4, to make Al anchor post (the Al anchor post is full of pit 4), shown in Fig. 6 (b);
(3) make microstructured layers 2.Adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers 2, removes photoresist, shown in Fig. 6 (c);
(4) discharge microstructured layers 2.XeF
2Gas attack silicon discharges microstructured layers 2, shown in Fig. 6 (d).
Embodiment 5
In the embodiment 5 shown in Fig. 2 (b), anchor 3 is by XeF
2The film that the almost incorrosive protective layer material of gas constitutes, for convenience of description, the anchor material adopts silica in the description of the process below, but the anchor material is not limited to silica.
Elaborate the technological process of present embodiment below in conjunction with Fig. 7, the invention will be further described.
(1) corrosion pit 4.With silica (being not limited to silica) is mask, and photoetching is also graphical, adopts KOH (or TMAH) wet method corrosion process to erode away darker pit 4 at place, anchor place, and removes silicon oxide masking film, shown in Fig. 7 (a).To the hundreds of micron, occurrence can be according to the size and the XeF of microstructured layers 2 areas from several microns for the depth bounds of pit 4
2The speed of gas attack silicon is selected;
(2) make anchor 3 and microstructured layers 2.Adopt thermal oxide to make silica at silicon face, pit 4 interior silica have all around served as anchor 3 effects, and the silica of silicon face then can be used as structure sheaf, also can adopt other method to make structure sheaf in addition, photoetching is also graphical, produces required microstructured layers 2, remove photoresist, shown in Fig. 7 (b); The cross section of anchor is trapezoidal;
(3) discharge microstructured layers 2.XeF
2Gas attack silicon discharges microstructured layers 2, shown in Fig. 7 (c).
Embodiment 6
In the embodiment 6 shown in Fig. 2 (c), anchor 3 is by XeF
2The film that the almost incorrosive protective layer material of gas constitutes, for convenience of description, the anchor material adopts silica in the description of the process below, but the anchor material is not limited to silica.
Elaborate the technological process of present embodiment below in conjunction with Fig. 8, the invention will be further described.
(1) the etching pit 4.With photoresist (being not limited to photoresist) is mask, photoetching is also graphical, employing DRIE process etches pit 4 at place, anchor place or adopts KOH (or TMAH) wet method corrosion process to erode away darker pit 4 at place, anchor place, removes photoresist, shown in Fig. 8 (a).To the hundreds of micron, occurrence can be according to the size and the XeF of microstructured layers 2 areas from several microns for the depth bounds of pit 4
2The speed of gas attack silicon is selected;
(2) make anchor 3 and microstructured layers 2.Adopt thermal oxide to make silica at silicon face, pit 4 interior silica have all around served as anchor 3 effects, and the silica of silicon face then can be used as structure sheaf, also can adopt other method to make structure sheaf in addition, photoetching is also graphical, produces required microstructured layers 2, remove photoresist, shown in Fig. 8 (b); The cross section of anchor is a rectangle;
(3) discharge microstructured layers 2.XeF
2Gas attack silicon discharges microstructured layers 2, shown in Fig. 8 (c).
Claims (10)
1. the preparation method of anchor in the xenon difluoride gas corrosion process; it is characterized in that adopting deep reaction ion etching or potassium hydroxide or TMAH anisotropy rot etching method etching or erode away a deep trouth around the anchor that will protect, then deposit XeF in deep trouth
2The incorrosive material of gas protects anchor; Perhaps adopt deep reaction ion etching or KOH or TMAH caustic solution etching or erode away a darker pit, by deposit XeF in pit
2The incorrosive material of gas forms required anchor; The structure of anchor be in following 5 kinds any one, to be anchors be made of silicon materials and protective layer material of covering around it for they; Anchor is made of silicon materials, protective layer material and packed layer material of covering around it; Anchor is made of protective layer material and packed layer material; Anchor is the cylinder that is made of protective layer material; Anchor is the film that is made of protective layer material.
2. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 1, it is characterized in that by silicon materials and cover around not by XeF
2The manufacture craft of the anchor of the protective material of gas attack, at first adopt deep reaction ion etching or KOH or TMAH anisotropy rot etching method or etching to erode away a narrower deep trouth around anchor, adopt the method for thermal oxide to fill deep trouth and photolithography patterning subsequently, fill method is not limited to thermal oxide, packing material is not limited to silica, as long as can reach the effect of protection anchor; On anchor, make microstructured layers then, adopt XeF at last
2Thereby gas attack silicon discharges micro-structural, and concrete processing step is:
1. etching deep trouth: on silicon base, be mask with the photoresist, photoetching is also graphical, adopts the deep reaction ion etching process to etch narrower deep trouth around anchor and removes photoresist; The about 0.1 μ m-4 μ m of the width of deep trouth, the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers area from several microns
2The speed of gas attack silicon is selected;
2. make the anchor protective layer: to silicon chip carry out thermal oxide until deep trouth by complete filling, oxidizing temperature is 900-1100 ℃, adopts reactive ion etching or other method to remove the silica of silicon face, forms the anchor protective layer;
3. make microstructured layers: adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers and removes photoresist;
4. discharge microstructured layers: XeF
2Gas attack silicon discharges microstructured layers.
3. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 1, it is characterized in that covering the protective layer material around it and being filled in the anchor that the packed layer material between the protective layer material constitutes, its manufacture craft by silicon materials:
1. etching deep trouth: with photoresist or to be not limited to photoresist be mask, photoetching is also graphical, adopts the deep reaction ion etching process to etch the deep trouth of broad around anchor and removes photoresist; The width of deep trouth is greater than 4 μ m, and the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers area from several microns
2The speed of gas attack silicon is selected;
2. make the anchor protective layer: silicon chip is carried out thermal oxide, covering oxide layer on the deep trouth sidewall, oxidizing temperature is 900-1100 ℃, adopts reactive ion etching or other method to remove the silica of silicon face, forms the anchor protective layer;
3. make the anchor packed layer: adopt the low-pressure chemical vapor deposition method deposit spathic silicon, depositing temperature is 550-650 ℃, removes the polysilicon of silicon face, forms the anchor packed layer;
4. make microstructured layers: adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers, removes photoresist;
5. discharge microstructured layers: XeF
2Gas attack silicon discharges microstructured layers.
4. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 1, it is characterized in that covering the protective layer material around it and being filled in the anchor that the packed layer material between the protective layer material constitutes, its manufacture craft by silicon materials:
1. etching deep trouth: with photoresist or to be not limited to photoresist be mask, photoetching is also graphical, adopts the deep reaction ion etching process to etch the deep trouth of broad around anchor and removes photoresist; The width of deep trouth is greater than 4 μ m, and the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers area from several microns
2The speed of gas attack silicon is selected;
2. make the anchor protective layer: silicon chip is carried out thermal oxide, covering oxide layer on the deep trouth sidewall, oxidizing temperature is 900-1100 ℃, adopts reactive ion etching or other method to remove the silica of silicon face, forms the anchor protective layer;
3. make the anchor packed layer: adopt the low-pressure chemical vapor deposition method deposit spathic silicon, depositing temperature is 550-650 ℃, removes the polysilicon of silicon face, forms the anchor packed layer; By thermal oxide the polysilicon that deposits is converted into silica again, the packed layer material is converted into protective layer material;
4. make microstructured layers: adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers, removes photoresist;
5. discharge microstructured layers: XeF
2Gas attack silicon discharges microstructured layers.
5. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 1, it is characterized in that its manufacture craft is by covering the protective layer material around it and being filled in the anchor that the packed layer material between the protective layer material constitutes:
1. etching pit: with photoresist or to be not limited to photoresist be mask, photoetching is also graphical, adopt deep ion reactive ion etching process etch at place, anchor place dark broad pit, remove photoresist; The width of pit is greater than 4 μ m, and the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers area from several microns
2The speed of gas attack silicon is selected;
2. make the anchor protective layer: silicon chip is carried out thermal oxide, covering oxide layer on the pit sidewall, oxidizing temperature is 900-1100 ℃, adopts reactive ion etching or other method to remove the silica of silicon face, forms the anchor protective layer;
3. make the anchor packed layer: adopt low pressure gas phase deposition method deposit spathic silicon, depositing temperature is 550-650 ℃, removes the polysilicon of silicon face, forms the anchor packed layer;
4. make microstructured layers: adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers, removes photoresist;
5. discharge microstructured layers: XeF
2Gas attack silicon discharges microstructured layers.
6. the preparation method of anchor in the xenon difluoride gas corrosion process of narrating by claim 1 is characterized in that constituting the anchor that cylinder is made by protective layer material, and its processing step is:
1. etching pit: with photoresist or to be not limited to photoresist be mask, photoetching is also graphical, adopts deep ion reactive ion etching process to etch darker pit, remove photoresist at place, anchor place; The width of pit determines that according to concrete needs the depth capacity of etching is by the etching depth-to-width ratio decision of etching width and equipment, and to the hundreds of micron, the concrete degree of depth can be according to the size and the XeF of microstructured layers area from several microns
2The speed of gas attack silicon is selected;
2. make anchor post: adopt sputter or other process to make anchor post in pit, the anchor post material that protective material is formed is full of pit;
3. make microstructured layers: adopt thermal oxide to make the silica structure sheaf at silicon face, or adopt other method to make structure sheaf, photoetching is also graphical, produces required microstructured layers, removes photoresist;
4. discharge microstructured layers: XeF
2Gas attack silicon discharges microstructured layers.
7. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 1, it is characterized in that by XeF
2The manufacturing process steps of the film shape anchor that the incorrosive protective layer material of gas constitutes is:
1. corrosion pit: with silica or to be not limited to silica be mask, photoetching is also graphical, adopts KOH or TMAH wet method corrosion process to erode away darker pit at place, anchor place, and removes silicon oxide masking film; To the hundreds of micron, occurrence can be according to the size and the XeF of microstructured layers area from several microns for the depth bounds of pit
2The speed of gas attack silicon is selected;
2. make anchor and microstructured layers: adopt thermal oxide to make silica at silicon face, silica around in the pit has served as the anchor effect, the silica of silicon face then can be used as structure sheaf, or adopt other method to make structure sheaf in addition, photoetching is also graphical, produces required microstructured layers, removes photoresist;
3. discharge microstructured layers: XeF
2Gas attack silicon discharges microstructured layers.
8. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 7, the anchor cross section that it is characterized in that the film shape be rectangle and trapezoidal in a kind of.
9. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 7, it is characterized in that described protective layer material is SiO
2, SiNx, SiC, Au, Al, Cr, photoresist or other can not be by XeF
2The material of gas attack.
10. by the preparation method of anchor in the described xenon difluoride gas corrosion process of claim 1～7, it is characterized in that described packed layer material is polysilicon, non-crystalline silicon, photoresist or polyimides.
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| CN101538006B (en) * | 2009-04-24 | 2011-04-20 | 中国科学院微电子研究所 | Method for manufacturing optical modulation thermal imaging focal plane array |
| CN101538005B (en) * | 2009-03-17 | 2011-04-20 | 中国科学院微电子研究所 | Method for manufacturing optical modulation thermal imaging focal plane array |
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| US6360036B1 (en) * | 2000-01-14 | 2002-03-19 | Corning Incorporated | MEMS optical switch and method of manufacture |
| US6560861B2 (en) * | 2001-07-11 | 2003-05-13 | Xerox Corporation | Microspring with conductive coating deposited on tip after release |
| KR100517496B1 (en) * | 2002-01-04 | 2005-09-28 | 삼성전자주식회사 | Cantilever having step-up structure and method for manufacturing the same |
| US6835589B2 (en) * | 2002-11-14 | 2004-12-28 | International Business Machines Corporation | Three-dimensional integrated CMOS-MEMS device and process for making the same |
| CN1451601A (en) * | 2003-05-23 | 2003-10-29 | 东南大学 | Film micromechanical anchor |
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| CN101538005B (en) * | 2009-03-17 | 2011-04-20 | 中国科学院微电子研究所 | Method for manufacturing optical modulation thermal imaging focal plane array |
| CN101538006B (en) * | 2009-04-24 | 2011-04-20 | 中国科学院微电子研究所 | Method for manufacturing optical modulation thermal imaging focal plane array |
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