CN101538005B - Method for manufacturing optical modulation thermal imaging focal plane array - Google Patents
Method for manufacturing optical modulation thermal imaging focal plane array Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 238000001931 thermography Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 238000001020 plasma etching Methods 0.000 claims description 30
- 238000002360 preparation method Methods 0.000 claims description 21
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 238000009279 wet oxidation reaction Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 125000001246 bromo group Chemical group Br* 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
The invention relates to a method for manufacturing an optical modulation thermal imaging focal plane array, which comprises the following steps: step 1, manufacturing a doped layer on the upper surface of a monocrystalline silicon piece; step 2, etching a groove on the upper surface of the monocrystalline silicon piece according to a preset pattern; step 3, covering a silicon oxide layer on the inner wall of the groove; step 4, growing polysilicon to fill the groove; step 5, covering a thin film layer A on the upper surface of the monocrystalline silicon piece; step 6, covering a metal layer on the thin film layer A; step 7, etching the metal layer according to a preset pattern; step 8, etching the thin film layer A according to a preset pattern; step 9, corroding monocrystalline silicon from the back of the silicon wafer according to a preset pattern; and step 10, corroding the doped layer according to a preset pattern to obtain the fully-hollowed structure optical modulation thermal imaging focal plane array with the silicon support frame.
Description
Technical field
The invention belongs to the silicon micro mechanical manufacture field in the microelectric technique, particularly a kind of silicon micromachining technique is made the method for the full engraved structure optical modulation thermal imaging focal plane array (FPA) of band silicon support frame.
Background technology
Adopt optical modulation method, adopt the micro-cantilever heat insulation structure mostly based on the non-refrigeration type infrared acquisition focal-plane array (FPA) of MEMS (MEMS), the structure of their detectivity and device has direct relation.The focal-plane array (FPA) of this type adopts the plurality of layers of double Material Cantilever Beam heat insulation structure that has sacrifice layer usually, the characteristics of this structure are the silicon substrates that remains with the infrared-sensitive district, and utilize sandwich construction to realize the heat isolation, its shortcoming is that infra-red radiation can be reflected by silicon substrate earlier before arriving sensing unit, thereby cause the infra-red radiation utilization rate of this class device low, influence device performance.In order to address this problem, we had once proposed the light modulation un-cooled infrared focal plane array of the full engraved structure of a kind of substrate, the characteristics of this device are that the silicon substrate in the infrared-sensitive unit area all is removed, and sensing unit relies on the thin film support structure fully.The light modulation un-cooled infrared focal plane array of the full engraved structure of this kind has solved the problem that infra-red radiation is reflected by silicon substrate, thereby has greatly improved the response sensitivity performance of device.But this device is owing to device architecture is only supported by thin film, thus fragile unusually, be easy to breakage.
Summary of the invention
Technical problem to be solved by this invention provides a kind of preparation method of making the full engraved structure optical modulation thermal imaging focal plane array (FPA) of band silicon support frame.
The present invention solves the problems of the technologies described above by following technical solution, and the present invention proposes a kind of preparation method of the full engraved structure optical modulation thermal imaging focal plane array with silicon support frame, comprises the steps:
Step 1, cover doped layer at the monocrystalline silicon piece upper surface;
Step 2, according to predetermined pattern, at monocrystalline silicon piece upper surface etching groove;
Step 3, at trench wall capping oxidation silicon layer;
Step 4, growing polycrystalline silicon fill up groove;
Step 5, at monocrystalline silicon piece upper surface cover layer A;
Step 6, on thin layer A, cover metal level;
Step 7, according to predetermined pattern, etching sheet metal;
Step 8, according to predetermined pattern, etched film layer A;
Step 9, according to predetermined pattern, from back side corrosion monocrystalline silicon;
Step 10, by predetermined pattern, the corrosion doped layer.
Thereby obtain full engraved structure optical modulation thermal imaging focal plane array with silicon support frame.
Preferably, above-mentioned monocrystalline silicon piece monocrystalline silicon crystal orientation is＜100 〉.
Preferably, in the above-mentioned steps 1, described doped layer be after adopting high energy particle to inject again the impurity diffusing, doping technology of the method for high annealing or the standard dense B of admixture (boron), P (phosphorus) or As (arsenic) impurity on described monocrystalline silicon piece realize.
Preferably, in the above-mentioned steps 2, described on monocrystalline silicon piece etching groove be to adopt SiO2 (silica) as masking layer, use RIE (reaction particle etching) equipment or ICP (inductive couple plasma etching) equipment to realize by the dark silicon etching of anisotropic dry.
Preferably, in the above-mentioned steps 3, be to adopt dry oxidation technology or wet oxidation process to realize at the trench wall growing silicon oxide.
Preferably, in the above-mentioned steps 4, growing polycrystalline silicon is to adopt LPCVD (low-pressure chemical vapor phase deposition) technology to generate one deck polysilicon at the monocrystalline silicon piece upper surface, and fill up described groove, use basic etching gas of Br (bromine) and RIE (reactive ion etching) equipment then, realize by the unnecessary polysilicon of polysilicon dry etching.
Preferably, above-mentioned steps 5 also comprises, at described monocrystalline silicon piece lower surface cover layer B, described thin layer A and thin layer B are silicon nitride material or silica material, and this process is to adopt LPCVD (low-pressure chemical vapor phase deposition) or PECVD (plasma-reinforced chemical vapor deposition) to realize.
Preferably, in the above-mentioned steps 6, described covering metal level is to adopt MSS (magnetron sputtering) technology to realize.
Preferably, in the above-mentioned steps 7, described etching sheet metal A adopts RIE (reactive ion etching) equipment, realizes by dry etch process.
Preferably, in the above-mentioned steps 8, described etched film layer A adopts RIE (reactive ion etching) equipment etching to form.
Preferably, above-mentioned steps 9 comprises that also according to predetermined pattern etched film layer B, this etching process is by using RIE (reactive ion etching) equipment, adopting RIE (reactive ion etching) technology to realize.
Preferably, in the above-mentioned steps 9, described corrosion monocrystalline silicon adopts is that KOH (potassium hydroxide) solution or TMAH (TMAH) solution are as etchant solution.
Preferably, in the above-mentioned steps 10, described corrosion doped layer is to adopt XeF
2(xenon difluoride) is as etchant gas.
In sum, the present invention is from the microfabrication angle, combination silicon loses deeply, the technology such as each homogeny dry etching of polysilicon trench filling, monocrystalline silicon wet etching self termination, silicon, the preparation method of a kind of full engraved structure optical modulation thermal imaging focal plane array with silicon support frame that proposes, thereby a kind of preparation method of making the full engraved structure optical modulation thermal imaging focal plane array (FPA) of band silicon support frame that perfect the present invention proposes.
A kind of preparation method of making the full engraved structure optical modulation thermal imaging focal plane array (FPA) of band silicon support frame of the present invention also comprises: a series of figure transfer work such as the gluing of positive photoresist, exposure, development.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 to Figure 12 is the structural representation of the product that each step forms of the preparation method of the full engraved structure optical modulation thermal imaging focal plane array of band silicon support frame of the present invention.
The specific embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its specific embodiment of preparation method, structure, feature and the effect thereof of the full engraved structure optical modulation thermal imaging focal plane array of the band silicon support frame that foundation the present invention is proposed, describe in detail as after.
Step 1, with reference to Fig. 1, adopt high energy particle to inject after the method for high annealing or the impurity diffusing, doping technology of standard again, be＜100 in the crystal orientation〉the dense B of front doping one deck (boron) doped layer 102 of monocrystalline silicon piece 101, its impurity concentration is greater than 1e19l/cm
3, the degree of depth of dense B (boron) doped layer 102 of doping is between 2 microns to 20 microns;
Step 2, with reference to Fig. 2, use RIE (reaction particle etching) equipment or ICP (inductive couple plasma etching) equipment, adopt SiO2 (silica) to make masking layer 103, carry out the dark silicon etching of anisotropic dry in monocrystalline silicon piece 101 fronts and form groove, obtain the degree of depth between 5 microns to 30 microns, the groove of width between 0.5 micron to 3 microns;
Step 3 with reference to Fig. 3, adopts dry oxidation technology or wet oxidation process, and monocrystalline silicon piece is carried out oxidation, at the silicon oxide layer 104 of 0.05 micron to 0.1 micron of described groove madial wall growth one deck;
Step 4 with reference to Fig. 4 and Fig. 5, adopts LPCVD (low-pressure chemical vapor phase deposition) technology, and at described monocrystalline silicon piece 101 positive growth one deck polysilicon layers 105, polysilicon layer 105 thickness and fill up groove between 0.25 micron to 1.5 microns; Use the basic etching gas of Br (bromine), adopt RIE (reactive ion etching) equipment, the polysilicon etching away on the monocrystalline silicon piece 101 in groove;
Step 5, with reference to Fig. 6, adopt the technology of LPCVD (low-pressure chemical vapor phase deposition) technology or PECVD (plasma-reinforced chemical vapor deposition), at low stress nitride silicon membrane layer 106 or the silicon oxide film layer 106 of two-sided growth thickness between 0.1 micron to 2 microns of monocrystalline silicon piece 101;
Step 6 with reference to Fig. 7, adopts MSS (magnetron sputtering) technology, at the aluminum metal thin layer 107 of sputter one layer thickness between 0.1 micron to 0.8 micron on described silicon nitride film layer 106 or the silicon oxide film layer 106;
Step 7 with reference to Fig. 8, adopts RIE (reactive ion etching) equipment, adopts dry etch process to etch away the aluminum metal thin layer 107 of part;
Step 8 with reference to Fig. 9, adopts RIE (reactive ion etching) equipment, adopts fluorine base gas, etches away partial oxidation silicon membrane layer 106, forms cantilever beam structures;
Step 9, with reference to Figure 10 and Figure 11, use has the litho machine of dual surface lithography function such as the MA6 of SUSS company or 620 litho machines of EVG company and defines back side figure at monocrystalline silicon piece 101 back sides, use RIE (reactive ion etching) equipment, adopt RIE (reactive ion etching) technology, fall the silicon nitride film layer 106 or the silicon oxide film layer 106 at the part back side at the pairing silicon chip back side, silicon chip front description district dry etching, make the monocrystalline silicon at monocrystalline silicon piece 101 back sides partly expose, this need use litho machine such as the MA6 of SUSS company or 620 litho machines of EVG company with dual surface lithography function; The window of the monocrystalline silicon that monocrystalline silicon piece 101 back portions are exposed corrodes, the silicon that utilization is doped with the B element of high concentration can not be corroded that liquid corrodes and anisotropic etchant to monocrystalline silicon＜111 principle that the crystal face corrosion rate is extremely low, make corrosion process arrive dense boron-dopped layer 102, automatically stop then, KOH (potassium hydroxide) solution or TMAH (TMAH) solution, concentration is respectively 33% KOH (potassium hydroxide) solution or 20% TMAH (TMAH) solution, and corrosion temperature is 50 to spend between 90 degree.
Step 10 with reference to Figure 12, adopts XeF
2(xenon difluoride) as etchant gas under normal pressure, adopt dry anisotropic to corrode and fall the monocrystalline silicon of not removed that has dense B (boron) impurity by wet etching from the front etch of silicon chip, it is dense B (boron) doped layer 102, finish corrosion work, and finally discharge device architecture, finish the manufacturing procedure of entire device.
The method of the foregoing description also comprises: a series of figure transfer work such as the gluing of positive photoresist, exposure, development.
Claims (13)
1. the preparation method of an optical modulation thermal imaging focal plane array is characterized in that, this method comprises:
Step 1, make doped layer at the monocrystalline silicon piece upper surface;
Step 2, according to predetermined pattern, at monocrystalline silicon piece upper surface etching groove;
Step 3, at trench wall capping oxidation silicon layer;
Step 4, growing polycrystalline silicon fill up groove;
Step 5, at monocrystalline silicon piece upper surface cover layer A, at described monocrystalline silicon piece lower surface cover layer B;
Step 6, on thin layer A, cover metal level;
Step 7, according to predetermined pattern, the etched portions metal level;
Step 8, according to predetermined pattern, etched portions thin layer A;
Step 9, according to predetermined pattern, from silicon chip back side corrosion monocrystalline silicon; According to predetermined pattern etched film layer B;
Step 10, by predetermined pattern, the corrosion doped layer obtains the full engraved structure optical modulation thermal imaging focal plane array with silicon support frame.
2. the preparation method of optical modulation thermal imaging focal plane array according to claim 1 is characterized in that, the monocrystalline silicon crystal orientation of above-mentioned monocrystalline silicon piece is＜100 〉.
3. the preparation method of optical modulation thermal imaging focal plane array according to claim 1, it is characterized in that, in the above-mentioned steps 1, described doped layer is that impurity diffusing, doping the technology dense boron of admixture, arsenic or phosphorus on described monocrystalline silicon piece of the method for high annealing or standard are realized again after adopting high energy particle to inject.
4. the preparation method of optical modulation thermal imaging focal plane array according to claim 1, it is characterized in that, etching groove on monocrystalline silicon piece described in the above-mentioned steps 2 is to adopt silica as masking layer, uses reaction particle etching apparatus or inductive couple plasma etching apparatus to realize by the dark silicon etching of anisotropic dry.
5. the preparation method of optical modulation thermal imaging focal plane array according to claim 1 is characterized in that, in the above-mentioned steps 3, is to adopt dry oxidation technology or wet oxidation process to realize at the trench wall growing silicon oxide.
6. the preparation method of optical modulation thermal imaging focal plane array according to claim 1, it is characterized in that, in the above-mentioned steps 4, growing polycrystalline silicon is to adopt low-pressure chemical vapor phase deposition technology to generate one deck polysilicon at the monocrystalline silicon piece upper surface, and fill up described groove, use bromo etching gas and reactive ion etching equipment then, realize by the polysilicon in groove on the described monocrystalline silicon piece of polysilicon dry etching.
7. the preparation method of optical modulation thermal imaging focal plane array according to claim 1, it is characterized in that, thin layer A described in the above-mentioned steps 5 and thin layer B are silicon nitride material or silica material, and this process is to adopt low-pressure chemical vapor phase deposition or plasma-reinforced chemical vapor deposition to realize.
8. the preparation method of optical modulation thermal imaging focal plane array according to claim 1 is characterized in that, in the above-mentioned steps 6, described covering metal level is to adopt magnetron sputtering technique to realize.
9. the preparation method of optical modulation thermal imaging focal plane array according to claim 1 is characterized in that, in the above-mentioned steps 7, described etching sheet metal is to adopt reactive ion etching equipment, realizes by dry etch process.
10. the preparation method of optical modulation thermal imaging focal plane array according to claim 7 is characterized in that, in the above-mentioned steps 8, described etched film layer A adopts the reactive ion etching equipment etching to form.
11. the preparation method of optical modulation thermal imaging focal plane array according to claim 1 is characterized in that, the etching process of above-mentioned steps 9 is by using reactive ion etching equipment, adopting reactive ion etching process to realize.
12. the preparation method of optical modulation thermal imaging focal plane array according to claim 1 is characterized in that, in the above-mentioned steps 9, described corrosion monocrystalline silicon adopts is that potassium hydroxide solution or tetramethyl ammonium hydroxide solution are as etchant solution.
13. the preparation method of optical modulation thermal imaging focal plane array according to claim 1 is characterized in that, in the above-mentioned steps 10, described corrosion doped layer is to adopt xenon difluoride as etchant gas.
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| CN101538006B (en) * | 2009-04-24 | 2011-04-20 | 中国科学院微电子研究所 | Method for manufacturing optical modulation thermal imaging focal plane array |
| CN103318836B (en) * | 2012-03-21 | 2016-01-06 | 中国科学院微电子研究所 | Optical readout full-hollow focal plane array with heat sink structure and manufacturing method thereof |
| CN110589755A (en) * | 2019-09-06 | 2019-12-20 | 赣南师范大学 | Double-sided self-aligned etched silicon cantilever array thermoelectric converter embedded with polycrystalline silicon resistor |
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| CN1807221A (en) * | 2005-12-29 | 2006-07-26 | 中国科学院上海微系统与信息技术研究所 | Anchor production method in xenon difluoride gas corrosion process |
| CN1911781A (en) * | 2005-08-11 | 2007-02-14 | 中国科学院微电子研究所 | Manufacturing method for improving performance of uncooled infrared focal plane array device |
| CN101538006A (en) * | 2009-04-24 | 2009-09-23 | 中国科学院微电子研究所 | Method for manufacturing optical modulation thermal imaging focal plane array |
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| CN1911781A (en) * | 2005-08-11 | 2007-02-14 | 中国科学院微电子研究所 | Manufacturing method for improving performance of uncooled infrared focal plane array device |
| CN1807221A (en) * | 2005-12-29 | 2006-07-26 | 中国科学院上海微系统与信息技术研究所 | Anchor production method in xenon difluoride gas corrosion process |
| CN101538006A (en) * | 2009-04-24 | 2009-09-23 | 中国科学院微电子研究所 | Method for manufacturing optical modulation thermal imaging focal plane array |
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