CN103979481B - MEMS aluminium germanium bonding structure and manufacture method thereof - Google Patents
MEMS aluminium germanium bonding structure and manufacture method thereof Download PDFInfo
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Abstract
The invention provides a kind of MEMS aluminium germanium bonding structure and manufacture method thereof, this structure comprises: device silicon chip, this device silicon chip has micro mechanical structure district and aluminium bonded layer; Sealing cap silicon chip, this sealing cap silicon chip has germanium bonded layer, this germanium bonded layer and described aluminium bonded layer bonding; Wherein, described sealing cap silicon chip also has the pitch post stretched out from described sealing cap silicon chip, the end of this pitch post contacts with described device silicon chip.The present invention can control the aluminium germanium lateral extension amount occurred due to bonding pressure in bonding process, obtains the aluminium germanium bonded layer of preset thickness.
Description
Technical field
The present invention relates to MEMS technology field, particularly relate to a kind of MEMS aluminium germanium bonding structure and manufacture method thereof.
Background technology
MEMS technology is described as 21 century with revolutionary new and high technology, and its development starts from the sixties in 20th century, and MEMS is the abbreviation of English MicroElectroMechanicalSystem, i.e. microelectromechanical systems, is the ingenious combination of microelectronics and micromechanics.Microelectromechanical systems (MEMS) technology will produce revolutionary impact to following human lives.The basic technology of MEMS mainly comprise anisotropic silicon lithographic technique,
/ silicon bonding techniques, surface micromachining technique, LIGA technology etc., become the requisite core technology of development and production MEMS.
In the MEMS process technology based on silicon; portioned product such as accelerometer, gyroscope etc. need to implement protection to the device architecture part of micromechanics; the method of this protection adopts cavity sealing cap sheet operator guards exactly above device; by various bonding technologies such as Si-Si direct bonding, anode linkage, aluminium germanium, gold silicon eutectic bonding, glass dust bondings; make device silicon chip and sealing cap sheet is airtight combines, make the device architecture of micromechanics and external environment condition be isolated like this.
And in these bonding technologies, compare with other bonding technologies, the advantage of aluminium germanium eutectic bonding is that its bonding temperature is low, has good sealing effect, bond strength is high, production efficiency is high, and cost is low, and can be compatible with CMOS technology, be therefore widely used in the encapsulation of MEMS product wafer level; Shortcoming is in bonding sintering process, aluminium germanium easily produces and extends and flowing, its extension aluminium germanium likely affects the work of MEMS micro-mechanical movable structure division, thus device destruction or overall performance are declined, and the extension of aluminium germanium and flowing cause needing to take larger bond area area.In addition, in bonding process, the bonded layer thickness in whole silicon chip is closely related with pressure, and the region bonded layer thickness that pressurized is large is thin, and the region bonded layer thickness that pressurized is little is large, and bonding quality and sealing are subject to the impact of bonding pressure very large.
As everyone knows, for MEMS such as inertial sensors, how reasonable set and the size that controls shared by bonding region, comprising the height of bonded layer, is vital on the impact of encapsulation yield rate and finished product reliability.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of MEMS aluminium germanium bonding structure and manufacture method thereof, can control the aluminium germanium lateral extension amount occurred due to bonding pressure in bonding process, obtain the aluminium germanium bonded layer of preset thickness.
For solving the problems of the technologies described above, the invention provides a kind of MEMS aluminium germanium bonding structure, comprising:
Device silicon chip, this device silicon chip has micro mechanical structure district and aluminium bonded layer;
Sealing cap silicon chip, this sealing cap silicon chip has germanium bonded layer, this germanium bonded layer and described aluminium bonded layer bonding;
Wherein, described sealing cap silicon chip also has the pitch post stretched out from described sealing cap silicon chip, the end of this pitch post contacts with described device silicon chip, described sealing cap silicon chip also has the flash groove of indent, described flash groove is between described germanium bonded layer and pitch post, and described pitch post is between described flash groove and micro mechanical structure district
According to one embodiment of present invention, described flash groove and the distance between described germanium bonded layer and pitch post are 30 μm ~ 50 μm.
According to one embodiment of present invention, the degree of depth of described flash groove is 10 μm ~ 100 μm, and the width of described flash groove is 20 μm ~ 50 μm.
According to one embodiment of present invention, the width of described pitch post is 20 μm ~ 60 μm.
According to one embodiment of present invention, described pitch post is multilayer lamination structure.
According to one embodiment of present invention, described pitch post comprises:
Silica membrane, is positioned on this sealing cap silicon chip;
Silicon nitride film, is stacked on this silica membrane.
According to one embodiment of present invention, the height of described silica membrane is 1000nm ~ 2000nm, and the height of described silicon nitride film is 100nm ~ 200nm.
According to one embodiment of present invention, described sealing cap silicon also has the micro mechanical structure protection chamber of indent, the position in this micro mechanical structure protection chamber is corresponding with the position in described micro mechanical structure district.
For solving the problems of the technologies described above, present invention also offers a kind of manufacture method of MEMS aluminium germanium bonding structure, comprising:
Device substrate and sealing cap substrate are provided;
Described sealing cap substrate forms germanium bonded layer and pitch post, to form sealing cap silicon chip;
Described device substrate forms aluminium bonded layer and micro mechanical structure district, to form device silicon chip;
Described sealing cap silicon chip is formed the flash groove of indent, and described flash groove is between described germanium bonded layer and pitch post, and described pitch post is between described flash groove and micro mechanical structure district;
Carry out bonding to described germanium bonded layer and described aluminium bonded layer, to make described sealing cap silicon chip and device silicon chip be bonded together, after bonding, the end of described pitch post contacts with described device silicon chip.
According to one embodiment of present invention, described flash groove and the distance between described germanium bonded layer and pitch post are 30 μm ~ 50 μm.
According to one embodiment of present invention, the degree of depth of described flash groove is 10 μm ~ 100 μm, and the width of described flash groove is 20 μm ~ 50 μm.
According to one embodiment of present invention, when forming described flash groove, on described sealing cap substrate, also form micro mechanical structure protection chamber in the lump, the position in this micro mechanical structure protection chamber is corresponding with the position in described micro mechanical structure district.
According to one embodiment of present invention, the formation method in described flash groove and micro mechanical structure protection chamber comprises:
Adopt photoetching process to form window on described sealing cap substrate, the position of this window corresponds to the position of described flash groove and micro mechanical device;
Dry etch process is adopted to etch the sealing cap substrate in described window, to form described flash groove and micro mechanical device.
According to one embodiment of present invention, the width of described pitch post is 20 μm ~ 60 μm.
According to one embodiment of present invention, described pitch post is multilayer lamination structure.
According to one embodiment of present invention, the formation method of described pitch post comprises:
Described sealing cap substrate forms silica membrane;
Described silica membrane forms silicon nitride film;
Described silicon nitride film and silica membrane are etched, to form described pitch post.
According to one embodiment of present invention, the height of described silica membrane is 1000nm ~ 2000nm, and the height of described silicon nitride film is 100nm ~ 200nm.
According to one embodiment of present invention, temperature when carrying out bonding is 425 DEG C ~ 445 DEG C.
Compared with prior art, the present invention has the following advantages:
In the manufacture method of the MEMS aluminium germanium bonding structure of the embodiment of the present invention, sealing cap silicon chip is provided with pitch post, this pitch post can control the distance between sealing cap silicon chip and device silicon chip in bonding process, make pressure in sheet substantially even, be conducive to optimizing bonding quality, and the aluminium germanium lateral extension amount that causes due to bonding pressure in bonding process can be controlled, thus the aluminium germanium bonded layer of preset thickness can be obtained, the sealing of product bonded layer can be ensured.
Further, in the manufacture method of the MEMS aluminium germanium bonding structure of the embodiment of the present invention, sealing cap silicon chip can also have flash groove, this flash groove is between germanium bonded layer and micro mechanical structure district, can the aluminium germanium lateral extension amount that pressurized in bonding process occurs be limited in flash groove, prevent aluminium germanium lateral extension to micro mechanical structure district from causing the impact of the movable device structure on micromechanics.Therefore, the technical scheme of the embodiment of the present invention can device architecture in micro mechanical structure district, is conducive to the area saving device bond area, thus reaches the chip area reducing whole product, the object increasing effective number of die, reduction manufacturing cost.
In addition, the method that the manufacture method of the MEMS aluminium germanium bonding structure of the embodiment of the present invention can apply microelectronic integrated circuit routine is implemented, and CMOS production-line technique is compatible, and can not cause particle contaminant, metal contamination equivalent risk.
The manufacture method of the MEMS aluminium germanium bonding structure of the embodiment of the present invention is applicable to MEMS product mass industrialized production, is conducive to the reliability improving product; This manufacture method is also applicable to the eutectic bonding handicraft product of other non-MEMS, with a wide range of applications.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the MEMS aluminium germanium bonding structure of the embodiment of the present invention;
Fig. 2 is the schematic flow sheet of the manufacture method of the MEMS aluminium germanium bonding structure of the embodiment of the present invention;
Fig. 3 to Fig. 7 is the cross-sectional view that in the manufacture method of the MEMS aluminium germanium bonding structure of the embodiment of the present invention, each step is corresponding.
Detailed description of the invention
Below in conjunction with specific embodiments and the drawings, the invention will be further described, but should not limit the scope of the invention with this.
With reference to figure 1, the MEMS aluminium germanium bonding structure of the present embodiment comprises the device silicon chip 201 and sealing cap silicon chip 101 that are bonded together.It should be noted that, " silicon chip " is only the usual saying of one of this area, and its material is not limited to silicon, can also be other backing materials that technical field of semiconductors is commonly used.
Wherein, sealing cap silicon chip 101 is formed with germanium bonded layer 104, pitch post 10, flash groove 106 and micro mechanical structure protection chamber 105; Device silicon chip 201 is formed with aluminium bonded layer 202 and micro mechanical structure district 203.Wherein, the aluminium bonded layer 202 on device silicon chip 201 is bonded together with the germanium bonded layer 104 on sealing cap silicon chip 101, and the micro mechanical structure structural area 203 on device silicon chip 201 is isolated with external environment condition.Aluminium bonded layer 202 and germanium bonded layer 104 such as can adopt eutectic bonding technique to be bonded together, but are not limited to this.
Wherein, in micro mechanical structure district 203, movable structure can be formed with, such as, movable structure in accelerometer, inertial sensor.Micro mechanical structure protection chamber 105 is cavitys of an indent, and its position is corresponding with the position in micro mechanical structure district 203, and after bonding, micro mechanical structure protection chamber 105 is positioned at above micro mechanical structure district 203.
The surface of this pitch post 10 self-sealing cap silicon chip 101 is stretched out, and after bonding, the end of pitch post 10 contacts with device silicon chip 201.The quantity of pitch post 10 can be one or more, and multiple pitch posts 10 can be distributed in the zones of different of sealing cap silicon chip 101.Pitch post 10 has default height, thus in bonding process, make the pressure that is subject in each zones of different comparatively even, the aluminium germanium lateral extension amount caused by pressure in bonding process can be controlled, and the THICKNESS CONTROL of the aluminium germanium bonded layer that aluminium bonded layer can be formed with germanium bonded layer bonding is identical with the height of pitch post 10, namely aluminium germanium bonded layer also has default height, is conducive to ensureing sealing.
This pitch post 10 can be multilayer lamination structure, such as, can be the stacked structure of silica membrane 102 and silicon nitride film 103, but be not limited to this.
As a preferred embodiment, this sealing cap silicon chip 101 also has the flash groove 106 of indent, this flash groove 106, between germanium bonded layer 104 and micro mechanical structure district 203, is protected between chamber 105 at germanium bonded layer 104 and micro mechanical structure in other words.Further, in the example shown in Fig. 1, flash groove 106 is between germanium bonded layer 104 and pitch post 10, and pitch post 10 is between flash groove 106 and micro mechanical structure protection chamber 105.Preferably, flash groove 106 and micro mechanical structure protection chamber 105 can be formed by same step etching technics, and the two can have the identical degree of depth.
In bonding process; lateral extension can be there is after aluminium, germanium bonded layer fusing pressurized; the part that lateral extension is overflowed will be limited in flash groove 106; micro mechanical structure district 203 can not be had influence on; when especially having movable structure in micro mechanical structure district 203, flash groove 106 can protect movable structure unaffected.
In a preferred example, flash groove 106 and the distance between germanium bonded layer 104 and pitch post 10 are 30 μm ~ 50 μm; The degree of depth of flash groove 106 is 10 μm ~ 100 μm; The width of flash groove is 20 μm ~ 50 μm; The width of pitch post 10 is 20 μm ~ 60 μm; The height (or being called thickness) of silica membrane 102 is 1000nm ~ 2000nm, and the height (or being called thickness) of silicon nitride film 103 is 100nm ~ 200nm.Certainly, above-mentioned parameter is only the parameter in preferred embodiment, and those skilled in the art can do suitable adjustment to these parameters according to actual needs.
With reference to figure 2, the manufacture method of the MEMS aluminium germanium bonding structure of the present embodiment comprises the steps:
Step S11, provides device substrate and sealing cap substrate;
Step S12, described sealing cap substrate is formed germanium bonded layer and pitch post, to form sealing cap silicon chip;
Step S13, described device substrate is formed aluminium bonded layer and micro mechanical structure district, to form device silicon chip;
Step S14, described sealing cap silicon chip is formed the flash groove of indent, and described flash groove is between described germanium bonded layer and pitch post, and described pitch post is between described flash groove and micro mechanical structure district;
Step S15, carries out bonding to described germanium bonded layer and described aluminium bonded layer, and to make described sealing cap silicon chip and device silicon chip be bonded together, after bonding, the end of described pitch post contacts with described device silicon chip.
Be described in detail below in conjunction with Fig. 3 to Fig. 7.
With reference to figure 3, provide sealing cap substrate 100, this sealing cap substrate 100 forms pitch post 10, this sealing cap substrate 100 can be silicon substrate, but is not limited to this, can also be other substrates conventional in CMOS technology, MEMS technology.
The forming process of this pitch post 10 can comprise: on sealing cap substrate 100, form silica membrane 102, such as can adopt the thermal oxidation technology of microelectronic integrated circuit routine, temperature is about 1100 DEG C, time is about 12 hours, with wet-oxygen oxidation technique silicon dioxide thin film growth 102, the thickness of this silica membrane 102 can be such as 1000nm ~ 2000nm; On silica membrane 102, form silicon nitride film 103 afterwards, such as, can adopt the method for low pressure gas phase deposition, silica membrane 102 grows one deck silicon nitride film 103, the thickness of this silicon nitride film 103 can be such as 100nm ~ 200nm; Afterwards, adopt conventional photoetching and etching technics to carry out graphically to silica membrane 102 and silicon nitride film 103, such as can adopt dry etching, etching gas can be CF
4, CH
3the mist of F, Ar.
Silicon nitride film 103 can protect the height of silica membrane 102 not change in the clear process of follow-up hydrofluoric acid, makes whole pitch post 10 keep the height preset.Pitch post 10 can fix in follow-up bonding process aluminium, germanium bonded layer bonding shaping after the thickness of the mutual crucible zone of metal, make the integral thickness of the bonded layer after bonding by the impact of bonding pressure.
With reference to figure 4, sealing cap substrate 100 forms germanium bonded layer 104.Such as, the evaporation of the germanium of microelectronic integrated circuit routine or germanium sputtering technology can be adopted to form germanium layer, and then utilize conventional photoetching and dry etch process to carry out graphically, to form germanium bonded layer 104 to germanium layer.In order to control the cleanliness factor on sealing cap substrate 100 surface, germanium evaporation or germanium sputtering technology before, can carry out the cleaning of hydrofluoric acid to sealing cap substrate 100 surface, the top due to pitch post 10 has silicon nitride film 103, and the height of pitch post 10 can not change in the cleaning process of hydrofluoric acid.Distance between germanium bonded layer 104 and pitch post 10 can be 80 μm ~ 150 μm.
Preferably, the present embodiment adopts germanium evaporation technology to form germanium layer, and the thickness of the germanium layer that evaporation is formed can be such as 500nm ~ 1500nm, is preferably 1000nm; And then adopt conventional photoetching and dry etch process, carry out graphically to germanium layer, form germanium bonded layer 104, the width of germanium bonded layer 104 can be 100 μm ~ 300 μm.
With reference to figure 5, sealing cap substrate is etched, to form flash groove 106 and the micro mechanical structure protection chamber 105 of indent, thus form sealing cap silicon chip 101.Flash groove 106 is between germanium bonded layer 104 and micro mechanical structure protection chamber 105, and further, flash groove 106 such as can between germanium bonded layer 104 and pitch post 10.
Further, the photoetching process of microelectronic integrated circuit routine can be adopted, sealing cap substrate is formed the window in flash groove 106 and micro mechanical structure protection chamber 105; Adopt dry etch process to etch the sealing cap substrate in window afterwards, etching gas can be such as SF
6and C
4f
8, to form flash groove 106 and micro mechanical structure protection chamber 105.Such as; the Bosch deep etching technique that the etching that MEMS industry can be adopted to know, deposition, etching repeat; sealing cap substrate is formed flash groove 106 and micro mechanical structure protection chamber 105; its degree of depth is 10 μm ~ 100 μm; be preferably 80 μm, and the width of flash groove 106 is preferably 20 μm ~ 50 μm.The size in micro mechanical structure protection chamber 105 can set according to the needs of product, and the distance between micro mechanical structure protection chamber 105 and pitch post 10 is 50 μm ~ 100 μm.
With reference to figure 6, provide device substrate 200, this device substrate 200 forms aluminium bonded layer 202, this device substrate 200 can be silicon substrate, but is not limited to this, can also be other substrates conventional in CMOS technology, MEMS technology.The position of aluminium bonded layer 202 is corresponding with the position of the germanium bonded layer 104 on the sealing cap silicon chip 101 shown in Fig. 5, so that follow-up bonding.
The forming process of this aluminium bonded layer 202 can comprise: adopt the aluminum evaporation of microelectronic integrated circuit routine or sputtered aluminum technique to form aluminium lamination, the thickness of this aluminium lamination can be such as 500nm ~ 2000nm, is preferably 1500nm; And then carry out graphically with conventional photoetching and metal dry etch process to aluminium lamination, to form aluminium bonded layer 202, the width of aluminium bonded layer 202 is such as 100 μm ~ 300 μm.In addition, this aluminium lamination also can draw layer as the metal of micro mechanical device, in the etching technics forming aluminium bonded layer 202, can also etch the lead-in wire forming device in the lump on aluminium lamination.
With reference to figure 7, form micro mechanical structure district 203 on the device substrate, this micro mechanical structure district 203 such as can comprise movable structure.The position in this micro mechanical structure district 203 protects the position in chamber 105 corresponding with the micro mechanical structure in the sealing cap silicon chip 101 shown in Fig. 5.
Furthermore, photoetching conventional in MEMS technology, etching and hydrofluoric acid gas fumigation process can be adopted to make micro mechanical structure district 203, such as, make the movable structure of suspension.Spacing between this micro mechanical structure district 203 and aluminium bonded layer 202 can be 150 μm ~ 310 μm.
With reference to figure 5 and Fig. 7, bonding is carried out to sealing cap silicon chip 101 and device silicon chip 201, specifically, the germanium bonded layer 104 on sealing cap silicon chip 101 and the aluminium bonded layer 202 on device silicon chip 201 are bonded together.
Furthermore; the bonding technology of MEMS industry routine can be adopted to carry out aluminium germanium eutectic bonding; bonding temperature controls between 425 DEG C ~ 445 DEG C; aluminium and germanium mutually fuse and sealing cap silicon chip 101 and device silicon chip 201 are bonded together in this temperature range, make the device architecture of micromechanics and external environment condition obtain insulation blocking.The MEMS aluminium germanium bonding structure formed after bonding as shown in Figure 1.
The technical scheme of the embodiment of the present invention can be used in the multiple device such as accelerometer, inertial sensor, also goes in addition on the eutectic bonding handicraft product of non-MEMS.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Therefore, every content not departing from technical solution of the present invention, just according to technical spirit of the present invention to any simple amendment made for any of the above embodiments, equivalent conversion, all still belong in the protection domain of technical solution of the present invention.
Claims (16)
1. a MEMS aluminium germanium bonding structure, comprising:
Device silicon chip, this device silicon chip has micro mechanical structure district and aluminium bonded layer;
Sealing cap silicon chip, this sealing cap silicon chip has germanium bonded layer, this germanium bonded layer and described aluminium bonded layer bonding;
It is characterized in that, described sealing cap silicon chip also has the pitch post stretched out from described sealing cap silicon chip, the end of this pitch post contacts with described device silicon chip, described sealing cap silicon chip also has the flash groove of indent, described flash groove is between described germanium bonded layer and pitch post, described pitch post is between described flash groove and micro mechanical structure district, and wherein, described pitch post is multilayer lamination structure.
2. MEMS aluminium germanium bonding structure according to claim 1, is characterized in that, described flash groove and the distance between described germanium bonded layer and pitch post are 30 μm ~ 50 μm.
3. MEMS aluminium germanium bonding structure according to claim 1, is characterized in that, the degree of depth of described flash groove is 10 μm ~ 100 μm, and the width of described flash groove is 20 μm ~ 50 μm.
4. MEMS aluminium germanium bonding structure according to claim 1, is characterized in that, the width of described pitch post is 20 μm ~ 60 μm.
5. MEMS aluminium germanium bonding structure according to claim 1, it is characterized in that, described pitch post comprises:
Silica membrane, is positioned on this sealing cap silicon chip;
Silicon nitride film, is stacked on this silica membrane.
6. MEMS aluminium germanium bonding structure according to claim 5, is characterized in that, the height of described silica membrane is 1000nm ~ 2000nm, and the height of described silicon nitride film is 100nm ~ 200nm.
7. MEMS aluminium germanium bonding structure according to any one of claim 1 to 6, is characterized in that, described sealing cap silicon also has the micro mechanical structure protection chamber of indent, the position in this micro mechanical structure protection chamber is corresponding with the position in described micro mechanical structure district.
8. a manufacture method for MEMS aluminium germanium bonding structure, is characterized in that, comprising:
Device substrate and sealing cap substrate are provided;
Described sealing cap substrate forms germanium bonded layer and pitch post, to form sealing cap silicon chip;
Described device substrate forms aluminium bonded layer and micro mechanical structure district, to form device silicon chip;
Described sealing cap silicon chip is formed the flash groove of indent, and described flash groove is between described germanium bonded layer and pitch post, and described pitch post is between described flash groove and micro mechanical structure district, and described pitch post is multilayer lamination structure;
Carry out bonding to described germanium bonded layer and described aluminium bonded layer, to make described sealing cap silicon chip and device silicon chip be bonded together, after bonding, the end of described pitch post contacts with described device silicon chip.
9. the manufacture method of MEMS aluminium germanium bonding structure according to claim 8, is characterized in that, described flash groove and the distance between described germanium bonded layer and pitch post are 30 μm ~ 50 μm.
10. the manufacture method of MEMS aluminium germanium bonding structure according to claim 8, is characterized in that, the degree of depth of described flash groove is 10 μm ~ 100 μm, and the width of described flash groove is 20 μm ~ 50 μm.
The manufacture method of 11. MEMS aluminium germanium bonding structures according to claim 8; it is characterized in that; when forming described flash groove, on described sealing cap substrate, also form micro mechanical structure protection chamber in the lump, the position in this micro mechanical structure protection chamber is corresponding with the position in described micro mechanical structure district.
The manufacture method of 12. MEMS aluminium germanium bonding structures according to claim 11, is characterized in that, the formation method in described flash groove and micro mechanical structure protection chamber comprises:
Adopt photoetching process to form window on described sealing cap substrate, the position of this window corresponds to the position of described flash groove and micro mechanical device;
Dry etch process is adopted to etch the sealing cap substrate in described window, to form described flash groove and micro mechanical device.
The manufacture method of 13. MEMS aluminium germanium bonding structures according to claim 8, is characterized in that, the width of described pitch post is 20 μm ~ 60 μm.
The manufacture method of 14. MEMS aluminium germanium bonding structures according to claim 8, it is characterized in that, the formation method of described pitch post comprises:
Described sealing cap substrate forms silica membrane;
Described silica membrane forms silicon nitride film;
Described silicon nitride film and silica membrane are etched, to form described pitch post.
The manufacture method of 15. MEMS aluminium germanium bonding structures according to claim 14, it is characterized in that, the height of described silica membrane is 1000nm ~ 2000nm, and the height of described silicon nitride film is 100nm ~ 200nm.
The manufacture method of the MEMS aluminium germanium bonding structure according to any one of 16. according to Claim 8 to 15, is characterized in that, temperature when carrying out bonding is 425 DEG C ~ 445 DEG C.
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| CN103979481A (en) | 2014-08-13 |
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