CN104409375B - Bonding method and manufacturing method of semiconductor device - Google Patents
Bonding method and manufacturing method of semiconductor device Download PDFInfo
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- CN104409375B CN104409375B CN201410695956.8A CN201410695956A CN104409375B CN 104409375 B CN104409375 B CN 104409375B CN 201410695956 A CN201410695956 A CN 201410695956A CN 104409375 B CN104409375 B CN 104409375B
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000009835 boiling Methods 0.000 claims abstract description 15
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 239000000376 reactant Substances 0.000 claims description 23
- 238000011282 treatment Methods 0.000 claims description 13
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical group Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- -1 aluminum-germanium Chemical compound 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 238000010517 secondary reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The present application provides a bonding method for bonding a first substrate and a second substrate into a single body, the bonding method including: processing the first substrate with the bonding metal layer deposited on the surface so as to generate a covering on the surface of the metal layer; adjusting the temperature of the environment in which the first substrate and the second substrate are located to a first temperature to remove the cover from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the cover; maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole. According to the application, the covering layer is formed on the surface of the metal layer for bonding, and the covering layer is volatilized in the bonding process to expose the clean surface of the metal layer, so that the effect of eutectic bonding is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to a bonding method and a method for manufacturing a semiconductor device.
Background
The Micro-electro-Mechanical-System (MEMS) packaging technology is an important research direction in the MEMS research field, on one hand, the packaging can prevent the MEMS product from being affected by dust, moisture and the like on the movable structure, and on the other hand, the vacuum or hermetic packaging can also change the internal damping condition of the MEMS product, thereby improving the performance of the product.
Wafer level packaging technology is a main solution for achieving high performance, low cost and mass production of MEMS products, and wafer level packaging can be achieved by using wafer level keys and technologies, for example, a Cap (Cap) sheet is added on a MEMS Device (Device) sheet and the Cap sheet and the Device sheet are bonded to complete packaging, so that the wafer level packaging technology has the advantage of mass production and can reduce packaging cost.
Eutectic bonding is also one of the important types of wafer-level bonding techniques. In eutectic bonding, a metal layer for bonding can be deposited on the device chip, the cover plate is attached to the surface of the metal layer under certain pressure, and materials of the metal layer and the cover plate are fused with each other at a eutectic temperature to form firm bonding. Eutectic bonding is increasingly used in MEMS technology because it not only provides good package sealing but also wire interconnection, for example, typical eutectic bonding may be aluminum-germanium (Al-Ge) bonding, gold-silicon (Au-Si) bonding, etc.
For some bonding metal layers, such as aluminum, the surface is easily oxidized naturally, and a dense high-hardness high-melting-point oxide layer is formed to prevent eutectic bonding. Therefore, special treatments such as reduction and ion bombardment are required before bonding to remove these oxide layers, thereby facilitating eutectic bonding.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
The inventor of the present application finds that the existing technology for removing the oxide layer is high in cost, and in the process of transferring the processed device wafer to the bonding machine, a new oxide layer is inevitably formed, which may still affect the effect of eutectic bonding.
A cover layer is formed on the surface of a metal layer for bonding, and the cover layer is volatilized in the bonding process to expose the surface of the clean metal layer, so that the effect of eutectic bonding is improved.
According to an aspect of an embodiment of the present application, there is provided a bonding method for bonding a first substrate and a second substrate into a single body, the bonding method including:
processing the first substrate with the bonding metal layer deposited on the surface so as to generate a covering on the surface of the metal layer;
adjusting the temperature of the environment in which the first substrate and the second substrate are located to a first temperature to remove the cover from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the cover;
maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole.
According to an aspect of an embodiment of the present application, wherein,
the temperature of the environment in which the first substrate is located is adjusted to a second temperature while the process is performed, wherein the second temperature is below the boiling point of the cover.
According to an aspect of an embodiment of the present application, wherein,
and in the treatment, introducing a reactant into the environment where the first substrate is located, wherein the reactant reacts with the oxide layer on the surface of the metal layer to generate the covering.
According to an aspect of an embodiment of the present application, wherein,
the reactant also reacts with the metal layer to produce the covering.
According to an aspect of an embodiment of the present application, wherein,
the reactant is hydrogen bromide (HBr) or hydrogen chloride (HCl).
According to an aspect of an embodiment of the present application, wherein,
the treatment is carried out for a period of time of 1 to 10 seconds.
According to an aspect of an embodiment of the present application, wherein,
the metal layer is made of aluminum, and the second substrate is made of germanium.
According to an aspect of an embodiment of the present application, there is provided a manufacturing method of a semiconductor device, the manufacturing method including:
depositing a bonding metal layer on the surface of a first substrate on which the micro-electromechanical structure is formed;
performing first treatment on the first substrate deposited with the metal layer to enable the surface of the metal layer to generate a covering matter;
adjusting the temperature of the environment in which the first substrate and the second substrate are located to a first temperature to remove the covering from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the covering;
maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole;
and carrying out second treatment on the first substrate and the second substrate which are integrally bonded to form the semiconductor device.
The beneficial effect of this application lies in: a covering layer is formed on the surface of the metal layer for bonding, and the covering layer is volatilized in the bonding process to expose the clean surface of the metal layer, so that the effect of eutectic bonding is improved.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 is a schematic flow chart of a bonding method in an embodiment of the present application;
FIG. 2 is a schematic process flow diagram of a bonding method according to an embodiment of the present application
Fig. 3 is a schematic flow chart of a method for manufacturing a semiconductor device in the embodiment of the present application.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
Example 1
The embodiment 1 of the present application provides a bonding method for bonding a first substrate and a second substrate into a whole.
Fig. 1 is a schematic flow chart of a bonding method in an embodiment of the present application, and as shown in fig. 1, the bonding method includes:
s101, processing the first substrate with the bonding metal layer deposited on the surface to enable the surface of the metal layer to generate a covering;
s102, adjusting the temperature of the environment in which the first substrate and the second substrate are located to a first temperature to remove the covering from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the covering;
s103, maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole.
In the embodiment of the application, the covering layer is formed on the surface of the metal layer for bonding, and the covering layer is volatilized in the bonding process to expose the clean surface of the metal layer, so that the natural oxidation layer on the surface of the metal layer can be removed, and the effect of eutectic bonding is improved.
In this embodiment, the first substrate and the second substrate may be wafers commonly used in the semiconductor manufacturing field, such as a Silicon wafer, a Silicon-On-Insulator (SOI) wafer, a Silicon germanium wafer, a germanium wafer, or a Gallium Nitride (GaN) wafer; the wafer may be a wafer that has not been processed by the semiconductor process, or may be a wafer that has been processed by a process, such as ion implantation, etching, and/or diffusion, for example, which is not limited in this embodiment.
In the embodiment of the present application, the first substrate may be a device wafer on which a micro-electromechanical device is formed, and the second substrate may be a cover wafer; however, the present embodiment is not limited thereto, and the second substrate may be a device wafer on which the micro-electromechanical device is formed, and the first substrate may be a cover wafer, or both the first substrate and the second substrate may have the micro-electromechanical device formed thereon.
In this embodiment, the bonding metal layer may be a metal layer commonly used in eutectic bonding, for example, aluminum, gold, copper, or the like, and this embodiment is not particularly limited thereto.
In this embodiment, the first substrate may be subjected to the process of step S101 at a specific temperature, that is, the temperature of the environment in which the first substrate is located may be adjusted to the second temperature. The second temperature may be lower than the boiling point of the coating, so that the coating protects the surface of the metal layer and prevents further oxidation of the surface of the metal layer by promoting the process and preventing the generated coating from volatilizing. For example, in the case that the boiling point of the covering material is 264 ℃, in step S101, the first substrate may be placed in a reaction chamber, and the temperature of the reaction chamber is controlled to be 100 ℃ to 200 ℃, so as to form a covering layer on the surface of the metal layer and prevent the covering layer from volatilizing.
In this embodiment, in the step S101, a reactant may be introduced into the environment where the first substrate is located, so that the reactant reacts with the oxide layer on the surface of the metal layer to form the covering, so as to convert the oxide layer into a covering layer, thereby removing the oxide layer on the surface of the metal layer. In addition, the reactant may react with the metal layer to form the covering as well.
For example, when the material of the bonding metal layer is aluminum (Al), in the step S101, gaseous hydrogen bromide (HBr) or the like may be introduced into the reaction chamber in which the first substrate is located, so that the hydrogen bromide (HBr) or hydrogen chloride (HCl) reacts with the oxide layer on the surface of the metal layer and also reacts with the metal layer, for example, when the metal layer is aluminum (Al), the oxide layer is aluminum oxide (Al)2O3) When the reaction is carried out, the following reactions (1) and (2) may be carried out:
Al2O3+6HBr＝2AlBr3+3H2O (1)
2Al+6HBr＝2AlBr3+3H2(2)
in this embodiment, the reactant can also be, for example, hydrogen chloride (HCl), or a mixture of hydrogen chloride (HCl) and hydrogen bromide (HBr). Of course, the specific substance of the reactant is not particularly limited in this embodiment, and the corresponding reactant may be selected according to the kind of the substance of the oxide layer on the surface of the metal layer, as long as the boiling point of the generated covering is higher than the second temperature in step S101 and lower than the first temperature in step S103.
In this embodiment, the processing time in step S101 may be controlled to be a suitable time, if the processing time is too short, the oxide layer on the surface of the metal layer may not be sufficiently removed, and if the processing time is too long, the reaction degree between the above reactant and the metal layer may increase, thereby causing severe corrosion to the metal layer. For example, the time of the treatment may be 1 to 10 seconds. However, the present embodiment is not limited thereto, and the time of the treatment may be controlled according to the difference between the reactant and the metal layer material, the concentration of the reactant and/or the amount of the introduced reactant, and other factors, as long as the reaction between the reactant and the oxide layer on the surface of the metal layer is the primary reaction, and the reaction between the reactant and the metal layer is the secondary reaction.
In this embodiment, in step S102, the temperature of the environment in which the first substrate and the second substrate are located may be adjusted to a first temperature to remove the cover from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the cover. For example, where the boiling point of the covering is 264 ℃, the first temperature may be set to 430 ℃ and 450 ℃. However, the embodiment is not limited thereto, and the first temperature may be other temperature as long as the first temperature is higher than the boiling point of the cover.
In this embodiment, in step 102, the environment in which the first substrate and the second substrate are located may be evacuated, for example, the pressure of the environment may be set to be 0.1 millibar (mba) or less, thereby enabling bonding in a vacuum environment. In addition, the environment in which the first substrate and the second substrate are located may be filled with a chemically stable gas without vacuum pumping to maintain the environment at a certain pressure, for example, nitrogen (N) may be introduced into the environment2) So that the ambient pressure is around 1 bar (ba).
In this embodiment, in step S103, pressure is applied to the first substrate and the second substrate while maintaining the first temperature, so as to bond the two. The pressure may be, for example, 5-30 kilo-newtons (KN) and the time for applying the pressure may be, for example, 5-30 minutes, although the application is not so limited and other pressure values and times for applying the pressure are possible.
In this embodiment, after step S103, the ambient temperature may be decreased, and the pressure may be released, for example, the pressure is released when the temperature is decreased to 410-. Subsequently, nitrogen (N) may be introduced into the environment in which the first and second substrates are located2) And relaying the environmentAnd continuously cooling to room temperature, thereby preventing large thermal stress from being generated between the first substrate and the second substrate which are bonded together.
According to the embodiment of the application, the metal layer for bonding is processed, the covering layer is formed on the surface of the metal layer, and the covering layer is volatilized in the bonding process to expose the clean surface of the metal layer, so that the natural oxidation layer on the surface of the metal layer can be removed, and the effect of eutectic bonding is improved; furthermore, by controlling the time for processing the bonding metal layer, the native oxide layer can be sufficiently removed, and the corrosion of the metal layer due to the processing can be reduced.
Next, the bonding method of the present embodiment will be described with reference to specific examples.
Fig. 2 is a schematic process flow diagram of a bonding method according to an embodiment of the present application.
As shown in fig. 2(a), the first substrate 201 having the bonding metal layer 202 deposited on the surface thereof is processed to form a coating on the surface of the metal layer.
Wherein the first substrate 201 may be a Device (Device) sheet having a micro-electromechanical structure formed thereon, and the metal layer is an aluminum layer. The processing can be completed in a machine of the dry etching machine, for example, the first substrate 201 can be placed in a cavity of the dry etching machine, the temperature of the cavity of the dry etching machine can be controlled at 100-200 ℃, hydrogen bromide (HBr) with the air pressure of 0-100mbar is introduced into the cavity, the first substrate 201 is placed in the cavity, and the residence time is 1-10 seconds, so that the natural oxide layer 203 on the surface of the metal layer reacts with the hydrogen bromide (HBr) to generate aluminum tribromide (AlBr)3)204, the aluminum tribromide produced prevents the aluminum surface from contacting air, thereby preventing oxidation; also, the residence time of the first substrate within the chamber can be adjusted so that all of the alumina on the surface of the metal layer 202 is removed.
As shown in fig. 2(B), the temperature of the first substrate and the second substrate environment is adjusted to a first temperature to remove the cover from the surface of the metal layer.
The second substrate 205 may be, for example, a germanium sheet having a germanium layer 206 formed on a surface thereof. The step can be performed in a cavity of a bonding machine, for example, the processed first substrate and the second substrate are placed into a bonding cavity of the bonding machine, the temperature is raised to 450-; meanwhile, for the device needing vacuum, the bonding cavity can be vacuumized, so that the air pressure is below 0.1mba, and for the device not needing vacuum, nitrogen can be introduced before pressurization to enable the air pressure in the bonding cavity to be about 1ba, so that the air pressure in the wafer bonding cavity meets the requirements of the device.
Next, a pressure of 5-30KN may be applied to the first substrate 201 and the second substrate 205 to attach the metal layer 202 to the germanium layer 206, and the pressure is maintained for 5-30 minutes while maintaining the temperature of the current bond cavity; subsequently, the temperature in the bonding cavity can be reduced to 410-430 ℃, and the pressure can be released; and then introducing nitrogen into the bonding cavity, continuously cooling to room temperature, taking out the first substrate and the second substrate which are bonded together from the machine table, and putting the first substrate and the second substrate into a wafer box for later use.
Example 2
Embodiment 2 of the present application provides a method for manufacturing a semiconductor device having the bonding method described in embodiment 1.
Fig. 3 is a schematic flowchart of a method of manufacturing a semiconductor device in an embodiment of the present application, and as shown in fig. 3, the method includes:
s301, depositing a bonding metal layer on the surface of a first substrate with a micro-electromechanical structure;
s302, carrying out first treatment on the first substrate deposited with the metal layer to enable a covering to be generated on the surface of the metal layer;
s303, adjusting the temperature of the environment in which the first substrate and the second substrate are positioned to a first temperature so as to remove the covering from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the covering;
s304, maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole;
and S305, carrying out second treatment on the first substrate and the second substrate which are integrally bonded to form a semiconductor device.
In the present embodiment, steps S302 to S304 correspond to steps S101 to S103 in embodiment 1, respectively, and the description of the present embodiment will not be repeated.
In the present embodiment, the prior art can be referred to as step S301 and the process method for forming the micro-electromechanical structure. The second processing in step S305 may be, for example, cutting, wire bonding, and/or packaging, and the specific implementation manner of the second processing may refer to the existing semiconductor manufacturing process, which is not described in detail in this embodiment of the present application.
According to the embodiment of the application, the metal layer for bonding is processed, the covering layer is formed on the surface of the metal layer, and the covering layer is volatilized in the bonding process to expose the clean surface of the metal layer, so that the natural oxidation layer on the surface of the metal layer can be removed, and the effect of eutectic bonding is improved; furthermore, by controlling the time for processing the bonding metal layer, the native oxide layer can be sufficiently removed, and the corrosion of the metal layer due to the processing can be reduced.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (8)
1. A bonding method for bonding a first substrate and a second substrate together, the bonding method comprising:
processing the first substrate with the bonding metal layer deposited on the surface so as to generate a covering on the surface of the metal layer;
adjusting the temperature of the environment in which the first substrate and the second substrate are located to a first temperature to remove the cover from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the cover;
maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole,
wherein,
and in the treatment, introducing a reactant into the environment where the first substrate is located, wherein the reactant reacts with the oxide layer on the surface of the metal layer to generate the covering.
2. The bonding method according to claim 1,
the temperature of the environment in which the first substrate is located is adjusted to a second temperature while the process is performed, wherein the second temperature is below the boiling point of the cover.
3. The bonding method according to claim 1,
the reactant also reacts with the metal layer to produce the covering.
4. The bonding method according to claim 1,
the reactant is hydrogen bromide (HBr) or hydrogen chloride (HCl).
5. The bonding method according to claim 1,
the treatment is carried out for a period of time of 1 to 10 seconds.
6. The bonding method according to claim 1,
the metal layer is made of aluminum, and the second substrate is made of germanium.
7. A method of manufacturing a semiconductor device, the method comprising:
depositing a bonding metal layer on the surface of a first substrate on which the micro-electromechanical structure is formed;
performing first treatment on the first substrate deposited with the metal layer to enable the surface of the metal layer to generate a covering matter;
adjusting the temperature of the environment in which the first substrate and the second substrate are located to a first temperature to remove the covering from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the covering;
maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole;
performing a second process on the first substrate and the second substrate bonded as a single body to form a semiconductor device,
wherein,
and in the first treatment, introducing a reactant into the environment where the first substrate is located, wherein the reactant reacts with the oxide layer on the surface of the metal layer to generate the covering.
8. The manufacturing method of the semiconductor device according to claim 7,
the reactant is hydrogen bromide (HBr) or hydrogen chloride (HCl).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410695956.8A CN104409375B (en) | 2014-11-26 | 2014-11-26 | Bonding method and manufacturing method of semiconductor device |
| PCT/CN2015/091660 WO2016082631A1 (en) | 2014-11-26 | 2015-10-10 | Bonding method and semiconductor device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410695956.8A CN104409375B (en) | 2014-11-26 | 2014-11-26 | Bonding method and manufacturing method of semiconductor device |
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| CN104409375A CN104409375A (en) | 2015-03-11 |
| CN104409375B true CN104409375B (en) | 2017-03-29 |
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| CN201410695956.8A Active CN104409375B (en) | 2014-11-26 | 2014-11-26 | Bonding method and manufacturing method of semiconductor device |
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| CN (1) | CN104409375B (en) |
| WO (1) | WO2016082631A1 (en) |
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| CN104409375B (en) * | 2014-11-26 | 2017-03-29 | 上海新微技术研发中心有限公司 | Bonding method and manufacturing method of semiconductor device |
| CN112456436B (en) * | 2019-09-06 | 2024-07-16 | 上海新微技术研发中心有限公司 | Bonding method and bonding structure |
| CN111945124A (en) * | 2020-08-13 | 2020-11-17 | 气相科技(武汉)有限公司 | Preparation method of nonmetal/metal/nonmetal sandwich structure composite material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1462868A (en) * | 2003-06-13 | 2003-12-24 | 中国科学院上海微系统与信息技术研究所 | Isothermal solidification method for air-tight packing micro mechanical sensor |
| CN1839462A (en) * | 2003-11-06 | 2006-09-27 | 松下电器产业株式会社 | Method for bonding substrate, bonded substrate, and direct bonded substrate |
| CN103979481A (en) * | 2014-05-28 | 2014-08-13 | 杭州士兰集成电路有限公司 | MEMS aluminum and germanium bonding structure and manufacturing method thereof |
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| US8377798B2 (en) * | 2010-11-10 | 2013-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and structure for wafer to wafer bonding in semiconductor packaging |
| CN104409375B (en) * | 2014-11-26 | 2017-03-29 | 上海新微技术研发中心有限公司 | Bonding method and manufacturing method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1462868A (en) * | 2003-06-13 | 2003-12-24 | 中国科学院上海微系统与信息技术研究所 | Isothermal solidification method for air-tight packing micro mechanical sensor |
| CN1839462A (en) * | 2003-11-06 | 2006-09-27 | 松下电器产业株式会社 | Method for bonding substrate, bonded substrate, and direct bonded substrate |
| CN103979481A (en) * | 2014-05-28 | 2014-08-13 | 杭州士兰集成电路有限公司 | MEMS aluminum and germanium bonding structure and manufacturing method thereof |
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| WO2016082631A1 (en) | 2016-06-02 |
| CN104409375A (en) | 2015-03-11 |
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