CN104409375A - Bonding method and manufacturing method of semiconductor device - Google Patents
Bonding method and manufacturing method of semiconductor device Download PDFInfo
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- CN104409375A CN104409375A CN201410695956.8A CN201410695956A CN104409375A CN 104409375 A CN104409375 A CN 104409375A CN 201410695956 A CN201410695956 A CN 201410695956A CN 104409375 A CN104409375 A CN 104409375A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
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Abstract
The present application provides a bonding method for bonding a first substrate and a second substrate into a single body, the bonding method including: processing the first substrate with the bonding metal layer deposited on the surface so as to generate a covering on the surface of the metal layer; adjusting the temperature of the environment in which the first substrate and the second substrate are located to a first temperature to remove the cover from the surface of the metal layer, wherein the first temperature is higher than the boiling point of the cover; maintaining the first temperature, attaching the second substrate to the surface of the metal layer, and applying pressure to the first substrate and the second substrate to bond the first substrate and the second substrate into a whole. According to the application, the covering layer is formed on the surface of the metal layer for bonding, and the covering layer is volatilized in the bonding process to expose the clean surface of the metal layer, so that the effect of eutectic bonding is improved.
Description
Technical field
The application relates to technical field of manufacturing semiconductors, particularly relates to the manufacture method of a kind of bonding method and semiconductor device.
Background technology
MEMS (micro electro mechanical system) (Micro-Electronic-Mechanical-System, MEMS) encapsulation technology is an important research direction in MEMS research field, encapsulation can make MEMS product avoid being subject to the impact on movable structure such as dust, moisture on the one hand, also can change MEMS interiors of products damping situation by vacuum or level Hermetic Package on the other hand, improve the performance of product.
Wafer level packaging is the main solution route realizing MEMS product high-performance, low cost and mass, wafer-level packaging can adopt wafer scale key and technology to realize, such as, MEMS (Device) sheet adds capping (Cap) sheet and bonding is carried out to complete encapsulation to the two, therefore there is the advantage of batch, and can packaging cost be reduced.
In wafer scale bonding techniques, eutectic bonding is again a wherein important class.In eutectic bonding, device sheet can deposit bonding metal level, and be fitted on the surface of cover plate and this metal level under a certain pressure, under eutectic temperature, the material of metal level and cover plate fuses mutually, forms firmly bonding.Because eutectic bonding not only can provide good potting, and it is interconnected to carry out lead-in wire, thus be more and more applied in MEMS technology, such as, typical eutectic bonding can be aluminium-germanium (Al-Ge) bonding, gold silicon (Au-Si) bonding etc.
Such as, for some bonding metal level, aluminium, its surface easily autoxidation, generates the dystectic oxide layer of high rigidity of one deck densification thus prevents eutectic bonding.Therefore, need some to process especially before bonding, as reduction and Ions Bombardment etc., to remove these oxide layers, thus be beneficial to eutectic bonding.
Above it should be noted that, just conveniently to the technical scheme of the application, clear, complete explanation is carried out to the introduction of technical background, and facilitate the understanding of those skilled in the art to set forth.Only can not think that technique scheme is conventionally known to one of skill in the art because these schemes have carried out setting forth in the background technology part of the application.
Summary of the invention
Present inventor finds, the technical costs of existing removal oxide layer is higher, and, the device sheet after process is being transferred in the process of bonding board, also can inevitably form new oxide layer, still may have an impact to the effect of eutectic bonding.
The application provides the manufacture method of a kind of bonding method and semiconductor device, forms cover layer, and in bonding process, make this cover layer volatilize on the surface of bonding metal level, to expose clean layer on surface of metal, thus improves the effect of eutectic bonding.
According to an aspect of the embodiment of the present application, provide a kind of bonding method, for making the first substrate and the second substrate bonding be integrated, this bonding method comprises:
Described first substrate that effects on surface deposits bonding metal level processes, to make the Surface Creation covering of described metal level;
The temperature of environment residing for described first substrate and described second substrate is adjusted to the first temperature, and with by the surface removal of described covering from described metal level, wherein, described first temperature is higher than the boiling point of described covering;
Maintain this first temperature, is fitted in the surface of described second substrate and described metal level, and pressure is applied to described first substrate and described second substrate, be integrated to make described first substrate and described second substrate bonding.
According to an aspect of the embodiment of the present application, wherein,
When carrying out described process, residing for described first substrate, the temperature of environment is adjusted to the second temperature, and wherein, described second temperature is lower than the boiling point of described covering.
According to an aspect of the embodiment of the present application, wherein,
In described process, pass into reactant to environment residing for described first substrate, wherein, the oxide layer of described reactant and described layer on surface of metal reacts, to generate described covering.
According to an aspect of the embodiment of the present application, wherein,
Described reactant also reacts with described metal level, to generate described covering.
According to an aspect of the embodiment of the present application, wherein,
Described reactant is hydrogen bromide (HBr) or hydrogen chloride (HCl).
According to an aspect of the embodiment of the present application, wherein,
The time of carrying out described process is 1-10 second.
According to an aspect of the embodiment of the present application, wherein,
The material of described metal level is aluminium, and the material of described second substrate is germanium.
According to an aspect of the embodiment of the present application, provide a kind of manufacture method of semiconductor device, this manufacture method comprises:
Be formed with the first substrate surface deposition bonding metal level of micro electromechanical structure;
First process is carried out to described first substrate depositing described metal level, to make the Surface Creation covering of described metal level;
The temperature of environment residing for described first substrate and the second substrate is adjusted to the first temperature, and with by the surface removal of described covering from described metal level, wherein, described first temperature is higher than the boiling point of described covering;
Maintain this first temperature, is fitted in the surface of described second substrate and described metal level, and pressure is applied to described first substrate and described second substrate, be integrated to make described first substrate and described second substrate bonding;
Described first substrate that para-linkage is integrated and described second substrate carry out the second process, to form semiconductor device.
The beneficial effect of the application is: form cover layer on the surface of bonding metal level, and in bonding process, make this cover layer volatilize, and to expose clean layer on surface of metal, thus improves the effect of eutectic bonding.
With reference to explanation hereinafter and accompanying drawing, disclose in detail the particular implementation of the application, the principle specifying the application can adopted mode.Should be appreciated that, thus the execution mode of the application is not restricted in scope.In the spirit of claims and the scope of clause, the execution mode of the application comprises many changes, amendment and is equal to.
The feature described for a kind of execution mode and/or illustrate can use in one or more other execution mode in same or similar mode, combined with the feature in other execution mode, or substitutes the feature in other execution mode.
Should emphasize, term " comprises/comprises " existence referring to feature, one integral piece, step or assembly when using herein, but does not get rid of the existence or additional of one or more further feature, one integral piece, step or assembly.
Accompanying drawing explanation
Included accompanying drawing is used to provide the further understanding to the embodiment of the present application, which constitutes a part for specification, for illustrating the execution mode of the application, and comes together to explain the principle of the application with text description.Apparently, the accompanying drawing in the following describes is only some embodiments of the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.In the accompanying drawings:
Fig. 1 is a schematic flow sheet of bonding method in the embodiment of the present application;
Fig. 2 is the process flow diagram of the bonding method of the embodiment of the present application
Fig. 3 is a schematic flow sheet of the manufacture method of semiconductor device in the embodiment of the present application.
Embodiment
With reference to accompanying drawing, by specification below, the aforementioned and further feature of the application will become obvious.In the specification and illustrated in the drawings, specifically disclose the particular implementation of the application, which show the some embodiments of the principle that wherein can adopt the application, will be appreciated that, the application is not limited to described execution mode, on the contrary, the application comprises the whole amendments fallen in the scope of claims, modification and equivalent.
Embodiment 1
The embodiment of the present application 1 provides a kind of bonding method, is integrated for making the first substrate and the second substrate bonding.
Fig. 1 is a schematic flow sheet of bonding method in the embodiment of the present application, and as shown in Figure 1, this bonding method comprises:
S101, described first substrate that effects on surface deposits bonding metal level processes, to make the Surface Creation covering of described metal level;
S102, adjusts to the first temperature by the temperature of environment residing for described first substrate and described second substrate, and with by the surface removal of described covering from described metal level, wherein, described first temperature is higher than the boiling point of described covering;
S103, maintains this first temperature, is fitted on the surface of described second substrate and described metal level, and applies pressure to described first substrate and described second substrate, is integrated to make described first substrate and described second substrate bonding.
In the embodiment of the present application, form cover layer on the surface of bonding metal level, and in bonding process, make this cover layer volatilize, to expose clean layer on surface of metal, thereby, it is possible to remove the natural oxidizing layer of layer on surface of metal, thus improve the effect of eutectic bonding.
In the present embodiment, this first substrate and the second substrate can be wafer conventional in field of semiconductor manufacture, such as Silicon Wafer, isolate supports (Silicon-On-Insulator, SOI) wafer, germanium Silicon Wafer, germanium wafer or gallium nitride (Gallium Nitride, GaN) wafer etc.; Further, this wafer can be the wafer not carrying out semiconductor technology process, and also can be the wafer having carried out processing, such as carried out the wafer that the PROCESS FOR TREATMENT such as ion implantation, etching and/or diffusion are crossed, the present embodiment limit this.
In the embodiment of the present application, this first substrate can be the device sheet being formed with micro electro mechanical device, and this second substrate can be cover plate; But the present embodiment is not limited to this, the second substrate can be the device sheet being formed with micro electro mechanical device, and this first substrate can be cover plate, or, the first substrate and the second substrate are all formed with micro electro mechanical device.
In the present embodiment, this bonding metal level can be metal level conventional in eutectic bonding, and can be such as aluminium, gold or copper etc., the present embodiment do special restriction to this.
In the present embodiment, the process of step S101 can be carried out at a certain temperature to this first substrate, that is, the temperature of environment residing for this first substrate can be adjusted to the second temperature.This second temperature lower than the boiling point of this covering, therefore, can either promote the carrying out of this process, the covering of generation also can not be made to volatilize, thus covering is protected layer on surface of metal, prevent layer on surface of metal to be oxidized further.Such as, when the boiling point of covering at 264 DEG C, in step S101, this first substrate can be placed in reaction chamber, and the temperature controlling this reaction chamber is 100-200 DEG C, thus forms cover layer at layer on surface of metal, and prevent cover layer from volatilizing.
In the present embodiment, in the process of step S101, reactant can be passed into the environment residing for this first substrate, the oxide layer of this reactant and this layer on surface of metal is reacted, to generate this covering, thus this oxide layer is changed into cover layer, reach the object of the oxide layer removing this layer on surface of metal.In addition, this reactant also may react with metal level, same this covering of generation.
Such as, when the material of this bonding metal level is aluminium (Al), in the process of step S101, gaseous state hydrogen bromide (HBr) etc. can be passed into the reaction chamber residing for this first substrate, react with the oxide layer bromizating hydrogen (HBr) or hydrogen chloride (HCl) and layer on surface of metal, and, also react with metal level, such as, when metal level is aluminium (Al), oxide layer is aluminium oxide (Al
2o
3) time, above-mentioned reaction can as shown in the formula shown in (1) and (2):
Al
2O
3+6HBr＝2AlBr
3+3H
2O (1)
2Al+6HBr＝2AlBr
3+3H
2(2)
In the present embodiment, this reactant also can be such as hydrogen chloride (HCl), or, the mixture of hydrogen chloride (HCl) and hydrogen bromide (HBr).Certain the present embodiment does not do special restriction for the concrete material of this reactant, can according to the substance classes of the oxide layer of this layer on surface of metal, select corresponding reactant, as long as the boiling point of the covering generated is higher than the second temperature in step S101, and lower than the first temperature in step S103.
In the present embodiment, it can time of process in rate-determining steps S101 be suitable time, if the time of process is too short, possibly the oxide layer of layer on surface of metal cannot be made to be sufficiently removed, if the overlong time of process, the extent of reaction of above-mentioned reactant and metal level may be made to increase, thus more serious corrosion is caused to this metal level.Such as, the time of this process can be 1-10 second.But the present embodiment is not limited to this, can according to the factor such as the concentration of different, the reactant of reactant and metal layer material and/or the reaction volume passed into, control the time of this process, as long as make the reaction of the oxide layer of this reactant and layer on surface of metal be key reaction, and the reaction of this reactant and metal level is secondary reaction.
In the present embodiment, in step s 102, the temperature of environment residing for this first substrate and this second substrate can be adjusted to the first temperature, with by the surface removal of described covering from described metal level, wherein, described first temperature is higher than the boiling point of described covering.Such as, when the boiling point of this covering at 264 DEG C, this first temperature can be set to 430-450 DEG C.But the present embodiment is not limited to this, this first temperature can be other temperature, as long as this first temperature is higher than the boiling point of this covering.
In the present embodiment, in a step 102, can the environment residing for the first substrate and the second substrate be vacuumized, such as, can make the air pressure of environment be 0.1 millibar (mba) below, thereby, it is possible to carry out bonding under vacuum conditions.In addition, when not needing to vacuumize, also can be filled with the gas of stable chemical nature to the environment residing for the first substrate and the second substrate, with the air pressure making environment keep certain, such as, nitrogen (N can be passed into this environment
2), be 1 bar (ba) left and right to make ambient pressure.
In the present embodiment, in step s 103, when maintenance the first temperature, pressure is applied to the first substrate and the second substrate, to make the two bonding.This applied pressure can be such as 5-30 thousand Ns (KN), and the time applying this pressure can be such as 5-30 minute, and certainly, the application is not limited to this, can also be other force value and the time of exerting pressure.
In the present embodiment, after step s 103, ambient temperature can also be made to reduce, and release pressure, such as, when cooling to 410-430 DEG C release pressure.Subsequently, nitrogen (N can be passed into the environment residing for the first substrate and the second substrate
2), and make this environment continue to be cooled to room temperature, thus, prevent from producing larger thermal stress between the first substrate of being bonded together and the second substrate.
According to above-described embodiment of the application, processed by para-linkage metal level, cover layer is formed on the surface of this metal level, and in bonding process, make this cover layer volatilize, to expose clean layer on surface of metal, thereby, it is possible to remove the natural oxidizing layer of layer on surface of metal, improve the effect of eutectic bonding; Further, by controlling the time that para-linkage metal level carries out processing, can fully remove this natural oxidizing layer, and reducing the corrosion of this process to metal level.
Below, in conjunction with instantiation, the bonding method of the present embodiment is described.
Fig. 2 is the process chart schematic diagram of the bonding method of the embodiment of the present application.
As shown in Fig. 2 (A), the first substrate 201 that effects on surface deposits bonding metal level 202 processes, to make the Surface Creation covering of described metal level.
Wherein, this first substrate 201 can be device (Device) sheet being formed with micro electromechanical structure, and this metal level is aluminium lamination.And, this process can be completed in the board of machine at dry quarter, such as, this the first substrate 201 can be placed in the dry cavity carving board, dry quarter machine cavity temperature can be controlled at 100-200 DEG C, pass into the hydrogen bromide (HBr) that air pressure is 0-100mbar wherein, this first substrate 201 is placed in this cavity, time of staying 1-10 second, the natural oxidizing layer 203 of layer on surface of metal is reacted with hydrogen bromide (HBr) and generates alchlor (AlBr
3) 204, the alchlor of generation prevents aluminium surface contact to air, thus anti-oxidation; Further, the time of staying of this first substrate in this cavity can be adjusted, all be removed to make the whole aluminium oxide in metal level 202 surface.
As shown in Fig. 2 (B), the temperature of this first substrate and this second substrate environment is adjusted to the first temperature, with by the surface removal of covering from metal level.
Wherein, this second substrate 205 can be such as germanium wafer, is formed with germanium layer 206 on its surface.And, this step can be carried out in the cavity of bonding machine platform, such as, the first substrate handled well and the second substrate are put into the bonding chamber of bonder, be warming up to 430-450 DEG C, this temperature is higher than the boiling point 264 DEG C of alchlor, thus, the alchlor 204 on metal level 202 surface can volatilize in the hot environment in bonder cavity automatically, exposes clean aluminium surface, aluminium interface can be contacted with germanium well, thus be convenient to carry out high-quality Al-Ge eutectic bonding; Meanwhile, for the device needing vacuum, can vacuumize in para-linkage chamber, make air pressure at below 0.1mba, for the device not needing vacuum, nitrogen can be led to make bonding chamber internal gas pressure be about 1ba before pressurization, thus, wafer bonding chamber internal gas pressure is made to meet device needs.
Next, the pressure of 5-30KN can be applied to the first substrate 201 and the second substrate 205, metal level 202 and germanium layer 206 be fitted, and keeps pressure, maintain the temperature 5-30 minute in current bonding chamber; Subsequently, temperature in bonding chamber can be reduced to 410-430 DEG C, release pressure; Then, lead to nitrogen to bonding chamber, continue to be cooled to room temperature, from board, take out be bonded together the first substrate and the second substrate, put into film magazine for subsequent use.
Embodiment 2
The embodiment of the present application 2 provides a kind of manufacture method of semiconductor device, has the bonding method described in embodiment 1.
Fig. 3 is a schematic flow sheet of the manufacture method of semiconductor device in the embodiment of the present application, and as shown in Figure 3, this manufacture method comprises:
S301, is being formed with the first substrate surface deposition bonding metal level of micro electromechanical structure;
S302, carries out the first process to described first substrate depositing described metal level, to make the Surface Creation covering of described metal level;
S303, adjusts to the first temperature by the temperature of environment residing for described first substrate and the second substrate, and with by the surface removal of described covering from described metal level, wherein, described first temperature is higher than the boiling point of described covering;
S304, maintains this first temperature, is fitted on the surface of described second substrate and described metal level, and applies pressure to described first substrate and described second substrate, is integrated to make described first substrate and described second substrate bonding;
S305, described first substrate that para-linkage is integrated and described second substrate carry out the second process, to form semiconductor device.
In the present embodiment, step S302-S304 is corresponding with the step S101-S103 in embodiment 1 respectively, and the present embodiment is repeat specification no longer.
In the present embodiment, the process of step S301 and formation micro electromechanical structure can with reference to prior art.The second process in step S305, can be such as the steps such as cutting, lead-in wire and/or encapsulation, its specific implementation can with reference to existing semiconductor fabrication process, and the embodiment of the present application repeats no more.
According to above-described embodiment of the application, processed by para-linkage metal level, cover layer is formed on the surface of this metal level, and in bonding process, make this cover layer volatilize, to expose clean layer on surface of metal, thereby, it is possible to remove the natural oxidizing layer of layer on surface of metal, improve the effect of eutectic bonding; Further, by controlling the time that para-linkage metal level carries out processing, can fully remove this natural oxidizing layer, and reducing the corrosion of this process to metal level.
More than in conjunction with concrete execution mode to present application has been description, but it will be apparent to those skilled in the art that these descriptions are all exemplary, is not the restriction to the application's protection range.Those skilled in the art can make various variants and modifications according to the spirit of the application and principle to the application, and these variants and modifications are also in the scope of the application.
Claims (10)
1. a bonding method, for making the first substrate and the second substrate bonding be integrated, this bonding method comprises:
Described first substrate that effects on surface deposits bonding metal level processes, to make the Surface Creation covering of described metal level;
The temperature of environment residing for described first substrate and described second substrate is adjusted to the first temperature, and with by the surface removal of described covering from described metal level, wherein, described first temperature is higher than the boiling point of described covering;
Maintain this first temperature, is fitted in the surface of described second substrate and described metal level, and pressure is applied to described first substrate and described second substrate, be integrated to make described first substrate and described second substrate bonding.
2. bonding method as claimed in claim 1, wherein,
When carrying out described process, residing for described first substrate, the temperature of environment is adjusted to the second temperature, and wherein, described second temperature is lower than the boiling point of described covering.
3. bonding method as claimed in claim 1, wherein,
In described process, pass into reactant to environment residing for described first substrate, wherein, the oxide layer of described reactant and described layer on surface of metal reacts, to generate described covering.
4. bonding method as claimed in claim 3, wherein,
Described reactant also reacts with described metal level, to generate described covering.
5. bonding method as claimed in claim 3, wherein,
Described reactant is hydrogen bromide (HBr) or hydrogen chloride (HCl).
6. bonding method as claimed in claim 1, wherein,
The time of carrying out described process is 1-10 second.
7. bonding method as claimed in claim 1, wherein,
The material of described metal level is aluminium, and the material of described second substrate is germanium.
8. a manufacture method for semiconductor device, this manufacture method comprises:
Be formed with the first substrate surface deposition bonding metal level of micro electromechanical structure;
First process is carried out to described first substrate depositing described metal level, to make the Surface Creation covering of described metal level;
The temperature of environment residing for described first substrate and the second substrate is adjusted to the first temperature, and with by the surface removal of described covering from described metal level, wherein, described first temperature is higher than the boiling point of described covering;
Maintain this first temperature, is fitted in the surface of described second substrate and described metal level, and pressure is applied to described first substrate and described second substrate, be integrated to make described first substrate and described second substrate bonding;
Described first substrate that para-linkage is integrated and described second substrate carry out the second process, to form semiconductor device.
9. the manufacture method of semiconductor device as claimed in claim 8, wherein,
In described first process, pass into reactant to environment residing for described first substrate, wherein, the oxide layer of described reactant and described layer on surface of metal reacts, to generate described covering.
10. the manufacture method of semiconductor device as claimed in claim 9, wherein,
Described reactant is hydrogen bromide (HBr) or hydrogen chloride (HCl).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410695956.8A CN104409375B (en) | 2014-11-26 | 2014-11-26 | Bonding method and manufacturing method of semiconductor device |
| PCT/CN2015/091660 WO2016082631A1 (en) | 2014-11-26 | 2015-10-10 | Bonding method and semiconductor device manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410695956.8A CN104409375B (en) | 2014-11-26 | 2014-11-26 | Bonding method and manufacturing method of semiconductor device |
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| CN104409375A true CN104409375A (en) | 2015-03-11 |
| CN104409375B CN104409375B (en) | 2017-03-29 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016082631A1 (en) * | 2014-11-26 | 2016-06-02 | 上海新微技术研发中心有限公司 | Bonding method and semiconductor device manufacturing method |
| CN111945124A (en) * | 2020-08-13 | 2020-11-17 | 气相科技(武汉)有限公司 | Preparation method of nonmetal/metal/nonmetal sandwich structure composite material |
| CN112456436A (en) * | 2019-09-06 | 2021-03-09 | 上海新微技术研发中心有限公司 | Bonding method and bonding structure |
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| CN1462868A (en) * | 2003-06-13 | 2003-12-24 | 中国科学院上海微系统与信息技术研究所 | Isothermal solidification method for air-tight packing micro mechanical sensor |
| CN1839462A (en) * | 2003-11-06 | 2006-09-27 | 松下电器产业株式会社 | Method for bonding substrate, bonded substrate, and direct bonded substrate |
| US20120115305A1 (en) * | 2010-11-10 | 2012-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and structure for wafer to wafer bonding in semiconductor packaging |
| CN103979481A (en) * | 2014-05-28 | 2014-08-13 | 杭州士兰集成电路有限公司 | MEMS aluminum and germanium bonding structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409375B (en) * | 2014-11-26 | 2017-03-29 | 上海新微技术研发中心有限公司 | Bonding method and manufacturing method of semiconductor device |
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2014
- 2014-11-26 CN CN201410695956.8A patent/CN104409375B/en active Active
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- 2015-10-10 WO PCT/CN2015/091660 patent/WO2016082631A1/en active Application Filing
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| JPS55154400A (en) * | 1979-05-15 | 1980-12-01 | Fujitsu Ltd | Gas phase epitaxial growing method of magnesia spinel |
| CN1462868A (en) * | 2003-06-13 | 2003-12-24 | 中国科学院上海微系统与信息技术研究所 | Isothermal solidification method for air-tight packing micro mechanical sensor |
| CN1839462A (en) * | 2003-11-06 | 2006-09-27 | 松下电器产业株式会社 | Method for bonding substrate, bonded substrate, and direct bonded substrate |
| US20120115305A1 (en) * | 2010-11-10 | 2012-05-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and structure for wafer to wafer bonding in semiconductor packaging |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016082631A1 (en) * | 2014-11-26 | 2016-06-02 | 上海新微技术研发中心有限公司 | Bonding method and semiconductor device manufacturing method |
| CN112456436A (en) * | 2019-09-06 | 2021-03-09 | 上海新微技术研发中心有限公司 | Bonding method and bonding structure |
| CN112456436B (en) * | 2019-09-06 | 2024-07-16 | 上海新微技术研发中心有限公司 | Bonding method and bonding structure |
| CN111945124A (en) * | 2020-08-13 | 2020-11-17 | 气相科技(武汉)有限公司 | Preparation method of nonmetal/metal/nonmetal sandwich structure composite material |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016082631A1 (en) | 2016-06-02 |
| CN104409375B (en) | 2017-03-29 |
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