CN103117235A - Plasma-assisted bonding method - Google Patents
Plasma-assisted bonding method Download PDFInfo
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- CN103117235A CN103117235A CN2013100368466A CN201310036846A CN103117235A CN 103117235 A CN103117235 A CN 103117235A CN 2013100368466 A CN2013100368466 A CN 2013100368466A CN 201310036846 A CN201310036846 A CN 201310036846A CN 103117235 A CN103117235 A CN 103117235A
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Abstract
The invention provides a plasma-assisted bonding method. The method comprises the following steps of: providing a first substrate and a second substrate, wherein the surface of the first substrate is provided with an oxide layer; treating the surface of the oxide layer by a nitrogen plasma treatment process; and performing plasma treatment on the to-be-bonded surface of the second substrate, wherein at least one of a plasma type and plasma treatment time in the step is different from those in the step of treating the surface of the oxide layer. The method has the advantages that by adjusting plasma gas and the plasma treatment time, the to-be-bonded surfaces of the two substrates are treated by different plasmas, and two kinds of surfaces with different chemical properties can be obtained, so that the property of a bonding interface and bonding yield are improved.
Description
Technical field
The present invention relates to field of semiconductor materials, relate in particular to a kind of plasmaassisted bonding method.
Background technology
In semiconductor industry, in the processes such as silicon chip production, silicon chip processing, chip production, chip package, usually use the auxiliary bonding technology of plasma.
In the auxiliary bonding technology of plasma, the effect of plasma is by the surface before the processing bonding, can improve the firm degree of bonded interface, and eliminates the interface bubble.The main processing mode of plasma preliminary treatment of the prior art is that two substrate slices treating bonding all adopt nitrogen, oxygen, argon gas or its mist to process, and to improve the interfacial state of bonding surface, achieves the above object.
Therefore, how to optimize plasma-treating technology, be the problem that those skilled in the art generally are concerned about.
Summary of the invention
Technical problem to be solved by this invention is, a kind of plasma-treating technology of optimization is provided, and can improve bonded interface performance and bonding yield.
In order to address the above problem, the invention provides the auxiliary bonding method of a kind of plasma, comprise the steps: to provide the first substrate and the second substrate, described the first substrate surface comprises an oxide layer; Adopt the surface of the described oxide layer of nitrogen plasma treatment PROCESS FOR TREATMENT; Plasma treatment is carried out on the surface that is used for bonding to described the second substrate, and the plasma species that this step adopts and processing time have a treatment step that is different from described oxide layer surface at least.
Optionally, the surface that is used for bonding of described the second substrate is carried out the step of plasma treatment, adopt argon plasma itself or oxygen gas plasma, or both mixing.
Optionally, the surface that is used for bonding of described the second substrate is carried out the step of plasma treatment, also adopt nitrogen gas plasma, but the processing time is not used in the treatment step to described oxide layer surface.
Optionally, described the first substrate and the second substrate are monocrystalline substrate, and the material of described oxide layer is silicon dioxide.
Optionally, described the second substrate surface comprises an epitaxial loayer.
Optionally, the material of described epitaxial loayer is monocrystalline silicon.。
The invention has the advantages that, by adjusting plasma gas and plasma treatment time, two substrate surfaces treating bonding adopt different plasma treatment, can obtain the surface of two kinds of different chemical characteristics, thereby improve bonded interface performance and bonding yield.
Description of drawings
It is the implementation step schematic diagram of the specific embodiment of the present invention shown in accompanying drawing 1;
It is the process chart of the specific embodiment of the present invention shown in accompanying drawing 2A to 2C.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to a kind of plasmaassisted bonding method provided by the invention.
Be the implementation step schematic diagram of this embodiment shown in accompanying drawing 1, comprise: step S10, the first substrate and the second substrate are provided, described the first substrate surface comprises an oxide layer, and described the second substrate surface comprises an epitaxial loayer; Step S11, the surface of adopting the described oxide layer of nitrogen plasma treatment PROCESS FOR TREATMENT; Step S12 carries out plasma treatment to the surface that is used for bonding of described the second substrate.
Shown in accompanying drawing 2A, refer step S10 provides the first substrate 210 and the second substrate 220, and described the first substrate 210 surfaces comprise an oxide layer 211, and described the second substrate 220 surfaces comprise an epitaxial loayer 223.Wherein epitaxial loayer 223 is optional structures, and the second substrate 220 can be also single-layer substrate.In this embodiment, the material of described the first substrate 210 and the second substrate 220 is monocrystalline silicon, and the material of described oxide layer 211 is silicon dioxide, and the material of described epitaxial loayer 223 is for being also monocrystalline silicon.In other embodiment, the material of the first substrate 210, the second substrate 220, epitaxial loayer 223 can be any one common material in this area, such as GaAs, GaN, InP, SiGe and SiC etc.
Shown in accompanying drawing 2B, refer step S11, the surface of adopting the described oxide layer 211 of nitrogen plasma treatment PROCESS FOR TREATMENT, the processing time can be adjusted according to the needs of bonding technology, can be for example between 10 to 120 seconds.The purpose of plasma treatment is to improve the chemism at interface.
Shown in accompanying drawing 2C, refer step S12 carries out plasma treatment to the surface that is used for bonding of described the second substrate 220.In this embodiment, be that the exposed surface of epitaxial loayer 223 is processed.If the second substrate 220 is single-layer substrate, be that any smooth surface of the second substrate 220 is processed.The plasma species that this step adopts and processing time should have a treatment step that is different from described oxide layer surface at least, so that the characteristic on bonding front two surfaces is different, form the bonding performance that needs after reinforcing, improve the bonding yield, eliminate the bonding boundary defect, improve bonded interface mechanics and electric property.
Specifically, this step can adopt argon plasma itself or oxygen gas plasma, or both mixing, and the processing time can be identical with step S11 or different; Can also adopt the identical nitrogen gas plasma with step S11, but the processing time should be different with step S11, can be longer also can be shorter.Above-mentioned dual mode can obtain the surface of two kinds of different chemical characteristics, for example improves or reduce the ability of adsorption hydrone, to be conducive to hydrophily or hydrophobicity bonding; Improve or reduce the ability of other molecule such as adsorption carbon dioxide or material, thereby make the bond strength that bonding surface reaches to be needed, perhaps make bonding surface have peelable characteristic; And then raising bonding yield.
Technique scheme can be applied in the manufacturing of SOI wafer, improve the bonding yield, eliminate the bonding boundary defect, improve bonded interface mechanics, electric property, and can realize bonding to different boundary materials, and can also be used in the wafer level packaging field, deposit layer of material (can be also silicon dioxide or silicon nitride etc.) on the silicon chip of making the IC chip, adopt technique of the present invention to process, can realize firm bonding or peelable bonding performance.
The above is only the preferred embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. the auxiliary bonding method of plasma, is characterized in that, comprises the steps:
The first substrate and the second substrate are provided, and described the first substrate surface comprises an oxide layer;
Adopt the surface of the described oxide layer of nitrogen plasma treatment PROCESS FOR TREATMENT;
Plasma treatment is carried out on the surface that is used for bonding to described the second substrate, and the plasma species that this step adopts and processing time have a treatment step that is different from described oxide layer surface at least.
2. the auxiliary bonding method of plasma according to claim 1, is characterized in that, the surface that is used for bonding of described the second substrate carried out the step of plasma treatment, adopts argon plasma itself or oxygen gas plasma, or both mixing.
3. plasma according to claim 1 is assisted bonding method, it is characterized in that, the surface that is used for bonding of described the second substrate is carried out the step of plasma treatment, also adopt nitrogen gas plasma, but the processing time is different from the treatment step to described oxide layer surface.
4. the auxiliary bonding method of plasma according to claim 1, is characterized in that, described the first substrate and the second substrate are monocrystalline substrate, and the material of described oxide layer is silicon dioxide.
5. the auxiliary bonding method of according to claim 1 or 4 described plasmas, is characterized in that, described the second substrate surface comprises an epitaxial loayer.
6. the auxiliary bonding method of plasma according to claim 5, is characterized in that, the material of described epitaxial loayer is monocrystalline silicon.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900615A (en) * | 2015-05-08 | 2015-09-09 | 武汉新芯集成电路制造有限公司 | Method for improving bonding force and semiconductor bonding structure |
| CN105161437A (en) * | 2015-09-18 | 2015-12-16 | 北京工业大学 | Plasma-assisted glass or quartz chip microstructure alignment and pre-bonding method |
| CN109671614A (en) * | 2017-08-10 | 2019-04-23 | 长江存储科技有限责任公司 | A kind of wafer bonding method |
| CN112117326A (en) * | 2020-09-25 | 2020-12-22 | 中国科学院半导体研究所 | Preparation method of MOS (Metal oxide semiconductor) device and MOS device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104900615A (en) * | 2015-05-08 | 2015-09-09 | 武汉新芯集成电路制造有限公司 | Method for improving bonding force and semiconductor bonding structure |
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Application publication date: 20130522 |