CN116666201A - Heterogeneous integrated body and preparation method thereof - Google Patents

Heterogeneous integrated body and preparation method thereof Download PDF

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Publication number
CN116666201A
CN116666201A CN202310684473.7A CN202310684473A CN116666201A CN 116666201 A CN116666201 A CN 116666201A CN 202310684473 A CN202310684473 A CN 202310684473A CN 116666201 A CN116666201 A CN 116666201A
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wafer
activation
integrated body
heterogeneous
dehydration
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欧欣
徐文慧
伊艾伦
游天桂
瞿振宇
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions

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Abstract

The invention relates to the technical field of semiconductors, in particular to a heterogeneous integrated body and a preparation method thereof, wherein the method comprises the following steps: providing a first wafer and a second wafer, wherein the first wafer comprises a first surface and the second wafer comprises a second surface; performing activation treatment on the first surface and the second surface to obtain a first activation surface and a second activation surface respectively; providing water vapor or a gaseous substance containing hydroxyl groups to the first activation surface and the second activation surface to form hydrophilic groups on the first activation surface and hydrophilic groups on the second activation surface; the method and the device can obviously reduce the defects of the heterogeneous material interfaces, form high-quality heterogeneous interfaces, and further improve the performance of heterogeneous integrated devices prepared by using the heterogeneous integrated bodies.

Description

Heterogeneous integrated body and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a heterogeneous integrated body and a preparation method thereof.
Background
Heterogeneous integration refers to bonding integration of two or more semiconductor materials, so that a multifunctional heterogeneous interface or heterojunction can be formed, and a high-performance device with higher power, higher frequency and higher speed is prepared.
In the prior art, heterogeneous integration is often realized based on intelligent stripping of ion implantation, namely, the heterogeneous integration method is to strip a high-quality monocrystalline film from any monocrystalline wafer, and combine the monocrystalline film with a heterogeneous material by a bonding method so as to solve the problem of mismatch in the heterogeneous integration process, and further, not only can prepare the high-quality heterogeneous integrated wafer material, but also can form a steep heterogeneous interface. However, in the heterogeneous integration process of intelligent stripping based on ion implantation, the stripping process often causes serious damage to a heterogeneous interface, and further the performance of an acoustic, optical and electric heterogeneous integrated device is affected.
Accordingly, there is a need for an improved heterogeneous integration solution to the above-described problems of the prior art.
Disclosure of Invention
In order to solve the problems in the prior art, the embodiment of the invention provides a technical scheme of a heterogeneous integrated body and a preparation method thereof, wherein the technical scheme is as follows:
in one aspect, a method of preparing a heterogeneous integrated body is provided, the method comprising:
providing a first wafer and a second wafer, wherein the first wafer comprises a first surface and the second wafer comprises a second surface;
performing activation treatment on the first surface and the second surface to obtain a first activation surface and a second activation surface respectively;
providing water vapor or a gaseous substance containing hydroxyl groups to the first activation surface and the second activation surface to form hydrophilic groups on the first activation surface and hydrophilic groups on the second activation surface;
and carrying out dehydration bonding treatment on the first wafer and the second wafer to obtain the heterogeneous integrated body.
Further, the ambient pressure after the supply of the water vapor or the gaseous substance to the first and second active surfaces is 10 -5 Pa-10 -1 Pa。
Further, the duration of the supply of water vapor or hydroxyl group-containing gaseous substance to the first and second activation surfaces is 1s to 300s.
Further, the performing dehydration bonding on the first wafer and the second wafer to obtain the heterogeneous integrated body includes:
pre-bonding the first wafer and the second wafer to obtain a pre-integrated body;
and carrying out dehydration treatment on the pre-integrated body to obtain the heterogeneous integrated body.
Further, the dehydration temperature of the dehydration treatment is 50-600 ℃, and the dehydration time is 0.5-96 h.
Further, before performing dehydration bonding processing on the first wafer and the second wafer to obtain the heterogeneous integrated body, the method further includes:
and carrying out alignment treatment on the first wafer and the second wafer so that the lattice mismatch degree between the first wafer and the second wafer meets a preset mismatch condition.
Further, the activating treatment is performed on the first surface and the second surface to obtain a first activated surface and a second activated surface, respectively, including:
treating the activated gas in a vacuum environment to form a plasma;
and respectively performing activation treatment on the first surface and the second surface by utilizing the plasmas so as to respectively obtain the first activation surface and the second activation surface.
Further, the activation power of the activation process is 20W-2000W.
Further, the activating gas is argon or nitrogen.
In another aspect, a heterogeneous assembly is provided, made using a method of making a heterogeneous assembly as described in any of the above schemes.
In another aspect, a heterogeneous integrated body is provided that includes a first wafer layer and a second wafer layer, the first wafer layer being connected to the second wafer layer by covalent bonds formed by dehydration bonding between hydroxyl groups.
The heterogeneous integrated body and the preparation method thereof provided by the invention have the following technical effects:
according to the invention, the first surface in the first wafer and the second surface in the second wafer are subjected to activation treatment, and hydrophilic groups are formed on the first activation surface and the second activation surface respectively, so that defects of a heterogeneous material interface are remarkably reduced, a high-quality heterogeneous interface is formed, and the performance of a heterogeneous integrated device prepared by using the heterogeneous integrated body can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic flow chart of a method for preparing a heterogeneous integrated body according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a structural flow for preparing a heterogeneous integrated body according to an embodiment of the present invention;
wherein, the reference numerals correspond to: 1-heterogeneous integration; 11-a first wafer; 111-a first side; 12-a second wafer; 121-a second side; a 2-ion source; 3-water vapor; 4-vacuum environment.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein.
Referring to fig. 1-2, the following describes the technical scheme of the present invention in detail with reference to fig. 1-2.
The embodiment of the invention provides a preparation method of a heterogeneous integrated body 1, as shown in fig. 1, which specifically comprises the following steps:
s1: a first wafer 11 and a second wafer 12 are provided, the first wafer 11 comprising a first face 111 and the second wafer 12 comprising a second face 121.
In this embodiment, the material of the first wafer 11 is the same as or different from the material of the second wafer 12, and in a specific embodiment, the material of the first wafer 11 is different from the material of the second wafer 12, and the material of the first wafer 11 may be any one of gallium oxide, gallium nitride, silicon carbide, indium phosphide, gallium arsenide and gallium antimonide, preferably, the material of the first wafer 11 is gallium oxide, for example, β -Ga 2 O 3 The material of the second wafer 12 may be any one of gallium oxide, gallium nitride, silicon carbide, indium phosphide, gallium arsenide, and gallium antimonide, and preferably the material of the second wafer 12 is silicon carbide, for example 4H-SiC.
In another embodiment, the first wafer 11 and the second wafer 12 are wafers of the same material and different crystal forms, and in one embodiment, the first wafer 11 may be α -Ga 2 O 3 The second wafer 12 may be beta-Ga 2 O 3 In another embodimentIn the process, the first wafer 11 may be α -SiC, and the second wafer 12 may be β -SiC, and further, by integrating wafers of different crystal forms of the same material, the chemical stability of the heterogeneous integrated body may be further enhanced.
In practical applications, the first surface 111 on the first wafer 11 and the second surface 121 on the second wafer 12 are integrated surfaces, wherein the first surface 111 may be an upper surface of the first wafer 11 or a lower surface of the first wafer 11, and the second surface 121 may be an upper surface of the second wafer 12 or a lower surface of the first wafer 11, which is not limited herein.
S2: the first surface 111 and the second surface 121 are subjected to activation processing, and a first activation surface and a second activation surface are obtained, respectively.
Specifically, the first surface 111 and the second surface 121 are subjected to activation processing, so that the first surface 111 forms a first activation surface including a first broken key, and the second surface 121 forms a second activation surface including a second broken key.
In an alternative embodiment, step S2 may include:
s21: the activated gas is treated under vacuum 4 to form a plasma.
In the embodiment of the invention, the vacuum degree of the vacuum environment 4 is less than or equal to 10 -3 Pa, preferably the vacuum degree of the vacuum environment 4 is less than 10 -4 Pa, in a specific embodiment, step S21 may include: at a vacuum level of less than 10 -3 The activated gas is subjected to an ionization treatment under vacuum 4 of Pa to form plasma.
In practical applications, the activation process is performed in a vacuum environment 4 so as to avoid oxidation or passivation of the first broken bonds in the first activation surface and the second broken bonds in the second activation surface, and covalent bond formation occurs, so that the vacuum environment 4 has a vacuum level of less than 10 -3 Pa, the activation efficiency can be improved.
In an alternative embodiment, the activating gas is argon or nitrogen, preferably argon.
Further, in the specific embodiment of step S21, a certain amount of activated gas is introduced into the cavity space, and the activated gas in the cavity space is ionized by the ion source 2 to form plasma.
S22: the first surface 111 and the second surface 121 are respectively subjected to activation treatment by plasma to obtain a first activation surface and a second activation surface, respectively.
In practical applications, the ion source 2 is capable of generating an electric field during ionization of the activated gas, and the generated plasma is located in the electric field, and the plasma accelerates under the electric field provided by the ion source 2 to strike the first face 111 and the second face 121, so that the first face 111 forms a first activated face including a first broken bond, and the second face 121 forms a second activated face including a second broken bond.
In a specific embodiment, the ion source 2 is specifically located as shown in fig. 2, and it is understood from fig. 2 that the ion source 2 includes a first ion source and a second ion source, wherein the energy output port of the first ion source is oriented toward the first face 111, and the energy output port of the second ion source is oriented toward the second face 121, so as to increase the activation efficiency of the first face 111 and the second face 121.
In an alternative embodiment, the activation process has an activation power of 20W to 2000W and an activation duration of 5s to 700s, and it should be noted that the activation power is the operation power of the ion source 2.
Further, the activation power of the activation process may be 20W-500W, 30W-800W, 40W-900W, 50W-1000W, 60W-1500W, 70W-1700W, 80W-1800W or 90W-2000W, preferably the activation power of the activation process is 50W-1000W, and the activation duration may be 5s-400s, 8s-440s, 10s-540s, 12s-550s, 15s-600s or 15s-700s, preferably the activation duration is 10s-540s.
In practical application, when the activation power of the activation process is 20W, the duration may be 600s, or when the activation power of the activation process is 50W, the duration may be 500s, or when the activation power of the activation process is 100W, the duration may be 400s, which means that, in the activation process, the higher the activation power, the shorter the duration, the lower the activation power and the longer the duration, so the invention can realize high-intensity integration under the activation condition of low irradiation energy, thereby being beneficial to reducing the activation condition and saving energy consumption.
In an alternative embodiment, step S2 may further include: s12: the first wafer 11 and the second wafer 12 are subjected to cleaning treatment.
Specifically, the first wafer 11 and the second wafer 12 may be cleaned with a piranha solution or a BOE solution, and in one embodiment, the first wafer 11 and the second wafer 12 may be placed in the piranha solution or the BOE solution so as to remove the contamination and the native oxide layer on the first surface 111 on the first wafer 11 and the second surface 121 on the second wafer 12, thereby significantly improving the quality of the bonding interface between the first wafer 11 and the second wafer 12.
S3: the first activation surface and the second activation surface are supplied with water vapor 3 or a gaseous substance containing hydroxyl groups to form hydrophilic groups on the first activation surface and hydrophilic groups on the second activation surface.
Specifically, the water vapor 3 is used to provide hydrophilic groups to the first active surface and the second active surface, or the gaseous substance containing hydroxyl groups is used to provide hydrophilic groups to the first active surface and the second active surface, and in an embodiment, the hydrophilic groups are hydroxyl groups, by providing the water vapor 3 or the gaseous substance containing hydroxyl groups to the first active surface and the second active surface to form hydrophilic groups on the first active surface and hydrophilic groups on the second active surface, the hydrophilic groups on the first active surface and the second active surface can be significantly increased, so that stable connection of the first wafer 11 and the second wafer 12 can be realized by using the hydrophilic groups, and a high-quality hetero interface can be formed, so that the performance of the hetero integrated device manufactured by using the hetero integrated body 1 can be improved.
In a specific embodiment, the gaseous substance may be a gaseous organic substance, and illustratively, the gaseous substance containing hydroxyl groups may be gaseous methanol or gaseous ethanol, or the like.
In practical applications, the specific implementation of step S3 may be to inject vapor 3 or a gaseous substance containing hydroxyl groups into the cavity space where the first wafer 11 and the second wafer 12 are located, so as to form hydrophilic groups on the first activation surface and hydrophilic groups on the second activation surface.
In an alternative embodiment, the ambient pressure after the supply of water vapor or gaseous substance to the first and second active surfaces is 10 -5 Pa-10 -1 Pa, wherein the ambient pressure is the pressure of the cavity space where the first wafer 11 and the second wafer 12 are located after the water vapor or the gaseous substance is provided to the first activation surface and the second activation surface.
Alternatively, the ambient pressure of the water vapor 3 or gaseous substance may be 10 -5 Pa-10 -4 Pa、10 -4 Pa-10 -2 Pa、10 - 3 Pa-10 -2 Pa or 10 -2 Pa-10 -1 Pa, preferably the ambient pressure of the water vapour 3 or gaseous substance is 10 -2 Pa-10 -1 Pa。
In an alternative embodiment, the first and second activation surfaces are provided with water vapor 3 or a gaseous substance containing hydroxyl groups for a duration of 1s to 300s.
Alternatively, the duration may be 1s-100s, 2s-150s, 2s-200s, 3s-150s, 3s-200s, 4s-300s or 5s-200s, preferably the duration is 5s-200s.
Furthermore, the present invention can achieve an ambient pressure of 10 by supplying water vapor 3 or a gaseous substance containing hydroxyl groups to the first activation surface and the second activation surface -5 Pa-10 -1 Pa, and supplying water vapor 3 or a gaseous substance containing a hydroxyl group to the first activation surface and the second activation surface for a duration of 1s to 300s, so as to enhance the efficiency of adhesion of the hydrophilic group to the first activation surface and to the second activation surface.
S4: the first wafer 11 and the second wafer 12 are subjected to dehydration bonding treatment to obtain the hetero-integrated body 1.
In the embodiment of the present invention, the dehydration bonding process includes a pre-bonding process and a dehydration process, specifically, the pre-bonding process is performed on the first wafer 11 and the second wafer 12, so that the surfaces of the first wafer 11 and the second wafer 12 are closely contacted and combined together through intermolecular acting force, at this time, the bonding interface between the first wafer 11 and the second wafer 12 is van der waals force or hydrogen bonding, and the dehydration process is performed on the hydrophilic group on the first activation surface and the hydrophilic group on the second activation surface, so as to form a covalent bond with higher strength on the bonding interface between the first wafer 11 and the second wafer 12, so as to enhance the integration strength of the heterogeneous integrated body 1.
In an alternative embodiment, step S4 may include:
s41: the first wafer 11 and the second wafer 12 are pre-bonded to obtain a pre-integrated body.
Specifically, the pre-bonding process is to apply a bonding pressure to the first wafer 11 and the second wafer 12 so that the surfaces of the first wafer 11 and the second wafer 12 are in close contact and are bonded together by an intermolecular force, wherein the applied bonding pressure may be 4000N-8000N, alternatively, 4500N-6000N, 5000N-7000N, 6000N-7000N, 6500N-8000N, or 6000N-8000N, and preferably, the bonding pressure is 5000N-7000N, and further, the integration accuracy of the heterogeneous integrated body 1 may be enhanced, and simultaneously, the bonding pressure of 7000N is applied to the first wafer 11 and the second wafer 12 so as to increase the contact surface of the bonding hydrogen bond of the first wafer 11 and the second wafer 12, thereby helping to enhance the integration strength of the heterogeneous integrated body 1.
S42: the pre-integrated body is dehydrated to obtain a heterogeneous integrated body 1.
Specifically, the dehydration treatment is to dehydrate the hydrophilic groups on the first wafer 11 and the hydrophilic groups on the second wafer 12, so that one water is removed from the two corresponding hydrophilic groups, one oxygen atom remains, and a covalent bond with higher connection strength is formed between the oxygen atom and the first wafer 11 and the second wafer 12, so as to further enhance the integration strength of the heterogeneous integrated body 1.
In an alternative embodiment, the dehydration temperature of the dehydration treatment is 50 ℃ to 600 ℃ and the dehydration time is 0.5h to 96h.
Optionally, the dehydration temperature of the dehydration treatment can be 50-300 ℃, 70-350 ℃, 80-400 ℃, 100-500 ℃, 120-540 ℃, 150-550 ℃ or 200-600 ℃, preferably, the dehydration temperature of the dehydration treatment is 100-500 ℃, optionally, the dehydration time can be 0.5-48 h, 0.5-50 h, 0.5-72 h, 1h-72h, 1.5-96 h or 4-96 h, preferably, the dehydration time is 1h-72h.
In practical application, when the dehydration temperature of the dehydration treatment is 50 ℃, the dehydration time may be 36h, or when the dehydration temperature of the dehydration treatment is 70 ℃, the dehydration time may be 34h, or when the dehydration temperature of the dehydration treatment is 500 ℃, the dehydration time may be 1.5h, etc., it is seen that, in the dehydration process, the higher the dehydration temperature, the shorter the dehydration time, the lower the dehydration temperature, and the longer the dehydration time, and therefore, the whole dehydration process can be completed through the lower dehydration temperature and the longer dehydration time, so as to save energy consumption, and the higher dehydration temperature and the shorter dehydration time, so as to improve the preparation efficiency.
The alignment process, the activation process, and the pre-bonding process, and the process of supplying the vapor 3 or the gaseous substance containing the hydroxyl group to the first activation surface and the second activation surface are all performed under the vacuum atmosphere 4.
In an alternative embodiment, after step S41, the method further includes: and annealing the pre-integrated body.
Specifically, the pre-integrated body is annealed to further enhance the integrated strength of the hetero-integrated body 1, and in one embodiment, the annealing temperature of the annealing process is 300 ℃ to 2000 ℃ and the annealing time is 1min to 72h.
Optionally, the annealing temperature of the annealing treatment can be 300-1000 ℃, 400-1000 ℃, 500-1500 ℃, 600-1000 ℃, 650-2000 ℃ or 700-2000 ℃, preferably, the annealing temperature of the annealing treatment is 500-1500 ℃, optionally, the annealing time can be 1min-36h, 1min-24h, 10min-36h, 20min-72h, 15min-36h or 20min-72h, preferably, the annealing time is 1min-24h.
In an alternative embodiment, the preparation method further comprises, before performing step S4:
s11: the first wafer 11 and the second wafer 12 are aligned so that the lattice mismatch degree between the first wafer 11 and the second wafer 12 satisfies a predetermined mismatch condition.
In the embodiment of the present invention, the alignment process is a process manner of clamping the first wafer 11 and the second wafer 12 by a clamp and rotating the first wafer 11 and the second wafer 12 so that the lattice mismatch degree between the first wafer 11 and the second wafer 12 satisfies a predetermined mismatch condition, that is, the first wafer 11 and the second wafer 12 are rotated so that the first crystal direction of the first wafer 11 is parallel to the second crystal direction of the second wafer 12, and the lattice mismatch degree determined by the lattice constants in the first crystal direction and the second crystal direction satisfies the predetermined mismatch condition.
Specifically, the relationship between the lattice mismatch degree and the lattice constant in the first crystal direction and the lattice constant in the second crystal direction may be:
wherein P is lattice mismatch degree, a s Is the lattice constant, a, of the first wafer 11 in the first crystal direction e Is the lattice constant in the second direction of the second wafer 12.
It should be noted that, the first wafer 11 includes a plurality of first crystal directions, and the lattice constants in each of the plurality of first crystal directions may be different, and the second wafer 12 includes a plurality of second crystal directions, and the lattice constants in each of the plurality of second crystal directions may be different, so that the alignment process may be performed on the first wafer 11 and the second wafer 12 to determine that the lattice mismatch degree between the first wafer 11 and the second wafer 12 meets the preset mismatch condition, so the heterogeneous integrated body 1 prepared in the present invention may be suitable for integrating two wafers with relatively complex structures to form a plurality of heterogeneous integrated bodies 1 with high quality heterogeneous interfaces, and has relatively wide applicability.
In a specific embodiment, the preset mismatch condition may be 0.01-0.2 or less, alternatively, the preset mismatch condition may be 0.01-0.03 or less, 0.02-0.03 or 0.04-0.1 or 0.05-0.12 or 0.1-0.15 or 0.1-0.2 or preferably, the preset mismatch condition is 0.02-0.03 or less.
Preferably, step S11 is performed before step S2 is performed, so as to improve integration accuracy and avoid the alignment process from affecting the activation process and the process of forming hydrophilic groups on the second activation surface.
The technical scheme provided by the embodiment of the invention has the following technical effects:
according to the invention, the first surface 111 in the first wafer 11 and the second surface 121 in the second wafer 12 are subjected to activation treatment, and hydrophilic groups are formed on the first activation surface and the second activation surface respectively, so that defects of a heterogeneous material interface are remarkably reduced, a high-quality heterogeneous interface is formed, and the performance of a heterogeneous integrated device prepared by using the heterogeneous integrated body 1 can be improved.
The embodiment of the invention also provides the heterogeneous integrated body 1, which is manufactured by adopting the preparation method of the heterogeneous integrated body 1.
The embodiment of the invention also provides another heterogeneous integrated body 1, specifically, the heterogeneous integrated body 1 comprises a first wafer 11 layer and a second wafer 12 layer, the first wafer 11 layer is connected with the second wafer 12 layer through covalent bonds, and the covalent bonds are formed through dehydration bonding between hydroxyl groups.
The specific manner in which the individual modules perform the operations in the heterogeneous integrated body in the above-described embodiments has been described in detail in the embodiments regarding the preparation method, and will not be described in detail herein.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (11)

1. A method of preparing a heterogeneous integrated body, the method comprising:
providing a first wafer and a second wafer, wherein the first wafer comprises a first surface and the second wafer comprises a second surface;
performing activation treatment on the first surface and the second surface to obtain a first activation surface and a second activation surface respectively;
providing water vapor or a gaseous substance containing hydroxyl groups to the first activation surface and the second activation surface to form hydrophilic groups on the first activation surface and hydrophilic groups on the second activation surface;
and carrying out dehydration bonding treatment on the first wafer and the second wafer to obtain the heterogeneous integrated body.
2. The method of producing a heterogeneous integrated body according to claim 1, wherein an ambient pressure after supplying the water vapor or the gaseous substance to the first activation surface and the second activation surface is 10 -5 Pa-10 -1 Pa。
3. The method of producing a heterogeneous integrated body according to claim 1, wherein the duration of the supply of water vapor or a gaseous substance containing hydroxyl groups to the first activation surface and the second activation surface is 1s to 300s.
4. The method for preparing a heterogeneous integrated body according to claim 1, wherein the performing dehydration bonding treatment on the first wafer and the second wafer to obtain the heterogeneous integrated body comprises:
pre-bonding the first wafer and the second wafer to obtain a pre-integrated body;
and carrying out dehydration treatment on the pre-integrated body to obtain the heterogeneous integrated body.
5. The method for producing a hetero-integrated body according to claim 4, wherein the dehydration temperature of the dehydration treatment is 50℃to 600℃and the dehydration time is 0.5h to 96h.
6. The method of manufacturing a hetero-integrated body according to claim 1, further comprising, before performing a dehydration bonding process on the first wafer and the second wafer to obtain the hetero-integrated body:
and carrying out alignment treatment on the first wafer and the second wafer so that the lattice mismatch degree between the first wafer and the second wafer meets a preset mismatch condition.
7. The method for preparing a heterogeneous integrated body according to claim 1, wherein the activating treatment is performed on the first surface and the second surface, respectively, to obtain a first activated surface and a second activated surface, respectively, and the method comprises the steps of:
treating the activated gas in a vacuum environment to form a plasma;
and respectively performing activation treatment on the first surface and the second surface by utilizing the plasmas so as to respectively obtain the first activation surface and the second activation surface.
8. The method of manufacturing a heterogeneous integrated body according to claim 1, wherein the activation power of the activation process is 20W to 2000W.
9. The method of claim 7, wherein the activating gas is argon or nitrogen.
10. A heteroassemblage prepared by the method of any one of claims 1 to 9.
11. A heterogeneous assembly comprising a first wafer layer and a second wafer layer, the first wafer layer being connected to the second wafer layer by covalent bonds formed by dehydration bonding between hydroxyl groups.
CN202310684473.7A 2023-06-09 2023-06-09 Heterogeneous integrated body and preparation method thereof Pending CN116666201A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117877985A (en) * 2023-12-07 2024-04-12 湖南大学 Method for controlling van der Waals gap and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117877985A (en) * 2023-12-07 2024-04-12 湖南大学 Method for controlling van der Waals gap and semiconductor device

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