CN103346694A - Piezoelectric micro energy collector based on annular interdigital electrode and preparation method thereof - Google Patents
Piezoelectric micro energy collector based on annular interdigital electrode and preparation method thereof Download PDFInfo
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- CN103346694A CN103346694A CN2013102320936A CN201310232093A CN103346694A CN 103346694 A CN103346694 A CN 103346694A CN 2013102320936 A CN2013102320936 A CN 2013102320936A CN 201310232093 A CN201310232093 A CN 201310232093A CN 103346694 A CN103346694 A CN 103346694A
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Abstract
The invention discloses a piezoelectric micro energy collector based on an annular interdigital electrode and a preparation method of the piezoelectric micro energy collector. The piezoelectric micro energy collector comprises a substrate layer, an insulating layer, a bonding layer, a piezoelectric layer and a top electrode layer from bottom to top. A mass block shape is etched and reserved in the substrate layer, and the top electrode layer is of an annular interdigital structure. During preparation, through hole etching is conducted on the reverse side of the substrate layer through a DRIE method or a wet way, and the insulating layer is deposited on the substrate layer; the insulating layer and the piezoelectric layer are made to be connected in an adhesive mode through a bonding method; the top electrode layer of an annular structure is manufactured on the piezoelectric layer. According to the piezoelectric micro energy collector based on the annular interdigital electrode and the preparation method of the piezoelectric micro energy collector, PZT and other piezoelectric materials are adopted, piezoelectric films are prepared by the adoption of the bonding method and a thinning method; an annular electrode d33 mode is adopted at the same time, and the piezoelectric micro energy collector is different from a traditional rectangular electrode d33 energy collector or a cantilever beam type energy collector in structure. According to the piezoelectric micro energy collector based on the annular interdigital electrode, the structure is simple, micro machining can be easily achieved, the size is reduced, and conversion efficiency is high. The piezoelectric micro energy collector based on the annular interdigital electrode is applied to the work environment with a low frequency vibration source.
Description
Technical field
What the present invention relates to is a kind of device of energy technology field, in particular, relates to a kind of piezoelectric micro energy collecting device based on the ring-type interdigital electrode and preparation method thereof.
Background technology
In recent years, along with developing rapidly of microelectric technique, micromachining technology and wireless sensor technology, to new requirement and the challenge of power supply proposition of micro element.The micro piezoelectric vibration energy collector, as the little energy device of a kind of novel collection certainly, the vibrational energy of environment of living in can be converted to electric energy by piezoelectric effect, so that the microelectronic device electric energy to be provided, the current phase that receives much concern at new forms of energy is subjected to more broad research.
At present, adopt the piezoelectric energy collector of MEMS technology preparation, most of d that adopts
31Vibration mode produces electric energy, mainly is because d
31Pattern is that structure is simple relatively in piezoelectric upper and lower surface deposit metal electrodes, and it is bigger that electric charge is gathered area.d
33Mode of vibration adopts interdigital electrode to realize, though its electrode area is than d
31Little, but can compare d thereby can produce by the spacing that changes interdigital electrode and the performance that interdigital structure changes device
31The output voltage that the pattern energy collecting device is higher.
Retrieval to the prior art document finds that people such as Dong-Joo Kim etc. write articles " Modeling and evaluation of d in " Journal of Micromechanics and Microengineering " (2012)
33Mode piezoelectric energy harvesters " (" d
33The model of mode piezoelectric energy collecting device and evaluation " " micromechanics and little engineering periodical ").This article is to cantilever beam structure d
33Pattern designs and processes." Comparison of MEMS PZT cantilevers based on d writes articles in this seminar at " Journal of Microelectromechanical Systems " simultaneously
31Andd
33Modes for vibration energy harvesting " (" d of MEMS structure
31And d
33Vibration mode Piezoelectric Cantilever Beams energy acquisition performance is relatively " " microelectromechanical systems periodical ").This article is to the d of cantilever beam structure
31And d
33The pattern energy collecting device carries out performance relatively.
Summary of the invention
The objective of the invention is to overcome above-mentioned prior art above shortcomings, propose a kind of piezoelectric micro energy collecting device based on the ring-type interdigital electrode and preparation method thereof.Essence of the present invention is a kind of d based on annular interdigital electrode
33Energy collecting device is given the applied voltage source by the voltage energy supply that piezoelectric effect produces equally, and another effective d that solves except square slotting finger electrode is provided
33Piezoelectric energy collector.d
33Piezoelectric energy collector adopts externally film generation deformation under the vibrational energy source forcing of piezoelectric thin-film structure, and the material production piezoelectric effect realizes outside resources to the transformation of internal power source, transmits this problem thereby efficient solution contacts energy by no means.Utilize the d of piezoelectric effect simultaneously
33Pattern, namely the outside stress that applies and the mechanicalness that therefore causes becomes along the thin-film width direction, and the voltage that polarised direction produces is similar to the piezoelectric of size, d also along the pattern of this direction
33The open circuit voltage of piezoelectricity pattern can compare d
31Pattern is high.The ring-type interdigital electrode is than the interdigital collection sound wave energy that is fit to more of rectangle, and it is comparatively reasonable effectively to gather the electric charge area, improves d
33The energy collecting device performance.
The objective of the invention is to be achieved through the following technical solutions:
First aspect the present invention relates to a kind of piezoelectric micro energy collecting device based on the ring-type interdigital electrode, comprises from the bottom to top substrate layer, insulating barrier, bonded layer, piezoelectric layer and upper electrode layer; Described substrate layer etching leaves the mass shape, and described upper electrode layer is the ring-type interdigital structure.
Preferably, described upper electrode layer is conductive non-metals, metal or metallic compound.
Preferably, described upper electrode layer is Au, Pt, Cu or Graphene.
Preferably, described substrate layer is silicon substrate, glass substrate or SOI substrate.
Preferably, described insulating barrier is silicon dioxide, silicon nitride or polymeric layer.
Preferably, described polymeric layer is parylene layer, PDMS layer or PI layer.
Preferably, described piezoelectric layer is PZT, BCT-BZT or PVDF piezoelectric film.
Second aspect the present invention relates to a kind of preparation method of aforesaid piezoelectric micro energy collecting device based on the ring-type interdigital electrode, comprises the steps:
Steps A, carry out the via etch at the substrate layer back side, depositing insulating layer on substrate layer by DRIE or wet method;
Step B, the method by bonding make described insulating barrier and piezoelectric layer bonding;
Step C, make the upper electrode layer of circulus at described piezoelectric layer.
Preferably, among the step C, the upper electrode layer of described making circulus is specially: the upper electrode layer raw material is created on the piezoelectric layer by sputter or evaporation technology, after the graphical treatment, forms described upper electrode layer by chemical etching or dry etch process.
Compared with prior art, the beneficial effect that has of the present invention is: the present invention adopts ring electrode d
33Energy collecting device, under the excitation of extraneous vibration source, the inner variation that produces stress and strain of piezoelectric layer, thus producing output current and voltage on the electrode, designed structure can be gathered the extraneous vibration energy every sky.The present invention adopts the method for microfabrication to make, and is easy to produce in batches and microminiaturized, will carry out integratedly with cmos circuit simultaneously, finishes the systematization function element.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 is structural representation of the present invention; Wherein A is vertical view, and B is the structure cutaway view;
Among the figure, 1 is substrate layer, and 2 is insulating barrier, and 3 is piezoelectric layer, and 4 is upper electrode layer, and 5 is bonded layer.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.Following examples will help those skilled in the art further to understand the present invention, but not limit the present invention in any form.Should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make certain adjustments and improvements.These all belong to protection scope of the present invention.
As shown in Figure 1B, the d based on the ring-type interdigital electrode disclosed in this invention
33The piezoelectric micro energy collecting device comprises: substrate layer 1, insulating barrier 2, upper electrode layer 4, piezoelectric layer 3 and bonded layer 5.Depositing insulating layer 2 on substrate layer 1, and is bonding with glue and piezoelectric layer 3 by the method for bonding then, reaches required bond strength with the bonding temperature that is fit to.Bonding PZT thick film is carried out reduction process, to required thickness, the piezoelectric membrane good uniformity behind the attenuate wherein, film thickness is controlled, implement the making of electric pole plate 4 afterwards by sputter or evaporation technology, to this layer metal or nonmetal electrode patternization, the ring-type interdigital structure shown in Figure 1A is then by chemical etching or the graphical upper electrode layer 4 of dry etch process etching off with photoetching process.Substrate layer 1 is positioned at the bottom, and carries out the via etch of substrate back by DRIE or wet method, discharges piezoelectric membrane, and the substrate thickness of institute's etching and film thickness coupling are with the required resonance frequency of acquisition device.
Under the excitation of extraneous vibration source as the ultrasonic energy, piezoelectric layer thin film or thick film produce piezoelectric effect, and namely piezoelectric under extraneous vibrational excitation deformation takes place, and causes the variation of material internal stress, thereby inner electric charge is subjected to displacement and has produced electric field.The metal level charges accumulated is gathered, realize with contactless or contact extraneous vibration being converted to the process of electric energy.When the piezoelectric supersonic energy collecting device was its resonance frequency in the thin film work frequency, output voltage was the highest.
More than specific embodiments of the invention are described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present invention.
Claims (9)
1. the piezoelectric micro energy collecting device based on the ring-type interdigital electrode is characterized in that, comprises from the bottom to top substrate layer, insulating barrier, bonded layer, piezoelectric layer and upper electrode layer; Described substrate layer etching leaves the mass shape, and described upper electrode layer is the ring-type interdigital structure.
2. the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 1 is characterized in that, described upper electrode layer is conductive non-metals, metal or metallic compound.
3. the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 2 is characterized in that, described upper electrode layer is Au, Pt, Cu or Graphene.
4. the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 1 is characterized in that, described substrate layer is silicon substrate, glass substrate or SOI substrate.
5. the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 1 is characterized in that, described insulating barrier is silicon dioxide, silicon nitride or polymeric layer.
6. the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 5 is characterized in that, described polymeric layer is parylene layer, PDMS layer or PI layer.
7. the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 1 is characterized in that, described piezoelectric layer is PZT, BCT-BZT or PVDF piezoelectric film.
8. the preparation method of the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 1 is characterized in that, comprises the steps:
Steps A, carry out the via etch at the substrate layer back side, depositing insulating layer on substrate layer by DRIE or wet method;
Step B, the method by bonding make described insulating barrier and piezoelectric layer bonding;
Step C, make the upper electrode layer of circulus at described piezoelectric layer.
9. the preparation method of the piezoelectric micro energy collecting device based on the ring-type interdigital electrode according to claim 8, it is characterized in that, among the step C, the upper electrode layer of described making circulus is specially: the upper electrode layer raw material is created on the piezoelectric layer by sputter or evaporation technology, after the graphical treatment, form described upper electrode layer by chemical etching or dry etch process.
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Cited By (13)
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| CN104810470A (en) * | 2014-01-26 | 2015-07-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Surface acoustic wave device and preparation method thereof |
| CN105185898A (en) * | 2015-07-14 | 2015-12-23 | 北方工业大学 | Flexible transparent functional device and preparation method thereof |
| CN105226993A (en) * | 2014-06-24 | 2016-01-06 | 欣兴电子股份有限公司 | Wind power generation plant |
| CN105515442A (en) * | 2015-12-04 | 2016-04-20 | 国网江西省电力科学研究院 | Socket-type piezoelectric energy harvester |
| CN106237532A (en) * | 2016-08-22 | 2016-12-21 | 深圳烯旺新材料科技股份有限公司 | A kind of Multi-channel hot moxibustion instrument |
| CN106404919A (en) * | 2016-08-25 | 2017-02-15 | 中国科学院微电子研究所 | Surface acoustic wave sensor |
| CN106486593A (en) * | 2015-08-26 | 2017-03-08 | 中国科学院上海微系统与信息技术研究所 | Minisize thermoelectric energy collecting device of bilateral pore structure and preparation method thereof |
| CN107576854A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of interdigital concentric circles MEMS low conductivities sensor of band and application method |
| CN109167189A (en) * | 2018-08-31 | 2019-01-08 | 捷信（浙江）通信技术有限公司 | A kind of satellite antenna |
| CN109216536A (en) * | 2018-08-15 | 2019-01-15 | 河南科技大学 | A kind of orthotropic piezoelectric ceramic actuator |
| WO2019090601A1 (en) * | 2017-11-09 | 2019-05-16 | 苏州大学 | Micro energy collector based on piezoelectric thick film mems process and preparation method thereof |
| CN111585021A (en) * | 2020-05-16 | 2020-08-25 | 西安工业大学 | Self-powered antenna system based on graphene composite material and manufacturing method |
| CN112250032A (en) * | 2019-07-22 | 2021-01-22 | 安徽奥飞声学科技有限公司 | Manufacturing method of MEMS structure |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810470A (en) * | 2014-01-26 | 2015-07-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Surface acoustic wave device and preparation method thereof |
| CN105226993A (en) * | 2014-06-24 | 2016-01-06 | 欣兴电子股份有限公司 | Wind power generation plant |
| CN105185898A (en) * | 2015-07-14 | 2015-12-23 | 北方工业大学 | Flexible transparent functional device and preparation method thereof |
| CN105185898B (en) * | 2015-07-14 | 2018-02-16 | 北方工业大学 | Flexible transparent functional device and preparation method thereof |
| CN106486593A (en) * | 2015-08-26 | 2017-03-08 | 中国科学院上海微系统与信息技术研究所 | Minisize thermoelectric energy collecting device of bilateral pore structure and preparation method thereof |
| CN106486593B (en) * | 2015-08-26 | 2018-09-28 | 中国科学院上海微系统与信息技术研究所 | Minisize thermoelectric energy collecting device of bilateral pore structure and preparation method thereof |
| CN105515442A (en) * | 2015-12-04 | 2016-04-20 | 国网江西省电力科学研究院 | Socket-type piezoelectric energy harvester |
| CN105515442B (en) * | 2015-12-04 | 2017-12-12 | 国网江西省电力科学研究院 | A kind of mortar type piezoelectric harvester |
| CN106237532B (en) * | 2016-08-22 | 2019-02-12 | 烯旺新材料科技股份有限公司 | Multichannel thermal moxibustion instrument |
| CN106237532A (en) * | 2016-08-22 | 2016-12-21 | 深圳烯旺新材料科技股份有限公司 | A kind of Multi-channel hot moxibustion instrument |
| CN106404919A (en) * | 2016-08-25 | 2017-02-15 | 中国科学院微电子研究所 | Surface acoustic wave sensor |
| CN107576854A (en) * | 2017-10-12 | 2018-01-12 | 河海大学 | A kind of interdigital concentric circles MEMS low conductivities sensor of band and application method |
| WO2019090601A1 (en) * | 2017-11-09 | 2019-05-16 | 苏州大学 | Micro energy collector based on piezoelectric thick film mems process and preparation method thereof |
| CN109216536A (en) * | 2018-08-15 | 2019-01-15 | 河南科技大学 | A kind of orthotropic piezoelectric ceramic actuator |
| CN109167189A (en) * | 2018-08-31 | 2019-01-08 | 捷信（浙江）通信技术有限公司 | A kind of satellite antenna |
| CN109167189B (en) * | 2018-08-31 | 2020-10-13 | 捷信（浙江）通信技术有限公司 | Satellite antenna |
| CN112250032A (en) * | 2019-07-22 | 2021-01-22 | 安徽奥飞声学科技有限公司 | Manufacturing method of MEMS structure |
| CN112250032B (en) * | 2019-07-22 | 2023-12-12 | 安徽奥飞声学科技有限公司 | Manufacturing method of MEMS structure |
| CN111585021A (en) * | 2020-05-16 | 2020-08-25 | 西安工业大学 | Self-powered antenna system based on graphene composite material and manufacturing method |
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