CN109261477A - A kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode - Google Patents
A kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode Download PDFInfo
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- CN109261477A CN109261477A CN201811238777.6A CN201811238777A CN109261477A CN 109261477 A CN109261477 A CN 109261477A CN 201811238777 A CN201811238777 A CN 201811238777A CN 109261477 A CN109261477 A CN 109261477A
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- supersonic wave
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- 239000000758 substrate Substances 0.000 claims abstract description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The invention discloses a kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode.Energy converter is equipped with substrate, structure sheaf, hearth electrode, piezoelectric layer, top electrode.Energy converter working principle is to utilize forward and inverse piezoelectric effect realization mechanical energy to electric energy or electric energy to the conversion of mechanical energy.Originally the top electrode for being rectangular ring structure and piezoelectric layer cutting are four pieces of homalographic rectangular configurations by the present invention, and this structure can reduce the positive area of top electrode and hearth electrode, to reduce parasitic capacitance, improve the signal-to-noise ratio of ultrasonic transducer.Meanwhile aperture is etched in four edges vacated, the rigidity of vibrating diaphragm is advantageously reduced in this way, improves the transmitting sensitivity of energy converter, and then is made up and reduced the loss caused by energy converter transmitting sensitivity of top electrode area.
Description
Technical field
The invention belongs to the field of transducer in MEMS (MEMS) technical field, have height more particularly to one kind
Signal-to-noise ratio, highly sensitive piezoelectric supersonic wave transducer.
Background technique
Piezoelectric supersonic wave transducer be it is a kind of can not only convert electrical energy into mechanical energy, but also electricity can be converted by mechanical energy
The device for integrating transmitting-receiving ultrasonic wave of energy.Traditional ultrasonic transducer is by the way of machining, and volume is big, function
Consumption is high, it is integrated to be unfavorable for, and since its acoustic impedance and traditional sound transmission medium (empty gas and water) mismatch, sound emission efficiency
It is lower.Then effectively overcome in conjunction with the microelectromechanical ultrasound wave transducer that the micro manufacturing technique that micro electro mechanical system (MEMS) technology uses processes
Disadvantages mentioned above.Microelectromechanical ultrasound wave transducer by its working principle can be broadly divided into micro electronmechanical capacitive ultrasonic transducer and
Micro electronmechanical piezoelectric-type ultrasonic wave transducer: the sensitivity of capacitive ultrasonic transducer and bandwidth are compared with piezoelectric ultrasonic transducing
Device has some superiority, but it needs very high DC offset voltage and extremely narrow capacitance gap to realize, while being limited to limited
The acoustic pressure of amplitude, transmitting is also very limited [1]；On the contrary, the amplitude of piezoelectric-type ultrasonic wave transducer is much bigger, but it is limited to existing rank
The section limited piezoelectric constant of piezoelectric material and intrinsic parasitic capacitance, the when sensitivity of the noise of micro electronmechanical piezoelectric ultrasonic
It also needs further to optimize.A kind of micro electronmechanical piezoelectric supersonic with etched hole and sectional type top electrode designed by the present invention
Wave transducer can effectively improve its sensitivity, increase its signal-to-noise ratio, daily application such as: fingerprint recognition [2], away from
With greater advantage from detection [3] and energy acquisition [4] etc..
Citation:
[1]Jung J,Kim S,Lee W and Choi H 2013Fabrication of a two-dimensional
piezoelectric micromachined ultrasonic transducer array using a top-
crossover-to-bottom structure and metal bridge connections,J.Micromechanics
Microengineering 23 125037.
[2]Przybyla R J,Tang H Y,Shelton S E,Horsley D A and Boser B E 2014
12.1 3D ultrasonic gesture recognition Dig.Tech.Pap.-IEEE Int.Solid-State
Circuits Conf.57 210–1.
[3]Przybyla R J,Tang H,Member S,Guedes A,Shelton S E,Horsley D A and
Boser B E 2015 3D Ultrasonic Range finder on a Chip IEEE J.Solid-State
Circuits 50 320–34
[4]He Q,Liu J,Yang B,Wang X,Chen X and Yang C 2014 MEMS-based
ultrasonic transducer as the receiver for wireless power supply of the
implantable microdevices Sensors Actuators,A Phys.219 65–72
Summary of the invention
It is an object of the invention to solve the problems, such as noise existing in the prior art, when sensitivity is not high, and provides one
Kind has the micro electronmechanical piezoelectric supersonic wave transducer of etched hole and sectional type top electrode.
The technical solution adopted by the present invention to solve the technical problems is:
A kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode, it is characterised in that: including
Substrate, hearth electrode, piezoelectric layer and top electrode, backside of substrate middle section open up slotted cavities, and substrate front surface is made to form elastic knot
Structure layer (41), fixing end of the substrate on slotted cavities periphery as resilient structural layer；The front of resilient structural layer stacks gradually bottom
Electrode, piezoelectric layer and top electrode collectively form vibration film with resilient structural layer；Wherein hearth electrode covers substrate front surface, and presses
Electric layer is made of the rectangular element of 4 pieces of homalographics, is centrosymmetric distribution along the central point of resilient structural layer, and corner missing is surrounded
Q-RING, and 4 pieces of rectangular elements are mutually not in contact with each other；The top electrode structure is identical with piezoelectric layer, and 4 pieces of top electrode
Rectangular element is Chong Die with 4 pieces of rectangular element one-to-one correspondence of piezoelectric layer；In 4 missing edges of the Q-RING, shape is etched
At the through-hole array for running through hearth electrode and resilient structural layer；And piezoelectric layer and top electrode do not cover aperture.
When energy converter is as transmitting terminal, vibrating diaphragm is driven using inverse piezoelectric effect by applying alternating voltage in upper, hearth electrode
Flat out-of-plane vibration is done, to generate ultrasonic wave；When as receiving end, it will be drawn under external ultrasonic exciting using direct piezoelectric effect
The diaphragm oscillations risen are converted into electric signal output.
Preferably, the aperture (diameter) of through-hole is 3-5 μm in the through-hole array, spacing is 6-8 μm.
Preferably, the width of 4 pieces of rectangular elements of 4 pieces of rectangular elements and piezoelectric layer of the top electrode is the slot
The 30%-35% of half side length of shape cavity, length are the 65%-70% of slotted cavities side length；The outer edge and slot of the Q-RING
The outer edge of shape cavity is overlapped.
Preferably, the via depth and the sum of resilient structural layer and hearth electrode thickness are consistent, it is 4~7 μm.
Preferably, the substrate and resilient structural layer are Semiconducting Silicon Materials, including monocrystalline silicon or polysilicon.
Preferably, the slotted cavities in backside of substrate selective etch by forming.
Preferably, the piezoelectric material in the piezoelectric layer is aluminium nitride, zinc oxide or lead titanate piezoelectric ceramics.
Preferably, the hearth electrode is boron doped silicon or metal material gold, platinum, aluminium or tin.
Preferably, described powers on extremely metal material gold, platinum, aluminium or tin.
Preferably, 4 pieces of rectangular elements of the top electrode connect same driving source, top electrode is swashed with same driving source
It encourages.
Energy converter working principle of the invention is to realize mechanical energy to electric energy or electric energy to mechanical using forward and inverse piezoelectric effect
The conversion of energy.The top electrode of original Q-RING is cut into the rectangular block of four pieces of homalographics, in this way change energy converter upper/lower electrode
Corresponding area be conducive to the signal-to-noise ratio for improving energy converter in this way to reduce parasitic capacitance value.Meanwhile in former Q-RING
Four edges etch aperture, the rigidity of vibrating diaphragm is advantageously reduced in this way, to improve the sensitivity of energy converter.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples
Fig. 1 is that the structure of the micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode in the present invention is shown
It is intended to；
Fig. 2 is the A-A diagrammatic cross-section of Fig. 1；
Fig. 3 is the partial enlarged view of dotted line frame B in Fig. 2；
Fig. 4 is the equivalent circuit diagram with the micro electronmechanical piezoelectric supersonic wave transducer of etched hole and sectional type top electrode；
In figure: top electrode 1, piezoelectric layer 2, hearth electrode 3, substrate 4, resilient structural layer 41, vibration film 00.
Specific embodiment
The present invention is further elaborated and is illustrated with reference to the accompanying drawings and detailed description.Each implementation in the present invention
The technical characteristic of mode can carry out the corresponding combination under the premise of not conflicting with each other.
As shown in Figures 1 to 3, a kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode,
It mainly include substrate 4, hearth electrode 3, piezoelectric layer 2 and top electrode 1.By going out a flute profile sky in 4 back selective etch of substrate
Chamber makes the front of substrate 4 form certain thickness resilient structural layer 41, the part of substrate 4 that 41 periphery of resilient structural layer is not etched
It is formed at fixing end (anchor end).The front of resilient structural layer 41 stacks gradually hearth electrode 3, piezoelectric layer 2 and top electrode 1 from the bottom to top,
Hearth electrode 3, piezoelectric layer 2 and top electrode 1 and resilient structural layer 41 collectively form vibration film 00.Wherein hearth electrode 3 covers substrate 4
Upper surface, and the area coverage of piezoelectric layer 2 and top electrode 1 is relatively small.Piezoelectric layer 2 by 4 pieces of homalographics rectangular element group
At being centrosymmetric distribution along the central point of resilient structural layer 41.4 pieces of rectangular elements of piezoelectric layer 2 are respectively close to elastic construction
One outside of layer 41, surrounds an approximate Q-RING, but 4 pieces of rectangular elements are mutually not in contact with each other, so that 4 of the Q-RING
Edge has lacked one piece of square area.But on the whole, the outer edge of the Q-RING and the outer edge of slotted cavities project
It is to be overlapped.Likewise, 1 structure of top electrode is identical with piezoelectric layer 2, and by top electrode 1 on the basis of original Q-RING
On be cut into the rectangular elements of four pieces of homalographics, form sectional type top electrode.4 pieces of rectangular elements of top electrode 1 and piezoelectric layer 2
4 pieces of rectangular elements correspond overlapping covering.In 4 missing corner areas of piezoelectric layer 2 and the Q-RING of top electrode 1, etching
The through-hole array of N × N is formed, each through-hole runs through resilient structural layer 41 and hearth electrode 3 in etching process.The 4 of top electrode
Block rectangular element connects same driving source, is motivated with same driving source.As shown in Figure 1, top electrode 1 and piezoelectric layer 2 are uniform
It is distributed in four sides, piezoelectric layer 2 and top electrode 1 and aperture adjacent distributions and does not cover aperture.When energy converter is as transmitting terminal, pass through
Apply alternating voltage in upper, hearth electrode and do flat out-of-plane vibration using inverse piezoelectric effect driving vibrating diaphragm, to generate ultrasonic wave；As
When receiving end, electric signal output will be converted by caused diaphragm oscillations under external ultrasonic exciting using direct piezoelectric effect.
In addition, the structural parameters of each component are as follows in the present embodiment: 1 material of top electrode is aluminium electrode, with a thickness of 1 μm；Pressure
2 material of electric layer is aluminium nitride, with a thickness of 0.5 μm.Any one piece of rectangular element of top electrode 1 and any one piece of square of piezoelectric layer 2
Shape unit, width are 37.5 μm, and length is 175 μm.In order to distinguish display top electrode and piezoelectric layer in Fig. 1~3, therefore will pressure
The inner edge of electric layer and outside have carried out the extension of appropriateness, but top electrode and pressure in the present embodiment at a distance from resilient structural layer center
The inside and outside edge of electric layer practical (i.e. floor projection) in vertical direction is completely coincident, the Q-RING and piezoelectricity that top electrode 1 is formed
Outer edge of the Q-RING that layer 2 is formed in floor projection also with slotted cavities is completely coincident.3 material of hearth electrode is boron doped
Silicon, with a thickness of 1 μm.4 material of substrate is semiconductor silicon, with a thickness of 400 μm, by discharging from back selective etch part silicon
Vibrating diaphragm 00, the resilient structural layer 41 formed after etching with a thickness of 5 μm, length and width is 250 μm.The depth and elasticity of aperture
The sum of 3 thickness of structure sheaf 41 and hearth electrode is consistent, is 6 μm.In the through-hole array of each missing corner areas, array is 4 × 4
Rectangular array, it is 6-8 μm that the aperture of each through-hole, which is 3-5 μm, and the adjacent pitch of holes in array is identical.
As shown in figure 4, the equivalent circuit diagram of above-mentioned energy converter, there is a parasitic capacitance between top electrode 1 and hearth electrode 3
C0, its presence brings noise to circuit, reduces the performance of energy converter.According to formulaIt is found that reducing two
The relative area S of block pole plate can reduce parasitic capacitance value accordingly, improve the signal-to-noise ratio of energy converter.And in hearth electrode and knot
Structure layer etches aperture to reduce the rigidity of vibrating diaphragm, improves the sensitivity of energy converter.
It is proposed by the invention a kind of with the micro electronmechanical piezoelectric supersonic wave transducer for having etched hole and sectional type top electrode, lead to
Cutting is crossed to form sectional type top electrode and the face of top electrode and hearth electrode can be made in this structure of corner etching aperture
Area reduces, to reduce the harm of parasitic capacitance, improves the signal-to-noise ratio of energy converter.Simultaneously as the knot of this aperture
Structure makes the stiffness reduction of vibrating diaphragm, further increases the sensitivity of energy converter.To sum up, with etched hole and sectional type top electrode
Micro electronmechanical piezoelectric supersonic wave transducer has high s/n ratio and highly sensitive advantage.
Claims (10)
1. a kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode, it is characterised in that: including base
Bottom (4), hearth electrode (3), piezoelectric layer (2) and top electrode (1), substrate (4) back side middle section open up slotted cavities, make substrate
(4) front forms resilient structural layer (41), fixing end of the substrate (4) on slotted cavities periphery as resilient structural layer (41)；Bullet
Property structure sheaf (41) front stack gradually hearth electrode (3), piezoelectric layer (2) and top electrode (1), it is common with resilient structural layer (41)
It constitutes vibration film (00)；Wherein hearth electrode (3) covering substrate (4) front, and piezoelectric layer (2) is by the rectangle list of 4 pieces of homalographics
Member composition, is centrosymmetric distribution along the central point of resilient structural layer (41), surrounds the Q-RING that corner lacks, and 4 pieces of rectangles
Unit is mutually not in contact with each other；Top electrode (1) structure is identical with piezoelectric layer (2), 4 pieces of rectangular elements of top electrode (1)
It is Chong Die with 4 pieces of rectangular element one-to-one correspondence of piezoelectric layer (2)；In 4 missing edges of the Q-RING, etching, which is formed, to be run through
The through-hole array of hearth electrode (3) and resilient structural layer (41)；And piezoelectric layer (2) and top electrode (1) do not cover aperture.
2. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: in the through-hole array, the aperture of through-hole is 3-5 μm, and spacing is 6-8 μm.
3. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: the width of 4 pieces of rectangular elements of 4 pieces of rectangular elements and piezoelectric layer (2) of the top electrode (1) is the flute profile
The 30%-35% of half side length of cavity, length are the 65%-70% of slotted cavities side length；The outer edge and flute profile of the Q-RING
The outer edge of cavity is overlapped.
4. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: the sum of the via depth and resilient structural layer (41) and hearth electrode (3) thickness are consistent, are 4~7 μm.
5. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: the substrate (4) and resilient structural layer (41) is Semiconducting Silicon Materials, including monocrystalline silicon or polysilicon.
6. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: the slotted cavities in substrate (4) back side selective etch by forming.
7. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
It is characterized by: the piezoelectric material in the piezoelectric layer (2) is aluminium nitride, zinc oxide or lead titanate piezoelectric ceramics.
8. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: the hearth electrode (3) is boron doped silicon or metal material gold, platinum, aluminium or tin.
9. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: the top electrode (1) is metal material gold, platinum, aluminium or tin.
10. the micro electronmechanical piezoelectric supersonic wave transducer according to claim 1 with etched hole and sectional type top electrode,
Be characterized in that: 4 pieces of rectangular elements of the top electrode (1) connect same driving source.
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| CN201811238777.6A CN109261477A (en) | 2018-10-23 | 2018-10-23 | A kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109831729A (en) * | 2019-01-30 | 2019-05-31 | 武汉大学 | Compact high sensitivity MEMS capacitive sensor |
| CN110277486A (en) * | 2019-07-05 | 2019-09-24 | 重庆大学 | A kind of high temperature SAW device chip and preparation method thereof using array hole extraction electrode |
| CN110926590A (en) * | 2019-12-06 | 2020-03-27 | 联合微电子中心有限责任公司 | Piezoelectric type MEMS hydrophone |
| CN111064387A (en) * | 2020-01-06 | 2020-04-24 | 南方科技大学 | Adaptive energy harvester |
| CN113120849A (en) * | 2020-01-16 | 2021-07-16 | 京东方科技集团股份有限公司 | Transducer element, preparation method thereof and transducer |
| CN117225676A (en) * | 2023-11-14 | 2023-12-15 | 南京声息芯影科技有限公司 | Integrated structure of ultrasonic transducer array and CMOS circuit and manufacturing method |
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