CN1968547A - Silicon microphone - Google Patents
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- CN1968547A CN1968547A CN 200510114889 CN200510114889A CN1968547A CN 1968547 A CN1968547 A CN 1968547A CN 200510114889 CN200510114889 CN 200510114889 CN 200510114889 A CN200510114889 A CN 200510114889A CN 1968547 A CN1968547 A CN 1968547A
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- vibrating diaphragm
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- polysilicon
- microphone
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 82
- 239000010703 silicon Substances 0.000 title claims abstract description 82
- 230000004888 barrier function Effects 0.000 claims description 54
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 40
- 229920005591 polysilicon Polymers 0.000 claims description 39
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 239000002131 composite material Substances 0.000 claims description 22
- 239000012528 membrane Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000005260 corrosion Methods 0.000 claims description 17
- 230000007797 corrosion Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000000725 suspension Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
The invention relates to a condenser silicon microphone, wherein the vibration film is upper and the back pole is lower; the vibration film is connected to frame via suspension beam, while it has groove to support the vibration film; the film has many small holes, matched with suspension beam to release the inner stress of film, reduce rigidity and improve mechanical flexibility; said holes can be sound holes reducing sound resistance and the holes for corroding sacrificial layer, to prepare small-back-pole structure, improve the rigidity of back pole, and reduce chip size. The invention has high flexibility and low noise, etc.
Description
Technical field
The present invention relates to the mike technique field, particularly capacitance type silicon microphone structure and manufacture craft thereof.
Background technology
Nineteen eighty-three Royer produces first microphone on silicon chip, caused all circles' attention.Miscellaneous microphones is developed realization successively on silicon chip.Wherein, main the most popular a kind of be the capacitance silicon micro-microphone.Characteristics such as the capacitance silicon micro-microphone has not only that volume is little, highly sensitive, good frequency response, noise are low, the more important thing is and have very wide working temperature, applicable to automatic production line operation and bad working environment such as SMT, be that present any microphone institute is irreplaceable, it will open up microphone application space more widely.
Capacitance type silicon microphone is a kind of sonic transducer that utilizes micromachining technology to make on silicon chip, the electric capacity that its functional structure is made up of vibrating diaphragm and backplane.The internal stress of vibrating diaphragm directly affects the sensitivity of microphone, and the big more sensitivity of internal stress is low more, and the low internal stress vibrating diaphragm is most important to making the microphone product.Existing a lot of to the research of low stress vibrating diaphragm, from effect, adopt free diaphragm structure can eliminate the internal stress of vibrating diaphragm fully, but will consider also that simultaneously technology realizes the difficulty or ease problem.Balance technology difficulty and vibrating diaphragm sensitivity improve two aspects of effect, adopting local linking to each other of low stress vibrating diaphragm and substrate is good method.
The rigidity backplane is that microphone has good frequency characteristic and low noise precondition.Vibrating diaphragm is accepted sound wave and is produced vibration, if will make the microphone operate as normal, must reduce gas-flow resistance, thus need with vibrating diaphragm over against backplane on open several hole and satisfy low acoustic resistance requirement, but also make the rigidity reduction of backplane like this.Thicken the rigidity that backplane can effectively strengthen backplane, but the technology difficulty of making thick backplane is big.
Remove above-mentioned will dealing with problems, also there is difficulty in the silicon microphone chip when further miniaturization.Miniaturization development along with each electronic product requires the volume of microphone also more and more littler.To silicon microphone, encapsulation technology is constantly progressive, makes littler silicon microphone chip and has become the present problem that needs solution.Guaranteeing to make littler silicon microphone chip under the highly sensitive prerequisite of microphone, traditional project organization is difficult to realize.In the making of silicon microphone, the consideration cost has to adopt wet corrosion technique to make the back of the body chamber of chip, and wet etching is not straight up and down, and one 57.4 degree corrosion angle is arranged, and the computing formula of back side perforate length of side a is as follows:
a＝l+d
Wherein, l represents to corrode the length of side of the film of formation, and d represents the thickness of silicon chip.Can be than the film size that corrosion forms big of back side corrosion opening are in the ragged edge of chip structure more.As seen, chip size reduces to depend on reducing of film size that corrosion forms, but in traditional design, in order to satisfy the requirement of sensitivity, corrodes film forming area and be difficult to reduce, so chip also is difficult for reducing.
Summary of the invention
The objective of the invention is in order to solve the problem that prior art exists, provide a kind of and can reduce the vibrating diaphragm internal stress, increase the rigidity of backplane, and can reduce the silicon microphone of chip size, it has high sensitivity, low noise, broadband, characteristic that size is little.
For achieving the above object, technical solution of the present invention provides a kind of silicon microphone, be capacitance type silicon microphone, comprise silicon substrate, bulk silicon etching barrier layer, backplane, insulating barrier, sacrifice layer, vibrating diaphragm and metal electrode, its be vibrating diaphragm last, backplane under the silicon microphone structure, vibrating diaphragm links to each other fluted support vibrating diaphragm on the vibrating diaphragm by overarm with frame on every side; Vibrating diaphragm is provided with countless apertures, and the cooperation cantilever beam structure fully discharges the internal stress of vibrating diaphragm, reduces the rigidity of vibrating diaphragm, improves the mechanical sensitivity of vibrating diaphragm; Aperture on the vibrating diaphragm as the hole of sound hole that reduces acoustic resistance and corrosion sacrifice layer, to produce little backplane structure, increases the rigidity of backplane simultaneously, also reduces the size of chip simultaneously.
The back of the body chamber that described silicon microphone, its described silicon substrate central part have bulk silicon etching to form, back of the body silicon substrate upper surface and barrier layer all around, chamber is connected, and the barrier layer upper surface is backplane and insulating barrier, and insulating barrier encloses around backplane, and it is suitable for reading that backplane is covered in back of the body chamber; Circle is fixed with sacrifice layer around the insulating barrier upper surface, and the upper surface of sacrifice layer is connected with vibrating diaphragm, and arbitrary limit of vibrating diaphragm is provided with metal electrode; In order to reduce parasitic capacitance, backplane and vibrating diaphragm center up and down over against, between backplane and the vibrating diaphragm air gap is arranged, the backplane edge extends lead-in wire, lead ends is provided with down metal electrode;
Backplane is provided with a large amount of sound holes, and array is lined up in the sound hole, and directly communicates with air gap;
Vibrating diaphragm links to each other with frame on every side by a plurality of overarms, and each overarm is provided with the overarm clearance hole each other;
Plurality of grooves on the vibrating diaphragm distributes ringwise, and the aperture of number row annular distribution is arranged near the vibrating diaphragm edge, and aperture and air gap communicate;
Insulating barrier is positioned at above the corrosion barrier layer, below the groove on the vibrating diaphragm, with insulation vibrating diaphragm and backplane.
Described silicon microphone, its described overarm is planar structure or pleated structure.
Described silicon microphone, the groove on its described vibrating diaphragm evenly distributes, and equidistant with the vibrating diaphragm edge, and and there is a gap its bottom between the insulating barrier when not switching on.
Described silicon microphone, its described backplane, be positioned on the vibrating diaphragm groove the projection on its plane around scope in.
Described silicon microphone, the sound hole on the aperture on its described vibrating diaphragm, overarm clearance hole and the backplane is square, circle or polygon, makes to reduce the usefulness of acoustic resistance and corrosion sacrifice layer.
Described silicon microphone, the planar structure of its described overarm is in-line or S shape plane; Pleated structure is continuous groove shape fold.
Described silicon microphone, its described bulk silicon etching barrier layer is silicon nitride or silica.
Described silicon microphone, its described backplane, the composite membrane that forms for single level polysilicon or polysilicon, silicon nitride.
Described silicon microphone, its described vibrating diaphragm, the composite membrane that forms for single level polysilicon or polysilicon, silicon nitride.
Described silicon microphone when its described backplane is single level polysilicon, is directly made single level polysilicon on the bulk silicon etching barrier layer, open insulation tank, to form backplane and insulating barrier, again to backplane Doping Phosphorus or boron, form n type or p type conductor, as the bottom electrode of electric capacity; When backplane is composite membrane, on the bulk silicon etching barrier layer, make polysilicon, silicon nitride composite membrane, open insulation tank, to form backplane and insulating barrier,, form n type or p type conductor, as the bottom electrode of electric capacity to the polysilicon doping phosphorus or the boron of the backplane the superiors.
Described silicon microphone when its described vibrating diaphragm is composite membrane, is at first made one deck polysilicon at the sacrifice layer upper surface, and carries out phosphorus or boron doping, makes it to become conductive layer, with its top electrode as capacitance type silicon microphone; Afterwards, deposited silicon nitride, polysilicon layer have successively constituted vibrating diaphragm jointly again; The silicon nitride for the polysilicon of compression, tension stress of being grown, according to the size of polysilicon and silicon nitride layer internal stress, the thickness of regulating them recently reduces the composite membrane internal stress, reaches the requirement of low stress.
Described silicon microphone, its described sacrifice layer is the silicon dioxide of 2～4 micron thickness.
Little backplane of the present invention, when material was identical with thickness, specific rigidity was better mutually with big backplane.Corrode the corrosion of little backplane perforate is corresponding and diminish, chip size can reduce thereupon.
The present invention has the characteristic of high sensitivity, low noise, bandwidth, and the volume of chip is little, and manufacture craft is simple, realizes in batches easily.
Description of drawings
Fig. 1 capacitance type silicon microphone section of structure of the present invention;
Fig. 2 capacitance type silicon microphone vertical view of the present invention;
Suspension beam structure schematic diagram among Fig. 3 the present invention, wherein, Fig. 3 a is a planar structure overarm vertical view, Fig. 3 b is a pleated structure overarm profile;
Backplane vertical view among Fig. 4 the present invention;
A kind of backplane manufacture craft schematic diagram among Fig. 5 the present invention;
A kind of sacrifice layer manufacture craft schematic diagram among Fig. 6 the present invention;
A kind of vibrating diaphragm production process charts schematic diagram among Fig. 7 the present invention;
Composite diaphragm structure schematic diagram among Fig. 8 the present invention;
A kind of silicon microphone section of structure among Fig. 9 the present invention.
Embodiment
As Fig. 1～shown in Figure 4, be capacitance type silicon microphone of the present invention, its basic structure is: on silicon substrate 21, be connected with bulk silicon etching barrier layer 22 in regular turn, backplane 23 and insulating barrier 24, sacrifice layer 25, vibrating diaphragm 26, last metal electrode 27 and following metal electrode 28.Wherein, the back of the body chamber 36 that silicon substrate 21 central parts have bulk silicon etching to form, back of the body silicon substrate 21 upper surfaces and barrier layer 22 all around, chamber 36 is connected, and barrier layer 22 upper surfaces are backplane 23 and insulating barrier 24, insulating barrier 24 encloses around backplane 23, and it is suitable for reading that backplane 23 is covered in back of the body chamber 36.Circle is fixed with sacrifice layer 25 around insulating barrier 24 upper surfaces, and the upper surface of sacrifice layer 25 is connected with vibrating diaphragm 26, and arbitrary limit of vibrating diaphragm 26 is provided with metal electrode 27.In order to reduce parasitic capacitance, backplane 23 and vibrating diaphragm 26 centers up and down over against, backplane 23 edges extend lead-in wire 32,32 terminations that go between are provided with down metal electrode 28.So just formed vibrating diaphragm 26 last, backplane 23 under capacitance structure, vibrating diaphragm 26 and backplane 23 are conductive layer or conductive composite layer, as two electrodes of electric capacity, they are respectively with separately last metal electrode 27, metal electrode 28 links to each other down.
In order to reduce the internal stress of vibrating diaphragm 26, link to each other with frame on every side in vibrating diaphragm 26 edge designs overarm 29, overarm 29 comprises planar structure and two kinds of pleated structures up and down, as shown in Figure 3, Fig. 3 a is the vertical view that two kinds of planar structures are hung oneself from a beam, and is in-line or S shape plane; Fig. 3 b is the profile of pleated structure overarm up and down, is continuous groove shape fold.In order further to discharge the internal stress of vibrating diaphragm 26 and the rigidity that reduces vibrating diaphragm 26, the design number is arranged the aperture 30 of annular distribution near the edge of vibrating diaphragm 26, and the shape of aperture can be circular, square or other polygon; In order to support this soft vibrating diaphragm 26, near the groove 31 that design one circle is evenly distributed its edge, separate with insulating barrier 24 bottom of groove 31, be positioned at insulating barrier 24 above, behind making alive on vibrating diaphragm 26 and the backplane 23, groove 31 bottoms are pressed on the insulating barrier 24, and insulating barrier 24 prevents vibrating diaphragm 26 and backplane 23 conductings.Backplane 23 be positioned at groove 31 downward projections around the zone within, backplane 23 edges extend the lead-in wire 32.Be provided with the sound hole 33 of several array arrangements above the backplane 23, the aperture 30 on the backplane 23 on sound hole and the vibrating diaphragm 26, overarm clearance hole 34 acoustic resistance when reducing outstanding film vibration jointly that matches also satisfies corrosion sacrifice layer 25 simultaneously, forms the needs of air gap 35.This design of making aperture 30 on vibrating diaphragm 26 can effectively reduce the size of backplane 23, increases the rigidity of backplane 23, reduces the size of entire chip.
In order to make structrual description of the present invention clearer and more definite, describe below realizing a kind of specific embodiment of the present invention.
Concrete processing step:
As shown in Figure 5, select twin polishing (100) silicon chip 21 for use, at first make one deck corrosion barrier layer 22 on silicon chip 21, corrosion barrier layer 22 can be silica, silicon nitride material, and its thickness will satisfy the requirement that stops bulk silicon etching and get final product.In order to make backplane 23 satisfy low stress, hard conditions, make the compound back pole 23 of polysilicon and silicon nitride, on corrosion barrier layer 22, replace growing polycrystalline silicon and silicon nitride layer, formation composite membrane and last one deck are polysilicon layer.Here be example with three layers of composite membrane, be followed successively by polysilicon, silicon nitride from the bottom up, polysilicon.Can regulate their thickness and recently turn the composite membrane internal stress down according to silicon nitride and polysilicon internal stress size on the one hand, reach the requirement of low stress; The gross thickness of composite membrane can be done thickly on the other hand, and not deform or cracked, satisfy the requirement of rigidity.Open insulation tank 37 along backplane shape as shown in Figure 4, the degree of depth of fluting is to the silicon nitride layer of composite membrane, and insulation tank 37 is isolated into backplane 23 and insulating barrier 24 to laminated film, to the polysilicon doping phosphorus or the boron of backplane 23 the superiors, form n type or p type conductor, as the bottom electrode of electric capacity.Afterwards, open hole 33 on backplane 23, the degree of depth of perforate stops to corrosion barrier layer 22.Certainly, also can on bulk silicon etching barrier layer 22, directly make single level polysilicon,, form backplane 23 and insulating barrier 24,, form n type or p type conductor, as the bottom electrode of electric capacity again to backplane 23 Doping Phosphorus or boron with the above-mentioned method of opening insulation tank 37.
As shown in Figure 6, form after backplane 23 and the insulating barrier 24, the silicon dioxide of 2～4 micron thickness of deposit in the above is as sacrifice layer 25.In order to make the groove 31 on the vibrating diaphragm 26, etching shrinkage pool 38 on sacrifice layer is carved sacrifice layer 25, stops to insulating barrier 24.Then, make one deck thin silicon oxide sacrifice layer 39,, guarantee after having discharged silica that vibrating diaphragm 26 upper grooves 31 bottoms are separated with insulating barrier 24 as the sacrifice layer between groove 31 and the insulating barrier 24 in the shrinkage pool bottom.
As shown in Figure 7, make the vibrating diaphragm layer on sacrifice layer 25, the vibrating diaphragm layer can be a single level polysilicon, also can be the structure of composite membrane of polysilicon, silicon nitride, polysilicon.Here be example with composite membrane as vibrating diaphragm 26, as shown in Figure 8, at first make one deck polysilicon 26a, and carry out phosphorus or boron doping, make it to become conductive layer, its top electrode as capacitance type silicon microphone.Afterwards, deposited silicon nitride 26b, polysilicon layer 26c have successively constituted the vibrating diaphragm layer jointly again.Here growth is the polysilicon of compression, the silicon nitride of tension stress, and according to the size of polysilicon and silicon nitride layer internal stress, the thickness of regulating them recently reduces the composite membrane internal stress, reaches the requirement of low stress.Remove part vibrating diaphragm layer with lithographic method, form overarm clearance hole 34 and aperture 30, as shown in Figure 2.
By etching, polysilicon layer 26a and lead-in wire 32 parts are exposed, make upper and lower metal electrode 27,28 in exposure position, and link to each other with conductive layer 26a, the backplane 23 of vibrating diaphragm 26 respectively, as shown in Figure 2.
As shown in Figure 9, the part perforate of corresponding backplane 23 from silicon chip 21 back sides, protection is positive, utilizes the wet method potassium hydroxide solution to carry out bulk silicon etching.Erode to barrier layer 22 and stop, and then be etched away barrier layer 22, formed back of the body chamber 36.At last, process sound hole 33 and aperture 30, clearance hole 34, remove silicon dioxide sacrificial layer 25 below the vibrating diaphragm with hydrofluoric acid dry method or wet etching, form air gap 35 between vibrating diaphragm 26 and backplane 23, this moment, vibrating diaphragm 26 became the outstanding membrane structures that have overarm 29 to support.Formed vibrating diaphragm 26 last, little backplane 23 under capacitance type silicon microphone.
With detailed description of the present invention, be a preferred embodiment of the present invention shown in the above accompanying drawing, it does not limit the invention to this embodiment.
Claims (13)
1. a silicon microphone is capacitance type silicon microphone, comprises silicon substrate, bulk silicon etching barrier layer, backplane, insulating barrier, sacrifice layer, vibrating diaphragm and metal electrode, it is characterized in that:
For vibrating diaphragm last, backplane under the silicon microphone structure, vibrating diaphragm links to each other fluted support vibrating diaphragm on the vibrating diaphragm by overarm with frame on every side; Vibrating diaphragm is provided with countless apertures, and the cooperation cantilever beam structure fully discharges the internal stress of vibrating diaphragm, reduces the rigidity of vibrating diaphragm, improves the mechanical sensitivity of vibrating diaphragm; Aperture on the vibrating diaphragm as the hole of sound hole that reduces acoustic resistance and corrosion sacrifice layer, to produce little backplane structure, increases the rigidity of backplane simultaneously, also reduces the size of chip simultaneously.
2. silicon microphone as claimed in claim 1, it is characterized in that: the back of the body chamber that described silicon substrate central part has bulk silicon etching to form, back of the body silicon substrate upper surface and barrier layer all around, chamber is connected, the barrier layer upper surface is backplane and insulating barrier, insulating barrier encloses around backplane, and it is suitable for reading that backplane is covered in back of the body chamber; Circle is fixed with sacrifice layer around the insulating barrier upper surface, and the upper surface of sacrifice layer is connected with vibrating diaphragm, and arbitrary limit of vibrating diaphragm is provided with metal electrode; In order to reduce parasitic capacitance, backplane and vibrating diaphragm center up and down over against, between backplane and the vibrating diaphragm air gap is arranged, the backplane edge extends lead-in wire, lead ends is provided with down metal electrode;
Backplane is provided with a large amount of sound holes, and array is lined up in the sound hole, and directly communicates with air gap;
Vibrating diaphragm links to each other with frame on every side by a plurality of overarms, and each overarm is provided with the overarm clearance hole each other;
Plurality of grooves on the vibrating diaphragm distributes ringwise, and the aperture of number row annular distribution is arranged near the vibrating diaphragm edge, and aperture and air gap communicate;
Insulating barrier is positioned at above the corrosion barrier layer, below the groove on the vibrating diaphragm, with insulation vibrating diaphragm and backplane.
3. silicon microphone as claimed in claim 1 or 2 is characterized in that: described overarm is planar structure or pleated structure.
4. silicon microphone as claimed in claim 1 or 2 is characterized in that: the groove on the described vibrating diaphragm evenly distributes, and equidistant with the vibrating diaphragm edge, and and there is a gap its bottom between the insulating barrier when not switching on.
5. silicon microphone as claimed in claim 1 or 2 is characterized in that: described backplane, be positioned on the vibrating diaphragm groove the projection on its plane around scope in.
6. silicon microphone as claimed in claim 1 or 2 is characterized in that: the sound hole on the aperture on the described vibrating diaphragm, overarm clearance hole and the backplane, be square, circle or polygon, and make to reduce the usefulness of acoustic resistance and corrosion sacrifice layer.
7. silicon microphone as claimed in claim 3 is characterized in that: the planar structure of described overarm is in-line or S shape plane; Pleated structure is continuous groove shape fold.
8. silicon microphone as claimed in claim 1 or 2 is characterized in that: described bulk silicon etching barrier layer is silicon nitride or silica.
9. silicon microphone as claimed in claim 1 or 2 is characterized in that: described backplane, the composite membrane that forms for single level polysilicon or polysilicon, silicon nitride.
10. silicon microphone as claimed in claim 1 or 2 is characterized in that: described vibrating diaphragm, the composite membrane that forms for single level polysilicon or polysilicon, silicon nitride.
11. silicon microphone as claimed in claim 9, it is characterized in that: when described backplane is single level polysilicon, on the bulk silicon etching barrier layer, directly make single level polysilicon, open insulation tank, to form backplane and insulating barrier, to backplane Doping Phosphorus or boron, form n type or p type conductor, again as the bottom electrode of electric capacity; When backplane is composite membrane, on the bulk silicon etching barrier layer, make the composite membrane of polysilicon, silicon nitride, open insulation tank,,, form n type or p type conductor, as the bottom electrode of electric capacity to the polysilicon doping phosphorus or the boron of the backplane the superiors to form backplane and insulating barrier.
12. silicon microphone as claimed in claim 10 is characterized in that: when described vibrating diaphragm is composite membrane, at first make one deck polysilicon, and carry out phosphorus or boron doping, make it to become conductive layer, with its top electrode as capacitance type silicon microphone at the sacrifice layer upper surface; Afterwards, deposited silicon nitride, polysilicon layer have successively constituted vibrating diaphragm jointly again; The silicon nitride for the polysilicon of compression, tension stress of being grown, according to the size of polysilicon and silicon nitride layer internal stress, the thickness of regulating them recently reduces the composite membrane internal stress, reaches the requirement of low stress.
13. silicon microphone as claimed in claim 1 or 2 is characterized in that: described sacrifice layer is the silicon dioxide of 2～4 micron thickness.
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| CN2005101148897A CN1968547B (en) | 2005-11-18 | 2005-11-18 | Silicon microphone |
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| CN2005101148897A CN1968547B (en) | 2005-11-18 | 2005-11-18 | Silicon microphone |
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| CN101472212B (en) * | 2007-12-24 | 2012-10-10 | 北京大学 | Post-CMOS capacitance silicon-based micro-microphone and preparation method thereof |
| CN101321408B (en) * | 2007-06-06 | 2012-12-12 | 歌尔声学股份有限公司 | Internal rotation beam diaphragm and microphone chip composed by the same |
| CN101321407B (en) * | 2007-06-06 | 2012-12-26 | 歌尔声学股份有限公司 | Girder-type diaphragm and microphone chip composed by the same |
| CN103347809A (en) * | 2011-02-03 | 2013-10-09 | 尼瓦洛克斯-法尔股份有限公司 | Method for producing complex smooth micromechanical part |
| CN106412782A (en) * | 2016-11-22 | 2017-02-15 | 苏州敏芯微电子技术股份有限公司 | Micro silicon microphone and manufacturing method thereof |
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| CN2935691Y (en) * | 2006-05-22 | 2007-08-15 | 潍坊歌尔电子有限公司 | Silicon microphone |
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2005
- 2005-11-18 CN CN2005101148897A patent/CN1968547B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101321408B (en) * | 2007-06-06 | 2012-12-12 | 歌尔声学股份有限公司 | Internal rotation beam diaphragm and microphone chip composed by the same |
| CN101321407B (en) * | 2007-06-06 | 2012-12-26 | 歌尔声学股份有限公司 | Girder-type diaphragm and microphone chip composed by the same |
| CN101472212B (en) * | 2007-12-24 | 2012-10-10 | 北京大学 | Post-CMOS capacitance silicon-based micro-microphone and preparation method thereof |
| CN103347809A (en) * | 2011-02-03 | 2013-10-09 | 尼瓦洛克斯-法尔股份有限公司 | Method for producing complex smooth micromechanical part |
| CN103347809B (en) * | 2011-02-03 | 2015-11-25 | 尼瓦洛克斯-法尔股份有限公司 | For the production of the method for the smooth micromechanical parts of complexity |
| CN106412782A (en) * | 2016-11-22 | 2017-02-15 | 苏州敏芯微电子技术股份有限公司 | Micro silicon microphone and manufacturing method thereof |
| WO2018094963A1 (en) * | 2016-11-22 | 2018-05-31 | 苏州敏芯微电子技术股份有限公司 | Micro-silicon microphone and manufacturing method thereof |
| CN108632731B (en) * | 2017-03-16 | 2020-06-30 | 中芯国际集成电路制造(上海)有限公司 | MEMS microphone forming method and MEMS microphone |
| CN108632731A (en) * | 2017-03-16 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | The forming method and MEMS microphone of MEMS microphone |
| CN109261477A (en) * | 2018-10-23 | 2019-01-25 | 浙江大学 | A kind of micro electronmechanical piezoelectric supersonic wave transducer with etched hole and sectional type top electrode |
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| CN111246355A (en) * | 2020-03-30 | 2020-06-05 | 中芯集成电路制造(绍兴)有限公司 | MEMS device and method of forming a MEMS device |
| CN111246355B (en) * | 2020-03-30 | 2021-05-25 | 中芯集成电路制造(绍兴)有限公司 | MEMS device and method of forming a MEMS device |
| CN112235697A (en) * | 2020-10-13 | 2021-01-15 | 歌尔微电子有限公司 | Sensitive membrane, MEMS microphone and manufacturing method thereof |
| CN112235697B (en) * | 2020-10-13 | 2022-01-14 | 歌尔微电子有限公司 | Sensitive membrane, MEMS microphone and manufacturing method thereof |
| WO2023045827A1 (en) * | 2021-09-22 | 2023-03-30 | 通用微(深圳)科技有限公司 | Electrical structure, electronic cigarette switch, and electronic cigarette |
| CN114858215A (en) * | 2022-05-05 | 2022-08-05 | 中国科学院微电子研究所 | Multi-sensor combined structure, processing method thereof and combined sensor |
| CN114858215B (en) * | 2022-05-05 | 2024-02-13 | 中国科学院微电子研究所 | Multi-sensor combination structure, processing method thereof and combined sensor |
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