CN105628264B - High sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor based on synchro-resonance - Google Patents

High sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor based on synchro-resonance Download PDF

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CN105628264B
CN105628264B CN201610171506.8A CN201610171506A CN105628264B CN 105628264 B CN105628264 B CN 105628264B CN 201610171506 A CN201610171506 A CN 201610171506A CN 105628264 B CN105628264 B CN 105628264B
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shaped beam
piezoelectricity
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vibration pick
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CN105628264A (en
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王东方
杜旭
王昕�
杨旭
刘欣
刘欢
郑果文
毛梦元
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Jilin University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22

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Abstract

The present invention relates to a kind of high sensitivity piezoelectricity pressure drag electric capacity based on synchro-resonance to be superimposed force-sensing sensor, belongs to achievable piezoelectricity, pressure drag, the synchro-resonance cantilever beam force-sensing sensor of electric capacity superposition.C-type supporting construction bottom is fixedly connected with piezoelectric exciting structure, the middle part of the c-type supporting construction is connected with U-shaped beam, T-shaped beam, synchronous coupled beams, the both sides of T-shaped beam are connected with synchronous coupled beams, the inner side of U-shaped beam is also connected with synchronous coupled beams, T-shaped beam upper surface deposits multi-disc piezoelectricity vibration pick-up structure, fixed end surfaces are provided with pressure drag vibration pick-up structure, two capacitor vibration pick-up structures composition differential capacitance vibration pick-up structure.Advantage is structure novelty, and by better simply structure design, piezoelectricity, pressure drag, capacitor vibration pick-up structure are integrated in same structure, the superposition of three's output signal, can further be exaggerated output voltage, improve the detection sensitivity of sensor.

Description

High sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor based on synchro-resonance
Technical field
The present invention relates to the synchro-resonance cantilever beam force-sensing sensor that a kind of achievable piezoelectricity, pressure drag, electric capacity are superimposed.
Background technology
In recent years, Main Means of the force-sensing sensor as detection material mass, the size of power, are widely used in environment The many aspects such as detection, industrial production, food security.Resonant transducer part small volume, resonant frequency is high, thus with higher Sensitivity, such as resonant mode gas sensor.Cantilever beam is as structure most classical, succinct in micro-system, to mass change Sensitivity, and it is easy to small manufacture.Resonant mode cantilever beam type force-sensing sensor utilizes the specific adsorbent of mass-sensitive film Molecule, the mass change of beam is changed into the skew of resonant frequency, obtains offset and pass through electric signal output, you can obtain institute Survey the quality of material.In the process, it is that domestic and international scientific worker is of concern heavy to design highly sensitive force-sensing sensor Point problem.
Have related research institutes at present to obtain highly sensitive force-sensing sensor, the structure of sensor is visited Rope and design.U.S.'s Oak Ridge National Laboratory demonstrated micro-cantilever resonant transducer in 1994 and can be used for gas first Detect and higher sensitivity can be obtained；Univ cambridge uk is by driving cantilever beam to be at strong nonlinear vibration the (the 5th Resonance mode), frequency offset during so as to increase material Adsorption and desorption, improve the sensitivity of sensor；Dogue de Bordeaux university Autoexcitation is devised using screen printing technique, from the toluene gas sensor read, and height is obtained by longitudinal mode of resonance Resonant frequency, there is higher sensitivity.Inha University of South Korea have studied the rectangle, triangle, stepped beam of similar face product Amount of deflection, the size of resonant frequency compare in the presence of similar face stress.Compared to rectangular configuration, the triangle of cantilever beam, The amount of deflection of forge piece of step type structure has been respectively increased 257%, 79%, and frequency has been respectively increased 31%, 19%；Taiwan Tsing-Hua University is studied The triangles of different aspect ratios, semicircle, the comparison of rectangle and interior contact graph resonant frequency, find the inscribe figure of high aspect ratio The combination of both shapes, the cantilever beam of low aspect ratio can make cantilever beam have higher sensitivity；Dalian University of Technology proposes to pass through The surface configuration (trapezoidal) and cross-sectional configuration (groove profile) for changing spring beam further lift the new method of transducer sensitivity, phase For square-section beam sensor, sensitivity improves 287.8%；German semiconductor technology research institute to the structure of beam by entering Row optimization, and temperature compensation structure is designed in metal meter vibration pickup, improve the sensitivity of sensor；Dalian University of Technology devises Double-deck and biplate piezoelectricity pzt thin film micro cantilever structure, double-deck tandem-type connection piezoelectricity pzt thin film cantilever beam type micro-force sensor, Obtain higher sensitivity.The studies above result improves the sensitivity of sensor on certain Cheng Du.However, do not have Research institution can utilize number of mechanisms superposition design while greatly improve the sensitivity of sensor.
The content of the invention
The present invention provides a kind of high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor based on synchro-resonance, realizes more Kind mechanism superposition design, and then greatly improve the sensitivity of sensor.
The present invention adopts the technical scheme that：C-type supporting construction bottom is fixedly connected with piezoelectric exciting structure, the c-type branch The middle part of support structure is connected with U-shaped beam, T-shaped beam, synchronous coupled beams, and the both sides of T-shaped beam are connected with synchronous coupled beams, U-shaped beam Inner side is also connected with synchronous coupled beams, and T-shaped beam upper surface deposits multi-disc piezoelectricity vibration pick-up structure, and fixed end surfaces are provided with pressure drag and picked up Shake structure, T-shaped beam free end upper surface depositing electrode, upper capacitor vibration pick-up structure, T are collectively constituted with upper support section surface electrode Type beam free end lower surface depositing electrode, lower capacitor vibration pick-up structure is collectively constituted with lower support section surface electrode, two electric capacity pick up Structure composition of shaking differential capacitance vibration pick-up structure.
U-shaped beam, T-shaped beam, synchronous coupled beams and c-type supporting construction of the present invention are process by same substrate.
U-shaped beam of the present invention, T-shaped beam, synchronous coupled beams collectively constitute synchro-resonance structure, according to synchro-resonance thing Principle is managed, if low frequency beam intrinsic frequency is ω1, high frequency beam intrinsic frequency is ω2, its intrinsic frequency meets equation below：
mω1=n ω2
Wherein, m, n are integer, and m/n is the multiplication factor of frequency, and wherein low frequency beam is U-shaped beam, and high frequency beam is T-shaped Beam.
U-shaped beam free end surface coating quality sensitive thin film of the present invention is used for selective absorption material molecule.
Further, for described U-shaped beam compared to single rectangular beam, more compact structure, volume is smaller after encapsulation, but removes U-shaped Other also can be used to realize the girder construction of synchro-resonance outside.
There is upper insulating barrier T-shaped beam upper surface of the present invention by oxidation or other technological designs, and lower surface passes through oxygen Change or other technological designs have lower insulating barrier；
Piezoelectricity vibration pick-up structure of the present invention is Top electrode, piezoelectric layer, the sandwich structure of bottom electrode.
Multi-disc piezoelectric structure of the present invention can by mode of oscillation, application field it is different using longitudinally, laterally etc. no Same arrangement method.Each upper/lower electrode is sequentially connected in series, and forms piezoelectricity vibration pick-up structure.
Described piezoelectricity, pressure drag, electric capacity are superimposed by the present invention, three kinds of vibration pick-up structures can by resonance amplitude and frequency with Voltage signal is exported, polarised direction by controlling piezoelectric etc., and the superposition output voltage of three kinds of vibration pick-up structures can be made maximum Change.
It is an advantage of the invention that structure is novel, its advantage is embodied in：
(1) synchro-resonance physical principle is applied to resonant mode cantilever beam sensing arrangement, frequency multiplication can be achieved, improved and pass The sensitivity of sensor.
(2) U-shaped beam end area is larger, and binding molecule amount is more, and frequency changes greatly, and can improve transducer sensitivity.
(3) T-shaped beam free end is wider than the other parts of beam, can increase capacitor vibration pick-up structure output capacitance.Capacitor vibration pick-up The differential type design of structure can also improve the change of electric capacity, increase output voltage, improve detection resolution, and to a certain degree On can eliminate environment and influence the error brought.
(4) piezoelectricity vibration pick-up structure carries out multi-disc series design, is exaggerated output voltage, the detection for improving sensor is sensitive Degree.
(5) by better simply structure design, piezoelectricity, pressure drag, capacitor vibration pick-up structure are integrated in same structure, three Output signal is superimposed, and can be further exaggerated output voltage, be improved the detection sensitivity of sensor.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Wherein：U-shaped beam 1, mass-sensitive film 101, T-shaped beam 2, synchronous coupled beams 3, c-type supporting construction 4, piezoelectricity pick-up Structure 5, pressure drag vibration pick-up structure 6, upper capacitor vibration pick-up structure 7, T-shaped beam free end Top electrode 701, upper support section electrode 702, under Capacitor vibration pick-up structure 8, T-shaped beam free end bottom electrode 801, lower support section electrode 802, piezoelectric exciting structure 9；
Fig. 2 is c-type supporting construction side view of the present invention；
Wherein：Upper support structure insulating barrier 401, lower support structure insulating barrier 402, upper support section electrode 702, lower support Partial electrode 802；
Fig. 3 is synchro-resonance structure top view of the present invention；
Fig. 4 is the T-shaped beam side view of the present invention；
Wherein：Substrate beam 201, upper insulating barrier 202, lower insulating barrier 203, piezoelectric layer 501, piezoelectric layer Top electrode 502, piezoelectricity Layer bottom electrode 503, T-shaped beam free end Top electrode 701, T-shaped beam free end bottom electrode 801；
Fig. 5 is change curve of the present invention output total voltage with piezoelectric patches number；
Fig. 6 is T-shaped stress beam distribution map；
Fig. 7 A are the horizontal array structural representations for realizing many kinds of substance detection；
Fig. 7 B are the circular array structural representations for realizing many kinds of substance detection, and wherein fixed structure is located at center, dotted line It is single sensing arrangement in frame；
Fig. 7 C are the circular array structural representations for realizing many kinds of substance detection, and wherein fixed structure is located at outside, dotted line It is single sensing arrangement in frame.
Embodiment
Below with reference to accompanying drawing, the present invention is described in detail；It should be appreciated that preferred embodiment is only for explanation sheet Invention, the protection domain being not intended to be limiting of the invention.
As shown in figure 1, including U-shaped beam 1, mass-sensitive film 101, T-shaped beam 2, synchronous coupled beams 3, c-type supporting construction 4, Piezoelectricity vibration pick-up structure 5, pressure drag vibration pick-up structure 6, upper capacitor vibration pick-up structure 7, T-shaped beam free end Top electrode 701, upper support section electricity Pole 702, lower capacitor vibration pick-up structure 8, T-shaped beam free end bottom electrode 801, lower support section electrode 802, piezoelectric exciting structure 9；
The bottom of c-type supporting construction 4 is fixedly connected with piezoelectric exciting structure 9, the middle part of the c-type supporting construction 4 and U-shaped beam 1, T-shaped beam 2, synchronous coupled beams 3 are connected, and the both sides of T-shaped beam 2 and synchronous coupled beams 3 are connected, the inner side of U-shaped beam 1 also with synchronous coupling Beam 3 is connected, and the T-shaped upper surface of beam 2 deposition multi-disc piezoelectricity vibration pick-up structure 5, fixed end surfaces are provided with pressure drag vibration pick-up structure 6, T-shaped beam 2 free end upper surface depositing electrodes 701, upper capacitor vibration pick-up structure 7, T-shaped beam are collectively constituted with upper support section surface electrode 702 2 free end lower surface depositing electrodes 801, lower capacitor vibration pick-up structure 8, two electricity are collectively constituted with lower support section surface electrode 802 Hold vibration pick-up structure composition differential capacitance vibration pick-up structure.
U-shaped beam 1, T-shaped beam 2, synchronous coupled beams 3 and c-type supporting construction 4 are process by same substrate.
U-shaped beam 1, T-shaped beam 2, synchronous coupled beams 3 collectively constitute synchro-resonance structure, according to synchro-resonance physical principle, if Low frequency beam intrinsic frequency is ω1, high frequency beam intrinsic frequency is ω2, its intrinsic frequency meets equation below：
mω1=n ω2
Wherein, m, n are integer, and m/n is the multiplication factor of frequency, and wherein low frequency beam is U-shaped beam 1, and high frequency beam is T-shaped Beam 2.
Before quality or power detection is carried out, be present certain intrinsic frequency in girder construction, can be determined by testing or calculating. In embodiment, it is assumed that the first natural frequency of U-shaped beam 1 is f1, the first natural frequency of T-shaped beam 2 is f2, the intrinsic frequency of U-shaped beam 1 Rate is 1 with the T-shaped natural frequency ratio of beam 2:3, i.e. f2=3f1。
The free end surface coating quality sensitive thin film 101 of U-shaped beam 1 is used for selective absorption material molecule.When need When determining certain material mass, specific quality sensitive thin film 101 adsorbs the material molecule, now the quality increase of U-shaped beam 1, Resonant frequency shifts.U-shaped beam is compared to single rectangular beam, and more compact structure, volume is smaller after encapsulation, but in addition to U-shaped also Other can be used to realize the girder construction of synchro-resonance (such as rectangular beam, T-shaped beam, the symmetrical girder construction of π type beams).In the present embodiment In, complete quality testing using the U-shape structure that more Molecular Adsorptions can be achieved.
There are upper insulating barrier 202, lower surface in the upper surface of substrate beam 201 of the T-shaped beam by oxidation or other technological designs There is lower insulating barrier 203 by oxidation or other technological designs,
The piezoelectricity vibration pick-up structure 5 is Top electrode 502, piezoelectric layer 501, the sandwich structure of bottom electrode 503.
Whole sensing arrangement is positioned in the environment with measured matter, and drives the exciting of piezoelectric exciting structure 9 to sense Device.The first natural frequency of U-shaped beam (level off to) U-shaped, T-shaped beam produces amplitude multiplication under certain excited frequency, now occurs Synchro-resonance phenomenon.The superimposed alternation electricity of piezoelectricity vibration pick-up structure 5, pressure drag vibration pick-up structure 6, capacitor vibration pick-up structure 7,8 can be passed through Signal determines the resonant frequency f of T-shaped beam 2 after adsorbent2’。
Vibration of beam frequency can be scaled according to formula by the quality of girder construction, thus can be determined by the offset of frequency The quality of beam change, formula are as follows：
ρctc=∑ ρiti
mc=ρcAL
Wherein f is intrinsic frequency, and L is the length of rectangular cantilever beam, EiThe Young's modulus of i-th layer material, IiFor i-th layer of material Expect that for the moment of inertia, ρ be the density of material, A is the cross-sectional area of beam, and λ is the constant relevant with resonance mode.λ1=1.875, λ2 =4.694, λn≈(i-1/2)πmcFor cantilever beam quality, tiFor the i-th layer material thickness, ρiFor the i-th layer material density, tcFor cantilever Beam integral thickness.
If it is gas, the quality of the adsorption gas molecule of mass-sensitive film 101 and the linear pass of concentration to be detected target System, therefore concentration value can be calculated.
, it is necessary to realize that multiple gases detect by the array manufacture of beam, Fig. 7 A, 7B, 7C are three kinds in the process of the marketization The beam array structure design of multiple gases detection can be achieved.Wherein, Fig. 7 A are simple horizontal array structure；Fig. 7 B, Fig. 7 C are Two kinds of circular array methods, space-consuming are smaller.Fig. 7 B fixed structures are located at center, and placement is convenient and can be filled with detected environment Tap is touched；7C fixed structures are located at outside, can protect the cantilever beam sensor part at center.
Piezoelectricity, pressure drag, electric capacity superposition increase being described in detail below for sensitivity in embodiment：
Due to synchro-resonance structure, T-shaped beam vibrates at frequency of 3 times higher than excited frequency.According to the calculating of sensitivity Formula：
Wherein, w is cantilever beam width, and Δ f is the knots modification of resonant frequency, and Δ m is mass change.
Because frequency improves 3 times, in the case where girder construction is constant, sensitivity improves 3 times.
Multi-disc piezoelectric structure can use the different arrangement method such as longitudinally, laterally by mode of oscillation, the different of application field. Each upper/lower electrode is sequentially connected in series, and forms piezoelectricity vibration pick-up structure.Its total voltage connected can be represented with equation below：
Wherein, n is piezoelectricity vibration pick-up structure piece number, VtotalTo export total voltage, QiFor the electric charge of i-th piezoelectricity vibration pick-up structure Amount, CiFor the electric capacity of i-th piezoelectricity vibration pick-up structure.
Assume that piezoelectricity vibration pick-up structure 5 is placing 5 along beam direction in the present embodiment, every plate shape, size are identical.Every The producible quantity of electric charge of piezoelectricity vibration pick-up structure can be represented by equation below：
Wherein, d31For horizontal piezoelectric constant, EpFor piezoelectric layer Young's modulus, ZPFor piezoelectric layer to neutral axis distance, l is pressure Electric structure length, L are the length w of beamEFor monolithic piezoelectric structure width, IiIt is the i-th layer material to itself neutral equatorial moment of inertia, Ai For the i-th layer material cross-sectional area.QindFor monolithic piezoelectric vibration pick-up structure output charge amount.
The total voltage of multi-disc cascaded structure can be represented with monolithic structure voltage ratio of the same area with equation below：
Output voltage improves 5 times compared to the piezoelectric structure of equal area full wafer after multi-disc series connection can be tried to achieve.Wherein, wE' it is full wafer piezoelectricity vibration pick-up structure width, Q 'indThe full wafer piezoelectricity vibration pick-up structure quantity of electric charge, V 'totalMonolithic structure output voltage.
Bring dimensional values into and calculate piezoelectric layer and total voltage V is exported at 1,2,4,6,8,10totalNumerical value, obtain bent Line is as shown in Figure 5, it is seen that with the piece number increase of piezoelectric layer, output total voltage constantly increases, linear.
Pressure drag vibration pick-up structure 6 is located at cantilever beam fixing end upper surface with techniques such as ion implantings, and fixed end surfaces are by stress Maximum, change in resistance is big, and output voltage is big.
Pressure drag vibration pick-up structure 6 forms Wheatstone bridge with non-essential resistance, and the change of its resistance is measured by output voltage：
Wherein, VinFor input voltage, VoutFor output voltage, Δ R is the change of pressure drag vibration pick-up structure resistance, and R picks up for pressure drag Structure of shaking resistance.
For each point stress on T-shaped beam 2 as shown in fig. 6, from Analysis of materials mechanics, T-shaped beam 2 is maximum in fixing end stress, Simulation result in Fig. 6 also susceptible of proof this point.
Because electric capacity is differential design, the variation delta C of electric capacity is：
Δ C=C1-C2
Wherein, C1For supporting construction bottom electrode 802 and T-shaped beam free end bottom electrode shape 801 into capacitance, C2For support The capacitance that structure Top electrode 702 is formed with T-shaped beam free end Top electrode 701.
T-shaped beam free end width is 2 times of ordinary rectangular beam width, thus the change right and wrong of differential capacitance structure capacitive More than 2 times of differential type rectangular beam structures.The sensitivity of capacitance structure can not only be increased using differential capacitor, improve sensor Detection sensitivity, and environment can be eliminated to a certain extent influence the error brought.
Resonance amplitude and frequency voltage signal output can be controlled piezoelectric by three kinds of described vibration pick-up structures Polarised direction, it is exported negative voltage when deflecting down, the output voltage of three kinds of vibration pick-up structures can be superimposed, amplify voltage Value, so as to further improve the detection sensitivity of sensor.

Claims (7)

  1. A kind of 1. high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor based on synchro-resonance, it is characterised in that：C-type supports Structure bottom is fixedly connected with piezoelectric exciting structure, the middle part of the c-type supporting construction and U-shaped beam, T-shaped beam, synchronous coupled beams phase Even, the both sides of T-shaped beam are connected with synchronous coupled beams, and the inner side of U-shaped beam is also connected with synchronous coupled beams, T-shaped beam upper surface deposition Multi-disc piezoelectricity vibration pick-up structure, fixed end surfaces are provided with pressure drag vibration pick-up structure, T-shaped beam free end upper surface depositing electrode, and upper Support section surface electrode collectively constitutes capacitor vibration pick-up structure, T-shaped beam free end lower surface depositing electrode, with lower support section Surface electrode collectively constitutes lower capacitor vibration pick-up structure, two capacitor vibration pick-up structures composition differential capacitance vibration pick-up structure.
  2. 2. the high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor according to claim 1 based on synchro-resonance, its It is characterised by：Described U-shaped beam, T-shaped beam, synchronous coupled beams and c-type supporting construction is process by same substrate.
  3. 3. the high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor according to claim 1 or 2 based on synchro-resonance, It is characterized in that：Described U-shaped beam, T-shaped beam, synchronous coupled beams collectively constitute synchro-resonance structure, according to synchro-resonance physics Principle, if low frequency beam intrinsic frequency is ω1, high frequency beam intrinsic frequency is ω2, its intrinsic frequency meets equation below：
    mω1=n ω2
    Wherein, m, n are integer, and m/n is the multiplication factor of frequency, and wherein low frequency beam is U-shaped beam, and high frequency beam is T-shaped beam.
  4. 4. the high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor according to claim 1 based on synchro-resonance, its It is characterised by：Described U-shaped beam free end surface coating quality sensitive thin film is used for selective absorption material molecule.
  5. 5. the high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor according to claim 1 based on synchro-resonance, its It is characterised by：There is a upper insulating barrier described T-shaped beam upper surface by oxidation or other technological designs, lower surface by oxidation or its His technological design has lower insulating barrier.
  6. 6. the high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor according to claim 1 based on synchro-resonance, its It is characterised by：Piezoelectricity vibration pick-up structure is Top electrode, piezoelectric layer, the sandwich structure of bottom electrode.
  7. 7. the high sensitivity piezoelectricity pressure drag electric capacity superposition force-sensing sensor according to claim 1 based on synchro-resonance, its It is characterised by：Described multi-disc piezoelectricity vibration pick-up structure is gone here and there successively using longitudinally, laterally different arrangement modes, each upper/lower electrode Connection, form piezoelectricity vibration pick-up structure.
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