CN113340986B - High-resolution sensor and method for collaborative regulation and control of parameter excitation and synchronous resonance - Google Patents

High-resolution sensor and method for collaborative regulation and control of parameter excitation and synchronous resonance Download PDF

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CN113340986B
CN113340986B CN202110665132.6A CN202110665132A CN113340986B CN 113340986 B CN113340986 B CN 113340986B CN 202110665132 A CN202110665132 A CN 202110665132A CN 113340986 B CN113340986 B CN 113340986B
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CN113340986A (en
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夏操
王东方
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Jilin University
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    • G01N29/036Analysing fluids by measuring frequency or resonance of acoustic waves
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    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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Abstract

The invention belongs to the technical field of sensors, and particularly relates to a high-resolution sensor and a method for collaborative regulation and control of parameter excitation and synchronous resonance; the synchronous beam is connected with the reference beam through a coupling unit; the two ends of the excitation beam are provided with a first excitation unit and a first detection unit, the upper surface of the excitation beam is deposited with a sensitive layer, the excitation beam at the front end of the sensitive layer is provided with an excitation unit, and the two ends of the synchronous beam are provided with a second excitation unit and a second detection unit; the method provides a new idea of the cooperative regulation and control sensing of parameter excitation and synchronous resonance for the first time, utilizes the parameter excitation vibration to improve the vibration amplitude of the parameter excitation beam, and utilizes the synchronous resonance to restrain the phase noise of the synchronous beam. The invention designs a double-end solid support coupling beam sensing structure, and can realize ultra-high resolution early warning and detection of trace substances (weak force) by utilizing the amplitude jump characteristic of the parametric excitation vibration under the synchronous resonance effect and the ultra-high resolution frequency characteristic of the synchronous resonance under the parameter excitation.

Description

High-resolution sensor and method for collaborative regulation and control of parameter excitation and synchronous resonance
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a high-resolution sensor and a method for collaborative regulation and control of parameter excitation and synchronous resonance.
Background
Resonant sensors based on MEMS sensing technology have been a research hotspot in the sensor field. The resonant sensor generally adopts a micro-beam with higher sensitivity as a sensitive structure, and detects trace substances or weak force by comparing the micro-beam resonance frequency deviation caused by the mass change before and after interaction between a sensitive layer (film) attached on the micro-beam and the to-be-detected substance or the rigidity change before and after the to-be-detected force. The sensor can realize detection of various gases only by replacing the sensitive film on the surface of the harmonic oscillator, has the advantages of high sensitivity, short response time, small size, easy integration, convenient carrying and the like, and is widely applied to the fields of civil/industrial safety and the like.
In 1984, r.t. howe et al, division of berkeley, california, first proposed a microbridge-based resonant gas sensor, which has greatly improved detection sensitivity compared with other gas detection methods. T.thunder et al in the national laboratory of Oak Kaolin in the United states use V-shaped silicon nitride cantilever as a carrier, coat a layer of gold film on the upper surface of the cantilever, through analyzing the deviation of dynamic resonance vibration frequency, has realized the detection to mercury vapor. The L.Fadel et al of university of Boerdo, france, designed a resonant sensor for detecting volatile organic gases, with a mass sensitivity of 0.06Hz ng -1, and an ethanol detection accuracy of 14X 10 -6. The detection lower limit of the vibration characteristics of the adsorption gas of different sensitive films by analyzing the vibration characteristics of the adsorption gas of the different sensitive films by the D.GarcI a-Romeo team of the university of Sarogosa in Spain can reach 100ppb. The piezoelectric resonant micro-beam gas sensor is developed by the method of sol-gel technology of the compound denier university Zhou Jia and the like, the sensor has linear response within the range of 100 multiplied by 10 -6, the sensitivity reaches 0.0024 percent multiplied by 10 -6, and the minimum measurable mass is 3.5 multiplied by 10 -9 g. The high-resolution piezoresistive detection type silicon dioxide micro-beam resonant sensor is designed by the Shanghai microsystem Li Xinxin et al, the minimum detection gas concentration can reach ppb level, and the sensitivity can reach (20-30) multiplied by 10 -9; the use of parametric excitation to achieve amplitude transitions and amplitude amplification of the resonant structure is advantageous for improving the resolution of the sensor. The K.L.Turner team of Santa Barbara division of California university in the United states uses parameter excitation for the first time to study the monocrystal silicon micro-resonance structure, and the frequency shift of the tongue boundary bifurcation point of the Arnold excited by the measured parameter is used for realizing pg-level quality detection, so that the sensitivity of the detection is improved by 1-2 orders of magnitude compared with that of the traditional resonance type quality sensor. Based on data statistical analysis, the frequency offset of fork-shaped bifurcation is measured by utilizing the noise extrusion effect, so that DNT gas molecules are detected in the atmosphere; based on the synchronous resonance principle of nonlinear vibration mechanics, the frequency multiplication effect of low-frequency excitation and high-frequency vibration pickup can be realized, and the resolution of the sensor is improved. The Jilin university Wang Dongfang teaches that analyzing the effect of small mass disturbances on the frequency range of the synchronous resonance region, the use of synchronous resonance reduces the phase noise of Gao Pinliang, enabling the resolution of the pg-level of the resonant sensor. Although the existing resonant micro-beam sensor can realize higher resolution, the concentration of dangerous gas generated in the fields of atmospheric environment/micro-environment, mineral resource detection, explosive and highly toxic substance detection and the like is generally in the ppb-ppm (10 -9-10-6) range, and exceeds the detection lower limit of the existing resonant sensor. To expand the applications of resonant sensors in the above-mentioned fields, it is necessary to further increase the resolution of the sensor and reduce the power consumption of the sensor to meet the long-term monitoring requirements.
Disclosure of Invention
In order to overcome the problems, the invention provides a high-resolution sensor and a method for cooperatively regulating and controlling parameter excitation and synchronous resonance, which firstly provide a new idea of cooperatively regulating and controlling the parameter excitation and the synchronous resonance, utilize the parameter excitation vibration to improve the vibration amplitude of a parameter excitation beam and utilize the synchronous resonance to inhibit the phase noise of the synchronous beam. The invention designs a double-end solid support coupling beam sensing structure, and can realize ultra-high resolution early warning and detection of trace substances (weak force) by utilizing the amplitude jump characteristic of the parametric excitation vibration under the synchronous resonance effect and the ultra-high resolution frequency characteristic of the synchronous resonance under the parameter excitation.
The invention aims at realizing the following technical scheme:
The high-resolution sensor comprises a parameter excitation beam 2, a synchronous beam 3, a coupling unit 4, a sensitive layer 5, an excitation unit, a parameter excitation unit 7, a detection unit and a base 1, wherein two ends of the parameter excitation beam 2 and the synchronous beam 3 are fixed on the base 1, and the parameter excitation beam 2 and the synchronous beam 3 are connected through the coupling unit 4; the two ends of the excitation beam 2 are respectively provided with a first excitation unit 601 and a first detection unit 801, the upper surface of the middle part of the excitation beam is deposited with a sensitive layer 5, the excitation beam 2 at the front end of the sensitive layer 5 is provided with an excitation unit 7, and the two ends of the synchronous beam 3 are respectively provided with a second excitation unit 602 and a second detection unit 802.
The base 1 comprises a left base block and a right base block, and two ends of the reference beam 2 and the synchronous beam 3 are respectively fixed on the left base block and the right base block.
The coupling unit 4 is a mechanical coupling structure, the mechanical coupling structure is a cantilever beam, the root, namely the rear end part, of the mechanical coupling structure is fixed on the base 1, the left side and the right side of the mechanical coupling structure are respectively connected to the inner side surfaces of the reference beam 2 and the synchronous beam 3, and rectangular through holes are uniformly distributed on the coupling unit 4.
The coupling unit 4 is a capacitive coupling, magnetic coupling or optical coupling structure.
The first excitation unit 601, the second excitation unit 602 and the parametric excitation unit 7 are driving structures based on piezoelectric ceramics, parallel plate capacitors, comb capacitors or thermal resistance principles.
The excitation unit 7 is a piezoelectric ceramic driving structure and comprises a first piezoelectric layer 701, a first upper electrode 702 and a first lower electrode 703, wherein the first upper electrode 702 is fixed on the first piezoelectric layer 701, and the first piezoelectric layer 701 is fixed on the first lower electrode 703.
The first detection unit 801 and the second detection unit 802 are capable of converting vibrations into voltage signals.
The first detection unit 801 and the second detection unit 802 have the same structure, and each include a second piezoelectric layer 80101, a second upper electrode 80102, and a second lower electrode 80103, where the second upper electrode 80102 is fixed on the second piezoelectric layer 80101, and the second piezoelectric layer 80101 is fixed on the second lower electrode 80103.
The sensitive layer 5 is a specific adsorption film, a molecular sieve or a magnetic sensitive layer.
The parametric beam 2 and the synchronous beam 3 are both double-end clamped beams, and the shape, the size and the natural frequency of the parametric beam are the same.
The excitation beam 2, the synchronous beam 3, the coupling unit 4 and the base 1 are integrated.
The synchronous beam 3 is a cantilever beam, a resonant ring or a resonant cavity.
The high-resolution sensing method for the cooperative regulation and control of the parameter excitation and the synchronous resonance comprises the following steps:
step one, applying alternating voltage to a first excitation unit 601 on a parametric excitation beam 2 through an alternating current power supply of a parametric excitation circuit, gradually increasing the output frequency of the alternating current power supply, and exciting a parametric excitation unit 7 on the parametric excitation beam 2 through frequency sweep of the natural frequency of the parametric excitation beam 2;
step two, a direct driving branch of the self-oscillation circuit is connected through a selection switch, alternating voltage is applied to a second excitation unit 602, so that the second excitation unit 602 on the synchronous beam 3 is excited, after the output voltage amplitude of a second detection unit 802 on the synchronous beam 3 is stable, the selection switch is adjusted to a negative feedback driving branch of the self-oscillation circuit, and the synchronous beam 3 is excited in a closed loop through the negative feedback driving branch of the self-oscillation circuit;
Step three, detecting a voltage signal of a second detection unit 802 on the synchronous beam 3, and calibrating the initial resonant frequency of the synchronous beam 3 through Fourier transformation;
Step four, placing the sensor in an environment of a substance or force to be detected;
Step five, applying a constant-frequency alternating voltage to the first excitation unit 601 through an alternating current power supply of the parametric excitation circuit, and exciting the parametric excitation beam 2 at a constant frequency at the natural frequency of the parametric excitation beam 2;
step six, a fixed-frequency alternating voltage is applied to the reference excitation unit 7 through a reference excitation circuit, the fixed-frequency excitation of the reference excitation unit 7 is realized, the excitation frequency of the fixed-frequency excitation unit 7 is twice that of the first excitation unit 601, and the signal output of the second detection unit 802 on the synchronous beam 3 is further increased;
step seven, an alternating voltage is applied to the second excitation unit 602 through a direct driving branch circuit of the self-excited oscillation circuit which is connected with the selection switch, so that the second excitation unit 602 on the synchronous beam 3 is excited, after the amplitude of the output voltage of the second detection unit 802 is stable, the selection switch is adjusted to a negative feedback driving branch circuit of the self-excited oscillation circuit, and the synchronous beam 3 is excited in a closed loop through the negative feedback driving branch circuit of the self-excited oscillation circuit;
Step eight, the natural frequency of the reference excitation beam 2 is adjusted in proportion by adjusting the output voltage of a direct current power supply of a direct current bias circuit in the reference excitation circuit, so that single frequency reference excitation synchronous resonance occurs between the reference excitation beam 2 and the synchronous beam 3;
Step nine, when the output voltage value of the first detection unit 801 drops or increases suddenly, it is indicated that the amplitude jump occurs in the reference beam 2, so as to realize the early warning of trace substances to be detected or weak force to be measured; otherwise, repeating the fifth step to the eighth step;
step ten, exciting the parametric excitation unit 7 on the parametric excitation beam 2 by gradually increasing the output frequency of an alternating current power supply in the parametric excitation circuit and sweeping the natural frequency of the parametric excitation beam 2, and canceling the alternating current voltage applied to the first excitation unit 601 of the parametric excitation beam 2;
Step eleven, detecting the voltage signal of the second detection unit 802 on the synchronization beam 3, obtaining the resonance frequency of the synchronization beam 3, namely the sensing resonance frequency, through fourier transformation, and realizing the high-resolution sensing of the mass m g of the trace amount of the substance to be measured or the weak force to be measured F g, wherein
Where f is the initial resonant frequency calibrated by the synchronization beam 3, f' is the sensing resonant frequency of the synchronization beam 3, and k is the linear stiffness of the synchronization beam 3.
The reference circuit in the first, fifth and sixth steps is an open loop circuit formed by sequentially connecting an alternating current power supply, a capacitor, an amplifier, a frequency multiplier and a direct current bias circuit in sequence; the direct current bias circuit is formed by connecting an inductor and a direct current power supply; the frequency multiplier is connected with an inductor in the direct current bias circuit, and the output voltage of the capacitor acts on the first excitation unit 601; the frequency multiplier output voltage acts as a final voltage on the reference cell 7.
The self-oscillation circuit consists of a direct drive branch, a negative feedback drive branch and a direct current bias circuit; wherein, the direct driving branch is an open loop circuit formed by sequentially connecting an alternating current power supply, a selection switch and a capacitor in sequence, and the second excitation unit 602 is connected with the capacitor; and the initial excitation frequency of the AC power supply output is set as the natural frequency of the synchronous beam 3;
The negative feedback driving branch is a closed loop formed by sequentially connecting an amplifier, a band-pass filter, a limiter, a phase shifter, a selection switch and a capacitor end to end; the second excitation unit 602 is connected to a capacitor, the second detection unit 802 is connected to an amplifier, and the output voltage of the second detection unit 802 acts on the second excitation unit 602 as a final voltage output after passing through the amplifier, the band-pass filter, the limiter, the phase shifter, the selection switch and the capacitor.
The invention has the beneficial effects that:
the sensor of the invention utilizes the amplitude jump phenomenon of the parametric excitation vibration of the parametric excitation beam to perform the early warning of trace substances to be measured (weak force to be measured), and has extremely high resolution.
The sensor of the invention utilizes the frequency shift characteristic of the synchronous beam to detect trace substances to be detected (weak force to be measured), and greatly reduces the phase noise of the synchronous beam and improves the vibration stability of the synchronous beam and greatly improves the sensing resolution due to the synchronous resonance between the synchronous beam and the synchronous beam.
Compared with the traditional direct detection method, the sensing method adopting early warning and then detection can accurately judge the existence of the extremely trace substances (or extremely weak forces) in advance and distinguish the extremely trace substances from external disturbance, thereby greatly reducing the probability of false sensing of the sensor under the extremely trace magnitude.
The excitation beam and the synchronous beam are connected through the coupling unit, so that excitation and vibration pickup are separated, and the influence of the surface loss of the excitation beam on detection can be eliminated.
Drawings
FIG. 1 is a schematic diagram of a sensor structure according to embodiment 1 of the present invention;
FIG. 2 is an enlarged view of a portion of the sensor shown in FIG. 1;
FIG. 3 is a diagram of a sensor sensing early warning mechanism;
FIG. 4 is a diagram of a sensor sensing detection mechanism;
FIG. 5 is a circuit diagram of a sensor;
FIG. 6 is a schematic diagram of the sensor structure as a whole based on thermal resistance parametric excitation;
FIG. 7 is an enlarged view of a portion of a sensor structure based on thermal resistance parametric excitation;
FIG. 8 is an overall schematic of an H-shaped sensor structure based on a center coupling structure;
FIG. 9 is an overall schematic diagram of a sensor structure based on parallel plate electrostatic excitation structure and capacitive coupling;
FIG. 10 is an overall schematic diagram of a sensor structure based on electrostatic comb excitation structure and capacitive coupling;
FIG. 11 is an enlarged view of a portion of a sensor structure based on electrostatic comb excitation structures and capacitive coupling;
FIG. 12 is a circuit diagram of a capacitive coupling based sensor and electrostatic comb excitation structure.
Wherein: the device comprises a base 1, a 2-parameter excitation beam, a 3-synchronous beam, a 4-coupling unit, a 5-sensitive layer, a 601 first excitation unit, a 60101 third piezoelectric layer, a 60102 third upper electrode, a 60103 third lower electrode, 60104 electrostatic comb teeth, a 60105 electrode, a 602 second excitation unit, a 7-parameter excitation unit, a 701 first piezoelectric layer, a 702 first upper electrode, a 703 first lower electrode, a 801 first detection unit, a 80101 second piezoelectric layer, a 80102 second upper electrode, a 80103 second lower electrode, a 80104 left electrode, a 80105 right electrode first, an 802 second detection unit, an 80201 left electrode second, and an 80202 right electrode second.
Detailed Description
The present invention will be described in detail below with reference to the attached drawings; it should be understood that the preferred embodiments are presented by way of illustration only and not by way of limitation.
Example 1
The invention is shown in the overall schematic view of the scheme of fig. 1 and 2, a high-resolution sensor with cooperative regulation and control of parameter excitation and synchronous resonance, which comprises a excitation beam 2, a synchronous beam 3, a coupling unit 4, a sensitive layer 5, an excitation unit, a excitation unit 7, a detection unit and a base 1, wherein the two ends of the excitation beam 2 and the synchronous beam 3 are fixed on the base 1, and the excitation beam 2 and the synchronous beam 3 are connected through the coupling unit 4 to form a double-end support coupling beam; the two ends of the excitation beam 2 are respectively provided with a first excitation unit 601 and a first detection unit 801, a sensitive layer 5 is deposited on the upper surface of the middle part-central position in the length direction of the excitation beam 2, the excitation unit 7 is arranged on the excitation beam 2 at the front end of the sensitive layer 5, a distance exists between the excitation unit 7 and the first detection unit 801 on the excitation beam 2, and the two ends of the synchronization beam 3 are respectively provided with a second excitation unit 602 and a second detection unit 802.
The base 1 comprises a left base block and a right base block, and two ends of the reference beam 2 and the synchronous beam 3 are respectively fixed on the left base block and the right base block.
The coupling unit 4 is a mechanical coupling structure, the mechanical coupling structure is a cantilever beam, the root, namely the rear end part, of the mechanical coupling structure is fixed on the base 1, the left side and the right side of the mechanical coupling structure are respectively connected to the inner side surfaces of the reference beam 2 and the synchronous beam 3, and rectangular through holes are uniformly distributed on the coupling unit 4. Rectangular through holes are uniformly distributed on the surface of the coupling unit 4 to reduce coupling rigidity.
The coupling unit 4 is a non-contact coupling structure of capacitive coupling, magnetic coupling or optical coupling. The non-contact coupling structure is composed of two coupling poles respectively fixed on the reference beam 2 and the synchronous beam 3. For example, the capacitive coupling structure is formed by parallel capacitive plates or comb-tooth capacitive plates fixed to the inner side surfaces of the reference beam 2 and the synchronization beam 3, respectively.
The first excitation unit 601, the second excitation unit 602 and the parametric excitation unit 7 are driving structures based on piezoelectric ceramics, parallel plate capacitors, comb capacitors or thermal resistance principles. The excitation unit based on the piezoelectric ceramic and thermal resistance principle is fixed at the root of one end of the excitation beam 2 and the synchronous beam 3, and the excitation unit 7 based on the piezoelectric ceramic and thermal resistance principle is fixed at the root of the other end of the excitation beam 2; the excitation unit based on the parallel plate capacitance and comb capacitance principles is fixed on the lower surface of the central position of the length direction of the excitation beam 2 and the synchronous beam 3, and the excitation unit 7 based on the parallel plate capacitance and comb capacitance principles is fixed on the lower surface of the central position of the length direction of the excitation beam 2.
The excitation unit 7 is a piezoelectric ceramic driving structure and comprises a first piezoelectric layer 701, a first upper electrode 702 and a first lower electrode 703, wherein the first upper electrode 702 is fixed on the first piezoelectric layer 701, and the first piezoelectric layer 701 is fixed on the first lower electrode 703.
The first detection unit 801 and the second detection unit 802 both adopt a piezoelectric or piezoresistive principle, and can convert vibration into a voltage signal. And are respectively fixed at the front root parts of the reference beam 2 and the synchronous beam 3.
The first detection unit 801 and the second detection unit 802 have the same structure, and each include a second piezoelectric layer 80101, a second upper electrode 80102, and a second lower electrode 80103, where the second upper electrode 80102 is fixed on the second piezoelectric layer 80101, and the second piezoelectric layer 80101 is fixed on the second lower electrode 80103.
The sensitive layer 5 can be a specific adsorption film, a molecular sieve or a magnetic sensitive layer and other sensitive structures according to different substances or forces to be detected.
The parametric beam 2 and the synchronous beam 3 are both double-end clamped beams, and the shape, the size and the natural frequency of the parametric beam are the same.
The excitation beam 2, the synchronous beam 3, the coupling unit 4 and the base 1 are integrated. The ginseng excitation beam 2, the synchronous beam 3, the coupling unit 4 and the base 1 are processed by the same silicon substrate.
The synchronous beam 3 is a cantilever beam, a resonant ring or a resonant cavity.
As shown in fig. 3 and 4, the high-resolution sensing method with cooperative regulation and control of parameter excitation and synchronous resonance is carried out according to the following steps:
Step one, applying alternating voltage to a first excitation unit 601 on a parametric excitation beam 2 through an alternating current power supply of a parametric excitation circuit, gradually increasing the output frequency of the alternating current power supply, and sweeping and exciting a parametric excitation unit 7 on the parametric excitation beam 2 near the natural frequency of the parametric excitation beam 2;
step two, a direct driving branch of the self-oscillation circuit is connected through a selection switch, alternating voltage is applied to a second excitation unit 602, so that the second excitation unit 602 on the synchronous beam 3 is excited, after the output voltage amplitude of a second detection unit 802 on the synchronous beam 3 is stable, the selection switch is adjusted to a negative feedback driving branch of the self-oscillation circuit, and the synchronous beam 3 is excited in a closed loop through the negative feedback driving branch of the self-oscillation circuit;
Step three, detecting a voltage signal of a second detection unit 802 on the synchronous beam 3, and calibrating the initial resonant frequency of the synchronous beam 3 through Fourier transformation;
Step four, placing the sensor in an environment of a substance or force to be detected;
Step five, applying a constant-frequency alternating voltage to a first excitation unit 601 on the reference excitation beam 2 through an alternating current power supply of the reference excitation circuit, and exciting the reference excitation beam 2 at a constant frequency at the natural frequency of the reference excitation beam 2; adjusting the frequency of the voltage applied to the first excitation unit 601, namely the excitation frequency of the first excitation unit 601, until the natural frequency of the reference excitation beam 2 is reached, so as to realize excitation of the reference excitation beam 2;
Step six, applying a fixed-frequency alternating voltage to the parametric excitation unit 7 on the parametric excitation beam 2 through the parametric excitation circuit, and exciting the parametric excitation unit 7 at a fixed frequency, wherein the exciting frequency is twice that of the first exciting unit 601, namely applying an alternating voltage with a frequency which is about twice that of the inherent frequency of the parametric excitation beam 2, so as to further increase the signal output of the second detecting unit 802 on the synchronous beam 3;
Step seven, the direct driving branch of the self-oscillation circuit is connected through a selection switch, alternating voltage is applied to the second excitation unit 602, so that the second excitation unit 602 on the synchronous beam 3 is excited, after the output voltage amplitude of the second detection unit 802 on the synchronous beam 3 is stable, the multi-path selection switch is adjusted to the negative feedback driving branch of the self-oscillation circuit, and the synchronous beam 3 is excited in a closed loop through the negative feedback driving branch of the self-oscillation circuit;
Step eight, the natural frequency of the reference excitation beam 2 is adjusted in proportion by adjusting the output voltage of a direct current power supply of a direct current bias circuit in the reference excitation circuit, so that single frequency reference excitation synchronous resonance occurs between the reference excitation beam 2 and the synchronous beam 3;
The frequency multiplier in the reference excitation circuit is connected with the direct current offset circuit in parallel, the frequency multiplier outputs alternating voltage, the direct current power supply of the direct current offset circuit outputs direct current voltage, and a voltage signal containing both the alternating voltage and the direct current voltage is output to the reference excitation unit 7 through a connection point of the frequency multiplier and the direct current offset circuit; the alternating voltage signal is used for periodic driving, and the direct voltage is used for adjusting the natural frequency of the motor 2.
The increase of the dc bias voltage of the reference excitation unit 7 will cause the natural frequency of the reference excitation beam 2 to increase, indicating that synchronous resonance occurs when the vibration frequencies of the reference excitation beam 2 and the synchronous beam 3 are accurately locked to the same magnitude.
Step nine, when the output voltage value of the first detection unit 801 drops or increases suddenly, it is indicated that the amplitude jump occurs in the reference beam 2, so as to realize the early warning of trace substances to be detected or weak force to be measured; otherwise, repeating the fifth step to the eighth step;
The output voltage of the first detection unit 801 is always proportional to the amplitude of the reference beam 2, the steep drop (or steep increase) of the output voltage value of the first detection unit 801 indicates that the amplitude of the reference beam 2 is steep drop (or steep increase), and the early warning of the substance to be detected is realized according to the characteristic of the steep drop (or steep increase) of the voltage value;
Step ten, exciting the parametric excitation unit 7 on the parametric excitation beam 2 by gradually increasing the output frequency of the alternating current power supply in the parametric excitation circuit, and canceling the alternating current voltage applied to the first excitation unit 601 of the parametric excitation beam 2 by sweeping around the natural frequency of the parametric excitation beam 2;
step eleven, detecting the voltage signal of the second detection unit 802 on the synchronization beam 3, obtaining the resonance frequency of the synchronization beam 3, namely the detected resonance frequency-sensing resonance frequency, by fourier transformation, to realize high resolution sensing of the mass m g of the trace amount of the substance to be measured or the weak force to be measured F g, wherein
Where f is the initial resonant frequency calibrated by the synchronization beam 3, f' is the sensing resonant frequency of the synchronization beam 3, and k is the linear stiffness of the synchronization beam 3.
As shown in fig. 5, the parameter excitation circuits in the first, fifth and sixth steps are open-loop circuits formed by sequentially connecting an ac power supply, a capacitor, an amplifier, a frequency multiplier and a dc bias circuit; the direct current bias circuit is formed by connecting an inductor and a direct current power supply; the frequency multiplier is connected with an inductor in the direct current bias circuit, and the output voltage of the capacitor acts on the first excitation unit 601; the frequency multiplier output voltage acts as a final voltage on the reference cell 7.
Wherein the parametric excitation alternating voltage U P applied to the parametric excitation unit 7 is:
Up=VDC+VAC cos 2Ωt
Wherein V DC、VAC, omega and t are respectively the DC bias voltage, the AC voltage amplitude and the 0.5 times of the AC voltage frequency value and the time of the parameter excitation alternating voltage, which are the output voltages of the parallel interfaces of the frequency multiplier and the DC bias circuit, and the omega is approximately equal to the inherent frequency value of the reference beam 2, wherein the DC bias voltage, the AC voltage amplitude and the AC voltage frequency value are respectively obtained by measuring the DC power supply voltage, the amplitude and the frequency of the AC power supply output voltage in the reference circuit.
Since the alternating voltage is applied to the first excitation unit 601, the vibration amplitude gain of the reference beam 2 is:
wherein V t is an alternating voltage threshold value at which parametric resonance occurs, the voltage of the first excitation unit 601 output to the parametric beam 2 by the parametric circuit is measured, and phi is the initial phase difference of the alternating voltages of the parametric unit 7 and the first excitation unit 601;
the parameter excitation circuit is used for applying alternating voltage with the frequency being about twice the natural frequency of the parameter excitation beam 2 to the parameter excitation unit 7 of the parameter excitation beam 2, so that the parameter excitation of the parameter excitation beam 2 is realized.
The self-oscillation circuit consists of a direct drive branch, a negative feedback drive branch and a direct current bias circuit; wherein, the direct driving branch is an open loop circuit formed by sequentially connecting an alternating current power supply, a selection switch and a capacitor in sequence, and the second excitation unit 602 is connected with the capacitor; and the initial excitation frequency of the AC power supply output is set as the natural frequency of the synchronous beam 3;
The negative feedback driving branch is a closed loop formed by sequentially connecting an amplifier, a band-pass filter, a limiter, a phase shifter, a selection switch and a capacitor end to end; the second excitation unit 602 is connected to a capacitor, the second detection unit 802 is connected to an amplifier, and the output voltage of the second detection unit 802 acts on the second excitation unit 602 as a final voltage output after passing through the amplifier, the band-pass filter, the limiter, the phase shifter, the selection switch and the capacitor.
The direct current bias circuit is formed by connecting an inductor and a direct current power supply.
Example 2
As shown in fig. 6 and 7, the same as in embodiment 1 is distinguished in that:
The parametric excitation unit 7 based on the thermal resistance principle comprises two thermal resistance wires 704 and a left electrode 705, wherein the left electrode 705 is fixed at the root of the parametric excitation beam 2, and the two thermal resistance wires 704 are respectively arranged on the upper surfaces of the parametric excitation beam 2 at the two ends of the sensitive layer 5;
the first excitation unit 601 is a driving structure based on piezoelectric ceramics, and comprises a third piezoelectric layer 60101, a third upper electrode 60102 and a third lower electrode 60103, wherein the third upper electrode 60102 is fixed on the third piezoelectric layer 60101, and the third piezoelectric layer 60101 is fixed on the third lower electrode 60103.
Example 3
As shown in fig. 8, the same as in example 1 is distinguished in that:
the coupling unit 4 is a mechanical coupling structure and is fixed between the middle parts of the reference beam 2 and the synchronization beam 3.
Example 4
As shown in fig. 9 and 12, the same as in embodiment 1 is distinguished in that:
The base 1 is a panel with an opening in the middle.
The coupling unit 4 is a capacitive coupling structure.
The first excitation unit 601 and the second excitation unit 602 are both driving structures based on the parallel plate capacitance principle.
The first detecting unit 801 includes a left electrode 80104 and a right electrode 80105; the second detection unit 802 includes a second left electrode 80201 and a second right electrode 80202; the left electrode I80104 and the left electrode II 80201 are fixed at the left end of the base 1, the right end parts of the left electrode I80104 and the left electrode II 80201 are respectively fixed at the left end parts of the synchronous beam 3 and the reference beam 2, the right electrode I80105 and the right electrode II 80202 are fixed at the right end of the base 1, and the left end parts of the right electrode I80105 and the right electrode II 80202 are respectively fixed at the right end parts of the synchronous beam 3 and the reference beam 2.
The first excitation unit 601 and the second excitation unit 602 are both fixed on the base 1, and the inner sides of the first excitation unit 601 and the second excitation unit 602 are respectively fixed on the lower surfaces of the central positions of the synchronous beam 3 and the reference beam 2 in the length direction.
At this time, the first excitation unit 601 is also the reference excitation unit 7, and in this embodiment, the function of the reference excitation unit 7 may be covered by the first excitation unit 601, so that the two units share a structure.
Example 5
As shown in fig. 10 and 11, the same as in embodiment 4 is distinguished in that:
The first excitation unit 601 and the second excitation unit 602 are all driving structures based on the comb capacitance principle, and each driving structure comprises an electrostatic comb 60104 and an electrode 60105, wherein the electrode 60105 is fixed on the base 1, the electrode 60105 is fixed on the upper surface of the fixed end of the electrostatic comb 60104, and the electrode 60105 is simultaneously fixed on the reference excitation beam 2.
At this time, the first excitation unit 601 and the second excitation unit 602 also serve as the reference excitation unit 7, respectively, and can simultaneously realize the functions of both.

Claims (9)

1. The high-resolution sensor is characterized by comprising a parameter excitation beam (2), a synchronous beam (3), a coupling unit (4), a sensitive layer (5), an excitation unit, a parameter excitation unit (7), a detection unit and a base (1), wherein two ends of the parameter excitation beam (2) and the synchronous beam (3) are fixed on the base (1), and the parameter excitation beam (2) and the synchronous beam (3) are connected through the coupling unit (4); the two ends of the reference excitation beam (2) are respectively provided with a first excitation unit (601) and a first detection unit (801), a sensitive layer (5) is deposited on the upper surface of the middle part of the reference excitation beam, the reference excitation unit (7) is arranged on the reference excitation beam (2) at the front end of the sensitive layer (5), and the two ends of the synchronous beam (3) are respectively provided with a second excitation unit (602) and a second detection unit (802).
2. The high-resolution sensor for collaborative regulation and control of parameter excitation and synchronous resonance according to claim 1, wherein the base (1) comprises a left base block and a right base block, and two ends of the excitation beam (2) and the synchronous beam (3) are respectively fixed on the left base block and the right base block.
3. The high-resolution sensor with the collaborative regulation and control of parameter excitation and synchronous resonance according to claim 1, wherein the coupling unit (4) is a mechanical coupling structure, a capacitive coupling structure, a magnetic coupling structure or an optical coupling structure, the mechanical coupling structure is a cantilever beam, the root part, namely the rear end part, of the mechanical coupling structure is fixed on the base (1), the left side and the right side of the mechanical coupling structure are respectively connected to the inner side surfaces of the excitation beam (2) and the synchronous beam (3), and rectangular through holes are uniformly distributed on the coupling unit (4).
4. The high-resolution sensor with cooperative regulation and control of parameter excitation and synchronous resonance according to claim 1, wherein the first excitation unit (601), the second excitation unit (602) and the reference excitation unit (7) are driving structures of piezoelectric ceramics, parallel plate capacitors, comb capacitors or thermal resistance principles; the excitation unit (7) comprises a first piezoelectric layer (701), a first upper electrode (702) and a first lower electrode (703) when in a piezoelectric ceramic driving structure, wherein the first upper electrode (702) is fixed on the first piezoelectric layer (701), and the first piezoelectric layer (701) is fixed on the first lower electrode (703).
5. A high resolution sensor with co-modulation of parametric excitation and synchronous resonance according to claim 1, characterized in that the first detection unit (801) and the second detection unit (802) are capable of converting vibrations into voltage signals; and the first detection unit (801) and the second detection unit (802) have the same structure and comprise a second piezoelectric layer (80101), a second upper electrode (80102) and a second lower electrode (80103), wherein the second upper electrode (80102) is fixed on the second piezoelectric layer (80101), and the second piezoelectric layer (80101) is fixed on the second lower electrode (80103).
6. A high resolution sensor with co-modulation of parameter excitation and synchronous resonance according to claim 1, characterized in that the sensitive layer (5) is a specific adsorption film, molecular sieve or magnetically sensitive layer.
7. The high-resolution sensor with the cooperative regulation and control of parameter excitation and synchronous resonance according to claim 1, wherein the excitation beam (2) and the synchronous beam (3) are double-ended clamped beams, the shape, the size and the natural frequency of the excitation beam are the same, and the excitation beam (2), the synchronous beam (3), the coupling unit (4) and the base (1) are integrated; the synchronous beam (3) is a cantilever beam, a resonant ring or a resonant cavity.
8. A high-resolution sensing method for performing cooperative regulation of parameter excitation and synchronous resonance by using the high-resolution sensor for cooperative regulation of parameter excitation and synchronous resonance according to any one of claims 1 to 7, which is characterized by comprising the following steps:
Step one, applying alternating voltage to a first excitation unit (601) on a reference excitation beam (2) through an alternating current power supply of a reference excitation circuit, gradually increasing the output frequency of the alternating current power supply, and sweeping and exciting a reference excitation unit (7) on the reference excitation beam (2) at the natural frequency of the reference excitation beam (2);
Step two, an alternating voltage is applied to a second excitation unit (602) through a direct driving branch circuit of a self-excited oscillation circuit which is connected with a selection switch, so that the second excitation unit (602) on the synchronous beam (3) is excited, after the output voltage amplitude of a second detection unit (802) on the synchronous beam (3) is stable, the selection switch is adjusted to a negative feedback driving branch circuit of the self-excited oscillation circuit, and the synchronous beam (3) is excited in a closed loop through the negative feedback driving branch circuit of the self-excited oscillation circuit;
detecting a voltage signal of a second detection unit (802) on the synchronous beam (3), and calibrating the initial resonant frequency of the synchronous beam (3) through Fourier transformation;
Step four, placing the sensor in an environment of a substance or force to be detected;
step five, applying fixed-frequency alternating voltage to a first excitation unit (601) through an alternating current power supply of a reference excitation circuit, and exciting a reference excitation beam (2) at a fixed frequency at the natural frequency of the reference excitation beam (2);
Step six, applying a fixed-frequency alternating voltage to the reference excitation unit (7) through the reference excitation circuit, and exciting the reference excitation unit (7) at a fixed frequency, wherein the exciting frequency is twice that of the first exciting unit (601), so that the signal output of the second detecting unit (802) on the synchronous beam (3) is further increased;
Step seven, a direct driving branch of the self-excited oscillation circuit is connected through a selection switch, alternating voltage is applied to a second excitation unit (602), so that the second excitation unit (602) on the synchronous beam (3) is excited, after the amplitude of the output voltage of a second detection unit (802) is stable, the selection switch is adjusted to be connected with a negative feedback driving branch of the self-excited oscillation circuit, and the synchronous beam (3) is excited in a closed loop through the negative feedback driving branch of the self-excited oscillation circuit;
Step eight, the natural frequency of the reference excitation beam (2) is adjusted in proportion by adjusting the output voltage of a direct current power supply of a direct current bias circuit in the reference excitation circuit, so that single frequency multiplication reference excitation synchronous resonance occurs between the reference excitation beam (2) and the synchronous beam (3);
step nine, when the output voltage value of the first detection unit (801) drops or increases suddenly, the amplitude jump of the reference beam (2) is indicated, and the early warning of trace substances to be detected or weak force to be measured is realized; otherwise, repeating the fifth step to the eighth step;
Step ten, exciting a parametric excitation unit (7) on the parametric excitation beam (2) by gradually increasing the output frequency of an alternating current power supply in the parametric excitation circuit and sweeping the natural frequency of the parametric excitation beam (2), and canceling the alternating current voltage applied to a first excitation unit (601) of the parametric excitation beam (2);
step eleven, detecting a voltage signal of a second detection unit (802) on the synchronous beam (3), obtaining the resonance frequency of the synchronous beam (3), namely the sensing resonance frequency, through Fourier transformation, and realizing high-resolution sensing of the mass m g of the trace to-be-detected substance or the weak to-be-detected force F g, wherein
F is the initial resonant frequency calibrated by the synchronous beam (3), f' is the sensing resonant frequency of the synchronous beam (3), and k is the linear stiffness of the synchronous beam (3).
9. The high-resolution sensing method for collaborative regulation and control of parameter excitation and synchronous resonance according to claim 8, wherein the parameter excitation circuits in the first, fifth and sixth steps are open-loop circuits formed by sequentially connecting an alternating current power supply, a capacitor, an amplifier, a frequency multiplier and a direct current bias circuit; the direct current bias circuit is formed by connecting an inductor and a direct current power supply; the frequency multiplier is connected with an inductor in the direct current bias circuit, and the output voltage of the capacitor acts on the first excitation unit (601); the output voltage of the frequency multiplier acts on the reference excitation unit (7) as final voltage;
the self-oscillation circuit consists of a direct drive branch, a negative feedback drive branch and a direct current bias circuit; wherein, the direct drive branch is an open loop circuit formed by sequentially connecting an alternating current power supply, a selection switch and a capacitor, and the second excitation unit (602) is connected with the capacitor; the initial excitation frequency of the AC power supply output is set as the natural frequency of the synchronous beam (3);
the negative feedback driving branch is a closed loop formed by sequentially connecting an amplifier, a band-pass filter, a limiter, a phase shifter, a selection switch and a capacitor end to end; the second excitation unit (602) is connected with the capacitor, the second detection unit (802) is connected with the amplifier, and the output voltage of the second detection unit (802) acts on the second excitation unit (602) as final voltage output after passing through the amplifier, the band-pass filter, the limiter, the phase shifter, the selection switch and the capacitor.
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