CN103184886B - A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof - Google Patents
A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof Download PDFInfo
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- CN103184886B CN103184886B CN201110452721.2A CN201110452721A CN103184886B CN 103184886 B CN103184886 B CN 103184886B CN 201110452721 A CN201110452721 A CN 201110452721A CN 103184886 B CN103184886 B CN 103184886B
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- 238000005516 engineering process Methods 0.000 title claims abstract description 27
- 238000005259 measurement Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000007789 gas Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 56
- 239000000377 silicon dioxide Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000002485 combustion reaction Methods 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- JQPTYAILLJKUCY-UHFFFAOYSA-N Palladium(II) oxide Chemical compound [O-2].[Pd+2] JQPTYAILLJKUCY-UHFFFAOYSA-N 0.000 claims description 4
- 230000000875 corresponding Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000004088 simulation Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- 230000003197 catalytic Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000003345 natural gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 2
- 210000004027 cells Anatomy 0.000 description 2
- 239000003245 coal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 241000272168 Laridae Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001488 breeding Effects 0.000 description 1
- 238000009298 carbon filtering Methods 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000000607 poisoning Effects 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
The invention provides measurement parts of a kind of gas alarm based on MEMS technology and preparation method thereof, utilize the advantage of MEMS, detection part is fabricated to MEMS chip, it is equipped with certain process circuit and just can detect the gas density in air, compared with tradition gas alarm, using MEMS approach to make catalytic combustion-type gas alarm, it is little that piece volumes measured by MEMS alarm, response time is short, and accuracy is high.
Description
Technical field
The invention belongs to MEMS system design and application, measurement parts of a kind of methane gas alarm based on MEMS technology and preparation method thereof.
Background technology
MEMS (Micro-Electro-Mechanical
Systems) it is the abbreviation of MEMS.MEMS is the call of the U.S., is referred to as micromechanics in Japan, is referred to as micro-system in Europe.MEMS process technology is widely used in the fields such as physics, chemistry, biology at present.The development of MEMS technology opens a brand-new technical field and industry, uses microsensor that MEMS technology makes, microactrator, micro parts, Micromechanical Optics device, vacuum microelectronic device, power electronic devices etc. to suffer from the most wide application prospect in Aeronautics and Astronautics, automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people are touched.MEMS technology is just developing into a huge industry, and just as over nearly 20 years, microelectronic industry is the same with the great variety that computer industry is brought to the mankind, MEMS is the most breeding the technological change that a field depth is carved the impact that human society produces a new round.The leading products in MEMS market are that pressure transducer, accelerometer, gyroscope, ink nozzle and hard drive are first-class at present.Most industry observer predicts, the sales volume of the five-year MEMS will be in the gesture increased rapidly, annual increment rate is about 18%, and therefore the development to Mechatronic Engineering, precision optical machinery and the subject such as instrument, Semiconductor Physics provides fabulous opportunity and stern challenge.
MEMS is a kind of brand-new research and development field that must simultaneously consider multiple physical field immixture, relative to traditional machinery, and they smaller, maximum less than one centimetre, it is only several microns, its thickness is the most small.Using the material based on silicon, excellent electrical properties, the intensity of silicon materials, hardness and Young's modulus are suitable with ferrum, and density is similar with aluminum, and pyroconductivity is close to molybdenum and tungsten.Use the generation technique similar with integrated circuit (IC), the mature technology during IC can be utilized in a large number to produce, technique, carry out high-volume, low-cost production, make cost performance increase substantially relative to tradition " mechanical " manufacturing technology.MEMS system includes small mechanically and electrically power parts.Micro-induction apparatus of MEMS structure can be used to sensing or measures pressure, flow velocity, acceleration, temperature, pressure and other physical quantitys.One micro-induction apparatus can be environment parameter, and such as flow velocity, pressure, temperature inversion become the signal of telecommunication.We lay down a criterion to the signal of telecommunication of such induction apparatus, and the environment parameter at such induction apparatus place just can measure.
Methane (CH4), it is commonly called as gas, is the main component of natural gas, it is frequently necessary to use natural gas in family life, commercial production.But, using natural gas most important is exactly safety problem, and whether detection natural gas accurate, rapid leaks and become the most important thing, and this is accomplished by using gas alarm；In coal production, also can produce methane gas with production, it is necessary to have gas alarm to avoid the generation of security incident.
Current gas-warning instrument is broadly divided into combustion-type and infrared spectrum formula two kinds by principle, and spectrographic method detection gas accuracy is high, but instrument and equipment volume is relatively big, relatively costly, and in actual application, confined condition is more.The detection most effective most economical method of gas is catalytic combustion method, and the cardinal principle of this method is that catalyst Palladium monoxide (black) is coated in measuring cell surface, then is equipped with reference elements composition measuring bridge (black-and-white component) that physical property is identical.Two element platinum filaments are heated to 400 degree Celsius, and when in air containing fuel gas, measuring cell, under the effect of catalyst, in element surface generation catalytic reaction, makes temperature rise, and just can be judged the content of gas by the temperature difference measuring two elements.Owing to catalysis element has many superior functions such as circuit is simple, reliable, cheap in terms of detection imflammable gas, in the whole nation, safety of coal mines detection field is widely applied.Catalytic combustion-type gas detection equipment is to use gas detection equipment the most extensive, most common in current colliery.But the gas alarm that traditional method makes, after using a period of time, can produce bigger error due to catalyst poisoning, accumulation of pollutants.The more important thing is, traditional alarm response time is longer, is difficult to accomplish to contact fast reaction after gas.
Summary of the invention
For the deficiencies in the prior art, it is an object of the invention to provide the measurement parts of a kind of gas alarm based on MEMS technology, utilize the advantage of MEMS, detection part is fabricated to MEMS chip, is equipped with certain process circuit and just can detect the gas density in air, compared with tradition gas alarm, MEMS approach is used to make catalytic combustion-type gas alarm, MEMS alarm measurement piece volumes is little, and response time is short, and accuracy is high.
The technical scheme is that the measurement parts of a kind of gas alarm based on MEMS technology, it is characterized in that they two block length cubes including being stacked upon are silica-based, one of them is silica-based has gas passage in the side with another silica-based contact surface, described gas passage is the breach of rectangular shape, and the porch of described breach is provided with one layer of activated carbon filtering other gases；The silica-based centre position on breach surface having gas passage is provided with critesistor, and another cuboid is silica-based has combustion elements in its surface configuration corresponding with breach；The upper surface of described measurement parts is provided with one layer of heat insulation layer connecting external circuit.
It is 0～4%(volume ratio that the described gas density measuring parts measures scope).
The manufacture method measuring parts of a kind of gas alarm based on MEMS technology, it is characterised in that it comprises the following steps:
(1) go out the figure of gas passage and measuring unit by MEMS design of Simulation, and make the nickel metal mask plate that glass is substrate；
(2) with litho machine, the figure of gas passage is transferred to spin coating and have the cuboid silicon chip of photoresist；Glue thickness is 0.5～1.5 micron, and the silicon chip being coated with photoresist is placed on front baking 10 minutes in vacuum drying oven, and temperature is 90 DEG C；Carrying out photoetching with extreme ultraviolet linear light again, arranging time of exposure according to the difference that glue is thick is 4～12s, and then, in the NaOH solution that concentration is 0.6%, development 20～60s, carries out after bake 15 minutes by the silicon chip developed, and temperature is 120 DEG C；Will dried silicon chip after development, be placed in reactive ion etching machine, oxygen flow is 50sccm, air pressure be 40mbar, forword power be 50w, bombard 2 minutes, cull bottom removal figure, the degree of depth is 10～20 microns；
(3) copy the step of (2), having the centre position photoetching on silica-based breach surface of gas passage and etching the figure of critesistor, the degree of depth 4 microns；
(4) use acetone ultrasonic cleaning 5～10 minutes, wash away photoresist and other impurity；
(5) use LPCVD technology, make critesistor at the part sedimentary phosphor of critesistor and the compound of boron；
(6) plating combustion elements by microplating technology on another cuboid is silica-based, combustion elements includes platino and catalyst Palladium monoxide；
(7) between each several part, plating makes wire and is connected in external circuit, makes chip package.
The operation principle of the present invention: be connected to catalyst and the platino without catalyst at Wheatstone bridge two ends, when air has gas, gas can burn on the platinum have catalyst, so that temperature rises, corresponding critesistor change in resistance, electric bridge two ends produce voltage difference, measure this voltage difference and process can be obtained by the concentration of gas in air.
The superiority of the present invention is:
(1) response time is fast, and owing to MEMS element volume is little, when concentration is gradually increased, component temperature increases very fast, so that it is short to reach alert if required time；
(2) highly sensitive, small size avoids the interference much brought by Circuits System, can determine gas density accurately；
(3) gas passage is made the inside into structure by the present invention, avoid traditional measurement apparatus and expose aerial structure, this structure measurement element is little with air contact, the impact of impurity in air can be reduced, and the problem that use element sensitivity declines for a long time, thus add service life.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is further described.
Fig. 1 is to shift, through photoetching, figure, the silica-based schematic diagram of the cuboid having gas passage obtained.
Fig. 2 be through deposition obtain have gas passage and make by lithography critesistor the silica-based schematic perspective view of cuboid.
Fig. 3 is the silica-based schematic diagram of the cuboid after plating combustion elements.
Fig. 4 be two cuboids silica-based stack formed gas passages schematic diagram.
Fig. 5 be the gas alarm that the present invention relates to measure the structural representation after parts finally encapsulate
Wherein: 1 for have the silica-based of gas passage, 2 is critesistor, and 3 is combustion elements, and 4 is that cuboid is silica-based, and 5 is gas passage, and 6 is activated carbon, and 7 is heat insulation layer, and 8 is wire.
Detailed description of the invention
Embodiment:
A kind of measurement parts of gas alarm based on MEMS technology, it is characterized in that they two block length cubes including being stacked upon are silica-based, one of them is silica-based has gas passage 5 in the side with another silica-based contact surface, described gas passage 5 is the breach of rectangular shape, and the porch of described breach is provided with one layer of activated carbon 6 filtering other gases；Have gas passage 5 silica-based 1 is provided with critesistor 2 in the centre position on breach surface, and another cuboid silica-based 4 has combustion elements 3 in its surface configuration corresponding with breach；The upper surface of described measurement parts is provided with one layer of heat insulation layer 7 connecting external circuit.
The manufacture method measuring parts of a kind of gas alarm based on MEMS technology, it is characterised in that it comprises the following steps:
(1) go out the figure of channel slot and measuring unit by MEMS design of Simulation, and make the nickel metal mask plate that glass is substrate；
(2) as it is shown in figure 1, the figure of passage is transferred to spin coating with litho machine and have on the silicon chip of photoresist；Glue thickness is 1.0 microns, and the silicon chip being coated with photoresist is placed on front baking 10 minutes in vacuum drying oven, and temperature is 90 DEG C.Extreme ultraviolet linear light carries out photoetching, and time of exposure is not all 8s according to glue thickness, and then, develop in the NaOH solution that concentration is 0.6% 40s, and the silicon chip developed is carried out after bake 15 minutes, and temperature is 120 DEG C.Will dried silicon chip after development, be placed in reactive ion etching machine, oxygen flow is 50sccm, air pressure be 40mbar, forword power be 50w, bombard 2 minutes, cull bottom removal figure, the degree of depth is 15 microns；
(3) as in figure 2 it is shown, having the centre position photoetching on silica-based breach surface of gas passage and etching the figure of critesistor, the degree of depth 4 microns；
(4) use acetone ultrasonic cleaning 7.5 minutes, wash away photoresist and other impurity；
(5) use LPCVD technology, make critesistor 2 at the part sedimentary phosphor of critesistor and the compound of boron；
(6) as it is shown on figure 3, plate combustion elements 3 by microplating technology on another cuboid is silica-based, combustion elements includes platino and catalyst Palladium monoxide；
(7) as shown in Figure 4, Figure 5, between each several part, plating makes wire 8 and is connected in external circuit, makes chip package.
Through the measurement parts of the available gas alarm of above-mentioned steps, it is 0～4%(volume ratio that the described gas density measuring parts measures scope), alarm parameters can be set in the range of this.
Claims (3)
1. measurement parts for gas alarm based on MEMS technology, described MEMS is MEMS, and its feature exists
Including that the two block length cubes being stacked upon are silica-based in it, one of them is silica-based has gas in the side with another silica-based contact surface
Body passage, described gas passage is the breach of rectangular shape, and the porch of described breach is provided with one layer and filters other gases
Activated carbon；The silica-based centre position on breach surface having gas passage is provided with critesistor, and another cuboid is silica-based at it
The surface configuration corresponding with breach has combustion elements；The making side measuring parts of gas alarm based on MEMS technology
Method is: (1) goes out the figure of gas passage and measuring unit by MEMS design of Simulation, and makes the nickel that glass is substrate
Metal mask plate；(2) with litho machine, the figure of gas passage being transferred to spin coating has the cuboid of photoresist silica-based；Glue thickness is
0.5～1.5 micron, the silicon chip being coated with photoresist being placed on front baking 10 minutes in vacuum drying oven, temperature is 90 DEG C；Again
Carrying out photoetching with extreme ultraviolet linear light, arranging time of exposure according to the difference that glue is thick is 4～12s, then, is 0.6% in concentration
In NaOH solution, development 20～60s, carries out after bake 15 minutes by the silicon chip developed, and temperature is 120 DEG C；To do after development
The silicon chip of dry mistake, is placed in reactive ion etching machine, and oxygen flow is 50sccm, and air pressure is 40mbar, forword power
For 50w, bombarding 2 minutes, remove cull bottom figure, the degree of depth is 10～20 microns；(3) step of (2) is copied,
Have the centre position photoetching on the silica-based breach surface of gas passage and etch the figure of critesistor, the degree of depth 4 microns；
(4) use acetone ultrasonic cleaning 5～10 minutes, wash away photoresist and other impurity；(5) use LPCVD technology i.e.
Low-pressure chemical vapor deposition technology, makes critesistor at the part sedimentary phosphor of critesistor and the compound of boron；(6) micro-electricity is used
Coating technology plates combustion elements on another cuboid is silica-based, and combustion elements includes platino and catalyst Palladium monoxide；(7) respectively
Between part, plating makes wire and is connected in external circuit, makes chip package.
The measurement parts of a kind of gas alarm based on MEMS technology the most according to claim 1, it is characterised in that described
The upper surface measuring parts is provided with one layer of heat insulation layer connecting external circuit.
The measurement parts of a kind of gas alarm based on MEMS technology the most according to claim 1, it is characterised in that described
The gas density measuring parts to measure scope be 0～4% (volume ratio).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110452721.2A CN103184886B (en) | 2011-12-30 | A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110452721.2A CN103184886B (en) | 2011-12-30 | A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103184886A CN103184886A (en) | 2013-07-03 |
| CN103184886B true CN103184886B (en) | 2016-12-14 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2094085U (en) * | 1991-06-05 | 1992-01-22 | 李栋鑫 | Microminiature fire alarm |
| CN1388305A (en) * | 2001-05-24 | 2003-01-01 | 潘奕 | Personal mine gas alarm |
| CN101949838A (en) * | 2010-09-02 | 2011-01-19 | 西安交通大学 | Dispersive infrared absorption gas detection device and method |
| CN102135514A (en) * | 2011-03-30 | 2011-07-27 | 中国矿业大学 | Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection |
| CN102175287A (en) * | 2010-12-30 | 2011-09-07 | 国家纳米技术与工程研究院 | Measurement component of flow meter chip based on MEMS (micro electronic mechanical system) technology and manufacturing method thereof |
| CN102221568A (en) * | 2011-03-30 | 2011-10-19 | 中国矿业大学 | Room temperature gas sensor with double-clamped beam |
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2094085U (en) * | 1991-06-05 | 1992-01-22 | 李栋鑫 | Microminiature fire alarm |
| CN1388305A (en) * | 2001-05-24 | 2003-01-01 | 潘奕 | Personal mine gas alarm |
| CN101949838A (en) * | 2010-09-02 | 2011-01-19 | 西安交通大学 | Dispersive infrared absorption gas detection device and method |
| CN102175287A (en) * | 2010-12-30 | 2011-09-07 | 国家纳米技术与工程研究院 | Measurement component of flow meter chip based on MEMS (micro electronic mechanical system) technology and manufacturing method thereof |
| CN102135514A (en) * | 2011-03-30 | 2011-07-27 | 中国矿业大学 | Gas sensor for cantilever beam type piezoelectric actuation and piezoelectric detection |
| CN102221568A (en) * | 2011-03-30 | 2011-10-19 | 中国矿业大学 | Room temperature gas sensor with double-clamped beam |
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Non-Patent Citations (1)
| Title |
|---|
| 煤矿井下环境对甲烷催化元件性能影响的探讨;曹利波;《中国优秀硕士学位论文数据库-信息科技辑》;20100115;第3页 * |
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Granted publication date: 20161214 Termination date: 20211230 |