CN102221568A - Room temperature gas sensor with double-clamped beam - Google Patents
Room temperature gas sensor with double-clamped beam Download PDFInfo
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- CN102221568A CN102221568A CN 201110077880 CN201110077880A CN102221568A CN 102221568 A CN102221568 A CN 102221568A CN 201110077880 CN201110077880 CN 201110077880 CN 201110077880 A CN201110077880 A CN 201110077880A CN 102221568 A CN102221568 A CN 102221568A
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- dielectric layer
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- clamped beam
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 28
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000007084 catalytic combustion reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The invention discloses a room temperature gas sensor with a double-clamped beam. The double-clamped beam is arranged on a silicon substrate, and takes a dielectric layer as a structural layer. Lower electrodes are symmetrically arranged on the dielectric layer on the root parts of the two sides of the double-clamped beam. Piezoelectric layers are arranged on the lower electrodes. An isolating dielectric layer is arranged, and covers the dielectric layer, the piezoelectric layers and the lower electrodes. Upper electrodes are arranged on the isolating dielectric layer positioned on the dielectric layer. The lower electrodes, the piezoelectric layer, the isolating dielectric layer and the upper electrodes on a left side and a right side form a left piezoelectric unit and a right piezoelectric unit respectively. A supramolecular compound film is arranged on the isolating dielectric layer between the left and right piezoelectric units as a gas-sensitive layer. Upper and lower exposed electrode leads are arranged on the dielectric layer on the silicon substrate outside the double-clamped beam, and are connected with the upper and lower electrodes respectively. The detection of gas concentration is realized by piezoelectrically driving the resonance of the double-clamped beam and adopting a piezoelectric vibration pickup way. The sensor has the advantages of stable performance, long service life, low power consumption, small volume, high resolution and the like, and outputs quasi-digital frequency signals.
Description
Technical field
The present invention relates to a kind of sensor, especially a kind of two-end fixed beam room temperature firedamp sensor that is used for ground environment and colliery downhole detection gas (methane) concentration.
Background technology
The sensor that detects gas density adopts catalytic combustion type inflammable gas firedamp sensor, also useful optical gas firedamp sensor mostly at present.Though these two kinds of sensors can both play the effect of perception information, but there is the problem of working temperature height, life-span and calibration cycle weak point, poor stability in catalytic combustion type inflammable gas firedamp sensor, under high concentration is impacted, easily poison, can not initiatively distinguish different inflammable gass.And the cost of optical gas sensor is higher, and power consumption is bigger.
Summary of the invention
Technical matters: the objective of the invention is to overcome the weak point in the prior art, provide a kind of simple in structure, stability is strong, long service life, safe and reliable, two-end fixed beam room temperature firedamp sensor that cost is low.
Technical scheme: two-end fixed beam room temperature firedamp sensor of the present invention, this sensor is substrate with the silicon substrate that is symmetrical set, silicon substrate is provided with dielectric layer, the medianly zygomorphic bottom electrode that is provided with of the center line on dielectric layer top, be respectively equipped with piezoelectric layer on the bottom electrode of symmetria bilateralis setting, be coated with the spacer medium layer on dielectric layer, piezoelectric layer and the bottom electrode, be respectively equipped with top electrode on the spacer medium layer of the piezoelectric layer of the left and right sides; Bottom electrode, piezoelectric layer, spacer medium layer and top electrode that the left and right sides is provided with are formed left piezoelectric unit and right piezoelectric unit respectively, be provided with the gas sensitive layer that is positioned on the spacer medium layer, forms the two-end fixed beam structure between left side piezoelectric unit and the right piezoelectric unit, be respectively equipped with bottom electrode lead-in wire that links to each other with bottom electrode and the top electrode lead-in wire that links to each other with top electrode on the silicon substrate that is symmetrical set.
Described gas sensitive layer is cave kind-A or cave kind-E super molecular compound; Described dielectric layer is monox or silicon nitride or monox and silicon nitride composite bed; The spacer medium layer is a silicon oxide layer.
Beneficial effect: adopt the super molecular compound that methane is had recognition function as sensitive layer, the variation of methane concentration makes sensitive layer absorption and desorption methane molecule cause the two-end fixed beam resonance frequency to change.Can realize the detection of high selectivity at methane when the room temperature, when gas (methane) concentration change, the resonance frequency variation that the methane of absorption of gas sensitive layer or desorption changes and causes two-end fixed beam, the resonance frequency that detects the two-end fixed beam structure with a piezoelectric unit changes, and realizes the detection and the frequency type output of gas (methane) concentration signal; The driving of two-end fixed beam structure adopts another piezoelectric unit to realize that two piezoelectric units are respectively equipped with the contact conductor of upper/lower electrode.Have the advantages that to avoid poisoning, can not being subjected to the impact of gas high concentration, its stable performance, long service life, low in energy consumption, the resolution height, and export the digital frequency signal that is as the criterion, volume is little, cost is low, job operation can with the CMOS process compatible, logical satisfy the requirement of setting up sensing net, Internet of Things.
Description of drawings
Fig. 1 is a main TV structure synoptic diagram of the present invention.
Fig. 2 is a plan structure synoptic diagram of the present invention.
Among the figure: silicon substrate-101, piezoelectric layer-104, gas sensitive layer-105, two-end fixed beam structure-107, dielectric layer-1021, spacer medium layer-1022, top electrode-1032; Bottom electrode-1031, left piezoelectric unit-1061, right piezoelectric unit-1062, bottom electrode lead-in wire-10311, top electrode lead-in wire-10322.
Embodiment
Below in conjunction with accompanying drawing one embodiment of the present of invention are further described:
Two-end fixed beam gas temperature sensor of the present invention mainly is made up of with gas sensitive layer 105 silicon substrate 101, dielectric layer 1021, spacer medium layer 1022, piezoelectric layer 104, bottom electrode metal 1031, top electrode metal 1032.Dielectric layer 1021 is monox, silicon nitride or monox/silicon nitride composite bed; Spacer medium layer 1022 is a silicon oxide layer.It is the two-end fixed beam 107 of structural sheet that this sensor is provided with on silicon substrate 101 with dielectric layer 1021, be arranged with bottom electrode 1031 on the dielectric layer 1021 of two-end fixed beam both sides root, bottom electrode 1031 is provided with piezoelectric layer 104, be provided with spacer medium layer 1022 blanket dielectric layer 1021, piezoelectric layer 104 and bottom electrode 1031, on the spacer medium layer 1022 that is positioned on the piezoelectric layer 104, be respectively equipped with top electrode 1032; The bottom electrode 1031 of the left and right sides, piezoelectric layer 104, spacer medium layer 1022 and top electrode 1032 are formed left piezoelectric unit 1061 and right piezoelectric unit 1062 respectively, spacer medium layer 1022 between left side piezoelectric unit 1061 and the right piezoelectric unit 1062 is provided with gas sensitive layer 105, is provided with the bottom electrode that links to each other with bottom electrode 1031 respectively lead-in wire 10311 that exposes and the top electrode lead-in wire 10322 that links to each other with top electrode 1032 on the dielectric layer on the silicon substrate outside the two-end fixed beam 107 101 1021.Gas sensitive layer 105 is cave kind-A(cryptophane-A) or cave kind-E (cryptophane-E) super molecular compound.Specific as follows: generate dielectric layer 1021 on silicon substrate 101, the deposit photoetching forms bottom electrode 1031, piezoelectric layer 104, spacer medium layer 1022, top electrode 1032; Adopt MEMS back side wet etching micro-processing technology to remove silicon, manufacture membrane structure, the front dry etching is made into the two-end fixed beam that piezoelectric excitation and piezoelectricity pick up then; Fixedly gas (methane) sensitive layer forms the two-end fixed beam 107 of gas sensitivity; Use a piezoelectric unit to realize the exciting of two-end fixed beam structure 107, pick up the resonance frequency that detects the two-end fixed beam structure with another piezoelectric unit and change, thereby realize the detection of gas (methane) concentration and accurate digital frequency output.
Claims (3)
1. two-end fixed beam room temperature firedamp sensor, it is characterized in that: this sensor is substrate with the silicon substrate (101) that is symmetrical set, silicon substrate (101) is provided with dielectric layer (1021), the medianly zygomorphic bottom electrode (1031) that is provided with of the center line on dielectric layer (1021) top, be respectively equipped with piezoelectric layer (104) on the bottom electrode (1031) that symmetria bilateralis is provided with, dielectric layer (1021), be coated with spacer medium layer (1022) on piezoelectric layer (104) and the bottom electrode (1031), be respectively equipped with top electrode (1032) on the spacer medium layer (1022) of the piezoelectric layer of the left and right sides (104); The bottom electrode (1031) that the left and right sides is provided with, piezoelectric layer (104), spacer medium layer (1022) and top electrode (1032) are formed left piezoelectric unit (1061) and right piezoelectric unit (1062) respectively, be provided with between left side piezoelectric unit (1061) and the right piezoelectric unit (1062) and be positioned on the spacer medium layer (1022), the gas sensitive layer (105) of forming two-end fixed beam structure (107) is respectively equipped with bottom electrode lead-in wire (10311) that links to each other with bottom electrode (1031) and the top electrode lead-in wire (10322) that links to each other with top electrode (1032) on the silicon substrate that is symmetrical set (101).
2. two-end fixed beam gas temperature sensor according to claim 1 is characterized in that: described gas sensitive layer (105) is cave kind-A or cave kind-E super molecular compound.
3. two-end fixed beam gas temperature sensor according to claim 1 is characterized in that: described dielectric layer (1021) is monox or silicon nitride or monox and silicon nitride composite bed; Spacer medium layer (1022) is a silicon oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110077880 CN102221568B (en) | 2011-03-30 | 2011-03-30 | Room temperature gas sensor with double-clamped beam |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110077880 CN102221568B (en) | 2011-03-30 | 2011-03-30 | Room temperature gas sensor with double-clamped beam |
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| CN102221568A true CN102221568A (en) | 2011-10-19 |
| CN102221568B CN102221568B (en) | 2013-03-06 |
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| CN 201110077880 Expired - Fee Related CN102221568B (en) | 2011-03-30 | 2011-03-30 | Room temperature gas sensor with double-clamped beam |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103184886A (en) * | 2011-12-30 | 2013-07-03 | 国家纳米技术与工程研究院 | Measuring component of MEMS (Micro-electromechanical Systems) technology-based gas alarm and preparation method of measuring component |
| CN103472097A (en) * | 2013-09-26 | 2013-12-25 | 中国矿业大学 | Micro gas sensor recoverable for repeated preparation and preparation method thereof |
| WO2016066003A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Silicon heater-based mems methane sensor, manufacturing method for same, and applications thereof |
| WO2016066089A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Methane sensor based on single heating component, manufacturing method, and applications |
| CN103184886B (en) * | 2011-12-30 | 2016-12-14 | 国家纳米技术与工程研究院 | A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof |
| CN109239137A (en) * | 2018-09-17 | 2019-01-18 | 中国矿业大学 | A kind of miniature methane transducer and CH_4 detection method |
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| WO2001061336A1 (en) * | 2000-02-16 | 2001-08-23 | Siemens Aktiengesellschaft | Product comprising a piezoelectric substrate |
| US20070146859A1 (en) * | 2005-12-26 | 2007-06-28 | Samsung Electro-Mechanics Co., Ltd. | Optical modulator |
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2011
- 2011-03-30 CN CN 201110077880 patent/CN102221568B/en not_active Expired - Fee Related
Patent Citations (6)
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| WO2001061336A1 (en) * | 2000-02-16 | 2001-08-23 | Siemens Aktiengesellschaft | Product comprising a piezoelectric substrate |
| US20070146859A1 (en) * | 2005-12-26 | 2007-06-28 | Samsung Electro-Mechanics Co., Ltd. | Optical modulator |
| CN101153825A (en) * | 2006-09-25 | 2008-04-02 | 中国计量学院 | Structure of silicon micromachine resonant micro-pressure sensor chip and its manufacturing method |
| CN101034077A (en) * | 2006-11-29 | 2007-09-12 | 电子科技大学 | Piezocrystal gas sensor and method for making same |
| KR100849466B1 (en) * | 2007-01-31 | 2008-07-30 | 포항공과대학교 산학협력단 | Micro piezoelectric sensor and the oscillating circuit therefor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103184886A (en) * | 2011-12-30 | 2013-07-03 | 国家纳米技术与工程研究院 | Measuring component of MEMS (Micro-electromechanical Systems) technology-based gas alarm and preparation method of measuring component |
| CN103184886B (en) * | 2011-12-30 | 2016-12-14 | 国家纳米技术与工程研究院 | A kind of measurement parts of gas alarm based on MEMS technology and preparation method thereof |
| CN103472097A (en) * | 2013-09-26 | 2013-12-25 | 中国矿业大学 | Micro gas sensor recoverable for repeated preparation and preparation method thereof |
| WO2016066003A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Silicon heater-based mems methane sensor, manufacturing method for same, and applications thereof |
| WO2016066089A1 (en) * | 2014-10-31 | 2016-05-06 | 中国矿业大学 | Methane sensor based on single heating component, manufacturing method, and applications |
| CN109239137A (en) * | 2018-09-17 | 2019-01-18 | 中国矿业大学 | A kind of miniature methane transducer and CH_4 detection method |
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| Publication number | Publication date |
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| CN102221568B (en) | 2013-03-06 |
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| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Ma Hongyu Inventor after: Ding Enjie Inventor after: Wang Wenjuan Inventor after: Zhao Xiaohu Inventor after: Wang Gang Inventor after: Hu Qingsong Inventor after: Cheng Tingting Inventor before: Ma Hongyu Inventor before: Ding Enjie Inventor before: Zhang Weidong |
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Free format text: CORRECT: INVENTOR; FROM: MA HONGYU DING ENJIE ZHANG WEIDONG TO: MA HONGYU DING ENJIE WANG WENJUAN ZHAO XIAOHU WANG GANG HU QINGSONG CHENG TINGTING |
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Address after: 221116 No. 1 University Road, copper mountain, Jiangsu, Xuzhou Patentee after: China University of Mining & Technology Address before: 221116 science and Technology Department, China University of Mining and Technology, Sanhuan South Road, Xuzhou, Jiangsu Patentee before: China University of Mining & Technology |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20130306 Termination date: 20170330 |