CN102122635A - 沟槽阵列的形成方法 - Google Patents
沟槽阵列的形成方法 Download PDFInfo
- Publication number
- CN102122635A CN102122635A CN2010100225878A CN201010022587A CN102122635A CN 102122635 A CN102122635 A CN 102122635A CN 2010100225878 A CN2010100225878 A CN 2010100225878A CN 201010022587 A CN201010022587 A CN 201010022587A CN 102122635 A CN102122635 A CN 102122635A
- Authority
- CN
- China
- Prior art keywords
- etching
- flow
- hbr
- formation method
- groove array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 127
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000407 epitaxy Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract 5
- 238000000059 patterning Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010100225878A CN102122635B (zh) | 2010-01-08 | 2010-01-08 | 沟槽阵列的形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010100225878A CN102122635B (zh) | 2010-01-08 | 2010-01-08 | 沟槽阵列的形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102122635A true CN102122635A (zh) | 2011-07-13 |
CN102122635B CN102122635B (zh) | 2013-12-04 |
Family
ID=44251153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010100225878A Active CN102122635B (zh) | 2010-01-08 | 2010-01-08 | 沟槽阵列的形成方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102122635B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102437026A (zh) * | 2011-11-29 | 2012-05-02 | 上海宏力半导体制造有限公司 | 沟槽刻蚀方法以及半导体器件制造方法 |
CN104704612A (zh) * | 2012-11-01 | 2015-06-10 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
CN104704612B (zh) * | 2012-11-01 | 2016-11-30 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
CN106289535A (zh) * | 2016-11-04 | 2017-01-04 | 中国计量大学 | 一种对称分布式空腔阵列 |
CN108751124A (zh) * | 2018-05-21 | 2018-11-06 | 赛莱克斯微系统科技(北京)有限公司 | 一种制作带有沟道或空腔的半导体结构的方法 |
CN109767980A (zh) * | 2019-01-22 | 2019-05-17 | 上海华虹宏力半导体制造有限公司 | 超级结及其制造方法、超级结的深沟槽制造方法 |
CN118720941A (zh) * | 2024-07-16 | 2024-10-01 | 南方科技大学 | 一种基于等离子体的槽类阵列零件的调整方法、系统及装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200414344A (en) * | 2002-09-06 | 2004-08-01 | Tokyo Electron Ltd | Method and apparatus for etching Si |
CN1797716A (zh) * | 2004-12-22 | 2006-07-05 | 联华电子股份有限公司 | 减少微尘产生的等离子蚀刻方法 |
-
2010
- 2010-01-08 CN CN2010100225878A patent/CN102122635B/zh active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102437026A (zh) * | 2011-11-29 | 2012-05-02 | 上海宏力半导体制造有限公司 | 沟槽刻蚀方法以及半导体器件制造方法 |
CN104704612A (zh) * | 2012-11-01 | 2015-06-10 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
CN104704612B (zh) * | 2012-11-01 | 2016-11-30 | 东京毅力科创株式会社 | 等离子体处理方法和等离子体处理装置 |
CN106289535A (zh) * | 2016-11-04 | 2017-01-04 | 中国计量大学 | 一种对称分布式空腔阵列 |
CN108751124A (zh) * | 2018-05-21 | 2018-11-06 | 赛莱克斯微系统科技(北京)有限公司 | 一种制作带有沟道或空腔的半导体结构的方法 |
CN109767980A (zh) * | 2019-01-22 | 2019-05-17 | 上海华虹宏力半导体制造有限公司 | 超级结及其制造方法、超级结的深沟槽制造方法 |
CN109767980B (zh) * | 2019-01-22 | 2021-07-30 | 上海华虹宏力半导体制造有限公司 | 超级结及其制造方法、超级结的深沟槽制造方法 |
CN118720941A (zh) * | 2024-07-16 | 2024-10-01 | 南方科技大学 | 一种基于等离子体的槽类阵列零件的调整方法、系统及装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102122635B (zh) | 2013-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102412179B (zh) | 双浅沟道隔离的外延二极管阵列的制备方法 | |
TWI381487B (zh) | 相變化記憶體元件及其製造方法 | |
CN102122635B (zh) | 沟槽阵列的形成方法 | |
CN106158971B (zh) | 使鳍具有不同鳍高度并且没有构形的方法和结构 | |
US20090166602A1 (en) | Phase-change memory device capable of improving contact resistance and reset current and method of manufacturing the same | |
US9935267B2 (en) | Variable resistance memory device with variable resistance material layer | |
CN102214567B (zh) | 沟槽的形成方法 | |
KR101019984B1 (ko) | 상변화 메모리 소자 및 그 제조 방법 | |
CN101673755B (zh) | 使用复合结构二极管的相变存储器单元及制备方法 | |
CN103681282B (zh) | 晶体管的形成方法 | |
US11943918B2 (en) | Memory structure and fabrication method thereof | |
CN108074798B (zh) | 一种自对准曝光半导体结构的制作方法 | |
CN102376627B (zh) | 接触孔的形成方法 | |
CN101997041B (zh) | 一种利用衬底进行加工的基板单元、基板结构及其制造方法 | |
CN110350030B (zh) | 三维锗及锗硅垂直沟道晶体管的制备方法 | |
CN101866856A (zh) | Npn晶体管及其制作方法 | |
CN108417489B (zh) | Sram存储器及其形成方法 | |
CN103500757B (zh) | 具有肖特基源ldmos的半导体器件及制造方法 | |
WO2014108065A1 (zh) | 一种平面沟道的半导体器件及其制造方法 | |
KR101124340B1 (ko) | 상변화 메모리 소자 및 그 제조 방법 | |
US20240096691A1 (en) | Semiconductor structure and method for manufacturing the same | |
CN102148146B (zh) | 栅极结构形成方法 | |
CN102386058B (zh) | 形成单晶硅层的方法 | |
CN106816441A (zh) | 半导体结构的形成方法 | |
TWI261315B (en) | Method of fabricating memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121102 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121102 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |